MBR2045CTG,

MBRF2045CTG

Switch-mode
Power Rectifier
Features and Benefits
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• Low Forward Voltage
• Low Power Loss / High Efficiency
SCHOTTKY BARRIER
• High Surge Capacity
• 175°C Operating Junction Temperature
RECTIFIER
• 20 A Total (10 A Per Diode Leg) 20 AMPERES, 45 VOLTS
• These Devices are Pb−Free and are RoHS Compliant

Applications 1

• Power Supply − Output Rectification 2, 4

3
• Power Management
• Instrumentation
Mechanical Characteristics 4

• Case: Epoxy, Molded

• Epoxy Meets UL 94, V−0 @ 0.125 in
• Weight: 1.9 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 1 1
2 2
260°C Max. for 10 Seconds 3 3
• ESD Rating: Human Body Model = 3B
TO−220AB TO−220
Machine Model = C CASE 221A FULLPAK]
STYLE 6 CASE 221AH

DEVICE MARKING INFORMATION

See general marking information in the device marking
section on page 2 of this data sheet.

ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.

© Semiconductor Components Industries, LLC, 2016 1 Publication Order Number:

July, 2016 − Rev. 12 MBR2045CT/D
 MBR2045CTG, MBRF2045CTG

AYWW AYWW
MBR2045CTG B2045G
AKA AKA

TO−220AB TO−220 FULLPAK

A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
AKA = Diode Polarity

Figure 1. Marking Diagrams

MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 45 V
Working Peak Reverse Voltage VRWM
VR
DC Blocking Voltage
Average Rectified Forward Current IF(AV) A
Per Device 20
Per Diode (TC = 165°C) 10
Peak Repetitive Forward Current IFRM 20 A
per Diode Leg (Square Wave, 20 kHz, TC = 163°C)

Non−Repetitive Peak Surge Current IFSM 150 A

(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)

Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 1.0 A
See Figure 13
Storage Temperature Range Tstg −65 to +175 °C
Operating Junction Temperature (Note 1) TJ −65 to +175 °C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Thermal Resistance °C/W
(MBR2045CTG) − Junction−to−Case RqJC 2.0
− Junction−to−Ambient RqJA 60
(MBRF2045CTG) − Junction−to−Case RqJC 4.75
− Junction−to−Ambient RqJA 75

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 MBR2045CTG, MBRF2045CTG

ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
Instantaneous Forward Voltage (Note 2) vF V
(iF = 10 A, TJ = 125°C) − 0.50 0.57
(iF = 20 A, TJ = 125°C) − 0.67 0.72
(iF = 20 A, TJ = 25°C) − 0.71 0.84
Instantaneous Reverse Current (Note 2) iR mA
(Rated dc Voltage, TJ = 125°C) − 10.4 15
(Rated dc Voltage, TJ = 25°C) − 0.02 0.1
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.

ORDERING INFORMATION
Device Order Number Package Type Shipping†
MBR2045CTG TO−220 50 Units / Rail
(Pb−Free)

MBRF2045CTG TO−220FP 50 Units / Rail

(Pb−Free)

100 100
TJ = 150°C
70 70
125°C
50 50 25°C

30 30

20 TJ = 150°C 20
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)

iF, INSTANTANEOUS FORWARD CURRENT (AMPS)

10 10

7.0 7.0

5.0 5.0
125°C
25°C
3.0 3.0

2.0 2.0

1.0 1.0

0.7 0.7

0.5 0.5

0.3 0.3

0.2 0.2

0.1 0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.2 0.4 0.6 0.8 1.0 1.2 1.4
vF, INSTANTANEOUS VOLTAGE (VOLTS) vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage

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 MBR2045CTG, MBRF2045CTG

100 100
TJ = 150°C TJ = 150°C
10
10 125°C
IR , REVERSE CURRENT (mA)

IR , REVERSE CURRENT (mA)

125°C
1.0 100°C
100°C 1.0
75°C
0.1
0.1
0.01
25°C
25°C
0.001 0.01

0.0001 0.001
0 5.0 10 15 20 25 30 35 40 45 50 0 5.0 10 15 20 25 30 35 40 45 50
VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current

200 18

IF(AV) , AVERAGE FORWARD CURRENT (AMPS)

IFSM , PEAK HALF-WAVE CURRENT (AMPS)

dc
16

14
100 12

70 10 SQUARE
8.0 WAVE
50
6.0

4.0
30
2.0
20 0
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 140 145 150 155 160 165 170 175 180
NUMBER OF CYCLES AT 60 Hz TC, CASE TEMPERATURE (°C)

Figure 5. Maximum Surge Capability Figure 6. Current Derating, Case, Per Leg
PF(AV) , AVERAGE FORWARD POWER DISSIPATION (WATTS)

20 28
I F(AV) , AVERAGE FORWARD CURRENT (AMPS)

RqJA = 16°C/W 26 TJ = 175°C

18
dc (With TO-220 Heat Sink) 24
16 RqJA = 60°C/W 22
14 (No Heat Sink) 20
SQUARE WAVE 18
12 16 SQUARE dc
10 14 WAVE
12
8.0 dc 10
6.0 8
4.0 6
4
2.0 2
0 0
0 25 50 75 100 125 150 175 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
TA, AMBIENT TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMPS)

Figure 7. Current Derating, Ambient, Per Leg Figure 8. Forward Power Dissipation

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 MBR2045CTG, MBRF2045CTG

1.0
r(t), TRANSIENT THERMAL RESISTANCE 0.7
0.5

0.3
0.2
(NORMALIZED)

Ppk Ppk
DUTY CYCLE, D = tp/t1
tp
PEAK POWER, Ppk, is peak of an
0.1 TIME
equivalent square power pulse.
0.07 t1
0.05 DTJL = Ppk • RqJL [D + (1 - D) • r(t1 + tp) + r(tp) - r(t1)] where:
DTJL = the increase in junction temperature above the lead temperature.
0.03 r(t) = normalized value of transient thermal resistance at time, t, i.e.:
0.02 r(t1 + tp) = normalized value of transient thermal resistance at time,
t1 + tp, etc.
0.01
0.01 0.1 1.0 10 100 1000
t, TIME (ms)
Figure 9. Thermal Response for MBR2045CT

100
R(t), TRANSIENT THERMAL RESISTANCE

D = 0.5
0.2
10 0.1
0.05
0.02
1.0
0.01

0.1
P(pk)
t1
0.01 SINGLE PULSE
t2
DUTY CYCLE, D = t1/t2
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000

t1, TIME (sec)

Figure 10. Thermal Response Junction−to−Ambient for MBRF2045CT

10
R(t), TRANSIENT THERMAL RESISTANCE

D = 0.5

1.0 0.2
0.1
0.05
0.02
0.1
0.01
P(pk)
0.01 SINGLE PULSE t1
t2
DUTY CYCLE, D = t1/t2
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000

t1, TIME (sec)

Figure 11. Thermal Response Junction−to−Case for MBRF2045CT

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 MBR2045CTG, MBRF2045CTG

HIGH FREQUENCY OPERATION 1000

TJ = 25°C
Since current flow in a Schottky rectifier is the result of 900
f = 1 MHz
majority carrier conduction, it is not subject to junction di- 800
ode forward and reverse recovery transients due to minority

C, CAPACITANCE (pF)
700
carrier injection and stored charge. Satisfactory circuit ana-
600
lysis work may be performed by using a model consisting
500
of an ideal diode in parallel with a variable capacitance.
(See Figure 12.) 400
Rectification efficiency measurements show that opera- 300
tion will be satisfactory up to several megahertz. For ex- 200
ample, relative waveform rectification efficiency is ap- 100
proximately 70 percent at 2.0 MHz, e.g., the ratio of dc
0
power to RMS power in the load is 0.28 at this frequency, 0 10 20 30 40 50
whereas perfect rectification would yield 0.406 for sine VR, REVERSE VOLTAGE (VOLTS)
wave inputs. However, in contrast to ordinary junction di-
Figure 12. Typical Capacitance
odes, the loss in waveform efficiency is not indicative of
power loss; it is simply a result of reverse current flow +150 V, 10 mAdc
through the diode capacitance, which lowers the dc output
2.0 kW
voltage.

VCC 12 Vdc

+
D.U.T.
12 V 100 4.0 mF
2N2222

2.0 ms
1.0 kHz

CURRENT 2N6277
AMPLITUDE 100
ADJUST CARBON
0-10 AMPS

1.0 CARBON

1N5817

Figure 13. Test Circuit for dv/dt and Reverse Surge Current

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 MBR2045CTG, MBRF2045CTG

PACKAGE DIMENSIONS

TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
−T− PLANE 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
B F C BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
T S
INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
Q A B 0.380 0.415 9.66 10.53
C 0.160 0.190 4.07 4.83
1 2 3 U D 0.025 0.038 0.64 0.96
F 0.142 0.161 3.61 4.09
H G 0.095 0.105 2.42 2.66
H 0.110 0.161 2.80 4.10
K J 0.014 0.024 0.36 0.61
Z K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
L R Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
V J S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
G U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
D Z --- 0.080 --- 2.04
N STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE

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 MBR2045CTG, MBRF2045CTG

PACKAGE DIMENSIONS

TO−220 FULLPACK, 3−LEAD

CASE 221AH
ISSUE F

A SEATING NOTES:
B PLANE 1. DIMENSIONING AND TOLERANCING PER ASME
E Y14.5M, 1994.
P A 2. CONTROLLING DIMENSION: MILLIMETERS.
E/2 H1 3. CONTOUR UNCONTROLLED IN THIS AREA.
0.14 M B A M A1 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE
PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO
EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE
Q MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY.
D 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION.
C LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00.
1 2 3 NOTE 3 6. CONTOURS AND FEATURES OF THE MOLDED PACKAGE BODY
MAY VARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1
AND H1 FOR MANUFACTURING PURPOSES.
L L1 MILLIMETERS
DIM MIN MAX
A 4.30 4.70
A1 2.50 2.90
3X b c A2 2.50 2.90
b 0.54 0.84
3X b2 0.25 M B A M C A2 b2 1.10 1.40
c 0.49 0.79
e SIDE VIEW D 14.70 15.30
FRONT VIEW E 9.70 10.30
e 2.54 BSC
H1 6.60 7.10
L 12.50 14.73
L1 --- 2.80
P 3.00 3.40
SECTION D−D Q 2.80 3.20

A
NOTE 6
NOTE 6

H1

D D

A SECTION A−A
ALTERNATE CONSTRUCTION

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