74LVC2T45 74LVCH2T45: 1. General Description

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74LVC2T45; 74LVCH2T45

Dual supply translating transceiver; 3-state


Rev. 8 — 29 March 2013 Product data sheet

1. General description
The 74LVC2T45; 74LVCH2T45 are dual bit, dual supply translating transceivers with
3-state outputs that enable bidirectional level translation. They feature two 2-bits
input-output ports (nA and nB), a direction control input (DIR) and dual supply pins (VCC(A)
and VCC(B)). Both VCC(A) and VCC(B) can be supplied at any voltage between 1.2 V and
5.5 V making the device suitable for translating between any of the low voltage nodes
(1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V and 5.0 V). Pins nA and DIR are referenced to VCC(A) and
pins nB are referenced to VCC(B). A HIGH on DIR allows transmission from nA to nB and a
LOW on DIR allows transmission from nB to nA.

The devices are fully specified for partial power-down applications using IOFF. The IOFF
circuitry disables the output, preventing any damaging backflow current through the
device when it is powered down. In suspend mode when either VCC(A) or VCC(B) are at
GND level, both A port and B port are in the high-impedance OFF-state.

Active bus hold circuitry in the 74LVCH2T45 holds unused or floating data inputs at a valid
logic level.

2. Features and benefits


 Wide supply voltage range:
 VCC(A): 1.2 V to 5.5 V
 VCC(B): 1.2 V to 5.5 V
 High noise immunity
 Complies with JEDEC standards:
 JESD8-7 (1.2 V to 1.95 V)
 JESD8-5 (1.8 V to 2.7 V)
 JESD8C (2.7 V to 3.6 V)
 JESD36 (4.5 V to 5.5 V)
 ESD protection:
 HBM JESD22-A114F Class 3A exceeds 4000 V
 MM JESD22-A115-A exceeds 200 V
 CDM JESD22-C101E exceeds 1000 V
 Maximum data rates:
 420 Mbps (3.3 V to 5.0 V translation)
 210 Mbps (translate to 3.3 V))
 140 Mbps (translate to 2.5 V)
 75 Mbps (translate to 1.8 V)
 60 Mbps (translate to 1.5 V)
NXP Semiconductors 74LVC2T45; 74LVCH2T45
Dual supply translating transceiver; 3-state

 Suspend mode
 Latch-up performance exceeds 100 mA per JESD 78 Class II
 24 mA output drive (VCC = 3.0 V)
 Inputs accept voltages up to 5.5 V
 Low power consumption: 16 A maximum ICC
 IOFF circuitry provides partial Power-down mode operation
 Multiple package options
 Specified from 40 C to +85 C and 40 C to +125 C

3. Ordering information
Table 1. Ordering information
Type number Package
Temperature range Name Description Version
74LVC2T45DC 40 C to +125 C VSSOP8 plastic very thin shrink small outline package; 8 leads; SOT765-1
74LVCH2T45DC body width 2.3 mm

74LVC2T45GT 40 C to +125 C XSON8 plastic extremely thin small outline package; no leads; SOT833-1
74LVCH2T45GT 8 terminals; body 1  1.95  0.5 mm

74LVC2T45GF 40 C to +125 C XSON8 extremely thin small outline package; no leads; SOT1089
74LVCH2T45GF 8 terminals; body 1.35  1  0.5 mm

74LVC2T45GD 40 C to +125 C XSON8 plastic extremely thin small outline package; no leads; SOT996-2
74LVCH2T45GD 8 terminals; body 3  2  0.5 mm

74LVC2T45GM 40 C to +125 C XQFN8 plastic, extremely thin quad flat package; no leads; SOT902-2
74LVCH2T45GM 8 terminals; body 1.6  1.6  0.5 mm

74LVC2T45GN 40 C to +125 C XSON8 extremely thin small outline package; no leads; SOT1116
74LVCH2T45GN 8 terminals; body 1.2  1.0  0.35 mm

74LVC2T45GS 40 C to +125 C XSON8 extremely thin small outline package; no leads; SOT1203
74LVCH2T45GS 8 terminals; body 1.35  1.0  0.35 mm

4. Marking
Table 2. Marking
Type number Marking code[1]
74LVC2T45DC V45
74LVCH2T45DC X45
74LVC2T45GT V45
74LVCH2T45GT X45
74LVC2T45GF V5
74LVCH2T45GF X5
74LVC2T45GD V45
74LVCH2T45GD X45
74LVC2T45GM V45
74LVCH2T45GM X45

74LVC_LVCH2T45 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.

Product data sheet Rev. 8 — 29 March 2013 2 of 36


NXP Semiconductors 74LVC2T45; 74LVCH2T45
Dual supply translating transceiver; 3-state

Table 2. Marking …continued


Type number Marking code[1]
74LVC2T45GN V5
74LVCH2T45GN X5
74LVC2T45GS V5
74LVCH2T45GS X5

[1] The pin 1 indicator is located on the lower left corner of the device, below the marking code.

5. Functional diagram

5
DIR
DIR
2
1A
1A
7
1B
1B
3
2A
2A
6
2B
2B
VCC(A) VCC(B)
VCC(A) VCC(B)
001aag577 001aag578

Fig 1. Logic symbol Fig 2. Logic diagram

6. Pinning information

6.1 Pinning

74LVC2T45
74LVCH2T45

VCC(A) 1 8 VCC(B)

1A 2 7 1B
74LVC2T45
74LVCH2T45
2A 3 6 2B
VCC(A) 1 8 VCC(B)
1A 2 7 1B
GND 4 5 DIR
2A 3 6 2B
GND 4 5 DIR 001aai905

001aai904 Transparent top view

Fig 3. Pin configuration SOT765-1 Fig 4. Pin configuration SOT833-1, SOT1089,


SOT1116 and SOT1203

74LVC_LVCH2T45 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.

Product data sheet Rev. 8 — 29 March 2013 3 of 36


NXP Semiconductors 74LVC2T45; 74LVCH2T45
Dual supply translating transceiver; 3-state

74LVC2T45
74LVCH2T45

VCC(B)
terminal 1
index area

74LVC2T45

8
1B 1 7 VCC(A)
74LVCH2T45

VCC(A) 1 8 VCC(B)
2B 2 6 1A
1A 2 7 1B

2A 3 6 2B DIR 3 5 2A

4
GND 4 5 DIR

GND
001aai906
001aaj617

Transparent top view Transparent top view

Fig 5. Pin configuration SOT996-2 Fig 6. Pin configuration SOT902-2

6.2 Pin description


Table 3. Pin description
Symbol Pin Description
SOT765-1, SOT833-1, SOT1089, SOT902-2
SOT996-2, SOT1116 and SOT1203
VCC(A) 1 7 supply voltage A (port A and DIR)
1A 2 6 data input or output
2A 3 5 data input or output
GND 4 4 ground (0 V)
DIR 5 3 direction control
2B 6 2 data input or output
1B 7 1 data input or output
VCC(B) 8 8 supply voltage B (port B)

7. Functional description
Table 4. Function table[1]
Supply voltage Input Input/output[2]
VCC(A), VCC(B) DIR nA nB
1.2 V to 5.5 V L nA = nB input
1.2 V to 5.5 V H input nB = nA
GND[3] X Z Z

[1] H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state.
[2] The input circuit of the data I/O is always active.
[3] When either VCC(A) or VCC(B) is at GND level, the device goes into suspend mode.

74LVC_LVCH2T45 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.

Product data sheet Rev. 8 — 29 March 2013 4 of 36


NXP Semiconductors 74LVC2T45; 74LVCH2T45
Dual supply translating transceiver; 3-state

8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Max Unit
VCC(A) supply voltage A 0.5 +6.5 V
VCC(B) supply voltage B 0.5 +6.5 V
IIK input clamping current VI < 0 V 50 - mA
VI input voltage [1] 0.5 +6.5 V
IOK output clamping current VO < 0 V 50 - mA
VO output voltage Active mode [1][2][3] 0.5 VCCO + 0.5 V
Suspend or 3-state mode [1] 0.5 +6.5 V
IO output current VO = 0 V to VCCO [2] - 50 mA
ICC supply current ICC(A) or ICC(B) - 100 mA
IGND ground current 100 - mA
Tstg storage temperature 65 +150 C
Ptot total power dissipation Tamb = 40 C to +125 C [4] - 250 mW

[1] The minimum input voltage ratings and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] VCCO is the supply voltage associated with the output port.
[3] VCCO + 0.5 V should not exceed 6.5 V.
[4] For VSSOP8 packages: above 110 C the value of Ptot derates linearly with 8.0 mW/K.
For XSON8 and XQFN8 packages: above 118 C the value of Ptot derates linearly with 7.8 mW/K.

9. Recommended operating conditions


Table 6. Recommended operating conditions
Symbol Parameter Conditions Min Max Unit
VCC(A) supply voltage A 1.2 5.5 V
VCC(B) supply voltage B 1.2 5.5 V
VI input voltage 0 5.5 V
VO output voltage Active mode [1] 0 VCCO V
Suspend or 3-state mode 0 5.5 V
Tamb ambient temperature 40 +125 C
t/V input transition rise and fall rate VCCI = 1.2 V [2] - 20 ns/V
VCCI = 1.4 V to 1.95 V - 20 ns/V
VCCI = 2.3 V to 2.7 V - 20 ns/V
VCCI = 3 V to 3.6 V - 10 ns/V
VCCI = 4.5 V to 5.5 V - 5 ns/V

[1] VCCO is the supply voltage associated with the output port.
[2] VCCI is the supply voltage associated with the input port.

74LVC_LVCH2T45 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.

Product data sheet Rev. 8 — 29 March 2013 5 of 36


NXP Semiconductors 74LVC2T45; 74LVCH2T45
Dual supply translating transceiver; 3-state

10. Static characteristics


Table 7. Typical static characteristics at Tamb = 25 C
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Typ Max Unit
VOH HIGH-level output voltage VI = VIH or VIL
IO = 3 mA; VCCO = 1.2 V [1] - 1.09 - V
VOL LOW-level output voltage VI = VIH or VIL
IO = 3 mA; VCCO = 1.2 V [1] - 0.07 - V
II input leakage current DIR input; VI = 0 V to 5.5 V; [2] - - 1 A
VCCI = 1.2 V to 5.5 V
IBHL bus hold LOW current A or B port; VI = 0.42 V; VCCI = 1.2 V [2] - 19 - A
IBHH bus hold HIGH current A or B port; VI = 0.78 V; VCCI = 1.2 V [2] - 19 - A
IBHLO bus hold LOW overdrive A or B port; VCCI = 1.2 V [2][3] - 19 - A
current
IBHHO bus hold HIGH overdrive A or B port; VCCI = 1.2 V [2][3] - 19 - A
current
IOZ OFF-state output current A or B port; VO = 0 V or VCCO; [1] - - 1 A
VCCO = 1.2 V to 5.5 V
IOFF power-off leakage current A port; VI or VO = 0 V to 5.5 V; - - 1 A
VCC(A) = 0 V; VCC(B) = 1.2 V to 5.5 V
B port; VI or VO = 0 V to 5.5 V; - - 1 A
VCC(B) = 0 V; VCC(A) = 1.2 V to 5.5 V
CI input capacitance DIR input; VI = 0 V or 3.3 V; - 2.2 - pF
VCC(A) = VCC(B) = 3.3 V
CI/O input/output capacitance A and B port; suspend mode; - 6.0 - pF
VO = 3.3 V or 0 V; VCC(A) = VCC(B) = 3.3 V

[1] VCCO is the supply voltage associated with the output port.
[2] VCCI is the supply voltage associated with the data input port.
[3] To guarantee the node switches, an external driver must source/sink at least IBHLO/IBHHO when the input is in the range VIL to VIH.

74LVC_LVCH2T45 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.

Product data sheet Rev. 8 — 29 March 2013 6 of 36


NXP Semiconductors 74LVC2T45; 74LVCH2T45
Dual supply translating transceiver; 3-state

Table 8. Static characteristics


At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Max Min Max
VIH HIGH-level data input [1]

input voltage VCCI = 1.2 V 0.8VCCI - 0.8VCCI - V


VCCI = 1.4 V to 1.95 V 0.65VCCI - 0.65VCCI - V
VCCI = 2.3 V to 2.7 V 1.7 - 1.7 - V
VCCI = 3.0 V to 3.6 V 2.0 - 2.0 - V
VCCI = 4.5 V to 5.5 V 0.7VCCI - 0.7VCCI - V
DIR input
VCCI = 1.2 V 0.8VCC(A) - 0.8VCC(A) - V
VCCI = 1.4 V to 1.95 V 0.65VCC(A) - 0.65VCC(A) - V
VCCI = 2.3 V to 2.7 V 1.7 - 1.7 - V
VCCI = 3.0 V to 3.6 V 2.0 - 2.0 - V
VCCI = 4.5 V to 5.5 V 0.7VCC(A) - 0.7VCC(A) - V
VIL LOW-level data input [1]

input voltage VCCI = 1.2 V - 0.2VCCI - 0.2VCCI V


VCCI = 1.4 V to 1.95 V - 0.35VCCI - 0.35VCCI V
VCCI = 2.3 V to 2.7 V - 0.7 - 0.7 V
VCCI = 3.0 V to 3.6 V - 0.8 - 0.8 V
VCCI = 4.5 V to 5.5 V - 0.3VCCI - 0.3VCCI V
DIR input
VCCI = 1.2 V - 0.2VCC(A) - 0.2VCC(A) V
VCCI = 1.4 V to 1.95 V - 0.35VCC(A) - 0.35VCC(A) V
VCCI = 2.3 V to 2.7 V - 0.7 - 0.7 V
VCCI = 3.0 V to 3.6 V - 0.8 - 0.8 V
VCCI = 4.5 V to 5.5 V - 0.3VCC(A) - 0.3VCC(A) V
VOH HIGH-level VI = VIH
output voltage IO = 100 A; [2] VCCO  0.1 - VCCO  0.1 - V
VCCO = 1.2 V to 4.5 V
IO = 6 mA; VCCO = 1.4 V 1.0 - 1.0 - V
IO = 8 mA; VCCO = 1.65 V 1.2 - 1.2 - V
IO = 12 mA; VCCO = 2.3 V 1.9 - 1.9 - V
IO = 24 mA; VCCO = 3.0 V 2.4 - 2.4 - V
IO = 32 mA; VCCO = 4.5 V 3.8 - 3.8 - V

74LVC_LVCH2T45 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.

Product data sheet Rev. 8 — 29 March 2013 7 of 36


NXP Semiconductors 74LVC2T45; 74LVCH2T45
Dual supply translating transceiver; 3-state

Table 8. Static characteristics …continued


At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Max Min Max
VOL LOW-level VI = VIL [2]

output voltage IO = 100 A; - 0.1 - 0.1 V


VCCO = 1.2 V to 4.5 V
IO = 6 mA; VCCO = 1.4 V - 0.3 - 0.3 V
IO = 8 mA; VCCO = 1.65 V - 0.45 - 0.45 V
IO = 12 mA; VCCO = 2.3 V - 0.3 - 0.3 V
IO = 24 mA; VCCO = 3.0 V - 0.55 - 0.55 V
IO = 32 mA; VCCO = 4.5 V - 0.55 - 0.55 V
II input leakage DIR input; VI = 0 V to 5.5 V; - 2 - 10 A
current VCCI = 1.2 V to 5.5 V
IBHL bus hold LOW A or B port [1]

current VI = 0.49 V; VCCI = 1.4 V 15 - 10 - A


VI = 0.58 V; VCCI = 1.65 V 25 - 20 - A
VI = 0.70 V; VCCI = 2.3 V 45 - 45 - A
VI = 0.80 V; VCCI = 3.0 V 100 - 80 - A
VI = 1.35 V; VCCI = 4.5 V 100 - 100 - A
IBHH bus hold HIGH A or B port [1]

current VI = 0.91 V; VCCI = 1.4 V 15 - 10 - A


VI = 1.07 V; VCCI = 1.65 V 25 - 20 - A
VI = 1.60 V; VCCI = 2.3 V 45 - 45 - A
VI = 2.00 V; VCCI = 3.0 V 100 - 80 - A
VI = 3.15 V; VCCI = 4.5 V 100 - 100 - A
IBHLO bus hold LOW A or B port [1][3]

overdrive VCCI = 1.6 V 125 - 125 - A


current
VCCI = 1.95 V 200 - 200 - A
VCCI = 2.7 V 300 - 300 - A
VCCI = 3.6 V 500 - 500 - A
VCCI = 5.5 V 900 - 900 - A
IBHHO bus hold HIGH A or B port [1][3]

overdrive VCCI = 1.6 V 125 - 125 - A


current
VCCI = 1.95 V 200 - 200 - A
VCCI = 2.7 V 300 - 300 - A
VCCI = 3.6 V 500 - 500 - A
VCCI = 5.5 V 900 - 900 - A
IOZ OFF-state A or B port; VO = 0 V or VCCO; [2] - 2 - 10 A
output current VCCO = 1.2 V to 5.5 V

74LVC_LVCH2T45 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.

Product data sheet Rev. 8 — 29 March 2013 8 of 36


NXP Semiconductors 74LVC2T45; 74LVCH2T45
Dual supply translating transceiver; 3-state

Table 8. Static characteristics …continued


At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Max Min Max
IOFF power-off A port; VI or VO = 0 V to 5.5 V; - 2 - 10 A
leakage VCC(A) = 0 V;
current VCC(B) = 1.2 V to 5.5 V
B port; VI or VO = 0 V to 5.5 V; - 2 - 10 A
VCC(B) = 0 V;
VCC(A) = 1.2 V to 5.5 V
ICC supply current A port; VI = 0 V or VCCI; IO = 0 A [1]

VCC(A), VCC(B) = 1.2 V to 5.5 V - 8 - 8 A


VCC(A), VCC(B) = 1.65 V to 5.5 V - 3 - 3 A
VCC(A) = 5.5 V; VCC(B) = 0 V - 2 - 2 A
VCC(A) = 0 V; VCC(B) = 5.5 V 2 - 2 - A
B port; VI = 0 V or VCCI; IO = 0 A
VCC(A), VCC(B) = 1.2 V to 5.5 V - 8 - 8 A
VCC(A), VCC(B) = 1.65 V to 5.5 V - 3 - 3 A
VCC(B) = 0 V; VCC(A) = 5.5 V 2 - 2 - A
VCC(B) = 5.5 V; VCC(A) = 0 V - 2 - 2 A
A plus B port (ICC(A) + ICC(B));
IO = 0 A; VI = 0 V or VCCI
VCC(A), VCC(B) = 1.2 V to 5.5 V - 16 - 16 A
VCC(A), VCC(B) = 1.65 V to 5.5 V - 4 - 4 A
ICC additional per input;
supply current VCC(A), VCC(B) = 3.0 V to 5.5 V
A port; A port at VCC(A)  0.6 V; [4] - 50 - 75 A
DIR at VCC(A); B port = open
DIR input; DIR at VCC(A)  0.6 V; - 50 - 75 A
A port at VCC(A) or GND;
B port = open
B port; B port at VCC(B)  0.6 V; [4] - 50 - 75 A
DIR at GND; A port = open

[1] VCCI is the supply voltage associated with the data input port.
[2] VCCO is the supply voltage associated with the output port.
[3] To guarantee the node switches, an external driver must source/sink at least IBHLO/IBHHO when the input is in the range VIL to VIH.
[4] For non bus hold parts only (74LVC2T45).

74LVC_LVCH2T45 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.

Product data sheet Rev. 8 — 29 March 2013 9 of 36


NXP Semiconductors 74LVC2T45; 74LVCH2T45
Dual supply translating transceiver; 3-state

11. Dynamic characteristics


Table 9. Typical dynamic characteristics at VCC(A) = 1.2 V and Tamb = 25 C
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9; for waveforms see Figure 7 and Figure 8.
Symbol Parameter Conditions VCC(B) Unit
1.2 V 1.5 V 1.8 V 2.5 V 3.3 V 5.0 V
tPLH LOW to HIGH A to B 10.6 8.1 7.0 5.8 5.3 5.1 ns
propagation delay B to A 10.6 9.5 9.0 8.5 8.3 8.2 ns
tPHL HIGH to LOW A to B 10.1 7.1 6.0 5.3 5.2 5.4 ns
propagation delay B to A 10.1 8.6 8.1 7.8 7.6 7.6 ns
tPHZ HIGH to OFF-state DIR to A 9.4 9.4 9.4 9.4 9.4 9.4 ns
propagation delay DIR to B 12.0 9.4 9.0 7.8 8.4 7.9 ns
tPLZ LOW to OFF-state DIR to A 7.1 7.1 7.1 7.1 7.1 7.1 ns
propagation delay DIR to B 9.5 7.8 7.7 6.9 7.6 7.0 ns
tPZH OFF-state to HIGH DIR to A [1] 20.1 17.3 16.7 15.4 15.9 15.2 ns
propagation delay DIR to B [1] 17.7 15.2 14.1 12.9 12.4 12.2 ns
tPZL OFF-state to LOW DIR to A [1] 22.1 18.0 17.1 15.6 16.0 15.5 ns
propagation delay DIR to B [1] 19.5 16.5 15.4 14.7 14.6 14.8 ns

[1] tPZH and tPZL are calculated values using the formula shown in Section 14.4 “Enable times”.

Table 10. Typical dynamic characteristics at VCC(B) = 1.2 V and Tamb = 25 C


Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9; for waveforms see Figure 7 and Figure 8.
Symbol Parameter Conditions VCC(A) Unit
1.2 V 1.5 V 1.8 V 2.5 V 3.3 V 5.0 V
tPLH LOW to HIGH A to B 10.6 9.5 9.0 8.5 8.3 8.2 ns
propagation delay B to A 10.6 8.1 7.0 5.8 5.3 5.1 ns
tPHL HIGH to LOW A to B 10.1 8.6 8.1 7.8 7.6 7.6 ns
propagation delay B to A 10.1 7.1 6.0 5.3 5.2 5.4 ns
tPHZ HIGH to OFF-state DIR to A 9.4 6.5 5.7 4.1 4.1 3.0 ns
propagation delay DIR to B 12.0 6.1 5.4 4.6 4.3 4.0 ns
tPLZ LOW to OFF-state DIR to A 7.1 4.9 4.5 3.2 3.4 2.5 ns
propagation delay DIR to B 9.5 7.3 6.6 5.9 5.7 5.6 ns
tPZH OFF-state to HIGH DIR to A [1] 20.1 15.4 13.6 11.7 11.0 10.7 ns
propagation delay DIR to B [1] 17.7 14.4 13.5 11.7 11.7 10.7 ns
tPZL OFF-state to LOW DIR to A [1] 22.1 13.2 11.4 9.9 9.5 9.4 ns
propagation delay DIR to B [1] 19.5 15.1 13.8 11.9 11.7 10.6 ns

[1] tPZH and tPZL are calculated values using the formula shown in Section 14.4 “Enable times”.

74LVC_LVCH2T45 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.

Product data sheet Rev. 8 — 29 March 2013 10 of 36


NXP Semiconductors 74LVC2T45; 74LVCH2T45
Dual supply translating transceiver; 3-state

Table 11. Typical power dissipation capacitance at VCC(A) = VCC(B) and Tamb = 25 C [1][2]
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions VCC(A) and VCC(B) Unit
1.8 V 2.5 V 3.3 V 5.0 V
CPD power dissipation A port: (direction A to B); 2 3 3 4 pF
capacitance B port: (direction B to A)
A port: (direction B to A); 15 16 16 18 pF
B port: (direction A to B)

[1] CPD is used to determine the dynamic power dissipation (PD in W).
PD = CPD  VCC2  fi  N + (CL  VCC2  fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
(CL  VCC2  fo) = sum of the outputs.
[2] fi = 10 MHz; VI = GND to VCC; tr = tf = 1 ns; CL = 0 pF; RL =  .

Table 12. Dynamic characteristics for temperature range 40 C to +85 C


Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9; for wave forms see Figure 7 and Figure 8.
Symbol Parameter Conditions VCC(B) Unit
1.5 V  0.1 V 1.8 V  0.15 V 2.5 V  0.2 V 3.3 V  0.3 V 5.0 V  0.5 V
Min Max Min Max Min Max Min Max Min Max
VCC(A) = 1.4 V to 1.6 V
tPLH LOW to HIGH A to B 2.8 21.3 2.4 17.6 2.0 13.5 1.7 11.8 1.6 10.5 ns
propagation delay B to A 2.8 21.3 2.6 19.1 2.3 14.9 2.3 12.4 2.2 12.0 ns
tPHL HIGH to LOW A to B 2.6 19.3 2.2 15.3 1.8 11.8 1.7 10.9 1.7 10.8 ns
propagation delay B to A 2.6 19.3 2.4 17.3 2.3 13.2 2.2 11.3 2.3 11.0 ns
tPHZ HIGH to OFF-state DIR to A 3.0 18.7 3.0 18.7 3.0 18.7 3.0 18.7 3.0 18.7 ns
propagation delay DIR to B 3.5 24.8 3.5 23.6 3.0 11.0 3.3 11.3 2.8 10.3 ns
tPLZ LOW to OFF-state DIR to A 2.4 11.4 2.4 11.4 2.4 11.4 2.4 11.4 2.4 11.4 ns
propagation delay DIR to B 2.8 18.3 3.0 17.2 2.5 9.4 3.0 10.1 2.5 9.4 ns
tPZH OFF-state to HIGH DIR to A [1] - 39.6 - 36.3 - 24.3 - 22.5 - 21.4 ns
propagation delay DIR to B [1] - 32.7 - 29.0 - 24.9 - 23.2 - 21.9 ns
tPZL OFF-state to LOW DIR to A [1] - 44.1 - 40.9 - 24.2 - 22.6 - 21.3 ns
propagation delay DIR to B [1] - 38.0 - 34.0 - 30.5 - 29.6 - 29.5 ns
VCC(A) = 1.65 V to 1.95 V
tPLH LOW to HIGH A to B 2.6 19.1 2.2 17.7 2.2 9.3 1.7 7.2 1.4 6.8 ns
propagation delay B to A 2.4 17.6 2.2 17.7 2.3 16.0 2.1 15.5 1.9 15.1 ns
tPHL HIGH to LOW A to B 2.4 17.3 2.0 14.3 1.6 8.5 1.8 7.1 1.7 7.0 ns
propagation delay B to A 2.2 15.3 2.0 14.3 2.1 12.9 2.0 12.6 1.8 12.2 ns
tPHZ HIGH to OFF-state DIR to A 2.9 17.1 2.9 17.1 2.9 17.1 2.9 17.1 2.9 17.1 ns
propagation delay DIR to B 3.2 24.1 3.2 21.9 2.7 11.5 3.0 10.3 2.5 8.2 ns
tPLZ LOW to OFF-state DIR to A 2.4 10.5 2.4 10.5 2.4 10.5 2.4 10.5 2.4 10.5 ns
propagation delay DIR to B 2.5 17.6 2.6 16.0 2.2 9.2 2.7 8.4 2.4 7.1 ns

74LVC_LVCH2T45 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.

Product data sheet Rev. 8 — 29 March 2013 11 of 36


NXP Semiconductors 74LVC2T45; 74LVCH2T45
Dual supply translating transceiver; 3-state

Table 12. Dynamic characteristics for temperature range 40 C to +85 C …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9; for wave forms see Figure 7 and Figure 8.
Symbol Parameter Conditions VCC(B) Unit
1.5 V  0.1 V 1.8 V  0.15 V 2.5 V  0.2 V 3.3 V  0.3 V 5.0 V  0.5 V
Min Max Min Max Min Max Min Max Min Max
tPZH OFF-state to HIGH DIR to A [1] - 35.2 - 33.7 - 25.2 - 23.9 - 22.2 ns
propagation delay DIR to B [1] - 29.6 - 28.2 - 19.8 - 17.7 - 17.3 ns
tPZL OFF-state to LOW DIR to A [1] - 39.4 - 36.2 - 24.4 - 22.9 - 20.4 ns
propagation delay DIR to B [1] - 34.4 - 31.4 - 25.6 - 24.2 - 24.1 ns
VCC(A) = 2.3 V to 2.7 V
tPLH LOW to HIGH A to B 2.3 17.9 2.3 16.0 1.5 8.5 1.3 6.2 1.1 4.8 ns
propagation delay B to A 2.0 13.5 2.2 9.3 1.5 8.5 1.4 8.0 1.0 7.5 ns
tPHL HIGH to LOW A to B 2.3 15.8 2.1 12.9 1.4 7.5 1.3 5.4 0.9 4.6 ns
propagation delay B to A 1.8 11.8 1.9 8.5 1.4 7.5 1.3 7.0 0.9 6.2 ns
tPHZ HIGH to OFF-state DIR to A 2.1 8.1 2.1 8.1 2.1 8.1 2.1 8.1 2.1 8.1 ns
propagation delay DIR to B 3.0 22.5 3.0 21.4 2.5 11.0 2.8 9.3 2.3 6.9 ns
tPLZ LOW to OFF-state DIR to A 1.7 5.8 1.7 5.8 1.7 5.8 1.7 5.8 1.7 5.8 ns
propagation delay DIR to B 2.3 14.6 2.5 13.2 2.0 9.0 2.5 8.4 1.8 5.8 ns
tPZH OFF-state to HIGH DIR to A [1] - 28.1 - 22.5 - 17.5 - 16.4 - 13.3 ns
propagation delay DIR to B [1] - 23.7 - 21.8 - 14.3 - 12.0 - 10.6 ns
tPZL OFF-state to LOW DIR to A [1] - 34.3 - 29.9 - 18.5 - 16.3 - 13.1 ns
propagation delay DIR to B [1] - 23.9 - 21.0 - 15.6 - 13.5 - 12.7 ns
VCC(A) = 3.0 V to 3.6 V
tPLH LOW to HIGH A to B 2.3 17.1 2.1 15.5 1.4 8.0 0.8 5.6 0.7 4.4 ns
propagation delay B to A 1.7 11.8 1.7 7.2 1.3 6.2 0.7 5.6 0.6 5.4 ns
tPHL HIGH to LOW A to B 2.2 15.6 2.0 12.6 1.3 7.0 0.8 5.0 0.7 4.0 ns
propagation delay B to A 1.7 10.9 1.8 7.1 1.3 5.4 0.8 5.0 0.7 4.5 ns
tPHZ HIGH to OFF-state DIR to A 2.3 7.3 2.3 7.3 2.3 7.3 2.3 7.3 2.7 7.3 ns
propagation delay DIR to B 2.9 18.0 2.9 16.5 2.3 10.1 2.7 8.6 2.2 6.3 ns
tPLZ LOW to OFF-state DIR to A 2.0 5.6 2.0 5.6 2.0 5.6 2.0 5.6 2.0 5.6 ns
propagation delay DIR to B 2.3 13.6 2.4 12.5 1.9 7.8 2.3 7.1 1.7 4.9 ns
tPZH OFF-state to HIGH DIR to A [1] - 25.4 - 19.7 - 14.0 - 12.7 - 10.3 ns
propagation delay DIR to B [1] - 22.7 - 21.1 - 13.6 - 11.2 - 10.0 ns
tPZL OFF-state to LOW DIR to A [1] - 28.9 - 23.6 - 15.5 - 13.6 - 10.8 ns
propagation delay DIR to B [1] - 22.9 - 19.9 - 14.3 - 12.3 - 11.3 ns
VCC(A) = 4.5 V to 5.5 V
tPLH LOW to HIGH A to B 2.2 16.6 1.9 15.1 1.0 7.5 0.7 5.4 0.5 3.9 ns
propagation delay B to A 1.6 10.5 1.4 6.8 1.0 4.8 0.7 4.4 0.5 3.9 ns
tPHL HIGH to LOW A to B 2.3 15.3 1.8 12.2 1.0 6.2 0.7 4.5 0.5 3.5 ns
propagation delay B to A 1.7 10.8 1.7 7.0 0.9 4.6 0.7 4.0 0.5 3.5 ns
tPHZ HIGH to OFF-state DIR to A 1.7 5.4 1.7 5.4 1.7 5.4 1.7 5.4 1.7 5.4 ns
propagation delay DIR to B 2.9 17.3 2.9 16.1 2.3 9.7 2.7 8.0 2.5 5.7 ns

74LVC_LVCH2T45 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.

Product data sheet Rev. 8 — 29 March 2013 12 of 36


NXP Semiconductors 74LVC2T45; 74LVCH2T45
Dual supply translating transceiver; 3-state

Table 12. Dynamic characteristics for temperature range 40 C to +85 C …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9; for wave forms see Figure 7 and Figure 8.
Symbol Parameter Conditions VCC(B) Unit
1.5 V  0.1 V 1.8 V  0.15 V 2.5 V  0.2 V 3.3 V  0.3 V 5.0 V  0.5 V
Min Max Min Max Min Max Min Max Min Max
tPLZ LOW to OFF-state DIR to A 1.4 3.7 1.4 3.7 1.3 3.7 1.0 3.7 0.9 3.7 ns
propagation delay DIR to B 2.3 13.1 2.4 12.1 1.9 7.4 2.3 7.0 1.8 4.5 ns
tPZH OFF-state to HIGH DIR to A [1] - 23.6 - 18.9 - 12.2 - 11.4 - 8.4 ns
propagation delay DIR to B [1] - 20.3 - 18.8 - 11.2 - 9.1 - 7.6 ns
tPZL OFF-state to LOW DIR to A [1] - 28.1 - 23.1 - 14.3 - 12.0 - 9.2 ns
propagation delay DIR to B [1] - 20.7 - 17.6 - 11.6 - 9.9 - 8.9 ns

[1] tPZH and tPZL are calculated values using the formula shown in Section 14.4 “Enable times”.

Table 13. Dynamic characteristics for temperature range 40 C to +125 C


Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9; for wave forms see Figure 7 and Figure 8.
Symbol Parameter Conditions VCC(B) Unit
1.5 V  0.1 V 1.8 V  0.15 V 2.5 V  0.2 V 3.3 V  0.3 V 5.0 V  0.5 V
Min Max Min Max Min Max Min Max Min Max
VCC(A) = 1.4 V to 1.6 V
tPLH LOW to HIGH A to B 2.5 23.5 2.1 19.4 1.8 14.9 1.5 13.0 1.4 11.6 ns
propagation delay B to A 2.5 23.5 2.3 21.1 2.0 16.4 2.0 13.7 1.9 13.2 ns
tPHL HIGH to LOW A to B 2.3 21.3 1.9 16.9 1.6 13.0 1.5 12.0 1.5 11.9 ns
propagation delay B to A 2.3 21.3 2.1 19.1 2.0 14.6 1.9 12.5 2.0 12.1 ns
tPHZ HIGH to OFF-state DIR to A 2.7 20.6 2.7 20.6 2.7 20.6 2.7 20.6 2.7 20.6 ns
propagation delay DIR to B 3.1 27.3 3.1 26.0 2.7 12.1 2.9 12.5 2.5 11.4 ns
tPLZ LOW to OFF-state DIR to A 2.1 12.6 2.1 12.6 2.1 12.6 2.1 12.6 2.1 12.6 ns
propagation delay DIR to B 2.5 20.2 2.7 19.0 2.2 10.4 2.7 11.2 2.2 10.4 ns
tPZH OFF-state to HIGH DIR to A [1] - 43.7 - 40.1 - 26.8 - 24.9 - 23.6 ns
propagation delay DIR to B [1] - 36.1 - 32.0 - 27.5 - 25.6 - 24.2 ns
tPZL OFF-state to LOW DIR to A [1] - 48.6 - 45.1 - 26.7 - 25.0 - 23.5 ns
propagation delay DIR to B [1] - 41.9 - 37.5 - 33.6 - 32.6 - 32.5 ns
VCC(A) = 1.65 V to 1.95 V
tPLH LOW to HIGH A to B 2.3 21.1 1.9 19.5 1.9 10.3 1.5 8.0 1.2 7.5 ns
propagation delay B to A 2.1 19.4 1.9 19.5 2.0 17.6 1.8 17.1 1.7 16.7 ns
tPHL HIGH to LOW A to B 2.1 19.1 1.8 15.8 1.4 9.4 1.6 7.9 1.5 7.7 ns
propagation delay B to A 1.9 16.9 1.8 15.8 1.8 14.2 1.8 13.9 1.6 13.5 ns
tPHZ HIGH to OFF-state DIR to A 2.6 18.9 2.6 18.9 2.6 18.9 2.6 18.9 2.6 18.9 ns
propagation delay DIR to B 2.8 26.6 2.8 24.1 2.4 12.7 2.7 11.4 2.2 9.1 ns
tPLZ LOW to OFF-state DIR to A 2.1 11.6 2.1 11.6 2.1 11.6 2.1 11.6 2.1 11.6 ns
propagation delay DIR to B 2.2 19.4 2.3 17.6 1.9 10.2 2.4 9.3 2.1 7.9 ns
tPZH OFF-state to HIGH DIR to A [1] - 38.8 - 37.1 - 27.8 - 26.4 - 24.6 ns
propagation delay DIR to B [1] - 32.7 - 31.1 - 21.9 - 19.6 - 19.1 ns

74LVC_LVCH2T45 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.

Product data sheet Rev. 8 — 29 March 2013 13 of 36


NXP Semiconductors 74LVC2T45; 74LVCH2T45
Dual supply translating transceiver; 3-state

Table 13. Dynamic characteristics for temperature range 40 C to +125 C …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9; for wave forms see Figure 7 and Figure 8.
Symbol Parameter Conditions VCC(B) Unit
1.5 V  0.1 V 1.8 V  0.15 V 2.5 V  0.2 V 3.3 V  0.3 V 5.0 V  0.5 V
Min Max Min Max Min Max Min Max Min Max
tPZL OFF-state to LOW DIR to A [1] - 43.5 - 39.9 - 26.9 - 25.3 - 22.6 ns
propagation delay DIR to B [1] - 38.0 - 34.7 - 28.3 - 26.8 - 26.6 ns
VCC(A) = 2.3 V to 2.7 V
tPLH LOW to HIGH A to B 2.0 19.7 2.0 17.6 1.3 9.4 1.1 6.9 0.9 5.3 ns
propagation delay B to A 1.8 14.9 1.9 10.3 1.3 9.4 1.2 8.8 0.9 8.3 ns
tPHL HIGH to LOW A to B 2.0 17.4 1.8 14.2 1.2 8.3 1.1 6.0 0.8 5.1 ns
propagation delay B to A 1.6 13.0 1.7 9.4 1.2 8.3 1.1 7.7 0.8 6.9 ns
tPHZ HIGH to OFF-state DIR to A 1.8 9.0 1.8 9.0 1.8 9.0 1.8 9.0 1.8 9.0 ns
propagation delay DIR to B 2.7 24.8 2.7 23.6 2.2 12.1 2.5 10.3 2.0 7.6 ns
tPLZ LOW to OFF-state DIR to A 1.5 6.4 1.5 6.4 1.5 6.4 1.5 6.4 1.5 6.4 ns
propagation delay DIR to B 2.0 16.1 2.2 14.6 1.8 9.9 2.2 9.3 1.6 6.4 ns
tPZH OFF-state to HIGH DIR to A [1] - 31.0 - 24.9 - 19.3 - 18.1 - 14.7 ns
propagation delay DIR to B [1] - 26.1 - 24.0 - 15.8 - 13.3 - 11.7 ns
tPZL OFF-state to LOW DIR to A [1] - 37.8 - 33.0 - 20.4 - 18.0 - 14.5 ns
propagation delay DIR to B [1] - 26.4 - 23.2 - 17.3 - 15.0 - 14.1 ns
VCC(A) = 3.0 V to 3.6 V
tPLH LOW to HIGH A to B 2.0 18.9 1.8 17.1 1.2 8.8 0.7 6.2 0.6 4.9 ns
propagation delay B to A 1.5 13.0 1.5 8.0 1.1 6.9 0.6 6.2 0.5 6.0 ns
tPHL HIGH to LOW A to B 1.9 17.2 1.8 13.9 1.1 7.7 0.7 5.5 0.6 4.4 ns
propagation delay B to A 1.5 12.0 1.6 7.9 1.1 6.0 0.7 5.5 0.6 5.0 ns
tPHZ HIGH to OFF-state DIR to A 2.0 8.1 2.0 8.1 2.0 8.1 2.0 8.1 2.4 8.1 ns
propagation delay DIR to B 2.6 19.8 2.6 18.2 2.0 11.2 2.4 9.5 1.9 7.0 ns
tPLZ LOW to OFF-state DIR to A 1.8 6.2 1.8 6.2 1.8 6.2 1.8 6.2 1.8 6.2 ns
propagation delay DIR to B 2.0 15.0 2.1 13.8 1.7 8.6 2.0 7.9 1.5 5.4 ns
tPZH OFF-state to HIGH DIR to A [1] - 28.0 - 21.8 - 15.5 - 14.1 - 11.4 ns
propagation delay DIR to B [1] - 25.1 - 23.3 - 15.0 - 12.4 - 11.1 ns
tPZL OFF-state to LOW DIR to A [1] - 31.8 - 26.1 - 17.2 - 15.0 - 12.0 ns
propagation delay DIR to B [1] - 25.3 - 22.0 - 15.8 - 13.6 - 12.5 ns
VCC(A) = 4.5 V to 5.5 V
tPLH LOW to HIGH A to B 1.9 18.3 1.7 16.7 0.9 8.3 0.6 6.0 0.4 4.3 ns
propagation delay B to A 1.4 11.6 1.2 7.5 0.9 5.3 0.6 4.9 0.4 4.3 ns
tPHL HIGH to LOW A to B 2.0 16.9 1.6 13.5 0.9 6.9 0.6 5.0 0.4 3.9 ns
propagation delay B to A 1.5 11.9 1.5 7.7 0.8 5.1 0.6 4.4 0.4 3.9 ns
tPHZ HIGH to OFF-state DIR to A 1.5 6.0 1.5 6.0 1.5 6.0 1.5 6.0 1.5 6.0 ns
propagation delay DIR to B 2.6 19.1 2.6 17.8 2.0 10.7 2.4 8.8 2.2 6.3 ns
tPLZ LOW to OFF-state DIR to A 1.2 4.1 1.2 4.1 1.1 4.1 0.9 4.1 0.8 4.1 ns
propagation delay DIR to B 2.0 14.5 2.1 13.4 1.7 8.2 2.0 7.7 1.6 5.0 ns

74LVC_LVCH2T45 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.

Product data sheet Rev. 8 — 29 March 2013 14 of 36


NXP Semiconductors 74LVC2T45; 74LVCH2T45
Dual supply translating transceiver; 3-state

Table 13. Dynamic characteristics for temperature range 40 C to +125 C …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9; for wave forms see Figure 7 and Figure 8.
Symbol Parameter Conditions VCC(B) Unit
1.5 V  0.1 V 1.8 V  0.15 V 2.5 V  0.2 V 3.3 V  0.3 V 5.0 V  0.5 V
Min Max Min Max Min Max Min Max Min Max
tPZH OFF-state to HIGH DIR to A [1] - 26.1 - 20.9 - 13.5 - 12.6 - 9.3 ns
propagation delay DIR to B [1] - 22.4 - 20.8 - 12.4 - 10.1 - 8.4 ns
tPZL OFF-state to LOW DIR to A [1] - 31.0 - 25.5 - 15.8 - 13.2 - 10.2 ns
propagation delay DIR to B [1] - 22.9 - 19.5 - 12.9 - 11.0 - 9.9 ns

[1] tPZH and tPZL are calculated values using the formula shown in Section 14.4 “Enable times”.

12. Waveforms

VI

nA, nB input VM

GND
tPHL tPLH
VOH

nB, nA output VM

VOL 001aaj644

Measurement points are given in Table 14.


VOL and VOH are typical output voltage levels that occur with the output load.
Fig 7. The data input (A, B) to output (B, A) propagation delay times

VI

DIR input VM

GND
t PLZ t PZL
VCCO
output
LOW-to-OFF VM
OFF-to-LOW VX
VOL
t PHZ t PZH
VOH
VY
output
HIGH-to-OFF VM
OFF-to-HIGH
GND
outputs outputs outputs
enabled disabled enabled

001aae968

Measurement points are given in Table 14.


VOL and VOH are typical output voltage levels that occur with the output load.
Fig 8. Enable and disable times

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Product data sheet Rev. 8 — 29 March 2013 15 of 36


NXP Semiconductors 74LVC2T45; 74LVCH2T45
Dual supply translating transceiver; 3-state

Table 14. Measurement points


Supply voltage Input[1] Output[2]
VCC(A), VCC(B) VM VM VX VY
1.2 V to 1.6 V 0.5VCCI 0.5VCCO VOL + 0.1 V VOH  0.1 V
1.65 V to 2.7 V 0.5VCCI 0.5VCCO VOL + 0.15 V VOH  0.15 V
3.0 V to 5.5 V 0.5VCCI 0.5VCCO VOL + 0.3 V VOH  0.3 V

[1] VCCI is the supply voltage associated with the data input port.
[2] VCCO is the supply voltage associated with the output port.

tW
VI
90 %
negative
pulse VM VM
10 %
0V
tf tr

tr tf
VI
90 %
positive
pulse VM VM
10 %
0V
tW

VEXT
VCC
RL
VI VO
G DUT

RT CL RL

001aae331

Test data is given in Table 15.


RL = Load resistance.
CL = Load capacitance including jig and probe capacitance.
RT = Termination resistance.
VEXT = External voltage for measuring switching times.
Fig 9. Test circuit for measuring switching times

Table 15. Test data


Supply voltage Input Load VEXT
VCC(A), VCC(B) VI[1] t/V[2] CL RL tPLH, tPHL tPZH, tPHZ tPZL, tPLZ[3]
1.2 V to 5.5 V VCCI  1.0 ns/V 15 pF 2 k open GND 2VCCO

[1] VCCI is the supply voltage associated with the data input port.
[2] dV/dt  1.0 V/ns.
[3] VCCO is the supply voltage associated with the output port.

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Product data sheet Rev. 8 — 29 March 2013 16 of 36


NXP Semiconductors 74LVC2T45; 74LVCH2T45
Dual supply translating transceiver; 3-state

13. Typical propagation delay characteristics

001aai907 001aai908
14 14
tPHL tPLH
(ns) (ns)
12 12 (1)
(1)

10 10
(2)

8 (2) 8 (3)
(3)
(4) (4)
6 6 (5)
(5) (6)
(6)
4 4

2 2

0 0
0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35
CL (pF) CL (pF)

a. HIGH to LOW propagation delay (A to B) b. LOW to HIGH propagation delay (A to B)

001aai909 001aai910
14 14
tPHL tPLH
(ns) (ns)
12 12 (1)
(1) (2)
(3)
10 (2) 10 (4)
(3)
(5)
8 (4) 8
(5) (6)
(6)
6 6

4 4

2 2

0 0
0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35
CL (pF) CL (pF)

c. HIGH to LOW propagation delay (B to A) d. LOW to HIGH propagation delay (B to A)


(1) VCC(B) = 1.2 V.
(2) VCC(B) = 1.5 V.
(3) VCC(B) = 1.8 V.
(4) VCC(B) = 2.5 V.
(5) VCC(B) = 3.3 V.
(6) VCC(B) = 5.0 V.
Fig 10. Typical propagation delay versus load capacitance; Tamb = 25 C; VCC(A) = 1.2 V

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Product data sheet Rev. 8 — 29 March 2013 17 of 36


NXP Semiconductors 74LVC2T45; 74LVCH2T45
Dual supply translating transceiver; 3-state

001aai911 001aai912
14 14
tPHL tPLH
(ns) (ns)
12 12
(1)

10 (1) 10

8 8 (2)
(2)
(3)
6 (3) 6
(4)
(4) (5)
4 4 (6)
(5)
2 (6) 2

0 0
0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35
CL (pF) CL (pF)

a. HIGH to LOW propagation delay (A to B) b. LOW to HIGH propagation delay (A to B)

001aai913 001aai914
14 14
tPHL tPLH
(ns) (ns)
12 12

10 10
(1)

8 (1) 8 (2)
(2) (3)
(3) (4)
6 (4) 6
(5)
(5) (6)
4 (6) 4

2 2

0 0
0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35
CL (pF) CL (pF)

c. HIGH to LOW propagation delay (B to A) d. LOW to HIGH propagation delay (B to A)


(1) VCC(B) = 1.2 V.
(2) VCC(B) = 1.5 V.
(3) VCC(B) = 1.8 V.
(4) VCC(B) = 2.5 V.
(5) VCC(B) = 3.3 V.
(6) VCC(B) = 5.0 V.
Fig 11. Typical propagation delay versus load capacitance; Tamb = 25 C; VCC(A) = 1.5 V

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Product data sheet Rev. 8 — 29 March 2013 18 of 36


NXP Semiconductors 74LVC2T45; 74LVCH2T45
Dual supply translating transceiver; 3-state

001aai915 001aai916
14 14
tPHL tPLH
(ns) (ns)
12 12

(1)
10 10
(1)

8 8
(2)
(2)
6 6 (3)
(3)
(4)
4 (4) 4 (5)
(5) (6)
(6)
2 2

0 0
0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35
CL (pF) CL (pF)

a. HIGH to LOW propagation delay (A to B) b. LOW to HIGH propagation delay (A to B)

001aai917 001aai918
14 14
tPHL tPLH
(ns) (ns)
12 12

10 10

8 8 (1)
(1) (2)
6 (2) 6 (3)
(3) (4)
(4) (5)
4 (5) 4 (6)
(6)

2 2

0 0
0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35
CL (pF) CL (pF)

c. HIGH to LOW propagation delay (B to A) d. LOW to HIGH propagation delay (B to A)


(1) VCC(B) = 1.2 V.
(2) VCC(B) = 1.5 V.
(3) VCC(B) = 1.8 V.
(4) VCC(B) = 2.5 V.
(5) VCC(B) = 3.3 V.
(6) VCC(B) = 5.0 V.
Fig 12. Typical propagation delay versus load capacitance; Tamb = 25 C; VCC(A) = 1.8 V

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Product data sheet Rev. 8 — 29 March 2013 19 of 36


NXP Semiconductors 74LVC2T45; 74LVCH2T45
Dual supply translating transceiver; 3-state

001aai919 001aai920
14 14
tPHL tPLH
(ns) (ns)
12 12

10 10 (1)
(1)
8 8
(2)
6 (2) 6
(3)
(3)
4 (4) 4 (4)
(5) (5)
(6) (6)
2 2

0 0
0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35
CL (pF) CL (pF)

a. HIGH to LOW propagation delay (A to B) b. LOW to HIGH propagation delay (A to B)

001aai921 001aai922
14 14
tPHL tPLH
(ns) (ns)
12 12

10 10

8 8

(1)
6 (1) 6
(2)
(2) (3)
4 (3) 4 (4)
(4)
(5)
(5)
(6)
2 (6) 2

0 0
0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35
CL (pF) CL (pF)

c. HIGH to LOW propagation delay (B to A) d. LOW to HIGH propagation delay (B to A)


(1) VCC(B) = 1.2 V.
(2) VCC(B) = 1.5 V.
(3) VCC(B) = 1.8 V.
(4) VCC(B) = 2.5 V.
(5) VCC(B) = 3.3 V.
(6) VCC(B) = 5.0 V.
Fig 13. Typical propagation delay versus load capacitance; Tamb = 25 C; VCC(A) = 2.5 V

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Product data sheet Rev. 8 — 29 March 2013 20 of 36


NXP Semiconductors 74LVC2T45; 74LVCH2T45
Dual supply translating transceiver; 3-state

001aai923 001aai924
14 14
tPHL tPLH
(ns) (ns)
12 12

10 10 (1)
(1)
8 8

(2)
6 (2) 6
(3)
(3)
4 (4) 4 (4)
(5) (5)
(6) (6)
2 2

0 0
0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35
CL (pF) CL (pF)

a. HIGH to LOW propagation delay (A to B) b. LOW to HIGH propagation delay (A to B)

001aai925 001aai926
14 14
tPHL tPLH
(ns) (ns)
12 12

10 10

8 8

6 (1) 6 (1)

(2) (2)
4 (3) 4 (3)
(4) (4)
(5) (5)
2 (6) 2 (6)

0 0
0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35
CL (pF) CL (pF)

c. HIGH to LOW propagation delay (B to A) d. LOW to HIGH propagation delay (B to A)


(1) VCC(B) = 1.2 V.
(2) VCC(B) = 1.5 V.
(3) VCC(B) = 1.8 V.
(4) VCC(B) = 2.5 V.
(5) VCC(B) = 3.3 V.
(6) VCC(B) = 5.0 V.
Fig 14. Typical propagation delay versus load capacitance; Tamb = 25 C; VCC(A) = 3.3 V

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Product data sheet Rev. 8 — 29 March 2013 21 of 36


NXP Semiconductors 74LVC2T45; 74LVCH2T45
Dual supply translating transceiver; 3-state

001aai927 001aai928
14 14
tPHL tPLH
(ns) (ns)
12 12

10 10 (1)
(1)
8 8

(2)
6 (2) 6
(3) (3)

4 (4) 4
(4)
(5) (5)
(6) (6)
2 2

0 0
0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35
CL (pF) CL (pF)

a. HIGH to LOW propagation delay (A to B) b. LOW to HIGH propagation delay (A to B)

001aai929 001aai930
14 14
tPHL tPLH
(ns) (ns)
12 12

10 10

8 8

6 (1) 6
(1)

(2) (2)
4 4
(3) (3)
(4) (4)
2 (5) 2 (5)
(6) (6)

0 0
0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35
CL (pF) CL (pF)

c. HIGH to LOW propagation delay (B to A) d. LOW to HIGH propagation delay (B to A)


(1) VCC(B) = 1.2 V.
(2) VCC(B) = 1.5 V.
(3) VCC(B) = 1.8 V.
(4) VCC(B) = 2.5 V.
(5) VCC(B) = 3.3 V.
(6) VCC(B) = 5.0 V.
Fig 15. Typical propagation delay versus load capacitance; Tamb = 25 C; VCC(A) = 5 V

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Product data sheet Rev. 8 — 29 March 2013 22 of 36


NXP Semiconductors 74LVC2T45; 74LVCH2T45
Dual supply translating transceiver; 3-state

14. Application information

14.1 Unidirectional logic level-shifting application


The circuit given in Figure 16 is an example of the 74LVC2T45; 74LVCH2T45 being used
in a unidirectional logic level-shifting application.

VCC1 VCC2

VCC1 VCC(A) VCC(B) VCC2


1 8
1A 1B
2
74LVC2T45 7
2A 74LVCH2T45 2B
3 6

VCC1 GND DIR VCC2


4 5

system-1 system-2
001aai931

Fig 16. Unidirectional logic level-shifting application

Table 16. Description of unidirectional logic level-shifting application


Pin Name Function Description
1 VCC(A) VCC1 supply voltage of system-1 (1.2 V to 5.5 V)
2 1A OUT output level depends on VCC1 voltage
3 2A OUT output level depends on VCC1 voltage
4 GND GND device GND
5 DIR DIR the GND (LOW level) determines B port to A port direction
6 2B IN input threshold value depends on VCC2 voltage
7 1B IN input threshold value depends on VCC2 voltage
8 VCC(B) VCC2 supply voltage of system-2 (1.2 V to 5.5 V)

14.2 Bidirectional logic level-shifting application


Figure 17 shows the 74LVC2T45; 74LVCH2T45 being used in a bidirectional logic
level-shifting application. Since the device does not have an output enable pin, the system
designer should take precautions to avoid bus contention between system-1 and
system-2 when changing directions.

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Product data sheet Rev. 8 — 29 March 2013 23 of 36


NXP Semiconductors 74LVC2T45; 74LVCH2T45
Dual supply translating transceiver; 3-state

VCC1 VCC1 VCC2 VCC2

VCC(A) VCC(B)
I/O-1 PULL-UP/DOWN 1 8 PULL-UP/DOWN I/O-2
1A 1B
2
74LVC2T45 7
2A 74LVCH2T45 2B
3 6
GND DIR
4 5

DIR CTRL DIR CTRL

system-1 system-2 001aai932

Pull-up or pull-down only needed for 74LVC2T45.


Fig 17. Bidirectional logic level-shifting application

Table 17 gives a sequence that will illustrate data transmission from system-1 to system-2
and then from system-2 to system-1.

Table 17. Description of bidirectional logic level-shifting application[1]


State DIR CTRL I/O-1 I/O-2 Description
1 H output input system-1 data to system-2
2 H Z Z system-2 is getting ready to send data to system-1. I/O-1 and I/O-2
are disabled. The bus-line state depends on bus hold
3 L Z Z DIR bit is set LOW. I/O-1 and I/O-2 still are disabled. The bus-line
state depends on bus hold
4 L input output system-2 data to system-1

[1] H = HIGH voltage level;


L = LOW voltage level;
Z = high-impedance OFF-state.

14.3 Power-up considerations


The device is designed such that no special power-up sequence is required other than
GND being applied first.

Table 18. Typical total supply current (ICC(A) + ICC(B))


VCC(A) VCC(B) Unit
0V 1.8 V 2.5 V 3.3 V 5.0 V
0V 0 <1 <1 <1 <1 A
1.8 V <1 <2 <2 <2 2 A
2.5 V <1 <2 <2 <2 <2 A
3.3 V <1 <2 <2 <2 <2 A
5.0 V <1 2 <2 <2 <2 A

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Product data sheet Rev. 8 — 29 March 2013 24 of 36


NXP Semiconductors 74LVC2T45; 74LVCH2T45
Dual supply translating transceiver; 3-state

14.4 Enable times


Calculate the enable times for the 74LVC2T45; 74LVCH2T45 using the following
formulas:

• tPZH (DIR to A) = tPLZ (DIR to B) + tPLH (B to A)


• tPZL (DIR to A) = tPHZ (DIR to B) + tPHL (B to A)
• tPZH (DIR to B) = tPLZ (DIR to A) + tPLH (A to B)
• tPZL (DIR to B) = tPHZ (DIR to A) + tPHL (A to B)

In a bidirectional application, these enable times provide the maximum delay from the
time the DIR bit is switched until an output is expected. For example, if the 74LVC2T45;
74LVCH2T45 initially is transmitting from A to B, then the DIR bit is switched, the B port of
the device must be disabled before presenting it with an input. After the B port has been
disabled, an input signal applied to it appears on the corresponding A port after the
specified propagation delay.

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Product data sheet Rev. 8 — 29 March 2013 25 of 36


NXP Semiconductors 74LVC2T45; 74LVCH2T45
Dual supply translating transceiver; 3-state

15. Package outline

VSSOP8: plastic very thin shrink small outline package; 8 leads; body width 2.3 mm SOT765-1

D E A
X

y HE v M A

8 5

A2
A
A1
(A3)
pin 1 index

θ
Lp

L
1 4 detail X

e w M
bp

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)


A D(1)
UNIT A1 A2 A3 bp c E(2) e HE L Lp Q v w y Z(1) θ
max.
0.15 0.85 0.27 0.23 2.1 2.4 3.2 0.40 0.21 0.4 8°
mm 1 0.12 0.5 0.4 0.2 0.13 0.1
0.00 0.60 0.17 0.08 1.9 2.2 3.0 0.15 0.19 0.1 0°

Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

OUTLINE REFERENCES EUROPEAN


ISSUE DATE
VERSION IEC JEDEC JEITA PROJECTION

SOT765-1 MO-187 02-06-07

Fig 18. Package outline SOT765-1 (VSSOP8)

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Product data sheet Rev. 8 — 29 March 2013 26 of 36


NXP Semiconductors 74LVC2T45; 74LVCH2T45
Dual supply translating transceiver; 3-state

XSON8: plastic extremely thin small outline package; no leads; 8 terminals; body 1 x 1.95 x 0.5 mm SOT833-1

b
1 2 3 4


L (2)
L1

8 7 6 5
e1 e1 e1

8× A
(2)

A1

terminal 1
index area

0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)

UNIT A(1) A1 b D E e e1 L L1
max max
0.25 2.0 1.05 0.35 0.40
mm 0.5 0.04 0.6 0.5
0.17 1.9 0.95 0.27 0.32
Notes
1. Including plating thickness.
2. Can be visible in some manufacturing processes.

OUTLINE REFERENCES EUROPEAN


ISSUE DATE
VERSION IEC JEDEC JEITA PROJECTION

07-11-14
SOT833-1 --- MO-252 ---
07-12-07

Fig 19. Package outline SOT833-1 (XSON8)

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Product data sheet Rev. 8 — 29 March 2013 27 of 36


NXP Semiconductors 74LVC2T45; 74LVCH2T45
Dual supply translating transceiver; 3-state

XSON8: extremely thin small outline package; no leads;


8 terminals; body 1.35 x 1 x 0.5 mm SOT1089

terminal 1
index area

D A
A1

detail X

(4×)(2)
e

L
(8×)(2)

b 4 5

e1

1 8

terminal 1
index area L1 X
0 0.5 1 mm

Dimensions scale

Unit A(1) A1 b D E e e1 L L1

max 0.5 0.04 0.20 1.40 1.05 0.35 0.40


mm nom 0.15 1.35 1.00 0.55 0.35 0.30 0.35
min 0.12 1.30 0.95 0.27 0.32
Note
1. Including plating thickness.
2. Visible depending upon used manufacturing technology. sot1089_po

Outline References European


Issue date
version IEC JEDEC JEITA projection
10-04-09
SOT1089 MO-252
10-04-12

Fig 20. Package outline SOT1089 (XSON8)


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Product data sheet Rev. 8 — 29 March 2013 28 of 36


NXP Semiconductors 74LVC2T45; 74LVCH2T45
Dual supply translating transceiver; 3-state

XSON8: plastic extremely thin small outline package; no leads;


8 terminals; body 3 x 2 x 0.5 mm SOT996-2

D B A

E A A1

detail X

terminal 1
index area

e1
C
v C A B
L1 e b
w C y1 C y
1 4

L2

8 5
X

0 1 2 mm
scale

Dimensions (mm are the original dimensions)

Unit(1) A A1 b D E e e1 L L1 L2 v w y y1

max 0.05 0.35 2.1 3.1 0.5 0.15 0.6


mm nom 0.5 0.5 1.5 0.1 0.05 0.05 0.1
min 0.00 0.15 1.9 2.9 0.3 0.05 0.4
sot996-2_po

Outline References European


Issue date
version IEC JEDEC JEITA projection
07-12-21
SOT996-2
12-11-20

Fig 21. Package outline SOT996-2 (XSON8)

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Product data sheet Rev. 8 — 29 March 2013 29 of 36


NXP Semiconductors 74LVC2T45; 74LVCH2T45
Dual supply translating transceiver; 3-state

XQFN8: plastic, extremely thin quad flat package; no leads;


8 terminals; body 1.6 x 1.6 x 0.5 mm SOT902-2

D B A

terminal 1
index area

E A

A1

detail X

e
C
v C A B
b
w C y1 C y
4

3 5
e1

2 6

1 7

terminal 1 8
index area L metal area
not for soldering

L1

0 1 2 mm

Dimensions scale

Unit(1) A A1 b D E e e1 L L1 v w y y1

max 0.5 0.05 0.25 1.65 1.65 0.35 0.15


mm nom 0.20 1.60 1.60 0.55 0.5 0.30 0.10 0.1 0.05 0.05 0.05
min 0.00 0.15 1.55 1.55 0.25 0.05
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. sot902-2_po

Outline References European


Issue date
version IEC JEDEC JEITA projection
10-11-02
SOT902-2 --- MO-255 ---
11-03-31

Fig 22. Package outline SOT902-2 (XQFN8)

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Product data sheet Rev. 8 — 29 March 2013 30 of 36


NXP Semiconductors 74LVC2T45; 74LVCH2T45
Dual supply translating transceiver; 3-state

XSON8: extremely thin small outline package; no leads;


8 terminals; body 1.2 x 1.0 x 0.35 mm SOT1116

b
1 2 3 4 (4×)(2)

L1 L

8 7 6 5

e1 e1 e1

(8×)(2)
A1 A

terminal 1
index area

0 0.5 1 mm

Dimensions scale

Unit A(1) A1 b D E e e1 L L1

max 0.35 0.04 0.20 1.25 1.05 0.35 0.40


mm nom 0.15 1.20 1.00 0.55 0.3 0.30 0.35
min 0.12 1.15 0.95 0.27 0.32
Note
1. Including plating thickness.
2. Visible depending upon used manufacturing technology. sot1116_po

Outline References European


Issue date
version IEC JEDEC JEITA projection
10-04-02
SOT1116
10-04-07

Fig 23. Package outline SOT1116 (XSON8)

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Product data sheet Rev. 8 — 29 March 2013 31 of 36


NXP Semiconductors 74LVC2T45; 74LVCH2T45
Dual supply translating transceiver; 3-state

XSON8: extremely thin small outline package; no leads;


8 terminals; body 1.35 x 1.0 x 0.35 mm SOT1203

b
1 2 3 4 (4×)(2)

L1 L

8 7 6 5
e1 e1 e1

(8×)(2)
A1 A

terminal 1
index area

0 0.5 1 mm

Dimensions scale

Unit A(1) A1 b D E e e1 L L1

max 0.35 0.04 0.20 1.40 1.05 0.35 0.40


mm nom 0.15 1.35 1.00 0.55 0.35 0.30 0.35
min 0.12 1.30 0.95 0.27 0.32
Note
1. Including plating thickness.
2. Visible depending upon used manufacturing technology. sot1203_po

Outline References European


Issue date
version IEC JEDEC JEITA projection
10-04-02
SOT1203
10-04-06

Fig 24. Package outline SOT1203 (XSON8)

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Product data sheet Rev. 8 — 29 March 2013 32 of 36


NXP Semiconductors 74LVC2T45; 74LVCH2T45
Dual supply translating transceiver; 3-state

16. Abbreviations
Table 19. Abbreviations
Acronym Description
CDM Charged Device Model
DUT Device Under Test
ESD ElectroStatic Discharge
HBM Human Body Model
MM Machine Model

17. Revision history


Table 20. Revision history
Document ID Release date Data sheet status Change notice Supersedes
74LVC_LVCH2T45 v.8 20130329 Product data sheet - 74LVC_LVCH2T45 v.7
Modifications: • For type numbers 74LVC2T45GD and 74LVCH2T45GD XSON8U has changed to XSON8.
74LVC_LVCH2T45 v.7 20120619 Product data sheet - 74LVC_LVCH2T45 v.6
Modifications: • For type numbers 74LVC2T45GM and 74LVCH2T45GM the SOT code has changed to
SOT902-2.
74LVC_LVCH2T45 v.6 20111209 Product data sheet - 74LVC_LVCH2T45 v.5
Modifications: • Legal pages updated.
74LVC_LVCH2T45 v.5 20110927 Product data sheet - 74LVC_LVCH2T45 v.4
74LVC_LVCH2T45 v.4 20100820 Product data sheet - 74LVC_LVCH2T45 v.3
74LVC_LVCH2T45 v.3 20100119 Product data sheet - 74LVC_LVCH2T45 v.2
74LVC_LVCH2T45 v.2 20090205 Product data sheet - 74LVC_LVCH2T45 v.1
74LVC_LVCH2T45 v.1 20081118 Product data sheet - -

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Product data sheet Rev. 8 — 29 March 2013 33 of 36


NXP Semiconductors 74LVC2T45; 74LVCH2T45
Dual supply translating transceiver; 3-state

18. Legal information

18.1 Data sheet status


Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.

18.2 Definitions malfunction of an NXP Semiconductors product can reasonably be expected


to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
Draft — The document is a draft version only. The content is still under
NXP Semiconductors products in such equipment or applications and
internal review and subject to formal approval, which may result in
therefore such inclusion and/or use is at the customer’s own risk.
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of Applications — Applications that are described herein for any of these
information included herein and shall have no liability for the consequences of products are for illustrative purposes only. NXP Semiconductors makes no
use of such information. representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended Customers are responsible for the design and operation of their applications
for quick reference only and should not be relied upon to contain detailed and and products using NXP Semiconductors products, and NXP Semiconductors
full information. For detailed and full information see the relevant full data accepts no liability for any assistance with applications or customer product
sheet, which is available on request via the local NXP Semiconductors sales design. It is customer’s sole responsibility to determine whether the NXP
office. In case of any inconsistency or conflict with the short data sheet, the Semiconductors product is suitable and fit for the customer’s applications and
full data sheet shall prevail. products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
Product specification — The information and data provided in a Product design and operating safeguards to minimize the risks associated with their
data sheet shall define the specification of the product as agreed between applications and products.
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however, NXP Semiconductors does not accept any liability related to any default,
shall an agreement be valid in which the NXP Semiconductors product is damage, costs or problem which is based on any weakness or default in the
deemed to offer functions and qualities beyond those described in the customer’s applications or products, or the application or use by customer’s
Product data sheet. third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
18.3 Disclaimers the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.

Limited warranty and liability — Information in this document is believed to Limiting values — Stress above one or more limiting values (as defined in
be accurate and reliable. However, NXP Semiconductors does not give any the Absolute Maximum Ratings System of IEC 60134) will cause permanent
representations or warranties, expressed or implied, as to the accuracy or damage to the device. Limiting values are stress ratings only and (proper)
completeness of such information and shall have no liability for the operation of the device at these or any other conditions above those given in
consequences of use of such information. the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
In no event shall NXP Semiconductors be liable for any indirect, incidental,
repeated exposure to limiting values will permanently and irreversibly affect
punitive, special or consequential damages (including - without limitation - lost
the quality and reliability of the device.
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such Terms and conditions of commercial sale — NXP Semiconductors
damages are based on tort (including negligence), warranty, breach of products are sold subject to the general terms and conditions of commercial
contract or any other legal theory. sale, as published at http://www.nxp.com/profile/terms, unless otherwise
Notwithstanding any damages that customer might incur for any reason agreed in a valid written individual agreement. In case an individual
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards agreement is concluded only the terms and conditions of the respective
customer for the products described herein shall be limited in accordance agreement shall apply. NXP Semiconductors hereby expressly objects to
with the Terms and conditions of commercial sale of NXP Semiconductors. applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without No offer to sell or license — Nothing in this document may be interpreted or
limitation specifications and product descriptions, at any time and without construed as an offer to sell products that is open for acceptance or the grant,
notice. This document supersedes and replaces all information supplied prior conveyance or implication of any license under any copyrights, patents or
to the publication hereof. other industrial or intellectual property rights.

Suitability for use — NXP Semiconductors products are not designed, Export control — This document as well as the item(s) described herein
authorized or warranted to be suitable for use in life support, life-critical or may be subject to export control regulations. Export might require a prior
safety-critical systems or equipment, nor in applications where failure or authorization from competent authorities.

74LVC_LVCH2T45 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.

Product data sheet Rev. 8 — 29 March 2013 34 of 36


NXP Semiconductors 74LVC2T45; 74LVCH2T45
Dual supply translating transceiver; 3-state

Non-automotive qualified products — Unless this data sheet expressly NXP Semiconductors’ specifications such use shall be solely at customer’s
states that this specific NXP Semiconductors product is automotive qualified, own risk, and (c) customer fully indemnifies NXP Semiconductors for any
the product is not suitable for automotive use. It is neither qualified nor tested liability, damages or failed product claims resulting from customer design and
in accordance with automotive testing or application requirements. NXP use of the product for automotive applications beyond NXP Semiconductors’
Semiconductors accepts no liability for inclusion and/or use of standard warranty and NXP Semiconductors’ product specifications.
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer 18.4 Trademarks
(a) shall use the product without NXP Semiconductors’ warranty of the
Notice: All referenced brands, product names, service names and trademarks
product for such automotive applications, use and specifications, and (b)
are the property of their respective owners.
whenever customer uses the product for automotive applications beyond

19. Contact information


For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

74LVC_LVCH2T45 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.

Product data sheet Rev. 8 — 29 March 2013 35 of 36


NXP Semiconductors 74LVC2T45; 74LVCH2T45
Dual supply translating transceiver; 3-state

20. Contents
1 General description . . . . . . . . . . . . . . . . . . . . . . 1
2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3
6 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3
6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4
7 Functional description . . . . . . . . . . . . . . . . . . . 4
8 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5
9 Recommended operating conditions. . . . . . . . 5
10 Static characteristics. . . . . . . . . . . . . . . . . . . . . 6
11 Dynamic characteristics . . . . . . . . . . . . . . . . . 10
12 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
13 Typical propagation delay characteristics . . 17
14 Application information. . . . . . . . . . . . . . . . . . 23
14.1 Unidirectional logic level-shifting application . 23
14.2 Bidirectional logic level-shifting application. . . 23
14.3 Power-up considerations . . . . . . . . . . . . . . . . 24
14.4 Enable times . . . . . . . . . . . . . . . . . . . . . . . . . . 25
15 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 26
16 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 33
17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 33
18 Legal information. . . . . . . . . . . . . . . . . . . . . . . 34
18.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 34
18.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
18.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
18.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 35
19 Contact information. . . . . . . . . . . . . . . . . . . . . 35
20 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2013. All rights reserved.


For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 29 March 2013
Document identifier: 74LVC_LVCH2T45

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