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    ED Model Exam QN Paper

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    anand_duraiswamy
    The document is a test for an electronics course covering topics like PN junction diodes, transistors, FETs, and other semiconductor devices. It contains 19 questions across two sections testing students' knowledge of concepts like drift/diffusion current, doping, transistor characteristics, MOSFET operation, and devices like SCRs, tunnel diodes, and lasers.

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    ED Model Exam QN Paper

    Uploaded by

    anand_duraiswamy
    64 views2 pages
    The document is a test for an electronics course covering topics like PN junction diodes, transistors, FETs, and other semiconductor devices. It contains 19 questions across two sections testing students' knowledge of concepts like drift/diffusion current, doping, transistor characteristics, MOSFET operation, and devices like SCRs, tunnel diodes, and lasers.

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    ED Model Exam Qn Paper

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    The document is a test for an electronics course covering topics like PN junction diodes, transistors, FETs, and other semiconductor devices. It contains 19 questions across two sections testing students' knowledge of concepts like drift/diffusion current, doping, transistor characteristics, MOSFET operation, and devices like SCRs, tunnel diodes, and lasers.

    Copyright:

    © All Rights Reserved
    Download as DOC, PDF, TXT or read online from Scribd
    Download as doc, pdf, or txt
    64 views2 pages

    ED Model Exam QN Paper

    Uploaded by

    anand_duraiswamy
    The document is a test for an electronics course covering topics like PN junction diodes, transistors, FETs, and other semiconductor devices. It contains 19 questions across two sections testing students' knowledge of concepts like drift/diffusion current, doping, transistor characteristics, MOSFET operation, and devices like SCRs, tunnel diodes, and lasers.

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    © All Rights Reserved
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    of 2

    ROLL NO:

    K.L.N. COLLEGE OF ENGINEERING, POTTAPALAYAM 630 612


    B.E. / B.Tech, /M.E., / MBA/ MCA DEGREE COURSES
    (REGULATION - 2013)
    Centralized Internal Test - IV
    Branch: ECE (A & B) Year / Sem: I /II
    Date / Duration: 28.03.17 / 9.10-10:50 am Max: 50 Marks
    EC6201 / ELECTRONIC DEVICES
    I. Course outcomes, Question Number, Marks

    Cos CO1 CO2 CO3 CO4 CO5


    Q.Nos - - - 1-10,11,12, -
    13(a&b),14(a&b)
    Marks(Max) - - - 80 -
    II. Knowledge skill outcomes

    Remember
    Understand Apply Analysis Evaluate Create
    Level (K1) (K2) (K3) (K4) (K5) (K6)
    Q.Nos 1-10,13b
    11,12,13a,
    14 (a&b)
    Marks(Max) 27 53
    PART-A ( 2 x 10 = 20 Marks)
    ANSWER ALL THE QUESTIONS

    1. Define drift current and diffusion current.


    2. What is meant by doping in a semiconductor ?
    3. The common base dc current gain of a transistor is 0.967.if the emitter current is 10 mA.What is the
    value of a base current.
    4. What is meant by Base width Modulation ?
    5. Compare JFET with MOSFET.
    6. Define Pinchoff voltage
    7. Sketch the energy band diagram of metal semiconductor junction when contact is made.
    8. What is tunneling phenomenon?
    9. What is meant by regenerative action of SCR ?
    10. What is the principle of operation of LCD ?

    PART B (5 x 16=80)

    11. (i) a) Explain and Derive the current equation of PN junction diode.
    b) Explain the switching characteristics of a PN junction diode.

    11 .ii) a) Describe the construction action of PN junction diode under forward and reverse bias
    conditions.
    b) The reverse saturation of a silicon PN junction diode is 10uA.Calculate the diode current for
    forward bias voltage of 0.6V at 25 degree celcius.

    12. a) Explain the input and output characteristics of a NPN transistor CE configuration and draw the
    circuit diagram
    b) Define , and of a transistor. Show how are they related to each other.

    13. a) Draw and derive the expression of Ebers Moll model.


    b) Explain CE transistor hybrid model.
    14. a) Explain the E- MOSFET and D-MOSFET with the help of suitable diagram
    b) What is channel Length Modulation in MOSFET ?

    15. a)Derive an Expression for drain current for FET in Pinch off region with necessary diagram.
    b) Explain the principle behind the laser diode with a neat diagram.

    16. a) Draw the structure of a metal semiconductor junction and explain the energy band diagram
    structure before and after contact
    b) What is meant tunneling? Explain the V-I characterstics of a tunnel diode.

    17. a)Describe briefly about the Varactor diode


    b) Explain the principle behind the laser diode with a neat diagram.

    18. a) Draw the two transistor model of SCR and explain its operation
    b) Draw the basic structure of UJT and Explain V-I characteristics of UJT using Equivalent circuit.

    19. a)Explain the operation of DMOS and VMOS transistor.


    b)Describe the operation LED and CCD and list out its applications.

    ************************** ALL THE BEST *************************

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