STD1NK60 - STD1NK60-1

STQ1HNK60R - STN1HNK60
N-CHANNEL 600V - 8Ω - 1A DPAK/TO-92/IPAK/SOT-223
SuperMESH™ MOSFET

Table 1: General Features Figure 1: Package

TYPE VDSS RDS(on) ID Pw

STD1NK60 600 V < 8.5 Ω 1A 30 W

STD1NK60-1 600 V < 8.5 Ω 1A 30 W 3
STQ1HNK60R 600 V < 8.5 Ω 0.4 A 3W 1
STN1HNK60 600 V < 8.5 Ω 0.4 A 3.3 W
■ TYPICAL RDS(on) = 8 Ω TO-92 (Ammopack) DPAK
■ EXTREMELY HIGH dv/dt CAPABILITY
■ ESD IMPROVED CAPABILITY
■ 100% AVALANCHE TESTED 2

■ NEW HIGH VOLTAGE BENCHMARK 3

■ GATE CHARGE MINIMIZED 3 2
2 1
1
SOT-223
DESCRIPTION IPAK
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to Figure 2: Internal Schematic Diagram
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demanding applications. Such series
complements ST full range of high voltage MOS-
FETs including revolutionary MDmesh™ products.

APPLICATIONS
■ LOW POWER BATTERY CHARGERS
■ SWITH MODE LOW POWER

SUPPLIES(SMPS)
■ LOW POWER, BALLAST, CFL (COMPACT

FLUORESCENT LAMPS)

Table 2: Order Codes

Part Number Marking Package Packaging
STD1NK60T4 D1NK60 DPAK TAPE & REEL
STD1NK60-1 D1NK60 IPAK TUBE
STQ1HNK60R 1HNK60R TO-92 BULK
STQ1HNK60R-AP 1HNK60R TO-92 AMMOPAK
STN1HNK60 1HNK60 SOT-223 TAPE & REEL

Rev. 2
November 2004 1/15
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60

Table 3: Absolute Maximum ratings

Symbol Parameter Value Unit
DPAK / IPAK TO-92 SOT-223
VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 600 V
VGS Gate- source Voltage ± 30 V
ID Drain Current (continuous) at TC = 25°C 1.0 0.4 0.4 A
ID Drain Current (continuous) at TC = 100°C 0.63 0.25 0.25 A
IDM (
) Drain Current (pulsed) 4 1.6 1.6 A
PTOT Total Dissipation at TC = 25°C 30 3 3.3 W
Derating Factor 0.24 0.025 0.025 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns
Tj Operating Junction Temperature
-55 to 150 °C
Tstg Storage Temperature
(
) Pulse width limited by safe operating area
(1) ISD ≤1.0A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

Table 4: Thermal Data

DPAK/IPAK TO-92 SOT-223 Unit
Rthj-case Thermal Resistance Junction-case Max 4.16 -- -- °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 100 120 37.87 (#) °C/W
Rthj-lead Thermal Resistance Junction-lead Max -- 40 -- °C/W
Tl Maximum Lead Temperature For Soldering 275 260 °C
Purpose
(#) When mounted on FR-4 board of 1 in2 , 2oz Cu, t < 10 sec

Table 5: Avalanche Characteristics

Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive 1 A
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy 25 mJ
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 6: On/Off
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source ID = 1mA, VGS = 0 600 V
Breakdown Voltage
IDSS Zero Gate Voltage VDS = Max Rating 1 µA
Drain Current (VGS = 0) VDS = Max Rating, TC = 125 °C 50 µA
IGSS Gate-body Leakage VGS = ± 30V ±100 nA
Current (VDS = 0)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.25 3 3.7 V
RDS(on) Static Drain-source On VGS = 10V, ID = 0.5 A 8 8.5 Ω
Resistance

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ELECTRICAL CHARACTERISTICS (CONTINUED)

Table 7: Dynamic
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS = 15 V, ID= 0.5 A 1 S
Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 156 pF
Coss Output Capacitance 23.5 pF
Crss Reverse Transfer Capacitance 3.8 pF
td(on) Turn-on Delay Time VDD = 300 V, ID = 0.5 A, 6.5 ns
tr Rise Time RG= 4.7 Ω, VGS = 10 V 5 ns
td(off) Turn-off Delay Time (Resistive Load see, Figure 19 ns
tr Fall Time 21) 25 ns
Qg Total Gate Charge VDD = 480V, ID = 1 A, 7 10 nC
Qgs Gate-Source Charge VGS = 10V, RG= 4.7 Ω 1.1 nC
Qgd Gate-Drain Charge (see, Figure 23) 3.7 nC

Table 8: Source Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 1 A
ISDM (2) Source-drain Current (pulsed) 4 A
VSD (1) Forward On Voltage ISD = 1.0 A, VGS = 0 1.6 V
trr Reverse Recovery Time ISD = 1.0 A, di/dt = 100 A/µs 140 ns
Qrr Reverse Recovery Charge VDD = 25V, Tj = 25°C 240 µC
IRRM Reverse Recovery Current (see test circuit, Figure 22) 3.3 A
trr Reverse Recovery Time ISD = 1.0 A, di/dt = 100 A/µs 229 ns
Qrr Reverse Recovery Charge VDD = 25V, Tj = 150°C 377 µC
IRRM Reverse Recovery Current (see test circuit, Figure 22) 3.3 A
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.

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Figure 3: .Safe Operating Area For SOT-223 Figure 6: Thermal Impedance For SOT-223

Figure 4: Safe Operating Area For DPAK/IPAK Figure 7: Thermal Impedance For DPAK/IPAK

Figure 5: Safe Operating Area For TO-92 Figure 8: Thermal Impedance For TO-92

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Figure 9: Output Characteristics Figure 12: Transfer Characteristics

Figure 10: Transconductance Figure 13: Gate Charge vs Gate-source Voltage

Figure 11: Capacitance Variations Figure 14: Static Drain-source On Resistance

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Figure 15: Normalized Gate Thereshold Volt- Figure 18: Normalized On Resistance vs Tem-
age vs Temperature perature

Figure 16: Source-Drain Forward Characteris- Figure 19: Normalized BVDSS vs Temperature
tics

Figure 17: Maximum Avalanche Energy vs Figure 20: Max Id Current vs Tc

Temperature

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Figure 21: Switching Times Test Circuit For Figure 23: Gate Charge Test Circuit
Resistive Load

Figure 22: Test Circuit For Inductive Load

Switching and Diode Recovery Times

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STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60

TO-92 MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.32 4.95 0.170 0.194
b 0.36 0.51 0.014 0.020
D 4.45 4.95 0.175 0.194
E 3.30 3.94 0.130 0.155
e 2.41 2.67 0.094 0.105
e1 1.14 1.40 0.044 0.055
L 12.70 15.49 0.50 0.610
R 2.16 2.41 0.085 0.094
S1 0.92 1.52 0.036 0.060
W 0.41 0.56 0.016 0.022
V 5° 5°

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 STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60

TO-92 AMMOPACK

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A1 4.45 4.95 0.170 0.194
T 3.30 3.94 0.130 0.155
T1 1.6 0.06
T2 2.3 0.09
d 0.41 0.56 0.016 0.022
P0 12.5 12.7 12.9 0.49 0.5 0.51
P2 5.65 6.35 7.05 0.22 0.25 0.27
F1, F2 2.44 2.54 2.94 0.09 0.1 0.11
delta H -2 2 -0.08 0.08
W 17.5 18 19 0.69 0.71 0.74
W0 5.7 6 6.3 0.22 0.23 0.24
W1 8.5 9 9.25 0.33 0.35 0.36
W2 0.5 0.02
H 18.5 20.5 0.72 0.80
H0 15.5 16 16.5 0.61 0.63 0.65
H1 25 0.98
D0 3.8 4 4.2 0.15 0.157 0.16
t 0.9 0.035
L 11 0.43
l1 3 0.11
delta P -1 1 -0.04 0.04

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SOT-223 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

A 1.80 0.071

B 0.60 0.70 0.80 0.024 0.027 0.031

B1 2.90 3.00 3.10 0.114 0.118 0.122

c 0.24 0.26 0.32 0.009 0.010 0.013

D 6.30 6.50 6.70 0.248 0.256 0.264

e 2.30 0.090

e1 4.60 0.181

E 3.30 3.50 3.70 0.130 0.138 0.146

H 6.70 7.00 7.30 0.264 0.276 0.287

V 10o 10o

A1 0.02

P008B

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TO-252 (DPAK) MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

A 2.20 2.40 0.087 0.094

A1 0.90 1.10 0.035 0.043

A2 0.03 0.23 0.001 0.009

B 0.64 0.90 0.025 0.035

B2 5.20 5.40 0.204 0.213

C 0.45 0.60 0.018 0.024

C2 0.48 0.60 0.019 0.024

D 6.00 6.20 0.236 0.244

E 6.40 6.60 0.252 0.260

G 4.40 4.60 0.173 0.181

H 9.35 10.10 0.368 0.398

L2 0.8 0.031

L4 0.60 1.00 0.024 0.039

o o o
V2 0 8 0 0o

P032P_B

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TO-251 (IPAK) MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

H
C
A

A3
C2

A1

L2 D L
B3

B6

B5
B
3
=

=
B2

G
E

2
=

=
1

L1
0068771-E

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DPAK FOOTPRINT TUBE SHIPMENT (no suffix)*

All dimensions
All dimensions are in millimeters are in millimeters

TAPE AND REEL SHIPMENT (suffix ”T4”)*

REEL MECHANICAL DATA

mm inch
DIM.
MIN. MAX. MIN. MAX.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881

BASE QTY BULK QTY

TAPE MECHANICAL DATA
2500 2500
mm inch
DIM.
MIN. MAX. MIN. MAX.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D 1.5 1.6 0.059 0.063
D1 1.5 0.059
E 1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R 40 1.574
W 15.7 16.3 0.618 0.641

* on sales type

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Table 9: Revision History

Date Revision Description of Changes

22-Nov-2004 2 Added SOT-223 Package and new stylesheet

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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics

All other names are the property of their respective owners

© 2004 STMicroelectronics - All Rights Reserved

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