N - Channel 50V - 0.085 - 17A To-220 Stripfet Power Mosfet
N - Channel 50V - 0.085 - 17A To-220 Stripfet Power Mosfet
N - Channel 50V - 0.085 - 17A To-220 Stripfet Power Mosfet
APPLICATIONS TO-220
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ REGULATORS
THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 2.5 C/W
o
R thj-amb Thermal Resistance Junction-ambient Max 62.5 C/W
AVALANCHE CHARACTERISTICS
Symbol Parameter Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive 17 A
(pulse width limited by T j max)
E AS Single Pulse Avalanche Energy 50 mJ
(starting T j = 25 o C, I D = I AR , V DD = 25 V)
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V GS(th) Gate Threshold Voltage V DS = V GS I D = 1 mA 2.1 3 4 V
R DS(on) Static Drain-source On V GS = 10 V ID = 9 A 0.085 0.1 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g fs (∗) Forward V DS = 25 V ID = 9 A 4 7.7 S
Transconductance
C iss Input Capacitance V DS = 25 V f = 1 MHz V GS = 0 760 pF
C oss Output Capacitance 100 pF
C rss Reverse Transfer 30 pF
Capacitance
SWITCHING
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t d(on) Turn-on Time V DD = 30 V ID = 8 A 20 ns
tr Rise Time R GS = 50 Ω V GS = 10 V 65 ns
t d(of f) Turn-off Delay Time 70 ns
tf Fall Time 35 ns
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Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Fig. 4: Gate Charge test Circuit
Resistive Load
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mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
E
A
D
C
D1
L2
F1
G1
H2
G
Dia.
F
F2
L5
L9
L7
L6 L4
P011C
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