High Input-impedance Amplifier Circuits

Using bipolar transistors, integrated circuits and f.e.ts in a.c. amplifiers

presenting low loading on the signal source

by T. D. Towers,* M.B.E., M.I.E.E.

In the ordinary course, engineers do not ling and the emitter decoupling capacitors With germanium transistors, hje tended to
find many requirements for low-frequency, present negligible impedance, three factors fall almost linearly with current below ImA;
high input-impedance amplifiers. This is control the low-frequency impedance seen so that little use could be made of reducing
fortunate, because the "ordinary" bipolar looking into the amplifier input terminal. the emitter current to put up input imped
transistor, with which they have done most of These are the shunt impedances presented ance. Modern silicon transistors generally
their circuitry for a decade now, is basically by the emitter circuit, by the base-bias resis hold up their current gain to much lower
a low-impedance device. The "old-fashioned" tors and by the collector circuit, all in current levels than germanium. With devices
thermionic valve had one big advantage; parallel across the input (both positive and of the common BC107, 8, 9 famlly, for ex
with comparatively simple circuit arrange negative supply rails being a.c. grounded). ample, a current gain of 100 at 100,uA makes
ments you could easily achieve input imped possible a transistor a.f. input resistance of
.
ances of over 100MQ. With bipolar transis 25-50kQ.
Emitter circuit shunt impedance: So far
tors, quite specialized circuits had to be
as it is governed by the emitter circuit, the
devised to get above even 100kQ. But things
low frequency input impedance of the High input impedance with input trans
are changing again; we are moving into an
transistor itself is given approximately by former or series resistor: Before we go on
age where the f.e.t. and the monolithic inte
Rin=1bb,+25hjelIE, where rhO' is the device to examine other high-impedance circuit
grated circuit are displacing bipolar transis
"base spreading resistance" (for transistors arrangements, we should not forget that you
tors-just as transistors did valves.
used in low-level circuits usually 30 to 300Q), can use a transformer with a high step-down
hj. is the common-emitter current gain (nowa turns ratio. Such a .transformer has the ad
High input impedance with days usually 50 to 250), and lE is the emitter vantage of isolation, but, to get high imped
bipolar transistors current in mA. For a typical low-level stage ance at low frequencies, its size and cost can
with lE set 'about 1mA, we find Rin typically become prohibitive. The upper frequeney
Consider the conventional common-emitter 1 to 2kQ. The formula for Rin shows that you limiimay
amplifier stage shown in Fig. 1(a). At fre can increase the device input impedance by tances. Careful screening is called for, and it
quencies where the input and output coup- reducing the emitter current, provided cur is sometimes difficult tQ provide simultan
*Newmarker Transisrors Lrd. rent gain does not fall at the same time. eously minimum noise and high impedance.
,.
Fig. 1. Arrangements for reducing shunting of emitter circuits on transistor input impedance. (a) Basic common-emitter amplifier operated ac low bias
current. (b) Common-collector (emitter10llower) single transistor. (c) Compound two-transistor Darlington-pair common-collector. (d) Modified
Darlington-pair common-collector. (e) Bootstrapped Darlington-pair. (f) and (g) Complementary np-n/p-n-p compound emitter10llower circuits.
(h) Transistor-loaded emitter-follower.

Rc
Rs
Tr t--o Tr
Cout
o-J
Cin
1---0 t--o
Rs Cout Co ut RE Cout
RE CE RE RE '
RE

(a) (b) (c) (d)

Tr CE Tr1
1

+---4--f r-o
Cout
t--o
Cout

(e) (0 (g) (h)

Wireless World, July 1968 197
 Reducing shunting effect of base bias
resistors on input impedance: So far, we
RS1
have ignored the effect on input impedance of
RS . RS any base bias resistor networks shunted across
Tr RS2 Tr Tr the transistor input. Fig. 2(a), showing an
elementary single-resistor bias circuit, illus
0-1 trates the problem. You will see that Rs is
Cin
directly across the input (both supply rails
I----<> I----<> being a.c. earthed). Obviously the total Rio
Cout Cout
RE
cannot exceed RB.
RE The conventional technique to raise the
effective a.c. resistance of RB without raising
(a) ( b) (c) its d.c. value is to bootstrap it as shown in
Fig. 2(b). RB is replaced by two resistances
RBl and RB2 of the same total resistance. Pro
vided RBl and RB2 are large compared with
Rs RE, the transistor emitter-follower action
makes the top end of RB2 move up and down
with its bottom end. Thus its a.c. impedance is
Tr
Rx raised effectively by the current gain of the
0-1 0-1 transistor.
Cin Cin The more thermally-stable conventional
Rs, two-resistor bias network of Fig. 2(c) can also
C s I----<> be bootstrapped for high impedance. Fig. 2(d)
Cout shows an arrangement using a single bootstrap
RS' RE capacitor, CB, in which the resistance Rx in
RS2 series with the base can be low value for ther
mal stability, but have high effective imped
Cd) (e) ance so as not to shunt the input a.c. signal.
Fig. 2. Reducing the shunting of base bias resistors on input impedande. (a) Basic single-resistor Fig. 2(e) shows a two-capacitor arrangement
transistor bias circuit. (b) Bootstrapping single bias resistor by capacitance feedba ck to its centre. where both top and bottom bias resistors are
(c) Basic two-resistor base bias circuit. (d) Single-capacitor method of /)Qotslrapping two-resistor capacitor-bootstrapped by splitting each as
bias network. (e) Two-capacitor method of bootstrapping two-resistor bias network. explained for Fig. 2(b) above.
In general, the bootstrap capacitance values
must be large enough to present negligible
One other simple approach is to accept out having to go to a higher rail voltage. impedance at the lowest frequency, fo, to
the intrinsic low input resistance of the tran The emitter current of Tn, being the base be handled. A useful guide is to make CB
greater than 1O/(foRB), where Rn is the bias
sistor and achieve the required high input current of Tr2, is usu ally low: typically of
resistor being bootstrapped.
resistance by using a series resistor to the the order of 1 - 5 pA only. Trt should be a
input. The main objection to this is the high transistor with high gain at low current,
Reducing shunting effect of transistor
noise level likely to arise from the large value such as the 2N930 wi th hj. greater than 100
collector output resistance: From the con
series resistor. at 1O,uA. Some designers raise the standing
ventional low-frequency T-equivalent circuit
current in Trt with a separate emitter bias of the transistor in the common-collector
resistor, RE', in Fig. 1 (d); This shunts the configuration with emitter resistor, RE, shown
Reducing shunting effect of emitter
input impedance of T n , but its shunt effect in Fig. 3(a), you can see that the internal collec
circuits on input impedance: Going back
on the overall input impedance may be more tor resistance, re, shunts the signal path. At
to the common-emitter stage of Fig. lea), if
than offset by the increase in hj" due to the low current levels with modern transistors,
we remove the emitter bias resistor decoup
higher Tn bias current. Usually RE' is made re usually lies between 1 and 5MQ, so that it
ling capacitance, CE, the transistor input
5 to 20 times RE. is difficult to reach higher input impedances
impedance becomes Rin=Tbb+hj, (25/lE+RE).
To reduce the loading 'Of RE on the input, than re unless it too is bootstrapped. Fig. 3(b)
This shows that we can increase the input
you can use the bOots trap feedback arrange shows the basic arrangement for this, where a
impedance by using an undecoupled emitter
ment of Fig. lee), where the bottom of RE' is . resistance, Rc, is inserted between the collec
resistor. It would seem that you could in
connected to the top of.RE. By the. emitter tor and h.t. (to isolate re from earth a.c.-wise)
crease Rin indefinitely by increasing RE, but,
when RE rises above about one-tenth of the follower action of TT2, the lower end of RE' and a capacitor, CF, to the collector (and thus
collector load resistance, Rc, the voltage gain
moves with its top, 'and its resistance value is the outer end of re) feeds back in phase signals
of the common-emitter stage approaches effectively multiplied by th current gain of from the top end of the emitter resistance.
Rc/RE. The gain thus falls to unity when Tn (provided, as is usually the case, RE is This raises the effective a.c. impedance of re
RE=Rc. This is why designers looking for small compared with RE) With silicon tran and reduces its shunting effect on the input
high transistor input impedance tend to use sistors, the VBE (d.c.) of Tr2 is approximately signal. If possible, the collector bias resis
the alternative near-unity-gain common O.6V, so that RE' is fixed by the selected bias tance; Rc, value should be at least ten times
collector arrangement of Fig. 1 Cb). By using current, lE!, of Tn as RE,=0.6/lE' (ignoring RE, but, if only a limited d.c. supply voltage is
silicon transistors with high gain at low cur the negligible base current into Tn). available, this may not be possible, unless we
rent, it is possible to increase RE to a value Combinations of ri-p-n and p-n-p transistors are using a multiple emitter-follower, as
giving input impedances of the order of permit other arrangements for bootstrapping explained previously in Figs. 1(c)-(e), where
several thousand ohms with this simple up the effective value of the' emitter resistor RE is relatively small.
arrangement. in an emitter follower. For example, in both Fig. 3(c) illustrates a circuit using a separate
Unless you go to a very high rail voltage, Fig. l(f) and leg), it can be shown that Rio transistor, Tn, to bootstrap the Tn collector
even when you resort to low bias currents has a high value give approximately by output resistance without excessive loading
you are limited in how high you can rais Rin = hid hj,2 RE. . of its emitter output. The a.c. voltage at the
the value of RE. You can get round this with Another elegant circuit for providing a top of RE is transferred via CF and the base
the Darlington compound-emitter-follower high-resistance emitter load in an emitter emitter of Tn to the collector of Tn.
arrangement of Fig. l(c). Here, then; follower without high rail volt ages is shown It is also possible to bootstrap the base
Rin=hjdhj,lRE approx., and you can see in Fig. l(h). Here the output resistance of bias resistor and the collector output resis
that a.c.-wise by adding the extra transistor Tn (of the order of megohms) functions as an tance at the same time with a single capacitor
you have effectively multiplied RE by hj,2 emitter load to Tn ano makes possible an over as in the simple circuit arrangement of
without raising its d.c. value, and thus with- all input resistance oer lOM.!/. Fig. 3(d).

198 www.keith-snook.info - Wireless World July 1968

 Base rb
One aspect of bootstrapping with capacitors r",
is that high input impedance circuits tend to
be operated 'at low transistor bias currents, () rc
Emitter
and the leakage currents in ordinary alumin RE
ium electrolytic capacitors can upset bias ColLector
conditions drastically. For this reason, you
will 'often find low-leakage tantalum cap aci
tors specified, where the total capacitance
required is beyond the range of solid dielectric RF RC
types.
Practical high-impedance transistor
amplifiers: Fig. 4(a) shows a simple single
CF CF CF
transistor, emitter-follower, high input imped <>--i
ance amplifier operating at a low collector Cin
current of about 100, and with bootstrap I----<' I--<>
ping of base-bias resistors and collector out <::Out Cout Cout
RE RE RE
put resistance. These techniques produce an
input impedance down to below 50Hz not less
than O.5MQ. (b) Cc) (d)
For input impedances greater than about Fig. 3. Reducing shunting rJtransistor collector output resistance on input impedance. (a) T
1MQ, usually two stages are necessary with equivalent circuit pi com1l'!J)" collector transistor with external emitter resistor, RE. (b) Bootstrapping
bipolar transistors. Fig. 4(b) is a typical cir r,via capacitor fr()meme:r.(c) Bootstrapping r,via buffer transistor. (d) Simultaneous
cuit with an input resistance of 1.5MQ and an bootstrapping of r,and I!s;
output resistance of only 30Q. It employs an Fig. 4. High-inp1.ft tmpeda nce amplifiers. (a) Single-transistor amplifier with Rin greater than
n-p-n/p-n-p direct-coupled pair with boot 0.5M Qdown to 50 Jfz. (b) Two"stage amplifier with 1. 5M Qinput and 30 Qoutput resistances.
strapping of base bias resistors and emitter (c) Two-stage 10'1 Qcircuit with boolslrapping of all three shunt circuits. (d) Three-stage 300MQ
resistor. circuit with bandwidtltO:5 Hz-2,000 Hz. (e) Four-stage 1,000MQ circuit down to 10 Hz.
Two stages can give an input impedance of
+1 8V +9V
the order of 10MQ, as, for example, the cas
caded emitter follower circuit of Fig. 4(c) by 2M l80k
General Electric Co, U.S.A. This employs
bootstrapping of all three shunt elements.
Cl and C2 values depend on the lowest fre
quency, fo, to be passed by the amplifier and
In
can be selected at the nearest preferred values . o--f ll---+-""""'"
O'l,u l,u
to Cl=;=1!(150fo) and C2=1! (50fo!,), Output
Adding a third stage, as for example in
......,...
.. -.-fI
... J---<j
10,u
Fig. 4(d), makes input impedances in the 1 0,u 50,u
220k l2k .. 1 0k 3'3k
100MQ range possible. With the capacitor
oV oV
values shown, the measured input impedance
was about 300MQ for f=0.5 to 2kHz.
() (b)
About the limit you can ordinarily push
bipolar transistor circuits up to is 1,000MQ
+28V +28V
input resistance, although circuits up to
4301<. 5-6V
8 X 1011 Q have been constructed. For example, zener
G. W. Horn in "Feedback reduces bio probe's
input capacitance" in Electronics, March 18,
1968, pp. 97-98, describes a circuit to give
20,000MQ input resistance shunted by only
0.02pF. A less ambitious example with only
1,000MQ input resistance is given in Fig.
4(e) to illustrate the various bootstrapping
techniques used. The approximate value of
the input resistance is hje! hje2 hjd hj<4R, where
R is the parallel combination of the 1.5kQ
emitter resistance of TTJ and the amplifier lM
load resistance. Values of Rin= 1,000MQ at oV oV
10Hz and above were obtained dropping to
50MQ at 1.5 Hz. .(c) Cd)

-1 0V
33k l'5k 470

F E T.
. .high input-impedance OA95
amplifiers
100,u
The bipolar transistor has a low inherent Tr4
input resistance (1- 50kQ) and we have seen BFY51

that amplifier input impedances above 1MQ

can be obtained only with quite complex tran
sistor circuits. The f.e.t. on the other hand has 39k
a high inhereent input resistance (from 109 Q
200,u
upwards with modern devices). Consequently,
(e)
only simple f.e.t. amplifier circuits are needed
to get input impedances at a.f. from 10 to 1 0k
+10V
1,000MQ, while more complex circuits can

Wireless World July 1968 - www.keith-snook.info 199

 +12V +12V
easily giv.e up to 1,000,000MD. The boot
RC strapping techniques described earlier for
12k
bipolar transistors apply equally to f.e.ts,
NKT0112 whether p- or n-channel, junction- or
insulated-gate, depletion- or enhancement
o-t o-t mode types. The n-channel, depletion, junc
0'01,u 0,01fL
tion f.e.t. is the commonest in use at the time of
f--o
(a) 5M (b) 5M 10,u writing, and most circuitry will be illustrated
100,u in terms of this.
oV oV

Single stage f.e.t. high input impedance

+ 12V +12V
circuits: If you want an input impedance of
only a few megohms, you can use an n-channel
1M
depletion f.e.t. in the common source arrange
o-t o-t ment for which a typical circuit is given in
01,u 0'1,u Fig. 5(a). The NKTOl12 here has a typical
RG Vp= 1.0V, IDss= lmA, and gmo= 1.5mA/V,
1M r-o f--o
(c) 10,u (d) 10,u and is set up at a bias current of O.5mA, giving
10k a voltage gain of about 15 times with an a.f.
150k
input impedance of 5MD shunted by about
OV oV
30pF.
In the common-drain or source-follower
circuit of Fig. 5(b), while the input resistance is
Fig.S. Single-stageJ.e.t. high-input-impedance amplifiers. (a) Common-source amplifier with input still only 5MD, the shunt capacitance has been
impedance ofSM D shunted by 3 0pF. (b) Common..drain amplifier with input impedance of S M D reduces to about 2pF at the expense of volt
shunted by 2pF. (c ) Common..drain temperature-stable amplifier with ISM D, SpF input imped age gain, A.=gmRs/(1 +gmRs) which has been
ance. (d) Capacitor-boots trapped amplifier with input impedance ofSM D, 3pF. reduced to 0.7 times. The 5M D input-resis
tance-controlling gate bias resistor can be
increased to 10 or even 15MD, but gate leak
age currents then make the circuit sensitive
+12V + 1 2V
to temperature.
Tr 2
1M ut 2'2M
15k
2N718
The source-follower circuit of Fig. 5(c)
with the gate-bias resistor bootstrapped gives
.
Inp
5,u I
I
Tr 1
2N2606
high input impedance with better high
I temperature stability, because the gate resis
0'01,u I
1 tor network has a relatively low d.c. resistance.
I With RG at IMD as shown in the diagram,
J, 22M Zin is 15MD shunted by Cin=5pF. Increasing
45k RL
10k RG to lOMD raises Rin to 150MD without
100,u affecting Cin, but the circuit becomes tempera
I
I ture sensitive.
150k 1
200 1 An alternative arrangement sometimes
2'2k 1- used is shown in Fig. 5(d), where the 20!E
I
10V oV
capacitor bootstraps the IMD gate bias resis
tor to give an overall input impedance of
(a) (b)
approximately 5MD shunted by 3pF.

+ 12V +5V Multistage f.e.t. high input-impedance

amplifiers: For better temperature stability
and lower input shunt capacitance, the input
Input
f.e.t. can be cascaded with bipolar transistor
Input
stages, using also bootstrap feedback
techniques.

1M . An input resistance of 150MD shunted by

1M Output 5pF is obtained with the circuit of Fig 6(a),
which utilizes a common-source f.e.t., Tr!,
RC-coupled to a common-emitter transistor,
2'2k Tn, with overall feedback from transistor
8'2k 0'01,u 39k 5'6k Tn collector to f.e.t. source to provide the
oV -19V
necessary bootstrapping to reduce the shunt
ing effect of the 50MD gate bias resistance
(C) (d)
across the input. With a voltage gain of 26dB,
the amplifier has a bandwidth down to 10Hz
for any signal source resistance. The top end
6'8k
1M
Fig. 6. Multi-stage J.e.t. high-input-impedance
I-
Inp amplifiers. (a) 150MD, SpF input impedance
220p
__Hlh ut with RC-coupled J.e.t. and bipolar transistor.
10,u (b) 1,200MD, 3.SpF input impedance with
100.000 d.c.-coupled J.e.t. and transistor. (c) Low input
M
capacitance (OApF), high impedance (SMD)
(e)
d.c.-coupled J.e.t. and transistor. (d ) I,OOOMD,
1M 3'3k O.lpF input impedance four-stage m.o.s.f.e.t
oV
biological amplifier. (e ) I,OOO,OOOMD input
impedance m.o.s.f.e.t. amplifier.
200 www.keith-snook.info - Wirless World July [968
 up for posltlve feedback from the output Industrial Instruments Ltd, the Bromley, Kent,manu
R2 to the non-inverting input pin (3). The facturers of Transipack inverters, have been appointed
f.J.A U.K. agents for Vam-Atlas, the American company
2
702A approximate expression for the overall low
whose interests lie in the military static inverter field.
frequency input impedance is Ri.=AfIORA!A"
7
C1 3
6 Output where AfIO is the open loop voltage gain, The Venner Group have recently announced an agree
ment with Control Logic Inc., of Massachusetts, which
In AJ is the gain with feedback and RA is the. gives Venner manufacturing and sales rights for a
R3 input impedance into pin (3). By general family of integrated circuit logic cards and accessories.
C2 R4 operational amplifier theory, AJ can be This agreement applies exclusively in the U.K., the
shown to be approximately (RI +R2)!RI. Commonwealth and all E.F.T.A. countries.

R1 C4 For the pA702A, typically AfIO2,000, and S. Davall & Son Ltd, of 4 WadsworthRoad, Greenford,
RA=10k,Q. Two sets of circuit component Middlesex, have appointed agents I in France and
North America for the precision relays and associated
values are given below to produce input
Fig. 7. Connecting up an integrated circuit resistances of 2 and 6MQ.
components made by their manufacturing division,
Perivale Controls Co. Ltd. The agents are Crouzet S.A.,
monolithic operational amplifier to give high in Cl C2 C4 RI of Paris, for Common Market countries and Eastern
put resistance (2-6MQ). 1,uF 1,uF I
Electric Company, of Montreal, for canada and the
910pF 10kQ 91kQ
United States.
1,uF 4.7 f.J.F 1000pF 51kQ 100kQ
Standard Telephones & Cables Ltd, have been awarded
of the bandpass ranges from 500Hz for a
Rl R4 A. Ri. a contract by Hawker Siddeley Aviation, worth approxi
lOMQ source up to 50kHz for a 10kQ source. 82kQ 220kQ mately 250,000, to supply aerial systems for the
10 2MQ
The Siliconix circuit of Fig. 6(b) shows a Hawker Harrier V /STOL aircraft destined for service
51kQ 3 6MQ with the RAF.
p-channel f.e.t. d.c.-coupled to a bipolar tran
sistor to give Zi.=1,200MQ shunted by The phase-shift network, R4, C4, provides A 430,000 contract has been placed with the M.EL
3.5pF, with an overall voltage gain of 0.98, Equipment Company Ltd, by the Ministry of Techno
frequency stability. For best thermal stability,
logy on behalf of the Ministry of Defence (Army
and an output resistance of 600 Q. Here both RI + Rl should be made equal to R2. Department), for the supply of military radio equip
the gate bias resistor and the source resistor When f.e.t.-input operational amplifiers ment. The equipment comprises single sideband hJ.
are bootstrapped. become commonly available, they will have an transmitters L556 and radio telegraph adaptors L607.
An input impedance of 5MQ shunted only input terminal resistance, RA, of the order of
Racal Communications Ltd, of Western Road, Brack
by OApF is provided by the d.c.-coupled 10MQ. Looking back at the formula for boot nell, Berks., have received contracts to the value of lM
f.e.t./bipolar pair in the Ferranti circuit of strapped input resistance given for the bi for new submarine h.f. communication equipment
Fig. 6(c). It features overall bootstrapping of polar j.J.A702A, it will be seen that very high
for use by the Royal Navy.
both the gate bias resistor and the gate-drain overall input resistances can be expected in An order worth approximately 400,000 has been
capacitance to achieve the low input shunt the future with f.e.t. operational amplifiers. awarded to Standard Telephones and Cables Ltd, by the
capacitance. Italian Ministry o Defence, for instrument landing
The four-stage circuit of Fig. 6(d) given by systems to be installed at the airports of Rome, Turin,
Milan, Genoa, Venice and Naples.
R. E. Webb in "Field Effect Transistor for
Biological Amplifier" in Electronic Engineering, Cossor Electronics Ltd, of Harlow, Essex, have
December, 1965, pp.. 803-805, produces an received an order, worth approximately 250,000, for
input impedance greater than 1,000MQ . the supply and installation, at Stornoway, Isle of Lewis,
and Burrington, Devon, of two d ualhannel and two
with a shunt capacitance lessthanO.1pF. Using
singlehannel SSR 700 interrogator systems.
an n-channel depletion mosfet with a gate
leakage current of less than 10-11 A, it features
Announcements
The series of Philips colour television courses for
unity voltage gain with an output resistance of Henry's Radio Ltd, have opened an additional elec
service engineers, started in July 1967 by Combined
tronics centre at 309 Edgware Road, London W.2.
only 25Q. The amplifier and input connections Electronic Services Ltd, have ceased for the time being.
Over 1,000 people attended. Plans are now under way
have to be doubly screened. The internal
for a new series scheduled for the Autumn. The A licensing agreement has been completed between
screen is connected to the amplifier output courses will be of 4 days' duration and take place at the the Decca Navigator C01l1'any, London, and Inter
and the external screen to ground, thus re colour television school at C.E.S. Ltd, Waddon, Croy national Standard Electric Corporation, a subsidiary
ducing the stray capacitance to ground by the don, Surrey. of International Telephone and Telegraph of U.SA, to
same amount as the input resistance is in co-<>perate in the field of marine and commercial aviation
A one-day symposium on "The Numerical Solution electronics.
creased by the large overall feedback from . of Laplace's Equation" will be held at the John Dalton
the top of the 5.6kQ last emitter load resis College of Technology, Chester Street, Manchester l, on
8th July. Fee 4 15s. Thorn Electrical Industries (London) and International
tance.
Rectifier Corporation (California) have signed a 12-year
As the final f.e.t. example, the relatively
At the recent annual general meeting of the Radio & agreement to continue as joint ventures the six jointly
simple Mullard circuit of Fig. 6(e) gives an Electronic Component Manufacturers' Federation, owned semiconductor companies in Europe. Inter
input resistance of 1,000,000MQ with a volt the following result of the postal ballot for the election national Rectifiers will exercise management control
age gain of about 0.98 and an output resis of the Council was announced:- Belling & Lee (N. D. (receiving a management fee) and will provide tech
Bryce), A: F. Bulgin & Co. (R. A. Bulgin), Colvern (R. nical assistance and licences relating to semiconductor
tance of only 50Q. The f.e.t. 3.3kSJ source
F. Collinson), A. H. Hunt (S. H. Brewell), McMurdo products.
resistor is bootstrapped by the BCY72 tran Instrument Co. (F. W. Irons), Mullard (Dr. F. E. Jones,
sistor, as is also the 10 I I Q gate bias resistor elected chairman), Multicore Solders (R. Arbib), Painton Texas Instruments and Sony announced that the
via the 2 capacitor. & Co. (C. . Benham), and Standard Telephones & Japanese Government has approved the establishment
Cables (E. E. Bivand). of Texas Instruments Japan Ltd. Fifty per cent of the
capital is to be furnished by each of the companies,
The Institution of Electrical and Electronics Tech and semiconductor devices including integrated circuits
High input impedance with nician Engineers has decided to accept the City and and certain electrical control devices are to be-manu
Guilds of London Institute's Electrical Technicians'
i.c. operational amplifier factured.
Certificate with two endorsement certificates as satisfying "

the technical education requirements for election to the

Amphenol and Plessey recently signed an agreement
Engineers are now beginning to use inte class of Grad uate.
whereby the new Astro 348 connector range developed
grated circuit monolithic operational ampli by the Amphenol Corporation of Illinois is to be manu-
The Munich Fair and Exhibition Co. have announced .
fiers as complete circuit elements instead of that the fourth Electronica-the international trade
factured by the Plessey Company Ltd.
building up circuits with discrete bipolar exhibition of electronic components and related measur
transistors or f.e.ts. High input impedance ing and production equipment-will be held from 22nd GEC-ABI Telecommunications Ltd. of Coventry,
to 28th October, 1970. The third Electronica exhibition have won orders worth 250,000 for completely solid
can be obtained with these by the simple
takes place this year from 7th to 13th November. state 2 GHz and 7 GHz radio links and multiplex
expedient of putting the required input equipment in Hong Kong and Bahrain. The contracts
resistance in series with the amplifier input, An agreement has been reached, subject to contract, have been placed by Cable and Wireless Ltd.
which is a' virtual earth point. However, between RedifTusion Ltd and the Rank Organisation
Ltd, for the purchase by Rediffusion of the whole of
bootstrapping techniques can also be used Marconi Company, of Chelmsford, have won a contract
Rank's wired sound and television networks and the
as shown in Fig. 7. Here a standard Fair television set rental business associated with these relay valued at 700,000 to supply a completely new tele
child pA702A operational amplifier is set undertakings. vision system to the state ofBahia inBrazil.

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