STP8NK80Z - STP8NK80ZFP

STW8NK80Z
N-CHANNEL 800V - 1.3Ω - 6.2A TO-220/TO-220FP/TO-247
Zener-Protected SuperMESH™Power MOSFET

TYPE VDSS RDS(on) ID Pw

STP8NK80Z 800 V < 1.5 Ω 6.2 A 140 W
STP8NK80ZFP 800 V < 1.5 Ω 6.2 A 30 W
STW8NK80Z 800 V < 1.5 Ω 6.2 A 140 W
■ TYPICAL RDS(on) = 1.3 Ω 2
3
3
1 2
■ EXTREMELY HIGH dv/dt CAPABILITY TO-220 1

■ 100% AVALANCHE TESTED TO-220FP

■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING
REPEATIBILITY 2
3

TO-247

DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing INTERNAL SCHEMATIC DIAGRAM
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,

ADAPTORS AND PFC

■ LIGHTING

ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP8NK80Z P8NK80Z TO-220 TUBE
STP8NK80ZFP P8NK80ZFP TO-220FP TUBE
STW8NK80Z W8NK80Z TO-247 TUBE

February 2003 1/11

Free Datasheet http://www.datasheet4u.com/

STP8NK80Z - STP8NK80ZFP - STW8NK80Z

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
STP8NK80Z - STW8NK80Z STP8NK80ZFP
VDS Drain-source Voltage (VGS = 0) 800 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 800 V
VGS Gate- source Voltage ± 30 V
ID Drain Current (continuous) at TC = 25°C 6.2 6.2 (*) A
ID Drain Current (continuous) at TC = 100°C 3.9 3.9 (*) A
IDM (
) Drain Current (pulsed) 24.8 24.8 (*) A
PTOT Total Dissipation at TC = 25°C 140 30 W
Derating Factor 1.12 0.24 W/°C
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5 KΩ) 4000 V
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
VISO Insulation Withstand Voltage (DC) - 2500 V
Tj Operating Junction Temperature
-55 to 150 °C
Tstg Storage Temperature
(
) Pulse width limited by safe operating area
(1) ISD ≤6.2A, di/dt ≤200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed

THERMAL DATA
TO-220 TO-220FP TO-247
Rthj-case Thermal Resistance Junction-case Max 0.89 4.2 0.89 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 50 °C/W
Tl Maximum Lead Temperature For Soldering Purpose 300 °C

AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive 6.2 A
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy 300 mJ
(starting Tj = 25°C, ID = IAR, VDD = 50 V)

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVGSO Gate-Source Breakdown Voltage Igs=± 1 mA (Open Drain) 30 V

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.

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 STP8NK80Z - STP8NK80ZFP - STW8NK80Z

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source ID = 1 mA, VGS = 0 800 V
Breakdown Voltage
IDSS Zero Gate Voltage VDS = Max Rating 1 µA
Drain Current (VGS = 0) VDS = Max Rating, TC = 125 °C 50 µA
IGSS Gate-body Leakage VGS = ± 20V ±10 µA
Current (VDS = 0)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 100 µA 3 3.75 4.5 V
RDS(on) Static Drain-source On VGS = 10 V, ID = 3.1 A 1.3 1.5 Ω
Resistance

DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS = 15 V, ID = 3.1 A 5.2 S
Ciss Input Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 1320 pF
Coss Output Capacitance 143 pF
Crss Reverse Transfer 27 pF
Capacitance
Coss eq. (3) Equivalent Output VGS = 0, VDS = 640 V 58 pF
Capacitance
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay Time VDD = 400 V, ID = 3.1 A 17 ns
tr Rise Time RG = 4.7Ω, VGS = 10 V 30 ns
(Resistive Load see, Figure 3)
Qg Total Gate Charge VDD = 640 V, ID = 6.2 A, 46 nC
Qgs Gate-Source Charge VGS = 10 V 8.5 nC
Qgd Gate-Drain Charge 25 nC

SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(off) Turn-off Delay Time VDD = 400 V, ID = 3.1 A 48 ns
tf Fall Time RG = 4.7Ω VGS = 10 V 28 ns
(Resistive Load see, Figure 3)
tr(Voff) Off-voltage Rise Time VDD = 640V, ID = 6.2 A, 9 ns
tf Fall Time RG = 4.7Ω, VGS = 10 V 9 ns
tc Cross-over Time (Inductive Load see, Figure 5) 18 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 6.2 A
ISDM (2) Source-drain Current (pulsed) 24.8 A
VSD (1) Forward On Voltage ISD = 6.2 A, VGS = 0 1.6 V
trr Reverse Recovery Time ISD = 6.2 A, di/dt = 100 A/µs 460 ns
Qrr Reverse Recovery Charge VDD = 50 V, Tj = 150°C 2990 nC
IRRM Reverse Recovery Current (see test circuit, Figure 5) 13 A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.

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STP8NK80Z - STP8NK80ZFP - STW8NK80Z

Safe Operating Area For TO-220 Thermal Impedance For TO-220

Safe Operating Area For TO-220FP Thermal Impedance For TO-220FP

Safe Operating Area For TO-247 Thermal Impedance For TO-247

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 STP8NK80Z - STP8NK80ZFP - STW8NK80Z

Output Characteristics Transfer Characteristics

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

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STP8NK80Z - STP8NK80ZFP - STW8NK80Z

Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature

Maximum Avalanche Energy vs Temperature

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 STP8NK80Z - STP8NK80ZFP - STW8NK80Z

Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuit For Fig. 4: Gate Charge test Circuit
Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

7/11

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STP8NK80Z - STP8NK80ZFP - STW8NK80Z

TO-220 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
E
A

D
C

D1

L2
F1

G1

H2
G

Dia.
F
F2

L5
L9
L7
L6 L4
P011C

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 STP8NK80Z - STP8NK80ZFP - STW8NK80Z

TO-220FP MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.5 0.045 0.067
F2 1.15 1.5 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126

E
A

D
B

L3
L6
L7
F1

¯
F

G1

G
H

F2

1 2 3
L5
L2 L4

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STP8NK80Z - STP8NK80ZFP - STW8NK80Z

TO-247 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

A 4.7 5.3 0.185 0.209

D 2.2 2.6 0.087 0.102

E 0.4 0.8 0.016 0.031

F 1 1.4 0.039 0.055

F3 2 2.4 0.079 0.094

F4 3 3.4 0.118 0.134

G 10.9 0.429

H 15.3 15.9 0.602 0.626

L 19.7 20.3 0.776 0.779

L3 14.2 14.8 0.559 0.582

L4 34.6 1.362

L5 5.5 0.217

M 2 3 0.079 0.118

P025P

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 STP8NK80Z - STP8NK80ZFP - STW8NK80Z

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consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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