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UMW UMW SS8050

SOT-23 Plastic-Encapsulate Transistors

SOT-23

SS8050 TRANSISTOR (NPN)

1. BASE
FEATURES 2. EMITTER
Complimentary to SS8550 3. COLLECTOR

MARKING: Y1

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit

VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 1.5 A
PC Collector Power Dissipation 0.3 W
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit

Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 40 V

Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V

Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V

Collector cut-off current ICBO VCB=40V, IE=0 0.1 μA

Collector cut-off current ICEO VCB=20V, IE=0 0.1 μA

Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA

hFE(1) VCE=1V, IC= 100mA 120 400

DC current gain
hFE(2) VCE=1V, IC= 800mA 40

Collector-emitter saturation voltage VCE(sat) IC=800mA, IB= 80mA 0.5 V

Base-emitter saturation voltage VBE(sat) IC=800mA, IB= 80mA 1.2 V

VCE=10V, IC= 50mA

Transition frequency fT 100 MHz
f=30MHz

CLASSIFICATION OF hFE(1)
Rank L H J
Range 120-200 200-350 300-400

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Typical Characterisitics SS8050
Static Characteristic hFE —— IC
140 1000
COMMON EMITTER
500uA COMMON
VCE=1V
120 EMITTER
450uA Ta=25℃ Ta=100℃
(mA)

hFE
400uA 300
100
IC

350uA Ta=25℃

DC CURRENT GAIN
COLLECTOR CURRENT

80
300uA
100
250uA
60
200uA

40 150uA
30
100uA
20
IB=50uA

0 10
0.0 0.5 1.0 1.5 2.0 2.5 1 3 10 30 100 300 1000 1500

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA)

VCEsat —— IC VBEsat —— IC
1000 1.2

300
COLLECTOR-EMITTER SATURATION

1.0

BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
Ta=100℃
VOLTAGE VCEsat (mV)

100
0.8 Ta=25℃

30 Ta=25℃
Ta=100℃
0.6
10

0.4
3

β=10 β=10
1 0.2
1 3 10 30 100 300 1000 1500 1 3 10 30 100 300 1000 1500
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)

VBE —— IC Cob/ Cib —— VCB/ VEB

1500 200
1000 f=1MHz
100
IE=0/IC=0
Cib Ta=25℃
300
(pF)
(mA)

Ta=100℃
100 30
C
IC

Cob
CAPACITANCE
COLLCETOR CURRENT

30
10

Ta=25℃
10

3
3
COMMON EMITTER
VCE=1V
1 1
0.2 0.4 0.6 0.8 1.0 1.2 0.1 0.3 1 3 10 20
BASE-EMMITER VOLTAGE VBE (V) REVERSE VOLTAGE V (V)

fT —— IC PC —— Ta
1000 350

300
(MHz)

COLLECTOR POWER DISSIPATION

300

250
fT

100
PC (mW)
TRANSITION FREQUENCY

200

30
150

10
100

3 50
VCE=10V
Ta=25℃
1 0
1 3 10 30 100 0 25 50 75 100 125 150

COLLECTOR CURRENT IC (mA) AMBIENT TEMPERATURE Ta (℃ )

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