Semiconductor KF5N50P/F/PZ/FZ: Technical Data
Semiconductor KF5N50P/F/PZ/FZ: Technical Data
Semiconductor KF5N50P/F/PZ/FZ: Technical Data
KF5N50P/F/PZ/FZ
TECHNICAL DATA
General Description
KF5N50P, KF5N50PZ
A
O
C
F
G
B
Q
FEATURES
Qg(typ) = 12nC
J
D
N
KF5N50F
KF5N50FZ
UNIT
Drain-Source Voltage
VDSS
500
Gate-Source Voltage
VGSS
30
Tc=25
Drain Power
Dissipation
13*
KF5N50F, KF5N50FZ
A
mJ
EAR
8.6
mJ
dv/dt
4.5
270
Derate above 25
13
EAS
PD
2.9*
TO-220AB
E
B
IDP
2.9
1. GATE
2. DRAIN
3. SOURCE
Pulsed (Note1)
ID
5.0*
83
V/ns
41.5
0.66
0.33
W
W/
Tj
150
Tstg
-55150
M
D
Thermal Characteristics
RthJC
1.5
3.0
/W
RthJA
62.5
62.5
/W
@TC=100
Drain Current
5.0
@TC=25
SYMBOL
CHARACTERISTIC
DIM MILLIMETERS
_ 0.2
9.9 +
A
15.95 MAX
B
1.3+0.1/-0.05
C
_ 0.1
D
0.8 +
_ 0.2
E
3.6 +
_ 0.1
F
2.8 +
3.7
G
H
0.5+0.1/-0.05
1.5
I
_ 0.3
13.08 +
J
K
1.46
_ 0.1
1.4 +
L
_ 0.1
1.27+
M
_ 0.2
2.54 +
N
_ 0.2
4.5 +
O
_ 0.2
2.4 +
P
_ 0.2
9.2 +
Q
DIM
MILLIMETERS
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
_ 0.3
10.0 +
_ 0.3
15.0 +
_ 0.3
2.70 +
0.76+0.09/-0.05
_ 0.2
3.2 +
_ 0.3
3.0 +
_ 0.3
12.0 +
0.5+0.1/-0.05
_ 0.5
13.6 +
_ 0.2
3.7 +
1.2+0.25/-0.1
1.5+0.25/-0.1
_ 0.1
2.54 +
_ 0.1
6.8 +
_ 0.2
4.5 +
_ 0.2
2.6 +
0.5 Typ
1. GATE
2. DRAIN
3. SOURCE
PIN CONNECTION
TO-220IS
(KF5N50P, KF5N50F)
(KF5N50PZ, KF5N50FZ)
D
G
G
S
2008. 11. 19
Revision No : 0
1/7
KF5N50P/F/PZ/FZ
ELECTRICAL CHARACTERISTICS (Tc=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
500
ID=250, Referenced to 25
0.55
V/
Static
BVDSS
ID=250 , VGS=0V
IDSS
VDS=500V, VGS=0V,
10
Vth
VDS=VGS, ID=250
2.0
4.0
IGSS
RDS(ON)
Drain-Source ON Resistance
KF5N50P/F
VGS=30V, VDS=0V
100
nA
KF5N50PZ/FZ
VGS=25V, VDS=0V
10
1.15
1.4
12
2.4
5.4
22.5
29
58
VGS=10V, ID=2.5A
Dynamic
Qg
Qgs
Gate-Drain Charge
Qgd
td(on)
td(off)
VGS=10V
(Note4,5)
VDD=250V
tr
VDS=400V, ID=5A
RL=50
nC
ns
RG=25
(Note4,5)
tf
18
Input Capacitance
Ciss
430
Output Capacitance
Coss
71
Crss
7.5
20
pF
IS
ISP
VSD
IS=5A, VGS=0V
1.4
trr
IS=5A, VGS=0V,
150
ns
Qrr
dIs/dt=100A/
0.42
VGS<Vth
Marking
1
1
KF5N50
801
P
KF5N50
813
F
1
2
KF5N50
801
PZ
KF5N50
813
FZ
1 PRODUCT NAME
2 LOT NO
2008. 11. 19
Revision No : 0
2/7
KF5N50P/F/PZ/FZ
Fig1. ID - VDS
Fig2. ID - VGS
VDS=30V
100
VGS=10V
10
VGS=7V
VGS=5V
10
TC=100 C
10
25 C
-1
0.1
10
0.1
10
100
On - Resistance RDS(ON) ()
3.0
1.1
1.0
0.9
-50
50
100
2.5
VGS=6V
2.0
1.5
VGS=10V
1.0
0.5
0
0
150
Junction Temperature Tj ( C )
3.0
Normalized On Resistance
10
TC=100 C
25 C
0
10
-1
0.4
0.6
0.8
1.0
1.2
1.4
2008. 11. 19
Revision No : 0
10
12
Fig6. RDS(ON) - Tj
10
0.2
Fig5. IS - VSD
10
10
Fig4. RDS(ON) - ID
VGS = 0V
IDS = 250
0.8
-100
Fig3. BVDSS - Tj
1.2
1.6
1.8
2.5
VGS =10V
IDS = 2.5A
2.0
1.5
1.0
0.5
0.0
-100
-50
50
100
150
Junction Temperature Tj ( C)
3/7
KF5N50P/F/PZ/FZ
Fig 7. C - VDS
Capacitance (pF)
Ciss
100
Coss
10
Crss
1
0
10
15
20
25
30
35
1000
ID=5A
10
8
VDS = 400V
VDS = 250V
VDS = 100V
4
2
0
2
40
(KF5N50P, KF5N50PZ)
12
14
16
(KF5N50F, KF5N50FZ)
101
100s
1ms
100
10ms
100ms
DC
10-1
Tc= 25 C
Tj = 150 C
2 Single pulse
10
10
100
101
100s
100
1ms
10ms
100ms
10-1
DC
Tc= 25 C
Tj = 150 C
2 Single pulse
102
101
103
10
100
101
102
103
Fig11. ID - Tj
6
5
4
3
2
1
0
0
25
50
75
100
125
150
Junction Temperature Tj ( C)
2008. 11. 19
Revision No : 0
4/7
KF5N50P/F/PZ/FZ
Duty=0.5
0.2
10-1
PDM
0.1
t1
0.05
t2
0.02
gle
e
uls
Sin
0.0
- RthJC =
10-2
10-5
10-4
10-3
10-2
10-1
Tj(max) - Tc
PD
100
101
TIME (sec)
Duty=0.5
100
0.2
0.1
0.05
10-1
PDM
0.02
t1
0.01
P
gle
t2
uls
Sin
10-2
10-5
10-4
10-3
10-2
10-1
100
101
TIME (sec)
2008. 11. 19
Revision No : 0
5/7
KF5N50P/F/PZ/FZ
Fast
Recovery
Diode
ID
0.8 VDSS
ID
1.0 mA
Q
VDS
Qgd
Qgs
Qg
VGS
BVDSS
BVDSS - VDD
BVDSS
L
IAS
50V
25
ID(t)
VDS
VGS
10 V
VDD
VDS(t)
Time
tp
0.5 VDSS
VGS 10%
25
VDS
10V
2008. 11. 19
VGS
Revision No : 0
td(on)
ton
tr
td(off)
tf
toff
6/7
KF5N50P/F/PZ/FZ
DUT
VDS
IF
ISD
(DUT)
di/dt
IRM
IS
0.5
VDSS
VDS
(DUT)
driver
10V
2008. 11. 19
VGS
Revision No : 0
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