2SD768(K)

Silicon NPN Epitaxial

Application

Medium speed and power switching complementary pair with 2SB727(K)

Outline

TO-220AB

1
1. Base
2. Collector
(Flange)
1
2 3 3. Emitter 3 kΩ 200 Ω
(Typ) (Typ)
3

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit
Collector to base voltage VCBO 120 V
Collector to emitter voltage VCEO 120 V
Emitter to base voltage VEBO 7 V
Collector current IC 6 A
Collector peak current I C(peak) 10 A
1
Collector power dissipation PC * 40 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
2SD768(K)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown V(BR)CEO 120 — — V I C = 25 mA, RBE = ∞
voltage
Emitter to base breakdown V(BR)EBO 7 — — V I E = 50 mA, IC = 0
voltage
Collector cutoff current I CBO — — 100 µA VCB = 120 V, IE = 0
I CEO — — 10 µA VCE = 100 V, RBE=∞
DC current transfer ratio hFE 1000 — 20000 VCE = 3 V, IC = 3 A*1
Collector to emitter saturation VCE(sat)1 — — 1.5 V I C = 3 A, IB = 6 mA*1
voltage VCE(sat)2 — — 3 V I C = 6A, IB = 60 mA*1
Base to emitter saturation VBE(sat)1 — — 2 V I C = 3 A, IB = 6 mA*1
voltage VBE(sat)2 — — 3.5 V I C = 6 A, IB = 60 mA*1
Turn on time t on — 1.0 — µs I C = 3 A, IB1 = –IB2 = 6 mA
Turn off time t off — 3.0 — µs I C = 3 A, IB1 = –IB2 = 6 mA
Note: 1. Pulse test.

Maximum Collector Dissipation

Curve
60 Area of Safe Operation
30
Collector power dissipation PC (W)

iC(peak) 1 µs
10
10
Collector current IC (A)

0µ

40 IC(max)
s

3
PW
DC

1 m 0 ms
=1

1.0
Op

s
era

20
tio

0.3
n(T

Ta = 25°C
C

1 shot pulse
=2

0.1
5°C
)

0.03
0 50 100 150 1 3 10 30 100 300 1,000
Case temperature TC (°C) Collector to emitter voltage VCE (V)

2
 2SD768(K)

DC Current Transfer Ratio

Typical Output Characteristics vs. Collector Current
10 10,000
TC = 25°C

DC current transfer ratio hFE

8
Collector current IC (A)

3,000 °C
75
=
6 Ta
1.2 °C
1,000 25
5°
1.0 C
0.8 –2 VCE = 3 V
4 0.6
Pulse
0.4
2 300

0.2 mA
IB = 0
100
0 1 2 3 4 5 0.1 0.3 1.0 3 10
Collector to emitter voltage VCE (V) Collector current IC (A)

Saturation Voltage
vs. Collector Current Switching Time vs. Collector Current
Collector to emitter saturation voltage VCE(sat) (V)

10 10
Base to emitter sauration voltage VBE(sat) (V)

tstg
3
TC = 25°C
Switching time t (µs)

3 ton
VBE(sat) IC/IB = 200 1.0
500 tf
= 5 00
1.0 I C/I B 0.3
200 VCC = 30V
VCE(sat) IC = 500 IB1 = –500 IB2
0.1
Ta = 25°C
0.3
0.03

0.1 0.01
0.1 0.3 1.0 3 10 0.1 0.3 1.0 3 10
Collector current IC (A) Collector current IC (A)

3
2SD768(K)

Transient Thermal Resistance

10

Thermal resistance θj-c (°C/W)

1 to 1,000 s
3

1.0 1 to 1,000 ms

0.3
TC = 25°C
0.1

0.03

0.01
1 10 100 1,000 (s)

1 10 100 1,000 (ms)

Time t

4
 Unit: mm

11.5 MAX

10.16 ± 0.2 4.44 ± 0.2

2.79 ± 0.2

9.5
φ 3.6 -0.08
+0.1
1.26 ± 0.15
8.0

–0.1
+0.2
6.4

15.0 ± 0.3
1.27
18.5 ± 0.5

2.7 MAX

1.5 MAX
14.0 ± 0.5
7.8 ± 0.5

0.76 ± 0.1

2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1

Hitachi Code TO-220AB

JEDEC Conforms
EIAJ Conforms
Weight (reference value) 1.8 g
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