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    Session 3: Solid State Devices I MOS and Fet (A) : Wednesday, Oct. 18 P.M. To Sheraton

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    Manda Praveen Kumar
    This document summarizes presentations from a session on solid state devices: 1) Researchers observed a piezoresistive effect in MOSFETs that can be used to detect stress. Stress induces up to 10% variation in carrier mobility, changing device conductance. MOSFETs can function as sensitive, active stress transducers. 2) A model is presented to better explain the finite output conductance of MOS transistors in saturation. Accounting for increased electric fields near the drain, the model agrees well with experimental measurements over a wide range of device parameters. 3) Numerical techniques were used to calculate field distributions in saturated MOS transistors, predicting how geometry and doping influence parameters like trans

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    Session 3: Solid State Devices I MOS and Fet (A) : Wednesday, Oct. 18 P.M. To Sheraton

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    Manda Praveen Kumar
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    This document summarizes presentations from a session on solid state devices: 1) Researchers observed a piezoresistive effect in MOSFETs that can be used to detect stress. Stress induces up to 10% variation in carrier mobility, changing device conductance. MOSFETs can function as sensitive, active stress transducers. 2) A model is presented to better explain the finite output conductance of MOS transistors in saturation. Accounting for increased electric fields near the drain, the model agrees well with experimental measurements over a wide range of device parameters. 3) Numerical techniques were used to calculate field distributions in saturated MOS transistors, predicting how geometry and doping influence parameters like trans

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    This document summarizes presentations from a session on solid state devices: 1) Researchers observed a piezoresistive effect in MOSFETs that can be used to detect stress. Stress induces up to 10% variation in carrier mobility, changing device conductance. MOSFETs can function as sensitive, active stress transducers. 2) A model is presented to better explain the finite output conductance of MOS transistors in saturation. Accounting for increased electric fields near the drain, the model agrees well with experimental measurements over a wide range of device parameters. 3) Numerical techniques were used to calculate field distributions in saturated MOS transistors, predicting how geometry and doping influence parameters like trans

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    Download as PDF, TXT or read online from Scribd
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    45 views2 pages

    Session 3: Solid State Devices I MOS and Fet (A) : Wednesday, Oct. 18 P.M. To Sheraton

    Uploaded by

    Manda Praveen Kumar
    This document summarizes presentations from a session on solid state devices: 1) Researchers observed a piezoresistive effect in MOSFETs that can be used to detect stress. Stress induces up to 10% variation in carrier mobility, changing device conductance. MOSFETs can function as sensitive, active stress transducers. 2) A model is presented to better explain the finite output conductance of MOS transistors in saturation. Accounting for increased electric fields near the drain, the model agrees well with experimental measurements over a wide range of device parameters. 3) Numerical techniques were used to calculate field distributions in saturated MOS transistors, predicting how geometry and doping influence parameters like trans

    Copyright:

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    Session 3: Solid State Devices I - MOS and FET (A)

    Wednesday, Oct. 18>1967, 2: 15 p.m. to 3 : 13 p . m .


    hTorthSheraton Hall
    R. Kerr
    Chairman: D.Organizer: J. S. Logan
    3.1 PIEZORESISTIVE EFFECTIN INVERSION LAYERS ON SILICON,
    J. P. Mize and D. Colman, Texas Instruments Inc., Dallas, Texas
    The piezoresistive effect has been observed in the metal-oxide-sillcon field
    effect transistor (MOSFET). Hall measurements show that the piezoresistive
    effect in the inversion layer of the device is caused by modulation of carrier
    mobility. Stress induced variations in surface hole mobility as high as &lo%
    in p channelenhancementmodedeviceshave been observed. As the device
    parameters are afunction of carrier mobility, anychange in mobllitypro-
    duces acorresponding change in conductanceandtransconductance of the
    ‘device. Hole mobility in thedevice is found tovarylinearly with applied
    stress, The MOSFET therefore functions as a transducer, responding linearly
    to static or dynamic stress. It is also tobe noted that the device has three
    terminals and functions as an “active” transducer (it has gain). Theoutput
    impedance of the device is variable and can be designed to have a value from
    several hundred ohms to a few megohms by adjustment of device dimensions
    in the photomasking processand by adjustment of the gate voltage.The
    MOSFET transducer is therefore compatible with either high- or low-input
    impedance circuitry and can be fabricated in integrated circuit configuration.
    Piezoresistive coefficients of the transducer have been measured forde-
    vicesfabricated on the(110), 1100), and (111) silicon planes. Gauge factors
    for thedeviceshavealso been determinedand will becompared to other
    solid statetransducers. The present studydescribes
    the theory of the
    MOSFET transducer,summarizes,demonstratedapplications of the device
    (microphoneand phonograph pick-up)and proposes several novel applica-
    tions.
    3.2 CONDUCTANCEOF MOS TRANSISTORS IN SATURATION, D. Froh-
    manaBentchkowsky and A. S. Grove,Fairchild Semiconductor, Palo
    Alto, Calif.
    The finite output conductance of MOS transistors operating in the satura-
    tion region is generallyattributed to thespreading of the depletion region
    nearthedrain which results in areduction of thechannellength.Previous
    treatments 1,2 haveattemptedtocalculatetheextent of thisspreading by
    describingtheelectric field distribution using step p-n junction theory. It is
    shown in this work that the experimentally observed output conductance can
    be in grossdisagreement with such calculations.Thisdiscrepancy is due
    to the fact that, owing to the presence of the gate electrc.de, the electric field
    in the drain depletionregionis greatlyincreased.3
    A simple physicalmodelis presented which takes into accountthis in-
    crease in theelectric field. Thespreading of the depletionregion nearthe
    drainandthe correspondingreduction in channel length arecalculated on
    thebasis of thismodel. It is shown thatthe output conductance isa sensi-
    tive function of the insulator thickness under the gate as well a s of the im-
    purityconcentration in thesubstrate.
    Theoutput conductance of MOS transistors is studied experimentally on
    specialstructures in which the channellength is varied between 2.5 and
    10 p , the oxide thickness between 0.1 and 0 . 6 ,~ and the substrate impurity
    concentration between 5x 10’4 and 2 x10’6 cm-3.It is shown that the
    present model is in good agreement with measurements of the output con-
    ductance throughout the entire range of device parameters.
    When the substrate impurity concentration is low, and the channel length
    very short, the drain depletionregion canactuallyreachthesource region.
    The characteristics of such“punch-through” devicesarediscussed.
    ’H. K. J. Ihantola, “DesignTheory of a Surface Field-Effect Transistor,”
    Stanford Electronics LaboratoriesTechnicalReport No. 1661-1 (1961).
    2V. G. I(. Reddi anad C. T. Sah, “Source to DrainResistance Beyond Pinch-
    Off in MOS Transistors,”IEEETrans. on Electron Devices, ED-12, 139
    (March 19651 ,
    3A similarincrease in theelectric field in gate-controlled p-n junctions has
    been shown to lead to drastic reduction of the breakdown voltage; see A. S.

    22
    Grove, 0. Leistiko, Jr. and W. W. Hooper, “Effect of SurfaceFields on the
    Breakdown Voltage of Planar Silicon P-N Junctions,” IEEE Trans. on Elec-
    tron Devices, ED-14, 157 (March 1967).
    3.3 NUMERICAL CALCULATIONOF THEFIELD DISTRIBUTION AND
    RELATED DEVICE PARAMETERS FOR MOS TRANSISTORS IN SAT.
    URATION, J. E. Schroederand R.S. Muller,University of California,
    Berkeley, Calif.
    Numericaltechniqueshave beenused to obtain the field distribution in
    MOS transistorsundersaturatedbias conditions.The numerical solution of
    Poisson’s equation isobtained with fewersimplifying assumptions than are
    necessary to obtain ananalytic solution.Using thenumerical solution one
    can calculate the change in channel length as bias values are varied. From
    this, the changes in drain current, drain conductance, and transconductance
    in saturation can be predicted. The solutions also permit a rough calculation
    of breakdownvoltages.
    A comparison of thetheoreticalresults with measuredvalues of gm,
    gD, and ID is made for MOS transistors of varying dimensions an,d doping
    concentrations.The influence of geometryandsubstrate doping on device
    parameters in saturationis discussedin terms of the above results.Cases
    for which simplifying assumptionscan be made in thetheoreticalanalysis
    are discussed. The theoretical analysis is also compared with recent experi-
    mentalobservations of breakdown characteristicsand with scanning elec-
    tronmicroscopestudies of theextent of thespace-charge region in MCS
    transistors.
    Note:Supported in partby U. S. ArmyResearch Office, Durham,under
    Grant DA-31-1241ARO-D-385and in part by the Computer Center, University
    of California, Berkeley.
    3.4 PHOTON DETECTION IN TUNNEL-BARRIER STRUCTURES, Julius
    Cohen, General Telephone and Electronics Laboratories, Bayside, N. Y.
    The use of tunnelingina structure consisting of a semiconductor, thin
    ,dielectric layer and metal offers promise as a practical photon detector free
    of many of thelimitationsordinarily imposed by semiconductor materials.
    The basis for detection is the large increase in tunnelingprobability which
    canresult when the kinetic energy of electrons is increased by photon ab-
    sorptionin thesemiconductor.Thebarrierserves two functions: (1) it al-
    lows thosephotoelectrons a t thebarrier to tunnelthrough uninfluenced by
    trapping and recombination centers in thesemi-conductor; and ( 2 ) because
    of its high impedance, the semiconductor resistance can be made as low as
    desired. Using thin-film tunnelbarrierstructures consisting of Te-Al,03-Al,
    we have shown that a substantialincreaseis obtained in thespeed of re-
    sponse as compared with that obtained with Te alone. In arddition, although
    ordinary photoconductivity could not bedetected in one sample in theTe
    layer alone, photocurrentsweredetected when the sandwich wasoperated
    in the tunneling mode. The spectral response is largelydetermined by that
    of thesemiconductor,andthepresent deviceresponds in theinfrared. The
    similarity in thespectralresponsecurves of thetunnel-barrier device and
    Te indicatesthatthegeneration of photoelectronsis a bulk property of
    the semiconductor and is not due to surface effects or excitation of electrons
    fromtraps in theinsulator.Further,itsuggeststhat the excitedelectrons
    are thermalized in the conduction band. Thedetectivityis similar to that of
    the Te alone.
    3.5 TUNISTORS - MECHANICAL RESONATORS FOR MICROCIRCUITS,
    W. E. Newell, R. A. Wickstrom, and D. J. Page, Westinghouse Research
    Laboratories, Pittsburgh, Pa.
    A new miniature tuning deviceoperating on a flexuralresonance of a
    thin metal substrate has been demonstrated. Thedevice, known as aTunis-
    tor,uses depositedpiezoelectric films as input and output transducers,and
    can be batch fabricated by stan’dard integrated circuit techniques. Tunistors
    have been built betwen 200 and 2500Hz with Q’s between 200 and 1500 and
    voltageinsertionlosses as low as 20 dB. The possibility exists of designing
    Tunistors with near-zerotemperature coefficients of frequencyand with
    relatively great immunity to externalvibration.
    The Tunistor permits a new degree of miniaturization of stable audio fre-
    quency oscillators and high-Q filters by means of hybrid microcircuits.
    The paper will compare the Tunistor with previous miniature resonators
    and discuss thevariousparameters which determinetheimportantcharac-
    teristics.

    24

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