Optimos - T2 Power-Transistor: Product Summary

Download as pdf or txt
Download as pdf or txt
You are on page 1of 9

IPB120N10S4-03

IPI120N10S4-03, IPP120N10S4-03

OptiMOS®-T2 Power-Transistor
Product Summary

VDS 100 V

RDS(on),max (SMD version) 3.5 mW

ID 120 A
Features
• N-channel - Normal Level - Enhancement mode
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Type Package Marking

IPB120N10S4-03 PG-TO263-3-2 4N1003

IPI120N10S4-03 PG-TO262-3-1 4N1003

IPP120N10S4-03 PG-TO220-3-1 4N1003

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Continuous drain current ID T C=25°C, V GS=10V1) 120 A

T C=100°C, V GS=10V2) 120

Pulsed drain current2) I D,pulse T C=25°C 480

Avalanche energy, single pulse2) E AS I D=60A 770 mJ

Avalanche current, single pulse I AS - 120 A

Gate source voltage V GS - ±20 V

Power dissipation P tot T C=25°C 250 W

Operating and storage temperature T j, T stg - -55 ... +175 °C

Rev. 1.0 page 1 2014-06-30


IPB120N10S4-03
IPI120N10S4-03, IPP120N10S4-03

Parameter Symbol Conditions Values Unit

min. typ. max.

Thermal characteristics2)

Thermal resistance, junction - case R thJC - - - 0.6 K/W

Thermal resistance, junction -


R thJA - - - 62
ambient, leaded

SMD version, device on PCB R thJA minimal footprint - - 62

6 cm2 cooling area3) - - 40

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 100 - - V

Gate threshold voltage V GS(th) V DS=V GS, I D=180µA 2.0 2.7 3.5

Zero gate voltage drain current I DSS V DS=100V, V GS=0V - 0.1 1 µA

V DS=100V, V GS=0V,
- 10 100
T j=125°C2)

Gate-source leakage current I GSS V GS=20V, V DS=0V - - 100 nA

Drain-source on-state resistance R DS(on) V GS=10V, I D=100A - 3.4 3.9 mW

V GS=10V, I D=100A,
- 3.0 3.5
SMD version

Rev. 1.0 page 2 2014-06-30


IPB120N10S4-03
IPI120N10S4-03, IPP120N10S4-03

Parameter Symbol Conditions Values Unit


min. typ. max.

Dynamic characteristics2)

Input capacitance C iss - 7780 10120 pF


V GS=0V, V DS=25V,
Output capacitance C oss - 2460 3200
f =1MHz
Reverse transfer capacitance Crss - 150 300

Turn-on delay time t d(on) - 20 - ns

Rise time tr V DD=50V, V GS=10V, - 10 -

Turn-off delay time t d(off) I D=120A, R G=3.5W - 45 -

Fall time tf - 40 -

Gate Charge Characteristics2)

Gate to source charge Q gs - 36 47 nC

Gate to drain charge Q gd V DD=80V, I D=120A, - 21 42

Qg V GS=0 to 10V
Gate charge total - 108 140

Gate plateau voltage V plateau - 4.7 - V

Reverse Diode

Diode continous forward current2) IS - - 120 A


T C=25°C
Diode pulse current2) I S,pulse - - 480

V GS=0V, I F=100A,
Diode forward voltage V SD - 1.0 1.3 V
T j=25°C

V R=50V, I F=50A,
Reverse recovery time2) t rr - 80 - ns
di F/dt =100A/µs

Reverse recovery charge2) Q rr - 170 - nC

1)
Current is limited by bondwire; with an R thJC = 0.6K/W the chip is able to carry 186A at 25°C.
2)
Specified by design. Not subject to production test.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.

Rev. 1.0 page 3 2014-06-30


IPB120N10S4-03
IPI120N10S4-03, IPP120N10S4-03
1 Power dissipation 2 Drain current
P tot = f(T C); V GS = 10 V I D = f(T C); V GS = 10 V; SMD

300 140

120
250

100
200

80
Ptot [W]

ID [A]
150

60

100
40

50
20

0 0
0 50 100 150 200 0 50 100 150 200

TC [°C] TC [°C]

3 Safe operating area 4 Max. transient thermal impedance


I D = f(V DS); T C = 25 °C; D = 0; SMD Z thJC = f(t p)
parameter: t p parameter: D =t p/T

1000 101
1 µs

10 µs

100 µs
1 ms 100

100
0.5
ZthJC [K/W]
ID [A]

10-1
0.1

0.05
10

10-2 0.01

single pulse

1 10-3
0.1 1 10 100 10-6 10-5 10-4 10-3 10-2 10-1 100
VDS [V] tp [s]

Rev. 1.0 page 4 2014-06-30


IPB120N10S4-03
IPI120N10S4-03, IPP120N10S4-03
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C; SMD R DS(on) = f(I D); T j = 25 °C; SMD
parameter: V GS parameter: V GS

480 10
10 V 7V
5V 5.5 V 6V
6V

360 8

5.5 V

RDS(on) [mW]
ID [A]

240 6

5V

120 4
7V

10 V

0 2
0 1 2 3 4 5 0 120 240 360 480
VDS [V] ID [A]

7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance


I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 100 A; V GS = 10 V; SMD
parameter: T j

480 7
-55 °C

25 °C

175 °C 6
360

5
RDS(on) [mW]
ID [A]

240

120
3

0
3 4 5 6 7 2
-60 -20 20 60 100 140 180
VGS [V]
Tj [°C]

Rev. 1.0 page 5 2014-06-30


IPB120N10S4-03
IPI120N10S4-03, IPP120N10S4-03
9 Typ. gate threshold voltage 10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz
parameter: I D

4 104
Ciss

3.5
Coss

103

C [pF]
3

1800 µA
VGS(th) [V]

2.5

180 µA

Crss
2 102

1.5

1 101
-60 -20 20 60 100 140 180 0 5 10 15 20 25 30

Tj [°C] VDS [V]

11 Typical forward diode characteristicis 12 Avalanche characteristics


I F = f(VSD) I A S= f(t AV)
parameter: T j parameter: Tj(start)

103 1000

102 100

25 °C
IAV [A]
IF [A]

100 °C

175
175 °C
°C 25 °C

150 °C
101 10

100 1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1 10 100 1000
VSD [V] tAV [µs]

Rev. 1.0 page 6 2014-06-30


IPB120N10S4-03
IPI120N10S4-03, IPP120N10S4-03
13 Avalanche energy 14 Drain-source breakdown voltage
E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA
parameter: I D

2000 110

108

1500 106
30 A

104

VBR(DSS) [V]
EAS [mJ]

1000 102

100
60 A

500 98

120 A
96

0 94
25 75 125 175 -55 -15 25 65 105 145

Tj [°C] Tj [°C]

15 Typ. gate charge 16 Gate charge waveforms


V GS = f(Q gate); I D = 120 A pulsed
parameter: V DD

10
V GS
20 V
9
Qg
80 V
8

6
VGS [V]

4
V g s(th)

2
Q g (th) Q sw Q gate
1

Q gs Q gd
0
0 20 40 60 80 100 120
Qgate [nC]

Rev. 1.0 page 7 2014-06-30


IPB120N10S4-03
IPI120N10S4-03, IPP120N10S4-03

Published by
Infineon Technologies AG
81726 Munich, Germany

© Infineon Technologies AG 2014


All Rights Reserved.

Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.

Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).

Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Rev. 1.0 page 8 2014-06-30


IPB120N10S4-03
IPI120N10S4-03, IPP120N10S4-03
Revision History

Version Date Changes

Revision 1.0 30.06.2014 Data Sheet Revision 1.0

Rev. 1.0 page 9 2014-06-30

You might also like