Datasheeta6259h PDF

Sanken Power Devices
STR-A6259H
from Allegro MicroSystems
Universal-Input 13 W 100 kHz
Flyback Switching Regulators
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The STR-A6259H is a 100 kHz PWM topology (with ±5% freq-

uency jittering for minimum EMI) regulator specifically designed
to satisfy the requirements for increased integration and reliability
Package DIP-8 in flyback converters. It incorporates a primary control and drive
circuit with an avalanche-rated power MOSFET.
Covering the power range from below 17 watts for a
Approximate Scale 1:1 230 VAC input, or to 13 watts for a universal (85 to 264 VAC)
input, this device can be used in a wide range of applications,
from DVD players and VCR player/recorders to ac adapters for
cellular phones and digital cameras. An auto-burst standby func-
tion reduces power consumption at light load, while multiple
FEATURES AND BENEFITS protections, including the avalanche-energy guaranteed MOSFET,
provide high reliability of system design.
100 kHz PWM with ±5% frequency jittering for EMI noise Cycle-by-cycle current limiting, undervoltage lockout with
filtering cost reduction hysteresis, overvoltage protection, and thermal shutdown protect
Rugged 650 V avalanche-rated MOSFET: the power supply during the normal overload and fault conditions.
Overvoltage protection and thermal shutdown are latched after a
• Simplified surge absorption short delay. The latch may be reset by cycling the input supply.
• No VDSS derating required Low start-up current and a low-power standby mode selected
Low RDS(on) : 6 Ω maximum from the secondary circuit completes a comprehensive suite of
features.
Auto-burst mode for stand-by operation or light loads; less It is provided in an 8-pin mini-DIP plastic package with pin
transformer audible noise 6 removed. The leadframe plating is pure Sb, and the package
complies with RoHS.
Built-in leading edge blanking
Soft start and low start-up current; start-up circuit disabled in
operation
Auto-burst stand-by (intermittent operation) input power
<0.1 W at no load
Built-in constant-voltage/constant current (CV/CC)
Multiple protections:
• Pulse-by-pulse overcurrent protection (OCP)
• Overload protection (OLP) with auto restart
• Latching overvoltage protection (OVP)
• Undervoltage lockout (UVLO) with hysteresis
• Latching thermal shutdown (TSD)
All performance characteristics given are typical values for circuit or

system baseline design only and are at the nominal operating voltage and Always order by complete part number, e.g.: STR-A6259H
an ambient temperature of +25°C, unless otherwise stated.
Datasheet 28103.44-6b
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Universal Input 13 W 100 kHz
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FUNCTIONAL BLOCK DIAGRAM AND TERMINAL ASSIGNMENTS
Vcc 5 8 D
RESET Istartup
Internal
UVLO 7 D
OVP 7.2V =1.1mA
BIAS
R 13.4V/10V
32V
TSD Delay S Q
10 µs
125°C
Drive
PWM OSC RQ
S 1 S/OCP
CV/CC
Feedback FB/CC
4
Control /OLP
Soft Start OLP
FM/SS 2 OCP LEB
Frequency
Modulation 3 GND
Number Name Description Functions

MOSFET Source/Overcurrent
1 S/OCP Source/OCP terminal
protection
Capacitor connection terminal for
2 FM/SS FM/Soft start terminal
frequency jitter and soft start.
3 GND Ground terminal Ground
Input of constant voltage control
signal / constant current operation
4 FB /CC/OLP FB/CC/OLP terminal
control signal / over load protection
signal
Input of power supply for control
5 VCC Power supply terminal
circuit
7 MOSFET drain / Input of startup
D Drain terminals
8 current
2
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036
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ABSOLUTE MAXIMUM RATINGS at TA = 25°C
Characteristic Symbol Terminal Note Max. Unit
Drain Current1 IDpeak 8-1 Single Pulse 1.8 A
VS/OCP = 0.83 V with reference to GND,
Maximum Switching Current IDMAX 8-1 1.8 A
TA = –20 to 125°C
Single Pulse 24 mJ
Single Pulse Avalanche Energy2 EAS 8-1
VDD = 99 V, L = 20 mH, IL = 1.8 A 24 mJ
S/OCP Terminal Voltage VOCP 1-3 –0.3 to 6 V
Controller (MIC) Input Voltage Vcc 5-3 36 V
FB/CC/OLP Terminal Voltage VFB 4-3 –0.3 to 11 V
FM Terminal Voltage VFM 2-3 –0.3 to 6 V
MOSFET Power Dissipation3,4 PD1 8-1 1.35 W
Controller (MIC) Power Dissipation5 PD2 5-3 For Vcc×Icc 0.15 W
Operating Internal Frame Temperature6 TF Refer to TOP –20 to 125 °C
Operating Ambient Temperature Top –20 to 125 °C
Storage Temperature Tstg –40 to 125 °C
Channel Junction Temperature TJ 150 °C
1Refer to figure 1
2Refer to figure 3
3Refer to figure 5
4Mounted on 15 x 15 mm printed circuit board
5Refer to figure 6
6Measured at the root of terminal 3
Figure 1 – MOSFET Safe Operating Area Figure 2 – MOSFET Safe Operating Area
Derating Curve Drain Current versus Voltage
100 10.00
Temperature Derating Coefficient (%)
80
0.
Drain Current, ID (A)
1.00
1
Safe Operating Area
it
s
1
60 lim (on)
m
n t S
s
re R D
ur to
C ue
d
40
0.10
20
Refer to figure 1 for MOSFET SOA
temperature derating coefficient
0 0.01
0 25 50 75 100 125 150 1 10 100 1000
Temperature, TF (°C) Drain-to-Source Voltage, VDS (V)
3
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Figure 3 – MOSFET Avalanche Energy Derating Curve Figure 4 – Transient Thermal Resistance
100 10.00
Transient Thermal Resistance, RθJC (°C/W)

80
EAS Derating Coefficient (%)
1.00
60
40
0.10
20
0 0.01
1µ 10µ 100µ 1m 10m 100m
25 50 75 100 125 150
t (s)
Channel Junction Temperature, TJ (°C)
Figure 5 – MOSFET Power Dissipation versus Temperature Figure 6 – MIC Power Dissipation versus Temperature
1.6 1.6
1.4 1.4
1.2 1.2
Power Dissipation, PD1 (W)
Power Dissipation, PD2 (W)
PD1 = 1.35 W at TA &

1.0 1.0
0.8 0.8
0.6 0.6
0.4 0.4
PD2 = 0.15 W at TA &
0.2 0.2
0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Ambient Temperature, TA (°C) Internal Frame Temperature, TF (°C)
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ELECTRICAL CHARACTERISTICS for Controller (MIC), valid at TA = 25°C, VCC = 18 V, unless otherwise specified
Characteristic Symbol Terminal Test Conditions Min. Typ. Max. Unit
(Power supply voltage at which device starts operating)
Operation Start Voltage VCC(ON) 5-3 12.9 14.3 15.7 V
Measurement circuit 1, VCC = 0 though 13.1 to 16.1 V
(Power supply voltage at which device stops operating)
Operation Stop Voltage VCC(OFF) 5-3 9 10 11 V
Measurement circuit 1, VCC = 16.1 through 9 to 11 V
(Inflow current into power supply terminal, in operation)
Circuit Current In Operation ICC(ON) 5-3 – – 4 mA
Measurement circuit 1
(Inflow current into power supply terminal, while subject to
Initialization Circuit Current ICC(OFF) 5-3 UVLO prior to operation) – – 25 μA
Measurement circuit 1, VCC = 13 V
(Center oscillation frequency of D terminal)
Center Switching Frequency fosc(av) 8-3 90 100 110 KHz
Maximum frequency – minimum frequency
Frequency Jitter Deviation Δf 8-3 6 10 14 kHz
(Maximum width of the low portion of the D terminal
Maximum Duty Cycle DMAX 8-3 waveform) 70 76 82 %
(VFM at which the FM current is changed from 10 μA to
FM High Voltage VHFM 2-3 –10 μA) 4.0 4.5 5.0 V
(VFM at which the FM current is changed from –10 μA to
FM Low Voltage VLFM 2-3 10 μA) 3.2 3.6 4.0 V
Outflow current from FM terminal at VFM = VLFM (3.7 V typ.)
FM Outflow Current IsorcFM 2-3 7.7 11 15.4 μA
Inflow current into FM terminal at VFM = VHFM (4.4 V typ.)
FM Inflow Current IsinkFM 2-3 –15.4 –11 –7.7 μA
(The drain current at which the low portion of the D
terminal waveform becomes shorter than the high portion,
OCP Threshold Voltage VOCP(th) 1-3 0.67 0.74 0.81 V
with VOCP increasing)
(The low portion of the D terminal waveform with
Leading Edge Blanking Time twb 8-3 VOCP = 1 V) 240 350 460 ns
(FB/CC/OLP terminal voltage at which D terminal
Burst Threshold Voltage Vburst(th) 4-3 waveform oscillation stops due to VFB decreasing from 5 V) 1.0 1.12 1.24 V
(FB/CC/OLP terminal voltage at which D terminal
OLP Threshold Voltage VOLP(th) 4-3 waveform oscillation stops due to VFB increasing from 5 V) 7.3 8.6 9.9 V
Output Current at OLP (Outflow current from FB/CC/OLP terminal at VFB = 8 V)
IOLP 4-3 12 18 25 μA
Operation Measurement circuit 4
(Time between surpassing VOLP(th) and stop of oscillation)
OLP Delay Time TOLP 4-3 0.84 1.2 1.56 s
(Outflow current from FB/CC/OLP terminal at VFB = 0 V)
Maximum Feedback Current IFB(MAX) 4-3 220 310 430 μA
Continued on next page…
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ELECTRICAL CHARACTERISTICS for Controller (MIC) continued, valid at TA = 25°C, VCC = 18 V, unless otherwise specified
(FB/CC/OLP terminal voltage at which IFB changes from
Constant Current Set Voltage VSET(CC) 4-3 280 μA to 16 μA due to VFB increasing from 5 V) 4.9 5.8 6.7 V
(FB/CC/OLP terminal voltage at which IFB changes from
Constant Current Reset
VRES(CC) 4-3 16 μA to 280 μA due to VFB decreasing from 8 V) 3.5 3.9 4.3 V
Voltage
VRES(CC) × VCC = 25 V, Measurement circuit 4, VCC = 25 V
(Outflow current from VCC terminal at VDD = 600 V)
Start-Up Current Istartup 6-3 0.77 1.1 1.43 mA
Measurement circuit 5, VCC = 13 V
(VCC at which the oscillation of the D terminal waveform
OVP Threshold Voltage VCC(OVPth) 5-3 stops due to VCC increasing from 18 V) 28.8 32 35.2 V
Measurement circuit 1, VCC = 18 through 31 to 35.2 V
(Inflow current into VCC at VCC = 8.4 V, after OVP
Latch Circuit Sustaining
ICC(H) 5-3 operation) – – 270 μA
Current1
Measurement circuit 1, VCC = 35.2 to 8.6 V
(VCC at which ICC drops below 20 μA due to decreasing
Latch Circuit Release
VCC(LaOFF) 5-3 VCC after OVP operation) 5.9 7.2 8.6 V
Voltage1
Measurement circuit 1, VCC = 35.2 through 5.9 to 8.6 V
Thermal Shutdown Operating
TJ(TSD) 125 140 – °C
Temperature
ELECTRICAL CHARACTERISTICS for MOSFET, valid at TA = 25°C, VCC = 18 V, unless otherwise specified
Drain-to-Source Breakdown
VDSS 8-1 Measurement circuit 6, ID = 300 μA 650 – – V
Voltage
(Inflow current into D terminal at VDD = 650 V)
Drain Leakage Current IDSS 8-1 – – 300 μA
On-Resistance RDS(ON) 8-1 Measurement circuit 3, ID = 0.4 A – – 6 Ω
Switching Time tf 8-1 Measurement circuit 2 – – 250 ns
Between channel and internal frame; measured at the root
Thermal Resistance Rθch-F – – 52 °C/W
of terminal 3
1Latch circuit enabled when OVP and TSD in operation
6
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Measurement Circuit 1
VD
36V
8 7 5 18V Vcc(OVP)
Vcc(ON) Vcc
D D VCC 13V Vcc(OFF) 8.4V Vcc(La.OFF)
100 Ω
Vcc 18V
STR-A6259H
0V
FB/CC
S/OCP FM/SS GND /OLP VD VD
1 2 3 4
10V
A
V DD + Icc 4µA
Icc 140µA typ.
Icc typ.
47nF 1µF
5.1V Icc(OFF) Icc
Vcc Icc(H)
VD 18V
8 7 5 V CC
D D VCC
100 Ω V H FM
V L FM+(V H FM -V L FM )/2
STR-A6259H 10V
V L FM
FB/CC V FM
S/OCP FM/SS GND /OLP 90%
1 2 3 4 IsinkFM
10V IFM ·Δf =fosc(Hi)-fosc(Lo)
IFM
0µA
A 18V IsorcFM ·Dmax=T2/T1 100 10%
V DD +
VD
1µF T2
5.1V Vcc
VD
V FM 0V
tf
fosc(Hi) fosc(Lo) fosc(av)
T1
VD
18V
8 7 5
D D VCC Vcc
1V
Vocp
ID STR-A6259H
V OCP 0V
0.4A FB/CC
S/OCPFM/SS GND /OLP
1 2 3 4
VD
V OCP 18V +
V D(Lo)
47nF Vcc 1µF Tbw
5.1V
·RDS(ON) =V D(Lo) / 0.4
7
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25V
18V
8 7 5 Vcc
V OLP
D D VCC V SET(CC)
100 Ω
V RST(CC)
STR-A6259H V (HYS) 8V
FB/CC V FB
S/OCP FM/SS GND /OLP Vburst
0V
1 2 3 4 TOLP
10V
IFB
V DD A Vcc + VD
47nF 1µF
V FB
280µA typ. 20µA typ.
IFB 280µA typ.
IFB(MAX) IOLP
Measurement Circuit 5 Measurement Circuit 6
8 7 5 8 7 5
D D VCC D D VCC
A A
STR-A6259H VD STR-A6259H
ID Icc Icc
FB/CC FB/CC
S/OCP FM/SS GND /OLP V ID S/OCP FM/SS GND /OLP
1 2 3 4 1 2 3 4
V DD
Vcc 300
+ Vcc +
µA
1µF 18V 1µF
8 7 5 Vcc 18V
D D VCC
STR-A6259H V GS 8V
Icc
V DS FB/CC
S/OCP FM/SS GND /OLP
V DD
1 2 3 4
V DSpeak
Vcc +
IL
V DS V DD
18V 1µF
V GS
VDS peak
EAS = L (ILpeak )
2
Adjust T such that ILpeak = 1.8 A
2 VDS peak − VDD
8
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TYPICAL APPLICATION CIRCUIT
For improved thermal dissipation, connect terminals 7 and 8

to as large an area of exposed copper as possible
85~ 265VAC OUT
PC
8 7 5
D D VCC
GND
STR-A6259H R4
FB/CC
S/OCP FM/SS GND /OLP
1 2 3 4
PC Function of External Parts
R5 Mode R4 R5
CV/CC 1 to 1.8 MΩ 82 to 150 kΩ
OLP None None
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PACKAGE DIMENSIONS, DIP-8
Dimens ions in Inc hes

(for reference only)
Dimens ions in Millimeters

(controlling dimens ions )
10
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PACKING SPECIFICATIONS
Minimum packing option: Tubes
Stopper, with Stopper, with

Orientation of Devices in no tab attached tab
Shipping Tubes
50 pieces
Type A Type B
Shipping Tube
Dimensions
Inner Carton Dimensions

Capacity: 50 tubes
69
per inner carton 0

51 4
63
52
130 140
Outer Carton Dimensions

Capacity: 4 inner
cartons per outer carton;
135
145
10,000 devices maximum

per outer carton 0 5
52 53
265 290
All dimensions: mm
11
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WARNING — These devices are designed to be operated at lethal voltages and energy levels. Circuit designs
that embody these components must conform with applicable safety requirements. Precautions must be
taken to prevent accidental contact with power-line potentials. Do not connect grounded test equipment.
The use of an isolation transformer is recommended during circuit development and breadboarding.
Because reliability can be affected adversely by improper storage environments and handling methods, please observe the following cautions.
Cautions for Storage
• Ensure that storage conditions comply with the standard temperature (5°C to 35°C) and the standard relative humidity (around 40 to 75%); avoid
storage locations that experience extreme changes in temperature or humidity.
• Avoid locations where dust or harmful gases are present and avoid direct sunlight.
• Reinspect for rust in leads and solderability of products that have been stored for a long time.
Cautions for Testing and Handling
When tests are carried out during inspection testing and other standard test periods, protect the products from power surges from the testing device,
shorts between adjacent products, and shorts to the heatsink.
Remarks About Using Silicone Grease with a Heatsink
• When silicone grease is used in mounting this product on a heatsink, it shall be applied evenly and thinly. If more silicone grease than required is
applied, it may produce stress.
• Volatile-type silicone greases may produce cracks after long periods of time, resulting in reduced heat radiation effect. Silicone grease with low
consistency (hard grease) may cause cracks in the mold resin when screwing the product to a heatsink.
• Our recommended silicone greases for heat radiation purposes, which will not cause any adverse effect on the product life, are indicated below:
Type Suppliers
G746 Shin-Etsu Chemical Co., Ltd.
YG6260 Toshiba Silicone Co., Ltd.
SC102 Dow Corning Toray Silicone Co., Ltd.
Soldering
• When soldering the products, please be sure to minimize the working time, within the following limits:
260±5°C 10 s
350±5°C 3 s
• Soldering iron should be at a distance of at least 1.5 mm from the body of the products
Electrostatic Discharge
• When handling the products, operator must be grounded. Grounded wrist straps worn should have at least 1 MΩ of resistance to ground to prevent
shock hazard.
• Workbenches where the products are handled should be grounded and be provided with conductive table and floor mats.
• When using measuring equipment such as a curve tracer, the equipment should be grounded.
• When soldering the products, the head of soldering irons or the solder bath must be grounded in other to prevent leak voltages generated by them
from being applied to the products.
• The products should always be stored and transported in our shipping containers or conductive containers, or be wrapped in aluminum foil.
12
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The products described herein are manufactured in Japan by Sanken Electric Co., Ltd. for sale by Allegro MicroSystems, Inc.
Sanken and Allegro reserve the right to make, from time to time, such departures from the detail specifications as may be required to permit im-
provements in the performance, reliability, or manufacturability of its products. Therefore, the user is cautioned to verify that the information in this
publication is current before placing any order.
When using the products described herein, the applicability and suitability of such products for the intended purpose shall be reviewed at the users
responsibility.
Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products
at a certain rate is inevitable.
Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems
against any possible injury, death, fires or damages to society due to device failure or malfunction.
Sanken products listed in this publication are designed and intended for use as components in general-purpose electronic equipment or apparatus
(home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Their use in any application requiring radiation
hardness assurance (e.g., aerospace equipment) is not supported.
When considering the use of Sanken products in applications where higher reliability is required (transportation equipment and its control systems
or equipment, fire- or burglar-alarm systems, various safety devices, etc.), contact a company sales representative to discuss and obtain written
confirmation of your specifications.
The use of Sanken products without the written consent of Sanken in applications where extremely high reliability is required (aerospace equip-
ment, nuclear power-control stations, life-support systems, etc.) is strictly prohibited.
The information included herein is believed to be accurate and reliable. Application and operation examples described in this publication are
given for reference only and Sanken and Allegro assume no responsibility for any infringement of industrial property rights, intellectual property
rights, or any other rights of Sanken or Allegro or any third party that may result from its use.
Copyright © 2006 Allegro MicroSystems, Inc.

This datasheet is based on Sanken datasheet SSE2366-2
13

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Sanken Power Devices

The STR-A6259H is a 100 kHz PWM topology (with ±5% freq-

All performance characteristics given are typical values for circuit or

Soft Start OLP

FM/SS 2 OCP LEB

Number Name Description Functions

Temperature, TF (°C) Drain-to-Source Voltage, VDS (V)

Transient Thermal Resistance, RθJC (°C/W)

Power Dissipation, PD2 (W)

PD1 = 1.35 W at TA &

Continued on next page…

Measurement Circuit 5 Measurement Circuit 6

For improved thermal dissipation, connect terminals 7 and 8

85~ 265VAC OUT

PC Function of External Parts

Dimens ions in Inc hes

Dimens ions in Millimeters

Stopper, with Stopper, with

Inner Carton Dimensions

per inner carton 0

Outer Carton Dimensions

10,000 devices maximum

Copyright © 2006 Allegro MicroSystems, Inc.

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PD1 = 1.35 W at TA &