Addendum for PCN 2004-018-A

BTS 5440 G

Addendum for PCN-Datasheet 2004-018-A: BTS 5440 G

This Addendum and PCN-Datasheet refers to the PCN 2004-018-A:
“Minor datasheet adaption for BTS 5240 L, BTS 5240 G, BTS 5440 G “.
The PCN-datasheet attached will be valid starting from August 2004.

There are the following changes in the datasheet (on page 7):

Old:
Symbol min typ max Unit
Current limit adjustment threshold voltage VCLA(T-) 2.6 - - V
- - 3.6

New:
Symbol min typ max Unit
Current limit adjustment threshold voltage VCLA(T-) 2.0 - - V
- - 4.0
 PCN 2004-018-A: BTS 5440G

Smart High-Side Power Switch

Four Channels: 4 x 25mΩ
IntelliSense
Product Summary Package
Operating voltage V bb(on) 4,5...28 V
( Loaddump: 40 V )
Active channels one four parallel
On-state resistance RON 25 6.5 mΩ
Nominal load current IL(nom) 6.2 13.9 A
Current limitation Low IL(SCr) 10 A
P-DSO-28-19
High 40

General Description
• N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
diagnostic feedback, monolithically integrated in Smart SIPMOS technology.
• Providing embedded protective functions.
• Extern adjustable current limitation.

Application
• All types of resistive, inductive and capacitive loads
• µC compatible high-side power switch with diagnostic feedback for 12 V grounded loads
• Due to the adjustable current limitation best suitable for loads with high inrush currents, so as lamps
• Replaces electromechanical relays, fuses and discrete circuits

Basic Functions
• Very low standby current Block Diagram
• CMOS compatible input Vbb
• Improved electromagnetic compatibility (EMC)
• Stable behaviour at low battery voltage IN1
Logic
IS1 Channel 1
Protection Functions IS2 Channel 2 Load 1
IN2
• Reverse battery protection with external resistor CLA 1/2
Load 2
• Short circuit protection
• Overload protection IN3 Logic
IS3 Channel 3
• Current limitation IS4 Channel 4 Load 3

• Thermal Shutdown IN4

CLA 3/4
• Overvoltage protection with external resistor GND Load 4
• Loss of GND and loss of Vbb protection
• Electrostatic discharge Protection (ESD)

Diagnostic Functions: IntelliSense

• Proportional load current sense ( with defined fault signal during thermal shutdown and overload )
• Additional open load detection in OFF - state
• Suppressed thermal toggling of fault signal

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 PCN 2004-018-A: BTS 5440G

Functional diagram

overvoltage
gate current limit VBB
protection
control
internal +
voltage charge
clamp for
supply logic pump
inductive load
OUT1
temperature
sensor
IN1 ESD
LOAD
openload
IS1 dedection
Current
sense

CLA 1/2

IN2 control and protection circuit

of
IS2 channel 2
GND1/2 OUT2

IN3 control and protection circuit

of
IS3 channel 3
OUT3
CLA 3/4

IN4 control and protection circuit

of
IS4 channel 4
GND3/4 OUT4

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 PCN 2004-018-A: BTS 5440G

Pin definition and function

Pin Symbol Function

1,14, Vbb Positive power supply voltage. Design the wiring for the
15,28 simultaneous max. short circuit currents from channel 1 to 4
and also for low thermal resistance
3 IN1 Input 1,2,3,4 activates channel 1,2,3,4 in case of logic high signal
6 IN2
9 IN3
12 IN4
25,26,27 OUT1 Output 1,2,3,4 protected high-side power output of channel 1,2,3,4.
22,23,24 OUT2 Design the wiring for the max. short circuit current
19,20,21 OUT3
16,17,18 OUT4
4 IS1 Diagnostic feedback 1...4 of channel 1 to 4
5 IS2 On state: advanced current sense with defined signal in case
10 IS3 of overload or short circuit
11 IS4 Off state: High on failure
7 CLA 1/2 Current limit adjust; the current limit for channels 1/2 and 3/4 can
13 CLA 3/4 be chosen as high ( potential < 2,6V ) or low ( potential > 3,6V ).
2 GND 1/2 Ground of chip 1 ( channel 1,2 )
8 GND 3/4 Ground of chip 2 ( channel 3,4 )

Pin configuration
(top view )

V bb 1 • 28 V b b
GND ½ 2 27 O U T1
IN 1 3 26 O U T1
IS 1 4 25 O U T1
IS 2 5 24 OUT2
IN 2 6 23 OUT2
C LA ½ 7 22 OUT2
GND ¾ 8 21 OUT3
IN 3 9 20 OUT3
IS 3 10 19 OUT3
IS 4 11 18 OUT4
IN 4 12 17 O U T4
C LA ¾ 13 16 O U T4
V bb 14 15 V bb

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 PCN 2004-018-A: BTS 5440G

Maximum Ratings at Tj=25°C, unless otherwise specified

Parameter Symbol Value Unit
Supply voltage (overvoltage protection see page 6) Vbb 281) V
Supply voltage for full short circuit protection;Tj = -40...150°C Vbb(SC) 282)
Maximum voltage across DMOS VON 52
Load dump protection 3) VLoadDump4) = VA + VS; VA = 13,5 V VLoaddump
In = low or high; td = 400 ms; RI4) = 2 Ω
RL = 2.25 Ω 40
RL = 6.8 Ω 53
Load current (Short - circuit current, see page 7) IL IL(lim)5) A
Operating temperature range Tj -40...+150 °C
Storage temperature range Tstg -55...+150
Dynamical temperature rise at switching dT 60 K
Power dissipation6) (DC), all channels active TA = 85 °C Ptot 1,6 W
Maximal switchable inductance, single pulse ZL(s) mH
Vbb=12V, T jstart=150°C; (see diagrams on page 12)
IL = 6 A, EAS = 0.319 J, RL = 0 Ω, one channel: 9.8
IL = 12 A, EAS = 0.679 J, RL = 0 Ω, two parallel channels: 5.2
Electrostatic discharge voltage IN: VESD 1,0 kV
(Human Body Model) IS: 2,0
according to ANSI EOS/ESD - S5.1 - 1993 , ESD STM5.1 - 1998 OUT: 4,0
Continuous input voltage VIN -10...16 V
Voltage at current limit adjustment pin VCLA -10...16
Current through current limit adjustment pin I CLA ±5.0 mA
Current through input pin (DC) I IN ±5.0
Current through sense pin (DC) (see page 11) I IS -5...+10
118...28 V for 100 hours
2only single pulse, R = 200 mΩ ; L = 8 µH ; R and L are describing the complete circuit impedance including
L
line, contact and generator impedances.
3Supply voltage higher than V
bb(AZ) require an external current limit for the GND (150Ω resistor) and sense pin.
4R = internal resistance of the load dump test pulse generator.
I
5Current limit is a protection function. Operation in current limitation is considered as "outside" normal operating
range. Protection functions are not designed for continuous repetitive operation.
6Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for V
bb
connection. PCB is vertical without blown air.

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 PCN 2004-018-A: BTS 5440G

Electrical Characteristics
Parameter and Conditions, each of the four channels Symbol Values Unit
at Tj = -40...+150 °C, Vbb = 9...16 V, unless otherwise specified min. typ. max.
Thermal Resistance
junction - soldering point1) each channel: RthJS - - 25 K/W
junction - ambient2) one channel active: RthJA - 40 - K/W
all channels active: 32

Load Switching Capabilities and Characteristics

On-state resistance (Vbb to OUT), (see page 13) RON mΩ
Tj = 25 °C, IL = 5 A, each channel: - 21 25
Tj = 150 °C, each channel: - 42 50
Tj = 25 °C, two parallel channels: - 11 13
Tj = 25 °C, four parallel channels: - 5.5 6.5
Nominal load current2) I L(nom) A
Ta = 85°C, Tj ≤ 150°C , one channel active: 5.7 6.2 -
two channels active, per channel: 4.0 4.4 -
four channels active, per channel: 3.1 3.4 -
Output voltage drop limitation at small load currents VON(NL) - 40 - mV
IL = 0.5 A
Output current while GND disconnected 3) I L(GNDhigh) - - 2 mA
( see diagram page 12 )
VIN = 0 V

1Soldering point is measured at Vbb-pin

2Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for V
bb
connection. PCB is vertical without blown air.
3not subject to production test, specified by design

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 PCN 2004-018-A: BTS 5440G

Electrical Characteristics
Parameter and Conditions, each of the four channels Symbol Values Unit
at Tj = -40...+150 °C, Vbb = 9...16 V, unless otherwise specified min. typ. max.
Load Switching Capabilities and Characteristics
Turn-on time1) to 90% VOUT ton - 90 200 µs
RL = 12 Ω, V bb = 12 V
Turn-off time 1) to 10% VOUT toff - 100 220
RL = 12 Ω, V bb = 12 V
Slew rate on 1) 10 to 30% VOUT , dV/dton 0.1 0.25 0.45 V/µs
RL = 12 Ω, V bb = 12 V
Slew rate off 1) 70 to 40% VOUT , -dV/dtoff 0.09 0.25 0.4
RL = 12 Ω, V bb = 12 V

Operating Parameters
Operating voltage2) Vbb(on) 4.5 - 28 V
Overvoltage protection3) Vbb(AZ) 41 47 52
Ibb = 40 mA
Standby current 4) I bb(off) µA
(see diagram on page 13)
Tj = -40...+25 °C, VIN = 0 V - 10 15
Tj = 150 °C - - 40

1See timing diagram on page 14.

218V...28V for 100 hours
3Supply voltages higher than V
bb(AZ) require an external current limit for the status pin and GND pin (e.g. 150Ω).
See also VOut(CL) in table of protection functions and circuit diagram on page 11.
4Measured with load; for the whole device; all channels off.

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 PCN 2004-018-A: BTS 5440G

Electrical Characteristics
Parameter and Conditions, each of the four channels Symbol Values Unit
at Tj = -40...+150 °C, Vbb = 9...16 V, unless otherwise specified min. typ. max.
Operating Parameters
Off-State output current (included in Ibb(off) ) IL(off) - 1.5 8 µA
VIN = 0 V, each channel
Operating current 1) IGND - 1.6 4 mA
VIN = 5 V, per active channel

Protection Functions2)
Current limit, ( see timing diagrams, page 15 ) I L(LIM) A
Low level; if potential at CLA = high 7 11 14
High level; if potential at CLA = low 40 50 60
Current limit adjustment threshold voltage VCLA(T-) 2.0 - - V
VCLA(T+) - - 4.0
Repetitive short circuit current limit I L(SCr) A
Tj = Tjt (see timing diagrams on page 15)
High level one active channel: - 40 -
two active channels 3): - 40 -
Low level one active channel: - 7 -
two active channels 3): - 7 -
Initial short circuit shutdown time low level: t off(SC) - 3.5 - ms
Tj,start = 25°C ; Vbb = 13,5 V high level: - 0.75 -
Output clamp (inductive load switch off) 4) VOut(CL) - -15 - V
IL = 40 mA
Thermal overload trip temperature T jt 150 170 - °C
Thermal hysteresis ∆Tjt - 10 - K
1Add I , if I > 0
IS IS
2Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
3At the beginning of the short circuit the double current is possible for a short time.
4If channels are connected in parallel, output clamp is usually accomplished by the
channel with the lowest VOut(CL) .

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 PCN 2004-018-A: BTS 5440G

Electrical Characteristics
Parameter and Conditions, each of the four channels Symbol Values Unit
at Tj = -40...+150 °C, Vbb = 9...16 V, unless otherwise specified min. typ. max.
Diagnostic Characteristics
Open load detection voltage VOUT(OL) 2 3.2 4.4 V
Internal output pull down1) ROUT(PD) 11 23 35 kΩ
VOUT = 13.5 V
Current sense ratio, static on-condition kILIS
kILIS = IL :IIS
IL = 0.5 A 4640 5800 6960
IL = 3 A 4900 5400 5900
IL = 6 A 4900 5350 5800
Sense signal in case of fault-conditions 2) Vfault 5 6.2 7.5 V
in off-state
Current saturation of sense fault signal I fault 4 - - mA
Sense signal delay after thermal shutdown3) t delay(fault) - - 1.2 ms
Current sense output voltage limitation VIS(lim) 5.4 6.5 7.3 V
IIS = 0 , IL = 5 A
Current sense leakage/offset current I IS(LH) - - 5 µA
VIN = 5 V, IL = 0 , VIS = 0
Current sense settling time to IIS static ±10% t son(IS) - - 400 µs
after positive input slope 4) , IL = 0 to 5A
Current sense settling time to IIS static ±10% t slc(IS) - - 300
after change of load current4) , IL = 2.5 to 5A

1In case of floating output, the status doesn´t show open load.
2Fault condition means output voltage exceeds open load detection voltage V
OUT(OL)
3In the case of thermal shutdown the V
fault signal remains for t delay(fault) longer
than the restart of the switch ( see diagram on page 16 ).
4not subject to production test, specified by design

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 PCN 2004-018-A: BTS 5440G

Electrical Characteristics
Parameter Symbol Values Unit
at Tj = -40...+150 °C, Vbb = 9...16 V, unless otherwise specified min. typ. max.
Diagnostic Characteristics
Status invalid after negative input slope td(SToff) - - 1.2 ms
Status invalid after positive input slope td(STOL) - - 20 µs
with open load

Input Feedback1)
Input resistance (see circuit page 11) RI 2.0 3.5 5.5 kΩ
Input turn-on threshold voltage VIN(T+) - - 2.4 V
Input turn-off threshold voltage VIN(T-) 1.0 - -
Input threshold hysteresis ∆V IN(T) - 0.5 -
Off state input current I IN(off) 3 - 40 µA
VIN = 0.4 V
On state input current I IN(on) 20 50 90
VIN = 5 V

Reverse Battery2)
Reverse battery voltage -Vbb - - 27 V
Drain-source diode voltage (VOUT > Vbb) -VON - 330 - mV
Tj = 150 °C, Ibb = -10 mA

1If ground resistors R

GND are used, add the voltage drop across these resistor.
2Requires a 150Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode
has to be limited by the connected load. Power dissipation is higher compared to normal operating conditions
due to the voltage drop across the drain-source diode. The temperature protection is not active during reverse
current operation! Input and status currents have to be limited. (see max. ratings page 4 )

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 PCN 2004-018-A: BTS 5440G

Truth Table - for each of the four channels

Input Output Diagnostic
level level output
Normal L L Z 1)
Operation H Vbb I IS = IL / kilis
Current
H Vbb Vfault
Limitation 2)
Short circuit L L Z1)
to GND H L Vfault
Overtemperature L L Z1)
H L Vfault
Short circuit L Vbb Vfault
to Vbb H Vbb < IIS = IL / kilis3)
Open load L >Vout(OL) Vfault
H Vbb Z1)
L = " Low" Level Z = high impedance, potential depends on external circuit
H = "High" Level Vfault = 5V typ., constant voltage independent of external sense resistor.
Parallel switching of channels is possible by connecting the inputs and outputs parallel.
The current sense ouputs have to be connected with a single sense resistor.
Terms
Ibb
V V
V Leadframe ON1 V bb Leadframe ON3
bb V V
I IN1 ON2 I IN3 ON4
V bb Vbb
3 9 19
IN1 25 I IN3 I
L1 20 L3
I IN2 26 I IN4 OUT3
OUT1 12
6 27 21
IN2 IN4
I IS1 4 PROFET I IS3 10 PROFET I L4
IS1 I L2 IS3
22 16
V V I IS2 OUT2 VIN3 V I IS4 OUT4
IN1 IN2 5 IN4 11 17
IS2 23 IS4
13 18 V
V V 7 24 V V OUT3
IS2 IS1 CLA1/2 V IS4 IS3 CLA3/4
GND1/2 OUT1 GND3/4
V 2 V V 8 V
CLA1/2 OUT2 CLA3/4 OUT4
I I
GND GND

Leadframe (Vbb ) is connected to pin 1, 14, 15, 28

1L-potential by using a sense resistor

2Current limitation is only possible while the device is switched on.
3Low ohmic short to V may reduce the output current I and therefore also the sense current I .
bb L IS

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 PCN 2004-018-A: BTS 5440G

Input circuit ( ESD protection ), IN1...IN4 Inductive and overvoltage output clamp,
R
OUT1...OUT4
I
IN
+Vbb

V
Z
ESD-ZD I
I
I

GND OUT

V OUT

The use of ESD zener diodes as voltage clamp

at DC conditions is not recommended.
GND Power GND

V Out clamped to VOut(CL) = -15 V typ.

Sense-Status output, IS1...IS4
ON-State: Normal operation: IS = IL / kILIS
Overvolt. Protection of logic part
V IS = IS * RIS; RIS = 1kΩ nominal
OUT1...OUT4
RIS > 500Ω
+ V bb

Sense output V
Z2
V RI
logic IS IN
I IS
IS Logic

IS
Vf
V
Z1 PR O F ET
R
ESD-ZD IS GND

GND R IS R GND

Sig na l G N D

ESD zener diode: VESD = 6,1 V typ., max. 14 mA ; V Z1 = 6,1V typ., V Z2 = 47V typ., R GND = 150Ω ,
ON-State: Fault condition so as thermal shut down RIS = 1kΩ , R I = 3,5kΩ typ.
or current limitation
Sense output
logic Vfault
Vfault
Vf
R
ESD-ZD IS
GND

Vfault = 6 V typ ; Vfault < VESD under all conditions

OFF-State diagnostic condition:
Open Load, if VOUT > 3 V typ.; IN low

Int. 5V
IS - ST

RI S
ESD-
ZD
GND

ESD-Zener diode: 6,1V typ., max. 5mA; RST(ON) < 375Ω

at 1,6mA.. The use of ESD zener diodes as voltage clamp
at DC conditions is not recommended.

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 PCN 2004-018-A: BTS 5440G

Reverse battery protection Vbb disconnect with energized inductive

OUT1...OUT4 load
- V bb

V
Z2 Vbb
RI high
IN IN

L o g ic
PROFET OUT
IS
OUT
IS
V
Z1 GND
PROFET
-I G N D

R IS
R GND R Load V
bb

S ig n a l G N D Load G N D

For inductive load currents up to the limits defined

V Z1 = 6,1V typ., VZ2 = 47V typ., RGND = 150Ω
by ZL each switch is protected against loss of Vbb.
RIS = 1kΩ, RI = 3,5kΩ typ.
(max. ratings and diagram on page 12)
In case of reverse battery the load current has to Consider at your PCB layout that in the case of Vbb
be limited by the load. Protection functions are disconnection with energized inductive load all the
not active. load current flows through the GND connection.
Open load detection, OUT1...OUT4

Off-state diagnostic condition: Inductive load switch-off energy

Open load, if VOUT > 3 V typ.; IN = low dissipation
E bb
V
bb
E AS

R ELoad
E XT
Vbb
O FF IN

V PROFET OUT
OUT
= L
IS EL
Lo g ic
u n it
O p e n lo a d
d e tec tio n
GND
ZL
{
R
ER
L
S ig na l G N D

GND disconnect Energy stored in load inductance: EL = ½ * L * IL2

While demagnetizing load inductance,
the enérgy dissipated in PROFET is
EAS = Ebb + EL - ER = VON(CL) * iL(t) dt,
Vbb
IN
with an approximate solution for RL > 0Ω:
PROFET OUT

IS
GND
IL * L IL * R L
V
bb
V V
IN IS V E AS = *(V bb + | V OUT ( CL )| )* ln(1 + )
GND 2 * RL | V OUT ( CL )|

Any kind of load.

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 PCN 2004-018-A: BTS 5440G

Maximum allowable load inductance Typ. standby current

for a single switch off (one channel) I bb(off) = f(T j) ; V bb = 16 V ; V IN1...4 = low

L =f(IL); Tjstart = 150°C, Vbb = 12V, RL = 0Ω

16

1000
14

12

100 10

Ibb(off) [µA]
8
ZL(s) [mH]

10 6

2
1

0
-40 -20 0 20 40 60 80 100 120 140 160

0,1
Tj [°C]
0 5 10 15 20
I L [A]

Typ. on-state resistance

RON = f(V bb,T j); IL = 5 A ; V in = high

30

28

26

24
Ron [mOhm]

22

20

18

16

14

12
0 5 10 15 20 25 30 35
Vbb [V]

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 PCN 2004-018-A: BTS 5440G

Timing diagrams
All channels are symmetric and consequently the diagrams are valid for channel 1 to channel 4.

Figure 1a: Switching a resistive load, Figure 1c: Behaviour of sense output:
change of load current in on-condition Sense current (I S) and sense voltage (V S)
IN as function of load current dependent on
the sense resistor.
Shown is VS and IS for three different
VOUT
sense resistors. Curve 1 refers to a low
t on
t off resistor, curve 2 to a medium-sized
resistor and curve 3 to a big resistor.
IL t slc(IS) t slc(IS) Note, that the sense resistor may not falls
short of a minimum value of 500Ω.

Load 1 Load 2 VS

IS,V S VESD
Vfault
t son(IS) t 3
2

The sense signal is not valid during settling time after IL

turn on or change of load current. tslc(IS) = 300 µs typ. IS 1

2
Figure 1b: V bb turn on
3

IN

IL(lim) IL
Vbb
IS = I L / kILIS
V IS = I S * R IS; RIS = 1kΩ nominal
RIS > 500Ω
IL

IS ,V S

proper turn on under all conditions

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 PCN 2004-018-A: BTS 5440G

Figure 2a: Switching a lamp Figure 3a: Short circuit:

Shut down by overtemperature,
IN
reset by cooling

IN
IS

IL IL(lim)
V
OUT

I
L(SCr)

I
L

Vfault t delayfault
t VS

Figure 2b: Switching a lamp with current limit:

The behaviour of IS and VS is shown for a
Heating up may require several milliseconds,
resistor, which refers to curve 1 in figure 1c depending on external conditions.
IL(lim) = 50A typ. increases with
IN
decreasing temperature.
VO U T

Figure 3a: Turn on into short circuit,

shut down by overtemperature, restart by cooling
IL
( channel 1 and 2 switched parallel )
IN 1 /2

IS

2 x I L (lim )
I L 1 + IL 2
VS 2 x I L (lim )
V fa u lt
t

I L (S C r)

t
o ff(S C ) t d e la y fa u lt
VS1 , VS2
V fa u lt

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 PCN 2004-018-A: BTS 5440G

Figure 4a: Overtemperature Figure 6a: Current sense ratio 1)

Reset if T j < Tjt
The behaviour of IS and V S is shown for a resistor, 7000
kILIS
which refers to curve 1 in figure 1c.

IN
6000
IL

5000
IS

tdelay(fault) [A] IL
4000
TJ 0 1 2 3 4 5 6 7 8 9 10 11 12 13

Figure 5a:Open-load: detection in OFF-state,

turn on/off to open load.
Open load of channel 1; other channels normal
opertaion.

IN1

t off t off
V OUT1

I L1

tST delay tST delay

IS
Vfault

toff = 250µs max.; t ST delay = 500µs max.

with pull up resistor at output

1This range for the current sense ratio refers to all devices. The accuracy of the k
ILIS can
be raised by calibrating the value of kILIS for every single device.

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Package and ordering code

all dimensions in mm Published by
Infineon Technologies AG,
P-DSO-28-19 St.-Martin-Strasse 53,
D-81669 München
Sales Code BTS 5440G © Infineon Technologies AG 2001
Ordering Code Q67060-S6136 All Rights Reserved.

Attention please!
The information herein is given to describe certain
components and shall not be considered as
a guarantee of characteristics.

Terms of delivery and rights to technical change

reserved.

We hereby disclaim any and all warranties, including

but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC

manufacturer.

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For further information on technology, delivery
terms and conditions and prices please contact
your nearest Infineon Technologies Office in
Germany or our Infineon Technologies
Representatives worldwide (see address list).

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Due to technical requirements components may
contain dangerous substances. For information
on the types in question please contact your
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Infineon Technologies Components may only be

used in life-support devices or systems with the
express written approval of Infineon Technologies,
if a failure of such components can reasonably be
expected to cause the failure of that life-support
device or system, or to affect the safety or
effectiveness of that device or system. Life support
devices or systems are intended to be implanted in
the human body, or to support and/or maintain and
sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or
other persons may be endangered.

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