SEMICONDUCTOR PC817

TECHNICAL DATA

1-CHANNEL TRANSISTOR OUTPUT TYPE PHOTO COUPLER

PC817
The PC817 Series contains a light emitting diode optically coupled to
a phototransistor. Input-output isolation voltage is 5000Vrms. Response
time(tr) is typically 4us and minimum CTR is 50% at input current of

6.5 +_ 0.5
5mA.

FEATURES _ 0.5
4.6 + _ 0.3
7.62 +

Collector-Emitter Voltage : Min.80V

3.5 +_ 0.5
Current Transfer Ratio
0.5TYP.
(CTR : MIN. 50% at IF=5mA, VCE=5V).

3.3 +_ 0.5
2.8 +_ 0.5
0.26

High isolation voltage between input and output.

0.5 _ 0.1 7.62~9.98
(VISO=5,000Vrms) 2.54 _ 0.25

DIP-4

PC817M
APPLICATIONS
Feedback circuit in power supply.

6.5 +_ 0.5
Switching Mode Power Supply.
System appliances, Measuring instruments.
Registers, Copiers, Automatic vending machines.
Electric home applicances such as fan heaters, etc.
4.6 _ 0.5 7.62 _ 0.3
3.5 +_ 0.5

6.9 +_ 0.5
2.8 +_ 0.5

2.3 +_0.5

0.26

BLOCK DIAGRAM AND PIN CONFIGURATIONS (TOP VIEW) 0.5 0.1

_
10.16 _ 0.5

2.54 _ 0.25

1 4 1. ANODE DIP-4 (M)

2. CATHODE
3. EMITTER PC817S
2 3 4. COLLECTOR
6.5 +_ 0.5

RANK TABLE OF CURRENT TRANSFER RATIO(CTR)

RANK MARK CTR (%) TEST CONDITION

4.6 _ 0.5 7.62 _ 0.3

(None) 50~600
3.5 +_ 0.5

A 80~160
0.26 +_ 0.1

1.2 _ 0.1 1 _ 0.25

0.35 +0.25/-0.30

B 130~260
2.54 _ 0.25 10.16 _ 0.5
IF=5mA, VCE=5V, Ta=25
C 200~400
D 300~600
L 50~100
DIP-4(S)

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 PC817

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC SYMBOL RATING UNIT
Forward Current IF 50 mA
Input Reverse Voltage VR 6 V
Power Dissipation PD 70 mW
Collector Power Dissipation PC 150 mW
Collector Current IC 50 mA
Output
Collector-Emitter Voltage VCEO 80 V
Emitter-Collector Voltage VECO 6 V
Total Power Dissipation Ptot 200 mW
Isolation Voltage VISO 5000 Vrms
Operating Temperature Topr -50 110
Storage Temperature Tstg -55~125
Soldering Temperature Tsol 260

ELECTRO-OPTICAL CHARACTERISTICS (Ta=25℃ unless otherwise noted)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward VF IF=20mA - 1.2 1.4 V
Input Reverse Current IR VR=4V - - 10 uA
Terminal Capacitance Ct V=0, f=1kHz - 30 250 pF
Collector Dark Current ICEO VCE=20V, IF=0 - - 100 nA
Collector-Emitter Breakdown
BVCEO IC=0.1mA, IF=0 80 - - V
Output Voltage
Emitter-Collector Breakdown
BVECO 10uA, IF=0 6 - - V
Voltage
*Current Transfer Ratio CTR IF=5mA, VCE=5V 50 - 600 %
Collector-Emitter Saturation
VCE(sat) IF=20mA, IC=1mA - 0.1 0.2 V
Voltage
Isolation Resistance RISO DC500V, 40~60% R.H. 5 1010 1 1011 -
Transfer
Characteristics Floating Capacitance Cf V=0, f=1MHz - 0.6 1.0 pF
Cut-off Frequency FC VCE=5V, IC=2mA, RL=100 , -3dB - 80 - kHz
Rise Time Tr VCE=2V, IC=2mA, RL=100 - 4 18 us
Fall Time Tf VCE=2V, IC=2mA, RL=100 - 3 18 us

IC
* CTR = 100%
IF

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 PC817

Collector Power Dissipation vs.

Forward Current vs. Ambien Temperature Ambien Temperature
60 200

Collector Dissipation Power (mW)

50
Forward Current (mA)

150
40

30 100

20
50
10

0 0
-25 0 25 50 75 100 125 -25 0 25 50 75 100 125

Ambient Temperature ( C) Ambient Temperature ( C)

Current Transfer Ratio vs. Forward Current Forward Current vs. Forward Voltage

200 600
VCE=5V
180 75 C
Current transfer ratio CTR (%)

Ta=25 C
50 C
Forward Current IF (mA)

160 Ta=25 C
100 0 C
140 -25 C
120
100
80 10
60
40
20 1
0 0.6
1 10 50 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Forward current IF (mA) Forward Voltage VF (V)

Collector Current vs. Relative Current Transfer Ratio vs.

Collector-Emitter Voltage Ambient Temperature

30 150
Relative Current Transfer Ratio (%)

Ta=25 C IF=5mA
IF=30mA
VCE=5V
25
Collector Current IC (mA)

20mA PC(MAX.)

20 100

15
10mA

10 50
5mA
5

0 0
0 1 2 3 4 5 6 7 8 9 -30 0 25 50 75 100 125

Collector-Emitter Voltage VCE (V) Ambient Temperature ( C)

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 PC817

Collector-Emitter Saturation Voltage vs. Collector Dark Current vs.

Ambient Temperature Ambient Temperature
-5
0.16 10
Collector-Emitter Saturation Voltage

IF=20mA VCE=20V

Collector Dark Current ICEO (A)

IC=1mA
0.14 -6
10
0.12
-7
10
VCE(sat) (V)

0.10
-8
0.08 10

0.06 -9
10
0.04
-10
10
0.02
-11
0 10
-25 0 25 50 75 100 125 -25 0 25 50 75 100 125

Ambient Temperature ( C) Ambient Temperature ( C)

Response Time vs. Load Resistance Frequency Response

500 40
VCE=2V VCE=2V
IC=2mA IC=2mA
Ta=25 C Ta=25 C
100 0
Response Time (us)

Voltage Gain AV (dB)

tr
tf
10
100
1k
td -10 RL=10k
1 ts

0 -20
0.07 0.1 1 10 0.5 1 10 100 500

Load Resistance RL (k ) Frequency f (kHz)

Collector-Emitter Saturation Voltage vs. TEST Circuit for Response Time

Forward Current

6
Collector-Emitter Saturation Voltage

Ta=25 C

5 IC=0.5mA VCC
Input
1mA
4 3mA Input RD RL Output Output
VCE(sat) (V)

5mA 10%
3 7mA
90%
2 td tS
tr tf
1

0
0 5 10 15

Forward Current IF (mA)

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