The document provides specifications for two PNP silicon planar transistors - the FMMT4402 and FMMT4403. Key parameters specified include maximum turn-on and turn-off times, breakdown voltages, current and power ratings, transfer characteristics like gain and saturation voltages, and capacitances. Electrical characteristics are given at 25°C along with pulsed test conditions for some parameters.
The document provides specifications for two PNP silicon planar transistors - the FMMT4402 and FMMT4403. Key parameters specified include maximum turn-on and turn-off times, breakdown voltages, current and power ratings, transfer characteristics like gain and saturation voltages, and capacitances. Electrical characteristics are given at 25°C along with pulsed test conditions for some parameters.
The document provides specifications for two PNP silicon planar transistors - the FMMT4402 and FMMT4403. Key parameters specified include maximum turn-on and turn-off times, breakdown voltages, current and power ratings, transfer characteristics like gain and saturation voltages, and capacitances. Electrical characteristics are given at 25°C along with pulsed test conditions for some parameters.
The document provides specifications for two PNP silicon planar transistors - the FMMT4402 and FMMT4403. Key parameters specified include maximum turn-on and turn-off times, breakdown voltages, current and power ratings, transfer characteristics like gain and saturation voltages, and capacitances. Electrical characteristics are given at 25°C along with pulsed test conditions for some parameters.
PARTMARKING DETAILS: FMMT4402 - 2K E PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS C FMMT4403 - 2L Turn-On Time ton 35 ns VCC=-30V, VBE(off)=-2V IC=-150mA, IB1=-15mA (See Fig.1) B
Turn-Off Time t off 255 ns VCC=-30V, IC=-150mA ABSOLUTE MAXIMUM RATINGS.
IB1=IB2=-15mA (See Fig. 2) PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Continuous Collector Current IC -600 A Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) FMMT4402 FMMT4403 PARAMETER SYMBOL MIN. MAX. MIN. MAX. UNIT CONDITIONS Collector-Emitter V(BR)CEO -40 -40 V IC=-1mA, IB=0 Breakdown Voltage Collector-Base V(BR)CBO -40 -40 V IC=-0.1mA, IE=0 Breakdown Voltage Emitter-Base V(BR)EBO -5 -5 V IE=-0.1mA, IC=0 Breakdown Current Collector-Emitter ICEX -0.1 -0.1 µA VCE=-35V Cut-Off Current VEB(off) =-0.4V Base Cut-Off IBEX -0.1 -0.1 µA VCE=-35V Current VEB(off) =-0.4V Static Forward hFE 30 IC=-0.1mA, VCE=-1V Current 30 60 IC=-1mA, VCE=-1V TransferRatio 50 100 IC=-10mA, VCE=-1V 50 150 100 300 IC=-150mA,VCE=-2V* 20 20 IC=-500mA,VCE=-2V* Collector-Emitter VCE(sat) -0.4 -0.4 V IC=-150mA,IB=-15mA* Saturation Voltage -0.75 -0.75 V IC=-500mA,IB=-50mA* Base-Emitter VBE(sat) -0.75 -0.95 -0.75 -0.95 V IC=-150mA,IB=-15mA* Saturation Voltage -1.3 -1.3 V IC=-500mA,IB=-50mA Transition fT 150 200 MHz IC=-20mA,VCE=-10V Frequency f=100MHz Output Capacitance Cobo 8.5 8.5 pF VCB=-10 V,IE=0 f=100kHz Input Capacitance Cibo 30 30 pF VBE=0.5V IC=0, f=100kHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
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FMMT4402 SOT23 PNP SILICON PLANAR FMMT4402 FMMT4403 GENERAL PURPOSE TRANSISTOR FMMT4403 ISSUE 2 - MARCH 1995 ✪
SWITCHING CHARACTERISTICS (at Tamb= 25°C )
PARTMARKING DETAILS: FMMT4402 - 2K E PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS C FMMT4403 - 2L Turn-On Time ton 35 ns VCC=-30V, VBE(off)=-2V IC=-150mA, IB1=-15mA (See Fig.1) B
Turn-Off Time t off 255 ns VCC=-30V, IC=-150mA ABSOLUTE MAXIMUM RATINGS.
IB1=IB2=-15mA (See Fig. 2) PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Continuous Collector Current IC -600 A Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) FMMT4402 FMMT4403 PARAMETER SYMBOL MIN. MAX. MIN. MAX. UNIT CONDITIONS Collector-Emitter V(BR)CEO -40 -40 V IC=-1mA, IB=0 Breakdown Voltage Collector-Base V(BR)CBO -40 -40 V IC=-0.1mA, IE=0 Breakdown Voltage Emitter-Base V(BR)EBO -5 -5 V IE=-0.1mA, IC=0 Breakdown Current Collector-Emitter ICEX -0.1 -0.1 µA VCE=-35V Cut-Off Current VEB(off) =-0.4V Base Cut-Off IBEX -0.1 -0.1 µA VCE=-35V Current VEB(off) =-0.4V Static Forward hFE 30 IC=-0.1mA, VCE=-1V Current 30 60 IC=-1mA, VCE=-1V TransferRatio 50 100 IC=-10mA, VCE=-1V 50 150 100 300 IC=-150mA,VCE=-2V* 20 20 IC=-500mA,VCE=-2V* Collector-Emitter VCE(sat) -0.4 -0.4 V IC=-150mA,IB=-15mA* Saturation Voltage -0.75 -0.75 V IC=-500mA,IB=-50mA* Base-Emitter VBE(sat) -0.75 -0.95 -0.75 -0.95 V IC=-150mA,IB=-15mA* Saturation Voltage -1.3 -1.3 V IC=-500mA,IB=-50mA Transition fT 150 200 MHz IC=-20mA,VCE=-10V Frequency f=100MHz Output Capacitance Cobo 8.5 8.5 pF VCB=-10 V,IE=0 f=100kHz Input Capacitance Cibo 30 30 pF VBE=0.5V IC=0, f=100kHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
