High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications

2SC1923
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
2SC1923
High Frequency Amplifier Applications
Unit: mm
FM, RF, MIX, IF Amplifier Applications
• Small reverse transfer capacitance: Cre = 0.7 pF (typ.)

• Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz)
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 40 V

Collector-emitter voltage VCEO 30 V
Emitter-base voltage VEBO 4 V
Collector current IC 20 mA
Base current IB 4 mA
Collector power dissipation PC 100 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg −55~125 °C JEDEC TO-92
JEITA SC-43
TOSHIBA 2-5F1B
Weight: 0.21 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO VCB = 18 V, IE = 0   0.5 µA

Emitter cut-off current IEBO VEB = 4 V, IC = 0   0.5 µA
hFE
DC current gain VCE = 6 V, IC = 1 mA 40  200
(Note)
Reverse transfer capacitance Cre VCE = 6 V, f = 1 MHz  0.70  pF
Transition frequency fT VCE = 6 V, IC = 1 mA  550  MHz
Collector-base time constant Cc･rbb’ VCE = 6 V, IE = −1 mA, f = 30 MHz   30 ps
Noise figure NF VCE = 6 V, IE = −1 mA, f = 100 MHz,  2.5 4.0* dB
Power gain Gpe Figure 1 15 18  dB
Note: hFE classification R: 40~80, O: 70~140, Y: 100~200 (* NF = 5.0dB max)
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2SC1923
L1: 0.8 mmφ silver plated copper wire, 4 T, 10ID, 8 LENGTH
Figure 1 NF, Gpe Test Circuit
y Parameter (typ.)
(1) Common emitter (VCE = 6 V, IE = −1 mA, f = 100 MHz)
Characteristics Symbol Typ. Unit
Input conductance gie 2.9 mS

Input capacitance Cie 10.2 pF
Reverse transfer admittance yre 0.33 µS
Phase angle of reverse transfer
θre −90 °
admittance
Forward transfer admittance |yfe| 40 mS
Phase angle of forward transfer
θfe −20 °
admittance
Output conductance goe 45 µS
Output capacitance Coe 1.1 pF
(2) Common base (VCE = 6 V, IE = −1 mA, f = 100 MHz)
Characteristics Symbol Typ. Unit
Input conductance gib 34 mS

Input capacitance Cib −10 pF
Reverse transfer admittance yrb 0.27 µS
Phase angle of reverse transfer
θrb −105 °
admittance
Forward transfer admittance |yfb| 34 mS
Phase angle of forward transfer
θfb 165 °
admittance
Output conductance gob 45 µS
Output capacitance Cob 1.1 pF
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RESTRICTIONS ON PRODUCT USE 000707EAA
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
7 2003-03-19

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2SC1923

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)

• Small reverse transfer capacitance: Cre = 0.7 pF (typ.)

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Collector-base voltage VCBO 40 V

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current ICBO VCB = 18 V, IE = 0   0.5 µA

Note: hFE classification R: 40~80, O: 70~140, Y: 100~200 (* NF = 5.0dB max)

L1: 0.8 mmφ silver plated copper wire, 4 T, 10ID, 8 LENGTH

Figure 1 NF, Gpe Test Circuit

Characteristics Symbol Typ. Unit

Input conductance gie 2.9 mS

(2) Common base (VCE = 6 V, IE = −1 mA, f = 100 MHz)

Characteristics Symbol Typ. Unit

Input conductance gib 34 mS

RESTRICTIONS ON PRODUCT USE 000707EAA

• The information contained herein is subject to change without notice.

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