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    Semiconductor 2N4401SC: Technical Data

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    Fernando Guerrero
    This document provides technical data for the 2N4401SC epitaxial planar NPN transistor. It is intended for general purpose and switching applications as a complement to the 2N4403SC transistor. The document lists maximum ratings, electrical characteristics, and dimensions for the transistor. Key specifications include a collector-base voltage rating of 75V, collector current rating of 600mA, and DC current gain range of 150-250 at 10V collector-emitter voltage and 150mA collector current.

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    Semiconductor 2N4401SC: Technical Data

    Uploaded by

    Fernando Guerrero
    77 views3 pages
    This document provides technical data for the 2N4401SC epitaxial planar NPN transistor. It is intended for general purpose and switching applications as a complement to the 2N4403SC transistor. The document lists maximum ratings, electrical characteristics, and dimensions for the transistor. Key specifications include a collector-base voltage rating of 75V, collector current rating of 600mA, and DC current gain range of 150-250 at 10V collector-emitter voltage and 150mA collector current.

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    2n4401sc

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    This document provides technical data for the 2N4401SC epitaxial planar NPN transistor. It is intended for general purpose and switching applications as a complement to the 2N4403SC transistor. The document lists maximum ratings, electrical characteristics, and dimensions for the transistor. Key specifications include a collector-base voltage rating of 75V, collector current rating of 600mA, and DC current gain range of 150-250 at 10V collector-emitter voltage and 150mA collector current.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    77 views3 pages

    Semiconductor 2N4401SC: Technical Data

    Uploaded by

    Fernando Guerrero
    This document provides technical data for the 2N4401SC epitaxial planar NPN transistor. It is intended for general purpose and switching applications as a complement to the 2N4403SC transistor. The document lists maximum ratings, electrical characteristics, and dimensions for the transistor. Key specifications include a collector-base voltage rating of 75V, collector current rating of 600mA, and DC current gain range of 150-250 at 10V collector-emitter voltage and 150mA collector current.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    SEMICONDUCTOR 2N4401SC

    TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR

    GENERAL PURPOSE APPLICATION.


    SWITCHING APPLICATION.
    E
    FEATURES L B L

    ・Complementary to the 2N4403SC


    DIM MILLIMETERS
    2.90 +_ 0.1

    D
    2 A
    3
    B 1.30+0.20/-0.15

    G
    1 C 1.30 MAX
    D 0.40+0.15/-0.05
    E 2.40+0.30/-0.20
    G 1.90
    J 0.10
    K 0.00 ~ 0.10
    L 0.55
    MAXIMUM RATING (Ta=25℃) M 0.20 MIN

    N
    C

    J
    N 1.00+0.20/-0.10

    CHARACTERISTIC SYMBOL RATING UNIT

    K
    M

    Collector-Base Voltage VCBO 75 V


    1. EMITTER
    Collector-Emitter Voltage VCEO 40 V 2. BASE
    3. COLLECTOR
    Emitter-Base Voltage VEBO 6 V
    Collector Current IC 600 mA
    Collector Power Dissipation PC * 350 mW
    SOT-23(1)
    Junction Temperature Tj 150 ℃
    Storage Temperature Range Tstg -55～150 ℃

    Note : * Package Mounted On 99.5% Alumina 10×8×0.6㎜)

    Marking
    Lot No.

    Type Name
    ZUC

    2015. 5. 12 Revision No : 0 1/3


    2N4401SC

    ELECTRICAL CHARACTERISTICS (Ta=25℃)


    CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
    Collector Cut-off Current ICEX VCE=60V, VEB=-3V - - 10 nA
    Collector Cut-off Current ICBO VCB=60V, IE=0 - - 10 nA
    Emitter Cut-off Current IEBO VEB=3V, IC=0 - - 10 nA
    Collector-Base Breakdown Voltage V(BR)CBO IC=100μA, IE=0 75 - - V
    Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 40 - - V
    Emitter-Base Breakdown Voltage V(BR)EBO IE=100μA, IC=0 6.0 - - V
    DC Current Gain * hFE VCE=10V, IC=150mA 150 - 250
    Collector-Emitter Saturation Voltage * VCE(sat) IC=500mA, IB=50mA - - 1.0 V
    Base-Emitter Saturation Voltage * VBE(sat) IC=500mA, IB=50mA - - 2.0 V
    Transition Frequency fT VCE=20V, IC=20mA, f=100MHz 250 - - MHz

    * Pulse Test : Pulse Width≦300μS, Duty Cycle≦2%.

    2015. 5. 12 Revision No : 0 2/3


    2N4401SC

    2015. 5. 12 Revision No : 0 3/3

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