Scribd Logo
Upload

Welcome to Scribd!

  • 19 views

    2N3301 Datasheet

    Uploaded by

    Emerson Leiky Gutierrez Palao
    This document contains specifications for 2N3299 and 2N3300 general purpose NPN silicon transistors in TO-39 and TO-18 cases. It lists maximum ratings including collector-emitter voltage, collector current, and total device dissipation. Electrical characteristics are provided such as DC current gain, collector-emitter saturation voltage, and switching times.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    2N3301 Datasheet

    Uploaded by

    Emerson Leiky Gutierrez Palao
    19 views1 page
    This document contains specifications for 2N3299 and 2N3300 general purpose NPN silicon transistors in TO-39 and TO-18 cases. It lists maximum ratings including collector-emitter voltage, collector current, and total device dissipation. Electrical characteristics are provided such as DC current gain, collector-emitter saturation voltage, and switching times.

    Original Title

    2N3301 datasheet

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document contains specifications for 2N3299 and 2N3300 general purpose NPN silicon transistors in TO-39 and TO-18 cases. It lists maximum ratings including collector-emitter voltage, collector current, and total device dissipation. Electrical characteristics are provided such as DC current gain, collector-emitter saturation voltage, and switching times.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    19 views1 page

    2N3301 Datasheet

    Uploaded by

    Emerson Leiky Gutierrez Palao
    This document contains specifications for 2N3299 and 2N3300 general purpose NPN silicon transistors in TO-39 and TO-18 cases. It lists maximum ratings including collector-emitter voltage, collector current, and total device dissipation. Electrical characteristics are provided such as DC current gain, collector-emitter saturation voltage, and switching times.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 1

    2N3299

    2N3300
    CASE 79, STYLE 1

    TO-39 (TO-205AD)
    MAXIMUM RATINGS
    GENERAL PURPOSE
    Rating Symbol Value Unit
    TRANSISTOR
    Collector-Emitter Voltage VCEO 30 Vdc
    (Applicable to 10 mAdc)

    2N3301 Collector-Base Voltage

    Emitter-Base Voltage
    VCBO 60 Vdc
    VEBO 5.0 Vdc
    2N3302 Collector Current — Continuous ic 500 mAdc
    2N3299 2N3301
    CASE 22, STYLE 1
    2N3300 2N3302
    TO-18 (TO-206AA)
    Total Device Dissipation @ TA = 2F°C PD 0.8 0.36 Watt
    Derate above 25°C 4.56 2.06 mW/°C
    GENERAL PURPOSE
    Total Device Dissipation @ Tc = 25°C Pd 3.0 1.8 Watts
    TRANSISTOR Derate above 25°C 17.2 10.3 mW/°C
    NPN SILICON Operating and Storage Junction T J- Tstg - 65 to + 200 °c
    Temperature Range
    Refer to 2N2218 for graphs.

    ELECTRICAL CHARACTERISTICS (T A 25°C unless otherwise noted.)

    C OFF CHARACTERISTICS
    Characteristic Symbol Max Unit

    Collector-Emitter Sustaining Voltage! 1) 0c = 10 mAdc, Ib = 0) v CEO(sus) 30 _ Vdc


    Collector-Base Breakdown Voltage Oc = 10 /xAdc, Ie = 0) v (BR)CBO 60 — Vdc
    Emitter-Base Breakdown Voltage (lg = 10 /nAdc, \q = 0) v (BR)EBO 5.0 — Vdc
    Collector Cutoff Current (Vce = 50 Vdc, VgE = 0) Ices 0.01 jiAdc
    (V C E = 50 Vdc, V B e = 0, TA = 150°C) z 10
    Emitter Cutoff Current (Vbe = 3.0 Vdc, \q = 0) Iebo — 10 nAdc
    Base Current (Vce = 50 Vdc, Vbe = 0) >B
    — 10 nAdc
    ON CHARACTERISTICS
    DC Current Gain 2N3299, 2N3301 hFE 20
    Oc = 0.1 mAdc, V CE = 10 Vdc) 2N3300, 2N3302 35
    dC = 1.0 mAdc, V C e = 10 Vdc) 2N3299, 2N3301 25
    2N3300, 2N3302 50
    dC = 10 mAdc, Vce = 10 Vdc)(1) 2N3299, 2N3301 35
    2N3300, 2N3302 75
    dC = 150 mAdc, V C E = 1.0 Vdc)(1) 2N3299, 2N3301 20
    2N3300, 2N3302 50
    dC = 150 mAdc, V C E = 10 Vdc)(1) 2N3299, 2N3301 40 120
    2N3300, 2N3302 100 300
    dC = 500 mAdc, V C E = 10 Vdc)(1) 2N3299, 2N3301 20
    2N3300, 2N3302 50
    Collector-Emitter Saturation Voltage Oc = 150 mAdc, Ib = 15 mAdc) v CE(sat) — 0.22 Vdc
    OC = 300 mAdc, Ib = 30 mAdc) 0.45
    OC = 500 mAdc, Ib = 50 mAdc) 0.6

    Base-Emitter Saturation Voltage (Ic= 150 mAdc, Ib = 15 mAdc) v BE(sat) — 1.1 Vdc
    dC = 300 mAdc, Ib = 30 mAdc) 1.3
    OC = 500 mAdc, Ib = 50 mAdc) 1.5

    Oc = 150 mA, Vce =


    Base Emitter Voltage 10 V) v BE(on) - 1.1 V Max
    SMALL-SIGNAL CHARACTERISTICS
    Current-Gain — Bandwidth Product Oc = 50 mAdc, Vce = 10 Vdc, f = 100 MHz) fT 250 — MHz
    Output Capacitance (Vcb = 10 Vdc, Ie = 0, f = 140 kHz) C bo — 8.0 pF
    Input Capacitance (Vbe = 2.0 Vdc, Ic = 0, f = 140 kHz) Cjt>o - .
    20 pF
    SWITCHING CHARACTERISTICS
    Turn-On Time (Vce = 25 Vdc, Ic = 300 mAdc, Ibi = 30 mAdc) l on — 60 ns
    Turn-Off Time (Vce = 25 Vdc, Ic = 300 mAdc, Iq-j = Ib2 = 30 mAdc) toff
    - 150 ns
    (1) Pulse Test: Pulse Width =s 300 jus, Duty Cycle =s 2.0%.

    4-78

    You might also like