Military High Power Radar TRN SI

RF MILITARY
MMRF2010N | MMRF1312H
MMRF1314H | MMRF1317H
HIGH POWER LDMOS AVIONICS DEVICES
APRIL 2016
EXTERNAL USE
NXP RF Military Overview
• NXP RF (formerly Freescale) is #1 in RF power for cellular infrastructure*
• Strong presence in ISM, mobile radio, broadcast and avionics
• June 2013: Freescale RF announced new focus supporting U.S. defense
industry
NXP RF Military Value Proposition

• Products and Technology
− Leveraging 20 years of innovation in RF power
− Highest performing RF portfolio
• Support
− U.S. LDMOS fabrication and dedicated internal manufacturing
− NXP product longevity program (10 or 15 years)
− Dedicated U.S.-based applications & systems engineering support
• Compliance
− ITAR compliant, secure technical data handling
*Source: ABI 2013 Report
1 EXTERNAL USE
MMRF2010N: 250 W Peak – L-Band Transistor
1030–1090 MHz • 1030 to 1090 MHz
• 250 W Peak, 50 V
• Gain: 32.1 dB @ 1090 MHz, Drain Efficiency: 61.4%
• Housed in TO-270WB plastic package
• Ruggedness: > 10:1 VSWR
• Product Longevity Program: warranted availability until 2029
50 V
• Typical Applications
250 W Peak
• IFF and secondary radar
Available Reference Circuits:

1. 1090 MHz
2. 1030-1090 MHz
2 EXTERNAL USE
MMRF2010N: Featured Device
Features
• Characterized over 1030–1090 MHz
• On-chip input (50 ohm) and interstage matching
• Single ended
• Integrated ESD protection
• Low thermal resistance
• Integrated quiescent current temperature compensation with enable/disable function
Competitive Advantages
• Suitable for use in pulse applications with large duty cycles and long pulses
• Device in NXP 15 year Product Longevity Program
• Able to replace multiple RF amplifiers with one wideband PA
• Application circuit support
• Dedicated RF Military team
• Availability: Device is in production as earless and gull winged. Orderable part number is
MMRF2010NR1.
3 EXTERNAL USE
MMRF2010N Applications Circuit: 1030 to 1090 MHz
4 EXTERNAL USE
MMRF1312H: 1200 W Peak – L-Band Transistor
900–1215 MHz • High power 1200 W Peak @ P3dB across 900 to 1215 MHz in one circuit
• Gain: 17.3 dB @ 960–1215 MHz, Drain Efficiency: 54%
• Housed in NI-1230 air-cavity ceramic package
• High Ruggedness: > 20:1 VSWR
•Typical Applications
52 V • High power L-Band radar applications
• Avionics navigation applications
1200 W Peak • Commercial aviation secondary surveillance radar

1. 1030 MHz
2. 900-1215 MHz
5 EXTERNAL USE
MMRF1312H: Featured Device
Features
• Internally input and output matched for broadband operation and ease of use
• Device can be used in a single-ended, push-pull or quadrature configuration
• High ruggedness, handles > 20:1 VSWR
• Integrated ESD protection with greater negative voltage range for improved
Class C operation and gate voltage pulsing
• Characterized with series equivalent large-signal impedance parameters
• Suitable for use in pulse applications with large duty cycles and long pulses
• Availability: Device is in production as eared, earless and gull winged. Orderable part number is
MMRF1312HR5.
6 EXTERNAL USE
MMRF1312H Applications Circuit: 900 to 1215 MHz
7 EXTERNAL USE
MMRF1312H: Gain, Efficiency and IRL versus Frequency
8 EXTERNAL USE
MMRF1312H: Gain and Efficiency versus Power
9 EXTERNAL USE
MMRF1312H: Power and Efficiency versus Frequency
10 EXTERNAL USE
MMRF1314H: 1000 W Peak – L-Band Transistor
1200 –1400 MHz • High power 1000 W Peak across 1200 to 1400 MHz in one circuit
• Gain: 15.5 dB @ 1200–1400 MHz, Drain Efficiency: 46.5%
52 V • High power L-Band radar applications
1000 W Peak

1. 1400 MHz
2. 1200-1400 MHz
11 EXTERNAL USE
Features
• Integrated ESD protection with greater negative voltage range for improved Class C operation and
gate voltage pulsing
MMRF1314HR5.
12 EXTERNAL USE
13 EXTERNAL USE
MMRF1314H: Gain, Efficiency and IRL versus Frequency
14 EXTERNAL USE
MMRF1314H: Power and Efficiency versus Frequency
15 EXTERNAL USE
16 EXTERNAL USE
MMRF1317H: 1500 W Peak – IFF Transistor
1030–1090 MHz • High power 1500 W Peak @ P3dB

• Gain: 18.9 dB @ 1030 MHz, Drain Efficiency: 56%
50 V • Defense and commercial pulse applications, such as IFF and
secondary surveillance radars
1500 W Peak
Available Reference Circuit:

1. 1030 to 1090 MHz
17 EXTERNAL USE
Features
• Integrated ESD protection with greater negative voltage range for improved Class C operation and
gate voltage pulsing
MMRF1317HR5.
18 EXTERNAL USE
19 EXTERNAL USE
20 EXTERNAL USE

Military High Power Radar TRN SI

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Military High Power Radar TRN SI

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RF MILITARY

NXP RF Military Value Proposition

Available Reference Circuits:

Available Reference Circuits:

Available Reference Circuits:

1030–1090 MHz • High power 1500 W Peak @ P3dB

Available Reference Circuit:

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