Design of MEMS Temperature Sensor For High Voltage Switchgear
Design of MEMS Temperature Sensor For High Voltage Switchgear
Design of MEMS Temperature Sensor For High Voltage Switchgear
ISBN: 978-1-60595-516-2
ABSTRACT
INTRAODUCTION
1
Suxiong Cai, Zerong Huang, Shisen Gao, Huizhou Power Supply Bureau of Guangdong
Power Grid Co., Ltd, Guangdong, China, 516000.
Xiaorui Wang, Department of Electrical Engineering, Tsinghua University, Beijing,
China,100084.
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measurement methods commonly used at home and abroad include contact and non-
contact temperature measurement.
In this paper, most existing switchgear temperature measurement plans are
summarized. There is no effective real-time on-line monitoring method for the
overheating problem of the conductive connection. MEMS temperature sensor
becomes the preference plan of switchgear online temperature measurement due to
its advantages compared with other temperature measurement plans.
Empirical Method
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fiber grating into sensor probe for testing temperature change. Distributed optical
fiber (DTS) temperature measurement is based on the principle of Raman scattering,
namely optical wave is regarded as electromagnetic wave for transmission in
medium, which follows the Maxwell's equations. It is related to medium properties.
The principle is utilized for measuring temperature change along optical fiber. It has
excellent advantages in long-distance distributed temperature measurement such as
cable, etc. [2].
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Microelectronic Device Temperature Measurement
Summary
There are various plans for MEMS temperature sensors, such as two-layer thin-
film silicon microbridge pressure resistance MEMS temperature sensor [5], resonant
MEMS temperature sensor [6], capacitive MEMS temperature sensor [7], etc. In the
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paper, cantilever piezoresistive MEMS temperature sensor is introduced in details.
Cantilever piezoresistive MEMS temperature sensor is composed of a double-layer
membrane structure. The upper layer is made of metal Al, the lower layer is made of
Si on the SOI device layer (Silicon-On-Insulator namely silicon on insulating
substrate). The thermal expansion coefficient of metal aluminum is about 10 times
compared with that of silicon. When the ambient temperature of the cantilever is
changed, the aluminum film deformation is larger than that of silicon, and the
cantilever is bended. Wheatstone bridge is formed on the surface of Si. The
resistance value in the wheat stone bridge is changed and when the cantilever is
bended [5].
General flow is shown as follows: (1) selection of N-shaped resistance SOI; (2)
ion implantation of boron fluoride (BF), the process is shown as follows: the
element ions accelerated by the electric field is injected into the surface of the solid
material at a certain speed for forming adulteration. The injection method is
characterized by high accuracy, high purity and expensive cost. Thermal annealing
process is always required after ion implantation, namely it should be annealed for
15 to 30 minutes under 950°C high temperature nitrogen protection, thereby
eliminating damage due to injection and activating injected impurity ions. Damage
also can be reduced through making the ions penetrate through the thin oxide layer.
(3) Determination of contact hole (conductive terminal); (4) Formation of oxide
layer and sputtering of Al; (5) Coating of polyimide (PI) on the right side for
adhesive solidification; (6) negative etching, hollowing and release of cantilever [8-
9].
CONCLUSIONS
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can not meet the demand of current power system high voltage switchgear.
Therefore, MEMS temperature sensor plan is proposed. Several sensor plans are
considered comprehensively.
Aluminum layer
Si layer
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