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    6.012 Microelectronic Devices and Circuits Spring 2005

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    dan g
    This document contains a 3-part quiz for the MIT course 6.012 Microelectronic Devices and Circuits from Spring 2005. The quiz covers topics related to pn-junction diodes, MOS capacitors, and MOS transistors. General guidelines are provided for taking the quiz, including time limits, materials allowed, showing work, and units. Formulas for fundamental constants are also listed.

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    © All Rights Reserved
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    6.012 Microelectronic Devices and Circuits Spring 2005

    Uploaded by

    dan g
    39 views10 pages
    This document contains a 3-part quiz for the MIT course 6.012 Microelectronic Devices and Circuits from Spring 2005. The quiz covers topics related to pn-junction diodes, MOS capacitors, and MOS transistors. General guidelines are provided for taking the quiz, including time limits, materials allowed, showing work, and units. Formulas for fundamental constants are also listed.

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    MIT6_012S09_ex01_quiz01_05

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    This document contains a 3-part quiz for the MIT course 6.012 Microelectronic Devices and Circuits from Spring 2005. The quiz covers topics related to pn-junction diodes, MOS capacitors, and MOS transistors. General guidelines are provided for taking the quiz, including time limits, materials allowed, showing work, and units. Formulas for fundamental constants are also listed.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    39 views10 pages

    6.012 Microelectronic Devices and Circuits Spring 2005

    Uploaded by

    dan g
    This document contains a 3-part quiz for the MIT course 6.012 Microelectronic Devices and Circuits from Spring 2005. The quiz covers topics related to pn-junction diodes, MOS capacitors, and MOS transistors. General guidelines are provided for taking the quiz, including time limits, materials allowed, showing work, and units. Formulas for fundamental constants are also listed.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 10

    6.

    012 Microelectronic Devices and Circuits

    Spring 2005

    _____________________________________________________________

    March 9, 2005
    Quiz #1

    Problem #points

    NAME___________________________________ 1___________

    RECITATION TIME___________________________ 2___________

    3___________

    Total______________

    General guidelines (please read carefully before starting):

    • Make sure to write your name on the space provided above.


    • Open book: you can use any material you wish. But no computers.
    • All answers should be given in the space provided. Please do not turn in any
    extra material.
    • You have 120 minutes to complete the quiz.
    • Make reasonable approximations and state them, i.e. low-level injection, extrinsic
    semiconductor, quasi-neutrality, etc.
    • Partial credit will be given for setting up problems without calculations. NO credit
    will be given for answers without reasons.
    • Use the symbols utilized in class for the various physical parameters, i.e. Na, τ, ε,
    etc.
    • Pay attention to problems in which numerical answers are expected. An
    algebraic answer will not accrue full points. Every numerical answer must have
    the proper units next to it. Points will be subtracted for answers without units or
    with wrong units. In situations with a defined axis, the sign of the result is also
    part of the answer.

    Unless otherwise stated, use:

    q = 1.6 X 10-19 C

    kT/q = 25 mV at room temperature

    ni = 1010 cm-3 for silicon at room temperature

    εsi = 10-12 F/cm εox = 3.45X10-13 F/cm

    1
    1. (30 points)
    Consider two pn-junction diodes that have identical uniform doping profiles, but differ in
    substrate – one is made of silicon, and one is made of a silicon-germanium alloy (SiGe).
    Assume the intrinsic carrier concentration for SiGe at room temperature is
    approximately 1013 cm-3 and εSiGe = 1.5 x 10-12 F/cm

    Si SiGe

    p n p n

    Na = 1018 cm-3 Nd = 1015 cm-3 Na = 1018 cm-3 Nd = 1015 cm-3

    a) Calculate the built in potential for both the silicon and SiGe diodes.

    2
    b) Calculate the ratio of the depletion width on the n-side of the two diodes xno in
    thermal equilibrium. [i.e. xno(Si)/ xno(SiGe)]

    c) Calculate the ratio of the electric fields at the metallurgical junction of the two
    diodes in thermal equilibrium. [i.e. Eo(Si)/Eo(SiGe)]

    3
    2. (35 Points)
    An n+ polysilicon gate (Nd > 1020 cm-3) MOS capacitor with p-type Si body has a
    capacitance-voltage plot shown below. The maximum capacitance per unit area
    Cmax = 1.7 x 10-7 F/cm2, while the minimum capacitance per unit area
    Cmin = 6.2 x 10-8 F/cm2. Assume φn+ = 0.55 V.

    Cmax

    Cmin
    VGB
    0 0.8V 3.8V

    a) What region of operation is the device in for VGB = 3.8V?

    4
    b) For the device in part (a), derive an expression for the depletion region width xd
    at VGB = 3.8V, in terms of Cmin and Cmax and fundamental parameters (e.g. q, εox,
    εs, etc.)

    c) For the device in part (a), if the magnitude of the gate charge |QG| = 6.74 x 10-7
    C/cm2, at VGB = 3.8V, derive an expression for the doping Na, in terms of Cmin,
    Cmax and other fundamental parameters.

    5
    d) Calculate Na from part (c) assuming |QG| = 6.74 x 10-7 C/cm2 and the other
    parameters given in (a) above:

    6
    3. (35 points)
    You are given an MOS transistor with the device parameters shown below.

    ID W = 10µm
    + VDS
    - COX = 10-7 F/cm2
    µn = 200 cm2/V-s
    3V +
    - VTn = 1V

    A drain-to-source voltage is applied resulting in the electric field at the source


    Ey (0) = -3.75 x 103 V/cm and at the drain Ey(L) = -7.5 x103 V/cm
    a) Calculate ID .

    7
    b) Calculate the VDS applied.

    8
    c) Calculate the channel length L of this device.

    d) What region of operation is the transistor biased? (Circle one and explain.)
    Cutoff Triode Saturation

    9
    MIT OpenCourseWare
    http://ocw.mit.edu

    6.012 Microelectronic Devices and Circuits


    Spring 2009

    For information about citing these materials or our Terms of Use, visit: http://ocw.mit.edu/terms.

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