Piezoresistive sensors

 Perform a basic bridge analysis, specifically,  Explain the difference between longitudinal, transverse,
 find output voltage as a function of input voltage and center, and boundary stress/strain.
the various resistances, and  For a given piezoresistive sensor, use the above concepts
 find the relationship between output voltage and and objectives to find
changes in resistance.  the sensor’s bridge equation,
 Find changes in resistance of a piezoresistive material  values of ΔR/R for each resistor,
undergoing deformation due to  value of Δeo/ei, and
 changes in geometry and/or  the transducer’s sensitivity
 changes in resistivity
 Calculate the gage factor for a piezoresitor using
piezoresistance coefficients and/or elastoresistance
coefficients where appropriate
 Use the idea of gage factor to explain how the placement
and locations of piezoresitors can affect a device’s
sensitivity

Piezoresistance

stretching

bending

Electrical resistance changes with mechanical

deformation (strain) twisting

piezoresitive
sensor

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Piezoresistance

Electrical resistance changes with mechanical

deformation (strain)

mechanical  piezoresitive voltage

input sensor output

Wheatstone bridge analysis

Te toca a ti

Find the relationship between the input and

output voltages for the bridge shown. Assume
im is zero.

Find the relationship between

R1, R2, R3, and R4 for eo = 0.

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Wheatstone bridge analysis

Te toca a ti

Bridge balancing

Full bridge:

Half bridge:

What is the relation between a change in resistance ΔR and the

output voltage eo?

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Gage factors and the piezoresistive effect

What is the relation between deformation and

resistance?

Metals Semiconductors

Changes in __________ Changes in __________

dominate dominate

Gage factors for strain gages

Piezoresistors made of metals are usually Te toca a ti

used in strain gages responding to
uniaxial strain.
Find the gage factor for a strain gage subject to
uniaxial strain applied to an isotropic material.
original area A, (Hint: you can neglect products of length changes;
height h and width w i.e., ΔhΔw ≈ 0.)
new area,
height hh and
width ww
L + L L

applied
stress 

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Gage factors for semiconductors

Recall that in semiconductors changes in Stress formulation:

resistivity dominate resistance changes
upon deformation.

R  L A πL and πT and are the ________________________________

  
R  L A
• L–
• T–

Strain formulation:

γL and γ T and are the ________________________________

Gage factors for semiconductors

Te toca a ti
Find the gage factor for a typical semiconductor device. Use the elastoresistance coefficients in your
formulation. (Hints: Recall that in semiconductors changes in resistivity dominate resistance changes
upon deformation. How will you model the stress/strain?)

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Gage factor as figure of merit

Gage factor is a figure of merit that

• helps us decide ___________________________________________________________

• helps us decide ___________________________________________________________

Material Gage factor, F

Metals 2-5

Cermets (Ceramic-metal mixtures) 5-50

Silicon and germanium 70-135

Physical placement and orientation of piezoresistors

1 2

3 4

eo

ei

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Physical placement and orientation of piezoresistors

eo F
  1   2   3   4 
ei 4

Device case study: Omega PX409 pressure transducer

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Device case study: Omega PX409 pressure transducer

Some definitions

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 Schematics of the sensor

Designing for a given sensitivity

We would like to design a pressure sensor with a 0–1 MPa (145 psi) span, 0–100 mV full scale
output, a 10 VDC excitation, and p-Si piezoresistors.

What is the sensitivity?

How do we design the senor

to achieve this sensitivity?

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 Location of piezoresistors

Where should we place the piezoresistors on the

diaphragm? σC –
σB –

Typical values at max deflection:

σC = , σB =
εC = , εB =

Designing for a given sensitivity

Next, let’s find the change in output voltage corresponding to resistors in these locations.

Typical values of stress, strain, and elastoresistance coefficients:

σC = 45.0 MPa, σB = 22.5 MPa γL = 120 <110>

εC = 152 × 10-6, εB = -17 × 10-6 γT = -54 <110>

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 Designing for a given sensitivity

Te toca a ti

Find the values of ΔR2/R and

ΔR4/R using the same assumed
values of stress, strain, and
elastoresistance.

Typical values of stress, strain, and elastoresistance coefficients:

σC = 45.0 MPa, σB = 22.5 MPa γL = 120 <110>

εC = 152 × 10-6, εB = -17 × 10-6 γT = -54 <110>

Designing for a given sensitivity

Requirements:

•
•
•
•

η=

eo =

ei
=


 eo 

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Attenuation of output

__________  ________
KIA =

Rf
The gain is Rf

voltage signal Ro Ro
K= from bridge 
 transducer

 output
=

K=

Te toca a ti

Select two resistors (es decir, Rf y R0) from the available resistors below
to achieve K = (Rf/R0)2 = 0.682.

Readily-obtained resistors for use in an op-amp circuit (Ohms)

1 8.2 22 56 150 390
1.5 9.1 24 62 160 430
2.7 10 27 68 180 470
4.3 11 30 75 200 510
4.7 12 33 82 220 560
5.1 13 36 91 240 620
5.6 15 39 100 270 680
6.2 16 43 110 300 750
6.8 18 47 120 330 820
7.5 20 51 130 360 910

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Attenuation of output

The amplifier goes into the signal conditioning

compartment of the transducer
Rf
Rf

voltage signal Ro Ro
from bridge 
 transducer

 output

Te toca a ti

A configuration of p-Si resistors on a

square diaphragm is suggested in
which two resistors in series are used
to sense the maximum stress, σC, as
shown in the figure. Find
1b a. the new bridge equation (i.e., eo
second resistor  1a
in series in terms of ei and the various
3a resistances),
3b
b. ΔR/R for each resistor,
c. Δeo/ei, and
d. the transducer sensitivity (with
no amplifier circuit)

Assume the same dimensions,

sensor requirements, materials, and
stress/strain values as in the case
study.

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