High Performance, High Peak Pulse Current TVS Diodes For Power Line Protection

Download as pdf or txt
Download as pdf or txt
You are on page 1of 2

Product News 2017-09

DF2SxxP2 series

High performance, high peak pulse current


TVS diodes for power line protection
"DF2SxxP2 series" is high-performance and high-peak-pulse TVS diode, which
protects equipment from ESD and noises, which come from power line or
quick charging.
Application of Toshibaʼs original Zener diode process to the DF2SxxP2 series
has lowered dynamic resistance to 80 % that of existing products[1], securing
instant absorption of electrostatic discharge (ESD) and noise. The diodes also
realize a high peak pulse current rating about 32 times larger than that off
[1][2]

existing products , which contributes to system reliability, while keeping


[1]

electrostatic discharge unchanged at 30 kV. SOD-963


SOD 963 SOD 323
SOD-323
The new diodes protect the power lines of smartphones and tablets by (CST2C) (USC)
suppressing malfunctions and damage from ESD, noise that enters via the
power cord and signal cable, and transient voltage at the time of turning
equipment on or off. They can also be used to protect the USB Type-C™
[3]

charging lines (VBUS=5 V to 20 V) that will be widely used in the future.

Features
• High peak pulse current
• Support for three-kind power supply line voltages: 5 V, 12 V and 20 V lines
• Two package types: SOD-963 package of small and thin [CST2C, 1.6×0.8 mm, t=0.48 mm (typ.)]
               SOD-323 standard package [USC, 2.5×1.25 mm, t=0.9 mm (typ.)]

Applications
• Mobile devices power supply connector of
smart phone, tablet, Laptop PC and portable battery pack ,etc.
• Equipment with the USB connector of
projector, printer, DSC, POS, Tester and LCD display, etc.
Smartphones Tablets Laptop PCs

Product Specifications
(@Ta=25˚C)

Package Absolute maximum ratings Electrical characterictics


Power supply
Electrostatic Peak pulse Reverse breakdown voltage Dynamic resistance
Part number line voltage Name Size
discharge current VBR RDYN[4]
(V) (Toshibaʼs name) typ.
VESD[3] IPP typ. typ.
(mm)
(kV) (A) (V) (Ω)
DF2S6P2CTC 5 80 6.7 0.08
SOD-963 1.6×0.8,
DF2S14P2CTC 12 ±30 50 13.5 0.08
(CST2C) t=0.48
DF2S23P2CTC 20 14 24.1 0.13
DF2S6P2FU 5 80 6.7 0.08
SOD-323 2.5×1.25,
DF2S14P2FU 12 ±30 50 13.5 0.08
(USC) t=0.9
DF2S23P2FU 20 14 24.1 0.13

Notes:
[1] Compared with the existing 5 V line product, “DF2S6.8ASL”
[2] Compared with the existing 5 V line product. The peak pulse current rating differs depending on the voltage class.
[3] USB Type-C is a trademark of USB Implementers Forum, Inc.
[4] @IEC61000-4-2 (contact discharge)
[5] @TLP parameter: ZO=50 Ω, tp=100 ns, tr=300 ps, averaging window t1=30 ns to t2=60 ns
1/2 PE317090008A
Equivalent Circuit

1: Cathode
1 2 2: Anode

Application Circuit Example

USB Type-C
Receptacle
connector
RX2+ GND

TX2+ GND

DF10G5M4N
VBUS TX2-
VBUS RX2-

USB3.0/3.1
SBU1

CC2

DF6D6UFE
D+
D-
D+

D-

USB2.0 DF2SxxP2 series


SBU2
CC1
GND TX1+ TX1- VBUS

GND RX1+ RX1- VBUS

DF10G5M4N

USB3.0/3.1

VBUS line protection of USB Type-C


The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required,
especially at the mass-production design stage. Toshiba Electronic Devices & Storage Corporation does not grant any
license to any industrial property rights by providing these examples of application circuits.

Before creating and producing designs and using, customers must also refer to and comply with the latest versions of
all relevant information of this document and the instructions for the application that Product will be used with or for.

https://toshiba.semicon-storage.com/ © 2017 Toshiba Electronic Devices & Storage Corporation 2017-09 Issue
2/2 PE317090008A

You might also like