Optimos - T2 Power-Transistor: Product Summary
Optimos - T2 Power-Transistor: Product Summary
Optimos - T2 Power-Transistor: Product Summary
IPI120N10S4-03, IPP120N10S4-03
OptiMOS®-T2 Power-Transistor
Product Summary
VDS 100 V
ID 120 A
Features
• N-channel - Normal Level - Enhancement mode
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
• AEC Q101 qualified
Thermal characteristics2)
Static characteristics
Gate threshold voltage V GS(th) V DS=V GS, I D=180µA 2.0 2.7 3.5
V DS=100V, V GS=0V,
- 10 100
T j=125°C2)
V GS=10V, I D=100A,
- 3.0 3.5
SMD version
Dynamic characteristics2)
Fall time tf - 40 -
Qg V GS=0 to 10V
Gate charge total - 108 140
Reverse Diode
V GS=0V, I F=100A,
Diode forward voltage V SD - 1.0 1.3 V
T j=25°C
V R=50V, I F=50A,
Reverse recovery time2) t rr - 80 - ns
di F/dt =100A/µs
1)
Current is limited by bondwire; with an R thJC = 0.6K/W the chip is able to carry 186A at 25°C.
2)
Specified by design. Not subject to production test.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
300 140
120
250
100
200
80
Ptot [W]
ID [A]
150
60
100
40
50
20
0 0
0 50 100 150 200 0 50 100 150 200
TC [°C] TC [°C]
1000 101
1 µs
10 µs
100 µs
1 ms 100
100
0.5
ZthJC [K/W]
ID [A]
10-1
0.1
0.05
10
10-2 0.01
single pulse
1 10-3
0.1 1 10 100 10-6 10-5 10-4 10-3 10-2 10-1 100
VDS [V] tp [s]
480 10
10 V 7V
5V 5.5 V 6V
6V
360 8
5.5 V
RDS(on) [mW]
ID [A]
240 6
5V
120 4
7V
10 V
0 2
0 1 2 3 4 5 0 120 240 360 480
VDS [V] ID [A]
480 7
-55 °C
25 °C
175 °C 6
360
5
RDS(on) [mW]
ID [A]
240
120
3
0
3 4 5 6 7 2
-60 -20 20 60 100 140 180
VGS [V]
Tj [°C]
4 104
Ciss
3.5
Coss
103
C [pF]
3
1800 µA
VGS(th) [V]
2.5
180 µA
Crss
2 102
1.5
1 101
-60 -20 20 60 100 140 180 0 5 10 15 20 25 30
103 1000
102 100
25 °C
IAV [A]
IF [A]
100 °C
175
175 °C
°C 25 °C
150 °C
101 10
100 1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1 10 100 1000
VSD [V] tAV [µs]
2000 110
108
1500 106
30 A
104
VBR(DSS) [V]
EAS [mJ]
1000 102
100
60 A
500 98
120 A
96
0 94
25 75 125 175 -55 -15 25 65 105 145
Tj [°C] Tj [°C]
10
V GS
20 V
9
Qg
80 V
8
6
VGS [V]
4
V g s(th)
2
Q g (th) Q sw Q gate
1
Q gs Q gd
0
0 20 40 60 80 100 120
Qgate [nC]
Published by
Infineon Technologies AG
81726 Munich, Germany
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
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express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
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If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.