Datasheet Bu2508df

Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508DF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA

SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP. 4.5 1.6 0.4 MAX. 1500 700 8 15 45 1.0 2.0 0.6 UNIT V V A A W V A V s
Ths 25 C IC = 4.5 A; IB = 1.12 A IF = 4.5 A ICsat = 4.5 A; IB(end) = 1.1 A
PINNING - SOT199
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c b
Rbe
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 700 8 15 4 6 100 5 45 150 150 UNIT V V A A A A mA A W C C
average over any 20 ms period Ths 25 C
1 Turn-off current.
July 1998
Rev 1.600
BU2508DF
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to heatsink Junction to ambient CONDITIONS without heatsink compound with heatsink compound in free air TYP. 35 MAX. 3.7 2.8 UNIT K/W K/W K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. 65 % ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V
Cisol
Capacitance from T2 to external f = 1 MHz heatsink
22
pF
STATIC CHARACTERISTICS
Ths = 25 C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO Rbe VCEOsust VCEsat VBEsat hFE hFE VF PARAMETER Collector cut-off current
2
CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VEB = 7.5 V; IC = 0 A IB = 600 mA VEB = 7.5 V IB = 0 A; IC = 100 mA; L = 25 mH IC = 4.5 A; IB = 1.12 A IC = 4.5 A; IB = 1.7 A IC = 1 A; VCE = 5 V IC = 4.5 A; VCE = 1 V IF = 4.5 A
MIN. 7.5 700 4 -
TYP. 227 13.5 33 13 5.5 1.6
MAX. 1.0 2.0 1.0 1.1 7.0 2.0
UNIT mA mA mA V V V V V
Emitter cut-off current Emitter-base breakdown voltage Base-emitter resistance Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Diode forward voltage
DYNAMIC CHARACTERISTICS
Ths = 25 C unless otherwise specified SYMBOL Cc PARAMETER Collector capacitance Switching times (16 kHz line deflection circuit) Turn-off storage time Turn-off fall time Switching times (38 kHz line deflectioin circuit) Turn-off storage time Turn-off fall time CONDITIONS IE = 0 A; VCB = 10 V; f = 1 MHz ICsat = 4.5 A; IB(end) = 1.1 A; LB = 6 H; -VBB = 4 V; (-dIB/dt = 0.6 A/s) ICsat = 4.0 A; IB(end) = 0.9 A; LB = 6 H; -VBB = 4 V; (-dIB/dt = 0.6 A/s) TYP. 80 MAX. UNIT pF s s s s
ts tf
5.0 0.4
6.0 0.6
ts tf
4.7 0.25
5.7 0.35
2 Measured with half sine-wave voltage (curve tracer).
July 1998
Rev 1.600
BU2508DF
TRANSISTOR IC DIODE
ICsat
100
h FE
BU2508DF
Tj = 25 C Tj = 125 C
5V
IB
IBend
10
t 20us 26us 64us VCE
1V
1 0.01
t
0.1 IC / A
10
Fig.1. 16kHz Switching times waveforms.
Fig.4. Typical DC current gain. hFE = f (IC) parameter VCE
ICsat 90 % IC
VBESAT / V 1.2 1.1 1 0.9

Tj = 25 C Tj = 125 C
BU2508DF
10 % tf ts IB IBend
0.8
t
0.7 0.6
IC/IB= 3 4 5
0.5 0.4 0.1 1 IC / A 10
- IBM
Fig.2. Switching times definitions.
Fig.5. Typical base-emitter saturation voltage. VBEsat = f (IC); parameter IC/IB
+ 150 v nominal adjust for ICsat
VCESAT / V 1 0.9 0.8 0.7 0.6 0.5

Tj = 25 C Tj = 125 C
BU2508DF IC/IB= 5 4 3
1mH
D.U.T. IBend LB 12nF

Rbe
0.4 0.3 0.2 0.1 0 0.1
-VBB
1 IC / A
10
Fig.3. 16kHz Switching times test circuit.
Fig.6. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB
July 1998
Rev 1.600
BU2508DF
1.2 1.1 1 0.9 0.8 0.7 0.6
VBESAT / V
Tj = 25 C Tj = 125 C
BU2508DF
Zth K/W 10
BU2508AX
0.5 1 0.2 0.1 0.05
IC= 6A 4.5A 3A 2A 0 1 2 IB / A 3 4
0.1 0.02
0.01
P D
tp
t D= p T
0 0.001 1.0E-06 1E-04 tp / sec 1E-02
t
1E+00
Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC
Fig.10. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T
10
VCESAT / V
BU2508DF
Tj = 25 C Tj = 125 C
6A 4.5A 1 3A IC=2A 0.1
12 11 10 9 8 7 6 5 4 3 2 1 0
ts, tf / us
BU2508DF ts
IC = 3.5A 4.5A tf 0.1 1 IB / A 10
0.1
1 IB / A
10
Fig.8. Typical collector-emitter saturation voltage. VCEsat = f (IB); parameter IC
Fig.11. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85C; f = 16 kHz
Normalised Power Derating
with heatsink compound
1000
Eoff / uJ
BU2508DF
120 110 100 90 80 70 60 50 40 30 20 10
PD%
IC = 4.5A 3.5A 100
10
0.1
1 IB / A
10
20
40
60
80 Ths / C
100
120
140
Fig.9. Typical turn-off losses. Tj = 85C Eoff = f (IB); parameter IC; f = 16 kHz
Fig.12. Normalised power dissipation. PD% = 100PD/PD 25C = f (Ths)
July 1998
Rev 1.600
BU2508DF
100
IC / A
100
IC / A
= 0.01
= 0.01
tp =
ICM max 10 IC max

II
ICM max 10 IC max

II
tp =
10 us
10 us
Ptot max
Ptot max
100 us
100 us
1 ms
1 ms
0.1
10 ms DC
0.1
10 ms DC
0.01 1 10 100 VCE / V 1000
0.01 1 10 100 VCE / V 1000
Fig.13. Forward bias safe operating area. Ths = 25C I Region of permissible DC operation. II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and 30 5 newton force on the centre of the envelope.
Fig.14. Forward bias safe operating area. Ths = 25C I Region of permissible DC operation. II Extension for repetitive pulse operation.
NB: Mounted without heatsink compound and 30 5 newton force on the centre of the envelope.
July 1998
Rev 1.600
BU2508DF
MECHANICAL DATA
Dimensions in mm Net Mass: 5.5 g
15.3 max 0.7 7.3 3.1 3.3 6.2 5.8 21.5 max 3.2
5.2 max
o 45
seating plane
3.5
3.5 max not tinned
15.7 min 1 2.1 max 2 3 1.2 1.0

5.45
0.7 max 0.4 M 2.0
5.45
Fig.15. SOT199; The seating plane is electrically isolated from all terminals.
Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".
July 1998
Rev 1.600
BU2508DF
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
July 1998
Rev 1.600

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Philips Semiconductors

Silicon Diffused Power Transistor

QUICK REFERENCE DATA

Ths 25 C IC = 4.5 A; IB = 1.12 A IF = 4.5 A ICsat = 4.5 A; IB(end) = 1.1 A

average over any 20 ms period Ths 25 C

Silicon Diffused Power Transistor

ISOLATION LIMITING VALUE & CHARACTERISTIC

Capacitance from T2 to external f = 1 MHz heatsink

MIN. 7.5 700 4 -

TYP. 227 13.5 33 13 5.5 1.6

MAX. 1.0 2.0 1.0 1.1 7.0 2.0

2 Measured with half sine-wave voltage (curve tracer).

Silicon Diffused Power Transistor

Fig.1. 16kHz Switching times waveforms.

Fig.4. Typical DC current gain. hFE = f (IC) parameter VCE

VBESAT / V 1.2 1.1 1 0.9

0.5 0.4 0.1 1 IC / A 10

Fig.2. Switching times definitions.

Fig.5. Typical base-emitter saturation voltage. VBEsat = f (IC); parameter IC/IB

+ 150 v nominal adjust for ICsat

VCESAT / V 1 0.9 0.8 0.7 0.6 0.5

D.U.T. IBend LB 12nF

0.4 0.3 0.2 0.1 0 0.1

Fig.3. 16kHz Switching times test circuit.

Fig.6. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB

Silicon Diffused Power Transistor

1.2 1.1 1 0.9 0.8 0.7 0.6

0.5 1 0.2 0.1 0.05

0 0.001 1.0E-06 1E-04 tp / sec 1E-02

Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC

Fig.10. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T

6A 4.5A 1 3A IC=2A 0.1

IC = 3.5A 4.5A tf 0.1 1 IB / A 10

Fig.8. Typical collector-emitter saturation voltage. VCEsat = f (IB); parameter IC

120 110 100 90 80 70 60 50 40 30 20 10

IC = 4.5A 3.5A 100

Fig.12. Normalised power dissipation. PD% = 100PD/PD 25C = f (Ths)

Silicon Diffused Power Transistor

ICM max 10 IC max

ICM max 10 IC max

0.01 1 10 100 VCE / V 1000

0.01 1 10 100 VCE / V 1000

Silicon Diffused Power Transistor

3.5 max not tinned

15.7 min 1 2.1 max 2 3 1.2 1.0

0.7 max 0.4 M 2.0

Silicon Diffused Power Transistor

LIFE SUPPORT APPLICATIONS

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