LAB EXPERIMENT -4

SOLID STATE PHYSICS LAB

SUBMITTED BY-TUSHAR GAUTAM
ROLL NO.-816
IIIrd Y EAR
UNIVERSITY ROLL NO.-19026567101
COURSE-B.Sc(H) PHYSICS
SUBMITTED TO- DR. SANJAY KUMAR & DR. MANJU BALA
DEPARTMENT OF PHYSICS,HINDU COLLEGE,DELHI UNIVERSITY

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EXPERIMENT NO.4 SOLID STATE PHYSICS LAB

EXPERIMENT NO.-4
The Conductivity Measurements are not sufficient for the determination of the num-
ber density of Charge Carriers (n) and their mobility (µ).Moreover these Measure-
ments do not give any information about the sign of the Majority Charge Carriers.
The Hall Effect supplies all this Information.
Consider the action of the Magnetic Field on Electric Current Flowing in an extrinsic
Semiconductor. The moment the Electric Field is switch on, an Electric Current is
established , the density of which is

J=σE
The Charge carriers acquire a directional velocity vd (drift velocity) in the Direc-
tion of the Field in case of Holes and against the Field in case of Holes and against
the Field in case of Electrons.
When The Magnetic field is Switched on ,a Force perpendicular to both vd and B
begins to act on electrons and Holes

F=e(vd × B)
This is called Lorentz Force whose direction is given by the Fleming Left hand
Rule.
Since for electrons both e abd vd are Negative and for holes are postive, the Lorentz
force is same for both type of carriers i.e. the Lorentz Force is independent of Charge
Carrier sign,being dependent only on the direction of I and B.F is directed upwards
fir both n and p Type Semiconductors i.e.the Electrons and Hols are de-
flected in the same direction under the effects of a given electric and
Magnetic Field
The Opposite faces of the sample will become charged and as a result an Electric
Field EH will be established. This Field is called Hall Field and Phenomena is
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called the Hall-Effect. The value of EH will continue to grow until the Lorentz
Force is compensated by the oppositely directed electric force qEH

eEH =F
Remember that the charge e on the carriers ispositive for holes and negative for
electrons. Thus while EH is oppositely directly in p-type and n type semicon-
ductors , the electric force eEH is in the same directed for both and that is in
a direction opposite to that of Lorentz Force.
Clearly, the Hall Field is a function of the applied magnetic Field B and the Current
density j i.e

EH = RH jB
where RH is the constant of proportionality and is called HALL Coefficient.
Thus the Hall Coefficient may be numerically defined as the Hall
Electric Field produced by unit current density and unit magnetic
Field. It is measured in unit Ωm3W eber−1
eEH = F = evdB
=eµEB (as µ = vEd )
from above Equations
RH j = µE
RH = µE j
µE
= σE
1
RH = ne
Here σ and n denote the Electrical Conductivity and the Carrier concentration of
the semiconductor respectively

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EXPERIMENT NO.4 SOLID STATE PHYSICS LAB

AIM-: To Study the Hall Effect and hence to determine the

(i) Hall Coefficient, RH
(ii) Hall Angle ,φ
(iii) Carrier Concentration , n
(iv) Conductivity Type for a given sample of Semiconductor

Apparatus :
A Thin Semi-Conductor Rectangular Slab (Length is greater than 3× Width), a
constant current power supply (0-20 mA), an Electromagnet, Caliberated Fluxme-
ter to measure the magnetic Field, a Digital milliammeter, a digit millivoltmeter, a
voltmeter, two simple keys and connecting wires .

Theory::

If a current I is passed in x direction of th specimen and magnetic field B is applied

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in y direction, called the Hall Voltage VH is produced in z direction. The Sign

of this voltage depends on the Nature of the charge carriers and can be used to find
out whether the sample is P&N Type.
Hall-Coefficient:
Supose the Semiconductor specimen is a slab of length l, width w and thichness t.
I
We Know Hall Field is given by , EH = RH jB where j= wt is the current density
and B is the applied magnetic Field and RH is the Hall Coefficient and is given by ::

1
RH = ne
EH = RHwtIB
As wEH is equal to the Hall Voltage VH , the Hall Coefficient RH is given by ::

RH = VIB
Ht

Hall Angle
A Charge Carrier (electron or Hole) in the Semiconductor is under influence of two
electric Fields simultaneously, applied Electric Field (E) and Hall Field (EH ) at right
angles to each other. the Resultant Electric Field E’=E+EH will make an angle φ
with x axis or with the Direction of current. The angle φ which E’ makes with the
Direction of current is termed as Hall Angle, Thus

tan(φ)= EEH
= VVHwl
Carrier Concentration.
The Relation between the carrier concentration n and the Hall Coefficient RH is
given by

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RH = ne
the carrier Concentration
n= R1 e
H
where e is the Electronic Charge

Fig.1 Schematic of Hall Effect

Procedure..
1.Place the Semiconductor sample at the centre between the pole pieces of the Elec-
tromagnet with the help of a stand such that the magnetic Field is perpendicular to
the face of the sample i.e. B is along the thickness of the sample. make connection
and switch on the constant current Power supply. The Current flows along the length
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of the specimen.

2. Note Down the Current I through the sample and the voltage V’ across it.
3. Close the key K. The Voltage appearing along the width of the sample is called
the Offset Voltage Note it Down.
4. Open the Key K, Switch on the Electromagnetic and wait for 2-3 minutes. Close
the Key K and measure the hall Voltage developed along the width of the specimen.
Subtract the offset voltage from it to get the corrected Hall-Voltage VH . Switch off
the Magnet.

5. Increase the Current through the sample in small steps and repeat the process
to take at least 6-7 observation. Remember that while measuring V, magnetic field
should remain off. It should be switched on only for measuring VH

6. Measure the magnetic field strength B with the help of a Gauss-meter

7. Measure the length, width and thickenss of the specimen with the help of vernier
callipers and screw Gauge
8. Plot the Following Graphs:
(i) I along x axis and VH along Y axis.
(ii) V along x axis and VH along y axis.

Observation.
Width of the Specimen,b= 4mm=4×10−3m
Length of The Specimen,l=6mm=6×10−3m
Least Count of measuring instrument (Length)=0.01mm
Thickness of the specimen,t,=0.5 mm =5×10−4m
Magnetic Flux Density, B=3110 Gauss= 3110×10−4Tesla
TABLE FOR I AND V

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VH
S.No. Current I(mA) Reading of milli-voltemter Mean Value of VH (mV) I
B and I in One Direction B and I in opposite Direction
1 0.48 0.9 1.1 1.0 2.08
2 0.99 2.0 2.2 2.1 2.12
3 2.01 4.1 4.5 4.3 2.14
4 3.01 6.2 6.9 6.55 2.18
5 4.04 8.3 9.2 8.75 2.1
6 5.14 10.5 11.7 11.1 2.15
7 6.12 12.3 13.7 13 2.12
8 7.2 14.1 15.9 15 2.08
9 8.2 16.2 18.3 17.25 2.10
10 9.11 17.8 20.5 19.15 2.10
11 10.06 19.2 22.7 20.95 2.08
12 11.21 21 25.2 23.1 2.06
13 13.20 23.8 30.2 27 2.045
14 14.02 24.09 31.6 28.25 2.014

V bt
S.No. Current I(mA) Distance between Points whose potential is measured V(mV) Il
1 0.48 0.206 ×10−2 1.0 2.02 ×10−3
2 0.99 0.206 ×10−2 2.1 2.06 ×10−3
3 2.01 0.206 ×10−2 4.3 2.07 ×10−3
4 3.01 0.206 ×10−2 6.5 2.11 ×10−3

GRAPH BETWEEN VH and I

CALCULATIONS:
1. Mean Value of VIH =2.09 Ω

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2. RH = VIBHb

=2.09× 0.004 ×10 / 3110

3. Sign of Hall Coefficient is positive , thus the semiconductor crystal is of P Type
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4. n= 1.6×10−19 ×RH
=2.32 ×10 carriers m−3
20

5. ρ = 2.0655 × 103Ωm
6. µ = RρH
=13 m2V s−1
7. Hall Angle (θ)= tan−1(µB)
=-76.10

PRECAUTIONS AND SOURCES OF ERROR:

1. Hall Voltage developed is very small and hence it must be measured very carefully
by a high input impedance (= 1M Ω) device such as electronic digital voltmeter or
electrometer.
2. Sometimes VH is not zero for zero magnetic Field. This is due to imperfect align-
ment between the contacts for measuring VH . This Offset Voltage Should be taken
care of.
3. The Theory Assumes all the carriers are moving only lengthwise , Practically it
has been found that a closer to ideal situation may be obtained if the length of the
sample is atleast three time sits width.
4. Reading for VH should be taken 2-3 minutes after switching on their magnetic
Field.
5. While determining the Hall coefficient, variation of VH with I is preferred over the
variation of VH with B due to difficulties arising in the accurate determination of B.
6. For no Field readings care should be taken that no remanent field exists in the
electromagnet when switched off.
7. The Magnetic field should be measured carefully.
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8. The Current through the sample should not be large enough to cause heating.
9.Before Starting Experiment Check that Gauss meter is showing zero value. for this
Put the Probe away from the Electromagnet and switch on the Gauss meter, adjust
its zero adjustment knob.

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