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SEMICONDUCTOR TECHNICAL DATA by BC635/D

  

NPN Silicon  
 
COLLECTOR
 
2

3
BASE

1
EMITTER
1
MAXIMUM RATINGS 2
3
BC BC BC
Rating Symbol 635 637 639 Unit CASE 29–04, STYLE 14
Collector – Emitter Voltage VCEO 45 60 80 Vdc TO–92 (TO–226AA)

Collector – Base Voltage VCBO 45 60 80 Vdc

Emitter – Base Voltage VEBO 5.0 Vdc
Collector Current — Continuous IC 0.5 Adc
Total Device Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C 5.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 1.5 Watt
Derate above 25°C 12 mW/°C
Operating and Storage Junction TJ, Tstg – 55 to +150 °C
Temperature Range

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 200 °C/W
Thermal Resistance, Junction to Case RqJC 83.3 °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) V(BR)CEO Vdc
(IC = 10 mAdc, IB = 0) BC635 45 — —
BC637 60 — —
BC639 80 — —
Collector – Base Breakdown Voltage V(BR)CBO Vdc
(IC = 100 µAdc, IE = 0) BC635 45 — —
BC637 60 — —
BC639 80 — —
Emitter – Base Breakdown Voltage V(BR)EBO 5.0 — — Vdc
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current ICBO
(VCB = 30 Vdc, IE = 0) — — 100 nAdc
(VCB = 30 Vdc, IE = 0, TA = 125°C) — — 10 µAdc

1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle 2.0%.

Motorola Small–Signal Transistors, FETs and Diodes Device Data 1

 Motorola, Inc. 1996
  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS(1)
DC Current Gain hFE —
(IC = 5.0 mAdc, VCE = 2.0 Vdc) 25 — —
(IC = 150 mAdc, VCE = 2.0 Vdc) BC635 40 — 250
BC637 40 — 160
BC639 40 — 160
(IC = 500 mA, VCE = 2.0 V) 25 — —
Collector – Emitter Saturation Voltage VCE(sat) — — 0.5 Vdc
(IC = 500 mAdc, IB = 50 mAdc)
Base–Emitter On Voltage VBE(on) — — 1.0 Vdc
(IC = 500 mAdc, VCE = 2.0 Vdc)

DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product fT — 200 — MHz
(IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz)
Output Capacitance Cob — 7.0 — pF
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance Cib — 50 — pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle 2.0%.

2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

   
1000 500
500 VCE = 2 V
IC, COLLECTOR CURRENT (mA) SOA = 1S
200 PD TA 25°C

hFE, DC CURRENT GAIN

200
100

50 PD TC 25°C
100
20
10
50
5
BC635
PD TA 25°C
2 BC637
PD TC 25°C
BC639
1 20
1 2 3 4 5 7 10 20 30 40 50 70 100 1 3 5 10 30 50 100 300 500 1000
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 1. Active Region Safe Operating Area Figure 2. DC Current Gain

f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

500 1

300
0.8 VBE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)
VBE(on) @ VCE = 2 V
0.6
VCE = 2 V
100
0.4

50
0.2

VCE(sat) @ IC/IB = 10
20 0
1 10 100 1000 1 10 100 1000
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 3. Current–Gain — Bandwidth Product Figure 4. “Saturation” and “On” Voltages

–0.2
θV, TEMPERATURE COEFFICIENTS (mV/°C)

–1.0

VCE = 2 VOLTS
∆T = 0°C to +100°C
–1.6

θV for VBE

–2.2
1 3 5 10 30 50 100 300 500 1000
IC, COLLECTOR CURRENT (mA)

Figure 5. Temperature Coefficients

Motorola Small–Signal Transistors, FETs and Diodes Device Data 3

  
PACKAGE DIMENSIONS

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A B
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R 4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
P MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
L
SEATING F
PLANE K INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
D B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
J D 0.016 0.022 0.41 0.55
X X F 0.016 0.019 0.41 0.48
G G 0.045 0.055 1.15 1.39
H H 0.095 0.105 2.42 2.66
SECTION X–X J 0.015 0.020 0.39 0.50
V C K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
1 N P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
N V 0.135 ––– 3.43 –––

STYLE 14:
PIN 1. EMITTER
CASE 029–04 2. COLLECTOR
(TO–226AA) 3. BASE
ISSUE AD

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4 Motorola Small–Signal Transistors, FETs and Diodes Device Data

 
◊ BC635/D