SMF05C, SMF12C, SMF15C,

SMF24C

5 Line Transient Voltage

Suppressor Array
This 5−line voltage transient suppressor array is designed for
application requiring transient voltage protection capability. It is http://onsemi.com
intended for use in over−transient voltage and ESD sensitive
equipment such as computers, printers, automotive electronics,
networking communication and other applications. This device SC−88 FIVE TRANSIENT
features a monolithic common cathode design which protects five VOLTAGE SUPPRESSOR
independent lines in a single SC−88 package.
100 W PEAK POWER
Features
• Protects up to 5 Line in a Single SC−88 Package
• Peak Power Dissipation − 100 W (8 X20
s Waveform)
PIN ASSIGNMENT
• ESD Rating of Class 3B (Exceeding 8 kV) per Human Body Model
and Class C (Exceeding 400 V) per Machine Model.
1 6
• Compliance with IEC 61000−4−2 (ESD) 15 kV (Air), 8 kV (Contact)
• UL Flammability Rating of 94V−0 6
2 5
1 3 4
Applications
• Hand Held Portable Applications SC−88
CASE 419B PIN 1. CATHODE
• Networking and Telecom STYLE 24 2. ANODE
• Automotive Electronics 3. CATHODE
4. CATHODE
• Serial and Parallel Ports 5. CATHODE
• Notebooks, Desktops, Servers 6. CATHODE

MARKING DIAGRAM
MAXIMUM RATINGS (TJ=25°C unless otherwise specified)
Symbol Rating Value Unit
PPK 1 Peak Power Dissipation 100 W DEVM
8x20
s Double Exponential Waveform
(Note 1)
TJ Operating Junction Temperature Range −40 to 125 °C
6J = SMF05C
TSTG Storage Temperature Range −55 to 150 °C 6K = SMF12C
6L = SMF15C
TL Lead Solder Temperature (10 s) 260 °C
6M = SMF24C
M = Date Code
ESD Human Body Model (HBM) 16000 V
Machine Model (MM) 400
IEC 61000−4−2 Air (ESD) 15000
IEC 61000−4−2 Contact (ESD) 15000
ORDERING INFORMATION
1. Non−repetitive current pulse per Figure 3.
Device Package Shipping

SMF05CT1 SC−88 3000/Tape & Reel

SMF12CT1 SC−88 3000/Tape & Reel

SMF15CT1 SC−88 3000/Tape & Reel

SMF24CT1 SC−88 3000/Tape & Reel

 Semiconductor Components Industries, LLC, 2003 1 Publication Order Number:

August, 2003 − Rev. 0 SMF05C/D
 SMF05C, SMF12C, SMF15C, SMF24C

SMF05C ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)

Parameter Symbol Conditions Min Typ Max Unit
Reverse Working Voltage VRWM (Note 2) 5.0 V
Breakdown Voltage VBR IT=1 mA, (Note 3) 6.2 7.2 V
Reverse Leakage Current IR VRWM = 5 V 0.07 5.0
A
Clamping Voltage VC IPP = 5 A (8x20
s Waveform) 9.8 V
Clamping Voltage VC IPP = 8 A (8x20
s Waveform) 12.5 V
Maximum Peak Pulse Current IPP 8x20
s Waveform 8.0 A
Capacitance CJ VR = 0 V, f=1 MHz (Line to GND) 80 130 pF

SMF12C ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)

Parameter Symbol Conditions Min Typ Max Unit
Reverse Working Voltage VRWM (Note 2) 12 V
Breakdown Voltage VBR IT=1 mA, (Note 3) 13.3 15 V
Reverse Leakage Current IR VRWM = 12 V 0.01 1.0
A
Clamping Voltage VC IPP = 3 A (8x20
s Waveform) 21 V
Clamping Voltage VC IPP = 6 A (8x20
s Waveform) 23 V
Maximum Peak Pulse Current IPP 8x20
s Waveform 6.0 A
Capacitance CJ VR = 0 V, f=1 MHz (Line to GND) 40 60 pF

SMF15C ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

Parameter Symbol Conditions Min Typ Max Unit
Reverse Working Voltage VRWM (Note 2) 15 V
Breakdown Voltage VBR IT=1 mA, (Note 3) 17 19 V
Reverse Leakage Current IR VRWM = 15 V 0.01 1.0
A
Clamping Voltage VC IPP = 1 A (8x20
s Waveform) 23 V
Clamping Voltage VC IPP = 5 A (8x20
s Waveform) 29 V
Maximum Peak Pulse Current IPP 8x20
s Waveform 5.0 A
Capacitance CJ VR = 0 V, f=1 MHz (Line to GND) 33 45 pF

SMF24C ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

Parameter Symbol Conditions Min Typ Max Unit
Reverse Working Voltage VRWM (Note 2) 24 V
Breakdown Voltage VBR IT=1 mA, (Note 3) 26.7 32 V
Reverse Leakage Current IR VRWM = 24 V 0.01 1.0
A
Clamping Voltage VC IPP = 1 A (8x20
s Waveform) 40 V
Clamping Voltage VC IPP = 2.5 A (8x20
s Waveform) 44 V
Maximum Peak Pulse Current IPP 8x20
s Waveform 2.5 A
Capacitance CJ VR = 0 V, f=1 MHz (Line to GND) 21 25 pF
2. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. VBR is measured at pulse test current IT.

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 SMF05C, SMF12C, SMF15C, SMF24C

TYPICAL PERFORMANCE CURVES (TJ=25°C unless otherwise specified)

100 100
tr PEAK VALUE IRSM @ 8
s
PEAK POWER DISSIPATION (%)

90 90

% OF PEAK PULSE CURRENT

80 80 PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
70 70 PEAK CURRENT DECAY = 8
s
60 60
HALF VALUE IRSM/2 @ 20
s
50 50
40 40
30 30
tP
20 20
10 10
0 0
0 25 50 75 100 125 150 175 200 0 20 40 60 80
TA, AMBIENT TEMPERATURE (°C) t, TIME (
s)
Figure 1. Pulse Derating Curve Figure 2. 8 × 20
s Pulse Waveform

100 100
VCLAMP, CLAMPING VOLTAGE (V)

SMF24C
JUNCTION CAPACITANCE (pF) SMF05C
SMF15C
SMF12C SMF12C
SMF05C SMF15C
10 SMF24C
10

1 1
0 5 10 15 0 5 10 15 20 25
IPP, PEAK PULSE CURRENT (A) VBR, REVERSE VOLTAGE (V)
Figure 3. Clamping Voltage vs Peak Pulse Current Figure 4. Junction Capacitance vs Reverse Voltage

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 SMF05C, SMF12C, SMF15C, SMF24C

PACKAGE DIMENSIONS

SC−88/SOT−363
6−LEAD PLASTIC PACKAGE
CASE 419B−02
ISSUE S

A
NOTES:
G 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.

6 5 4 INCHES MILLIMETERS
DIM MIN MAX MIN MAX
S −B− A 0.071 0.087 1.80 2.20
B 0.045 0.053 1.15 1.35
1 2 3
C 0.031 0.043 0.80 1.10
D 0.004 0.012 0.10 0.30
G 0.026 BSC 0.65 BSC
H −−− 0.004 −−− 0.10
D 6 PL J 0.004 0.010 0.10 0.25
K 0.004 0.012 0.10 0.30
0.2 (0.008) M B M N 0.008 REF 0.20 REF
S 0.079 0.087 2.00 2.20

N STYLE 24:
PIN 1. CATHODE
2. ANODE
J 3. CATHODE
4. CATHODE
C 5. CATHODE
6. CATHODE

H K

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

Literature Fulfillment: JAPAN: ON Semiconductor, Japan Customer Focus Center
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P.O. Box 5163, Denver, Colorado 80217 USA Phone: 81−3−5773−3850
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Email: [email protected] For additional information, please contact your local
Sales Representative.
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