Finfet

Finfet and Fabrication
process
What is Finfet??
➢ The important characteristic of FinFET is that the conducting channel is

wrapped by a thin Si “fin’ , which forms the body of the device.
➢ FinFET describe a nonplanar, double-gate transistor built on an SOI
substrate.
➢ The thickness of the fin determines the effective channel length of the
device.
➢ In terms of its structure, it typically has a vertical fin on a substrate
which runs between a larger drain and source area.
What is short channel effect
➢ short-channel effects occur in MOSFETs in which the channel length
is comparable to the depletion-layer widths of the source and drain
junctions.
➢ These effects include,
★ drain-induced barrier lowering,

★ velocity saturation,
★ And hot carrier degradation.
Why Finfet???
➔ With technology scaling towards 14nm and beyond,it becomes
extremely difficult for conventional planar Field Effect Transistors (FETs)
to suppress a short channel effect (SCE).
➔ FinFET technology is used to overcome those issues.
Mosfet issues:
➢ Leakage currents is the primary barrier for scaling.

➢ Vt Variations.
➢ More gate capacitance.
Mosfet vs Finfet
➢ Leakage can be suppressed by using

Thin body.
➢ Currents can be controlled by two gates.
➢ The main principle behind both the
structures is a thin body, so the gate
capacitance is closer to whole channel.
Structure of Finfet
➢ The gate is wrapped around the channel providing

excellent control from three sides of the channel.
➢ The body is very thin. So, there is no leakage path
which is far from the gate.
➢ The gate can effectively control the leakage.
Fabrication process
➢ Lightly doped substrate with hard

Mask and SiGe for cap
Layer.
➢ Deposite hard mask on top of substrate.
Spacer formation
➢ Deposition of SiGe hard mask layer.
➢ Using self aligned double patterning

(SADP) spacer are formed.
Etching
➢ Etch the spacers into hard mask
➢ Using hard mask, etch the pattern into

Substrate and formed a silicon fins.
➢ Remove the hard mask using
etching.
➢ SiN is on top of fins.
➢ If keep the SiN on top, we can
Used as double gate finfet
(DG finfet).
➢ If remove the SiN , we can used as
Tri-Gate finfet.
Oxide deposition
➢ Fill the trenches with oxide.
➢ Oxide deposition is isolated fins from each other.
➢ To reduce the leakage currents , The gate electrode is wrapped around the channel.
CMP:
➢ Using CMP planarization is done.
Formation of fins
➢ Etch this oxide back,

How deep you etch defines the
Height of finfet device.
➢ Width of the device will defined at
patterning.
Another process:
Replacement of fin
➢ Here SiN is thick.
➢ Using self aligned double patterning
(SADP) spacers are formed.
Etching
➢ Etch those spacer into hard mask.

➢ Etch the pattern into SiN using
Hard mask.
➢ Etch the silicon nitride into substrate.
Oxidation
➢ Remove the hard mask
➢ Fill the trenches with oxide.
➢ After CMP process oxide will be
Planarized.
.
➢ Remove the silicon nitride from

Spacer.
➢ Fill the silicon in trenches
.
➢ Etch back the oxide i.e, sio2
➢ Height of the fin determine by
how we etch back.
➢ Width is determine the mold
Which is filled with silicon.
➢ If we want to change the material
Of fin, replacement of fin process
Is easy.
Finfet process challenges
➢ Due to constant potential surface, Electric field at corner is more compare to

sides walls.
➢ Performance of device will become bad due vt variations at corners and side
walls.
To avoid corner effect
Due to nitrate layer at top,
corner effect can be avoided.

Advantages of Finfet over Mosfet
➢ Lower leakage currents.
➢ Lower gate capacitance.
➢ Suppressed short channel effects.
➢ Ability to operate with a lower supply voltage.
➢ Faster switching speed. (comes from lower input capacitance and
higher dynamic current density)
➢ Lower power consumption (comes from lower parasitic capacitance
and better on/off characteristics).
References
● https://www.halbleiter.org/en/fundamentals/construction-of-a-fi
nfet/
● https://www.youtube.com/watch?v=lL5A4DblL3E&index=8&list=P
LpIaPbuZ0EL-38IJxB8pK7uP_Is6UIJ_D
● https://www.youtube.com/watch?v=Jctk0DI7YP8

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Finfet and Fabrication

➢ The important characteristic of FinFET is that the conducting channel is

★ drain-induced barrier lowering,

➢ Leakage currents is the primary barrier for scaling.

➢ Leakage can be suppressed by using

➢ The gate is wrapped around the channel providing

➢ Lightly doped substrate with hard

➢ Deposition of SiGe hard mask layer.

➢ Using self aligned double patterning

➢ Etch the spacers into hard mask

➢ Using hard mask, etch the pattern into

➢ Etch this oxide back,

➢ Etch those spacer into hard mask.

➢ Remove the silicon nitride from

➢ Due to constant potential surface, Electric field at corner is more compare to

Due to nitrate layer at top,

corner effect can be avoided.

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