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    Final Exam Formula Sheet

    Uploaded by

    Mohab Sameh
    The document is a 3-hour final exam for a semiconductor devices course. It contains instructions for the exam, a cheat sheet of key semiconductor physics equations, and outlines topics that may be covered on the exam including: [1] intrinsic and extrinsic semiconductor properties, [2] carrier transport equations, [3] PN junction physics, [4] diode DC and small signal models, and [5] BJT physics and small signal models. Students are allowed to use the attached cheat sheet during the closed-book exam.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Final Exam Formula Sheet

    Uploaded by

    Mohab Sameh
    410 views3 pages
    The document is a 3-hour final exam for a semiconductor devices course. It contains instructions for the exam, a cheat sheet of key semiconductor physics equations, and outlines topics that may be covered on the exam including: [1] intrinsic and extrinsic semiconductor properties, [2] carrier transport equations, [3] PN junction physics, [4] diode DC and small signal models, and [5] BJT physics and small signal models. Students are allowed to use the attached cheat sheet during the closed-book exam.

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    The document is a 3-hour final exam for a semiconductor devices course. It contains instructions for the exam, a cheat sheet of key semiconductor physics equations, and outlines topics that may be covered on the exam including: [1] intrinsic and extrinsic semiconductor properties, [2] carrier transport equations, [3] PN junction physics, [4] diode DC and small signal models, and [5] BJT physics and small signal models. Students are allowed to use the attached cheat sheet during the closed-book exam.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    410 views3 pages

    Final Exam Formula Sheet

    Uploaded by

    Mohab Sameh
    The document is a 3-hour final exam for a semiconductor devices course. It contains instructions for the exam, a cheat sheet of key semiconductor physics equations, and outlines topics that may be covered on the exam including: [1] intrinsic and extrinsic semiconductor properties, [2] carrier transport equations, [3] PN junction physics, [4] diode DC and small signal models, and [5] BJT physics and small signal models. Students are allowed to use the attached cheat sheet during the closed-book exam.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    At a glance
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    This exam covers semiconductor devices including diodes, BJTs, and MOSFETs. It provides equations and concepts for analyzing their DC and small signal behavior.

    The three regions of operation for a BJT are cutoff, active, and saturation depending on the bias conditions of the base-emitter and base-collector junctions.

    The three regions of operation for an NMOS transistor are cutoff, linear/triode, and saturation depending on the bias conditions of the gate-source junction and drain-source voltage.

    Final Exam Semiconductor Devices (ELCT503) Time allowed : Three hours

    Faculty of Information
    Engineering & Technology (IET)

    Electronics Engineering Dept.

    Semiconductor Devices: ELCT 503


    Final Exam (Fall 2014)

    Course Instructor: Dr. Hassan Mostafa

    Bar Code

    Instructions:
    1. Answer all questions.
    2. The exam consists of x questions in x pages including this page.
    3. A cheat sheet is attached at end of this booklet.
    4. The exam allowed time is Three hours.
    5. Electronic calculators are allowed.
    6. Clearly show all steps used in your solutions.
    7. This is a closed book exam.

    Please, do not write anything on this page


    Final Exam Semiconductor Devices (ELCT503) Time allowed : Three hours

    Cheat Sheet
    Intrinsic Si: Carriers Transport:
    Vbi
    e
    2

    N D xn N A x p
    2 2

    1 1 3
    F (E) mn vth2 kT
    e ( E EF )/kT 1 2 2 kT N D N A
    Vbi ln
    vn n E e ni 2
    n f(E)N(E)dE
    EC v p pE 2 N A N D
    xd Vbi
    N(E)
    4
    ( 2me )3 / 2(E Ec )1/ 2 J J n J p e nn p p E e ND N A
    h3
    e nn p p xd xn x p

    4 dn pn with forward bias V=Va:


    N(E) ( 2mh )3 / 2(Ev E)1/ 2 J n eDn
    h3 dx 2 N A N D
    xd Vbi V
    dp e ND N A
    J p eDp
    n p ni f(E)N(E)dE dx
    Cj
    e N A N D




    2N A N D Vbi V
    EC
    dn xd w
    (EC EF )/kT J n en nE eDn
    n NC e dx
    D p ni2 Dn ni2 qVa
    3/ 2
    dp J t e exp 1
    2 mn kT J p e p pE eDp L p N d Ln N a kT
    N C 12
    h
    2
    dx
    Ln Dn n L p D p p
    p NV e (EF EV )/kT Dn D p kT
    VT
    n p e qV
    2 mh kT
    3/ 2 I d J t A I sd exp a 1
    NV 2 Quasi Fermi Level: kT
    h
    2

    Reverse bias pn junction:


    Ei EFp
    Extrinsic Si: p p0 p ni exp
    kT D p ni2 Dn ni2
    n ni exp (E F Ei )/kT I (Va ) qA I sd
    L p N d Ln N a
    E Ei
    p ni exp (Ei EF )/kT n n0 n ni exp Fn
    kT Diffusion capacitance:
    Mass Action Law:
    Continuity equation: Ae 2 L p pn 0 eV
    pn n 2 Cd exp a
    n 1 Jn kT kT
    Gn Rn
    i

    Charge neutrality: t e x
    n N A p N D p 1 Jp
    G p R p
    dt e x
    pn junction:
    N A x p N D xn
    Final Exam Semiconductor Devices (ELCT503) Time allowed : Three hours

    Diode DC model: Transistor in Saturation region Constants:


    Exponential model: (VBE >= 0.7V) and (VBC >= 0.4V) KT = 0.026 eV
    at T=300OK
    I D2 VCE =0.2V
    VD 2 VD1 nVT * ln( )
    I D1 ICsat = forced IB
    q = 1.6 *10-19 C
    IE = IC + IB = (forced+1) IB
    0 = 8.85*10-12 F m-1
    Diode small signal model: BJT small signal:
    For Si:
    nV I
    rd T gm C Eg = 1.12 eV
    ID VT
    NC = 2.84*1019 cm-3
    V V
    BJT Physics: r T T NV = 3.08*1019 cm-3
    IB IC gm
    I pE I pE 1 Si = 11.7
    |V |
    IE I pE I nE D N W ro A Sio2 = 3.9
    1 n B B IC
    D p N EW E s = 4.05 V
    V V
    I pC I BB W
    2 re T T
    T 1 1 B 2 IE IC gm
    I pE I pE 2Lp
    MOSFET Physics:
    I pC 2kT N A
    0
    IE S inv 2 B ln
    e ni
    0 S kT ln N A /ni
    2
    W
    Base _ Transit _ Time : D B wm 2
    2Dp e2 N A
    Diffusion_ length : L p D p p
    2e0 S N A 2 B

    2 Vth VFB 2 B
    Lp Cox
    Diffusion_ life _ time : p
    Dp
    Qox
    VFB ms
    BJT DC Models: Cox
    Transistor OFF
    MOSFET DC models:
    (VBE < 0.7V) and (VBC < 0.4V)
    VGS < Vtn OFF ID=0
    IB = 0 IC = 0 IE = 0
    VGS >= Vtn ON
    Transistor in Active region
    VDS < (VGS Vtn) (Triode)
    (VBE >= 0.7V) and (VBC < 0.4V)
    ID = n Cox (W/L) [(VGS - Vtn) VDS VDS2/2]
    VCE >=0.3V
    VDS << (VGS Vtn) (Linear)
    IC = IS exp (VBE/VT)
    IC = IB = IE ID = n Cox (W/L) [(VGS - Vtn) VDS]
    IE = IC + IB = (+1) IB RON = VDS/ID = 1/[n Cox (W/L) (VGS - Vtn) ]
    = / (1- ) and >> 1 VDS >= (VGS Vtn) (Saturation)
    = / (+1) and <= 1 ID =0.5* n Cox (W/L) (VGS - Vtn)2

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