FAN7389 3-Phase Half-Bridge Gate-Drive IC: Features Description

FAN7389 — 3-Phase Half-Bridge Gate-Drive IC
January 2013
FAN7389
3-Phase Half-Bridge Gate-Drive IC
Features Description
 Floating Channel for Bootstrap Operation to +600 V The FAN7389 is a monolithic three-phase half-bridge
gate-drive IC designed for high-voltage, high-speed
 Typically 350 mA/650 mA Sourcing/Sinking Current
driving MOSFETs and IGBTs operating up to +600 V.
Driving Capability for All Channels
 Extended Allowable Negative VS Swing to -9.8 V for Fairchild’s high-voltage process and common-mode
Signal Propagation at VDD=VBS=15 V noise canceling technique provide stable operation of
high-side drivers under high-dv/dt noise circumstances.
 Output In-Phase with Input Signal
An advanced level-shift circuit allows high-side gate
 Over-Current Shutdown Turns off All Six Drivers driver operation up to VS = -9.8 V (typical) for VBS =15 V.
 Matched Propagation Delay for All Channels The protection functions include under-voltage lockout
 3.3 V and 5.0 V Input Logic Compatible and inverter over-current trip with an automatic fault-
clear function.
 Adjustable Fault-Clear Timing
Over-current protection that terminates all six outputs
 Built-in Advanced Input Filter can be derived from an external current-sense resistor.
 Built-in Shoot-Through Prevention Logic An open-drain fault signal is provided to indicate that an
over-current or under-voltage shutdown has occurred.
 Built-in Soft Turn-Off Function
The UVLO circuits prevent malfunction when VDD and
 Common-Mode dv/dt Noise Canceling Circuit VBS are lower than the specified threshold voltage.
 Built-in UVLO Functions for All Channels Output drivers typically source and sink 350 mA and
650 mA, respectively; which is suitable for three-phase
Applications half-bridge applications in motor drive systems.
 3-Phase Motor Inverter Driver 28-SOIC

 Air Conditioners
 Washing Machines
 General-Purpose Three-Phase Inverters
Ordering Information
Operating Packing
Part Number Package
Temperature Method
FAN7389MX1(1) 28-Lead, Small Outline Integrated Circuit Wide Body (SOIC) -40 to +125°C Tape & Reel
Note:
1. These devices passed wave soldering test by JESD22A-111.
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com

FAN7389 • Rev. 1.0.3
Typical Application Diagram
Figure 1. 3-Phase BLDC Motor Drive Application
Internal Block Diagram
Figure 2. Functional Block Diagram

FAN7389 • Rev. 1.0.3 2
Pin Configuration
Figure 3. Pin Configuration
Pin Definitions
Pin Name Description
1 VDD Logic and low-side gate driver power supply voltage
2 HIN1 Logic Input 1 for high-side gate 1 driver
5 LIN1 Logic Input 1 for low-side gate 1 driver
8 FO Fault output with open drain (indicates over-current and low-side under-voltage)
9 CS Analog input for over-current shutdown
10 EN Logic input for shutdown functionality
11 RCIN An external RC network input used to define the fault-clear delay
12 VSS Logic ground
13 COM Low-side driver return
14 LO3 Low-side gate driver 3 output
17, 21, 25 NC No connect
18 VS3 High-side driver 3 floating supply offset voltage
19 HO3 High-side driver 3 gate driver output
20 VB3 High-side driver 3 floating supply

FAN7389 • Rev. 1.0.3 3
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. TA=25°C, unless otherwise specified.
Symbol Parameter Min. Max. Unit

VS High-Side Floating Offset Voltage VB1,2,3-25.0 VB1,2,3+0.3 V
VB High-Side Floating Supply Voltage -0.3 625.0 V
VDD Low-Side and Logic-Fixed Supply Voltage -0.3 25.0 V
VHO High-Side Floating Output Voltage VHO1,2,3 VS1,2,3-0.3 VB1,2,3+0.3 V
VLO Low-Side Floating Output Voltage VLO1,2,3 -0.3 VDD+0.3 V
VIN Input Voltage (HINx, LINx, CS, and EN) -0.3 5.5 V
VFO Fault Output Voltage ( FO ) -0.3 VDD+0.3 V
PWHIN High-Side Input Pulse Width 500 ns
dVS/dt Allowable Offset Voltage Slew Rate ±50 V/ns
(2,3,4)
PD Power Dissipation 1.4 W
θJA Thermal Resistance 70 °C/W
TJ Junction Temperature 150 °C
TSTG Storage Temperature -55 150 °C
Notes:
2. Mounted on 76.2 x 114.3 x 1.6 mm PCB (FR-4 glass epoxy material).
3. Refer to the following standards:
JESD51-2: Integral circuits thermal test method environmental conditions - natural convection
JESD51-3: Low effective thermal conductivity test board for leaded surface-mount packages.
4. Do not exceed PD under any circumstances.
Recommended Operating Conditions

The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to Absolute Maximum Ratings.
Symbol Parameter Min. Max. Unit

VB1,2,3 High-Side Floating Supply Voltage VS1,2,3+10 VS1,2,3+20 V
VS1,2,3 High-Side Floating Supply Offset Voltage 6-VDD 600 V
VDD Low-Side and Logic Fixed Supply Voltage 10 20 V
VHO1,2,3 High-Side Output Voltage VS1,2,3 VB1,2,3 V
VLO1,2,3 Low-Side Output Voltage COM VDD V
VFO Fault Output Voltage ( FO ) COM VDD V
VCS Current-Sense Pin Input Voltage COM 5 V
VIN Logic Input Voltage (HIN1,2,3 and LIN1,2,3) COM 5 V
VSS Logic Ground -5 5 V
TA Ambient Temperature -40 +125 °C

FAN7389 • Rev. 1.0.3 4
Electrical Characteristics
VBIAS (VDD, VBS1,2,3) = 15.0 V and TA = 25°C unless otherwise specified. The VIN and IIN parameters are referenced to
COM and are applicable to all six channels. The VO and IO parameters are referenced to VS1,2,3 and COM and are
applicable to the respective output leads: HO1,2,3 and LO1,2,3. The VDDUV parameters are referenced to COM. The
VBSUV parameters are referenced to VS1,2,3.
Symbol Parameter Conditions Min. Typ. Max. Unit

Low-Side Power Supply Section
IQDD Quiescent VDD Supply Current VLIN1,2,3=0 V or 5 V, EN=0 V 200 μA
IPDD Operating VDD Supply Current fLIN1,2,3=20 kHz, rms Value 400 μA
VDD Supply Under-Voltage Positive-Going
VDDUV+ VDD=Sweep 7.5 8.5 9.3 V
Threshold
VDD Supply Under-Voltage Negative-Going
VDDUV- VDD=Sweep 7.0 8.0 8.7 V
Threshold
VDD Supply Under-Voltage Lockout
VDDHYS VDD=Sweep 0.5 V
Hysteresis
Bootstrapped Power Supply Section
VBS Supply Under-Voltage Positive-Going
VBSUV+ VBS1,2,3=Sweep 7.5 8.5 9.3 V
Threshold
VBS Supply Under-Voltage Negative-Going
VBSUV- VBS1,2,3=Sweep 7.0 8.0 8.7 V
Threshold
VBS Supply Under-Voltage Lockout
VBSHYS VBS1,2,3=Sweep 0.5 V
Hysteresis
ILK Offset Supply Leakage Current VB1,2,3=VS1,2,3=600 V 10 μA
IQBS Quiescent VBS Supply Current VHIN1,2,3=0V or 5 V, EN=0V 10 50 80 μA
IPBS Operating VBS Supply Current fHIN1,2,3=20 kHz, rms Value 200 420 480 μA
Gate Driver Output Section
VOH High-Level Output voltage, VBIAS-VO IO=0 mA (No Load) 100 mV
VOL Low-Level Output voltage, VO IO=0 mA (No Load) 100 mV
(5)
IO+ Output HIGH Short-Circuit Pulse Current VO=0 V, VIN=5 V with PW≤10 µs 250 350 mA
VO=15 V, VIN=0 V with
IO- Output LOW Short-Circuit Pulsed Current(5) 500 650 mA
PW≤10 µs
Allowable Negative VS Pin Voltage for HIN
VS -9.8 -7.0 V
Signal Propagation to HO
Logic Input Section
VIH Logic "1" Input Voltage HIN1,2,3, LIN1,2,3 2.5 V
VIL Logic "0" Input Voltage HIN1,2,3, LIN1,2,3 0.8 V
IIN+ Logic Input Bias Current (HO=LO=HIGH) VIN=5 V 100 μA
IIN- Logic Input Bias Current (HO=LO=LOW) VIN=0 V 2 μA
RIN Logic Input Pull-Down Resistance 50 KΩ
Enable Control Section (EN)
VEN+ Enable Positive-Going Threshold Voltage 2.5 V
VEN- Enable Negative-Going Threshold Voltage 0.8 V
IEN+ Logic Enable “1” Input Bias Current VEN=5 V (Pull-Down=150KΩ) 33 μA
IEN- Logic Enable “0” Input Bias Current VEN=0 V 2 μA
Continued on the following page…

FAN7389 • Rev. 1.0.3 5
Electrical Characteristics
VBIAS (VDD, VBS1,2,3) = 15.0 V and TA = 25°C unless otherwise specified. The VIN and IIN parameters are referenced to
COM and are applicable to all six channels. The VO and IO parameters are referenced to VS1,2,3 and COM and are
applicable to the respective output leads: HO1,2,3 and LO1,2,3. The VDDUV parameters are referenced to COM. The
VBSUV parameters are referenced to VS1,2,3.

Over-Current Protection Section
(5)
VCSTH+ Over-Current Detect Positive Threshold 400 500 600 mV
VCSTH- Over-Current Detect Negative Threshold(5) 440 mV
(5)
VCSHYS Over-Current Detect Hysteresis 60 mV
ICSIN Short-Circuit Input Current VCSIN=1 V 5 10 15 μA
ISOFT Soft Turn-Off Sink Current 25 40 55 mA
Fault Output Section
VRCINTH+ RCIN Positive-Going Threshold Voltage 3.3 V
VRCINTH- RCIN Negative-Going Threshold Voltage 2.6 V
VRCINHYS RCIN Hysteresis Voltage 0.7 V
IRCIN RCIN Internal Current Source CRCIN=2 nF 3 5 7 µA
VFOL Fault Output Low Level Voltage VCS=1 V, IFO=1.5 mA 0.2 0.5 V
RDSRCIN RCIN On Resistance IRCIN=1.5 mA 50 75 100 Ω
RDSFO Fault Output On Resistance IFO=1.5 mA 90 130 170 Ω
Note:
5. These parameters are guaranteed by design.
Dynamic Electrical Characteristics

TA=25°C, VBIAS (VDD, VBS1,2,3) = 15.0 V, VS1,2,3 = COM, CRCIN=2 nF, and CLoad = 1000 pF unless otherwise specified.

tON Turn-On Propagation Delay VLIN1,2,3=VHIN1,2,3=0 V, VS1,2,3=0 V 350 500 650 ns
tOFF Turn-Off Propagation Delay VLIN1,2,3=VHIN1,2,3=5 V, VS1,2,3=0 V 350 500 650 ns
tR Turn-On Rise Time VLIN1,2,3=VHIN1,2,3=0 V 20 50 100 ns
tF Turn-Off Fall Time VLIN1,2,3=VHIN1,2,3=5 V 10 30 80 ns
tEN Enable LOW to Output Shutdown Delay 400 500 600 ns
(6)
tCSBLT CS Pin Leading-Edge Blanking Time 200 300 400 ns
(7)
tCSFO Time from CS Triggering to FO From VCSC=1V to FO Turn-Off 630 ns
Time from CS Triggering to All Gate From VCSC=1V to Starting Gate
tCSOFF 640 ns
Outputs Turn-Off(7) Turn-Off
tFLTIN Input Filtering Time(8) (HINx, LINx, EN) 200 250 300 ns
tFLTCLR Fault-Clear Time 1.3 ms
DT Dead Time 250 300 350 ns
MDT Dead-Time Matching (All Six Channels) 50 ns
MT Delay Matching (All Six Channels) 50 ns
PM Output Pulse-Width Matching(6,9) PWIN > 1µs 50 100 ns
Notes:
6. These parameters are guaranteed by design.
7. These parameters are referenced to specified CRCIN(=2 nF), and proportional to value of CRCIN as shown in
Figure 43. It is strongly recommended that the capacitor on RCIN pin should be less than 5 nF.
8. The minimum width of the input pulse should exceed 500 ns to ensure the filtering time of the input filter is exceeded.
9. PM is defined as PWIN-PWOUT.
FAN7389 • Rev. 1.0.3 6
Typical Characteristics
650 650
600 600
550 550
tON [ns]
tOFF [ns]
500 500
450 450
400 High-Side 400 High-Side

Low-Side Low-Side
350 350
-40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120
Temperature [°C] Temperature [°C]
Figure 4. Turn-On Propagation Delay Figure 5. Turn-Off Propagation Delay

vs. Temperature vs. Temperature
100 80
90 70
80 60
70 50
tF [ns]
tR [ns]
60 40
50 30
40 20
High-Side High-Side
30 Low-Side 10
Low-Side
20 0
-40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120
Figure 6. Turn-On Rise Time vs. Temperature Figure 7. Turn-Off Fall Time vs. Temperature
600 2.0
1.8
550
tFLTCLR [ms]
1.6
tEN [ns]
500
1.4
450
1.2
400 1.0
-40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120
Figure 8. Enable LOW to Output Shutdown Delay Figure 9. Fault-Clear Time vs. Temperature
vs. Temperature

FAN7389 • Rev. 1.0.3 7
Typical Characteristics (Continued)
400 50
350 25
MDT [ns]
DT [ns]
300 0
250 -25
DT1
DT2
200 -50
-40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120
Figure 10. Dead Time vs. Temperature Figure 11.Dead-Time Matching vs. Temperature
50 -7
40
-8
30
Delay Matching [ns]
20
-9
10
VS [V]
0 -10
-10
-11
-20
-30
MTON -12
-40 MTOFF
-50 -13
-40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120
Figure 12. Delay Matching vs. Temperature Figure 13.Allowable Negative VS Voltage
vs. Temperature
400 100
350
80
300
IQBS [μA]
IQDD [μA]
60
250
200
40
150
20
100
50 0
-40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120
Figure 14. Quiescent VDD Supply Current Figure 15. Quiescent VBS Supply Current

FAN7389 • Rev. 1.0.3 8
700 700
600 600
500 500
IPBS [μA]
IPDD [μA]
400 400
300 300
200 200
100 100
-40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120
Figure 16. Operating VDD Supply Current Figure 17.Operating VBS Supply Current
9.5 9.5
9.0
9.0
8.5
VDDUV- [V]
VDDUV+ [V]
8.5 8.0
7.5
8.0
7.0
7.5 6.5
-40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120
Figure 18. VDD UVLO+ vs. Temperature Figure 19.VDD UVLO- vs. Temperature
9.5 9.0
9.0 8.5
VBSUV+ [V]
VBSUV- [V]
8.5 8.0
8.0 7.5
7.5 7.0
-40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120
Figure 20. VBS UVLO+ vs. Temperature Figure 21.VBS UVLO- vs. Temperature

FAN7389 • Rev. 1.0.3 9
100 100
High-Side High-Side
Low-Side Low-Side
80 80
VOH [mV]
VOL [mV]
60 60
40 40
20 20
0 0
-40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120
Figure 22. High-Level Output Voltage vs. Temperature Figure 23.Low-Level Output Voltage vs. Temperature
3.0 3.0
2.5
2.5
VIL [V]
VIH [V]
2.0
2.0
1.5
1.5
1.0
1.0 0.5
-40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120
Figure 24. Logic HIGH Input Voltage vs. Temperature Figure 25.Logic LOW Input Voltage vs. Temperature
160 2.0
140
1.5
IIN+ [μA]
IIN- [μA]
120
1.0
100
0.5
80
60 0.0
-40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120
Figure 26. Logic Input HIGH Bias Current Figure 27.Logic Input LOW Bias Current

FAN7389 • Rev. 1.0.3 10
100 200
80 180
REN [KΩ]
RIN [KΩ]
60 160
40 140
20 120
0 100
10 12 14 16 18 20 10 12 14 16 18 20
Supply Voltage [V] Supply Voltage [V]
Figure 28. Input Pull-Down Resistance Figure 29.Enable Pin Pull-Down Resistance
vs. Supply Voltage vs. Supply Voltage
400 100
350
80
300
IQBS [μA]
IQDD [μA]
250 60
200 40
150
20
100
50 0
10 12 14 16 18 20 10 12 14 16 18 20
Figure 30. Quiescent VDD Supply Current Figure 31.Quiescent VBS Supply Current
700 700
600 600
500 500
IPDD [μA]
IPBS [μA]
400 400
300 300
200 200
100 100
10 12 14 16 18 20 10 12 14 16 18 20
Figure 32. Operating VDD Supply Current Figure 33.Operating VBS Supply Current

FAN7389 • Rev. 1.0.3 11
Switching Time Definitions
Figure 34. Switching Time Waveform Definitions
Figure 35. Input / Output Timing Diagram
Figure 36. Detailed View of B and C Intervals During Over-Current Protection

FAN7389 • Rev. 1.0.3 12
Applications Information
1. Dead Time 2.2 Shoot-Through Protection
The shoot-through protection circuitry prevents both
Dead time is automatically inserted whenever the dead
high- and low-side switches from conducting at the
time of the external two input signals (between HINx
same time, as shown Figure 39.
and LINx signals) is shorter than internal fixed dead
times (DT1 and DT2). Otherwise, external dead times
larger than internal dead times are not modified by the
gate driver and internal dead-time waveform definition is
shown in Figure 37.
Figure 37. Internal Dead-Time Definitions
2. Protection Function
2.1 Fault Out ( FO ) and Under-Voltage Lockout
The high- and low-side drivers include under-voltage
lockout (UVLO) protection circuitry that monitors the
supply voltage for VDD and VBS independently. It can be
designed to prevent malfunction when VDD and VBS are
lower than the specified threshold voltage. Also, the
UVLO hysteresis prevents chattering during power-
supply transitions. Moreover, the fault signal ( FO ) goes
to LOW state to operate reliably during power-on
events, when the power supply (VDD) is below the
under-voltage lockout high threshold voltage for the
circuit (during t1 ~ t2). The UVLO circuit is not otherwise
activated; shown Figure 38.
Figure 39. Shoot-Through Protection

2.3 Enable Input
When the EN pin is in HIGH state, the gate driver
operates normally. When a condition occurs that should
shut down the gate driver, the EN pin should be LOW.
The enable circuitry has an input filter; the minimum
input duration is specified by tFLTIN (typically 250 ns).
Figure 38. Waveforms for Under-Voltage Lockout
Figure 40. Output Enable Timing Waveform

FAN7389 • Rev. 1.0.3 13
FAN7389 — 3-Phase Half-Bridge Gate Driver IC
2.4 Fault-Out ( FO ) and Over-Current Protection
FAN7389 provides an integrated fault output ( FO ) and
an adjustable fault-clear timer (tFLTCLR). There are two
situations that cause the gate driver to report a fault via
the FO pin. The first is an under-voltage condition of
low-side gate driver supply voltage (VDD) and the
second is when the current-sense pin (CS) recognizes a
fault. Once the fault condition occurs, the FO pin is
internally pulled to COM, the fault-clear timer is
activated, and all outputs (HO1,2,3 and LO1,2,3) of the
gate driver are turned off. The fault output stays LOW
until the fault condition has been removed and the fault-
clear timer expires. Once the fault-clear timer expires,
the voltage on the FO pin returns to pull-up voltage.
The fault-clear time (tFLTCLR) is determined by an internal
current source (IRCIN=5 μA) and an external CRCIN at the
RCIN pin, as shown in this equation:
Figure 42. RCIN and Fault-Clear Waveform Definition
C RCIN × VRCIN ,TH
t FLTCLR = [s ] (1) 2.5 Recommended RCIN
I RCIN Figure 43 shows timing of tCSOFF and tCSFO versus CRCIN.
It is strongly recommended that the capacitor on RCIN
The RDSRCIN of the MOSFET is a characteristic pin should be less than 5 nF in order to properly protect
discharge curve with respect to the external capacitor power devices in over-current situations.
CRCIN. The time constant is defined by the external
capacitor CRCIN and the RDSRCIN of the MOSFET. 1200
The output of current-sense comparator (CS_COMP) 1100

passes a noise filter, which inhibits an over-current 1000
shutdown caused by parasitic voltage spikes of VCS. 900
This corresponds to a voltage level at the comparator of 800

Time [ns]
VCSTH+ - VCSHYS= 500 mV - 60 mV =440 mV, 700

where VCSHYS=60 mV is the hysteresis of the current 600
comparator (CS_COMP) as shown in Figure 41.
500
tCSOFF
400
tCSFO
300
200
0 1 2 3 4 5 6 7 8 9 10 11 12
CRCIN [nF]
Figure 43. Timing of tCSOFF and tCSFO vs. CRCIN
Figure 41. Over-Current Protection 3. Noise Filter

3.1 Input Noise Filter
Figure 42 shows the waveform definitions of RCIN, FO
Figure 44 shows the input noise filter method, which has
and the low-side driver, which uses a soft turn-off symmetry duration between the input signal (tINPUT) and
method when an under-voltage condition of the low-side the output signal (tOUTPUT) and helps to reject noise
gate driver supply voltage (VDD) or the current-sense pin spikes and short pulses. This input filter is applied to the
(CS) recognizes a fault. Once a fault condition occurs, HINx, LINx, and EN inputs. The upper pair of waveforms
the FO pin is internally pulled to COM and all outputs (Example A) shows an input signal duration (tINPUT)
(HO1,2,3 and LO1,2,3) of the gate driver are turned off. much longer than input filter time (tFLTIN); it is
Low-side outputs decline linearly by the internal sink approximately the same duration between the input
current source (ISOFT=40 mA) for soft turn-off, as shown signal time (tINPUT) and the output signal time (tOUTPUT).
in Figure 42. The lower pair of waveforms (Example B) shows an
input signal time (tINPUT) slightly longer than input filter
time (tFLTIN); it is approximately the same duration
between input signal time (tINPUT) and the output signal
time (tOUTPUT).

FAN7389 • Rev. 1.0.3 14
Example A Figure 46 shows the characteristics of the input filters
INx tFLTIN
while receiving narrow ON and OFF pulses. If input
signal pulse duration, PWIN, is less than input filter time,
tINPUT
tFLTIN; the output pulse, PWOUT, is zero. The input signal
is rejected by input filter. Once the input signal pulse
tOUTPUT
duration, PWIN, exceeds input filter time, tFLTIN, the
output pulse durations, PWOUT, matches the input pulse
OUTx
durations, PWIN. FAN7389 input filter time, tFLTIN, is
about 250 ns for the high- and low-side outputs.
INx tFLTIN
Example B
tINPUT
tOUTPUT
Output duration is
same as input duration
OUTx
Figure 44. Input Noise Filter Definition

3.2. Short-Pulsed Input Noise Rejection Method
The input filter circuitry provides protection against
short-pulsed input signals (HINx, LINx, and EN) on the
input signal lines by applied noise signal.
If the input signal duration is less than input filter time
(tFLTIN), the output does not change states.
Example A and B of the Figure 45 show the input and
output waveforms with short-pulsed noise spikes with a
duration less than input filter time; the output does not Figure 46. Input Filter Characteristic of Narrow ON
change states.
Figure 45. Noise Rejecting Input Filter Definition

FAN7389 • Rev. 1.0.3 15
Package Dimensions
Figure 47. 28-Lead Small Outline Integrated Circuit (28-Wide Body SOIC)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/.

FAN7389 • Rev. 1.0.3 16

FAN7389 • Rev. 1.0.3 17

FAN7389 3-Phase Half-Bridge Gate-Drive IC: Features Description

Uploaded by

Copyright:

Available Formats

FAN7389 3-Phase Half-Bridge Gate-Drive IC: Features Description

Uploaded by

Document Information

Original Title

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

FAN7389 3-Phase Half-Bridge Gate-Drive IC: Features Description

Uploaded by

Copyright:

Available Formats

FAN7389 — 3-Phase Half-Bridge Gate-Drive IC

 3-Phase Motor Inverter Driver 28-SOIC

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com

Figure 1. 3-Phase BLDC Motor Drive Application

Internal Block Diagram

Figure 2. Functional Block Diagram

Figure 3. Pin Configuration

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com

Symbol Parameter Min. Max. Unit

Recommended Operating Conditions

Symbol Parameter Min. Max. Unit

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com

Symbol Parameter Conditions Min. Typ. Max. Unit

Continued on the following page…

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com

Symbol Parameter Conditions Min. Typ. Max. Unit

Dynamic Electrical Characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit

400 High-Side 400 High-Side

Figure 4. Turn-On Propagation Delay Figure 5. Turn-Off Propagation Delay

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com

Figure 34. Switching Time Waveform Definitions

Figure 35. Input / Output Timing Diagram

Figure 36. Detailed View of B and C Intervals During Over-Current Protection

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com

Figure 37. Internal Dead-Time Definitions

Figure 39. Shoot-Through Protection

Figure 38. Waveforms for Under-Voltage Lockout

Figure 40. Output Enable Timing Waveform

The output of current-sense comparator (CS_COMP) 1100

This corresponds to a voltage level at the comparator of 800

VCSTH+ - VCSHYS= 500 mV - 60 mV =440 mV, 700

Figure 43. Timing of tCSOFF and tCSFO vs. CRCIN

Figure 41. Over-Current Protection 3. Noise Filter

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com

Figure 44. Input Noise Filter Definition

Figure 45. Noise Rejecting Input Filter Definition

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com

You might also like