Pbyr2545ct CTB Cte-05
Pbyr2545ct CTB Cte-05
Pbyr2545ct CTB Cte-05
Product data
1. Product profile
1.1 Description
Dual, common cathode schottky rectifier diodes in two conventional leaded plastic
packages and one surface mount plastic package.
Product availability:
PBYR2545CT in SOT78 (TO-220AB)
PBYR2545CTB in SOT404 (D2-PAK)
PBYR2545CTE in SOT226 (I2-PAK).
1.2 Features
Low forward volt drop
Reverse surge capability
Fast switching
High thermal cycling performance
1.3 Applications
Switched mode power supplies
VF 0.62 V
Tj(max) 150 C
2. Pinning information
Table 1:
Pin
Description
anode 1
cathode
anode 2
mb
cathode
Simplified outline
[1]
Symbol
mb
mb
mb
2
MBK106
MBK116
1 2 3
SOT78 (TO-220AB)
[1]
SOT404 (D2-PAK)
1 2 3
MBK112
SOT226 (I2-PAK)
MBL871
PBYR2545CT/CTB/CTE
Philips Semiconductors
3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VRRM
45
VRWM
45
45
30
VR
Tmb 113 C
IF(AV)
Tstg
storage temperature
65
+175
Tj
junction temperature
150
[1]
Per diode
IFRM
30
IFSM
tp = 10 ms
tp = 8.3 ms;
sinusoidal; Tj = 125 C prior to surge;
with reapplied VRRM(max)
180
200
IRRM
[1]
For output currents greater than 20A, the cathode connection should be made to the metal mounting tab.
Product data
2 of 13
PBYR2545CT/CTB/CTE
Philips Semiconductors
003aaa210
15
PF
(W)
127.5
=1
Vo = 0.34 V
Rs = 0.014
Tmb (C)
(max)
0.5
PF
(W)
135
142.5
150
132
a = 1.57
Vo = 0.34 V
Rs = 0.014
1.9
Tmb (C)
2.2
(max)
2.8
0.2
10
003aaa211
12
4
138
0.1
P
5
tp
T
tp
144
t
T
0
0
10
20
IF(AV) (A)
30
150
0
IF(AV) (A)
15
I F ( RMS )
a = -----------------I F ( AV )
I F ( AV ) = I F ( RMS )
Fig 1. Maximum forward power dissipation (square
current waveform) as a function of average
forward current (per diode).
Product data
10
3 of 13
PBYR2545CT/CTB/CTE
Philips Semiconductors
4. Thermal characteristics
Table 3:
Thermal characteristics
Symbol Parameter
Rth(j-mb)
Rth(j-a)
Conditions
1.5
K/W
both diodes
K/W
60
K/W
SOT404
50
K/W
10
Zth(j-mb)
(K/W)
10-1
10-2
10-6
10-5
10-4
10-3
10-2
10-1
10
tp (s)
Fig 3. Transient thermal impedance from junction to mounting base per diode as a function of pulse duration.
Product data
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PBYR2545CT/CTB/CTE
Philips Semiconductors
5. Characteristics
Table 4: Characteristics
Tj = 25 C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF = 30 A; Tj = 125 C; Figure 4
0.72
0.76
IR
Cd
forward voltage
reverse current
diode capacitance
IF = 20 A; Tj = 125 C
0.58
0.62
IF = 30 A
0.72
0.82
VR = VRRM; Figure 5
0.3
mA
VR = VRRM; Tj = 100 C
30
40
mA
f = 1 MHz; VR = 5 V; Figure 6
Tj = 25 C to 125 C
530
pF
Product data
5 of 13
PBYR2545CT/CTB/CTE
Philips Semiconductors
003aaa212
50
Tj = 25 C
Tj = 125 C
IF
(A)
003aaa213
102
Tj =
IR
(mA)
40
125 C
10
100 C
30
75 C
1
typ
20
50 C
10-1
max
10
25 C
10-2
0
0.4
0.8
1.2
10
20
VF (V)
30
40
50
VR (V)
003aaa214
104
Cd
(pF)
103
102
10
VR (V)
102
f = 1MHz
Fig 6. Diode capacitance as a function of reverse voltage per diode; typical values.
Product data
6 of 13
PBYR2545CT/CTB/CTE
Philips Semiconductors
6. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
A
A1
mounting
base
D1
L2
L1(1)
Q
b1
3
b
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A1
b1
D1
L1(1)
L2
max.
mm
4.5
4.1
1.39
1.27
0.9
0.7
1.3
1.0
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
2.54
15.0
13.5
3.30
2.79
3.0
3.8
3.6
3.0
2.7
2.6
2.2
Note
1. Terminals in this zone are not tinned.
OUTLINE
VERSION
REFERENCES
IEC
SOT78
JEDEC
EIAJ
3-lead TO-220AB
SC-46
EUROPEAN
PROJECTION
ISSUE DATE
00-09-07
01-02-16
Product data
7 of 13
PBYR2545CT/CTB/CTE
Philips Semiconductors
SOT404
A
A1
mounting
base
D1
HD
2
Lp
3
c
b
e
2.5
5 mm
scale
A1
D
max.
D1
Lp
HD
mm
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
11
1.60
1.20
10.30
9.70
2.54
2.90
2.10
15.80
14.80
2.60
2.20
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
99-06-25
01-02-12
SOT404
Product data
8 of 13
PBYR2545CT/CTB/CTE
Philips Semiconductors
SOT226
A
A1
D1
mounting
base
D
L1
L2
Q
b1
3
b
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
UNIT
A1
b1
D1
L1
L2
max
mm
4.5
4.1
1.40
1.27
0.9
0.7
1.3
1.0
0.7
0.4
9.65
8.65
1.5
1.1
10.3
9.7
2.54
15.0
13.5
3.30
2.79
3.0
2.6
2.2
Note
1. Terminals in this zone are not tinned.
OUTLINE
VERSION
SOT226
REFERENCES
IEC
JEDEC
EIAJ
low-profile
3-lead TO-220AB
EUROPEAN
PROJECTION
ISSUE DATE
99-05-27
99-09-13
Product data
9 of 13
PBYR2545CT/CTB/CTE
Philips Semiconductors
7. Soldering
10.85
10.60
10.50
1.50
7.50
7.40
1.70
2.25 2.15
8.15
8.275
8.35
1.50
4.60
0.30
4.85
5.40
7.95
8.075
3.00
0.20
1.20
1.30
1.55
solder lands
solder resist
5.08
MSD057
occupied area
solder paste
Dimensions in mm.
Product data
10 of 13
Philips Semiconductors
PBYR2545CT/CTB/CTE
Schottky barrier rectifier diodes
8. Revision history
Table 5:
Revision history
Rev Date
05
20030120
CPCN
Description
Product data
11 of 13
PBYR2545CT/CTB/CTE
Philips Semiconductors
Product status[2][3]
Definition
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
10. Definitions
11. Disclaimers
Life support These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: [email protected].
Product data
12 of 13
Philips Semiconductors
PBYR2545CT/CTB/CTE
Schottky barrier rectifier diodes
Contents
1
1.1
1.2
1.3
1.4
2
3
4
4.1
5
6
7
8
9
10
11
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12