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    NTE2393 Mosfet N-Channel Enhancement Mode, High Speed Switch

    Uploaded by

    Abel Rodriguez
    The NTE2393 is an N-channel enhancement mode power MOSFET suitable for high-speed switching applications up to 500V and 9A, such as power supplies and motor controls. It has ultra-fast switching under 100kHz, high voltage tolerance up to 500V, and high current rating up to 9A for power supplies up to 350W. Key specifications include gate threshold voltage of 2-4V, static drain-source resistance below 1.4 ohms, and turn-on/off times as fast as 30-170 nanoseconds.

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    NTE2393 Mosfet N-Channel Enhancement Mode, High Speed Switch

    Uploaded by

    Abel Rodriguez
    37 views3 pages
    The NTE2393 is an N-channel enhancement mode power MOSFET suitable for high-speed switching applications up to 500V and 9A, such as power supplies and motor controls. It has ultra-fast switching under 100kHz, high voltage tolerance up to 500V, and high current rating up to 9A for power supplies up to 350W. Key specifications include gate threshold voltage of 2-4V, static drain-source resistance below 1.4 ohms, and turn-on/off times as fast as 30-170 nanoseconds.

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    The NTE2393 is an N-channel enhancement mode power MOSFET suitable for high-speed switching applications up to 500V and 9A, such as power supplies and motor controls. It has ultra-fast switching under 100kHz, high voltage tolerance up to 500V, and high current rating up to 9A for power supplies up to 350W. Key specifications include gate threshold voltage of 2-4V, static drain-source resistance below 1.4 ohms, and turn-on/off times as fast as 30-170 nanoseconds.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    37 views3 pages

    NTE2393 Mosfet N-Channel Enhancement Mode, High Speed Switch

    Uploaded by

    Abel Rodriguez
    The NTE2393 is an N-channel enhancement mode power MOSFET suitable for high-speed switching applications up to 500V and 9A, such as power supplies and motor controls. It has ultra-fast switching under 100kHz, high voltage tolerance up to 500V, and high current rating up to 9A for power supplies up to 350W. Key specifications include gate threshold voltage of 2-4V, static drain-source resistance below 1.4 ohms, and turn-on/off times as fast as 30-170 nanoseconds.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    NTE2393

    MOSFET
    N–Channel Enhancement Mode,
    High Speed Switch

    Description:
    The NTE2393 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive
    and very fast switching times make this device ideal for high speed switching applications. Typical
    applications include switching mode power supplies, uninterruptible power supplies, and motor
    speed control.

    Features:
    D High Voltage: 500V for Off–Line SMPS
    D High Current: 9A for up to 350W SMPS
    D Ultra Fast Switching for Operation at less than 100kHz

    Industrial Applications:
    D Switching Mode Power Supplies
    D Motor Controls

    Absolute Maximum Ratings:


    Drain–Source Voltage (VGS = 0), VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
    Drain–Gate Voltage (RGS = 20kΩ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
    Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
    Continuous Drain Current, ID
    TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9A
    TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.6A
    Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A
    Clamped Drain Inductive Current (Note 1), IDLM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A
    Total Dissipation (TC = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
    Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W/°C
    Maximum Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
    Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
    Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83°C/W
    Maximum Lead Temperature (During Soldering), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +275°C
    Note 1. Pulse width limited by safe operating area.
    Electrical Characteristics: (TC = +25°C unless otherwise specified)
    Parameter Symbol Test Conditions Min Typ Max Unit
    OFF Characteristics
    Drain–Source Breakdown Voltage V(BR)DSS ID = 250µA, VGS = 0 500 – – V
    Zero–Gate Voltage Drain Current IDSS VGS = 0, VDS = Max Rating – – 250 µA
    VGS = 0, VDS = 400V, – – 1000 µA
    TC = +125°C
    Gate–Body Leakage Current IGSS VDS = 0, VGS = ±20V – – ±100 nA
    ON Characteristics (Note 2)
    Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2 – 4 V
    Static Drain–Source On Resistance RDS(on) VGS = 10V, ID = 4.5A – – 0.7 Ω
    VGS = 10V, ID = 4.5A, – – 1.4 Ω
    TC = 100°C
    Dynamic Characteristics
    Forward Transconductance gfs VDS = 25V, ID = 4.5A 5 – – mho
    Input Capactiance Ciss VDS = 25V, VGS = 0, – 1600 1900 pf
    f = 1MHz
    Output Capacitance Coss – – 280 pf
    Reverse Transfer Capactiance Crss – – 170 pf
    Switching Characteristics
    Turn–On Time td(on) VDD = 250V, ID = 4.5A, – 30 40 ns
    Ω VI = 10V
    RI = 4.7Ω,
    Rise Time tr – 40 60 ns
    Turn–Off Delay Time td(off) – 130 170 ns
    Fall Time tf – 30 40 ns
    Source Drain Diode Characteristics
    Source–Drain Current ISD – – 9 A
    Source–Drain Current (Pulsed) ISDM Note 2 – – 36 A
    Forward ON Voltage VSD ISD = 9A, VGS = 0 – – 1.15 V
    Reverse Recovery Time trr IDS = 9A, VGS = 0, – 420 – ns
    di/dt = 100A/µs

    Note 2. Pulse width limited by safe operating area.


    Note 3. Pulsed: Pulse Duration = 300µs, Duty Cycle 1.5%
    .190 (4.82) .615 (15.62)

    .787
    (20.0)
    .591
    (15.02) .126
    (3.22)
    Dia

    .787
    (20.0)
    G D S

    .215 (5.47)

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