W 13 NK 60 Z

STP13NK60Z/FP, STB13NK60Z
STB13NK60Z-1, STW13NK60Z
N-CHANNEL 600V-0.48-13A TO-220/FP/D2PAK/I2PAK/TO-247
Zener-Protected SuperMESHPower MOSFET

TYPE
STP13NK60Z
STP13NK60ZFP
STB13NK60Z
STB13NK60Z-1
STW13NK60Z
VDSS
RDS(on)
600
600
600
600
600
< 0.55
< 0.55
< 0.55
< 0.55
< 0.55
V
V
V
V
V
ID
13
13
13
13
13
A
A
A
A
A
Pw
150 W
35 W
150 W
150 W
150 W
TYPICAL RDS(on) = 0.48

EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH series is obtained through an
extreme optimization of STs well established stripbased PowerMESH layout. In addition to pushing
on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the
most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products.
3
1
TO-220
TO-220FP
3
2
1
TO-247
3
12
3
1
D2PAK
I2PAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
LIGHTING
ORDERING INFORMATION
SALES TYPE
MARKING
PACKAGE
PACKAGING
STP13NK60Z
P13NK60Z
TO-220
TUBE
STP13NK60ZFP
P13NK60ZFP
TO-220FP
TUBE
STB13NK60ZT4
B13NK60Z
D2PAK
TAPE & REEL
STB13NK60Z
B13NK60Z
D2PAK
TUBE
(ONLY UNDER REQUEST)
STB13NK60Z-1
B13NK60Z
I2PAK
TUBE
STW13NK60Z
W13NK60Z
TO-247
TUBE
February 2003
1/14
STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z

ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STP13NK60Z
STB13NK60Z/-1
STW13NK60Z
VDS
VDGR
VGS
Unit
STP13NK60ZFP
Drain-source Voltage (VGS = 0)
600
Drain-gate Voltage (RGS = 20 k)
600
Gate- source Voltage
30
ID
Drain Current (continuous) at TC = 25C
13
13 (*)
ID
Drain Current (continuous) at TC = 100C
8.2
8.2 (*)
IDM ()
PTOT
VESD(G-S)
dv/dt (1)
Drain Current (pulsed)
52
52 (*)
Total Dissipation at TC = 25C
150
35
Derating Factor
1.20
0.27
W/C
Gate source ESD(HBM-C=100pF, R=1.5K)

Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tj
Tstg
Operating Junction Temperature

Storage Temperature
4000
4.5
V/ns
2500
-55 to 150
V
C
( ) Pulse width limited by safe operating area

(1) ISD 13 A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
TO-220
I2PAK
TO-247
D2PAK
TO-220FP
Rthj-case
Thermal Resistance Junction-case Max
Rthj-pcb
Thermal Resistance Junction-pcb Max (#)
60
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
Maximum Lead Temperature For Soldering Purpose
300
Tl
0.83
3.6
C/W
AVALANCHE CHARACTERISTICS
Symbol
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)
Parameter
10
EAS
Single Pulse Avalanche Energy

(starting Tj = 25 C, ID = IAR, VDD = 50 V)
400
mJ
GATE-SOURCE ZENER DIODE

Symbol
BVGSO
Parameter
Gate-Source Breakdown
Voltage
Test Conditions
Igs= 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
(#) When mounted on minimum Footprint
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the devices
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the devices integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/14

ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Drain-source
Breakdown Voltage
ID = 1 mA, VGS = 0
IDSS
Zero Gate Voltage

Drain Current (VGS = 0)
VDS = Max Rating

VDS = Max Rating, TC = 125 C
1
50
A
A
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = 20 V
10
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 100 A
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V, ID = 5 A
V(BR)DSS
600
Unit
3.75
4.5
0.48
0.55
Typ.
Max.
Unit
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Coss eq. (3)
Parameter
Test Conditions
Forward Transconductance
VDS = 8 V, ID = 5 A
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Min.
11
VDS = 25 V, f = 1 MHz, VGS = 0
2030
210
48
pF
pF
pF
VGS = 0V, VDS = 0V to 480 V
125
pF
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time

Rise Time
VDD = 300 V, ID = 5 A
RG = 4.7 VGS = 10 V
(Resistive Load see, Figure 3)
22
14
ns
ns
Qg
Qgs
Qgd
Total Gate Charge

Gate-Source Charge
Gate-Drain Charge
VDD = 480 V, ID = 10 A,
VGS = 10 V
66
11
33
92
nC
nC
nC
Typ.
Max.
Unit
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
td(off)
tf
Turn-off Delay Time

Fall Time
VDD = 300 V, ID = 5 A
RG = 4.7 VGS = 10 V
(Resistive Load see, Figure 3)
61
12
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time

Fall Time
Cross-over Time
VDD = 480V, ID = 10 A,
RG = 4.7, VGS = 10V
(Inductive Load see, Figure 5)
10
9
20
ns
ns
ns
SOURCE DRAIN DIODE

Symbol
Parameter
Test Conditions
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1)
Forward On Voltage
ISD = 10 A, VGS = 0
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current
ISD = 10 A, di/dt = 100 A/s

VDD = 35 V, Tj = 150C
(see test circuit, Figure 5)
trr
Qrr
IRRM
Min.
Typ.
570
4.5
16
Max.
Unit
10
40
A
A
1.6
V
ns
C
A
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
3/14

Safe Operating Area For TO-220/D2PAK/I2PAK
Thermal Impedance For TO-220/D2PAK/I2PAK
Safe Operating Area For TO-220FP
Thermal Impedance For TO-220FP
Safe Operating Area For TO-247
Thermal Impedance For TO-247
4/14

Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
5/14

Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized BVDSS vs Temperature
Maximum Avalanche Energy vs Temperature
6/14

Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For

Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times
7/14
TO-220 MECHANICAL DATA

mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.40
4.60
0.173
0.181
1.23
1.32
0.048
0.051
2.40
2.72
0.094
D1
0.107
1.27
0.050
0.49
0.70
0.019
0.027
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
L4
H2
G1
F1
L2
F2
Dia.
L5
L9
L7
L6
8/14
L4
P011C
TO-220FP MECHANICAL DATA

mm.
DIM.
MIN.
4.4
inch
TYP
MAX.
MIN.
TYP.
MAX.
4.6
0.173
0.181
2.5
2.7
0.098
0.106
2.5
2.75
0.098
0.108
0.45
0.7
0.017
0.027
0.75
0.030
0.039
F1
1.15
1.5
0.045
0.067
F2
1.15
1.5
0.045
0.067
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
10
10.4
0.393
0.409
L2
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
L7
9.3
0.354
0.366
3.2
0.118
0.126
L3
L3
L6
F2
G1
F1
L7
L2
L5
1 2 3
L4
9/14
D2PAK MECHANICAL DATA

mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
8.95
9.35
0.352
0.368
D1
E
0.315
10
E1
10.4
0.393
8.5
0.334
4.88
5.28
0.192
0.208
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
2.4
3.2
0.094
0.126
0.015
V2
0.4
10/14
TO-262 (I2PAK) MECHANICAL DATA

mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
8.95
9.35
0.352
0.368
2.4
2.7
0.094
0.106
10
10.4
0.393
0.409
13.1
13.6
0.515
0.531
L1
3.48
3.78
0.137
0.149
L2
1.27
1.4
0.050
0.055
B2
C2
A1
L1
L2
L
P011P5/E
11/14
TO-247 MECHANICAL DATA
DIM.
mm.
MIN.
inch
MAX.
MIN.
TYP.
MAX.
0.19
0.20
4.85
5.15
2.20
2.60
0.08
0.10
0.40
0.80
0.015
0.03
1.40
0.04
0.05
F1
0.11
F2
0.07
F3
2.40
0.07
0.09
F4
3.40
0.11
0.13
10.90
0.43
15.45
15.75
0.60
0.62
19.85
20.15
0.78
0.79
L1
3.70
4.30
0.14
L2
L3
18.50
14.20
0.17
0.72
14.80
0.56
0.58
L4
34.60
1.36
L5
5.50
0.21
0.07
0.11
V2
60
60
Dia
12/14
TYP
3.55
3.65
0.14
0.143
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix T4)*

REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
DIM.
mm
MIN.
inch
MAX.
MIN.
1.5
12.8
20.2
24.4
100
MAX.
12.992
0.059
13.2
0.504 0.520
0795
26.4
0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
MAX.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
1.65
1.85
0.065 0.073
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
50
1.574
0.25
0.35 0.0098 0.0137
23.7
24.3
* on sales type
MIN.
330
TAPE MECHANICAL DATA
inch
MAX.
0.933 0.956
13/14
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2003 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
14/14
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STP13NK60Z/FP, STB13NK60Z

Zener-Protected SuperMESHPower MOSFET

TYPICAL RDS(on) = 0.48

INTERNAL SCHEMATIC DIAGRAM

TAPE & REEL

STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z

Drain-source Voltage (VGS = 0)

Drain-gate Voltage (RGS = 20 k)

Gate- source Voltage

Drain Current (continuous) at TC = 25C

Drain Current (continuous) at TC = 100C

Drain Current (pulsed)

Total Dissipation at TC = 25C

Gate source ESD(HBM-C=100pF, R=1.5K)

Insulation Withstand Voltage (DC)

Operating Junction Temperature

( ) Pulse width limited by safe operating area

Thermal Resistance Junction-case Max

Thermal Resistance Junction-pcb Max (#)

Thermal Resistance Junction-ambient Max

Maximum Lead Temperature For Soldering Purpose

Avalanche Current, Repetitive or Not-Repetitive

Single Pulse Avalanche Energy

GATE-SOURCE ZENER DIODE

(#) When mounted on minimum Footprint

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z

Zero Gate Voltage

VDS = Max Rating

Gate Threshold Voltage

VDS = VGS, ID = 100 A

VDS = 25 V, f = 1 MHz, VGS = 0

VGS = 0V, VDS = 0V to 480 V

Turn-on Delay Time

Total Gate Charge

Turn-off Delay Time

Off-voltage Rise Time

SOURCE DRAIN DIODE

Reverse Recovery Time

ISD = 10 A, di/dt = 100 A/s

Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.

STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z

Thermal Impedance For TO-220/D2PAK/I2PAK

Safe Operating Area For TO-220FP

Thermal Impedance For TO-220FP

Safe Operating Area For TO-247

Thermal Impedance For TO-247

STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z

Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage

STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z

Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics

Normalized BVDSS vs Temperature

Maximum Avalanche Energy vs Temperature

STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z

Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuit For