My Notes

MY NOTES
INDUSTRIAL ELECTRONICS
Pnpn and other devices
The two-layer semiconductor diode has led to 3,4, and even 5-layer devices.
A family of four-layer pnpn devices will first be considered: the SCR (Silicon-Controlled
Recitifier), SCS (Silicon-Controlled Switch, GTO (gate turn-off switch), LASCR (Light-Activated
Switch), and the UJT (unijunction Transistor)
Those 4 are commonly referred to as THYRISTORS,
SCR (SILICON-CONTROLLED-RECTIFIER)
- the greatest interest within the family of pnpn devices.

- Was first introduced in 1956 by Bell Telephone Laboratories.
- Common applications: relay controls, time-delay circuits, regulated power suppliers, static
switches, motor controls, choppers, inverters, cycloconverters, battery, chargers, protective
circuits, heater controls, and phase controls.
SCRs have been designated to control powers as high as 10 MW with individual ratings as high
as 2000 A at 1800 V.
Frequency range of application: extended to about 50 kHz.
OPERATION
SCR is a rectifier constructed of a silicon material with a third terminal for control purposes.
Why SILICON?
Silicon was chosen because of its high temperature and power capabilities
The third terminal (Gate) determines when the rectifier switches from open-circuit to short-circuit state.
*It is not enough to simply forward bias the anode-cathode region
In the CONDUCTION REGION, the resistance of the SCR is typically 0.01 to 0.1 Ohms.
The REVERSE resistance is typically 100K Ohms or more.
If mag forward conduction ang kailangan I-establish:
The anode must be positive with respect to the cathode.
But hindi daw ito sufficient criterion para mag turn on ang SCR.
A pulse of sufficient magnitude must also be applied to the gate to establish a turn-on. ( )
A MORE DETAILED OPERATION
Ni split up dito yung 4 latyer na pnpn junction
Mpapansin natin na may npn and pnp junction sia.
So in a clearer viewpoint
Ganto ang kalalabasan nia:
Now for the discussion, I apply natin yung signal na nasa figure ng SCR.
Mpapansin natin sa interval na yung signal from 0 to t1 = 0. Where in Vg = 0 V at that time.

V gate = 0 V is equivalent to the gate terminal being grounded as shown in the figure.
For VBE2 = V gate = 0 V, ang base current na IB2 = 0, and I C2 will be approximately I CO. The base current
of Q 1 , I B1 = I C2 = I CO ay sobrang liit at hindi pa mg tturn on ang Q1 dito.
Parehong transistor ngayon ay therefore in the off state, resulting in a high impedance
between the collector and the emitter of each transistor and the open-circuit representation for the
controlled rectifier ay mkikita sa figure c.
At t = t 1 , a pulse of VG volts will appear at the SCR gate. The circuit

conditions established with this input are shown below.
Ang potential sa VG ay ni set sa malaking value (Assuming) para

mag-turn ON ang NPN transistor. Mpapansin din natin na ang (VBE2 = VG)
dahil parallel naman. Ang IC2 o collector current sa NPN transistor ay
mgkakaron ng sapat na value para magturn on ang PNP transistor.
Mpapansin din natin na (I B 1 = I C 2). Pagka turn on ni PNP transistor, mg
increase ang value ni IC1 at mg increase din si IB2 (sa malamang lamang).
At that case, nag increase nga din si IB2. Tataas din ngayon lalo ang value
ni IC2.
The resulting anode-to-cathode resistance (RSCR = V > IA) is then small

because IA is large, resulting in the short-circuit representation for the SCR.
The regenerative action described above results in SCRs having typical turn-on times of 0.1 ms to 1 ms.
However, high-power devices in the range 100 A to 400 A may have 10- to 25-ms turn-on times.
Another way to turn on SCR(Gate Triggering) :
by raising the temperature of the device.
Raising the anode-cathode-voltage to the breakover value.

NOW: How long is the turn-off time and how is turn-off accomplished?
An SCR cannot be turned off by simply removing the gate signal. Only a few special ones can be
turned off by applying a negative pulse to the gate terminal.
The two general methods for turning off an SCR:
Anode Current Interruption
Sa figure A, series
interruption ang tawag dito.
Sa Figure B, shunt
interruption naman.
Forced Commutation
Forcing of current through the SCR in the direction opposite to forward conduction.
Turn-off times of SCRs are typically 5 ms to 30 ms.
Sa figure A. meron tayong transistor Q1. Meron din tayong DC battery as VB. Meron ding pulse
generator to turn on or off the NPN transistor. When a positive pulse is fed sa IB ng transistor,
mgkakaroon ng low impedance sa collector at emitter junction. Ang battery potential ngayon will appear
directly as shown sa figure b kung saan ifforce nia ang current to flow in reverse sa conduction ng SCR.
Sa case na yun, turned off ngayon si SCR.
SCR Characteristics and Ratings
Forward breakover voltage V(BR)F* - is the voltage above which the SCR enters the conduction
region. Yung asterisk (*) will denote conditions
Pag O = open circuit from G to K
S = short circuit from G to K
R = resistor from G to K
V = fixed bias (voltage) from G to K
Holding current IH = the value of current below which the SCR switches from the conduction
state to the forward blocking region under stated conditions.
Forward and reverse blocking regions - are the regions corresponding to the open-circuit
condition for the controlled rectifier that block the flow of charge (current) from anode to cathode.
Reverse breakdown voltage - is equivalent to the Zener or avalanche region of the

fundamental two-layer semiconductor diode.
Obvious na ang characteristics ng isang SCR ay halos katulad din sa characteristics ng isang two-layer
diode. Ang naiba lang dito ang ang horizontal offshoot before entering the conduction region.
For the characteristic @ (IG = 0), VF must reach the largest required breakover voltage V (BR)F*
before the collapsing effect results and the SCR can enter the conduction region corresponding to the
on state.
Basically, when we increase the IG = 0 to IG1 or more, the SCR will more likely to fire at lower
voltages. The characteristics will begin to approach those of the basic p n junction diode.
Note: If the gate current is increased to I G1 the value of VF required for the conduction (VF1) is
considerably less.
IH drops with increase in IG.
Looking at the characteristics in a completely different sense, for a particular VF voltage, say VF2
we see that if the gate current is increased from IG = 0 to IG1 or more, the SCR will fire.
Parameters of SCR in data sheet
ton -turn on time
toff turn off time
TJ Junction temperature
TC Case temperature
EVERY SCR HAS DIFFERENT CASING ACCORDING TO APPLICATION.
Practical Applications: we consider five: a static switch, a phase-control system, a
battery charger, a temperature controller, and a single-source emergency-lighting system.
SILICON CONTROLLED SWITCH
SCS - a four layer pnpn device
*Addition of an anode gate
The characteristics of the device is essentially the same as those of an SCR.
The higher the anode gate current, the lower is the required anode-to-cathode voltage to turn the
device on.
The anode gate connection can be used to turn the device either on or off.
To turn on the device, a negative pulse must be applied to the anode gate terminal, whereas a positive
pulse is required to turn off the device.

a negative pulse will forward bias the base-to-emitter junction of the transistor Q1 thus turning it on.
This will result to a heavy Collector current Ic1 and then it will effectively turn on Q2. The SCS device will
then turn on.
On the other hand, a positive pulse will then reverse bias the base-to-emitter junction of Q1. At this
case, it will turn off, resulting to an off state SCS.
In general, triggering the anode gate current is larger in magnitude than that of the cathode gate
current.
For one representative SCS device, the triggering anode gate current is 1.5 mA, whereas the required
cathode gate current is 1 mA.
An advantage of the SCS over a corresponding SCR is the reduced turn-off time, typically within the
range 1 ms to 10 ms for the SCS and 5 ms to 30 ms for the SCR.
increased control and triggering sensitivity
a more predictable firing situation
SCS is limited to low power, current, and voltage ratings. Typical maximum anode currents range from
100 mA to 300 mA with dissipation (power) ratings of 100 mW to 500 mW.

SHOCKLEY DIODE
Four-layer pnpn diode with only two external terminals.
Characteristics: exactly the same as those encountered for the SCR with I G = 0.
the device is in the off state until the breakover voltage is reached. which time avalanche conditions
develop and the device turns on.
Application : Trigger Switch

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MY NOTES

Pnpn and other devices

- the greatest interest within the family of pnpn devices.

*It is not enough to simply forward bias the anode-cathode region

The REVERSE resistance is typically 100K Ohms or more.

If mag forward conduction ang kailangan I-establish:

The anode must be positive with respect to the cathode.

A MORE DETAILED OPERATION

Ni split up dito yung 4 latyer na pnpn junction

Mpapansin natin na may npn and pnp junction sia.

Ganto ang kalalabasan nia:

Mpapansin natin sa interval na yung signal from 0 to t1 = 0. Where in Vg = 0 V at that time.

At t = t 1 , a pulse of VG volts will appear at the SCR gate. The circuit

Ang potential sa VG ay ni set sa malaking value (Assuming) para

The resulting anode-to-cathode resistance (RSCR = V > IA) is then small

Another way to turn on SCR(Gate Triggering) :

by raising the temperature of the device.

Raising the anode-cathode-voltage to the breakover value.

The two general methods for turning off an SCR:

Anode Current Interruption

Turn-off times of SCRs are typically 5 ms to 30 ms.

Pag O = open circuit from G to K

S = short circuit from G to K

V = fixed bias (voltage) from G to K

Reverse breakdown voltage - is equivalent to the Zener or avalanche region of the

IH drops with increase in IG.

Parameters of SCR in data sheet

ton -turn on time

toff turn off time

EVERY SCR HAS DIFFERENT CASING ACCORDING TO APPLICATION.

Practical Applications: we consider five: a static switch, a phase-control system, a

battery charger, a temperature controller, and a single-source emergency-lighting system.

SILICON CONTROLLED SWITCH

SCS - a four layer pnpn device

*Addition of an anode gate

The characteristics of the device is essentially the same as those of an SCR.

pulse is required to turn off the device.

increased control and triggering sensitivity

a more predictable firing situation

100 mA to 300 mA with dissipation (power) ratings of 100 mW to 500 mW.

Four-layer pnpn diode with only two external terminals.

Application : Trigger Switch

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