FQP12N60C / FQPF12N60C: 600V N-Channel MOSFET

QFET
FQP12N60C / FQPF12N60C
600V N-Channel MOSFET
Features
Description
These N-Channel enhancement mode power field effect

transistors are produced using Fairchilds proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
12A, 600V, RDS(on) = 0.65 @VGS = 10 V

Low gate charge ( typical 48 nC)
Low Crss ( typical 21pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS compliant
G
G DS
TO-220
FQP Series
TO-220F
GD S
FQPF Series
Absolute Maximum Ratings

Symbol
Parameter
FQP12N60C
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25C)

- Continuous (TC = 100C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
EAS
IAR
FQPF12N60C
600
(Note 1)
Unit
V
12
7.4
12*
7.4*
A
A
48
48*
30
Single Pulsed Avalanche Energy
(Note 2)
870
mJ
Avalanche Current
(Note 1)
12
EAR
Repetitive Avalanche Energy
(Note 1)
22.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation
(TC = 25C)
- Derate above 25C
225
1.78
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,

1/8 from Case for 5 Seconds
51
0.41
W
W/C
-55 to +150
300
*Drain current limited by maximum junction temperature
Thermal Characteristics
FQP12N60C
FQPF12N60C
Unit
RJC
Symbol
Thermal Resistance, Junction-to-Case
Parameter
0.56
2.43
C/W
RJS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
C/W
RJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
C/W
2007 Fairchild Semiconductor Corporation
FQP12N60C / FQPF12N60C Rev. B1
www.fairchildsemi.com
FQP12N60C / FQPF12N60C 600V N-Channel MOSFET
September 2007
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQP12N60C
FQP12N60C
TO-220
50
FQPF12N60C
FQPF12N60C
TO-220F
50
Electrical Characteristics
Symbol
TC = 25C unless otherwise noted
Parameter
Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250A, TJ = 25C
600
--
--
BVDSS
/ TJ
Breakdown Voltage Temperature

Coefficient
ID = 250A, Referenced to 25C
--
0.5
--
V/C
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V

VDS = 480V, TC = 125C
---
---
1
10
A
A
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
2.0
--
4.0
--
0.53
0.65
--
13
--
--
1760
2290
pF
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250A
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 6A
gFS
Forward Transconductance
VDS = 40V, ID = 6A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,

f = 1.0MHz
--
182
235
pF
--
21
28
pF
--
30
70
ns
--
85
180
ns
--
140
280
ns
--
90
190
ns
--
48
63
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 300V, ID = 12A

RG = 25
(Note 4, 5)
VDS = 400V, ID = 12A

VGS = 10V
(Note 4, 5)
--
8.5
--
nC
--
21
--
nC
12
Drain-Source Diode Characteristics and Maximum Ratings

IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
48
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 12A
--
--
1.4
trr
Reverse Recovery Time
420
--
ns
Reverse Recovery Charge
VGS = 0V, IS = 12A

dIF/dt =100A/s
--
Qrr
--
4.9
--
(Note 4)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 11mH, IAS = 12A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 12A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Pulse Test: Pulse width 300s, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Package Marking and Ordering Information
Typical Performance Characteristics

Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
10
10
ID, Drain Current [A]
Top :
150 C
o
-55 C
25 C
0
10
Notes :
1. 250s Pulse Test
2. TC = 25
10
Notes :
1. VDS = 40V
2. 250s Pulse Test
-1
10
0
10
10
VDS, Drain-Source Voltage [V]
10
Figure 4. Body Diode Forward Voltage

Variation vs. Source Current
and Temperatue
1.5
IDR, Reverse Drain Current [A]
RDS(ON) [ ],
Drain-Source On-Resistance
Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage
VGS = 10V
1.0
VGS = 20V
0.5
VGS, Gate-Source Voltage [V]
10
10
150
Notes :
1. VGS = 0V
2. 250s Pulse Test
25
Note : TJ = 25
-1
10
15
20
25
30
10
35
0.2
0.4
0.6
Figure 5. Capacitance Characteristics

3500
VGS, Gate-Source Voltage [V]
Capacitance [pF]
Coss
1500
1000
1.4
VDS = 120V
Ciss
2000
1.2
12
10
2500
1.0
Figure 6. Gate Charge Characteristics
Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd
Crss = Cgd
3000
0.8
VSD, Source-Drain voltage [V]
Notes ;
1. VGS = 0 V
2. f = 1 MHz
Crss
500
VDS = 300V
VDS = 480V
2
Note : ID = 12A
0
-1
10
0
0
10
10
10
20
30
40
50
QG, Total Gate Charge [nC]
Figure 7. Breakdown Voltage Variation

vs. Temperature
Figure 8. On-Resistance Variation

vs. Temperature
3.0
1.1
1.0
Notes :
1. VGS = 0 V
2. ID = 250 A
0.9
0.8
-100
-50
50
100
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
150
2.0
1.5
1.0
Notes :
1. VGS = 10 V
2. ID = 6.0 A
0.5
0.0
-100
200
100
10 s
1 ms
10 ms
100 ms
DC
0
10
Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-1
10
200
10 s
100 s
100 s
10
150
Operation in This Area

is Limited by R DS(on)
10
50
Figure 9-2. Maximum Safe Operating Area

for FQPF12N60C
Operation in This Area

is Limited by R DS(on)
Figure 9-1. Maximum Safe Operating Area

for FQP12N60C
10
-50
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
10
1 ms
10 ms
100 ms
DC
10
Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-1
10
-2
10
10
10
-2
10
10
10
10
10
10
10
Figure 10. Maximum Drain Current

vs. Case Temperature
14
12
10
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature []
Typical Performance Characteristics (Continued)
Typical Performance Characteristics (Continued)

Figure 11-1. Transient Thermal Response Curve for FQP12N60C
Z JC(t), Thermal Response
10
D = 0 .5
10
0 .2
-1
N o te s :
1 . Z J C (t) = 0 .5 6 /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z J C (t)
0 .1
0 .0 5
10
10
PDM
0 .0 2
0 .0 1
-2
t1
s in g le p u ls e
-5
10
-4
10
-3
10
-2
10
t2
-1
10
10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Z JC(t), Thermal Response
Figure 11-2. Transient Thermal Response Curve for FQPF12N60C
10
D = 0 .5
0 .2
N o te s :
1 . Z J C (t) = 2 .4 3 /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z J C (t)
0 .1
10
0 .0 5
-1
0 .0 2
PDM
0 .0 1
t1
10
s in g le p u ls e
-2
10
-5
10
-4
10
-3
10
-2
10
-1
t2
10
10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
Peak Diode Recovery dv/dt Test Circuit & Waveforms
TO-220
4.50 0.20
2.80 0.10
(3.00)
+0.10
1.30 0.05
18.95MAX.
(3.70)
3.60 0.10
15.90 0.20
1.30 0.10
(8.70)
(1.46)
9.20 0.20
(1.70)
9.90 0.20
1.52 0.10
10.08 0.30
(1.00)
13.08 0.20
)
(45
1.27 0.10
0.80 0.10
2.54TYP
[2.54 0.20]
+0.10
0.50 0.05
2.40 0.20
2.54TYP
[2.54 0.20]
10.00 0.20
Dimensions in Millimeters
Mechanical Dimensions
(Continued)
3.30 0.10
TO-220F
10.16 0.20
2.54 0.20
3.18 0.10
(7.00)
(1.00x45)
15.87 0.20
15.80 0.20
6.68 0.20
(0.70)
0.80 0.10
)
0
(3
9.75 0.30
MAX1.47
#1
+0.10
0.50 0.05
2.54TYP
[2.54 0.20]
2.76 0.20
2.54TYP
[2.54 0.20]
9.40 0.20
4.70 0.20
0.35 0.10
Dimensions in Millimeters
Mechanical Dimensions
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx
Build it Now
CorePLUS
CROSSVOLT
CTL
Current Transfer Logic
EcoSPARK
Green FPS
Green FPS e-Series
GTO
i-Lo
IntelliMAX
ISOPLANAR
MegaBuck
MICROCOUPLER
MicroFET
MicroPak
MillerDrive
Motion-SPM
OPTOLOGIC
OPTOPLANAR
Fairchild
Fairchild Semiconductor
FACT Quiet Series
FACT
FAST
FastvCore
FPS
FRFET
Global Power ResourceSM
PDP-SPM
Power220
Power247
POWEREDGE
Power-SPM
PowerTrench
Programmable Active Droop
QFET
QS
QT Optoelectronics
Quiet Series
RapidConfigure
SMART START
SPM
STEALTH
SuperFET
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
The Power Franchise
TinyBoost
TinyBuck
TinyLogic
TINYOPTO
TinyPower
TinyPWM
TinyWire
SerDes
UHC
UniFET
VCX
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1.
2.
Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
significant injury to the user.
A critical component in any component of a life support,

device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product

development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves

the right to make changes at any time without notice to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I31
10
TRADEMARKS

FQP12N60C / FQPF12N60C: 600V N-Channel MOSFET

Uploaded by

Copyright:

Available Formats

FQP12N60C / FQPF12N60C: 600V N-Channel MOSFET

Uploaded by

Document Information

Original Description:

Original Title

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

FQP12N60C / FQPF12N60C: 600V N-Channel MOSFET

Uploaded by

Copyright:

Available Formats

QFET

These N-Channel enhancement mode power field effect

12A, 600V, RDS(on) = 0.65 @VGS = 10 V

Absolute Maximum Ratings

- Continuous (TC = 25C)

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

*Drain current limited by maximum junction temperature

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

2007 Fairchild Semiconductor Corporation

FQP12N60C / FQPF12N60C Rev. B1

FQP12N60C / FQPF12N60C 600V N-Channel MOSFET

TC = 25C unless otherwise noted

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250A, TJ = 25C

Breakdown Voltage Temperature

ID = 250A, Referenced to 25C

Zero Gate Voltage Drain Current

VDS = 600V, VGS = 0V

Gate-Body Leakage Current, Forward

VGS = 30V, VDS = 0V

Gate-Body Leakage Current, Reverse

VGS = -30V, VDS = 0V

Gate Threshold Voltage

VDS = VGS, ID = 250A

Reverse Transfer Capacitance

VDS = 25V, VGS = 0V,

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

VDD = 300V, ID = 12A

VDS = 400V, ID = 12A

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

VGS = 0V, IS = 12A

Reverse Recovery Time

Reverse Recovery Charge

VGS = 0V, IS = 12A

FQP12N60C / FQPF12N60C Rev. B1

FQP12N60C / FQPF12N60C 600V N-Channel MOSFET

Package Marking and Ordering Information

FQP12N60C / FQPF12N60C 600V N-Channel MOSFET

Typical Performance Characteristics

Figure 2. Transfer Characteristics

ID, Drain Current [A]

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

Figure 4. Body Diode Forward Voltage

IDR, Reverse Drain Current [A]