IRF530

IRF530FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE V DSS R DS(on) ID
IRF530 100 V < 0.16 Ω 16 A
IRF530F I 100 V < 0.16 Ω 11 A
■ TYPICAL RDS(on) = 0.12 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY 3 3
2 2
■ 175oC OPERATING TEMPERATURE 1 1
■ APPLICATION ORIENTED
CHARACTERIZATION TO-220 TO-220FI

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ DC-DC & DC-AC CONVERTER INTERNAL SCHEMATIC DIAGRAM
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMP DRIVERS Etc.)

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Uni t
IRF530 IRF 530FI
V DS Drain-source Voltage (V GS = 0) 100 V
V DGR Drain- gate Voltage (R GS = 20 kΩ) 100 V
V GS Gate-source Voltage ± 20 V
ID Drain Current (continuous) at Tc = 25 o C 16 11 A
o
ID Drain Current (continuous) at Tc = 100 C 11 7.8 A
IDM (•) Drain Current (pulsed) 64 64 A
o
P t ot Total Dissipation at Tc = 25 C 90 40 W
Derating F actor 0.6 0.27 W/ o C
Viso Insulation Withstand Voltage (DC) - 2000 V
o
T stg Storage T emperature -65 to 175 C
o
Tj Max. O perating Junction Temperature 175 C
(•) Pulse width limited by safe operating area (1) ISD ≤11 Α, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

March 1998 1/6

IRF530/IRF530FI

THERMAL DATA
TO-220 T O220-F I
o
R t hj-ca se Thermal Resistance Junction-case Max 1 3.75 C/W
o
R t hj- amb Thermal Resistance Junction-ambient Max 62.5 C/W
o
R thc- si nk Thermal Resistance Case-sink Typ 0.5 C/W
o
Tl Maximum Lead Temperature For Soldering Purpose 300 C

AVALANCHE CHARACTERISTICS
Symb ol Parameter Max Valu e Unit
I AR Avalanche Current, Repetitive or Not-Repetitive 16 A
(pulse width limited by Tj max, δ < 1%)
E AS Single Pulse Avalanche Energy 100 mJ
o
(starting Tj = 25 C, I D = IAR , VDD = 50 V)

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

OFF
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
V (BR)DSS Drain-source I D = 250 µA V GS = 0 900 V
Breakdown Voltage
I DSS Zero G ate Voltage V DS = Max Rating 1 µA
Drain Current (VGS = 0) V DS = Max Rating T c = 125 oC 10 µA
I GSS Gate-body Leakage V GS = ± 20 V ± 100 nA
Current (V DS = 0)

ON (∗)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
V GS(th) Gate Threshold V DS = VGS ID = 250 µA 2 3 4 V
Voltage
R DS( on) Static Drain-source On V GS = 10V ID = 8 A 0.12 0.16 Ω
Resistance
ID(o n) On State Drain Current V DS > I D(on) x R DS(on) max 16 A
V GS = 10 V

DYNAMIC
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
g fs (∗) Forward V DS > I D(on) x R DS(on) max ID = 8 A 5 8 S
Transconductance
C iss Input Capacitance V DS = 25 V f = 1 MHz VGS = 0 950 1300 pF
C oss Output Capacitance 150 270 pF
C rss Reverse T ransfer 50 70 pF
Capacitance

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 IRF530/IRF530FI

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
t d(on) Turn-on Time V DD = 50 V ID = 8 A 12 16 ns
tr Rise Time R G = 4.7 Ω VGS = 10 V 20 28 ns

Qg Total Gate Charge V DD =80 V I D =16 A V GS = 10 V 32 44 nC

Q gs Gate-Source Charge 9 nC
Q gd Gate-Drain Charge 13 nC

SWITCHING OFF
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
t r(Vof f) Off-voltage Rise Time V DD = 80 V I D =16 A 11 15 ns
tf Fall Time R G = 4.7 Ω V GS = 10 V 12 17 ns
tc Cross-over Time 25 35 ns

SOURCE DRAIN DIODE

Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I SD Source-drain Current 16 A
I SDM (•) Source-drain Current 64 A
(pulsed)
V SD (∗) Forward On Voltage I SD = 16 A V GS = 0 1.6 V
t rr Reverse Recovery I SD =16 A di/dt = 100 A/µs 150 ns
o
Time V DD = 30 V Tj = 150 C
Q rr Reverse Recovery 0.8 µC
Charge
I RRM Reverse Recovery 10 A
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area

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IRF530/IRF530FI

TO-220 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
E
A

D
C

D1

L2
F1

G1

H2
G

Dia.
F
F2

L5
L9
L7

L6 L4
P011C

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 IRF530/IRF530FI

ISOWATT220 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.4 0.7 0.015 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126

E
A

D
B

L3

L6
L7
F1

¯
G1

G
H

F2

1 2 3

L2 L4
P011G

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 IRF530/IRF530FI

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.

 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved

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