4Gb DDR3L 2133 PDF

4Gb: x4, x8, x16 DDR3L SDRAM
Description
DDR3L SDRAM
MT41K1G4 128 Meg x 4 x 8 banks
MT41K512M8 64 Meg x 8 x 8 banks
MT41K256M16 32 Meg x 16 x 8 banks
Description
DDR3L SDRAM (1.35V) is a low-voltage version of the

DDR3 (1.5V) SDRAM. Refer to the DDR3 (1.5V)
SDRAM data sheet specifications when running in
1.5V compatibility mode.
Self refresh temperature (SRT)

Automatic self refresh (ASR)
Write leveling
Multipurpose register
Output driver calibration
Options
Features
Marking
Configuration
1 Gig x 4
512 Meg x 8
256 Meg x 16
FBGA package (Pb-free) x4, x8
78-ball (9mm x 10.5mm) Rev. E
78-ball (7.5mm x 10.6mm) Rev. N
FBGA package (Pb-free) x16
96-ball (9mm x 14mm) Rev. E
96-ball (7.5mm x 13.5mm) Rev. N
Timing cycle time
938ps @ CL = 14 (DDR3-2133)
1.07ns @ CL = 13 (DDR3-1866)
1.25ns @ CL = 11 (DDR3-1600)
1.5ns @ CL = 9 (DDR3-1333)
1.875ns @ CL = 7 (DDR3-1066)
Operating temperature
Commercial (0C T C 95C)
Industrial (40C T C 95C)
Revision
VDD = V DDQ = 1.35V (1.2831.45V)

Backward compatible to V DD = V DDQ = 1.5V 0.075V
Supports DDR3L devices to be backward compatible in 1.5V applications
Differential bidirectional data strobe
8n-bit prefetch architecture
Differential clock inputs (CK, CK#)
8 internal banks
Nominal and dynamic on-die termination (ODT)
for data, strobe, and mask signals
Programmable CAS (READ) latency (CL)
Programmable posted CAS additive latency (AL)
Programmable CAS (WRITE) latency (CWL)
Fixed burst length (BL) of 8 and burst chop (BC) of 4
(via the mode register set [MRS])
Selectable BC4 or BL8 on-the-fly (OTF)
Self refresh mode
TC of 0C to 95C
64ms, 8192-cycle refresh at 0C to 85C
32ms at 85C to 95C
1G4
512M8
256M16
RH
RG
HA
LY
-093
-107
-125
-15E
-187E
None
IT
:E / :N
Table 1: Key Timing Parameters

Speed Grade
Data Rate (MT/s)
Target tRCD-tRP-CL
-0931, 2, 3, 4
2133
14-14-14
13.09
13.09
13.09
-1071, 2, 3
1866
13-13-13
13.91
13.91
13.91
-1251, 2
1600
11-11-11
13.75
13.75
13.75
-15E1
1333
9-9-9
13.5
13.5
13.5
-187E
1066
7-7-7
13.1
13.1
13.1
Notes:
tRCD
(ns)
tRP
(ns)
CL (ns)
1. Backward compatible to 1066, CL = 7 (-187E).

2. Backward compatible to 1333, CL = 9 (-15E).
3. Backward compatible to 1600, CL = 11 (-125).
PDF: 09005aef85993e22
4Gb_DDR3L_2133.pdf - Rev. L 9/14 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2011 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

Description
4. Backward compatible to 1866, CL = 13 (-107).
Table 2: Addressing
Parameter
1 Gig x 4
512 Meg x 8
256 Meg x 16
Configuration
128 Meg x 4 x 8 banks
Refresh count
8K
8K
8K
Row address
64K (A[15:0])
64K (A[15:0])
32K (A[14:0])
Bank address
8 (BA[2:0])
8 (BA[2:0])
8 (BA[2:0])
2K (A[11, 9:0])
1K (A[9:0])
1K (A[9:0])
1KB
1KB
2KB
Column address
Page size
Figure 1: DDR3L Part Numbers

Example Part Number:
MT41K512M8RG-125:N
-
Configuration
Package
Speed
Revision
MT41K
:E / :N
Revision
Temperature
Configuration
1 Gig x 4
1G4
Commercial
512 Meg x 8
512M8
Industrial temperature
256 Meg x 16
256M16
None
IT
Speed Grade
Package
78-ball 9mm x 10.5mm FBGA
Note:
Rev.
E
Mark
RH
-093
tCK
-107
tCK
= 1.07ns, CL = 13
-125
tCK
= 1.25ns, CL = 11
-15E
tCK
= 1.5ns, CL = 9
-187E
tCK
= 1.875ns, CL = 7
78-ball 7.5mm x 10.6mm FBGA
RG
96-ball 9mm x 14mm FBGA
HA
96-ball 7.5mm x 13.5mm FBGA
LY
= .938ns, CL = 14
1. Not all options listed can be combined to define an offered product. Use the part catalog search on
micron.com for available offerings.
FBGA Part Marking Decoder

Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the
part number. For a quick conversion of an FBGA code, see the FBGA Part Marking Decoder on micron.com.
PDF: 09005aef85993e22

Description
Contents
State Diagram ................................................................................................................................................ 11
Functional Description ................................................................................................................................... 12
Industrial Temperature ............................................................................................................................... 12
General Notes ............................................................................................................................................ 12
Functional Block Diagrams ............................................................................................................................. 14
Ball Assignments and Descriptions ................................................................................................................. 16
Package Dimensions ....................................................................................................................................... 22
Electrical Specifications .................................................................................................................................. 26
Absolute Ratings ......................................................................................................................................... 26
Input/Output Capacitance .......................................................................................................................... 27
Thermal Characteristics .................................................................................................................................. 28
Electrical Specifications I DD Specifications and Conditions ........................................................................... 29
Electrical Characteristics 1.35V Operating IDD Specifications ......................................................................... 40
Electrical Specifications DC and AC .............................................................................................................. 44
DC Operating Conditions ........................................................................................................................... 44
Input Operating Conditions ........................................................................................................................ 45
DDR3L 1.35V AC Overshoot/Undershoot Specification ................................................................................ 49
DDR3L 1.35V Slew Rate Definitions for Single-Ended Input Signals .............................................................. 52
DDR3L 1.35V Slew Rate Definitions for Differential Input Signals ................................................................. 54
ODT Characteristics ....................................................................................................................................... 55
1.35V ODT Resistors ................................................................................................................................... 56
ODT Sensitivity .......................................................................................................................................... 57
ODT Timing Definitions ............................................................................................................................. 57
Output Driver Impedance ............................................................................................................................... 61
34 Ohm Output Driver Impedance .............................................................................................................. 62
DDR3L 34 Ohm Driver ................................................................................................................................ 63
DDR3L 34 Ohm Output Driver Sensitivity .................................................................................................... 64
DDR3L Alternative 40 Ohm Driver ............................................................................................................... 65
DDR3L 40 Ohm Output Driver Sensitivity .................................................................................................... 65
Output Characteristics and Operating Conditions ............................................................................................ 67
Reference Output Load ............................................................................................................................... 70
Slew Rate Definitions for Single-Ended Output Signals ................................................................................. 70
Slew Rate Definitions for Differential Output Signals .................................................................................... 72
Speed Bin Tables ............................................................................................................................................ 73
Electrical Characteristics and AC Operating Conditions ................................................................................... 78
Command and Address Setup, Hold, and Derating ........................................................................................... 98
Data Setup, Hold, and Derating ...................................................................................................................... 105
Commands Truth Tables ............................................................................................................................. 113
Commands ................................................................................................................................................... 116
DESELECT ................................................................................................................................................ 116
NO OPERATION ........................................................................................................................................ 116
ZQ CALIBRATION LONG ........................................................................................................................... 116
ZQ CALIBRATION SHORT .......................................................................................................................... 116
ACTIVATE ................................................................................................................................................. 116
READ ........................................................................................................................................................ 116
WRITE ...................................................................................................................................................... 117
PRECHARGE ............................................................................................................................................. 118
REFRESH .................................................................................................................................................. 118
SELF REFRESH .......................................................................................................................................... 119
DLL Disable Mode ..................................................................................................................................... 120
PDF: 09005aef85993e22

Description
Input Clock Frequency Change ...................................................................................................................... 124
Write Leveling ............................................................................................................................................... 126
Write Leveling Procedure ........................................................................................................................... 128
Write Leveling Mode Exit Procedure ........................................................................................................... 130
Initialization ................................................................................................................................................. 131
Voltage Initialization / Change ....................................................................................................................... 133
VDD Voltage Switching ............................................................................................................................... 134
Mode Registers .............................................................................................................................................. 135
Mode Register 0 (MR0) ................................................................................................................................... 136
Burst Length ............................................................................................................................................. 136
Burst Type ................................................................................................................................................. 137
DLL RESET ................................................................................................................................................ 138
Write Recovery .......................................................................................................................................... 139
Precharge Power-Down (Precharge PD) ...................................................................................................... 139
CAS Latency (CL) ....................................................................................................................................... 139
Mode Register 1 (MR1) ................................................................................................................................... 141
DLL Enable/DLL Disable ........................................................................................................................... 141
Output Drive Strength ............................................................................................................................... 142
OUTPUT ENABLE/DISABLE ...................................................................................................................... 142
TDQS Enable ............................................................................................................................................. 142
On-Die Termination .................................................................................................................................. 143
WRITE LEVELING ..................................................................................................................................... 143
POSTED CAS ADDITIVE Latency ................................................................................................................ 143
Mode Register 2 (MR2) ................................................................................................................................... 144
CAS WRITE Latency (CWL) ........................................................................................................................ 145
AUTO SELF REFRESH (ASR) ....................................................................................................................... 145
SELF REFRESH TEMPERATURE (SRT) ........................................................................................................ 146
SRT vs. ASR ............................................................................................................................................... 146
DYNAMIC ODT ......................................................................................................................................... 146
Mode Register 3 (MR3) ................................................................................................................................... 147
MULTIPURPOSE REGISTER (MPR) ............................................................................................................ 147
MPR Functional Description ...................................................................................................................... 148
MPR Register Address Definitions and Bursting Order ................................................................................. 149
MPR Read Predefined Pattern .................................................................................................................... 154
MODE REGISTER SET (MRS) Command ........................................................................................................ 154
ZQ CALIBRATION Operation ......................................................................................................................... 155
ACTIVATE Operation ..................................................................................................................................... 156
READ Operation ............................................................................................................................................ 158
WRITE Operation .......................................................................................................................................... 169
DQ Input Timing ....................................................................................................................................... 177
PRECHARGE Operation ................................................................................................................................. 179
SELF REFRESH Operation .............................................................................................................................. 179
Extended Temperature Usage ........................................................................................................................ 181
Power-Down Mode ........................................................................................................................................ 182
RESET Operation ........................................................................................................................................... 190
On-Die Termination (ODT) ............................................................................................................................ 192
Functional Representation of ODT ............................................................................................................. 192
Nominal ODT ............................................................................................................................................ 192
Dynamic ODT ............................................................................................................................................... 195
Dynamic ODT Special Use Case ................................................................................................................. 195
Functional Description .............................................................................................................................. 195
Synchronous ODT Mode ................................................................................................................................ 201
PDF: 09005aef85993e22

Description
ODT Latency and Posted ODT .................................................................................................................... 201
Timing Parameters .................................................................................................................................... 201
ODT Off During READs .............................................................................................................................. 204
Asynchronous ODT Mode .............................................................................................................................. 206
Synchronous to Asynchronous ODT Mode Transition (Power-Down Entry) .................................................. 208
Asynchronous to Synchronous ODT Mode Transition (Power-Down Exit) ........................................................ 210
Asynchronous to Synchronous ODT Mode Transition (Short CKE Pulse) ...................................................... 212
PDF: 09005aef85993e22

Description
List of Figures
Figure 1: DDR3L Part Numbers ........................................................................................................................ 2
Figure 2: Simplified State Diagram ................................................................................................................. 11
Figure 3: 1 Gig x 4 Functional Block Diagram .................................................................................................. 14
Figure 4: 512 Meg x 8 Functional Block Diagram ............................................................................................. 15
Figure 5: 256 Meg x 16 Functional Block Diagram ........................................................................................... 15
Figure 6: 78-Ball FBGA x4, x8 (Top View) ...................................................................................................... 16
Figure 7: 96-Ball FBGA x16 (Top View) ......................................................................................................... 17
Figure 8: 78-Ball FBGA x4, x8 (RH) ............................................................................................................... 22
Figure 9: 78-Ball FBGA x4, x8 (RG) ............................................................................................................... 23
Figure 10: 96-Ball FBGA x16 (HA) ................................................................................................................. 24
Figure 11: 96-Ball FBGA x16 (LY) .................................................................................................................. 25
Figure 12: Thermal Measurement Point ......................................................................................................... 28
Figure 13: DDR3L 1.35V Input Signal .............................................................................................................. 48
Figure 14: Overshoot ..................................................................................................................................... 49
Figure 15: Undershoot ................................................................................................................................... 50
Figure 16: V IX for Differential Signals .............................................................................................................. 50
Figure 17: Single-Ended Requirements for Differential Signals ........................................................................ 50
Figure 18: Definition of Differential AC-Swing and tDVAC ............................................................................... 51
Figure 19: Nominal Slew Rate Definition for Single-Ended Input Signals .......................................................... 53
Figure 20: DDR3L 1.35V Nominal Differential Input Slew Rate Definition for DQS, DQS# and CK, CK# .............. 54
Figure 21: ODT Levels and I-V Characteristics ................................................................................................ 55
Figure 22: ODT Timing Reference Load .......................................................................................................... 58
Figure 23: tAON and tAOF Definitions ............................................................................................................ 59
Figure 24: tAONPD and tAOFPD Definitions ................................................................................................... 59
Figure 25: tADC Definition ............................................................................................................................. 60
Figure 26: Output Driver ................................................................................................................................ 61
Figure 27: DQ Output Signal .......................................................................................................................... 68
Figure 28: Differential Output Signal .............................................................................................................. 69
Figure 29: Reference Output Load for AC Timing and Output Slew Rate ........................................................... 70
Figure 30: Nominal Slew Rate Definition for Single-Ended Output Signals ....................................................... 71
Figure 31: Nominal Differential Output Slew Rate Definition for DQS, DQS# .................................................... 72
Figure 32: Nominal Slew Rate and tVAC for tIS (Command and Address Clock) ............................................. 101
Figure 33: Nominal Slew Rate for tIH (Command and Address Clock) ........................................................... 102
Figure 34: Tangent Line for tIS (Command and Address Clock) .................................................................... 103
Figure 35: Tangent Line for tIH (Command and Address Clock) .................................................................... 104
Figure 36: Nominal Slew Rate and tVAC for tDS (DQ Strobe) ......................................................................... 109
Figure 37: Nominal Slew Rate for tDH (DQ Strobe) ...................................................................................... 110
Figure 38: Tangent Line for tDS (DQ Strobe) ................................................................................................ 111
Figure 39: Tangent Line for tDH (DQ Strobe) ............................................................................................... 112
Figure 40: Refresh Mode ............................................................................................................................... 119
Figure 41: DLL Enable Mode to DLL Disable Mode ........................................................................................ 121
Figure 42: DLL Disable Mode to DLL Enable Mode ........................................................................................ 122
Figure 43: DLL Disable tDQSCK .................................................................................................................... 123
Figure 44: Change Frequency During Precharge Power-Down ........................................................................ 125
Figure 45: Write Leveling Concept ................................................................................................................. 126
Figure 46: Write Leveling Sequence ............................................................................................................... 129
Figure 47: Write Leveling Exit Procedure ....................................................................................................... 130
Figure 48: Initialization Sequence ................................................................................................................. 132
Figure 49: V DD Voltage Switching .................................................................................................................. 134
Figure 50: MRS to MRS Command Timing ( tMRD) ......................................................................................... 135
PDF: 09005aef85993e22

Description
Figure 51: MRS to nonMRS Command Timing ( tMOD) .................................................................................. 136
Figure 52: Mode Register 0 (MR0) Definitions ................................................................................................ 137
Figure 53: READ Latency .............................................................................................................................. 140
Figure 54: Mode Register 1 (MR1) Definition ................................................................................................. 141
Figure 55: READ Latency (AL = 5, CL = 6) ....................................................................................................... 144
Figure 57: CAS WRITE Latency ...................................................................................................................... 145
Figure 59: Multipurpose Register (MPR) Block Diagram ................................................................................. 148
Figure 60: MPR System Read Calibration with BL8: Fixed Burst Order Single Readout ..................................... 150
Figure 61: MPR System Read Calibration with BL8: Fixed Burst Order, Back-to-Back Readout .......................... 151
Figure 62: MPR System Read Calibration with BC4: Lower Nibble, Then Upper Nibble .................................... 152
Figure 63: MPR System Read Calibration with BC4: Upper Nibble, Then Lower Nibble .................................... 153
Figure 64: ZQ CALIBRATION Timing (ZQCL and ZQCS) ................................................................................. 155
Figure 65: Example: Meeting tRRD (MIN) and tRCD (MIN) ............................................................................. 156
Figure 66: Example: tFAW ............................................................................................................................. 157
Figure 67: READ Latency .............................................................................................................................. 158
Figure 68: Consecutive READ Bursts (BL8) .................................................................................................... 160
Figure 69: Consecutive READ Bursts (BC4) .................................................................................................... 160
Figure 70: Nonconsecutive READ Bursts ....................................................................................................... 161
Figure 71: READ (BL8) to WRITE (BL8) .......................................................................................................... 161
Figure 72: READ (BC4) to WRITE (BC4) OTF .................................................................................................. 162
Figure 73: READ to PRECHARGE (BL8) .......................................................................................................... 162
Figure 74: READ to PRECHARGE (BC4) ......................................................................................................... 163
Figure 75: READ to PRECHARGE (AL = 5, CL = 6) ........................................................................................... 163
Figure 76: READ with Auto Precharge (AL = 4, CL = 6) ..................................................................................... 163
Figure 77: Data Output Timing tDQSQ and Data Valid Window .................................................................... 165
Figure 78: Data Strobe Timing READs ......................................................................................................... 166
Figure 79: Method for Calculating tLZ and tHZ ............................................................................................... 167
Figure 80: tRPRE Timing ............................................................................................................................... 167
Figure 81: tRPST Timing ............................................................................................................................... 168
Figure 82: tWPRE Timing .............................................................................................................................. 170
Figure 83: tWPST Timing .............................................................................................................................. 170
Figure 84: WRITE Burst ................................................................................................................................ 171
Figure 85: Consecutive WRITE (BL8) to WRITE (BL8) ..................................................................................... 172
Figure 86: Consecutive WRITE (BC4) to WRITE (BC4) via OTF ........................................................................ 172
Figure 87: Nonconsecutive WRITE to WRITE ................................................................................................. 173
Figure 88: WRITE (BL8) to READ (BL8) .......................................................................................................... 173
Figure 89: WRITE to READ (BC4 Mode Register Setting) ................................................................................. 174
Figure 90: WRITE (BC4 OTF) to READ (BC4 OTF) ........................................................................................... 175
Figure 91: WRITE (BL8) to PRECHARGE ........................................................................................................ 176
Figure 92: WRITE (BC4 Mode Register Setting) to PRECHARGE ...................................................................... 176
Figure 93: WRITE (BC4 OTF) to PRECHARGE ................................................................................................ 177
Figure 94: Data Input Timing ........................................................................................................................ 178
Figure 95: Self Refresh Entry/Exit Timing ...................................................................................................... 180
Figure 96: Active Power-Down Entry and Exit ................................................................................................ 184
Figure 97: Precharge Power-Down (Fast-Exit Mode) Entry and Exit ................................................................. 184
Figure 98: Precharge Power-Down (Slow-Exit Mode) Entry and Exit ................................................................ 185
Figure 99: Power-Down Entry After READ or READ with Auto Precharge (RDAP) ............................................. 185
Figure 100: Power-Down Entry After WRITE .................................................................................................. 186
Figure 101: Power-Down Entry After WRITE with Auto Precharge (WRAP) ...................................................... 186
Figure 102: REFRESH to Power-Down Entry .................................................................................................. 187
PDF: 09005aef85993e22

Description
Figure 103:
Figure 104:
Figure 105:
Figure 106:
Figure 107:
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Figure 109:
Figure 110:
Figure 111:
Figure 112:
Figure 113:
Figure 114:
Figure 115:
Figure 116:
Figure 117:
Figure 118:
Figure 119:
Figure 120:
Figure 121:
ACTIVATE to Power-Down Entry ................................................................................................. 187

PRECHARGE to Power-Down Entry ............................................................................................. 188
MRS Command to Power-Down Entry ......................................................................................... 188
Power-Down Exit to Refresh to Power-Down Entry ....................................................................... 189
RESET Sequence ......................................................................................................................... 191
On-Die Termination ................................................................................................................... 192
Dynamic ODT: ODT Asserted Before and After the WRITE, BC4 .................................................... 198
Dynamic ODT: Without WRITE Command .................................................................................. 198
Dynamic ODT: ODT Pin Asserted Together with WRITE Command for 6 Clock Cycles, BL8 ............ 199
Dynamic ODT: ODT Pin Asserted with WRITE Command for 6 Clock Cycles, BC4 .......................... 200
Dynamic ODT: ODT Pin Asserted with WRITE Command for 4 Clock Cycles, BC4 .......................... 200
Synchronous ODT ...................................................................................................................... 202
Synchronous ODT (BC4) ............................................................................................................. 203
ODT During READs .................................................................................................................... 205
Asynchronous ODT Timing with Fast ODT Transition .................................................................. 207
Synchronous to Asynchronous Transition During Precharge Power-Down (DLL Off) Entry ............ 209
Asynchronous to Synchronous Transition During Precharge Power-Down (DLL Off) Exit ............... 211
Transition Period for Short CKE LOW Cycles with Entry and Exit Period Overlapping ..................... 213
Transition Period for Short CKE HIGH Cycles with Entry and Exit Period Overlapping ................... 213
PDF: 09005aef85993e22

Description
List of Tables
Table 1: Key Timing Parameters ....................................................................................................................... 1
Table 2: Addressing ......................................................................................................................................... 2
Table 3: 78-Ball FBGA x4, x8 Ball Descriptions .............................................................................................. 18
Table 4: 96-Ball FBGA x16 Ball Descriptions ................................................................................................. 20
Table 5: Absolute Maximum Ratings .............................................................................................................. 26
Table 6: DDR3L Input/Output Capacitance .................................................................................................... 27
Table 7: Thermal Characteristics .................................................................................................................... 28
Table 8: Timing Parameters Used for I DD Measurements Clock Units ............................................................ 29
Table 9: IDD0 Measurement Loop ................................................................................................................... 30
Table 10: IDD1 Measurement Loop .................................................................................................................. 31
Table 11: IDD Measurement Conditions for Power-Down Currents ................................................................... 32
Table 12: IDD2N and IDD3N Measurement Loop ................................................................................................ 33
Table 13: IDD2NT Measurement Loop .............................................................................................................. 33
Table 14: IDD4R Measurement Loop ................................................................................................................ 34
Table 15: IDD4W Measurement Loop ............................................................................................................... 35
Table 16: IDD5B Measurement Loop ................................................................................................................ 36
Table 17: IDD Measurement Conditions for IDD6, IDD6ET, and IDD8 .................................................................... 37
Table 18: IDD7 Measurement Loop .................................................................................................................. 38
Table 19: IDD Maximum Limits Die Rev E ........................................................................................................ 40
Table 20: IDD Maximum Limits Die Rev N ....................................................................................................... 42
Table 21: DDR3L 1.35V DC Electrical Characteristics and Operating Conditions .............................................. 44
Table 22: DDR3L 1.35V DC Electrical Characteristics and Input Conditions ..................................................... 45
Table 23: DDR3L 1.35V Input Switching Conditions Command and Address ................................................. 46
Table 24: DDR3L 1.35V Differential Input Operating Conditions (CK, CK# and DQS, DQS#) .............................. 47
Table 25: DDR3L Control and Address Pins ..................................................................................................... 49
Table 26: DDR3L 1.35V Clock, Data, Strobe, and Mask Pins ............................................................................. 49
Table 27: DDR3L 1.35V Minimum Required Time tDVAC for CK/CK#, DQS/DQS# Differential for AC Ringback ...
51
Table 28: Single-Ended Input Slew Rate Definition .......................................................................................... 52
Table 29: DDR3L 1.35V Differential Input Slew Rate Definition ........................................................................ 54
Table 30: On-Die Termination DC Electrical Characteristics ............................................................................ 55
Table 31: 1.35V RTT Effective Impedance ........................................................................................................ 56
Table 32: ODT Sensitivity Definition .............................................................................................................. 57
Table 33: ODT Temperature and Voltage Sensitivity ........................................................................................ 57
Table 34: ODT Timing Definitions .................................................................................................................. 58
Table 35: DDR3L(1.35V) Reference Settings for ODT Timing Measurements .................................................... 58
Table 36: DDR3L 34 Ohm Driver Impedance Characteristics ........................................................................... 62
Table 37: DDR3L 34 Ohm Driver Pull-Up and Pull-Down Impedance Calculations ........................................... 63
Table 38: DDR3L 34 Ohm Driver IOH/IOL Characteristics: V DD = V DDQ = [email protected] ..................................... 63
Table 41: DDR3L 34 Ohm Output Driver Sensitivity Definition ........................................................................ 64
Table 42: DDR3L 34 Ohm Output Driver Voltage and Temperature Sensitivity .................................................. 64
Table 43: DDR3L 40 Ohm Driver Impedance Characteristics ........................................................................... 65
Table 44: DDR3L 40 Ohm Output Driver Sensitivity Definition ........................................................................ 65
Table 45: 40 Ohm Output Driver Voltage and Temperature Sensitivity .............................................................. 66
Table 46: DDR3L Single-Ended Output Driver Characteristics ......................................................................... 67
Table 47: DDR3L Differential Output Driver Characteristics ............................................................................ 68
Table 48: DDR3L Differential Output Driver Characteristics V OX(AC) ................................................................. 69
Table 49: Single-Ended Output Slew Rate Definition ....................................................................................... 70
Table 50: Differential Output Slew Rate Definition .......................................................................................... 72
PDF: 09005aef85993e22

Description
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DDR3-1066 Speed Bins ................................................................................................................... 73

DDR3-1333 Speed Bins ................................................................................................................... 74
DDR3-1600 Speed Bins ................................................................................................................... 75
DDR3-1866 Speed Bins ................................................................................................................... 76
DDR3-2133 Speed Bins ................................................................................................................... 77
Electrical Characteristics and AC Operating Conditions .................................................................... 78
Electrical Characteristics and AC Operating Conditions for Speed Extensions .................................... 88
DDR3L Command and Address Setup and Hold Values 1 V/ns Referenced AC/DC-Based ................ 98
DDR3L-800/1066 Derating Values tIS/tIH AC160/DC90-Based ........................................................ 99
DDR3L-800/1066/1333/1600 Derating Values for tIS/tIH AC135/DC90-Based ................................. 99
DDR3L-1866/2133 Derating Values for tIS/tIH AC125/DC90-Based ................................................. 99
DDR3L Minimum Required Time tVAC Above V IH(AC) (Below V IL[AC]) for Valid ADD/CMD Transition . 100
DDR3L Data Setup and Hold Values at 1 V/ns (DQS, DQS# at 2 V/ns) AC/DC-Based ....................... 105
DDR3L Derating Values for tDS/tDH AC160/DC90-Based .............................................................. 106
DDR3L Derating Values for tDS/tDH AC135/DC90-Based .............................................................. 106
DDR3L Derating Values for tDS/tDH AC130/DC90-Based at 2V/ns ................................................. 107
DDR3L Minimum Required Time tVAC Above V IH(AC) (Below V IL(AC)) for Valid DQ Transition ............. 108
Truth Table Command ................................................................................................................. 113
Truth Table CKE .......................................................................................................................... 115
READ Command Summary ............................................................................................................ 117
WRITE Command Summary .......................................................................................................... 117
READ Electrical Characteristics, DLL Disable Mode ......................................................................... 123
Write Leveling Matrix ..................................................................................................................... 127
Burst Order .................................................................................................................................... 138
MPR Functional Description of MR3 Bits ........................................................................................ 148
MPR Readouts and Burst Order Bit Mapping ................................................................................... 149
Self Refresh Temperature and Auto Self Refresh Description ............................................................ 181
Self Refresh Mode Summary ........................................................................................................... 181
Command to Power-Down Entry Parameters .................................................................................. 182
Power-Down Modes ....................................................................................................................... 183
Truth Table ODT (Nominal) ......................................................................................................... 193
ODT Parameters ............................................................................................................................ 193
Write Leveling with Dynamic ODT Special Case .............................................................................. 195
Dynamic ODT Specific Parameters ................................................................................................. 196
Mode Registers for RTT,nom ............................................................................................................. 196
Mode Registers for RTT(WR) ............................................................................................................. 197
Timing Diagrams for Dynamic ODT ................................................................................................ 197
Synchronous ODT Parameters ........................................................................................................ 202
Asynchronous ODT Timing Parameters for All Speed Bins ............................................................... 207
ODT Parameters for Power-Down (DLL Off) Entry and Exit Transition Period ................................... 209
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10

State Diagram
State Diagram
Figure 2: Simplified State Diagram
CKE L
Power
applied
MRS, MPR,
write
leveling
Initialization
Reset
procedure
Power
on
SRE
ZQCL
From any
state
RESET
ZQ
calibration
Self
refresh
MRS
SRX
REF
ZQCL/ZQCS
Refreshing
Idle
PDE
ACT
PDX
Active
powerdown
Precharge
powerdown
Activating
PDX
CKE L
CKE L
PDE
Bank
active
WRITE
WRITE
READ
WRITE AP
Writing
READ
READ AP
READ
WRITE
WRITE AP
Reading
READ AP
WRITE AP
READ AP
PRE, PREA
Writing
PRE, PREA
PRE, PREA
Precharging
Reading
Automatic
sequence
Command
sequence
ACT = ACTIVATE
MPR = Multipurpose register
MRS = Mode register set
PDE = Power-down entry
PDX = Power-down exit
PRE = PRECHARGE
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PREA = PRECHARGE ALL

READ = RD, RDS4, RDS8
READ AP = RDAP, RDAPS4, RDAPS8
REF = REFRESH
RESET = START RESET PROCEDURE
SRE = Self refresh entry
11
SRX = Self refresh exit

WRITE = WR, WRS4, WRS8
WRITE AP = WRAP, WRAPS4, WRAPS8
ZQCL = ZQ LONG CALIBRATION
ZQCS = ZQ SHORT CALIBRATION

Functional Description
DDR3 SDRAM uses a double data rate architecture to achieve high-speed operation.
The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write
operation for the DDR3 SDRAM effectively consists of a single 8n-bit-wide, four-clockcycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, onehalf-clock-cycle data transfers at the I/O pins.
The differential data strobe (DQS, DQS#) is transmitted externally, along with data, for
use in data capture at the DDR3 SDRAM input receiver. DQS is center-aligned with data
for WRITEs. The read data is transmitted by the DDR3 SDRAM and edge-aligned to the
data strobes.
The DDR3 SDRAM operates from a differential clock (CK and CK#). The crossing of CK
going HIGH and CK# going LOW is referred to as the positive edge of CK. Control, command, and address signals are registered at every positive edge of CK. Input data is registered on the first rising edge of DQS after the WRITE preamble, and output data is referenced on the first rising edge of DQS after the READ preamble.
Read and write accesses to the DDR3 SDRAM are burst-oriented. Accesses start at a selected location and continue for a programmed number of locations in a programmed
sequence. Accesses begin with the registration of an ACTIVATE command, which is then
followed by a READ or WRITE command. The address bits registered coincident with
the ACTIVATE command are used to select the bank and row to be accessed. The address bits registered coincident with the READ or WRITE commands are used to select
the bank and the starting column location for the burst access.
The device uses a READ and WRITE BL8 and BC4. An auto precharge function may be
enabled to provide a self-timed row precharge that is initiated at the end of the burst
access.
As with standard DDR SDRAM, the pipelined, multibank architecture of DDR3 SDRAM
allows for concurrent operation, thereby providing high bandwidth by hiding row precharge and activation time.
A self refresh mode is provided, along with a power-saving, power-down mode.
Industrial Temperature
The industrial temperature (IT) device requires that the case temperature not exceed
40C or 95C. JEDEC specifications require the refresh rate to double when T C exceeds
85C; this also requires use of the high-temperature self refresh option. Additionally,
ODT resistance and the input/output impedance must be derated when T C is < 0C or
>95C.
General Notes
The functionality and the timing specifications discussed in this data sheet are for the
DLL enable mode of operation (normal operation).
Throughout this data sheet, various figures and text refer to DQs as DQ. DQ is to be
interpreted as any and all DQ collectively, unless specifically stated otherwise.
The terms DQS and CK found throughout this data sheet are to be interpreted as
DQS, DQS# and CK, CK# respectively, unless specifically stated otherwise.
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Complete functionality may be described throughout the document; any page or diagram may have been simplified to convey a topic and may not be inclusive of all requirements.
Any specific requirement takes precedence over a general statement.
Any functionality not specifically stated is considered undefined, illegal, and not supported, and can result in unknown operation.
Row addressing is denoted as A[n:0]. For example, 1Gb: n = 12 (x16); 1Gb: n = 13 (x4,
x8); 2Gb: n = 13 (x16) and 2Gb: n = 14 (x4, x8); 4Gb: n = 14 (x16); and 4Gb: n = 15 (x4,
x8).
Dynamic ODT has a special use case: when DDR3 devices are architected for use in a
single rank memory array, the ODT ball can be wired HIGH rather than routed. Refer
to the Dynamic ODT Special Use Case section.
A x16 device's DQ bus is comprised of two bytes. If only one of the bytes needs to be
used, use the lower byte for data transfers and terminate the upper byte as noted:
Connect UDQS to ground via 1k* resistor.

Connect UDQS# to V DD via 1k* resistor.
Connect UDM to V DD via 1k* resistor.
Connect DQ[15:8] individually to either V SS, V DD, or V REF via 1k resistors,* or float
DQ[15:8].
*If ODT is used, 1k resistor should be changed to 4x that of the selected ODT.
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13

Functional Block Diagrams

DDR3 SDRAM is a high-speed, CMOS dynamic random access memory. It is internally
configured as an 8-bank DRAM.
Figure 3: 1 Gig x 4 Functional Block Diagram
ODT
control
ODT
ZQ
RZQ
ZQCL, ZQCS
CKE
VSSQ
To pull-up/pull-down
networks
ZQ CAL
RESET#
Control
logic
A12
CK, CK#
VDDQ/2
BC4 (burst chop)
Command
decode
CS#
RAS#
CAS#
WE#
Bank 7
Bank 6
Bank 5
Bank 4
Bank 3
Bank 2
Bank 1
OTF
Mode registers
Refresh
counter
19
16
Rowaddress
MUX
16
16
Bank 0
rowaddress
latch
and
decoder
65,536
A[15:0]
BA[2:0]
19
Address
register
256
(x32)
32
READ
FIFO
and
data
MUX
Columnaddress
counter/
latch
DQ[3:0]
READ
drivers
DQ[3:0]
DQS, DQS#
VDDQ/2
RTT,nom
sw1
RTT(WR)
sw2
DM
(1, 2)
32
Data
interface
4
Data
WRITE
drivers
and
input
logic
8
3
sw2
(1 . . . 4)
BC4
DQS, DQS#
VDDQ/2
RTT,nom
sw1
RTT(WR)
sw2
DM
Columns 0, 1, and 2
CK, CK#
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32
Column
decoder
11
RTT(WR)
DLL
BC4
OTF
I/O gating
DM mask logic
Bank
control
logic
CK, CK#
sw1
Bank 0
memory
array
(65,536 x 256 x 32)
8,192
Columns 0, 1, and 2
Bank 7
Bank 6
Bank 5
Bank 4
Bank 3
Bank 2
Bank 1
Sense amplifiers
RTT,nom
14
Column 2
(select upper or
lower nibble for BC4)

Figure 4: 512 Meg x 8 Functional Block Diagram
ODT
control
ODT
ZQ
RZQ
Control
logic
CKE
VSSQ
To ODT/output drivers
ZQ CAL
RESET#
A12
ZQCL, ZQCS
CK, CK#
VDDQ/2
BC4 (burst chop)

Command
decode
CS#
RAS#
CAS#
WE#
Bank 7
Bank 6
Bank 5
Bank 4
Bank 3
Bank 2
Bank 1
OTF
Mode registers
Refresh
counter
16
Rowaddress
MUX
19
16
Sense amplifiers
8,192
19
Address
register
Bank
control
logic
sw2
DLL
(1 . . . 8)
64
DQ8
READ
FIFO
and
data
MUX
TDQS#
DQ[7:0]
Read
drivers
DQ[7:0]
DQS, DQS#
VDDQ/2
64
BC4
BC4
OTF
RTT,nom
sw1
RTT(WR)
sw2
(1, 2)
(128
x64)
64
Data
interface
Data
Column
decoder
Columnaddress
counter/
latch
10
CK, CK#
I/O gating
DM mask logic
3
A[15:0]
BA[2:0]
RTT(WR)
RTT,nom
sw1
Bank 0
Memory
array
(65,536 x 128 x 64)
Bank 0
rowaddress
65,536
latch
and
decoder
16
Columns 0, 1, and 2
Bank 7
Bank 6
Bank 5
Bank 4
Bank 3
Bank 2
Bank 1
Write
drivers
and
input
logic
VDDQ/2
RTT,nom
sw1
RTT(WR)
sw2
7
3
DQS/DQS#
DM/TDQS
(shared pin)
Columns 0, 1, and 2
CK, CK#
Column 2
(select upper or
Figure 5: 256 Meg x 16 Functional Block Diagram

ODT
control
ODT
ZQ
RZQ
ZQ CAL
RESET#
Control
logic
CKE
VSSQ
To ODT/output drivers
ZQCL, ZQCS
A12
CK, CK#
VDDQ/2
BC4 (burst chop)
Command
decode
CS#
RAS#
CAS#
WE#
Bank 7
Bank 6
Bank 5
Bank 4
Bank 3
Bank 2
Bank 1
OTF
Mode registers
Refresh
counter
18
13
Rowaddress
MUX
15
15
Bank 0
rowaddress
latch
and
decoder
32,768
Column 0, 1, and 2
Bank 7
Bank 6
Bank 5
Bank 4
Bank 3
Bank 2
Bank 1
RTT,nom
CK, CK#
DLL
(1 . . . 16)
Bank 0
memory
array
(32,768 x 128 x 128)
128
READ
FIFO
and
data
MUX
16
DQ[15:0]
READ
drivers
LDQS, LDQS#, UDQS, UDQS#
A[14:0]
BA[2:0]
18
Address
register
Bank
control
logic
BC4
128
I/O gating
DM mask logic
LDQS, LDQS#
Data
interface
16
Data
WRITE
drivers
and
input
logic
7
3
UDQS, UDQS#
VDDQ/2
128
RTT,nom
sw1
RTT(WR)
sw2
(1, 2)
LDM/UDM
Columns 0, 1, and 2
CK, CK#
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RTT(WR)
sw2
sw1
BC4
OTF
Column
decoder
10
RTT,nom
(1 . . . 4)
(128
x128)
Columnaddress
counter/
latch
DQ[15:0]
VDDQ/2
Sense amplifiers
16,384
RTT(WR)
sw2
sw1
15
Column 2
(select upper or

Ball Assignments and Descriptions

Figure 6: 78-Ball FBGA x4, x8 (Top View)
VSS
VDD
VSS
VDDQ
NC
NF, NF/TDQS#
VSS
VDD
VSSQ
DQ0
DM, DM/TDQS
VSSQ
VDDQ
DQ2
DQS
DQ1
DQ3
VSSQ
NF, DQ6 DQS#
VDD
VSS
VSSQ
A
B
C
D
VSSQ
E
VREFDQ
NF, DQ7 NF, DQ5
VDDQ NF, DQ4
VDDQ
F
NC
VSS
RAS#
CK
VSS
NC
ODT
VDD
CAS#
CK#
VDD
CKE
NC
CS#
WE#
A10/AP
ZQ
NC
VSS
BA0
BA2
A15
VREFCA
VSS
VDD
A3
A0
A12/BC#
BA1
VDD
VSS
A5
A2
A1
A4
VSS
VDD
A7
A9
A11
A6
VDD
VSS
RESET#
A13
A14
A8
VSS
G
H
J
K
L
M
N
Notes:
PDF: 09005aef85993e22
1. Ball descriptions listed in Table 3 (page 18) are listed as x4, x8 if unique; otherwise,
x4 and x8 are the same.
2. A comma separates the configuration; a slash defines a selectable function.
Example D7 = NF, NF/TDQS#. NF applies to the x4 configuration only. NF/TDQS# applies
to the x8 configuration onlyselectable between NF or TDQS# via MRS (symbols are defined in Table 3).
16

Figure 7: 96-Ball FBGA x16 (Top View)
A
B
VDDQ
DQ13
VSSQ
DQ15
DQ12
VDDQ
VSS
VDD
VSS
UDQS#
DQ14
VSSQ
VDDQ
DQ11
DQ9
UDQS
DQ10
VDDQ
VSSQ
VDDQ
UDM
DQ8
VSSQ
VDD
VSS
VSSQ
DQ0
LDM
VSSQ
VDDQ
VDDQ
DQ2
LDQS
DQ1
DQ3
VSSQ
VSSQ
DQ6
LDQS#
VDD
VSS
VSSQ
VREFDQ
VDDQ
DQ4
DQ7
DQ5
VDDQ
NC
VSS
RAS#
CK
VSS
NC
ODT
VDD
CAS#
CK#
VDD
CKE
NC
CS#
WE#
A10/AP
ZQ
NC
VSS
BA0
BA2
NC
VREFCA
VSS
VDD
A3
A0
A12/BC#
BA1
VDD
VSS
A5
A2
A1
A4
VSS
VDD
A7
A9
A11
A6
VDD
VSS
RESET#
A13
A14
A8
VSS
D
E
F
G
H
J
K
L
M
N
P
R
T
Notes:
PDF: 09005aef85993e22
1. Ball descriptions listed in Table 4 (page 20) are listed as x4, x8 if unique; otherwise,
x4 and x8 are the same.
2. A comma separates the configuration; a slash defines a selectable function.
Example D7 = NF, NF/TDQS#. NF applies to the x4 configuration only. NF/TDQS# applies
to the x8 configuration onlyselectable between NF or TDQS# via MRS (symbols are defined in Table 3).
17

Table 3: 78-Ball FBGA x4, x8 Ball Descriptions
Symbol
Type
Description
A[15:13], A12/BC#,
A11, A10/AP, A[9:0]
Input
Address inputs: Provide the row address for ACTIVATE commands, and the column
address and auto precharge bit (A10) for READ/WRITE commands, to select one
location out of the memory array in the respective bank. A10 sampled during a
PRECHARGE command determines whether the PRECHARGE applies to one bank
(A10 LOW, bank selected by BA[2:0]) or all banks (A10 HIGH). The address inputs also
provide the op-code during a LOAD MODE command. Address inputs are referenced
to VREFCA. A12/BC#: When enabled in the mode register (MR), A12 is sampled during
READ and WRITE commands to determine whether burst chop (on-the-fly) will be
performed (HIGH = BL8 or no burst chop, LOW = BC4). See Table 68 (page 113).
BA[2:0]
Input
Bank address inputs: BA[2:0] define the bank to which an ACTIVATE, READ,
WRITE, or PRECHARGE command is being applied. BA[2:0] define which mode
register (MR0, MR1, MR2, or MR3) is loaded during the LOAD MODE command.
BA[2:0] are referenced to VREFCA.
CK, CK#
Input
Clock: CK and CK# are differential clock inputs. All control and address input signals
are sampled on the crossing of the positive edge of CK and the negative edge of
CK#. Output data strobe (DQS, DQS#) is referenced to the crossings of CK and CK#.
CKE
Input
Clock enable: CKE enables (registered HIGH) and disables (registered LOW)
internal circuitry and clocks on the DRAM. The specific circuitry that is enabled/
disabled is dependent upon the DDR3 SDRAM configuration and operating mode.
Taking CKE LOW provides PRECHARGE POWER-DOWN and SELF REFRESH operations
(all banks idle), or active power-down (row active in any bank). CKE is synchronous
for power-down entry and exit and for self refresh entry. CKE is asynchronous for
self refresh exit. Input buffers (excluding CK, CK#, CKE, RESET#, and ODT) are
disabled during POWER-DOWN. Input buffers (excluding CKE and RESET#) are disabled during SELF REFRESH. CKE is referenced to VREFCA.
CS#
Input
Chip select: CS# enables (registered LOW) and disables (registered HIGH) the
command decoder. All commands are masked when CS# is registered HIGH. CS#
provides for external rank selection on systems with multiple ranks. CS# is considered
part of the command code. CS# is referenced to VREFCA.
DM
Input
Input data mask: DM is an input mask signal for write data. Input data is masked
when DM is sampled HIGH along with the input data during a write access.
Although the DM ball is input-only, the DM loading is designed to match that of the
DQ and DQS balls. DM is referenced to VREFDQ. DM has an optional use as TDQS on
the x8.
ODT
Input
On-die termination: ODT enables (registered HIGH) and disables (registered LOW)
termination resistance internal to the DDR3 SDRAM. When enabled in normal
operation, ODT is only applied to each of the following balls: DQ[7:0], DQS, DQS#,
and DM for the x8; DQ[3:0], DQS, DQS#, and DM for the x4. The ODT input is
ignored if disabled via the LOAD MODE command. ODT is referenced to VREFCA.
RAS#, CAS#, WE#
Input
Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command
being entered and are referenced to VREFCA.
RESET#
Input
Reset: RESET# is an active LOW CMOS input referenced to VSS. The RESET# input receiver is a CMOS input defined as a rail-to-rail signal with DC HIGH 0.8 VDD and
DC LOW 0.2 VDDQ. RESET# assertion and desertion are asynchronous.
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Table 3: 78-Ball FBGA x4, x8 Ball Descriptions (Continued)
Symbol
Type
DQ[3:0]
I/O
Data input/output: Bidirectional data bus for the x4 configuration. DQ[3:0] are
referenced to VREFDQ.
DQ[7:0]
I/O
Data input/output: Bidirectional data bus for the x8 configuration. DQ[7:0] are
referenced to VREFDQ.
DQS, DQS#
I/O
Data strobe: Output with read data. Edge-aligned with read data. Input with write
data. Center-aligned to write data.
TDQS, TDQS#
Output
Termination data strobe: Applies to the x8 configuration only. When TDQS is

enabled, DM is disabled, and the TDQS and TDQS# balls provide termination
resistance.
VDD
Supply
Power supply: 1.5V 0.075V.
VDDQ
Supply
DQ power supply: 1.5V 0.075V. Isolated on the device for improved noise immunity.
VREFCA
Supply
Reference voltage for control, command, and address: VREFCA must be

maintained at all times (including self refresh) for proper device operation.
VREFDQ
Supply
Reference voltage for data: VREFDQ must be maintained at all times (excluding self
refresh) for proper device operation.
VSS
Supply
Ground.
VSSQ
Supply
DQ ground: Isolated on the device for improved noise immunity.
ZQ
Reference
NC
No connect: These balls should be left unconnected (the ball has no connection to
the DRAM or to other balls).
NF
No function: When configured as a x4 device, these balls are NF. When configured
as a x8 device, these balls are defined as TDQS#, DQ[7:4].
PDF: 09005aef85993e22
Description
External reference ball for output drive calibration: This ball is tied to an
external 240 resistor (RZQ), which is tied to VSSQ.
19

Table 4: 96-Ball FBGA x16 Ball Descriptions
Symbol
Type
Description
A[14:13], A12/BC#,
A11, A10/AP, A[9:0]
Input
Address inputs: Provide the row address for ACTIVATE commands, and the column
address and auto precharge bit (A10) for READ/WRITE commands, to select one
location out of the memory array in the respective bank. A10 sampled during a
PRECHARGE command determines whether the PRECHARGE applies to one bank
(A10 LOW, bank selected by BA[2:0]) or all banks (A10 HIGH). The address inputs also
provide the op-code during a LOAD MODE command. Address inputs are referenced
to VREFCA. A12/BC#: When enabled in the mode register (MR), A12 is sampled during
READ and WRITE commands to determine whether burst chop (on-the-fly) will be
performed (HIGH = BL8 or no burst chop, LOW = BC4). See Table 68 (page 113).
BA[2:0]
Input
Bank address inputs: BA[2:0] define the bank to which an ACTIVATE, READ,
WRITE, or PRECHARGE command is being applied. BA[2:0] define which mode
register (MR0, MR1, MR2, or MR3) is loaded during the LOAD MODE command.
BA[2:0] are referenced to VREFCA.
CK, CK#
Input
Clock: CK and CK# are differential clock inputs. All control and address input signals
are sampled on the crossing of the positive edge of CK and the negative edge of
CK#. Output data strobe (DQS, DQS#) is referenced to the crossings of CK and CK#.
CKE
Input
Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal
circuitry and clocks on the DRAM. The specific circuitry that is enabled/disabled is dependent upon the DDR3 SDRAM configuration and operating mode. Taking CKE
LOW provides PRECHARGE POWER-DOWN and SELF REFRESH operations (all banks
idle),or active power-down (row active in any bank). CKE is synchronous for powerdown entry and exit and for self refresh entry. CKE is asynchronous for self refresh
exit. Input buffers (excluding CK, CK#, CKE, RESET#, and ODT) are disabled during
POWER-DOWN. Input buffers (excluding CKE and RESET#) are disabled during SELF
REFRESH. CKE is referenced to VREFCA.
CS#
Input
Chip select: CS# enables (registered LOW) and disables (registered HIGH) the
command decoder. All commands are masked when CS# is registered HIGH. CS# provides for external rank selection on systems with multiple ranks. CS# is considered
part of the command code. CS# is referenced to VREFCA.
LDM
Input
Input data mask: LDM is a lower-byte, input mask signal for write data. Lower-byte
input data is masked when LDM is sampled HIGH along with the input data during a
write access. Although the LDM ball is input-only, the LDM loading is
designed to match that of the DQ and DQS balls. LDM is referenced to VREFDQ.
ODT
Input
On-die termination: ODT enables (registered HIGH) and disables (registered LOW)
termination resistance internal to the DDR3 SDRAM. When enabled in normal
operation, ODT is only applied to each of the following balls: DQ[15:0], LDQS,
LDQS#, UDQS, UDQS#, LDM, and UDM for the x16; DQ0[7:0], DQS, DQS#, DM/TDQS,
and NF/TDQS# (when TDQS is enabled) for the x8; DQ[3:0], DQS, DQS#, and DM for
the x4. The ODT input is ignored if disabled via the LOAD MODE command. ODT is
referenced to VREFCA.
RAS#, CAS#, WE#
Input
Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command
being entered and are referenced to VREFCA.
RESET#
Input
Reset: RESET# is an active LOW CMOS input referenced to VSS. The RESET# input receiver is a CMOS input defined as a rail-to-rail signal with DC HIGH 0.8 VDD and
DC LOW 0.2 VDDQ. RESET# assertion and desertion are asynchronous.
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20

Table 4: 96-Ball FBGA x16 Ball Descriptions (Continued)
Symbol
Type
UDM
Input
DQ[7:0]
I/O
Data input/output: Lower byte of bidirectional data bus for the x16 configuration.
DQ[7:0] are referenced to VREFDQ.
DQ[15:8]
I/O
Data input/output: Upper byte of bidirectional data bus for the x16 configuration.
DQ[15:8] are referenced to VREFDQ.
LDQS, LDQS#
I/O
Lower byte data strobe: Output with read data. Edge-aligned with read data.
Input with write data. Center-aligned to write data.
UDQS, UDQS#
I/O
Upper byte data strobe: Output with read data. Edge-aligned with read data.
Input with write data. DQS is center-aligned to write data.
VDD
Supply
Power supply: 1.5V 0.075V.
VDDQ
Supply
DQ power supply: 1.5V 0.075V. Isolated on the device for improved noise immunity.
VREFCA
Supply
Reference voltage for control, command, and address: VREFCA must be

maintained at all times (including self refresh) for proper device operation.
VREFDQ
Supply
Reference voltage for data: VREFDQ must be maintained at all times (excluding self
refresh) for proper device operation.
VSS
Supply
Ground.
VSSQ
Supply
DQ ground: Isolated on the device for improved noise immunity.
ZQ
Reference
NC
PDF: 09005aef85993e22
Description
Input data mask: UDM is an upper-byte, input mask signal for write data. Upperbyte input data is masked when UDM is sampled HIGH along with that input data
during a WRITE access. Although the UDM ball is input-only, the UDM loading is
designed to match that of the DQ and DQS balls. UDM is referenced to VREFDQ.
External reference ball for output drive calibration: This ball is tied to an
external 240 resistor (RZQ), which is tied to VSSQ.
No connect: These balls should be left unconnected (the ball has no connection to
the DRAM or to other balls).
21

Package Dimensions
Package Dimensions
Figure 8: 78-Ball FBGA x4, x8 (RH)
0.155
Seating plane
78X 0.45
Dimensions apply
to solder balls postreflow on 0.35 SMD
ball pads.
0.12 A
1.8 CTR
Nonconductive
overmold
Ball A1 ID
(covered by SR)
9
Ball A1 ID
1
A
B
C
D
E
F
10.5 0.1
9.6 CTR
H
J
K
L
M
N
0.8 TYP
0.8 TYP
1.1 0.1
6.4 CTR
0.25 MIN
9 0.1
Notes:
PDF: 09005aef85993e22
1. All dimensions are in millimeters.

2. Solder ball material: SAC305 (96.5% Sn, 3% Ag, 0.5% Cu).
22

Package Dimensions
Figure 9: 78-Ball FBGA x4, x8 (RG)
0.155
Seating plane
A
0.12 A
1.8 CTR
nonconductive
overmold
78X 0.47
Dimensions apply
to solder balls postreflow on 0.42 SMD
ball pads.
Ball A1 ID
(covered by SR)
9 8 7
Ball A1 ID
3 2 1
A
B
C
D
E
F
G
H
J
K
L
M
N
10.6 0.1
9.6 CTR
0.8 TYP
1.1 0.1
0.8 TYP
6.4 CTR
0.25 MIN
7.5 0.1
Notes:
PDF: 09005aef85993e22

23

Package Dimensions
Figure 10: 96-Ball FBGA x16 (HA)
0.155
Seating plane
96X 0.45
Dimensions
apply to solder
balls post-reflow
on 0.35 SMD
ball pads.
1.8 CTR
Nonconductive
overmold
0.12 A
Ball A1 Index
(covered by SR)
Ball A1 Index
A
B
C
D
E
F
G
H
12 CTR
14 0.1
K
L
M
N
P
R
0.8 TYP
1.1 0.1
0.8 TYP
6.4 CTR
0.25 MIN
9 0.1
Notes:
PDF: 09005aef85993e22

24

Package Dimensions
Figure 11: 96-Ball FBGA x16 (LY)
0.155
Seating plane
A
0.12 A
1.8 CTR
Nonconductive
overmold
96X 0.47
Dimensions apply
to solder balls postreflow on 0.42
SMD ball pads.
Ball A1 ID
(covered by SR)
9 8 7
Ball A1 ID
3 2 1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
13.5 0.1
12 CTR
0.8 TYP
1.1 0.1
0.8 TYP
6.4 CTR
0.29 MIN
7.5 0.1
Notes:
PDF: 09005aef85993e22

25

Electrical Specifications
Absolute Ratings
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability.
Table 5: Absolute Maximum Ratings
Symbol
Parameter
Min
Max
Unit
Notes
1
VDD
VDD supply voltage relative to VSS
0.4
1.975
VDDQ
VDD supply voltage relative to VSSQ
0.4
1.975
VIN, VOUT
Voltage on any pin relative to VSS
0.4
1.975
95
2, 3
Operating case temperature Industrial
40
95
2, 3
Storage temperature
55
150
TC
TSTG
Operating case temperature Commercial
Notes:
PDF: 09005aef85993e22
1. VDD and VDDQ must be within 300mV of each other at all times, and VREF must not be
greater than 0.6 VDDQ. When VDD and VDDQ are <500mV, VREF can be 300mV.
2. MAX operating case temperature. TC is measured in the center of the package.
3. Device functionality is not guaranteed if the DRAM device exceeds the maximum TC during operation.
26

Input/Output Capacitance
Table 6: DDR3L Input/Output Capacitance
Note 1 applies to the entire table
DDR3L
-800
Capacitance
DDR3L
-1066
DDR3L
-1333
DDR3L
-1600
DDR3L
-1866
DDR3L
-2133
Parameters
Sym
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
CK and CK#
CCK
0.8
1.6
0.8
1.6
0.8
1.4
0.8
1.4
0.8
1.3
0.8
1.3
pF
C: CK to CK#
CDCK
0.0
0.15
0.0
0.15
0.0
0.15
0.0
0.15
0.0
0.15
0.0
0.15
pF
CIO
1.4
2.5
1.4
2.5
1.4
2.3
1.4
2.2
1.4
2.1
1.4
2.1
pF
Single-end
I/O: DQ, DM
Differential
I/O: DQS,
DQS#, TDQS,
TDQS#
CIO
C: DQS to
DQS#, TDQS,
TDQS#
CDDQS
C: DQ to
DQS
Inputs (CTRL,
CMD, ADDR)
C: CTRL to
CK
C:
CMD_ADDR
to CK
Max Unit Notes
2
3
CDIO
CI
CDI_CTRL
CDI_CMD
1.4
2.5
1.4
2.5
1.4
2.3
1.4
2.2
1.4
2.1
1.4
2.1
0.0
0.2
0.0
0.2
0.0
0.15
0.0
0.15
0.0
0.15
0.0
0.15
CZQ
Reset pin
capacitance
CRE
0.5
0.3
0.5
0.3
0.5
0.3
0.5
0.3
0.5
0.3
0.5
0.3
0.75
1.3
0.75
1.3
0.75
1.3
0.75
1.2
0.75
1.2
0.75
1.2
0.5
0.3
0.5
0.3
0.4
0.2
0.4
0.2
0.4
0.2
0.4
0.2
0.5
0.5
0.5
0.5
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
pF
pF
pF
4
5
6
7
pF
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
Notes:
PDF: 09005aef85993e22
3
pF
_ADDR
ZQ pin
capacitance
pF
pF
pF
1. VDD = 1.35V (1.2831.45V), VDDQ = VDD, VREF = VSS, f = 100 MHz, TC = 25C. VOUT(DC) = 0.5
VDDQ, VOUT = 0.1V (peak-to-peak).
2. DM input is grouped with I/O pins, reflecting the fact that they are matched in loading.
3. Includes TDQS, TDQS#. CDDQS is for DQS vs. DQS# and TDQS vs. TDQS# separately.
4. CDIO = CIO(DQ) - 0.5 (CIO(DQS) + CIO(DQS#)).
5. Excludes CK, CK#; CTRL = ODT, CS#, and CKE; CMD = RAS#, CAS#, and WE#; ADDR =
A[n:0], BA[2:0].
6. CDI_CTRL = CI(CTRL) - 0.5 (CCK(CK) + CCK(CK#)).
7. CDI_CMD_ADDR = CI(CMD_ADDR) - 0.5 (CCK(CK) + CCK(CK#)).
27

Thermal Characteristics
Thermal Characteristics
Table 7: Thermal Characteristics
Parameter/Condition
Value
Units
Symbol
Notes
Operating case temperature Commercial
0 to 85
TC
1, 2, 3
0 to 95
TC
1, 2, 3, 4
Operating case temperature Industrial
40 to 85
TC
1, 2, 3
40 to 95
TC
1, 2, 3, 4
C/W
JC
C/W
JC
Junction-to-case (TOP) Die Rev E

Junction-to-case (TOP) Die Rev N
78-ball RH
4.0
96-ball HA
3.9
78-ball RG
5.7
96-ball LY
5.6
1. MAX operating case temperature. TC is measured in the center of the package.

2. A thermal solution must be designed to ensure the DRAM device does not exceed the
maximum TC during operation.
3. Device functionality is not guaranteed if the DRAM device exceeds the maximum TC during operation.
4. If TC exceeds 85C, the DRAM must be refreshed externally at 2x refresh, which is a 3.9s
interval refresh rate. The use of SRT or ASR(if available) must be enabled.
5. The thermal resistance data is based off of a number of samples from multiple lots and
should be viewed as a typical number.
Notes:
Figure 12: Thermal Measurement Point
(L/2)
Tc test point
(W/2)
W
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28

Electrical Specifications I DD Specifications and Conditions

Within the following IDD measurement tables, the following definitions and conditions
are used, unless stated otherwise:
LOW: V IN V IL(AC)max; HIGH: V IN V IH(AC)min.
Midlevel: Inputs are V REF = V DD/2.
RON set to RZQ/7 (34).
RTT,nom set to RZQ/6 (40).
RTT(WR) set to RZQ/2 (120).
QOFF is enabled in MR1.
ODT is enabled in MR1 (RTT,nom) and MR2 (RTT(WR)).
TDQS is disabled in MR1.
External DQ/DQS/DM load resistor is 25 to V DDQ/2.
Burst lengths are BL8 fixed.
AL equals 0 (except in IDD7).
IDD specifications are tested after the device is properly initialized.
Input slew rate is specified by AC parametric test conditions.
Optional ASR is disabled.
Read burst type uses nibble sequential (MR0[3] = 0).
Loop patterns must be executed at least once before current measurements begin.
Table 8: Timing Parameters Used for IDD Measurements Clock Units

DDR3L
-800
IDD
Parameter
tCK
DDR3L
-1066
DDR3L
-1333
-25E
-25
-187E
-187
-15E
5-5-5
6-6-6
7-7-7
8-8-8
9-9-9
(MIN) IDD
2.5
1.875
DDR3L
-1600
-15
-125E
-125
DDR3L
-1866
DDR3L
-2133
-107
-093
10-10-10 10-10-10 11-11-11 13-13-13 14-14-14 Unit

1.5
1.25
1.07
0.938
ns
CL IDD
10
10
11
13
14
CK
tRCD
10
10
11
13
14
CK
20
21
27
28
33
34
38
39
45
50
CK
15
15
20
20
24
24
28
28
32
36
CK
tRC
(MIN) IDD
tRAS
tRP
(MIN) IDD
(MIN) IDD
(MIN)
tFAW
tRRD
10
10
11
13
14
CK
x4, x8
16
16
20
20
20
20
24
24
26
27
CK
x16
20
20
27
27
30
30
32
32
33
38
CK
x4, x8
CK
IDD
x16
CK
tRFC
1Gb
44
44
59
59
74
74
88
88
103
118
CK
2Gb
64
64
86
86
107
107
128
128
150
172
CK
4Gb
104
104
139
139
174
174
208
208
243
279
CK
8Gb
140
140
187
187
234
234
280
280
328
375
CK
PDF: 09005aef85993e22
29

Cycle
Number
Command
CS#
RAS#
CAS#
WE#
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
Data
SubLoop
CKE
CK, CK#
Table 9: IDD0 Measurement Loop
ACT
D#
D#
Repeat cycles 1 through 4 until nRAS - 1; truncate if needed

nRAS
Static HIGH
Repeat cycles 1 through 4 until nRC - 1; truncate if needed
Toggling
PRE
nRC
ACT
nRC + 1
nRC + 2
nRC + 3
D#
D#
nRC + 4
Repeat cycles nRC + 1 through nRC + 4 until nRC - 1 + nRAS -1; truncate if needed
nRC + nRAS
PRE
Repeat cycles nRC + 1 through nRC + 4 until 2 RC - 1; truncate if needed

1
2 nRC
Repeat sub-loop 0, use BA[2:0] = 1
4 nRC
6 nRC
8 nRC
10 nRC
12 nRC
14 nRC
Notes:
PDF: 09005aef85993e22
1. DQ, DQS, DQS# are midlevel.

2. DM is LOW.
3. Only selected bank (single) active.
30

Cycle
Number
Command
CS#
RAS#
CAS#
WE#
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
Data2
Sub-Loop
CKE
CK, CK#
ACT
D#
D#
Repeat cycles 1 through 4 until nRCD - 1; truncate if needed

RD
nRCD
00000000
Repeat cycles 1 through 4 until nRAS - 1; truncate if needed

PRE
nRAS
Static HIGH
Toggling
Repeat cycles 1 through 4 until nRC - 1; truncate if needed

nRC
ACT
nRC + 1
nRC + 2
nRC + 3
D#
nRC + 4
D#
Repeat cycles nRC + 1 through nRC + 4 until nRC + nRCD - 1; truncate if needed
nRC + nRCD
RD
00110011
Repeat cycles nRC + 1 through nRC + 4 until nRC + nRAS - 1; truncate if needed
nRC + nRAS
PRE
Repeat cycle nRC + 1 through nRC + 4 until 2 nRC - 1; truncate if needed

1
2 nRC
4 nRC
6 nRC
8 nRC
10 nRC
12 nRC
14 nRC
Notes:
PDF: 09005aef85993e22
1.
2.
3.
4.
DQ, DQS, DQS# are midlevel unless driven as required by the RD command.
DM is LOW.
Burst sequence is driven on each DQ signal by the RD command.
Only selected bank (single) active.
31

Table 11: IDD Measurement Conditions for Power-Down Currents
Name
IDD2P0 Precharge
Power-Down
Current (Slow Exit)1
IDD2P1 Precharge
Power-Down
Current (Fast Exit)1
IDD2Q Precharge
Quiet
Standby Current
IDD3P Active
Power-Down
Current
N/A
N/A
N/A
N/A
Timing pattern
CKE
External clock
tCK
LOW
LOW
HIGH
LOW
Toggling
Toggling
Toggling
Toggling
tCK
tRC
(MIN) IDD
N/A
tCK
(MIN) IDD
N/A
tCK
(MIN) IDD
N/A
tCK
(MIN) IDD
N/A
tRAS
N/A
N/A
N/A
N/A
tRCD
N/A
N/A
N/A
N/A
tRRD
N/A
N/A
N/A
N/A
tRC
N/A
N/A
N/A
N/A
CL
N/A
N/A
N/A
N/A
AL
N/A
N/A
N/A
N/A
CS#
HIGH
HIGH
HIGH
HIGH
Command inputs
LOW
LOW
LOW
LOW
Row/column addr
LOW
LOW
LOW
LOW
Bank addresses
LOW
LOW
LOW
LOW
DM
LOW
LOW
LOW
LOW
Midlevel
Midlevel
Midlevel
Midlevel
Data I/O
Output buffer DQ, DQS
Enabled
Enabled
Enabled
Enabled
Enabled, off
Enabled, off
Enabled, off
Enabled, off
Burst length
Active banks
None
None
None
All
ODT2
Idle banks
All
All
All
None
Special notes
N/A
N/A
N/A
N/A
Notes:
PDF: 09005aef85993e22
1. MR0[12] defines DLL on/off behavior during precharge power-down only; DLL on (fast
exit, MR0[12] = 1) and DLL off (slow exit, MR0[12] = 0).
2. Enabled, off means the MR bits are enabled, but the signal is LOW.
32

Static HIGH
Toggling
Command
CS#
RAS#
CAS#
WE#
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
Data
Cycle
Number
Sub-Loop
CKE
CK, CK#
Table 12: IDD2N and IDD3N Measurement Loop
D#
D#
47
811
1215
1619
2023
2427
2831
Notes:

2. DM is LOW.
3. All banks closed during IDD2N; all banks open during IDD3N.
Static HIGH
Toggling
Command
CS#
RAS#
CAS#
WE#
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
Data
Cycle
Number
Sub-Loop
CKE
CK, CK#
Table 13: IDD2NT Measurement Loop
D#
D#
47
Repeat sub-loop 0, use BA[2:0] = 1; ODT = 0
811
1215
1619
2023
2427
2831
Notes:
PDF: 09005aef85993e22

2. DM is LOW.
3. All banks closed.
33

Command
CS#
RAS#
CAS#
WE#
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
Data3
Static HIGH
Toggling
Cycle
Number
Sub-Loop
CKE
CK, CK#
Table 14: IDD4R Measurement Loop
RD
00000000
D#
D#
RD
00110011
D#
D#
815
1623
2431
3239
4047
4855
5663
Notes:
PDF: 09005aef85993e22
1.
2.
3.
4.
DQ, DQS, DQS# are midlevel when not driving in burst sequence.
DM is LOW.
All banks open.
34

Command
CS#
RAS#
CAS#
WE#
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
Data4
Static HIGH
Toggling
Cycle
Number
Sub-Loop
CKE
CK, CK#
Table 15: IDD4W Measurement Loop
WR
00000000
D#
D#
WR
00110011
D#
D#
815
1623
2431
3239
4047
4855
5663
Notes:
PDF: 09005aef85993e22
1.
2.
3.
4.
DQ, DQS, DQS# are midlevel when not driving in burst sequence.
DM is LOW.
Burst sequence is driven on each DQ signal by the WR command.
All banks open.
35

Sub-Loop
Cycle
Number
Command
CS#
RAS#
CAS#
WE#
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
Data
CKE
CK, CK#
Table 16: IDD5B Measurement Loop
REF
D#
D#
Static HIGH
Toggling
1a
1b
58
Repeat sub-loop 1a, use BA[2:0] = 1
1c
912
1d
1316
1e
1720
1f
2124
1g
2528
1h
2932
33nRFC - 1
Repeat sub-loop 1a through 1h until nRFC - 1; truncate if needed
Notes:
PDF: 09005aef85993e22

2. DM is LOW.
36

Table 17: IDD Measurement Conditions for IDD6, IDD6ET, and IDD8
IDD Test
CKE
External clock
IDD6: Self Refresh Current

Normal Temperature Range
TC = 0C to +85C
IDD6ET: Self Refresh Current

Extended Temperature Range
TC = 0C to +95C
IDD8: Reset2
LOW
LOW
Midlevel
Off, CK and CK# = LOW
Off, CK and CK# = LOW
Midlevel
tCK
N/A
N/A
N/A
tRC
N/A
N/A
N/A
tRAS
N/A
N/A
N/A
tRCD
N/A
N/A
N/A
tRRD
N/A
N/A
N/A
tRC
N/A
N/A
N/A
CL
N/A
N/A
N/A
AL
N/A
N/A
N/A
CS#
Midlevel
Midlevel
Midlevel
Command inputs
Midlevel
Midlevel
Midlevel
Row/column addresses
Midlevel
Midlevel
Midlevel
Bank addresses
Midlevel
Midlevel
Midlevel
Data I/O
Midlevel
Midlevel
Midlevel
Output buffer DQ, DQS
Enabled
Enabled
Midlevel
Enabled, midlevel
Enabled, midlevel
Midlevel
Burst length
N/A
N/A
N/A
Active banks
N/A
N/A
None
Idle banks
N/A
N/A
All
SRT
Disabled (normal)
Enabled (extended)
N/A
ASR
Disabled
Disabled
N/A
ODT1
Notes:
PDF: 09005aef85993e22
1. Enabled, midlevel means the MR command is enabled, but the signal is midlevel.
2. During a cold boot RESET (initialization), current reading is valid after power is stable
and RESET has been LOW for 1ms; During a warm boot RESET (while operating), current
reading is valid after RESET has been LOW for 200ns + tRFC.
37

Command
CS#
RAS#
CAS#
WE#
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
Data3
Cycle
Number
Sub-Loop
CKE
CK, CK#
ACT
RDA
00000000
Static HIGH
nRRD
ACT
nRRD + 1
RDA
00110011
nRRD + 2
nRRD + 3
Repeat cycle nRRD + 2 until 2 nRRD - 1
2 nRRD
3 nRRD
4 nRRD
Toggling
Repeat cycle 2 until nRRD - 1
4 nRRD + 1
Repeat cycle 4 nRRD until nFAW - 1, if needed
nFAW
nFAW + nRRD
nFAW + 2 nRRD
nFAW + 3 nRRD
nFAW + 4 nRRD
nFAW + 4 nRRD + 1
10
Repeat cycle nFAW + 4 nRRD until 2 nFAW - 1, if needed
2 nFAW
ACT
2 nFAW + 1
RDA
00110011
2 nFAW + 2
2 nFAW + 3
11
Repeat cycle 2 nFAW + 2 until 2 nFAW + nRRD - 1
2 nFAW + nRRD
ACT
2 nFAW + nRRD + 1
RDA
00000000
2 nFAW + nRRD + 2
2 nFAW + nRRD + 3
Repeat cycle 2 nFAW + nRRD + 2 until 2 nFAW + 2 nRRD - 1
12
2 nFAW + 2 nRRD
13
2 nFAW + 3 nRRD
14
2 nFAW + 4 nRRD
2 nFAW + 4 nRRD + 1
Repeat cycle 2 nFAW + 4 nRRD until 3 nFAW - 1, if needed
3 nFAW
15
PDF: 09005aef85993e22
38

3 nFAW + 4 nRRD + 1
Notes:
PDF: 09005aef85993e22
1.
2.
3.
4.
Data3
A[6:3]
A[2:0]
19
3 nFAW + 4 nRRD
A[9:7]
3 nFAW + 3 nRRD
A[10]
18
A[15:11]
BA[2:0]
3 nFAW + 2 nRRD
ODT
17
WE#
CAS#
3 nFAW + nRRD
RAS#
16
CS#
Cycle
Number
Command
Sub-Loop
CKE
Static HIGH
Toggling
CK, CK#
Table 18: IDD7 Measurement Loop (Continued)

D
Repeat cycle 3 nFAW + 4 nRRD until 4 nFAW - 1, if needed
DQ, DQS, DQS# are midlevel unless driven as required by the RD command.
DM is LOW.
AL = CL-1.
39

Electrical Characteristics 1.35V Operating IDD Specifications

Table 19: IDD Maximum Limits Die Rev E
Speed Bin
Symbol
Width
DDR3L
-1066
Operating current 0: One bank

ACTIVATE-to-PRECHARGE
IDD0
x4, x8
44
47
55
62
mA
1, 2
x16
55
58
66
73
mA
1, 2

ACTIVATE-to-READ-to-PRECHARGE
IDD1
x4
53
57
61
65
mA
1, 2
x8
59
62
66
70
mA
1, 2
Parameter
DDR3L
-1333
DDR3L
-1600
DDR3L
-1866
Units
Notes
x16
80
84
87
91
mA
1, 2
Precharge power-down current:

Slow exit
IDD2P0
All
18
18
18
18
mA
1, 2
Precharge power-down current:

Fast exit
IDD2P1
All
26
28
32
37
mA
1, 2
Precharge quiet standby current
IDD2Q
All
27
28
32
35
mA
1, 2
Precharge standby current
IDD2N
All
28
29
32
35
mA
1, 2
Precharge standby ODT current
IDD2NT
x4, x8
32
35
39
42
mA
1, 2
x16
35
39
42
45
mA
1, 2
Active power-down current
IDD3P
All
32
35
38
41
mA
1, 2
Active standby current
IDD3N
x4, x8
32
35
38
41
mA
1, 2
x16
41
45
47
49
mA
1, 2
x4
113
130
147
164
mA
1, 2
x8
123
140
157
174
mA
1, 2
x16
185
202
235
252
mA
1, 2
x4
87
103
118
133
mA
1, 2
x8
95
110
125
141
mA
1, 2
x16
137
152
171
190
mA
1, 2
Burst read operating current
IDD4R
Burst write operating current
IDD4W
Burst refresh current
IDD5B
All
224
228
235
242
mA
1, 2
Room temperature self refresh
IDD6
All
20
20
20
20
mA
1, 2, 3
Extended temperature self refresh
IDD6ET
All
25
25
25
25
mA
2, 4
All banks interleaved read current
IDD7
x4, x8
160
190
220
251
mA
1, 2
Reset current
IDD8
Notes:
1.
2.
3.
4.
5.
x16
198
217
243
274
mA
1, 2
All
IDD2P +
2mA
IDD2P +
2mA
IDD2P +
2mA
IDD2P +
2mA
mA
1, 2
TC = 85C; SRT and ASR are disabled.

Enabling ASR could increase IDDx by up to an additional 2mA.
Restricted to TC (MAX) = 85C.
TC = 85C; ASR and ODT are disabled; SRT is enabled.
The IDD values must be derated (increased) on IT-option devices when operated outside
of the range 0C TC 85C:
5a. When TC < 0C: IDD2P0, IDD2P1 and IDD3P must be derated by 4%; IDD4R and IDD4W must
be derated by 2%; and IDD6, IDD6ET and IDD7 must be derated by 7%.
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40

5b. When TC > 85C: IDD0, IDD1, IDD2N, IDD2NT, IDD2Q, IDD3N, IDD3P, IDD4R, IDD4W, and IDD5B
must be derated by 2%; IDD2Px must be derated by 30%.
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41

Table 20: IDD Maximum Limits Die Rev N
Speed Bin
Parameter
DDR3L
-1066
DDR3L
-1333
DDR3L
-1600
DDR3L
-1866
DDR3L
-2133
x4, x8
42
45
47
49
51
mA
1, 2
x16
52
55
57
59
61
mA
1, 2
x4
50
53
56
59
62
mA
1, 2
x8
55
58
61
64
67
mA
1, 2
Symbol Width

ACTIVATE-to-PRECHARGE
IDD0

ACTIVATE-to-READ-to-PRECHARGE
IDD1
Units Notes
x16
75
78
81
84
87
mA
1, 2
Precharge power-down current: Slow exit
IDD2P0
All
mA
1, 2
Precharge power-down current: Fast exit
IDD2P1
All
10
12
14
16
18
mA
1, 2
Precharge quiet standby current
IDD2Q
All
20
22
24
26
28
mA
1, 2
Precharge standby current
IDD2N
All
20
22
24
26
28
mA
1, 2
Precharge standby ODT current
IDD2NT
x4, x8
24
26
28
30
32
mA
1, 2
x16
27
29
31
33
35
mA
1, 2
Active power-down current
IDD3P
All
22
24
26
28
30
mA
1, 2
Active standby current
IDD3N
x4, x8
26
28
30
32
34
mA
1, 2
x16
34
36
38
40
42
mA
1, 2
x4
65
75
85
95
105
mA
1, 2
x8
75
85
95
105
115
mA
1, 2
x16
135
145
155
165
175
mA
1, 2
x4
65
75
85
95
105
mA
1, 2
x8
75
85
95
105
115
mA
1, 2
x16
135
145
155
165
175
mA
1, 2
Burst read operating current
IDD4R
Burst write operating current
IDD4W
Burst refresh current
IDD5B
All
165
170
175
180
185
mA
1, 2
Room temperature self refresh
IDD6
All
12
12
12
12
12
mA
1, 2, 3
Extended temperature self refresh
IDD6ET
All
16
16
16
16
16
mA
2, 4
All banks interleaved read current
IDD7
x4, x8
110
120
130
140
150
mA
1, 2
Reset current
IDD8
Notes:
PDF: 09005aef85993e22
1.
2.
3.
4.
5.
x16
170
180
190
200
210
mA
1, 2
All
IDD2P +
2mA
IDD2P +
2mA
IDD2P +
2mA
IDD2P +
2mA
IDD2P +
2mA
mA
1, 2
TC = 85C; SRT and ASR are disabled.

Enabling ASR could increase IDDx by up to an additional 2mA.
Restricted to TC (MAX) = 85C.
TC = 85C; ASR and ODT are disabled; SRT is enabled.
The IDD values must be derated (increased) on IT-option devices when operated outside
of the range 0C TC 85C:
42

5a. When TC < 0C: IDD2P0, IDD2P1 and IDD3P must be derated by 4%; IDD4R and IDD4W must
be derated by 2%; and IDD6, IDD6ET and IDD7 must be derated by 7%.
5b. When TC > 85C: IDD0, IDD1, IDD2N, IDD2NT, IDD2Q, IDD3N, IDD3P, IDD4R, IDD4W, and IDD5B
must be derated by 2%; IDD2Px must be derated by 30%.
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43

Electrical Specifications DC and AC

DC Operating Conditions
Table 21: DDR3L 1.35V DC Electrical Characteristics and Operating Conditions
All voltages are referenced to VSS
Parameter/Condition
Symbol
Min
Nom
Max
Unit
Notes
Supply voltage
VDD
1.283
1.35
1.45
17
I/O supply voltage
VDDQ
1.283
1.35
1.45
17
II
IVREF
Input leakage current

Any input 0V VIN VDD, VREF pin 0V VIN 1.1V
(All other pins not under test = 0V)
VREF supply leakage current
VREFDQ = VDD/2 or VREFCA = VDD/2
(All other pins not under test = 0V)
Notes:
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8, 9
1. VDD and VDDQ must track one another. VDDQ must be VDD. VSS = VSSQ.
2. VDD and VDDQ may include AC noise of 50mV (250 kHz to 20 MHz) in addition to the
DC (0 Hz to 250 kHz) specifications. VDD and VDDQ must be at same level for valid AC
timing parameters.
3. Maximum DC value may not be greater than 1.425V. The DC value is the linear average
of VDD/VDDQ(t) over a very long period of time (for example, 1 second).
4. Under these supply voltages, the device operates to this DDR3L specification.
5. If the maximum limit is exceeded, input levels shall be governed by DDR3 specifications.
6. Under 1.5V operation, this DDR3L device operates in accordance with the DDR3 specifications under the same speed timings as defined for this device.
7. Once initialized for DDR3L operation, DDR3 operation may only be used if the device is
in reset while VDD and VDDQ are changed for DDR3 operation (see VDD Voltage Switching (page 134)).
8. The minimum limit requirement is for testing purposes. The leakage current on the VREF
pin should be minimal.
9. VREF (see Table 22).
44

Input Operating Conditions
Table 22: DDR3L 1.35V DC Electrical Characteristics and Input Conditions
Parameter/Condition
Symbol
Min
Nom
Max
Unit
VIN low; DC/commands/address busses
VIL
VSS
N/A
See Table 23
VIN high; DC/commands/address busses
VIH
See Table 23
N/A
VDD
Notes
Input reference voltage command/address bus
VREFCA(DC)
0.49 VDD
0.5 VDD
0.51 VDD
1, 2
I/O reference voltage DQ bus
VREFDQ(DC)
0.49 VDD
0.5 VDD
0.51 VDD
2, 3
I/O reference voltage DQ bus in SELF REFRESH
VREFDQ(SR)
VSS
0.5 VDD
VDD
VTT
0.5 VDDQ
Command/address termination voltage

(system level, not direct DRAM input)
Notes:
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1. VREFCA(DC) is expected to be approximately 0.5 VDD and to track variations in the DC

level. Externally generated peak noise (non-common mode) on VREFCA may not exceed
1% VDD around the VREFCA(DC) value. Peak-to-peak AC noise on VREFCA should not exceed 2% of VREFCA(DC).
2. DC values are determined to be less than 20 MHz in frequency. DRAM must meet specifications if the DRAM induces additional AC noise greater than 20 MHz in frequency.
3. VREFDQ(DC) is expected to be approximately 0.5 VDD and to track variations in the DC
level. Externally generated peak noise (non-common mode) on VREFDQ may not exceed
1% VDD around the VREFDQ(DC) value. Peak-to-peak AC noise on VREFDQ should not exceed 2% of VREFDQ(DC).
4. VREFDQ(DC) may transition to VREFDQ(SR) and back to VREFDQ(DC) when in SELF REFRESH,
within restrictions outlined in the SELF REFRESH section.
5. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors. Minimum and maximum values are system-dependent.
45

Table 23: DDR3L 1.35V Input Switching Conditions Command and Address
Parameter/Condition
Symbol
DDR3L-800/1066
DDR3L-1333/1600
DDR3L-1866/2133
Units
Command and Address

5
160
160
mV
VIH(AC135),min5
135
135
135
mV
VIH(AC125),min
125
mV
VIH(DC90),min
90
90
90
mV
Input low DC voltage: Logic 0
VIL(DC90),min
90
90
90
mV
Input low AC voltage: Logic 0
VIL(AC125),min5
125
mV
VIL(AC135),min5
135
135
135
mV
VIL(AC160),min5
160
160
mV
Input high AC voltage: Logic 1
VIH(AC160),min
Input high DC voltage: Logic 1
DQ and DM
Input high AC voltage: Logic 1
VIH(AC160),min5
160
160
mV
135
135
135
mV
130
mV
VIH(AC135),min
VIH(AC125),min
Input high DC voltage: Logic 1
VIH(DC90),min
90
90
90
mV
Input low DC voltage: Logic 0
VIL(DC90),min
90
90
90
mV
Input low AC voltage: Logic 0
VIL(AC125),min5
130
mV
135
135
135
mV
160
160
mV
VIL(AC135),min
VIL(AC160),min
Notes:
1. All voltages are referenced to VREF. VREF is VREFCA for control, command, and address. All
slew rates and setup/hold times are specified at the DRAM ball. VREF is VREFDQ for DQ
and DM inputs.
2. Input setup timing parameters (tIS and tDS) are referenced at VIL(AC)/VIH(AC), not VREF(DC).
3. Input hold timing parameters (tIH and tDH) are referenced at VIL(DC)/VIH(DC), not VREF(DC).
4. Single-ended input slew rate = 1 V/ns; maximum input voltage swing under test is
900mV (peak-to-peak).
5. When two VIH(AC) values (and two corresponding VIL(AC) values) are listed for a specific
speed bin, the user may choose either value for the input AC level. Whichever value is
used, the associated setup time for that AC level must also be used. Additionally, one
VIH(AC) value may be used for address/command inputs and the other VIH(AC) value may
be used for data inputs.
For example, for DDR3-800, two input AC levels are defined: VIH(AC160),min and
VIH(AC135),min (corresponding VIL(AC160),min and VIL(AC135),min). For DDR3-800, the address/
command inputs must use either VIH(AC160),min with tIS(AC160) of 210ps or VIH(AC150),min
with tIS(AC135) of 365ps; independently, the data inputs must use either VIH(AC160),min
with tDS(AC160) of 75ps or VIH(AC150),min with tDS(AC150) of 125ps.
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46

Table 24: DDR3L 1.35V Differential Input Operating Conditions (CK, CK# and DQS, DQS#)
Parameter/Condition
Symbol
Min
Max
Units
Notes
Differential input logic high slew
VIH,diff(AC)slew
180
N/A
mV
Differential input logic low slew
VIL,diff(AC)slew
N/A
180
mV
Differential input logic high
VIH,diff(AC)
2 (VIH(AC) - VREF)
VDD/VDDQ
mV
Differential input logic low
VIL,diff(AC)
VSS/VSSQ
2 (VIL(AC) - VREF)
mV
VIX
VREF(DC) - 150
VREF(DC) + 150
mV
5, 7, 9
VIX (175)
VREF(DC) - 175
VREF(DC) + 175
mV
5, 79
VDDQ/2 + 160
VDDQ
mV
VDD/2 + 160
VDD
mV
VSSQ
VDDQ/2 - 160
mV
VSS
VDD/2 - 160
mV
Differential input crossing voltage

relative to VDD/2 for DQS, DQS#; CK,
CK#
Differential input crossing voltage
relative to VDD/2 for CK, CK#
Single-ended high level for strobes
Single-ended high level for CK, CK#
Single-ended low level for strobes
Single-ended low level for CK, CK#
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
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VSEH
VSEL
Clock is referenced to VDD and VSS. Data strobe is referenced to VDDQ and VSSQ.
Reference is VREFCA(DC) for clock and VREFDQ(DC) for strobe.
Differential input slew rate = 2 V/ns.
Defines slew rate reference points, relative to input crossing voltages.
Minimum DC limit is relative to single-ended signals; overshoot specifications are applicable.
Maximum DC limit is relative to single-ended signals; undershoot specifications are applicable.
The typical value of VIX(AC) is expected to be about 0.5 VDD of the transmitting device,
and VIX(AC) is expected to track variations in VDD. VIX(AC) indicates the voltage at which
differential input signals must cross.
The VIX extended range (175mV) is allowed only for the clock; this VIX extended range
is only allowed when the following conditions are met: The single-ended input signals
are monotonic, have the single-ended swing VSEL, VSEH of at least VDD/2 250mV, and
the differential slew rate of CK, CK# is greater than 3 V/ns.
VIX must provide 25mV (single-ended) of the voltages separation.
47

Figure 13: DDR3L 1.35V Input Signal
VDD + 0.4V
Narrow pulse width
Minimum VIL and VIH levels
VIH MIN(AC)
VIH MIN(DC)
VIH(AC)
VIH(DC)
VIL MIN(AC)
VDD
VIL(DC)
VIL(AC)
VREF + 125/135/160mV
VIH(AC)
VREF + 90mV
VIH(DC)
VREFDQ + AC noise
VREFDQ + DC error
VREFDQ - DC error
VREFDQ - AC noise
VREF - 90mV
VIL(DC)
VREF - 125/135/160mV
VIL(AC)
0.0V
VSS
VSS - 0.40V
Undershoot
VSS - 0.40V
Narrow pulse width
Note:
PDF: 09005aef85993e22
VDDQ + 0.4V
Overshoot
VDDQ
VREF DC MAX + 1%
.51 x VDD
VREF = VDD/2
.49 x VDD
VREF DC MIN - 1% VDD
MAX 2% Total
VREF DC MAX
VREF
DC MIN
MAX 2% Total
VIL MIN(DC)
VIL and VIH levels with ringback
1. Numbers in diagrams reflect nominal values.
48

DDR3L 1.35V AC Overshoot/Undershoot Specification
Table 25: DDR3L Control and Address Pins
Parameter
DDR3L-800
DRR3L-1066
DDR3L-1333
DDR3L-1600
DDR3L-1866
DDR3L-2133
Maximum peak amplitude allowed for overshoot area

(see Figure 14)
0.4V
0.4V
0.4V
0.4V
0.4V
0.4V
Maximum peak amplitude allowed for undershoot area

(see Figure 15)
0.4V
0.4V
0.4V
0.4V
0.4V
0.4V
Maximum overshoot area

above VDD (see Figure 14)
0.67 V/ns
0.5 V/ns
0.4 V/ns
0.33 V/ns
0.28 V/ns
0.25 V/ns
Maximum undershoot
area below VSS (see Figure 15)
0.67 V/ns
0.5 V/ns
0.4 V/ns
0.33 V/ns
0.28 V/ns
0.25 V/ns
Table 26: DDR3L 1.35V Clock, Data, Strobe, and Mask Pins
Parameter
DDR3L-800
DDR3L-1066
DDR3L-1333
DDR3L-1600
DDR3L-1866
DDR3L-2133
Maximum peak amplitude allowed for overshoot area

(see Figure 14)
0.4V
0.4V
0.4V
0.4V
0.4V
0.4V
Maximum peak amplitude allowed for undershoot area

(see Figure 15)
0.4V
0.4V
0.4V
0.4V
0.4V
0.4V
Maximum overshoot area

above VDD/VDDQ (see Figure 14)
0.25 V/ns
0.19 V/ns
0.15 V/ns
0.13 V/ns
0.11 V/ns
0.10 V/ns
Maximum undershoot
area below VSS/VSSQ (see
Figure 15)
0.25 V/ns
0.19 V/ns
0.15 V/ns
0.13 V/ns
0.11 V/ns
0.10 V/ns
Figure 14: Overshoot

Maximum amplitude
Volts (V)
Overshoot area
VDD/VDDQ
Time (ns)
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49

Figure 15: Undershoot
VSS/VSSQ
Volts (V)
Undershoot area
Maximum amplitude
Time (ns)
Figure 16: VIX for Differential Signals

VDD, VDDQ
VDD, VDDQ
CK#, DQS#
CK#, DQS#
VIX
VIX
VDD/2, VDDQ/2
VDD/2, VDDQ/2
VIX
VIX
CK, DQS
CK, DQS
VSS, VSSQ
VSS, VSSQ
Figure 17: Single-Ended Requirements for Differential Signals

VDD or VDDQ
VSEH,min
VDD/2 or VDDQ/2
VSEH
CK or DQS
VSEL,max
VSEL
VSS or VSSQ
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50

Figure 18: Definition of Differential AC-Swing and tDVAC
tDVAC
VIH,diff(AC)min
VIH,diff,min
CK - CK#
DQS - DQS#
0.0
VIL,diff,max
VIL,diff(AC)max
tDVAC
Half cycle
Table 27: DDR3L 1.35V Minimum Required Time tDVAC for CK/CK#, DQS/DQS# Differential for AC
Ringback
DDR3L-800/1066/1333/1600
tDVAC
tDVAC
DDR3L-1866/2133
tDVAC
tDVAC
tDVAC
Slew Rate (V/ns)
at
320mV (ps)
at
270mV (ps)
at
270mV (ps)
at
250mV (ps)
at
260mV (ps)
>4.0
189
201
163
168
176
4.0
189
201
163
168
176
3.0
162
179
140
147
154
2.0
109
134
95
105
111
1.8
91
119
80
91
97
1.6
69
100
62
74
78
1.4
40
76
37
52
55
1.2
Note 1
44
22
24
1.0
Note 1
<1.0
Note 1
Note:
PDF: 09005aef85993e22
1. Rising input signal shall become equal to or greater than VIH(AC) level and Falling input
signal shall become equal to or less than VIL(AC) level.
51

DDR3L 1.35V Slew Rate Definitions for Single-Ended Input Signals
Setup (tIS and tDS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of V REF and the first crossing of V IH(AC)min. Setup (tIS and tDS)
nominal slew rate for a falling signal is defined as the slew rate between the last crossing
of V REF and the first crossing of V IL(AC)max.
Hold (tIH and tDH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of V IL(DC)max and the first crossing of V REF. Hold (tIH and tDH)
nominal slew rate for a falling signal is defined as the slew rate between the last crossing
of V IH(DC)min and the first crossing of V REF (see Figure 19 (page 53)).
Table 28: Single-Ended Input Slew Rate Definition
Input Slew Rates
(Linear Signals)
Input
Measured
Edge
From
To
Rising
VREF
VIH(AC),min
Falling
VREF
VIL(AC),max
Rising
VIL(DC),max
VREF
Falling
VIH(DC),min
VREF
Setup
Hold
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52
Calculation
VIH(AC),min - VREF
TRSse
VREF - VIL(AC),max
TFSse
VREF - VIL(DC),max
TFHse
VIH(DC),min - VREF
TRSHse

Figure 19: Nominal Slew Rate Definition for Single-Ended Input Signals
TRSse
Setup
Single-ended input voltage (DQ, CMD, ADDR)
VIH(AC)min
VIH(DC)min
VREFDQ or
VREFCA
VIL(DC)max
VIL(AC)max
TFSse
TRHse
Hold
Single-ended input voltage (DQ, CMD, ADDR)
VIH(AC)min
VIH(DC)min
VREFDQ or
VREFCA
VIL(DC)max
VIL(AC)max
TFHse
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53

DDR3L 1.35V Slew Rate Definitions for Differential Input Signals
Input slew rate for differential signals (CK, CK# and DQS, DQS#) are defined and measured, as shown in Table 29 and Figure 20. The nominal slew rate for a rising signal is
defined as the slew rate between V IL,diff,max and V IH,diff,min. The nominal slew rate for a
falling signal is defined as the slew rate between V IH,diff,min and V IL,diff,max.
Table 29: DDR3L 1.35V Differential Input Slew Rate Definition
Differential Input
Slew Rates
(Linear Signals)
Input
CK and
DQS
reference
Measured
Edge
From
To
Calculation
Rising
VIL,diff,max
VIH,diff,min
Falling
VIH,diff,min
VIL,diff,max
VIH,diff,min - VIL,diff,max
TRdiff
VIH,diff,min - VIL,diff,max
TFdiff
Figure 20: DDR3L 1.35V Nominal Differential Input Slew Rate Definition for DQS, DQS# and CK, CK#
Differential input voltage (DQS, DQS#; CK, CK#)
TRdiff
VIH,diff,min
VIL,diff,max
TFdiff
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54

ODT Characteristics
ODT Characteristics
The ODT effective resistance RTT is defined by MR1[9, 6, and 2]. ODT is applied to the
DQ, DM, DQS, DQS#, and TDQS, TDQS# balls (x8 devices only). The ODT target values
and a functional representation are listed in Table 30 and Table 31 (page 56). The individual pull-up and pull-down resistors (RTT(PU) and RTT(PD)) are defined as follows:
RTT(PU) = (VDDQ - VOUT)/|IOUT|, under the condition that RTT(PD) is turned off
RTT(PD) = (VOUT)/|IOUT|, under the condition that RTT(PU) is turned off
Figure 21: ODT Levels and I-V Characteristics
Chip in termination mode
ODT
VDDQ
IPU
IOUT = IPD - IPU
RTT(PU)
To
other
circuitry
such as
RCV, . . .
IOUT
RTT(PD)
DQ
VOUT
IPD
VSSQ
Table 30: On-Die Termination DC Electrical Characteristics

Parameter/Condition
Symbol
RTT effective impedance
RTT(EFF)
VM
Deviation of VM with respect to

VDDQ/2
Notes:
Min
Nom
Max
Unit
See Table 31 (page 56)

5
Notes
1, 2
1, 2, 3
1. Tolerance limits are applicable after proper ZQ calibration has been performed at a
stable temperature and voltage (VDDQ = VDD, VSSQ = VSS). Refer to ODT Sensitivity (page
57) if either the temperature or voltage changes after calibration.
2. Measurement definition for RTT: Apply VIH(AC) to pin under test and measure current
I[VIH(AC)], then apply VIL(AC) to pin under test and measure current I[VIL(AC)]:
VIH(AC) - VIL(AC)
RTT =
I(VIH(AC)) - I(VIL(AC))
3. Measure voltage (VM) at the tested pin with no load:
VM =
2 VM
1 100
VDDQ
4. For IT and AT devices, the minimum values are derated by 6% when the device operates
between 40C and 0C (TC).
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ODT Characteristics
1.35V ODT Resistors
Table 31 provides an overview of the ODT DC electrical characteristics. The values provided are not specification requirements; however, they can be used as design guidelines to indicate what RTT is targeted to provide:
RTT 120 is made up of RTT120(PD240) and RTT120(PU240)

Table 31: 1.35V RTT Effective Impedance

MR1
[9, 6, 2]
RTT
Resistor
VOUT
Min
Nom
Max
Units
0, 1, 0
120
RTT,120PD240
0.2 VDDQ
0.6
1.0
1.15
RZQ/1
0.5 VDDQ
0.9
1.0
1.15
RZQ/1
0.8 VDDQ
0.9
1.0
1.45
RZQ/1
RTT,120PU240
120
0, 0, 1
60
RTT,60PD120
RTT,60PU120
60
0, 1, 1
40
RTT,40PD80
RTT,40PU80
40
1, 0, 1
30
RTT,30PD60
RTT,30PU60
30
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0.2 VDDQ
0.9
1.0
1.45
RZQ/1
0.5 VDDQ
0.9
1.0
1.15
RZQ/1
0.8 VDDQ
0.6
1.0
1.15
RZQ/1
VIL(AC) to VIH(AC)
0.9
1.0
1.65
RZQ/2
0.2 VDDQ
0.6
1.0
1.15
RZQ/2
0.5 VDDQ
0.9
1.0
1.15
RZQ/2
0.8 VDDQ
0.9
1.0
1.45
RZQ/2
0.2 VDDQ
0.9
1.0
1.45
RZQ/2
0.5 VDDQ
0.9
1.0
1.15
RZQ/2
0.8 VDDQ
0.6
1.0
1.15
RZQ/2
VIL(AC) to VIH(AC)
0.9
1.0
1.65
RZQ/4
0.2 VDDQ
0.6
1.0
1.15
RZQ/3
0.5 VDDQ
0.9
1.0
1.15
RZQ/3
0.8 VDDQ
0.9
1.0
1.45
RZQ/3
0.2 VDDQ
0.9
1.0
1.45
RZQ/3
0.5 VDDQ
0.9
1.0
1.15
RZQ/3
0.8 VDDQ
0.6
1.0
1.15
RZQ/3
VIL(AC) to VIH(AC)
0.9
1.0
1.65
RZQ/6
0.2 VDDQ
0.6
1.0
1.15
RZQ/4
0.5 VDDQ
0.9
1.0
1.15
RZQ/4
0.8 VDDQ
0.9
1.0
1.45
RZQ/4
0.2 VDDQ
0.9
1.0
1.45
RZQ/4
0.5 VDDQ
0.9
1.0
1.15
RZQ/4
0.8 VDDQ
0.6
1.0
1.15
RZQ/4
VIL(AC) to VIH(AC)
0.9
1.0
1.65
RZQ/8
56

ODT Characteristics
Table 31: 1.35V RTT Effective Impedance (Continued)
MR1
[9, 6, 2]
RTT
Resistor
VOUT
Min
Nom
Max
Units
1, 0, 0
20
RTT,20PD40
0.2 VDDQ
0.6
1.0
1.15
RZQ/6
0.5 VDDQ
0.9
1.0
1.15
RZQ/6
0.8 VDDQ
0.9
1.0
1.45
RZQ/6
RTT,20PU40
20
0.2 VDDQ
0.9
1.0
1.45
RZQ/6
0.5 VDDQ
0.9
1.0
1.15
RZQ/6
0.8 VDDQ
0.6
1.0
1.15
RZQ/6
VIL(AC) to VIH(AC)
0.9
1.0
1.65
RZQ/12
ODT Sensitivity
If either the temperature or voltage changes after I/O calibration, then the tolerance
limits listed in Table 30 and Table 31 can be expected to widen according to Table 32
and Table 33.
Table 32: ODT Sensitivity Definition
Symbol
Min
Max
Unit
RTT
0.9 - dRTTdT |DT| - dRTTdV |DV|
1.6 + dRTTdT |DT| + dRTTdV |DV|
RZQ/(2, 4, 6, 8, 12)
Note:
1. T = T - T(@ calibration), V = VDDQ - VDDQ(@ calibration) and VDD = VDDQ.
Table 33: ODT Temperature and Voltage Sensitivity
Note:
Change
Min
Max
Unit
dRTTdT
1.5
%/C
dRTTdV
0.15
%/mV
1. T = T - T(@ calibration), V = VDDQ - VDDQ(@ calibration) and VDD = VDDQ.
ODT Timing Definitions

ODT loading differs from that used in AC timing measurements. The reference load for
ODT timings is shown in Figure 22. Two parameters define when ODT turns on or off
synchronously, two define when ODT turns on or off asynchronously, and another defines when ODT turns on or off dynamically. Table 34 and Table 35 (page 58) outline
and provide definition and measurement references settings for each parameter.
ODT turn-on time begins when the output leaves High-Z and ODT resistance begins to
turn on. ODT turn-off time begins when the output leaves Low-Z and ODT resistance
begins to turn off.
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ODT Characteristics
Figure 22: ODT Timing Reference Load
DUT
CK, CK#
VREF
VDDQ/2
RTT = 25
DQ, DM
DQS, DQS#
TDQS, TDQS#
ZQ
VTT = VSSQ
Timing reference point
RZQ = 240
VSSQ
Table 34: ODT Timing Definitions

Symbol
Begin Point Definition
End Point Definition
Figure
tAON
Rising edge of CK CK# defined by the end

point of ODTLon
Extrapolated point at VSSQ
Figure 23 (page 59)
tAOF
Rising edge of CK CK# defined by the end

point of ODTLoff
Extrapolated point at VRTT,nom
Figure 23 (page 59)
tAONPD
Rising edge of CK CK# with ODT first being Extrapolated point at VSSQ
registered HIGH
Figure 24 (page 59)
tAOFPD
Rising edge of CK CK# with ODT first being Extrapolated point at VRTT,nom
registered LOW
Figure 24 (page 59)
Rising edge of CK CK# defined by the end Extrapolated points at VRTT(WR) and
point of ODTLcnw, ODTLcwn4, or ODTLcwn8 VRTT,nom
Figure 25 (page 60)
tADC
Table 35: DDR3L(1.35V) Reference Settings for ODT Timing Measurements

Measured
Parameter
RTT,nom Setting
RTT(WR) Setting
VSW1
VSW2
tAON
RZQ/4 (60)
N/A
50mV
100mV
RZQ/12 (20)
N/A
100mV
200mV
RZQ/4 (60)
N/A
50mV
100mV
RZQ/12 (20)
N/A
100mV
200mV
RZQ/4 (60)
N/A
50mV
100mV
tAOF
tAONPD
RZQ/12 (20)
N/A
100mV
200mV
tAOFPD
RZQ/4 (60)
N/A
50mV
100mV
RZQ/12 (20)
N/A
100mV
200mV
tADC
RZQ/12 (20)
RZQ/2 (20)
200mV
250mV
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ODT Characteristics
Figure 23: tAON and tAOF Definitions
tAON
tAOF
Begin point: Rising edge of CK - CK#
defined by the end point of ODTLoff

defined by the end point of ODTLon
CK
CK
VDDQ/2
CK#
CK#
tAON
tAOF
End point: Extrapolated point at VRTT,nom
TSW2
TSW1
TSW1
DQ, DM
DQS, DQS#
TDQS, TDQS#
VSW2
TSW1
VSW2
VSW1
VSW1
VSSQ
VRTT,nom
VSSQ
End point: Extrapolated point at VSSQ
Figure 24: tAONPD and tAOFPD Definitions

tAONPD
with ODT first registered high
tAOFPD
with ODT first registered low
CK
CK
VDDQ/2
CK#
CK#
tAONPD
tAOFPD
End point: Extrapolated point at VRTT,nom
TSW2
TSW2
TSW1
DQ, DM
DQS, DQS#
TDQS, TDQS#
VSW2
VSSQ
VRTT,nom
TSW1
VSW2
VSW1
VSW1
VSSQ
End point: Extrapolated point at VSSQ
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ODT Characteristics
Figure 25: tADC Definition
defined by the end point of ODTLcnw
Begin point: Rising edge of CK - CK# defined by

the end point of ODTLcwn4 or ODTLcwn8
CK
VDDQ/2
CK#
tADC
tADC
VRTT,nom
DQ, DM
DQS, DQS#
TDQS, TDQS#
End point:
Extrapolated
point at VRTT,nom
VRTT,nom
TSW21
TSW11
VSW2
VSW1
TSW22
TSW12
VRTT(WR)
End point: Extrapolated point at VRTT(WR)

VSSQ
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60

Output Driver Impedance

The output driver impedance is selected by MR1[5,1] during initialization. The selected
value is able to maintain the tight tolerances specified if proper ZQ calibration is performed. Output specifications refer to the default output driver unless specifically stated otherwise. A functional representation of the output buffer is shown below. The output driver impedance RON is defined by the value of the external reference resistor RZQ
as follows:
RON,x = RZQ/y (with RZQ = 240 1%; x = 34 or 40 with y = 7 or 6, respectively)
The individual pull-up and pull-down resistors RON(PU) and RON(PD) are defined as follows:
RON(PU) = (VDDQ - VOUT)/|IOUT|, when RON(PD) is turned off
RON(PD) = (VOUT)/|IOUT|, when RON(PU) is turned off
Figure 26: Output Driver
Chip in drive mode
Output driver
VDDQ
IPU
To
other
circuitry
such as
RCV, . . .
RON(PU)
DQ
IOUT
RON(PD)
VOUT
IPD
VSSQ
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34 Ohm Output Driver Impedance
The 34 driver (MR1[5, 1] = 01) is the default driver. Unless otherwise stated, all timings
and specifications listed herein apply to the 34 driver only. Its impedance RON is defined by the value of the external reference resistor RZQ as follows: RON34 = RZQ/7 (with
nominal RZQ = 240 1%) and is actually 34.3 1%.
Table 36: DDR3L 34 Ohm Driver Impedance Characteristics
MR1
[5, 1]
RON
Resistor
VOUT
Min
Nom
Max
Units
0, 1
34.3
RON,34PD
0.2 VDDQ
0.6
1.0
1.15
RZQ/7
RON,34PU
Pull-up/pull-down mismatch (MMPUPD)

Notes:
0.5 VDDQ
0.9
1.0
1.15
RZQ/7
0.8 VDDQ
0.9
1.0
1.45
RZQ/7
0.2 VDDQ
0.9
1.0
1.45
RZQ/7
0.5 VDDQ
0.9
1.0
1.15
RZQ/7
0.8 VDDQ
0.6
1.0
1.15
RZQ/7
VIL(AC) to VIH(AC)
10
N/A
10
1. Tolerance limits assume RZQ of 240 1% and are applicable after proper ZQ calibration has been performed at a stable temperature and voltage: VDDQ = VDD; VSSQ = VSS).
Refer to DDR3L 34 Ohm Output Driver Sensitivity (page 64) if either the temperature
or the voltage changes after calibration.
2. Measurement definition for mismatch between pull-up and pull-down (MMPUPD). Measure both RON(PU) and RON(PD) at 0.5 VDDQ:
RON(PU) - RON(PD)
MMPUPD =
100
RON,nom
3. For IT and AT (1Gb only) devices, the minimum values are derated by 6% when the device operates between 40C and 0C (TC).
A larger maximum limit will result in slightly lower minimum currents.
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DDR3L 34 Ohm Driver
Using Table 37, the 34 drivers current range has been calculated and summarized in
Table 38 (page 63) VDD = 1.35V, Table 39 for V DD = 1.45V, and Table 40 (page 64) for
VDD = 1.283V. The individual pull-up and pull-down resistors R ON34(PD) and RON34(PU)
are defined as follows:
RON34(PD) = (VOUT)/|IOUT|; RON34(PU) is turned off
RON34(PU) = (VDDQ - VOUT)/|IOUT|; RON34(PD) is turned off
Table 37: DDR3L 34 Ohm Driver Pull-Up and Pull-Down Impedance Calculations
RON
Min
Nom
Max
Unit
RZQ = 240 1%
237.6
240
242.4
33.9
34.3
34.6
MR1[5,1]
RON
Resistor
VOUT
Min
Nom
Max
Unit
0, 1
34.3
RON34(PD)
0.2 VDDQ
20.4
34.3
38.1
0.5 VDDQ
30.5
34.3
38.1
0.8 VDDQ
30.5
34.3
48.5
0.2 VDDQ
30.5
34.3
48.5
0.5 VDDQ
30.5
34.3
38.1
0.8 VDDQ
20.4
34.3
38.1
RZQ/7 = (240 1%)/7
RON34(PU)
Table 38: DDR3L 34 Ohm Driver IOH/IOL Characteristics: VDD = VDDQ = [email protected]
MR1[5,1]
RON
Resistor
VOUT
Max
Nom
Min
Unit
0, 1
34.3
RON34(PD)
IOL @ 0.2 VDDQ
13.3
7.9
7.1
mA
IOL @ 0.5 VDDQ
22.1
19.7
17.7
mA
IOL @ 0.8 VDDQ
35.4
31.5
22.3
mA
RON34(PU)
IOH @ 0.2 VDDQ
35.4
31.5
22.3
mA
IOH @ 0.5 VDDQ
22.1
19.7
17.7
mA
IOH @ 0.8 VDDQ
13.3
7.9
7.1
mA
Min
Unit
MR1[5,1]
RON
Resistor
VOUT
Max
0, 1
34.3
RON34(PD)
IOL @ 0.2 VDDQ
14.2
8.5
7.6
mA
IOL @ 0.5 VDDQ
23.7
21.1
19.0
mA
IOL @ 0.8 VDDQ
38.0
33.8
23.9
mA
IOH @ 0.2 VDDQ
38.0
33.8
23.9
mA
IOH @ 0.5 VDDQ
23.7
21.1
19.0
mA
IOH @ 0.8 VDDQ
14.2
8.5
7.6
mA
RON34(PU)
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Nom

MR1[5,1]
RON
Resistor
VOUT
Max
Nom
Min
Unit
0, 1
34.3
RON34(PD)
IOL @ 0.2 VDDQ
12.6
7.5
6.7
mA
IOL @ 0.5 VDDQ
21.0
18.7
16.8
mA
IOL @ 0.8 VDDQ
33.6
29.9
21.2
mA
RON34(PU)
IOH @ 0.2 VDDQ
33.6
29.9
21.2
mA
IOH @ 0.5 VDDQ
21.0
18.7
16.8
mA
IOH @ 0.8 VDDQ
12.6
7.5
6.7
mA
DDR3L 34 Ohm Output Driver Sensitivity

If either the temperature or the voltage changes after ZQ calibration, then the tolerance
limits listed in Table 36 (page 62) can be expected to widen according to Table 41 and
Table 42.
Table 41: DDR3L 34 Ohm Output Driver Sensitivity Definition
Symbol
Min
Max
Unit
RON(PD) @ 0.2 VDDQ
0.6 - dRONdTL |T| - dRONdVL |V|
1.1 + dRONdTL |T| + dRONdVL |V|
RZQ/7
RON(PD) @ 0.5 VDDQ
0.9 - dRONdTM |T| - dRONdVM |V|
1.1 + dRONdTM |T| + dRONdVM |V|
RZQ/7
RON(PD) @ 0.8 VDDQ
0.9 - dRONdTH |T| - dRONdVH |V|
1.4 + dRONdTH |T| + dRONdVH |V|
RZQ/7
RON(PU) @ 0.2 VDDQ
RZQ/7
RON(PU) @ 0.5 VDDQ
RZQ/7
RON(PU) @ 0.8 VDDQ
RZQ/7
Note:
1. T = T - T(@CALIBRATION); V = VDDQ - VDDQ(@CALIBRATION); and VDD = VDDQ.
Table 42: DDR3L 34 Ohm Output Driver Voltage and Temperature Sensitivity
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Change
Min
Max
Unit
dRONdTM
1.5
%/C
dRONdVM
0.13
%/mV
dRONdTL
1.5
%/C
dRONdVL
0.13
%/mV
dRONdTH
1.5
%/C
dRONdVH
0.13
%/mV
64

DDR3L Alternative 40 Ohm Driver
Table 43: DDR3L 40 Ohm Driver Impedance Characteristics
MR1
[5, 1]
RON
Resistor
VOUT
Min
Nom
Max
Units
0, 0
40
RON,40PD
0.2 VDDQ
0.6
1.0
1.15
RZQ/6
0.5 VDDQ
0.9
1.0
1.15
RZQ/6
0.8 VDDQ
0.9
1.0
1.45
RZQ/6
RON,40PU
Pull-up/pull-down mismatch (MMPUPD)

Notes:
0.2 VDDQ
0.9
1.0
1.45
RZQ/6
0.5 VDDQ
0.9
1.0
1.15
RZQ/6
0.8 VDDQ
0.6
1.0
1.15
RZQ/6
VIL(AC) to VIH(AC)
10
N/A
10
1. Tolerance limits assume RZQ of 240 1% and are applicable after proper ZQ calibration has been performed at a stable temperature and voltage (VDDQ = VDD; VSSQ = VSS).
Refer to DDR3L 40 Ohm Output Driver Sensitivity (page 65) if either the temperature
or the voltage changes after calibration.
2. Measurement definition for mismatch between pull-up and pull-down (MMPUPD). Measure both RON(PU) and RON(PD) at 0.5 VDDQ:
RON(PU) - RON(PD)
MMPUPD =
100
RON,nom
3. For IT and AT (1Gb only) devices, the minimum values are derated by 6% when the device operates between 40C and 0C (TC).
A larger maximum limit will result in slightly lower minimum currents.
DDR3L 40 Ohm Output Driver Sensitivity

If either the temperature or the voltage changes after I/O calibration, then the tolerance
limits listed in Table 43 can be expected to widen according to Table 44 and Table 45
(page 66).
Table 44: DDR3L 40 Ohm Output Driver Sensitivity Definition
Symbol
Min
Max
Unit
RON(PD) @ 0.2 VDDQ
RZQ/6
RON(PD) @ 0.5 VDDQ
RZQ/6
RON(PD) @ 0.8 VDDQ
RZQ/6
RON(PU) @ 0.2 VDDQ
RZQ/6
RON(PU) @ 0.5 VDDQ
RZQ/6
RON(PU) @ 0.8 VDDQ
RZQ/6
Note:
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1. T = T - T(@CALIBRATION), V = VDDQ - VDDQ(@CALIBRATION); and VDD = VDDQ.
65

Table 45: 40 Ohm Output Driver Voltage and Temperature Sensitivity
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Change
Min
Max
Unit
dRONdTM
1.5
%/C
dRONdVM
0.15
%/mV
dRONdTL
1.5
%/C
dRONdVL
0.15
%/mV
dRONdTH
1.5
%/C
dRONdVH
0.15
%/mV
66

Output Characteristics and Operating Conditions

Table 46: DDR3L Single-Ended Output Driver Characteristics
Parameter/Condition
Output leakage current: DQ are disabled;
0V VOUT VDDQ; ODT is disabled; ODT is HIGH
Output slew rate: Single-ended; For rising and falling edges,
measure between VOL(AC) = VREF - 0.09 VDDQ and VOH(AC) =
VREF + 0.09 VDDQ
Symbol
Min
Max
Unit
Notes
IOZ
SRQse
1.75
V/ns
1, 2, 3, 4
Single-ended DC high-level output voltage
VOH(DC)
0.8 VDDQ
1, 2, 5
Single-ended DC mid-point level output voltage
VOM(DC)
0.5 VDDQ
1, 2, 5
Single-ended DC low-level output voltage
VOL(DC)
0.2 VDDQ
1, 2, 5
Single-ended AC high-level output voltage
VOH(AC)
VTT + 0.1 VDDQ
1, 2, 3, 6
Single-ended AC low-level output voltage
VOL(AC)
VTT - 0.1 VDDQ
1, 2, 3, 6
1, 7
Delta RON between pull-up and pull-down for DQ/DQS
MMPUPD
Test load for AC timing and output slew rates

Notes:
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10
10
Output to VTT (VDDQ/2) via 25 resistor
1. RZQ of 240 1% with RZQ/7 enabled (default 34 driver) and is applicable after proper ZQ calibration has been performed at a stable temperature and voltage (VDDQ = VDD;
VSSQ = VSS).
2. VTT = VDDQ/2.
3. See Figure 29 (page 70) for the test load configuration.
4. The 6 V/ns maximum is applicable for a single DQ signal when it is switching either from
HIGH to LOW or LOW to HIGH while the remaining DQ signals in the same byte lane are
either all static or all switching in the opposite direction. For all other DQ signal switching combinations, the maximum limit of 6 V/ns is reduced to 5 V/ns.
5. See Figure 26 (page 61) for IV curve linearity. Do not use AC test load.
6. See Slew Rate Definitions for Single-Ended Output Signals (page 70) for output slew
rate.
7. See Figure 26 (page 61) for additional information.
8. See Figure 27 (page 68) for an example of a single-ended output signal.
67

Figure 27: DQ Output Signal
MAX output
VOH(AC)
VOL(AC)
MIN output
Table 47: DDR3L Differential Output Driver Characteristics

Parameter/Condition
Output leakage current: DQ are disabled;
0V VOUT VDDQ; ODT is disabled; ODT is HIGH
DDR3L Output slew rate: Differential; For rising and falling edges, measure between VOL,diff(AC) = 0.18 VDDQ
and VOH,diff(AC) = 0.18 VDDQ
Symbol
Min
Max
Unit
Notes
IOZ
SRQdiff
3.5
12
V/ns
Differential high-level output voltage
VOH,diff(AC)
+0.2 VDDQ
1, 4
Differential low-level output voltage
VOL,diff(AC)
0.2 VDDQ
1, 4
1, 5
Delta Ron between pull-up and pull-down for DQ/DQS
MMPUPD
Test load for AC timing and output slew rates

Notes:
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10
10
Output to VTT (VDDQ/2) via 25 resistor
VSSQ = VSS).
2. VREF = VDDQ/2; slew rate @ 5 V/ns, interpolate for faster slew rate.
4. See Table 50 (page 72) for the output slew rate.
5. See Table 36 (page 62) for additional information.
6. See Figure 28 (page 69) for an example of a differential output signal.
68

Table 48: DDR3L Differential Output Driver Characteristics VOX(AC)
Parameter/
Condition
Output differential
crosspoint voltage
Parameter/
Condition
Output differential
crosspoint voltage
DDR3L- 800/1066/1333 DQS/DQS# Differential Slew Rate
Symbol
3.5V/ns 4V/ns
5V/ns
6V/ns
7V/ns
8V/ns
9V/ns
10V/ns
12V/ns
Unit
VOX(AC) Max
115
130
135
195
205
205
205
205
205
mV
Min
115
130
135
195
205
205
205
205
205
mV
DDR3L-1600/1866/2133 DQS/DQS# Differential Slew Rate
Symbol
3.5V/ns 4V/ns
5v/ns
6V/ns
7V/ns
8V/ns
9V/ns
10V/ns
12V/ns
Unit
VOX(AC) Max
90
105
135
155
180
205
205
205
205
mV
Min
90
105
135
155
180
205
205
205
205
mV
Notes:
VSSQ = VSS).
3. See Figure 28 (page 69) for an example of a differential output signal.
4. For a differential slew rate between the list values, the VOX(AC) value may be obtained
by linear interpolation.
Figure 28: Differential Output Signal

MAX output
VOH
VOX(AC)max
X
X
VOX(AC)min
VOL
MIN output
PDF: 09005aef85993e22
69

Reference Output Load
Figure 29 (page 70) represents the effective reference load of 25 used in defining the
relevant device AC timing parameters (except ODT reference timing) as well as the output slew rate measurements. It is not intended to be a precise representation of a particular system environment or a depiction of the actual load presented by a production
tester. System designers should use IBIS or other simulation tools to correlate the timing reference load to a system environment.
Figure 29: Reference Output Load for AC Timing and Output Slew Rate
VDDQ/2
DUT
VREF
RTT = 25
DQ
DQS
DQS#
ZQ
VTT = VDDQ/2
Timing reference point

RZQ = 240
VSS
Slew Rate Definitions for Single-Ended Output Signals

The single-ended output driver is summarized in Table 46 (page 67). With the reference
load for timing measurements, the output slew rate for falling and rising edges is defined and measured between V OL(AC) and V OH(AC) for single-ended signals.
Table 49: Single-Ended Output Slew Rate Definition
Single-Ended Output Slew
Rates (Linear Signals)
Measured
Output
Edge
From
To
Calculation
DQ
Rising
VOL(AC)
VOH(AC)
VOH(AC) - VOL(AC)
TRse
Falling
VOH(AC)
VOL(AC)
VOH(AC) - VOL(AC)
TFse
PDF: 09005aef85993e22
70

Figure 30: Nominal Slew Rate Definition for Single-Ended Output Signals
TRse
VOH(AC)
VTT
VOL(AC)
TFse
PDF: 09005aef85993e22
71

Slew Rate Definitions for Differential Output Signals
The differential output driver is summarized in Table 47 (page 68). With the reference
load for timing measurements, the output slew rate for falling and rising edges is defined and measured between V OL(AC) and V OH(AC) for differential signals.
Table 50: Differential Output Slew Rate Definition
Differential Output Slew
Rates (Linear Signals)
Measured
Output
Edge
From
To
Calculation
DQS, DQS#
Rising
VOL,diff(AC)
VOH,diff(AC)
VOH,diff(AC) - VOL,diff(AC)
TRdiff
Falling
VOH,diff(AC)
VOL,diff(AC)
VOH,diff(AC) - VOL,diff(AC)
TFdiff
Figure 31: Nominal Differential Output Slew Rate Definition for DQS, DQS#
TRdiff
VOH,diff(AC)
VOL,diff(AC)
TFdiff
PDF: 09005aef85993e22
72

Speed Bin Tables
Speed Bin Tables

Table 51: DDR3-1066 Speed Bins
DDR3-1066 Speed Bin
-187E
-187
CL-tRCD-tRP
7-7-7
8-8-8
Parameter
Symbol
Min
Max
Min
Max
Unit
tAA
13.125
15
ns
tRCD
13.125
15
ns
PRECHARGE command period
tRP
13.125
15
ns
ACTIVATE-to-ACTIVATE or REFRESH command

period
tRC
50.625
52.5
ns
tRAS
37.5
9 x tREFI
37.5
9 x tREFI
ns
3.0
3.3
3.0
3.3
ns
ns
Internal READ command to first data

ACTIVATE to internal READ or WRITE delay
time
ACTIVATE-to-PRECHARGE command period

CL = 5
CL = 6
CL = 7
CL = 8
CWL = 5
tCK
(AVG)
CWL = 6
tCK
(AVG)
CWL = 5
tCK
(AVG)
ns
CWL = 6
tCK
(AVG)
Reserved
Reserved
ns
CWL = 5
tCK
(AVG)
Reserved
Reserved
ns
CWL = 6
tCK
(AVG)
Reserved
ns
2, 3
CWL = 5
tCK
(AVG)
Reserved
ns
CWL = 6
tCK
(AVG)
ns
Reserved
2.5
<2.5
Reserved
1.875
Supported CWL settings

Notes:
3.3
1.875
Supported CL settings
PDF: 09005aef85993e22
Notes
<2.5
Reserved
2.5
3.3
1.875
<2.5
5, 6, 7, 8
5, 6, 8
CK
5, 6
5, 6
CK
1. tREFI depends on TOPER.

2. The CL and CWL settings result in tCK requirements. When making a selection of tCK,
both CL and CWL requirement settings need to be fulfilled.
3. Reserved settings are not allowed.
73

Speed Bin Tables
DDR3-1333 Speed Bin
-15E1
-152
CL-tRCD-tRP
9-9-9
10-10-10
Parameter
Symbol
Min
Max
Min
Max
Unit
tAA
13.5
15
ns
tRCD
13.5
15
ns
tRP
13.5
15
ns
ACTIVATE-to-ACTIVATE or REFRESH command

period
tRC
49.5
51
ns
tRAS
36
9 x tREFI
36
9 x tREFI
ns
3.0
3.3
3.0
3.3
ns
ns

time

CL = 5
CL = 6
CL = 7
CL = 8
CL = 9
CL = 10
CWL = 5
tCK
(AVG)
CWL = 6, 7
tCK
(AVG)
CWL = 5
tCK
(AVG)
ns
CWL = 6
tCK
(AVG)
Reserved
Reserved
ns
CWL = 7
tCK
(AVG)
Reserved
Reserved
ns
CWL = 5
tCK
(AVG)
Reserved
Reserved
ns
CWL = 6
tCK
(AVG)
Reserved
ns
4, 5
CWL = 7
tCK
(AVG)
Reserved
Reserved
ns
CWL = 5
tCK
(AVG)
Reserved
Reserved
ns
CWL = 6
tCK
(AVG)
ns
CWL = 7
tCK
(AVG)
Reserved
Reserved
ns
CWL = 5, 6
tCK
(AVG)
Reserved
Reserved
ns
CWL = 7
tCK
(AVG)
Reserved
ns
4, 5
CWL = 5, 6
tCK
(AVG)
Reserved
ns
CWL = 7
tCK
(AVG)
ns
Reserved
2.5
<2.5
1.875
1.5
<2.5
<1.875
Reserved
1.5

Notes:
3.3
1.875
PDF: 09005aef85993e22
Notes
<1.875
Reserved
2.5
3.3
1.875
1.5
<2.5
<1.875
5, 6, 7, 8, 9, 10
5, 6, 8, 10
CK
5, 6, 7
5, 6, 7
CK
1.
2.
3.
4.
The -15E speed grade is backward compatible with 1066, CL = 7 (-187E).

The -15 speed grade is backward compatible with 1066, CL = 8 (-187).
tREFI depends on T
OPER.
The CL and CWL settings result in tCK requirements. When making a selection of tCK,
74

Speed Bin Tables
-1251
DDR3-1600 Speed Bin

CL-tRCD-tRP
11-11-11
Parameter
Symbol
Min
Max
Unit
tAA
13.75
ns
tRCD
13.75
ns
tRP
13.75
ns
ACTIVATE-to-ACTIVATE or REFRESH command period
tRC
48.75
ns
tRAS
35
9 x tREFI
ns
3.0
3.3
ns
ns

ACTIVATE to internal READ or WRITE delay time

CL = 5
CL = 6
CL = 7
CL = 8
CL = 9
CL = 10
CL = 11
CWL = 5
tCK
(AVG)
CWL = 6, 7, 8
tCK
(AVG)
CWL = 5
tCK
(AVG)
ns
CWL = 6
tCK
(AVG)
Reserved
ns
CWL = 7, 8
tCK
(AVG)
Reserved
ns
CWL = 5
tCK
(AVG)
Reserved
ns
CWL = 6
tCK
(AVG)
ns
CWL = 7
tCK
(AVG)
Reserved
ns
CWL = 8
tCK
(AVG)
Reserved
ns
CWL = 5
tCK
(AVG)
Reserved
ns
CWL = 6
tCK
(AVG)
ns
CWL = 7
tCK
(AVG)
Reserved
ns
CWL = 8
tCK
(AVG)
Reserved
ns
CWL = 5, 6
tCK
(AVG)
Reserved
ns
CWL = 7
tCK
(AVG)
ns
CWL = 8
tCK
(AVG)
Reserved
ns
CWL = 5, 6
tCK
(AVG)
Reserved
ns
CWL = 7
tCK
(AVG)
ns
CWL = 8
tCK
(AVG)
Reserved
ns
CWL = 5, 6, 7
tCK
(AVG)
Reserved
ns
CWL = 8
tCK
(AVG)
ns
Notes:
PDF: 09005aef85993e22
Notes
Reserved
2.5
3.3
1.875
<2.5
1.875
1.5
1.5
<2.5
<1.875
<1.875
1.25
<1.5
5, 6, 7, 8, 9, 10, 11
CK
5, 6, 7, 8
CK
1. The -125 speed grade is backward compatible with 1333, CL = 9 (-15E) and 1066, CL = 7
(-187E).
75

Speed Bin Tables
-1071
DDR3-1866 Speed Bin

CL-tRCD-tRP
13-13-13
Parameter
Symbol
Min
Max
tAA
13.91
20
tRCD
13.91
ns
tRP
13.91
ns
tRC
47.91
ns
tRAS
34
9 x tREFI
ns
3.0
3.3
ns
ns


CL = 5
CL = 6
CL = 7
CL = 8
CL = 9
CL = 10
CL = 11
CL = 12
CL = 13
CWL = 5
(AVG)
CWL = 6, 7, 8, 9
tCK
(AVG)
CWL = 5
tCK
(AVG)
ns
CWL = 6, 7, 8, 9
tCK
(AVG)
Reserved
ns
CWL = 5, 7, 8, 9
tCK
(AVG)
Reserved
ns
CWL = 6
tCK
(AVG)
ns
CWL = 5, 8, 9
tCK
(AVG)
ns
CWL = 6
tCK
(AVG)
ns
CWL = 7
tCK
(AVG)
Reserved
ns
CWL = 5, 6, 8, 9
tCK
(AVG)
Reserved
ns
CWL = 7
tCK
(AVG)
ns
CWL = 5, 6, 9
tCK
(AVG)
ns
CWL = 7
tCK
(AVG)
ns
CWL = 8
tCK
(AVG)
ns
CWL = 5, 6, 7
tCK
(AVG)
ns
CWL = 8
tCK
(AVG)
ns
CWL = 9
tCK
(AVG)
Reserved
ns
CWL = 5, 6, 7, 8
tCK
(AVG)
Reserved
ns
CWL = 9
tCK
(AVG)
Reserved
ns
CWL = 5, 6, 7, 8
tCK
(AVG)
Reserved
ns
CWL = 9
tCK
(AVG)
ns
PDF: 09005aef85993e22
Notes
tCK
Notes:
Unit
Reserved
2.5
3.3
1.875
<2.5
Reserved
1.875
1.5
<2.5
<1.875
Reserved
1.5
<1.875
Reserved
Reserved
1.25
1.07
<1.5
<1.25
5, 6, 7, 8, 9, 10, 11, 13
CK
5, 6, 7, 8, 9
CK
1. The -107 speed grade is backward compatible with 1600, CL = 11 (-125) , 1333, CL = 9
(-15E) and 1066, CL = 7 (-187E).
76

Speed Bin Tables
-0931
DDR3-2133 Speed Bin

CL-tRCD-tRP
14-14-14
Parameter
Symbol
Min
Max
tAA
13.09
20
tRCD
13.09
ns
tRP
13.09
ns
tRC
46.09
ns
tRAS
33
9 x tREFI
ns
3.0
3.3
ns
ns


CL = 5
CL = 6
CL = 7
CL = 8
CL = 9
CL = 10
CL = 11
CL = 12
CL = 13
CL = 14
CWL = 5
(AVG)
CWL = 6, 7, 8, 9
tCK
(AVG)
CWL = 5
tCK
(AVG)
ns
CWL = 6, 7, 8, 9
tCK
(AVG)
Reserved
ns
CWL = 5, 7, 8, 9
tCK
(AVG)
Reserved
ns
CWL = 6
tCK
(AVG)
ns
CWL = 5, 8, 9
tCK
(AVG)
ns
CWL = 6
tCK
(AVG)
ns
CWL = 7
tCK
(AVG)
Reserved
ns
CWL = 5, 6, 8, 9
tCK
(AVG)
Reserved
ns
CWL = 7
tCK
(AVG)
ns
CWL = 5, 6, 9
tCK
(AVG)
ns
CWL = 7
tCK
(AVG)
ns
CWL = 8
tCK
(AVG)
ns
CWL = 5, 6, 7
tCK
(AVG)
ns
CWL = 8
tCK
(AVG)
ns
CWL = 9
tCK
(AVG)
Reserved
ns
CWL = 5, 6, 7, 8
tCK
(AVG)
Reserved
ns
CWL = 9
tCK
(AVG)
Reserved
ns
CWL = 5, 6, 7, 8
tCK
(AVG)
Reserved
ns
CWL = 9
tCK
(AVG)
1.07
<1.25
ns
CWL = 5, 6, 7, 8, 9
tCK
(AVG)
Reserved
Reserved
ns
CWL = 10
tCK
(AVG)
0.938
<1.07
ns
PDF: 09005aef85993e22
Notes
tCK
Notes:
Unit
Reserved
2.5
3.3
1.875
<2.5
Reserved
1.875
1.5
<2.5
<1.875
Reserved
1.5
<1.875
Reserved
Reserved
1.25
<1.5
5, 6, 7, 8, 9, 10, 11, 13, 14
CK
5, 6, 7, 8, 9
CK
1. The -093 speed grade is backward compatible with 1866, CL = 13 (-107) , 1600, CL = 11
(-125) , 1333, CL = 9 (-15E) and 1066, CL = 7 (-187E).
77
PDF: 09005aef85993e22
Electrical Characteristics and AC Operating Conditions

Table 56: Electrical Characteristics and AC Operating Conditions
Notes 18 apply to the entire table
DDR3L-800
Parameter
Symbol
Min
Max
DDR3L-1066
DDR3L-1333
DDR3L-1600
Min
Max
Min
Max
Min
Max
Unit
Notes
Clock Timing
Clock period average:
DLL disable mode
TC 85C
TC = >85C to 95C
tCK
7800
7800
7800
7800
ns
9, 42
(DLL_DIS)
3900
3900
3900
3900
ns
42
Clock period average: DLL enable mode
tCK
(AVG)
ns
10, 11
High pulse width average
tCH
(AVG)
0.47
0.53
0.47
0.53
0.47
0.53
0.47
0.53
CK
12
Low pulse width average
tCL
(AVG)
0.47
0.53
0.47
0.53
0.47
0.53
CK
12
See Speed Bin Tables for
tCK
range allowed
0.53
DLL locked
100
100
90
90
80
80
70
70
ps
13
DLL locking
tJITper,lck
90
90
80
80
70
70
60
60
ps
13
Clock absolute period
tCK
(ABS)
MIN = tCK (AVG) MIN + tJITper MIN; MAX = tCK (AVG) MAX + tJITper
MAX
Clock absolute high pulse width
tCH
(ABS)
0.43
Clock period jitter
0.43
0.43
0.43
ps
tCK
14
78
(AVG)
Clock absolute low pulse width
tCL
(ABS)
0.43
0.43
0.43
0.43
tCK
15
(AVG)
Cycle-to-cycle jitter
DLL locked
tJITcc
200
180
160
140
ps
16
DLL locking
tJITcc,lck
180
160
140
120
ps
16
Cumulative error across 2 cycles
tERR2per
147
147
132
132
118
118
103
103
ps
17
3 cycles
tERR3per
175
175
157
157
140
140
122
122
ps
17
4 cycles
tERR4per
194
194
175
175
155
155
136
136
ps
17
5 cycles
tERR5per
209
209
188
188
168
168
147
147
ps
17
6 cycles
tERR6per
222
222
200
200
177
177
155
155
ps
17
7 cycles
tERR7per
232
232
209
209
186
186
163
163
ps
17
8 cycles
tERR8per
241
241
217
217
193
193
169
169
ps
17
9 cycles
tERR9per
249
249
224
224
200
200
175
175
ps
17
10 cycles
tERR10per
257
257
231
231
205
205
180
180
ps
17
11 cycles
tERR11per
263
263
237
237
210
210
184
184
ps
17
12 cycles
tERR12per
269
269
242
242
215
215
188
188
ps
17
ps
17
n = 13, 14 . . . 49, 50
cycles
tERRnper
tERRnper
tERRnper
MIN = (1 + 0.68ln[n]) tJITper MIN

MAX = (1 + 0.68ln[n]) tJITper MAX

0.47
tJITper
PDF: 09005aef85993e22
Table 56: Electrical Characteristics and AC Operating Conditions (Continued)

DDR3L-800
Parameter
Symbol
Min
Max
DDR3L-1066
DDR3L-1333
DDR3L-1600
Min
Max
Min
Max
Min
Max
Unit
Notes
ps
18, 19,
44
DQ Input Timing
Data setup time to
DQS, DQS#
Base (specification)
tDS
VREF @ 1 V/ns
Data setup time to
DQS, DQS#
tDS
40
250
200
ps
19, 20
140
90
45
25
ps
18, 19,
44
180
160
ps
19, 20
(AC135)
VREF @ 1 V/ns
VREF @ 1 V/ns
Minimum data pulse width
275
250
tDH
160
110
75
55
ps
18, 19
(DC90)
250
200
165
145
ps
19, 20
tDIPW
600
490
400
360
ps
41
150
125
100
ps
tCK
DQ Output Timing
DQS, DQS# to DQ skew, per access
DQ output hold time from DQS, DQS#
tDQSQ
tQH
0.38
200
0.38
0.38
0.38
21
79
(AVG)
DQ Low-Z time from CK, CK#
tLZDQ
800
400
600
300
500
250
450
225
ps
22, 23
DQ High-Z time from CK, CK#
tHZDQ
400
300
250
225
ps
22, 23
DQS, DQS# rising to CK, CK# rising
tDQSS
0.25
0.25
0.25
0.25
0.25
0.25
0.27
0.27
CK
25
DQS, DQS# differential input low pulse width
tDQSL
0.45
0.55
0.45
0.55
0.45
0.55
0.45
0.55
CK
DQS, DQS# differential input high pulse

width
tDQSH
0.45
0.55
0.45
0.55
0.45
0.55
0.45
0.55
CK
DQS, DQS# falling setup to CK, CK# rising
tDSS
0.2
0.2
0.2
0.18
CK
25
DQS, DQS# falling hold from CK, CK# rising
tDSH
0.2
0.2
0.2
0.18
CK
25
DQS, DQS# differential WRITE preamble
tWPRE
0.9
0.9
0.9
0.9
CK
DQS, DQS# differential WRITE postamble
tWPST
0.3
0.3
0.3
0.3
CK
DQ Strobe Input Timing
DQ Strobe Output Timing

DQS, DQS# rising to/from rising CK, CK#
tDQSCK
400
400
300
300
255
255
225
225
ps
23

when DLL is disabled
tDQSCK
10
10
10
10
ns
26
(DLL_DIS)
DQS, DQS# differential output high time
tQSH
0.38
0.38
0.40
0.40
CK
21
DQS, DQS# differential output low time
tQSL
0.38
0.38
0.40
0.40
CK
21

Data hold time from

DQS, DQS#
90
(AC160)
PDF: 09005aef85993e22

DDR3L-800
Parameter
DDR3L-1066
DDR3L-1333
DDR3L-1600
Symbol
Min
Max
Min
Max
Min
Max
Min
Max
Unit
Notes
DQS, DQS# Low-Z time (RL - 1)
tLZDQS
800
400
600
300
500
250
450
225
ps
22, 23
DQS, DQS# High-Z time (RL + BL/2)
tHZDQS
400
300
250
225
ps
22, 23
DQS, DQS# differential READ preamble
tRPRE
0.9
Note 24
0.9
Note 24
0.9
Note 24
0.9
Note 24
CK
23, 24
DQS, DQS# differential READ postamble
tRPST
0.3
Note 27
0.3
Note 27
0.3
Note 27
0.3
Note 27
CK
23, 27
DLL locking time
tDLLK
512
512
512
512
CK
28
tIS
215
140
80
60
ps
29, 30,
44
375
300
240
220
ps
20, 30
365
290
205
185
ps
29, 30,
44
500
425
340
320
ps
20, 30
285
210
150
130
ps
29, 30,
44
375
300
240
220
ps
20, 30
900
780
620
560
ps
41
Command and Address Timing

(AC160)
VREF @ 1 V/ns
CTRL, CMD, ADDR

setup to CK,CK#
tIS
(AC135)
VREF @ 1 V/ns
80
CTRL, CMD, ADDR

setup to CK,CK#
tIH
(DC90
VREF @ 1 V/ns
Minimum CTRL, CMD, ADDR pulse width
tIPW
tRCD
tRCD
ns
31
ns
31
tRP
See Speed Bin Tables for tRP
tRAS
See Speed Bin Tables for tRAS
ns
31, 32
tRC
See Speed Bin Tables for tRC
ns
31, 43
ACTIVATE-to-ACTIVATE x4/x8 (1KB page

minimum command
size)
period
x16 (2KB page size)
tRRD
MIN = greater of MIN = greater of MIN = greater of MIN = greater of

4CK or 10ns
4CK or 7.5ns
4CK or 6ns
4CK or 6ns
CK
31
Four ACTIVATE
windows
tFAW

ACTIVATE-to-ACTIVATE command period
x4/x8 (1KB page

size)
x16 (2KB page size)
Write recovery time

Delay from start of internal WRITE
transaction to internal READ command
READ-to-PRECHARGE time
MIN = greater of 4CK or 10ns
MIN = greater of 4CK or 7.5ns
CK
31
40
37.5
30
30
ns
31
50
50
45
40
ns
31
tWR
MIN = 15ns; MAX = N/A
ns
31, 32,
33,34
tWTR
MIN = greater of 4CK or 7.5ns; MAX = N/A
CK
31, 34
tRTP
CK
31, 32

CTRL, CMD, ADDR

setup to CK,CK#
PDF: 09005aef85993e22

DDR3L-800
Parameter
Symbol
Min
Max
DDR3L-1066
DDR3L-1333
DDR3L-1600
Min
Min
Min
Max
Max
Max
Unit
tCCD
MIN = 4CK; MAX = N/A
CK
Auto precharge write recovery + precharge

time
tDAL
MIN = WR + tRP/tCK (AVG); MAX = N/A
CK
MODE REGISTER SET command cycle time
tMRD
CK
MODE REGISTER SET command update delay
tMOD
MIN = greater of 12CK or 15ns; MAX = N/A
CK
MULTIPURPOSE REGISTER READ burst end to

mode register set for multipurpose register
exit
tMPRR
CK
ZQCL command: Long

calibration time
tZQinit
512
512
512
512
CK
tZQoper
256
256
256
256
CK
tZQCS
64
64
64
64
CK
Notes
Calibration Timing
POWER-UP and RESET operation
Normal operation
ZQCS command: Short calibration time
81
Initialization and Reset Timing

tXPR
MIN = greater of 5CK or tRFC + 10ns; MAX = N/A
CK
tVDDPR
MIN = N/A; MAX = 200
ms
RESET# LOW to power supplies stable
tRPS
MIN = 0; MAX = 200
ms
RESET# LOW to I/O and RTT High-Z
tIOZ
MIN = N/A; MAX = 20
ns
Exit reset from CKE HIGH to a valid command

Begin power supply ramp to power supplies

stable
35
Refresh Timing
REFRESH-to-ACTIVATE or REFRESH
command period
tRFC
1Gb
MIN = 110; MAX = 70,200
ns
tRFC
2Gb
MIN = 160; MAX = 70,200
ns
tRFC
4Gb
MIN = 260; MAX = 70,200
ns
8Gb
MIN = 350; MAX = 70,200
ns
64 (1X)
ms
36
32 (2X)
ms
36
7.8 (64ms/8192)
36
3.9 (32ms/8192)
36
CK
tRFC
Maximum refresh
period
Maximum average
periodic refresh
TC 85C
TC > 85C
TC 85C
tREFI
TC > 85C
Self Refresh Timing
Exit self refresh to commands not requiring a

locked DLL
tXS

CAS#-to-CAS# command delay
PDF: 09005aef85993e22

DDR3L-800
Parameter
Symbol
Min
Max
DDR3L-1066
DDR3L-1333
DDR3L-1600
Min
Min
Min
Unit
Notes
Exit self refresh to commands requiring a

locked DLL
tXSDLL
MIN = tDLLK (MIN); MAX = N/A
Max
Max
Max
CK
28
Minimum CKE low pulse width for self refresh entry to self refresh exit timing
tCKESR
MIN = tCKE (MIN) + CK; MAX = N/A
CK
Valid clocks after self refresh entry or powerdown entry
tCKSRE
CK
Valid clocks before self refresh exit,

power-down exit, or reset exit
tCKSRX
CK
CKE MIN pulse width

Command pass disable delay
82
Power-down entry to power-down exit timing
(MIN)
Greater of 3CK
or 7.5ns
Greater of 3CK
or 5.625ns
tCPDED
tPD
Greater of 3CK
or 5.625ns
Greater of 3CK
or 5ns
MIN = 1; MAX = N/A

MIN =
tCKE
(MIN); MAX = 9 * tREFI
CK
CK
CK
tANPD
WL - 1CK
CK
Power-down entry period: ODT either

synchronous or asynchronous
PDE
Greater of tANPD or tRFC - REFRESH command to CKE LOW time
CK
Power-down exit period: ODT either

PDX
Begin power-down period prior to CKE

registered HIGH
tANPD
+ tXPDLL
CK
Power-Down Entry Minimum Timing

ACTIVATE command to power-down entry
tACTPDEN
MIN = 1
CK
PRECHARGE/PRECHARGE ALL command to

power-down entry
tPRPDEN
MIN = 1
CK
REFRESH command to power-down entry
tREFPDEN
MIN = 1
CK
MRS command to power-down entry
tMRSPDEN
tMOD
MIN =
(MIN)
CK
READ/READ with auto precharge command

to power-down entry
tRDPDEN
MIN = RL + 4 + 1
CK
WRITE command to
power-down entry
BL8 (OTF, MRS)

BC4OTF
tWRPDEN
MIN = WL + 4 + tWR/tCK (AVG)
CK
BC4MRS
tWRPDEN
MIN = WL + 2 + tWR/tCK (AVG)
CK
37

Power-Down Timing
tCKE
PDF: 09005aef85993e22

DDR3L-800
Parameter
Symbol
WRITE with auto

BL8 (OTF, MRS)
precharge command to BC4OTF
power-down entry
BC4MRS
tWRAP-
Min
Max
DDR3L-1066
DDR3L-1333
DDR3L-1600
Min
Min
Min
Max
Max
Max
Unit
MIN = WL + 4 + WR + 1
CK
MIN = WL + 2 + WR + 1
CK
Notes
DEN
tWRAP-
DEN
Power-Down Exit Timing
DLL on, any valid command, or DLL off to
commands not requiring locked DLL
MIN = greater of 3CK or 7.5ns;

MAX = N/A
tXPDLL
MIN = greater of 3CK or 6ns;

MAX = N/A
CK
CK
28
CK
38
ODT Timing
RTT synchronous turn-on delay
ODTLon
RTT synchronous turn-off delay
ODTLoff
CWL + AL - 2CK
83
CK
40
RTT turn-on from ODTL on reference
tAON
400
400
300
CWL + AL - 2CK
300
250
250
225
225
ps
23, 38
RTT turn-off from ODTL off reference
tAOF
0.3
0.7
0.3
0.7
0.3
0.7
0.3
0.7
CK
39, 40
Asynchronous RTT turn-on delay

(power-down with DLL off)
tAONPD
MIN = 2; MAX = 8.5
ns
38
Asynchronous RTT turn-off delay

tAOFPD
MIN = 2; MAX = 8.5
ns
40
ODT HIGH time with WRITE command and

BL8
ODTH8
MIN = 6; MAX = N/A
CK
ODT HIGH time without WRITE command or

with WRITE command and BC4
ODTH4
MIN = 4; MAX = N/A
CK
Dynamic ODT Timing

RTT,nom-to-RTT(WR) change skew
ODTLcnw
WL - 2CK
CK
RTT(WR)-to-RTT,nom change skew - BC4
ODTLcwn4
4CK + ODTLoff
CK
RTT(WR)-to-RTT,nom change skew - BL8
ODTLcwn8
6CK + ODTLoff
CK
RTT dynamic change skew
tADC
0.3
0.7
0.3
0.7
0.3
0.7
0.3
0.7
CK
40
40
CK
Write Leveling Timing

First DQS, DQS# rising edge
DQS, DQS# delay
Write leveling setup from rising CK, CK#
crossing to rising DQS, DQS# crossing
tWLMRD
40
40
tWLDQSEN
25
25
25
25
CK
tWLS
325
245
195
165
ps
39

Precharge power-down with DLL off to

commands requiring a locked DLL
tXP
PDF: 09005aef85993e22

DDR3L-800
Parameter
DDR3L-1066
DDR3L-1333
DDR3L-1600
Symbol
Min
Max
Min
Max
Min
Max
Min
Max
Unit
Write leveling hold from rising DQS, DQS#

crossing to rising CK, CK# crossing
tWLH
325
245
195
165
ps
Write leveling output delay
tWLO
7.5
ns
Write leveling output error
tWLOE
ns
Notes

84

Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
17.
18.
PDF: 09005aef85993e22
AC timing parameters are valid from specified TC MIN to TC MAX values.

All voltages are referenced to VSS.
Output timings are only valid for RON34 output buffer selection.
The unit tCK (AVG) represents the actual tCK (AVG) of the input clock under operation.
The unit CK represents one clock cycle of the input clock, counting the actual clock
edges.
AC timing and IDD tests may use a VIL-to-VIH swing of up to 900mV in the test environment, but input timing is still referenced to VREF (except tIS, tIH, tDS, and tDH use the
AC/DC trip points and CK, CK# and DQS, DQS# use their crossing points). The minimum
slew rate for the input signals used to test the device is 1 V/ns for single-ended inputs
and 2 V/ns for differential inputs in the range between VIL(AC) and VIH(AC).
All timings that use time-based values (ns, s, ms) should use tCK (AVG) to determine the
correct number of clocks (Table 56 (page 78) uses CK or tCK [AVG] interchangeably). In
the case of noninteger results, all minimum limits are to be rounded up to the nearest
whole integer, and all maximum limits are to be rounded down to the nearest whole
integer.
Strobe or DQSdiff refers to the DQS and DQS# differential crossing point when DQS is
the rising edge. Clock or CK refers to the CK and CK# differential crossing point when
CK is the rising edge.
This output load is used for all AC timing (except ODT reference timing) and slew rates.
The actual test load may be different. The output signal voltage reference point is
VDDQ/2 for single-ended signals and the crossing point for differential signals (see Figure
29 (page 70)).
When operating in DLL disable mode, Micron does not warrant compliance with normal
mode timings or functionality.
The clocks tCK (AVG) is the average clock over any 200 consecutive clocks and tCK (AVG)
MIN is the smallest clock rate allowed, with the exception of a deviation due to clock
jitter. Input clock jitter is allowed provided it does not exceed values specified and must
be of a random Gaussian distribution in nature.
Spread spectrum is not included in the jitter specification values. However, the input
clock can accommodate spread-spectrum at a sweep rate in the range of 2060 kHz with
an additional 1% of tCK (AVG) as a long-term jitter component; however, the spread
spectrum may not use a clock rate below tCK (AVG) MIN.
The clocks tCH (AVG) and tCL (AVG) are the average half clock period over any 200 consecutive clocks and is the smallest clock half period allowed, with the exception of a deviation due to clock jitter. Input clock jitter is allowed provided it does not exceed values
specified and must be of a random Gaussian distribution in nature.
The period jitter (tJITper) is the maximum deviation in the clock period from the average
or nominal clock. It is allowed in either the positive or negative direction.
tCH (ABS) is the absolute instantaneous clock high pulse width as measured from one
rising edge to the following falling edge.
tCL (ABS) is the absolute instantaneous clock low pulse width as measured from one falling edge to the following rising edge.
The cycle-to-cycle jitter tJITcc is the amount the clock period can deviate from one cycle
to the next. It is important to keep cycle-to-cycle jitter at a minimum during the DLL
locking time.
The cumulative jitter error tERRnper, where n is the number of clocks between 2 and 50,
is the amount of clock time allowed to accumulate consecutively away from the average
clock over n number of clock cycles.
tDS (base) and tDH (base) values are for a single-ended 1 V/ns slew rate DQs and 2 V/ns
slew rate differential DQS, DQS#; when DQ single-ended slew rate is 2V/ns, the DQS differential slew rate is 4V/ns.
85

19. These parameters are measured from a data signal (DM, DQ0, DQ1, and so forth) transition edge to its respective data strobe signal (DQS, DQS#) crossing.
20. The setup and hold times are listed converting the base specification values (to which
derating tables apply) to VREF when the slew rate is 1 V/ns. These values, with a slew rate
of 1 V/ns, are for reference only.
21. When the device is operated with input clock jitter, this parameter needs to be derated
by the actual tJITper (larger of tJITper (MIN) or tJITper (MAX) of the input clock (output
deratings are relative to the SDRAM input clock).
22. Single-ended signal parameter.
23. The DRAM output timing is aligned to the nominal or average clock. Most output parameters must be derated by the actual jitter error when input clock jitter is present,
even when within specification. This results in each parameter becoming larger. The following parameters are required to be derated by subtracting tERR10per (MAX): tDQSCK
(MIN), tLZDQS (MIN), tLZDQ (MIN), and tAON (MIN). The following parameters are required to be derated by subtracting tERR10per (MIN): tDQSCK (MAX), tHZ (MAX), tLZDQS
(MAX), tLZDQ MAX, and tAON (MAX). The parameter tRPRE (MIN) is derated by subtracting tJITper (MAX), while tRPRE (MAX) is derated by subtracting tJITper (MIN).
24. The maximum preamble is bound by tLZDQS (MAX).
25. These parameters are measured from a data strobe signal (DQS, DQS#) crossing to its respective clock signal (CK, CK#) crossing. The specification values are not affected by the
amount of clock jitter applied, as these are relative to the clock signal crossing. These
parameters should be met whether clock jitter is present.
26. The tDQSCK (DLL_DIS) parameter begins CL + AL - 1 cycles after the READ command.
27. The maximum postamble is bound by tHZDQS (MAX).
28. Commands requiring a locked DLL are: READ (and RDAP) and synchronous ODT commands. In addition, after any change of latency tXPDLL, timing must be met.
29. tIS (base) and tIH (base) values are for a single-ended 1 V/ns control/command/address
slew rate and 2 V/ns CK, CK# differential slew rate.
30. These parameters are measured from a command/address signal transition edge to its
respective clock (CK, CK#) signal crossing. The specification values are not affected by
the amount of clock jitter applied as the setup and hold times are relative to the clock
signal crossing that latches the command/address. These parameters should be met
whether clock jitter is present.
31. For these parameters, the DDR3L SDRAM device supports tnPARAM (nCK) = RU(tPARAM
[ns]/tCK[AVG] [ns]), assuming all input clock jitter specifications are satisfied. For example, the device will support tnRP (nCK) = RU(tRP/tCK[AVG]) if all input clock jitter specifications are met. This means that for DDR3-800 6-6-6, of which tRP = 5ns, the device will
support tnRP = RU(tRP/tCK[AVG]) = 6 as long as the input clock jitter specifications are
met. That is, the PRECHARGE command at T0 and the ACTIVATE command at T0 + 6 are
valid even if six clocks are less than 15ns due to input clock jitter.
32. During READs and WRITEs with auto precharge, the DDR3 SDRAM will hold off the internal PRECHARGE command until tRAS (MIN) has been satisfied.
33. When operating in DLL disable mode, the greater of 4CK or 15ns is satisfied for tWR.
34. The start of the write recovery time is defined as follows:
For BL8 (fixed by MRS or OTF): Rising clock edge four clock cycles after WL
For BC4 (OTF): Rising clock edge four clock cycles after WL
For BC4 (fixed by MRS): Rising clock edge two clock cycles after WL
35. RESET# should be LOW as soon as power starts to ramp to ensure the outputs are in
High-Z. Until RESET# is LOW, the outputs are at risk of driving and could result in excessive current, depending on bus activity.
PDF: 09005aef85993e22
86

36. The refresh period is 64ms when TC is less than or equal to 85C. This equates to an average refresh rate of 7.8125s. However, nine REFRESH commands should be asserted at
least once every 70.3s. When TC is greater than 85C, the refresh period is 32ms.
37. Although CKE is allowed to be registered LOW after a REFRESH command when
tREFPDEN (MIN) is satisfied, there are cases where additional time such as tXPDLL (MIN)
is required.
38. ODT turn-on time MIN is when the device leaves High-Z and ODT resistance begins to
turn on. ODT turn-on time maximum is when the ODT resistance is fully on. The ODT
reference load is shown in Figure 22 (page 58). This output load is used for ODT timings
(see Figure 29 (page 70)).Designs that were created prior to JEDEC tightening the maximum limit from 9ns to 8.5ns will be allowed to have a 9ns maximum.
39. Half-clock output parameters must be derated by the actual tERR10per and tJITdty when
input clock jitter is present. This results in each parameter becoming larger. The parameters tADC (MIN) and tAOF (MIN) are each required to be derated by subtracting both
tERR10per (MAX) and tJITdty (MAX). The parameters tADC (MAX) and tAOF (MAX) are
required to be derated by subtracting both tERR10per (MAX) and tJITdty (MAX).
40. ODT turn-off time minimum is when the device starts to turn off ODT resistance. ODT
turn-off time maximum is when the DRAM buffer is in High-Z. The ODT reference load is
shown in Figure 22 (page 58). This output load is used for ODT timings (see Figure 29
(page 70)).
41. Pulse width of a input signal is defined as the width between the first crossing of
VREF(DC) and the consecutive crossing of VREF(DC).
42. Should the clock rate be larger than tRFC (MIN), an AUTO REFRESH command should
have at least one NOP command between it and another AUTO REFRESH command. Additionally, if the clock rate is slower than 40ns (25 MHz), all REFRESH commands should
be followed by a PRECHARGE ALL command.
43. DRAM devices should be evenly addressed when being accessed. Disproportionate accesses to a particular row address may result in a reduction of REFRESH characteristics or
product lifetime.
PDF: 09005aef85993e22
87
PDF: 09005aef85993e22

Table 57: Electrical Characteristics and AC Operating Conditions for Speed Extensions
DDR3L-1866
Parameter
Symbol
Min
DDR3L-2133
Max
Min
Max
Unit
Notes
Clock Timing
Clock period average:
DLL disable mode
tCK
7800
7800
ns
9, 42
(DLL_DIS)
3900
3900
ns
42
TC = 0C to 85C
TC = >85C to 95C
Clock period average: DLL enable mode
tCK
(AVG)
High pulse width average
tCH
(AVG)
0.47
0.53
0.47
0.53
CK
12
Low pulse width average
tCL
(AVG)
0.47
0.53
0.47
0.53
CK
12
range allowed ns
10, 11
88
DLL locked
tJITper
60
60
50
50
ps
13
DLL locking
tJITper,lck
50
50
40
40
ps
13
tCK
14
Clock absolute period
tCK
(ABS)
Clock absolute high pulse width
tCH
(ABS)
MIN = tCK (AVG) MIN +

tJITper MIN; MAX =
tCK (AVG) MAX +
tJITper MAX ps
0.43
0.43
(AVG)
Clock absolute low pulse width
tCL
(ABS)
0.43
0.43
tCK
15
(AVG)
Cycle-to-cycle jitter
DLL locked
tJITcc
120
120
ps
16
DLL locking
tJITcc,lck
100
100
ps
16

Clock period jitter
tCK
PDF: 09005aef85993e22
Table 57: Electrical Characteristics and AC Operating Conditions for Speed Extensions (Continued)
DDR3L-1866
DDR3L-2133
Symbol
Min
Max
Min
Max
Unit
Notes
tERR2per
88
88
74
74
ps
17
3 cycles
tERR3per
105
105
87
87
ps
17
4 cycles
tERR4per
117
117
97
97
ps
17
5 cycles
tERR5per
126
126
105
105
ps
17
6 cycles
tERR6per
133
133
111
111
ps
17
7 cycles
tERR7per
139
139
116
116
ps
17
8 cycles
tERR8per
145
145
121
121
ps
17
9 cycles
tERR9per
150
150
125
125
ps
17
10 cycles
tERR10per
154
154
128
128
ps
17
11 cycles
tERR11per
158
158
132
132
ps
17
12 cycles
tERR12per
161
161
134
134
89
n = 13, 14 . . . 49, 50
cycles
tERRnper
@ 2 V/ns
tDS
tERRnper
MIN = (1 + 0.68ln[n]) tJITper MIN

tERRnper MAX = (1 + 0.68ln[n]) tJITper MAX
ps
17
ps
17
DQ Input Timing
Data setup time to
DQS, DQS#
VREF @ 2 V/ns
Data hold time from
DQS, DQS#
@ 2 V/ns
70
55
ps
18, 19
135
120.5
ps
19, 20
75
60
ps
18, 19
110
105
ps
19, 20
320
280
ps
41
85
75
ps
tCK
(AC130)
tDH
(DC90)
VREF @ 2 V/ns
Minimum data pulse width
tDIPW
DQS, DQS# to DQ skew, per access
tDQSQ
DQ Output Timing
DQ output hold time from DQS, DQS#
tQH
0.38
0.38
21
(AVG)
DQ Low-Z time from CK, CK#
tLZDQ
390
195
360
180
ps
22, 23
DQ High-Z time from CK, CK#
tHZDQ
195
180
ps
22, 23
DQS, DQS# rising to CK, CK# rising
tDQSS
0.27
0.27
0.27
0.27
CK
25
DQS, DQS# differential input low pulse width
tDQSL
0.45
0.55
0.45
0.55
CK
DQ Strobe Input Timing

Parameter
Cumulative error across 2 cycles
PDF: 09005aef85993e22
DDR3L-1866
Parameter
DDR3L-2133
Symbol
Min
Max
Min
Max
Unit
tDQSH
0.45
0.55
0.45
0.55
CK
DQS, DQS# falling setup to CK, CK# rising
tDSS
0.18
0.18
CK
25
DQS, DQS# falling hold from CK, CK# rising
tDSH
0.18
0.18
CK
25
DQS, DQS# differential WRITE preamble
tWPRE
0.9
0.9
CK
DQS, DQS# differential WRITE postamble
tWPST
0.3
0.3
CK
DQS, DQS# differential input high pulse

width
Notes
DQ Strobe Output Timing

tDQSCK
195
195
180
180
ps
23

when DLL is disabled
tDQSCK
10
10
ns
26
(DLL_DIS)
DQS, DQS# differential output high time
tQSH
0.40
0.40
CK
21
DQS, DQS# differential output low time
tQSL
0.40
0.40
CK
21
DQS, DQS# Low-Z time (RL - 1)
tLZDQS
390
195
360
180
ps
22, 23
DQS, DQS# High-Z time (RL + BL/2)
tHZDQS
195
180
ps
22, 23
DQS, DQS# differential READ preamble
tRPRE
0.9
Note 24
0.9
Note 24
CK
23, 24
DQS, DQS# differential READ postamble
tRPST
0.3
Note 27
0.3
Note 27
CK
23, 27
Command and Address Timing

DLL locking time
CTRL, CMD, ADDR
setup to CK,CK#
tDLLK
512
512
CK
28
tIS
65
60
ps
29, 30,
44
200
195
ps
20, 30
150
135
ps
29, 30,
44
275
260
ps
20, 30
110
95
ps
29, 30
(AC135)
VREF @ 1 V/ns
CTRL, CMD, ADDR

setup to CK,CK#
tIS
(AC125)
VREF @ 1 V/ns
CTRL, CMD, ADDR hold Base (specification)

from CK,CK#
VREF @ 1 V/ns
tIH
(DC90)
200
195
ps
20, 30
Minimum CTRL, CMD, ADDR pulse width
tIPW
535
470
ps
41
tRCD

ACTIVATE-to-ACTIVATE command period
ns
31
tRP
See Speed Bin Tables for tRP
ns
31
tRAS
See Speed Bin Tables for tRAS
ns
31, 32
ns
31, 43
tRC
tRCD
tRC

90
PDF: 09005aef85993e22
DDR3L-1866
Parameter
Symbol
ACTIVATE-to-ACTIVATE 1KB page size

minimum command pe- 2KB page size
riod
tRRD
Four ACTIVATE
windows
tFAW
1KB page size

2KB page size
Min
DDR3L-2133
Unit
Notes
Max
CK
31
CK
31
ns
31
27
Max
25
35
31
MIN = 15ns; MAX = N/A
ns
31, 32,
33
tWTR
CK
31, 34
READ-to-PRECHARGE time
tRTP
CK
31, 32
CAS#-to-CAS# command delay
tCCD
CK
Auto precharge write recovery + precharge

time
tDAL
MIN = WR + tRP/tCK (AVG); MAX = N/A
CK
MODE REGISTER SET command cycle time
tMRD
CK
MODE REGISTER SET command update delay
tMOD
CK
MULTIPURPOSE REGISTER READ burst end to

mode register set for multipurpose register
exit
tMPRR
CK
ZQCL command: Long

calibration time
tZQinit
MIN = N/A
MAX = MAX(512nCK, 640ns)
CK
tZQoper
MIN = N/A
MAX = max(256nCK, 320ns)
CK
Delay from start of internal WRITE transaction to internal READ command
91
Calibration Timing
POWER-UP and RESET operation
Normal operation
ZQCS command: Short calibration time
MIN = N/A
MAX = max(64nCK, 80ns) tZQCS
CK
Initialization and Reset Timing

Exit reset from CKE HIGH to a valid command
Begin power supply ramp to power supplies
stable
tXPR
CK
tVDDPR
MIN = N/A; MAX = 200
ms
RESET# LOW to power supplies stable
tRPS
MIN = 0; MAX = 200
ms
RESET# LOW to I/O and RTT High-Z
tIOZ
MIN = N/A; MAX = 20
ns
Refresh Timing
35

ns
tWR
Write recovery time
35
Min
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DDR3L-1866
Parameter
Symbol
REFRESH-to-ACTIVATE or REFRESH
command period
Min
DDR3L-2133
Max
Min
Max
Unit
tRFC
1Gb
MIN = 110; MAX = 70,200
ns
tRFC
2Gb
MIN = 160; MAX = 70,200
ns
Notes
4Gb
MIN = 260; MAX = 70,200
ns
tRFC
8Gb
MIN = 350; MAX = 70,200
ns
64 (1X)
ms
36
32 (2X)
ms
36
tREFI
7.8 (64ms/8192)
36
3.9 (32ms/8192)
36
tXS
CK
Exit self refresh to commands requiring a

locked DLL
tXSDLL
MIN = tDLLK (MIN);

MAX = N/A
CK
Minimum CKE low pulse width for self refresh entry to self refresh exit timing
tCKESR
MIN = tCKE (MIN) + CK; MAX = N/A
CK
Valid clocks after self refresh entry or powerdown entry
tCKSRE
CK
Valid clocks before self refresh exit,

power-down exit, or reset exit
tCKSRX
CK
Maximum refresh
period
TC 85C
Maximum average
periodic refresh
TC 85C
TC > 85C
TC > 85C
Self Refresh Timing
Exit self refresh to commands not requiring a

locked DLL
92
Power-Down Timing
CKE MIN pulse width
tCKE
Greater of 3CK or 5ns
CK
tCPDED
MIN = 2;
MAX = N/A
CK
tPD
MIN = tCKE (MIN);

MAX = 9 * tREFI
CK
tANPD
WL - 1CK
CK
Power-down entry period: ODT either

PDE
Greater of tANPD or tRFC - REFRESH command to CKE LOW time
CK
Power-down exit period: ODT either

PDX
Command pass disable delay

Power-down entry to power-down exit timing
Begin power-down period prior to CKE
registered HIGH
(MIN)
tANPD
+ tXPDLL
Power-Down Entry Minimum Timing
CK
28

tRFC
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DDR3L-1866
Parameter
Symbol
Min
DDR3L-2133
Max
Min
Max
Unit
ACTIVATE command to power-down entry
tACTPDEN
MIN = 2
CK
PRECHARGE/PRECHARGE ALL command to

power-down entry
tPRPDEN
MIN = 2
CK
tREFPDEN
MIN = 2
CK
MRS command to power-down entry
tMRSPDEN
MIN = tMOD (MIN)
CK
READ/READ with auto precharge command

to power-down entry
tRDPDEN
MIN = RL + 4 + 1
CK
WRITE command to
power-down entry
BL8 (OTF, MRS)

BC4OTF
tWRPDEN
MIN = WL + 4 +
tWR/tCK (AVG)
CK
BC4MRS
tWRPDEN
MIN = WL + 2 +
tWR/tCK (AVG)
CK
BL8 (OTF, MRS)

BC4OTF
tWRAP-
MIN = WL + 4 + WR + 1
CK
BC4MRS
tWRAP-
MIN = WL + 2 + WR + 1
CK
WRITE with auto precharge command to

power-down entry
37
DEN
DEN
Power-Down Exit Timing
DLL on, any valid command, or DLL off to

commands not requiring locked DLL
Precharge power-down with DLL off to
commands requiring a locked DLL
tXP
MIN = greater of 3CK or 6ns;

MAX = N/A
CK
tXPDLL
CK
28
ODT Timing
RTT synchronous turn-on delay
ODTL on
CWL + AL - 2CK
CK
38
RTT synchronous turn-off delay
ODTL off
CWL + AL - 2CK
CK
40
RTT turn-on from ODTL on reference
tAON
195
195
180
180
ps
23, 38
RTT turn-off from ODTL off reference
tAOF
0.3
0.7
0.3
0.7
CK
39, 40
Asynchronous RTT turn-on delay

tAONPD
MIN = 2; MAX = 8.5
ns
38
Asynchronous RTT turn-off delay

tAOFPD
MIN = 2; MAX = 8.5
ns
40
ODT HIGH time with WRITE command and

BL8
ODTH8
MIN = 6; MAX = N/A
CK

93
REFRESH command to power-down entry
Notes
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DDR3L-1866
Parameter
Symbol
ODT HIGH time without WRITE command or

with WRITE command and BC4
ODTH4
Min
DDR3L-2133
Max
Min
Max
MIN = 4; MAX = N/A
Unit
Notes
CK
Dynamic ODT Timing

RTT,nom-to-RTT(WR) change skew
ODTLcnw
WL - 2CK
CK
RTT(WR)-to-RTT,nom change skew - BC4
ODTLcwn4
4CK + ODTLoff
CK
RTT(WR)-to-RTT,nom change skew - BL8
ODTLcwn8
6CK + ODTLoff
CK
RTT dynamic change skew
tADC
0.3
0.7
0.3
0.7
CK
tWLMRD
40
40
CK
tWLDQSEN
25
25
CK
Write leveling setup from rising CK, CK#

crossing to rising DQS, DQS# crossing
tWLS
140
125
ps
Write leveling hold from rising DQS, DQS#

crossing to rising CK, CK# crossing
tWLH
140
125
ps
Write leveling output delay
tWLO
7.5
ns
Write leveling output error
tWLOE
ns
First DQS, DQS# rising edge

DQS, DQS# delay
39
94

Write Leveling Timing

Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
17.
18.
PDF: 09005aef85993e22
AC timing parameters are valid from specified TC MIN to TC MAX values.

All voltages are referenced to VSS.
Output timings are only valid for RON34 output buffer selection.
The unit tCK (AVG) represents the actual tCK (AVG) of the input clock under operation.
The unit CK represents one clock cycle of the input clock, counting the actual clock
edges.
AC timing and IDD tests may use a VIL-to-VIH swing of up to 900mV in the test environment, but input timing is still referenced to VREF (except tIS, tIH, tDS, and tDH use the
AC/DC trip points and CK, CK# and DQS, DQS# use their crossing points). The minimum
slew rate for the input signals used to test the device is 1 V/ns for single-ended inputs
(DQs are at 2V/ns for DDR3-1866 and DDR3-2133) and 2 V/ns for differential inputs in
the range between VIL(AC) and VIH(AC).
All timings that use time-based values (ns, s, ms) should use tCK (AVG) to determine the
correct number of clocks (Table 57 (page 88) uses CK or tCK [AVG] interchangeably). In
the case of noninteger results, all minimum limits are to be rounded up to the nearest
whole integer, and all maximum limits are to be rounded down to the nearest whole
integer.
Strobe or DQSdiff refers to the DQS and DQS# differential crossing point when DQS is
the rising edge. Clock or CK refers to the CK and CK# differential crossing point when
CK is the rising edge.
This output load is used for all AC timing (except ODT reference timing) and slew rates.
The actual test load may be different. The output signal voltage reference point is
VDDQ/2 for single-ended signals and the crossing point for differential signals (see Figure
29 (page 70)).
When operating in DLL disable mode, Micron does not warrant compliance with normal
mode timings or functionality.
The clocks tCK (AVG) is the average clock over any 200 consecutive clocks and tCK (AVG)
MIN is the smallest clock rate allowed, with the exception of a deviation due to clock
jitter. Input clock jitter is allowed provided it does not exceed values specified and must
be of a random Gaussian distribution in nature.
Spread spectrum is not included in the jitter specification values. However, the input
clock can accommodate spread-spectrum at a sweep rate in the range of 2060 kHz with
an additional 1% of tCK (AVG) as a long-term jitter component; however, the spread
spectrum may not use a clock rate below tCK (AVG) MIN.
The clocks tCH (AVG) and tCL (AVG) are the average half clock period over any 200 consecutive clocks and is the smallest clock half period allowed, with the exception of a deviation due to clock jitter. Input clock jitter is allowed provided it does not exceed values
specified and must be of a random Gaussian distribution in nature.
The period jitter (tJITper) is the maximum deviation in the clock period from the average
or nominal clock. It is allowed in either the positive or negative direction.
tCH (ABS) is the absolute instantaneous clock high pulse width as measured from one
rising edge to the following falling edge.
tCL (ABS) is the absolute instantaneous clock low pulse width as measured from one falling edge to the following rising edge.
The cycle-to-cycle jitter tJITcc is the amount the clock period can deviate from one cycle
to the next. It is important to keep cycle-to-cycle jitter at a minimum during the DLL
locking time.
The cumulative jitter error tERRnper, where n is the number of clocks between 2 and 50,
is the amount of clock time allowed to accumulate consecutively away from the average
clock over n number of clock cycles.
tDS (base) and tDH (base) values are for a single-ended 1 V/ns slew rate DQs (DQs are at
2V/ns for DDR3-1866 and DDR3-2133) and 2 V/ns slew rate differential DQS, DQS#; when
DQ single-ended slew rate is 2V/ns, the DQS differential slew rate is 4V/ns.
95

19. These parameters are measured from a data signal (DM, DQ0, DQ1, and so forth) transition edge to its respective data strobe signal (DQS, DQS#) crossing.
20. The setup and hold times are listed converting the base specification values (to which
derating tables apply) to VREF when the slew rate is 1 V/ns (DQs are at 2V/ns for
DDR3-1866 and DDR3-2133). These values, with a slew rate of 1 V/ns (DQs are at 2V/ns
for DDR3-1866 and DDR3-2133), are for reference only.
21. When the device is operated with input clock jitter, this parameter needs to be derated
by the actual tJITper (larger of tJITper (MIN) or tJITper (MAX) of the input clock (output
deratings are relative to the SDRAM input clock).
22. Single-ended signal parameter.
23. The DRAM output timing is aligned to the nominal or average clock. Most output parameters must be derated by the actual jitter error when input clock jitter is present,
even when within specification. This results in each parameter becoming larger. The following parameters are required to be derated by subtracting tERR10per (MAX): tDQSCK
(MIN), tLZDQS (MIN), tLZDQ (MIN), and tAON (MIN). The following parameters are required to be derated by subtracting tERR10per (MIN): tDQSCK (MAX), tHZ (MAX), tLZDQS
(MAX), tLZDQ (MAX), and tAON (MAX). The parameter tRPRE (MIN) is derated by subtracting tJITper (MAX), while tRPRE (MAX) is derated by subtracting tJITper (MIN).
24. The maximum preamble is bound by tLZDQS (MAX).
25. These parameters are measured from a data strobe signal (DQS, DQS#) crossing to its respective clock signal (CK, CK#) crossing. The specification values are not affected by the
amount of clock jitter applied, as these are relative to the clock signal crossing. These
parameters should be met whether clock jitter is present.
26. The tDQSCK (DLL_DIS) parameter begins CL + AL - 1 cycles after the READ command.
27. The maximum postamble is bound by tHZDQS (MAX).
28. Commands requiring a locked DLL are: READ (and RDAP) and synchronous ODT commands. In addition, after any change of latency tXPDLL, timing must be met.
29. tIS (base) and tIH (base) values are for a single-ended 1 V/ns control/command/address
slew rate and 2 V/ns CK, CK# differential slew rate.
30. These parameters are measured from a command/address signal transition edge to its
respective clock (CK, CK#) signal crossing. The specification values are not affected by
the amount of clock jitter applied as the setup and hold times are relative to the clock
signal crossing that latches the command/address. These parameters should be met
whether clock jitter is present.
31. For these parameters, the DDR3L SDRAM device supports tnPARAM (nCK) = RU(tPARAM
[ns]/tCK[AVG] [ns]), assuming all input clock jitter specifications are satisfied. For example, the device will support tnRP (nCK) = RU(tRP/tCK[AVG]) if all input clock jitter specifications are met. This means that for DDR3-800 6-6-6, of which tRP = 5ns, the device will
support tnRP = RU(tRP/tCK[AVG]) = 6 as long as the input clock jitter specifications are
met. That is, the PRECHARGE command at T0 and the ACTIVATE command at T0 + 6 are
valid even if six clocks are less than 15ns due to input clock jitter.
32. During READs and WRITEs with auto precharge, the DDR3 SDRAM will hold off the internal PRECHARGE command until tRAS (MIN) has been satisfied.
33. When operating in DLL disable mode, the greater of 5CK or 15ns is satisfied for tWR.
34. The start of the write recovery time is defined as follows:
For BL8 (fixed by MRS or OTF): Rising clock edge four clock cycles after WL
For BC4 (OTF): Rising clock edge four clock cycles after WL
For BC4 (fixed by MRS): Rising clock edge two clock cycles after WL
35. RESET# should be LOW as soon as power starts to ramp to ensure the outputs are in
High-Z. Until RESET# is LOW, the outputs are at risk of driving and could result in excessive current, depending on bus activity.
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96

36. The refresh period is 64ms when TC is less than or equal to 85C. This equates to an average refresh rate of 7.8125s. However, nine REFRESH commands should be asserted at
least once every 70.3s. When TC is greater than 85C, the refresh period is 32ms.
37. Although CKE is allowed to be registered LOW after a REFRESH command when
tREFPDEN (MIN) is satisfied, there are cases where additional time such as tXPDLL (MIN)
is required.
38. ODT turn-on time MIN is when the device leaves High-Z and ODT resistance begins to
turn on. ODT turn-on time maximum is when the ODT resistance is fully on. The ODT
reference load is shown in Figure 22 (page 58). This output load is used for ODT timings
(see Figure 29 (page 70)).Designs that were created prior to JEDEC tightening the maximum limit from 9ns to 8.5ns will be allowed to have a 9ns maximum.
39. Half-clock output parameters must be derated by the actual tERR10per and tJITdty when
input clock jitter is present. This results in each parameter becoming larger. The parameters tADC (MIN) and tAOF (MIN) are each required to be derated by subtracting both
tERR10per (MAX) and tJITdty (MAX). The parameters tADC (MAX) and tAOF (MAX) are
required to be derated by subtracting both tERR10per (MAX) and tJITdty (MAX).
40. ODT turn-off time minimum is when the device starts to turn off ODT resistance. ODT
turn-off time maximum is when the DRAM buffer is in High-Z. The ODT reference load is
shown in Figure 22 (page 58). This output load is used for ODT timings (see Figure 29
(page 70)).
41. Pulse width of a input signal is defined as the width between the first crossing of
VREF(DC) and the consecutive crossing of VREF(DC).
42. Should the clock rate be larger than tRFC (MIN), an AUTO REFRESH command should
have at least one NOP command between it and another AUTO REFRESH command. Additionally, if the clock rate is slower than 40ns (25 MHz), all REFRESH commands should
be followed by a PRECHARGE ALL command.
43. DRAM devices should be evenly addressed when being accessed. Disproportionate accesses to a particular row address may result in a reduction of REFRESH characteristics or
product lifetime.
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97

Command and Address Setup, Hold, and Derating

The total tIS (setup time) and tIH (hold time) required is calculated by adding the data
sheet tIS (base) and tIH (base) values (see Table 58; values come from the Electrical
Characteristics and AC Operating Conditions table) to the tIS and tIH derating values
(see Table 59 (page 99), Table 60 (page 99) or Table 61 (page 99)) respectively. Example: tIS (total setup time) = tIS (base) + tIS. For a valid transition, the input signal
has to remain above/below V IH(AC)/VIL(AC) for some time tVAC (see Table 62 (page 100)).
Although the total setup time for slow slew rates might be negative (for example, a valid
input signal will not have reached V IH(AC)/VIL(AC) at the time of the rising clock transition), a valid input signal is still required to complete the transition and to reach
VIH(AC)/VIL(AC) (see Figure 13 (page 48) for input signal requirements). For slew rates that
fall between the values listed in Table 59 (page 99) and Table 61 (page 99), the derating values may be obtained by linear interpolation.
Setup (tIS) nominal slew rate for a rising signal is defined as the slew rate between the
last crossing of V REF(DC) and the first crossing of V IH(AC)min. Setup (tIS) nominal slew rate
for a falling signal is defined as the slew rate between the last crossing of V REF(DC) and
the first crossing of V IL(AC)max. If the actual signal is always earlier than the nominal slew
rate line between the shaded V REF(DC)-to-AC region, use the nominal slew rate for derating value (see Figure 32 (page 101)). If the actual signal is later than the nominal slew
rate line anywhere between the shaded V REF(DC)-to-AC region, the slew rate of a tangent
line to the actual signal from the AC level to the DC level is used for derating value (see
Figure 34 (page 103)).
Hold (tIH) nominal slew rate for a rising signal is defined as the slew rate between the
last crossing of V IL(DC)max and the first crossing of V REF(DC). Hold (tIH) nominal slew rate
for a falling signal is defined as the slew rate between the last crossing of V IH(DC)min and
the first crossing of V REF(DC). If the actual signal is always later than the nominal slew
rate line between the shaded DC-to-VREF(DC) region, use the nominal slew rate for derating value (see Figure 33 (page 102)). If the actual signal is earlier than the nominal slew
rate line anywhere between the shaded DC-to-VREF(DC) region, the slew rate of a tangent
line to the actual signal from the DC level to the V REF(DC) level is used for derating value
(see Figure 35 (page 104)).
Table 58: DDR3L Command and Address Setup and Hold Values 1 V/ns Referenced AC/DC-Based
Symbol
tIS(base,
800
1066
1333
1600
1866
2133
Unit
Reference
ps
VIH(AC)/VIL(AC)
AC160)
215
140
80
60
tIS(base,
AC135)
365
290
205
185
65
60
ps
VIH(AC)/VIL(AC)
tIS(base,
AC125)
150
135
ps
VIH(AC)/VIL(AC)
285
210
150
130
110
105
ps
VIH(DC)/VIL(DC)
tIH(base,
DC90)
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Table 59: DDR3L-800/1066 Derating Values tIS/tIH AC160/DC90-Based
tIS, tIH Derating (ps) AC/DC-Based
CMD/ADDR
4.0 V/ns
Slew Rate
V/ns
tIS tIH
CK, CK# Differential Slew Rate

3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
tIS
tIH
tIS
tIH
tIS
tIH
tIS
tIH
tIS
tIH
tIS
tIH
tIS
tIH
2.0
80
45
80
45
80
45
88
53
96
61
104
69
112
79
120
95
1.5
53
30
53
30
53
30
61
38
69
46
77
54
85
64
93
80
1.0
16
16
24
24
32
34
40
50
0.9
15
13
23
21
31
31
39
47
0.8
13
21
17
29
27
37
43
0.7
13
13
13
11
19
11
27
21
35
37
0.6
20
20
20
12
16
24
14
32
30
0.5
20
30
20
30
20
30
12
22
14
12
20
20
0.4
40
45
40
45
40
45
32
37
24
29
16
21
11
Table 60: DDR3L-800/1066/1333/1600 Derating Values for tIS/tIH AC135/DC90-Based

CMD/ADDR
4.0 V/ns
Slew Rate
V/ns
tIS tIH

3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
tIS
tIH
tIS
tIH
tIS
tIH
tIS
tIH
tIS
tIH
tIS
tIH
tIS
tIH
2.0
68
45
68
45
68
45
76
53
84
61
92
69
100
79
108
95
1.5
45
30
45
30
45
30
53
38
61
46
69
54
77
64
85
80
1.0
16
16
24
24
32
34
40
50
0.9
10
18
13
26
21
34
31
42
47
0.8
11
19
27
17
35
27
43
43
0.7
13
13
13
14
22
30
11
38
21
46
37
0.6
20
20
20
17
12
25
33
41
14
49
30
0.5
30
30
30
13
22
21
14
29
37
45
20
0.4
45
45
45
37
14
29
22
21
30
11
38
Table 61: DDR3L-1866/2133 Derating Values for tIS/tIH AC125/DC90-Based

CMD/ADDR
4.0 V/ns
Slew Rate
V/ns
tIS tIH

3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
tIS
tIH
tIS
tIH
tIS
tIH
tIS
tIH
tIS
tIH
tIS
tIH
tIS
tIH
2.0
63
45
63
45
63
45
71
53
79
61
87
69
95
79
103
95
1.5
42
30
42
30
42
30
50
38
58
46
66
54
74
64
82
80
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99

Table 61: DDR3L-1866/2133 Derating Values for tIS/tIH AC125/DC90-Based (Continued)
CMD/ADDR
4.0 V/ns
Slew Rate
V/ns
tIS tIH

3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
tIS
tIH
tIS
tIH
tIS
tIH
tIS
tIH
tIS
tIH
tIS
tIH
tIS
tIH
1.0
16
16
24
24
32
34
40
50
0.9
11
19
13
27
21
35
31
43
47
0.8
14
22
30
17
38
27
46
43
0.7
10
13
10
13
10
13
18
26
34
11
42
21
50
37
0.6
16
20
16
20
16
20
24
12
32
40
48
14
56
30
0.5
15
30
15
30
15
30
23
22
31
14
39
47
55
20
0.4
13
45
13
45
13
45
21
37
29
29
37
21
45
11
53
Table 62: DDR3L Minimum Required Time tVAC Above VIH(AC) (Below VIL[AC]) for Valid ADD/CMD
Transition
DDR3L-800/1066/1333/1600
Slew Rate (V/ns)
tVAC
at 160mV (ps)
tVAC
DDR3L-1866/2133
at 135mV (ps)
tVAC
at 135mV (ps) tVAC at 125mV (ps)
>2.0
200
213
200
205
2.0
200
213
200
205
1.5
173
190
178
184
1.0
120
145
133
143
0.9
102
130
118
129
0.8
80
111
99
111
0.7
51
87
75
89
0.6
13
55
43
59
0.5
Note 1
10
Note 1
18
<0.5
Note 1
10
Note 1
18
Note:
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100

Figure 32: Nominal Slew Rate and tVAC for tIS (Command and Address Clock)
tIS
tIS
tIH
tIH
CK
CK#
DQS#
DQS
VDDQ
tVAC
VIH(AC)min
VREF to AC
region
VIH(DC)min
Nominal
slew rate
VREF(DC)
Nominal
slew rate
VIL(DC)max
VREF to AC
region
VIL(DC)max
tVAC
VSS
TF
Setup slew rate
falling signal =
Note:
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TR
VREF(DC) - VIL(AC)max
Setup slew rate

rising signal =
TF
VIH(AC)min - VREF(DC)
TR
1. The clock and the strobe are drawn on different time scales.
101

Figure 33: Nominal Slew Rate for tIH (Command and Address Clock)
tIS
tIS
tIH
tIH
CK
CK#
DQS#
DQS
VDDQ
VIH(AC)min
VIH(DC)min
Nominal
slew rate
DC to VREF
region
VREF(DC)
Nominal
slew rate
DC to VREF
region
VIL(DC)max
VIL(AC)max
VSS
TF
TR
VREF(DC) - VIL(DC)max
Hold slew rate
rising signal =
TR
Note:
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VIH(DC)min - VREF(DC)
Hold slew rate
falling signal =
TF
102

Figure 34: Tangent Line for tIS (Command and Address Clock)
tIS
tIS
tIH
tIH
CK
CK#
DQS#
DQS
VDDQ
Nominal
line
tVAC
VIH(AC)min
VREF to AC
region
VIH(DC)min
Tangent
line
VREF(DC)
Tangent
line
VIL(DC)max
VREF to AC
region
VIL(DC)max
Nominal
line
tVAC
VSS
TR
Tangent line (VIH(DC)min - VREF(DC))
Setup slew rate
rising signal =
TR
TF
Note:
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Tangent line (VREF(DC) - VIL(AC)max)

Setup slew rate
falling signal =
TF
103

Figure 35: Tangent Line for tIH (Command and Address Clock)
tIS
tIH
tIS
tIH
CK
CK#
DQS#
DQS
VDDQ
VIH(AC)min
Nominal
line
VIH(DC)min
DC to VREF
region
Tangen t
line
VREF(DC)
DC to VREF
region
Tangen t
line
Nominal
line
VIL( DC)max
VIL( AC)max
VSS
TR
TR
Tangent line (VREF(DC) - VIL(DC)max)

Hold slew rate
rising signal =
TR
Hold slew rate
falling signal =
TF
Note:
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104

Data Setup, Hold, and Derating

The total tDS (setup time) and tDH (hold time) required is calculated by adding the data
sheet tDS (base) and tDH (base) values (see Table 63 (page 105); values come from the
Electrical Characteristics and AC Operating Conditions table) to the tDS and tDH derating values (see Table 64 (page 106), Table 65 (page 106), or Table 66 (page 107)) respectively. Example: tDS (total setup time) = tDS (base) + tDS. For a valid transition, the
input signal has to remain above/below V IH(AC)/VIL(AC) for some time tVAC (see Table 67
(page 108)).
Although the total setup time for slow slew rates might be negative (for example, a valid
input signal will not have reached V IH(AC)/VIL(AC)) at the time of the rising clock transition), a valid input signal is still required to complete the transition and to reach
VIH/VIL(AC). For slew rates that fall between the values listed in Table 64 (page 106), Table 65 (page 106), or Table 66 (page 107), the derating values may obtained by linear
interpolation.
Setup (tDS) nominal slew rate for a rising signal is defined as the slew rate between the
last crossing of V REF(DC) and the first crossing of V IH(AC)min. Setup (tDS) nominal slew
rate for a falling signal is defined as the slew rate between the last crossing of V REF(DC)
and the first crossing of V IL(AC)max. If the actual signal is always earlier than the nominal
slew rate line between the shaded V REF(DC)-to-AC region, use the nominal slew rate for
derating value (see Figure 36 (page 109)). If the actual signal is later than the nominal
slew rate line anywhere between the shaded V REF(DC)-to-AC region, the slew rate of a
tangent line to the actual signal from the AC level to the DC level is used for derating
value (see Figure 38 (page 111)).
Hold (tDH) nominal slew rate for a rising signal is defined as the slew rate between the
last crossing of V IL(DC)max and the first crossing of V REF(DC). Hold (tDH) nominal slew
rate for a falling signal is defined as the slew rate between the last crossing of V IH(DC)min
and the first crossing of V REF(DC). If the actual signal is always later than the nominal
slew rate line between the shaded DC-to-VREF(DC) region, use the nominal slew rate for
derating value (see Figure 37 (page 110)). If the actual signal is earlier than the nominal
slew rate line anywhere between the shaded DC-to-VREF(DC) region, the slew rate of a
tangent line to the actual signal from the DC-to-VREF(DC) region is used for derating value (see Figure 39 (page 112)).
Table 63: DDR3L Data Setup and Hold Values at 1 V/ns (DQS, DQS# at 2 V/ns) AC/DC-Based
Symbol
tDS
tDS
tDS
800
1066
1333
1600
1866
2133
Unit
Reference
(base) AC160
90
40
ps
VIH(AC)/VIL(AC)
(base) AC135
140
90
45
25
ps
(base) AC130
70
55
ps
tDH
(base) DC90
160
110
75
55
ps
tDH
(base) DC90
75
60
ps
V/ns
Slew Rate Referenced
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105

Table 64: DDR3L Derating Values for tDS/tDH AC160/DC90-Based
tDS, tDH Derating (ps) AC/DC-Based
DQS, DQS# Differential Slew Rate
4.0 V/ns
3.0 V/ns
2.0 V/ns
DQ Slew
Rate V/ns
tDS
tDH
tDS
tDH
tDS
tDH
2.0
80
45
80
45
80
45
1.5
53
30
53
30
53
1.0
0.9
0.8
1.8 V/ns
tDS
tDH
30
61
38
0.7
1.6 V/ns
tDS
tDH
16
16
15
0.6
1.4 V/ns
tDS
tDH
13
23
21
13
21
11
0.5
1.2 V/ns
tDS
tDH
17
29
27
19
11
27
16
24
0.4
1.0 V/ns
tDS
tDH
21
35
37
14
32
30
12
20
20
11
Table 65: DDR3L Derating Values for tDS/tDH AC135/DC90-Based

DQ Slew
Rate V/ns
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH
2.0
68
45
68
45
68
45
1.5
45
30
45
30
45
30
53
38
1.0
16
16
10
18
13
26
21
11
19
27
17
35
27
14
22
30
11
38
21
46
37
25
33
41
14
49
30
39
37
45
20
30
11
38
0.9
0.8
0.7
0.6
0.5
0.4
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106
Shaded cells indicate slew rate combinations not supported

DQ Slew Rate V/ns
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Table 66: DDR3L Derating Values for tDS/tDH AC130/DC90-Based at 2V/ns

8.0 V/ns
7.0 V/ns
6.0 V/ns
5.0 V/ns
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
tDH
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
4.0
33
23
33
23
33
23
3.5
28
19
28
19
28
19
28
19
3.0
22
15
22
15
22
15
22
15
22
15
13
13
13
13
13
22
15
22
15
22
15
22
15
14
65
45
65
45
65
45
57
37
49
29
62
48
62
48
54
40
46
32
38
24
61
53
53
45
45
37
37
29
29
19
49
50
41
-42
33
34
25
24
17
37
-49
29
41
21
31
13
15
31
51
23
41
15
25
28
56
20
40
2.5
2.0
1.5
1.0
107
0.9
0.8
0.7
0.6
0.5
0.4

tDS

Table 67: DDR3L Minimum Required Time tVAC Above VIH(AC) (Below VIL(AC)) for Valid DQ Transition
Slew Rate (V/ns)
DDR3L-800/1066 160mV
(ps) min
DDR3L-800/1066/1333
135mV (ps) min
DDR3L-1866/2133
130mV (ps) min
>2.0
165
113
95
2.0
165
113
95
1.5
138
90
73
1.0
85
45
30
0.9
67
30
16
0.8
45
11
Note 1
0.7
16
Note 1
0.6
Note 1
Note 1
0.5
Note 1
Note 1
<0.5
Note 1
Note 1
Note:
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108

Figure 36: Nominal Slew Rate and tVAC for tDS (DQ Strobe)
CK
CK#
DQS#
DQS
tDS
tDH
tDS
tDH
VDDQ
tVAC
VIH(AC)min
VREF to AC
region
VIH(DC)min
Nominal
slew rate
VREF(DC)
Nominal
slew rate
VIL(DC)max
VREF to AC
region
VIL(AC)max
tVAC
VSS
TF
Setup slew rate
=
falling signal
Note:
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TR
VREF(DC) - VIL(AC)max
VIH(AC)min - VREF(DC)
Setup slew rate
=
rising signal
TR
TF
109

Figure 37: Nominal Slew Rate for tDH (DQ Strobe)
CK
CK#
DQS#
DQS
tDS
tDH
tDS
tDH
VDDQ
VIH(AC)min
VIH(DC)min
Nominal
slew rate
DC to VREF
region
VREF(DC)
Nominal
slew rate
DC to VREF
region
VIL(DC)max
VIL(AC)max
VSS
TR
VIL(DC)min - VREF(DC)
Hold slew rate
falling signal =
TF
VREF(DC) - VIL(DC)max
Hold slew rate
rising signal =
TR
Note:
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TF
110

Figure 38: Tangent Line for tDS (DQ Strobe)
CK
CK#
DQS#
DQS
tDS
tDH
tDS
tDH
VDDQ
Nominal
line
tVAC
VIH(AC)min
VREF to AC
region
VIH(DC)min
Tangent
line
VREF(DC)
Tangent
line
VIL(DC)max
VREF to AC
region
VIL(AC)max
Nominal
line
TR
tVAC
VSS
Setup slew rate

Tangent line (VIH(AC)min - VREF(DC))
rising signal =
TR
TF
Note:
PDF: 09005aef85993e22
Setup slew rate

Tangent line (VREF(DC) - VIL(AC)max)
falling signal =
TF
111

Figure 39: Tangent Line for tDH (DQ Strobe)
CK
CK#
DQS#
DQS
tDS
tDH
tDS
tDH
VDDQ
VIH(AC)min
Nominal
line
VIH(DC)min
DC to VREF
region
Tangent
line
VREF(DC)
DC to VREF
region
Tangent
line
Nominal
line
VIL(DC)max
VIL(AC)max
VSS
TR
Note:
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TF
Hold slew rate

rising signal =
Tangent line (VREF(DC) - VIL(DC)max)
Hold slew rate

falling signal =
TR
TF
112

Commands Truth Tables

Table 68: Truth Table Command
CKE
Symbol
Prev.
Cycle
MODE REGISTER SET
MRS
BA
REFRESH
REF
Self refresh entry
SRE
Self refresh exit
SRX
6, 7
H
V
Function
Single-bank PRECHARGE
Next
BA
Cycle CS# RAS# CAS# WE# [2:0]
An
A12
A10
A[11,
9:0] Notes
OP code
PRE
BA
PRECHARGE all banks
PREA
Bank ACTIVATE
ACT
BA
WRITE
BL8MRS,
BC4MRS
WR
BA
RFU
CA
BC4OTF
WRS4
BA
RFU
CA
BL8OTF
WRS8
BA
RFU
CA
BL8MRS,
BC4MRS
WRAP
BA
RFU
CA
BC4OTF
WRAPS4
BA
RFU
CA
BL8OTF
WRAPS8
BA
RFU
CA
BL8MRS,
BC4MRS
RD
BA
RFU
CA
BC4OTF
RDS4
BA
RFU
CA
BL8OTF
RDS8
BA
RFU
CA
BL8MRS,
BC4MRS
RDAP
BA
RFU
CA
BC4OTF
RDAPS4
BA
RFU
CA
BL8OTF
BA
RFU
CA
WRITE
with auto
precharge
READ
READ
with auto
precharge
Row address (RA)
RDAPS8
NO OPERATION
NOP
Device DESELECTED
DES
10
Power-down entry
PDE
Power-down exit
PDX
6, 11
12
ZQ CALIBRATION LONG
ZQCL
ZQ CALIBRATION SHORT
ZQCS
Notes:
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1. Commands are defined by the states of CS#, RAS#, CAS#, WE#, and CKE at the rising
edge of the clock. The MSB of BA, RA, and CA are device-, density-, and configurationdependent.
113

2. RESET# is enabled LOW and used only for asynchronous reset. Thus, RESET# must be
held HIGH during any normal operation.
3. The state of ODT does not affect the states described in this table.
4. Operations apply to the bank defined by the bank address. For MRS, BA selects one of
four mode registers.
5. V means H or L (a defined logic level), and X means Dont Care.
6. See Table 69 (page 115) for additional information on CKE transition.
7. Self refresh exit is asynchronous.
8. Burst READs or WRITEs cannot be terminated or interrupted. MRS (fixed) and OTF BL/BC
are defined in MR0.
9. The purpose of the NOP command is to prevent the DRAM from registering any unwanted commands. A NOP will not terminate an operation that is executing.
10. The DES and NOP commands perform similarly.
11. The power-down mode does not perform any REFRESH operations.
12. ZQ CALIBRATION LONG is used for either ZQinit (first ZQCL command during initialization) or ZQoper (ZQCL command after initialization).
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Table 69: Truth Table CKE
Notes 12 apply to the entire table; see Table 68 (page 113) for additional command details
CKE
Current
State3
Previous Cycle4 Present Cycle4

Command5
(n - 1)
(n)
(RAS#, CAS#, WE#, CS#)
Power-down
Action5
Dont Care
Maintain power-down
DES or NOP
Power-down exit
Self refresh
Dont Care
Maintain self refresh
DES or NOP
Self refresh exit
Bank(s) active
DES or NOP
Active power-down entry
Reading
DES or NOP
Power-down entry
Writing
DES or NOP
Power-down entry
Precharging
DES or NOP
Power-down entry
Refreshing
DES or NOP
Precharge power-down entry
All banks idle
DES or NOP
Precharge power-down entry
REFRESH
Self refresh
Notes:
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Notes
1. All states and sequences not shown are illegal or reserved unless explicitly described
elsewhere in this document.
2. tCKE (MIN) means CKE must be registered at multiple consecutive positive clock edges.
CKE must remain at the valid input level the entire time it takes to achieve the required
number of registration clocks. Thus, after any CKE transition, CKE may not transition
from its valid level during the time period of tIS + tCKE (MIN) + tIH.
3. Current state = The state of the DRAM immediately prior to clock edge n.
4. CKE (n) is the logic state of CKE at clock edge n; CKE (n - 1) was the state of CKE at the
previous clock edge.
5. COMMAND is the command registered at the clock edge (must be a legal command as
defined in Table 68 (page 113)). Action is a result of COMMAND. ODT does not affect
the states described in this table and is not listed.
6. Idle state = All banks are closed, no data bursts are in progress, CKE is HIGH, and all timings from previous operations are satisfied. All self refresh exit and power-down exit parameters are also satisfied.
115

Commands
Commands
DESELECT
The DESELT (DES) command (CS# HIGH) prevents new commands from being executed by the DRAM. Operations already in progress are not affected.
NO OPERATION
The NO OPERATION (NOP) command (CS# LOW) prevents unwanted commands from
being registered during idle or wait states. Operations already in progress are not affected.
ZQ CALIBRATION LONG
The ZQ CALIBRATION LONG (ZQCL) command is used to perform the initial calibration during a power-up initialization and reset sequence (see Figure 48 (page 132)).
This command may be issued at any time by the controller, depending on the system
environment. The ZQCL command triggers the calibration engine inside the DRAM. After calibration is achieved, the calibrated values are transferred from the calibration engine to the DRAM I/O, which are reflected as updated RON and ODT values.
The DRAM is allowed a timing window defined by either tZQinit or tZQoper to perform
a full calibration and transfer of values. When ZQCL is issued during the initialization
sequence, the timing parameter tZQinit must be satisfied. When initialization is complete, subsequent ZQCL commands require the timing parameter tZQoper to be satisfied.
ZQ CALIBRATION SHORT
The ZQ CALIBRATION SHORT (ZQCS) command is used to perform periodic calibrations to account for small voltage and temperature variations. A shorter timing window
is provided to perform the reduced calibration and transfer of values as defined by timing parameter tZQCS. A ZQCS command can effectively correct a minimum of 0.5% RON
and RTT impedance error within 64 clock cycles, assuming the maximum sensitivities
specified in DDR3L 34 Ohm Output Driver Sensitivity (page 64).
ACTIVATE
The ACTIVATE command is used to open (or activate) a row in a particular bank for a
subsequent access. The value on the BA[2:0] inputs selects the bank, and the address
provided on inputs A[n:0] selects the row. This row remains open (or active) for accesses
until a PRECHARGE command is issued to that bank.
A PRECHARGE command must be issued before opening a different row in the same
bank.
READ
The READ command is used to initiate a burst read access to an active row. The address
provided on inputs A[2:0] selects the starting column address, depending on the burst
length and burst type selected (see Burst Order table for additional information). The
value on input A10 determines whether auto precharge is used. If auto precharge is selected, the row being accessed will be precharged at the end of the READ burst. If auto
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116

Commands
precharge is not selected, the row will remain open for subsequent accesses. The value
on input A12 (if enabled in the mode register) when the READ command is issued determines whether BC4 (chop) or BL8 is used. After a READ command is issued, the
READ burst may not be interrupted.
Table 70: READ Command Summary
CKE
Function
READ
READ with
auto
precharge
Symbol
Prev.
Cycle
Next
BA
An
A12
A10
A[11,
9:0]
BL8MRS,
BC4MRS
RD
BA
RFU
CA
BC4OTF
RDS4
BA
RFU
CA
BL8OTF
RDS8
BA
RFU
CA
BL8MRS,
BC4MRS
RDAP
BA
RFU
CA
BC4OTF
RDAPS4
BA
RFU
CA
BL8OTF
RDAPS8
BA
RFU
CA
WRITE
The WRITE command is used to initiate a burst write access to an active row. The value
on the BA[2:0] inputs selects the bank. The value on input A10 determines whether auto
precharge is used. The value on input A12 (if enabled in the MR) when the WRITE command is issued determines whether BC4 (chop) or BL8 is used.
Input data appearing on the DQ is written to the memory array subject to the DM input
logic level appearing coincident with the data. If a given DM signal is registered LOW,
the corresponding data will be written to memory. If the DM signal is registered HIGH,
the corresponding data inputs will be ignored and a WRITE will not be executed to that
byte/column location.
Table 71: WRITE Command Summary
CKE
Function
WRITE
WRITE with
auto
precharge
Symbol
Prev.
Cycle
Next
BA
An
A12
A10
A[11,
9:0]
BL8MRS,
BC4MRS
WR
BA
RFU
CA
BC4OTF
WRS4
BA
RFU
CA
BL8OTF
WRS8
BA
RFU
CA
BL8MRS,
BC4MRS
WRAP
BA
RFU
CA
BC4OTF
WRAPS4
BA
RFU
CA
BL8OTF
WRAPS8
BA
RFU
CA
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Commands
PRECHARGE
The PRECHARGE command is used to de-activate the open row in a particular bank or
in all banks. The bank(s) are available for a subsequent row access a specified time ( tRP)
after the PRECHARGE command is issued, except in the case of concurrent auto precharge. A READ or WRITE command to a different bank is allowed during a concurrent
auto precharge as long as it does not interrupt the data transfer in the current bank and
does not violate any other timing parameters. Input A10 determines whether one or all
banks are precharged. In the case where only one bank is precharged, inputs BA[2:0] select the bank; otherwise, BA[2:0] are treated as Dont Care.
After a bank is precharged, it is in the idle state and must be activated prior to any READ
or WRITE commands being issued to that bank. A PRECHARGE command is treated as
a NOP if there is no open row in that bank (idle state) or if the previously open row is
already in the process of precharging. However, the precharge period is determined by
the last PRECHARGE command issued to the bank.
REFRESH
The REFRESH command is used during normal operation of the DRAM and is analogous to CAS#-before-RAS# (CBR) refresh or auto refresh. This command is nonpersistent, so it must be issued each time a refresh is required. The addressing is generated by
the internal refresh controller. This makes the address bits a Dont Care during a REFRESH command. The DRAM requires REFRESH cycles at an average interval of 7.8s
(maximum when T C 85C or 3.9s maximum when T C 95C). The REFRESH period
begins when the REFRESH command is registered and ends tRFC (MIN) later.
To allow for improved efficiency in scheduling and switching between tasks, some flexibility in the absolute refresh interval is provided. A maximum of eight REFRESH commands can be posted to any given DRAM, meaning that the maximum absolute interval
between any REFRESH command and the next REFRESH command is nine times the
maximum average interval refresh rate. Self refresh may be entered with up to eight REFRESH commands being posted. After exiting self refresh (when entered with posted
REFRESH commands), additional posting of REFRESH commands is allowed to the extent that the maximum number of cumulative posted REFRESH commands (both preand post-self refresh) does not exceed eight REFRESH commands.
At any given time, a maximum of 16 REFRESH commands can be issued within
2 x tREFI.
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Commands
Figure 40: Refresh Mode
T0
T2
T1
CK#
CK
tCK
T3
tCH
T4
Ta1
Valid 5
NOP1
PRE
Tb0
Tb1
Valid 5
Valid 5
NOP5
NOP5
Tb2
tCL
CKE
Command
Ta0
NOP1
NOP1
REF
NOP5
REF2
Address
ACT
RA
All banks
A10
RA
One bank
BA[2:0]
Bank(s)3
BA
DQS, DQS#4
DQ4
DM4
tRP
tRFC
(MIN)
tRFC2
Indicates break
in time scale
Notes:
Dont Care
1. NOP commands are shown for ease of illustration; other valid commands may be possible at these times. CKE must be active during the PRECHARGE, ACTIVATE, and REFRESH
commands, but may be inactive at other times (see Power-Down Mode (page 182)).
2. The second REFRESH is not required, but two back-to-back REFRESH commands are
shown.
3. Dont Care if A10 is HIGH at this point; however, A10 must be HIGH if more than one
bank is active (must precharge all active banks).
4. For operations shown, DM, DQ, and DQS signals are all Dont Care/High-Z.
5. Only NOP and DES commands are allowed after a REFRESH command and until tRFC
(MIN) is satisfied.
SELF REFRESH
The SELF REFRESH command is used to retain data in the DRAM, even if the rest of the
system is powered down. When in self refresh mode, the DRAM retains data without external clocking. Self refresh mode is also a convenient method used to enable/disable
the DLL as well as to change the clock frequency within the allowed synchronous operating range (see Input Clock Frequency Change (page 124)). All power supply inputs
(including V REFCA and V REFDQ) must be maintained at valid levels upon entry/exit and
during self refresh mode operation. V REFDQ may float or not drive V DDQ/2 while in self
refresh mode under the following conditions:
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VSS < V REFDQ < V DD is maintained

VREFDQ is valid and stable prior to CKE going back HIGH
The first WRITE operation may not occur earlier than 512 clocks after V REFDQ is valid
All other self refresh mode exit timing requirements are met
119

Commands
DLL Disable Mode
If the DLL is disabled by the mode register (MR1[0] can be switched during initialization
or later), the DRAM is targeted, but not guaranteed, to operate similarly to the normal
mode, with a few notable exceptions:
The DRAM supports only one value of CAS latency (CL = 6) and one value of CAS
WRITE latency (CWL = 6).
DLL disable mode affects the read data clock-to-data strobe relationship (tDQSCK),
but not the read data-to-data strobe relationship (tDQSQ, tQH). Special attention is
required to line up the read data with the controller time domain when the DLL is disabled.
In normal operation (DLL on), tDQSCK starts from the rising clock edge AL + CL
cycles after the READ command. In DLL disable mode, tDQSCK starts AL + CL - 1 cycles after the READ command. Additionally, with the DLL disabled, the value of
tDQSCK could be larger than tCK.
The ODT feature (including dynamic ODT) is not supported during DLL disable mode.
The ODT resistors must be disabled by continuously registering the ODT ball LOW by
programming RTT,nom MR1[9, 6, 2] and RTT(WR) MR2[10, 9] to 0 while in the DLL disable
mode.
Specific steps must be followed to switch between the DLL enable and DLL disable
modes due to a gap in the allowed clock rates between the two modes (tCK [AVG] MAX
and tCK [DLL_DIS] MIN, respectively). The only time the clock is allowed to cross this
clock rate gap is during self refresh mode. Thus, the required procedure for switching
from the DLL enable mode to the DLL disable mode is to change frequency during self
refresh:
1. Starting from the idle state (all banks are precharged, all timings are fulfilled, ODT
is turned off, and RTT,nom and RTT(WR) are High-Z), set MR1[0] to 1 to disable the
DLL.
2. Enter self refresh mode after tMOD has been satisfied.
3. After tCKSRE is satisfied, change the frequency to the desired clock rate.
4. Self refresh may be exited when the clock is stable with the new frequency for
tCKSRX. After tXS is satisfied, update the mode registers with appropriate values.
5. The DRAM will be ready for its next command in the DLL disable mode after the
greater of tMRD or tMOD has been satisfied. A ZQCL command should be issued
with appropriate timings met.
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120

Commands
Figure 41: DLL Enable Mode to DLL Disable Mode
T0
CK#
CK
T1
Ta0
Ta1
Tb0
Tc0
Td0
Td1
Te0
Te1
Tf0
Valid1
CKE
Command
MRS2
6
SRE3
NOP
SRX4
NOP
7
tCKSRE
tMOD
tCKSRX8
NOP
tXS
MRS5
NOP
Valid1
tMOD
tCKESR
ODT9
Valid1
Indicates break
in time scale
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
Dont Care
Any valid command.

Disable DLL by setting MR1[0] to 1.
Enter SELF REFRESH.
Exit SELF REFRESH.
Update the mode registers with the DLL disable parameters setting.
Starting with the idle state, RTT is in the High-Z state.
Change frequency.
Clock must be stable tCKSRX.
Static LOW in the case that RTT,nom or RTT(WR) is enabled; otherwise, static LOW or HIGH.
A similar procedure is required for switching from the DLL disable mode back to the
DLL enable mode. This also requires changing the frequency during self refresh mode
1. Starting from the idle state (all banks are precharged, all timings are fulfilled, ODT
is turned off, and RTT,nom and RTT(WR) are High-Z), enter self refresh mode.
2. After tCKSRE is satisfied, change the frequency to the new clock rate.
3. Self refresh may be exited when the clock is stable with the new frequency for
tCKSRX. After tXS is satisfied, update the mode registers with the appropriate values. At a minimum, set MR1[0] to 0 to enable the DLL. Wait tMRD, then set MR0[8]
to 1 to enable DLL RESET.
4. After another tMRD delay is satisfied, update the remaining mode registers with
the appropriate values.
5. The DRAM will be ready for its next command in the DLL enable mode after the
greater of tMRD or tMOD has been satisfied. However, before applying any command or function requiring a locked DLL, a delay of tDLLK after DLL RESET must
be satisfied. A ZQCL command should be issued with the appropriate timings
met.
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121

Commands
Figure 42: DLL Disable Mode to DLL Enable Mode
T0
CK#
CK
Ta0
Ta1
Tb0
Tc0
Tc1
Td0
Te0
Tf0
Tg0
CKE
Th0
Valid
tDLLK
Command
SRE1
NOP
SRX2
NOP
tCKSRE
tCKSRX9
MRS3
tXS
MRS4
tMRD
MRS5
Valid 6
tMRD
ODTLoff + 1 tCK
tCKESR
ODT10
Indicates break
in time scale
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
Dont Care
Enter SELF REFRESH.

Exit SELF REFRESH.
Wait tXS, then set MR1[0] to 0 to enable DLL.
Wait tMRD, then set MR0[8] to 1 to begin DLL RESET.
Wait tMRD, update registers (CL, CWL, and write recovery may be necessary).
Wait tMOD, any valid command.
Starting with the idle state.
Change frequency.
Clock must be stable at least tCKSRX.
Static LOW in the case that RTT,nom or RTT(WR) is enabled; otherwise, static LOW or HIGH.
The clock frequency range for the DLL disable mode is specified by the parameter tCK
(DLL_DIS). Due to latency counter and timing restrictions, only CL = 6 and CWL = 6 are
supported.
DLL disable mode will affect the read data clock to data strobe relationship (tDQSCK)
but not the data strobe to data relationship (tDQSQ, tQH). Special attention is needed to
line up read data to the controller time domain.
Compared to the DLL on mode where tDQSCK starts from the rising clock edge AL + CL
cycles after the READ command, the DLL disable mode tDQSCK starts AL + CL - 1 cycles
after the READ command.
WRITE operations function similarly between the DLL enable and DLL disable modes;
however, ODT functionality is not allowed with DLL disable mode.
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122

Commands
Figure 43: DLL Disable tDQSCK
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
Command
READ
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Address
Valid
CK#
CK
RL = AL + CL = 6 (CL = 6, AL = 0)
CL = 6
DQS, DQS# DLL on
DI
b
DQ BL8 DLL on
RL (DLL_DIS) = AL + (CL - 1) = 5
DI
b+1
DI
b+2
DI
b+3
DI
b+4
DI
b+5
DI
b+6
DI
b+7
tDQSCK (DLL_DIS) MIN
DQS, DQS# DLL off

DI
b
DQ BL8 DLL disable
DI
b+1
tDQSCK
DI
b+2
DI
b+3
DI
b+4
DI
b+5
DI
b+6
DI
b+7
DI
b+3
DI
b+4
DI
b+5
DI
b+6
(DLL_DIS) MAX
DQS, DQS# DLL off

DI
b
DQ BL8 DLL disable
DI
b+1
DI
b+2
DI
b+7
Transitioning Data
Dont Care
Table 72: READ Electrical Characteristics, DLL Disable Mode

Parameter
Access window of DQS from CK, CK#
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Symbol
tDQSCK
123
(DLL_DIS)
Min
Max
Unit
10
ns

Input Clock Frequency Change

When the DDR3 SDRAM is initialized, the clock must be stable during most normal
states of operation. This means that after the clock frequency has been set to the stable
state, the clock period is not allowed to deviate, except for what is allowed by the clock
jitter and spread spectrum clocking (SSC) specifications.
The input clock frequency can be changed from one stable clock rate to another under
two conditions: self refresh mode and precharge power-down mode. It is illegal to
change the clock frequency outside of those two modes. For the self refresh mode condition, when the DDR3 SDRAM has been successfully placed into self refresh mode and
tCKSRE has been satisfied, the state of the clock becomes a Dont Care. When the
clock becomes a Dont Care, changing the clock frequency is permissible if the new
clock frequency is stable prior to tCKSRX. When entering and exiting self refresh mode
for the sole purpose of changing the clock frequency, the self refresh entry and exit
specifications must still be met.
The precharge power-down mode condition is when the DDR3 SDRAM is in precharge
power-down mode (either fast exit mode or slow exit mode). Either ODT must be at a
logic LOW or RTT,nom and RTT(WR) must be disabled via MR1 and MR2. This ensures
RTT,nom and RTT(WR) are in an off state prior to entering precharge power-down mode,
and CKE must be at a logic LOW. A minimum of tCKSRE must occur after CKE goes LOW
before the clock frequency can change. The DDR3 SDRAM input clock frequency is allowed to change only within the minimum and maximum operating frequency specified for the particular speed grade (tCK [AVG] MIN to tCK [AVG] MAX). During the input
clock frequency change, CKE must be held at a stable LOW level. When the input clock
frequency is changed, a stable clock must be provided to the DRAM tCKSRX before precharge power-down may be exited. After precharge power-down is exited and tXP has
been satisfied, the DLL must be reset via the MRS. Depending on the new clock frequency, additional MRS commands may need to be issued. During the DLL lock time,
RTT,nom and RTT(WR) must remain in an off state. After the DLL lock time, the DRAM is
ready to operate with a new clock frequency.
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124

Figure 44: Change Frequency During Precharge Power-Down
Previous clock frequency
T0
T1
T2
New clock frequency

Ta0
Tb0
Tc1
Tc0
Td0
Td1
Te0
Te1
CK#
CK
tCH
tCH
b
tCL
tIS
tCL
b
tCH
b
tCK
b
tCL
b
tCK
b
tCKSRX
tCKSRE
tCKE
tIH
CKE
tIS
tCPDED
Command
tCH
b
tCK
b
tCK
tIH
tCL
b
NOP
NOP
NOP
NOP
NOP
Address
MRS
NOP
Valid
DLL RESET
tAOFPD/tAOF
tXP
Valid
tIH
tIS
ODT
DQS, DQS#
High-Z
DQ
High-Z
DM
tDLLK
Enter precharge
power-down mode
Frequency
change
Exit precharge
power-down mode
Indicates break
in time scale
Notes:
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Dont Care
1. Applicable for both SLOW-EXIT and FAST-EXIT precharge power-down modes.

2. tAOFPD and tAOF must be satisfied and outputs High-Z prior to T1 (see On-Die Termination (ODT) for exact requirements).
3. If the RTT,nom feature was enabled in the mode register prior to entering precharge
power-down mode, the ODT signal must be continuously registered LOW, ensuring RTT
is in an off state. If the RTT,nom feature was disabled in the mode register prior to entering precharge power-down mode, RTT will remain in the off state. The ODT signal can
be registered LOW or HIGH in this case.
125

Write Leveling
Write Leveling
For better signal integrity, DDR3 SDRAM memory modules have adopted fly-by topology for the commands, addresses, control signals, and clocks. Write leveling is a scheme
for the memory controller to adjust or de-skew the DQS strobe (DQS, DQS#) to CK relationship at the DRAM with a simple feedback feature provided by the DRAM. Write leveling is generally used as part of the initialization process, if required. For normal
DRAM operation, this feature must be disabled. This is the only DRAM operation where
the DQS functions as an input (to capture the incoming clock) and the DQ function as
outputs (to report the state of the clock). Note that nonstandard ODT schemes are required.
The memory controller using the write leveling procedure must have adjustable delay
settings on its DQS strobe to align the rising edge of DQS to the clock at the DRAM pins.
This is accomplished when the DRAM asynchronously feeds back the CK status via the
DQ bus and samples with the rising edge of DQS. The controller repeatedly delays the
DQS strobe until a CK transition from 0 to 1 is detected. The DQS delay established by
this procedure helps ensure tDQSS, tDSS, and tDSH specifications in systems that use
fly-by topology by de-skewing the trace length mismatch. A conceptual timing of this
procedure is shown in Figure 45.
Figure 45: Write Leveling Concept
T0
T1
T2
T3
T5
T4
T6
T7
CK#
Source
CK
Differential DQS
CK#
Tn
T0
T1
T2
T3
T4
T5
T6
T4
T5
T6
CK
Destination
Differential DQS
DQ
Destination
CK#
Tn
T0
T1
T2
T3
CK
Push DQS to capture

01 transition
Differential DQS
DQ
Dont Care
When write leveling is enabled, the rising edge of DQS samples CK, and the prime DQ
outputs the sampled CKs status. The prime DQ for a x4 or x8 configuration is DQ0 with
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126

Write Leveling
all other DQ (DQ[7:1]) driving LOW. The prime DQ for a x16 configuration is DQ0 for the
lower byte and DQ8 for the upper byte. It outputs the status of CK sampled by LDQS
and UDQS. All other DQ (DQ[7:1], DQ[15:9]) continue to drive LOW. Two prime DQ on a
x16 enable each byte lane to be leveled independently.
The write leveling mode register interacts with other mode registers to correctly configure the write leveling functionality. Besides using MR1[7] to disable/enable write leveling, MR1[12] must be used to enable/disable the output buffers. The ODT value, burst
length, and so forth need to be selected as well. This interaction is shown in Table 73. It
should also be noted that when the outputs are enabled during write leveling mode, the
DQS buffers are set as inputs, and the DQ are set as outputs. Additionally, during write
leveling mode, only the DQS strobe terminations are activated and deactivated via the
ODT ball. The DQ remain disabled and are not affected by the ODT ball.
Table 73: Write Leveling Matrix
MR1[7]
MR1[12]
MR1[2, 6, 9]
Write
Leveling
Output
Buffers
RTT,nom
Value
Disabled
Enabled
(1)
DRAM
RTT,nom
DRAM
ODT Ball DQS
DQ
See normal operations

Disabled
(1)
Write leveling not enabled
DQS not receiving: not terminated

Prime DQ High-Z: not terminated
Other DQ High-Z: not terminated
Low
Off
20, 30,
40, 60, or
120
High
On
DQS not receiving: terminated by RTT

Prime DQ High-Z: not terminated
Other DQ High-Z: not terminated
n/a
Low
Off
DQS receiving: not terminated

Prime DQ driving CK state: not terminated
Other DQ driving LOW: not terminated
40, 60, or
120
High
On
DQS receiving: terminated by RTT

Prime DQ driving CK state: not terminated
Other DQ driving LOW: not terminated
Notes:
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Case Notes
n/a
Enabled
(0)
Off
DRAM State
1. Expected usage if used during write leveling: Case 1 may be used when DRAM are on a
dual-rank module and on the rank not being leveled or on any rank of a module not
being leveled on a multislot system. Case 2 may be used when DRAM are on any rank of
a module not being leveled on a multislot system. Case 3 is generally not used. Case 4 is
generally used when DRAM are on the rank that is being leveled.
2. Since the DRAM DQS is not being driven (MR1[12] = 1), DQS ignores the input strobe,
and all RTT,nom values are allowed. This simulates a normal standby state to DQS.
3. Since the DRAM DQS is being driven (MR1[12] = 0), DQS captures the input strobe, and
only some RTT,nom values are allowed. This simulates a normal write state to DQS.
127

Write Leveling
Write Leveling Procedure
A memory controller initiates the DRAM write leveling mode by setting MR1[7] to 1, assuming the other programable features (MR0, MR1, MR2, and MR3) are first set and the
DLL is fully reset and locked. The DQ balls enter the write leveling mode going from a
High-Z state to an undefined driving state, so the DQ bus should not be driven. During
write leveling mode, only the NOP or DES commands are allowed. The memory controller should attempt to level only one rank at a time; thus, the outputs of other ranks
should be disabled by setting MR1[12] to 1 in the other ranks. The memory controller
may assert ODT after a tMOD delay, as the DRAM will be ready to process the ODT transition. ODT should be turned on prior to DQS being driven LOW by at least ODTLon
delay (WL - 2 tCK), provided it does not violate the aforementioned tMOD delay requirement.
The memory controller may drive DQS LOW and DQS# HIGH after tWLDQSEN has
been satisfied. The controller may begin to toggle DQS after tWLMRD (one DQS toggle
is DQS transitioning from a LOW state to a HIGH state with DQS# transitioning from a
HIGH state to a LOW state, then both transition back to their original states). At a minimum, ODTLon and tAON must be satisfied at least one clock prior to DQS toggling.
After tWLMRD and a DQS LOW preamble (tWPRE) have been satisfied, the memory
controller may provide either a single DQS toggle or multiple DQS toggles to sample CK
for a given DQS-to-CK skew. Each DQS toggle must not violate tDQSL (MIN) and tDQSH
(MIN) specifications. tDQSL (MAX) and tDQSH (MAX) specifications are not applicable
during write leveling mode. The DQS must be able to distinguish the CKs rising edge
within tWLS and tWLH. The prime DQ will output the CKs status asynchronously from
the associated DQS rising edge CK capture within tWLO. The remaining DQ that always
drive LOW when DQS is toggling must be LOW within tWLOE after the first tWLO is satisfied (the prime DQ going LOW). As previously noted, DQS is an input and not an output during this process. Figure 46 (page 129) depicts the basic timing parameters for
the overall write leveling procedure.
The memory controller will most likely sample each applicable prime DQ state and determine whether to increment or decrement its DQS delay setting. After the memory
controller performs enough DQS toggles to detect the CKs 0-to-1 transition, the memory controller should lock the DQS delay setting for that DRAM. After locking the DQS
setting is locked, leveling for the rank will have been achieved, and the write leveling
mode for the rank should be disabled or reprogrammed (if write leveling of another
rank follows).
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128

Write Leveling
Figure 46: Write Leveling Sequence
T1
CK#
CK
Command
T2
tWLS
tWLH
MRS1
NOP2
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
tMOD
ODT
tWLDQSEN
tDQSL3
tDQSH3
tDQSL3
tDQSH3
Differential DQS4
tWLMRD
tWLO
tWLO
Prime DQ5
tWLO
tWLOE
Early remaining DQ
tWLO
Late remaining DQ
Indicates break
in time scale
Notes:
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Undefined Driving Mode
Dont Care
1. MRS: Load MR1 to enter write leveling mode.

2. NOP: NOP or DES.
3. DQS, DQS# needs to fulfill minimum pulse width requirements tDQSH (MIN) and tDQSL
(MIN) as defined for regular writes. The maximum pulse width is system-dependent.
4. Differential DQS is the differential data strobe (DQS, DQS#). Timing reference points are
the zero crossings. The solid line represents DQS; the dotted line represents DQS#.
5. DRAM drives leveling feedback on a prime DQ (DQ0 for x4 and x8). The remaining DQ
are driven LOW and remain in this state throughout the leveling procedure.
129

Write Leveling
Write Leveling Mode Exit Procedure
After the DRAM are leveled, they must exit from write leveling mode before the normal
mode can be used. Figure 47 depicts a general procedure for exiting write leveling
mode. After the last rising DQS (capturing a 1 at T0), the memory controller should stop
driving the DQS signals after tWLO (MAX) delay plus enough delay to enable the memory controller to capture the applicable prime DQ state (at ~Tb0). The DQ balls become
undefined when DQS no longer remains LOW, and they remain undefined until tMOD
after the MRS command (at Te1).
The ODT input should be de-asserted LOW such that ODTLoff (MIN) expires after the
DQS is no longer driving LOW. When ODT LOW satisfies tIS, ODT must be kept LOW (at
~Tb0) until the DRAM is ready for either another rank to be leveled or until the normal
mode can be used. After DQS termination is switched off, write level mode should be
disabled via the MRS command (at Tc2). After tMOD is satisfied (at Te1), any valid command may be registered by the DRAM. Some MRS commands may be issued after tMRD
(at Td1).
Figure 47: Write Leveling Exit Procedure
CK#
CK
Command
T0
T1
T2
Ta0
Tb0
Tc0
Tc1
Tc2
NOP
NOP
NOP
NOP
NOP
NOP
NOP
MRS
Td0
Td1
Te0
Te1
NOP
Valid
NOP
Valid
tMRD
Address
MR1
tIS
Valid
Valid
tMOD
ODT
t
ODTLoff AOF (MIN)
RTT,nom
RTT DQS, RTT DQS#
DQS, DQS#
RTT(DQ)
tWLO
DQ
+ tWLOE
CK = 1
Indicates break
in time scale
Note:
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AOF (MAX)
Undefined Driving Mode
Transitioning
Dont Care
1. The DQ result, = 1, between Ta0 and Tc0, is a result of the DQS, DQS# signals capturing
CK HIGH just after the T0 state.
130

Initialization
Initialization
The following sequence is required for power-up and initialization, as shown in Figure
48 (page 132):
1. Apply power. RESET# is recommended to be below 0.2 V DDQ during power ramp
to ensure the outputs remain disabled (High-Z) and ODT off (RTT is also High-Z).
All other inputs, including ODT, may be undefined.
During power-up, either of the following conditions may exist and must be met:
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
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Condition A:
VDD and V DDQ are driven from a single-power converter output and are
ramped with a maximum delta voltage between them of V 300mV. Slope
reversal of any power supply signal is allowed. The voltage levels on all balls
other than V DD, V DDQ, V SS, V SSQ must be less than or equal to V DDQ and V DD
on one side, and must be greater than or equal to V SSQ and V SS on the other
side.
Both V DD and V DDQ power supplies ramp to V DD,min and V DDQ,min within
tV
DDPR = 200ms.
VREFDQ tracks V DD 0.5, V REFCA tracks V DD 0.5.
VTT is limited to 0.95V when the power ramp is complete and is not applied
directly to the device; however, tVTD should be greater than or equal to 0 to
avoid device latchup.
Condition B:
VDD may be applied before or at the same time as V DDQ.
VDDQ may be applied before or at the same time as V TT, V REFDQ, and V REFCA.
No slope reversals are allowed in the power supply ramp for this condition.
Until stable power, maintain RESET# LOW to ensure the outputs remain disabled
(High-Z). After the power is stable, RESET# must be LOW for at least 200s to begin the initialization process. ODT will remain in the High-Z state while RESET# is
LOW and until CKE is registered HIGH.
CKE must be LOW 10ns prior to RESET# transitioning HIGH.
After RESET# transitions HIGH, wait 500s (minus one clock) with CKE LOW.
After the CKE LOW time, CKE may be brought HIGH (synchronously) and only
NOP or DES commands may be issued. The clock must be present and valid for at
least 10ns (and a minimum of five clocks) and ODT must be driven LOW at least
tIS prior to CKE being registered HIGH. When CKE is registered HIGH, it must be
continuously registered HIGH until the full initialization process is complete.
After CKE is registered HIGH and after tXPR has been satisfied, MRS commands
may be issued. Issue an MRS (LOAD MODE) command to MR2 with the applicable settings (provide LOW to BA2 and BA0 and HIGH to BA1).
Issue an MRS command to MR3 with the applicable settings.
Issue an MRS command to MR1 with the applicable settings, including enabling
the DLL and configuring ODT.
Issue an MRS command to MR0 with the applicable settings, including a DLL RESET command. tDLLK (512) cycles of clock input are required to lock the DLL.
Issue a ZQCL command to calibrate RTT and RON values for the process voltage
temperature (PVT). Prior to normal operation, tZQinit must be satisfied.
When tDLLK and tZQinit have been satisfied, the DDR3 SDRAM will be ready for
normal operation.
131

Initialization
Figure 48: Initialization Sequence
T (MAX) = 200ms
VDD
VDDQ
VTT
See power-up
conditions
in the
initialization
sequence text,
set up 1
VREF
Power-up
ramp
tVTD
Stable and
valid clock
T0
T1
tCK
Tc0
Tb0
Ta0
Td0
CK#
CK
tCKSRX
tIOZ
tCL
tCL
= 20ns
RESET#
tIS
T (MIN) = 10ns
CKE
Valid
ODT
Valid
tIS
Command
NOP
MRS
MRS
MRS
Address
Code
Code
Code
Code
A10
Code
Code
Code
Code
BA0 = L
BA1 = H
BA2 = L
BA0 = H
BA1 = H
BA2 = L
BA0 = H
BA1 = L
BA2 = L
BA0 = L
BA1 = L
BA2 = L
ZQCL
MRS
Valid
DM
BA[2:0]
Valid
Valid
A10 = H
Valid
DQS
DQ
RTT
T = 200s (MIN)
T = 500s (MIN)
tXPR
MR2
All voltage
supplies valid
and stable
tMRD
tMRD
MR3
tMRD
MR1 with
DLL enable
tMOD
MR0 with
DLL reset
tZQinit
ZQ calibration
tDLLK
DRAM ready for

external commands
Normal
operation
Indicates break
in time scale
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132
Dont Care

Voltage Initialization / Change

If the SDRAM is powered up and initialized for the 1.35V operating voltage range, voltage can be increased to the 1.5V operating range provided the following conditions are
met (See Figure 49 (page 134)):
Just prior to increasing the 1.35V operating voltages, no further commands are issued,
other than NOPs or COMMAND INHIBITs, and all banks are in the precharge state.
The 1.5V operating voltages are stable prior to issuing new commands, other than
NOPs or COMMAND INHIBITs.
The DLL is reset and relocked after the 1.5V operating voltages are stable and prior to
any READ command.
The ZQ calibration is performed. tZQinit must be satisfied after the 1.5V operating
voltages are stable and prior to any READ command.
If the SDRAM is powered up and initialized for the 1.5V operating voltage range, voltage
can be reduced to the 1.35V operation range provided the following conditions are met
(See Figure 49 (page 134)) :
Just prior to reducing the 1.5V operating voltages, no further commands are issued,
other than NOPs or COMMAND INHIBITs, and all banks are in the precharge state.
The 1.35V operating voltages are stable prior to issuing new commands, other than
NOPs or COMMAND INHIBITs.
The DLL is reset and relocked after the 1.35V operating voltages are stable and prior to
any READ command.
The ZQ calibration is performed. tZQinit must be satisfied after the 1.35V operating
voltages are stable and prior to any READ command.
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VDD Voltage Switching
After the DDR3L DRAM is powered up and initialized, the power supply can be altered
between the DDR3L and DDR3 levels, provided the sequence in Figure 49 is maintained.
Figure 49: VDD Voltage Switching
Tb
Ta
CK, CK#
Tc
Te
Td
((
))
((
))
((
))
((
))
((
))
((
))
Tf
Ti
Th
Tg
Tj
Tk
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
Valid
tXPR
tMRD
tMRD
((
))
((
))
Valid
((
))
((
))
((
))
((
))
Valid
((
))
((
))
((
))
((
))
((
))
((
))
tCKSRX
VDD, VDDQ (DDR3)
TMIN = 10ns
((
))
((
))
((
))
((
))
VDD, VDDQ (DDR3L)
TMIN = 10ns
TMIN = 200s
T = 500s
RESET#
CKE
((
))
((
))
((
))
((
))
tIS
TMIN = 10ns
((
))
tDLLK
tIS
((
))
((
))
MRS
((
))
((
))
MRS
((
))
((
))
((
))
((
))
MR2
((
))
((
))
MR3
((
))
((
))
Command
((
))
((
))
((
))
((
))
BA
((
))
((
))
((
))
((
))
ODT
((
))
((
))
((
))
((
))
((
))
((
))
RTT
((
))
((
))
((
))
Note 1
tMRD
MRS
MR1
tMOD
((
))
((
))
MRS
((
))
((
))
((
))
((
))
MR0
((
))
((
))
tZQinit
ZQCL
((
))
((
))
Note 1
tIS
tIS
((
((
((
((
))
))
))
))
Static LOW in case RTT,nom is enabled at time Tg, otherwise static HIGH or LOW
((
((
((
((
))
))
))
))
((
))
((
))
((
))
((
))
((
))
Time break
((
))
Note:
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Valid
Dont Care
1. From time point Td until Tk, NOP or DES commands must be applied between MRS and
ZQCL commands.
134

Mode Registers
Mode Registers
Mode registers (MR0MR3) are used to define various modes of programmable operations of the DDR3 SDRAM. A mode register is programmed via the mode register set
(MRS) command during initialization, and it retains the stored information (except for
MR0[8], which is self-clearing) until it is reprogrammed, RESET# goes LOW, the device
loses power.
Contents of a mode register can be altered by re-executing the MRS command. Even if
the user wants to modify only a subset of the mode registers variables, all variables
must be programmed when the MRS command is issued. Reprogramming the mode
register will not alter the contents of the memory array, provided it is performed correctly.
The MRS command can only be issued (or re-issued) when all banks are idle and in the
precharged state (tRP is satisfied and no data bursts are in progress). After an MRS command has been issued, two parameters must be satisfied: tMRD and tMOD. The controller must wait tMRD before initiating any subsequent MRS commands.
Figure 50: MRS to MRS Command Timing (tMRD)
CK#
T0
T1
T2
Ta0
Ta1
Ta2
MRS1
NOP
NOP
NOP
NOP
MRS2
CK
Command
tMRD
Address
Valid
Valid
CKE3
Indicates break
in time scale
Notes:
Dont Care
1. Prior to issuing the MRS command, all banks must be idle and precharged, tRP (MIN)
must be satisfied, and no data bursts can be in progress.
2. tMRD specifies the MRS to MRS command minimum cycle time.
3. CKE must be registered HIGH from the MRS command until tMRSPDEN (MIN) (see Power-Down Mode (page 182)).
4. For a CAS latency change, tXPDLL timing must be met before any non-MRS command.
The controller must also wait tMOD before initiating any non-MRS commands (excluding NOP and DES). The DRAM requires tMOD in order to update the requested features,
with the exception of DLL RESET, which requires additional time. Until tMOD has been
satisfied, the updated features are to be assumed unavailable.
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Mode Register 0 (MR0)
Figure 51: MRS to nonMRS Command Timing (tMOD)
T0
T1
T2
Ta0
Ta1
Ta2
MRS
NOP
NOP
NOP
NOP
non
MRS
CK#
CK
Command
tMOD
Address
Valid
Valid
Valid
CKE
Old
setting
New
setting
Updating setting
Indicates break
in time scale
Notes:
Dont Care
1. Prior to issuing the MRS command, all banks must be idle (they must be precharged, tRP
must be satisfied, and no data bursts can be in progress).
2. Prior to Ta2 when tMOD (MIN) is being satisfied, no commands (except NOP/DES) may be
issued.
3. If RTT was previously enabled, ODT must be registered LOW at T0 so that ODTL is satisfied prior to Ta1. ODT must also be registered LOW at each rising CK edge from T0 until
tMODmin is satisfied at Ta2.
4. CKE must be registered HIGH from the MRS command until tMRSPDEN (MIN), at which
time power-down may occur (see Power-Down Mode (page 182)).

The base register, mode register 0 (MR0), is used to define various DDR3 SDRAM modes
of operation. These definitions include the selection of a burst length, burst type, CAS
latency, operating mode, DLL RESET, write recovery, and precharge power-down mode
Burst Length
Burst length is defined by MR0[1:0]. Read and write accesses to the DDR3 SDRAM are
burst-oriented, with the burst length being programmable to 4 (chop) mode, 8 (fixed)
mode, or selectable using A12 during a READ/WRITE command (on-the-fly). The burst
length determines the maximum number of column locations that can be accessed for
a given READ or WRITE command. When MR0[1:0] is set to 01 during a READ/WRITE
command, if A12 = 0, then BC4 mode is selected. If A12 = 1, then BL8 mode is selected.
Specific timing diagrams, and turnaround between READ/WRITE, are shown in the
READ/WRITE sections of this document.
When a READ or WRITE command is issued, a block of columns equal to the burst
length is effectively selected. All accesses for that burst take place within this block,
meaning that the burst will wrap within the block if a boundary is reached. The block is
uniquely selected by A[i:2] when the burst length is set to 4 and by A[i:3] when the burst
length is set to 8, where Ai is the most significant column address bit for a given configuration. The remaining (least significant) address bit(s) is (are) used to select the start-
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ing location within the block. The programmed burst length applies to both READ and
WRITE bursts.
Figure 52: Mode Register 0 (MR0) Definitions
M15 M14
BA2 BA1 BA0 A[15:13] A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
Address bus
18 17 16 1513 12 11 10
01 0 0
01
PD
WR
Mode register 0 (MR0)
8 7 6 5 4 3 2
DLL 01 CAS# latency BT CL
1 0
BL
M1 M0
Mode Register
M12
Precharge PD
DLL off (slow exit)
DLL on (fast exit)
M11 M10 M9 Write Recovery
Note:
Burst Length
Fixed BL8
4 or 8 (on-the-fly via A12)
No
Fixed BC4 (chop)
Yes
Reserved
M8 DLL Reset
CAS Latency
M3
16
M6 M5 M4 M2
0
Reserved
Sequential (nibble)
READ Burst Type
Interleaved
10
12
10
14
11
12
13
14
1. MR0[18, 15:13, 7] are reserved for future use and must be programmed to 0.
Burst Type
Accesses within a given burst can be programmed to either a sequential or an interleaved order. The burst type is selected via MR0[3] (see Figure 52 (page 137)). The ordering of accesses within a burst is determined by the burst length, the burst type, and the
starting column address. DDR3 only supports 4-bit burst chop and 8-bit burst access
modes. Full interleave address ordering is supported for READs, while WRITEs are restricted to nibble (BC4) or word (BL8) boundaries.
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Table 74: Burst Order
Burst
Length
READ/
WRITE
Starting
Column Address
(A[2, 1, 0])
Burst Type = Sequential

(Decimal)
Burst Type = Interleaved

(Decimal)
Notes
4 (chop)
READ
000
0, 1, 2, 3, Z, Z, Z, Z
0, 1, 2, 3, Z, Z, Z, Z
1, 2
001
1, 2, 3, 0, Z, Z, Z, Z
1, 0, 3, 2, Z, Z, Z, Z
1, 2
010
2, 3, 0, 1, Z, Z, Z, Z
2, 3, 0, 1, Z, Z, Z, Z
1, 2
011
3, 0, 1, 2, Z, Z, Z, Z
3, 2, 1, 0, Z, Z, Z, Z
1, 2
100
4, 5, 6, 7, Z, Z, Z, Z
4, 5, 6, 7, Z, Z, Z, Z
1, 2
101
5, 6, 7, 4, Z, Z, Z, Z
5, 4, 7, 6, Z, Z, Z, Z
1, 2
110
6, 7, 4, 5, Z, Z, Z, Z
6, 7, 4, 5, Z, Z, Z, Z
1, 2
WRITE
8 (fixed)
READ
WRITE
Notes:
111
7, 4, 5, 6, Z, Z, Z, Z
7, 6, 5, 4, Z, Z, Z, Z
1, 2
0VV
0, 1, 2, 3, X, X, X, X
0, 1, 2, 3, X, X, X, X
1, 3, 4
1VV
4, 5, 6, 7, X, X, X, X
4, 5, 6, 7, X, X, X, X
1, 3, 4
000
0, 1, 2, 3, 4, 5, 6, 7
0, 1, 2, 3, 4, 5, 6, 7
001
1, 2, 3, 0, 5, 6, 7, 4
1, 0, 3, 2, 5, 4, 7, 6
010
2, 3, 0, 1, 6, 7, 4, 5
2, 3, 0, 1, 6, 7, 4, 5
011
3, 0, 1, 2, 7, 4, 5, 6
3, 2, 1, 0, 7, 6, 5, 4
100
4, 5, 6, 7, 0, 1, 2, 3
4, 5, 6, 7, 0, 1, 2, 3
101
5, 6, 7, 4, 1, 2, 3, 0
5, 4, 7, 6, 1, 0, 3, 2
110
6, 7, 4, 5, 2, 3, 0, 1
6, 7, 4, 5, 2, 3, 0, 1
111
7, 4, 5, 6, 3, 0, 1, 2
7, 6, 5, 4, 3, 2, 1, 0
VVV
0, 1, 2, 3, 4, 5, 6, 7
0, 1, 2, 3, 4, 5, 6, 7
1, 3
1. Internal READ and WRITE operations start at the same point in time for BC4 as they do
for BL8.
2. Z = Data and strobe output drivers are in tri-state.
3. V = A valid logic level (0 or 1), but the respective input buffer ignores level-on input
pins.
4. X = Dont Care.
DLL RESET
DLL RESET is defined by MR0[8] (see Figure 52 (page 137)). Programming MR0[8] to 1
activates the DLL RESET function. MR0[8] is self-clearing, meaning it returns to a value
of 0 after the DLL RESET function has been initiated.
Anytime the DLL RESET function is initiated, CKE must be HIGH and the clock held
stable for 512 (tDLLK) clock cycles before a READ command can be issued. This is to
allow time for the internal clock to be synchronized with the external clock. Failing to
wait for synchronization can result in invalid output timing specifications, such as
tDQSCK timings.
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Write Recovery
WRITE recovery time is defined by MR0[11:9] (see Figure 52 (page 137)). Write recovery
values of 5, 6, 7, 8, 10, or 12 can be used by programming MR0[11:9]. The user is required to program the correct value of write recovery, which is calculated by dividing
tWR (ns) by tCK (ns) and rounding up a noninteger value to the next integer:
WR (cycles) = roundup (tWR (ns)/tCK (ns)).
Precharge Power-Down (Precharge PD)

The precharge power-down (precharge PD) bit applies only when precharge powerdown mode is being used. When MR0[12] is set to 0, the DLL is off during precharge
power-down, providing a lower standby current mode; however, tXPDLL must be satisfied when exiting. When MR0[12] is set to 1, the DLL continues to run during precharge
power-down mode to enable a faster exit of precharge power-down mode; however, tXP
must be satisfied when exiting (see Power-Down Mode (page 182)).
CAS Latency (CL)

CAS latency (CL) is defined by MR0[6:4], as shown in Figure 52 (page 137). CAS latency
is the delay, in clock cycles, between the internal READ command and the availability of
the first bit of output data. CL can be set to 5 through 14. DDR3 SDRAM do not support
half-clock latencies.
Examples of CL = 6 and CL = 8 are shown below. If an internal READ command is registered at clock edge n, and the CAS latency is m clocks, the data will be available nominally coincident with clock edge n + m. See Speed Bin Tables for the CLs supported at
various operating frequencies.
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Figure 53: READ Latency
T0
T1
T2
T3
T4
T5
T6
T7
T8
READ
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CK#
CK
Command
AL = 0, CL = 6
DQS, DQS#
DI
n
DQ
DI
n+1
DI
n+2
DI
n+3
DI
n+4
T0
T1
T2
T3
T4
T5
T6
T7
T8
READ
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CK#
CK
Command
AL = 0, CL = 8
DQS, DQS#
DI
n
DQ
Transitioning Data
Notes:
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Dont Care
1. For illustration purposes, only CL = 6 and CL = 8 are shown. Other CL values are possible.
2. Shown with nominal tDQSCK and nominal tDSDQ.
140


The mode register 1 (MR1) controls additional functions and features not available in
the other mode registers: Q OFF (OUTPUT DISABLE), TDQS (for the x8 configuration
only), DLL ENABLE/DLL DISABLE, RTT,nom value (ODT), WRITE LEVELING, POSTED
CAS ADDITIVE latency, and OUTPUT DRIVE STRENGTH. These functions are controlled via the bits shown in Figure 54 (page 141). The MR1 register is programmed via the
MRS command and retains the stored information until it is reprogrammed, until RESET# goes LOW, or until the device loses power. Reprogramming the MR1 register will
not alter the contents of the memory array, provided it is performed correctly.
The MR1 register must be loaded when all banks are idle and no bursts are in progress.
The controller must satisfy the specified timing parameters tMRD and tMOD before initiating a subsequent operation.
Figure 54: Mode Register 1 (MR1) Definition
BA2 BA1 BA0 A15 A14 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2
A1 A0
Address bus
18 17 16 15 14 13 12 11 10 9 8 7 6 5
01 0 1 01 01 01 Q Off TDQS 01 RTT 01 WL RTT ODS
M17 M16
4 3 2
1 0
AL RTT ODS DLL
Mode Register
Mode register set 0 (MR0)
M12
Q Off
M11
TDQS
Enabled
Disabled
Disabled
Enabled
R TT,nom
(ODT) 2
M0
DLL Enable
Enable (normal)
Disable
M5 M1 Output Drive St rength

R TT,nom
(ODT) 3
M7 Write Levelization
M9 M6 M2
Non- Writes
Writes
Disable (normal)
0 0 0
R TT,nom disabled
R TT,nom disabled
Enable
0 0 1
RZQ/4 (60 [NOM])
RZQ/4 (60 [NOM])
RZQ/6 (40 [NOM])
RZQ/7 (34 [NOM])
Reserved
Reserved
0 1 0 RZQ/2 (120 [NOM]) RZQ/2 (120 [NOM])

0 1 1
Notes:
RZQ/6 (40 [NOM])
RZQ/6 (40 [NOM])
M4 M3 Additive Latency (AL)
1 0 0 RZQ/12 (20 [NOM])
n/a
Disabled (AL = 0)
1 0 1
RZQ/8 (30 [NOM])
n/a
AL = CL - 1
1 1 0
Reserved
Reserved
AL = CL - 2
1 1 1
Reserved
Reserved
Reserved
1. MR1[18, 15:13, 10, 8] are reserved for future use and must be programmed to 0.
2. During write leveling, if MR1[7] and MR1[12] are 1, then all RTT,nom values are available
for use.
3. During write leveling, if MR1[7] is a 1, but MR1[12] is a 0, then only RTT,nom write values
are available for use.
DLL Enable/DLL Disable

The DLL may be enabled or disabled by programming MR1[0] during the LOAD MODE
command, as shown in Figure 54 (page 141). The DLL must be enabled for normal operation. DLL enable is required during power-up initialization and upon returning to normal operation after having disabled the DLL for the purpose of debugging or evaluation. Enabling the DLL should always be followed by resetting the DLL using the appropriate LOAD MODE command.
If the DLL is enabled prior to entering self refresh mode, the DLL is automatically disabled when entering SELF REFRESH operation and is automatically re-enabled and reset
upon exit of SELF REFRESH operation. If the DLL is disabled prior to entering self rePDF: 09005aef85993e22
141

fresh mode, the DLL remains disabled even upon exit of SELF REFRESH operation until
it is re-enabled and reset.
The DRAM is not tested to checknor does Micron warrant compliance withnormal
mode timings or functionality when the DLL is disabled. An attempt has been made to
have the DRAM operate in the normal mode where reasonably possible when the DLL
has been disabled; however, by industry standard, a few known exceptions are defined:
ODT is not allowed to be used
The output data is no longer edge-aligned to the clock
CL and CWL can only be six clocks
When the DLL is disabled, timing and functionality can vary from the normal operation
specifications when the DLL is enabled (see DLL Disable Mode (page 120)). Disabling
the DLL also implies the need to change the clock frequency (see Input Clock Frequency Change (page 124)).
Output Drive Strength

The DDR3 SDRAM uses a programmable impedance output buffer. The drive strength
mode register setting is defined by MR1[5, 1]. RZQ/7 (34 [NOM]) is the primary output
driver impedance setting for DDR3 SDRAM devices. To calibrate the output driver impedance, an external precision resistor (RZQ) is connected between the ZQ ball and
VSSQ. The value of the resistor must be 240 1%.
The output impedance is set during initialization. Additional impedance calibration updates do not affect device operation, and all data sheet timings and current specifications are met during an update.
To meet the 34 specification, the output drive strength must be set to 34 during initialization. To obtain a calibrated output driver impedance after power-up, the DDR3
SDRAM needs a calibration command that is part of the initialization and reset procedure.
OUTPUT ENABLE/DISABLE
The OUTPUT ENABLE function is defined by MR1[12], as shown in Figure 54 (page
141). When enabled (MR1[12] = 0), all outputs (DQ, DQS, DQS#) function when in the
normal mode of operation. When disabled (MR1[12] = 1), all DDR3 SDRAM outputs
(DQ and DQS, DQS#) are tri-stated. The output disable feature is intended to be used
during IDD characterization of the READ current and during tDQSS margining (write
leveling) only.
TDQS Enable
Termination data strobe (TDQS) is a feature of the x8 DDR3 SDRAM configuration that
provides termination resistance (RTT) and may be useful in some system configurations.
TDQS is not supported in x4 or x16 configurations. When enabled via the mode register
(MR1[11]), the RTT that is applied to DQS and DQS# is also applied to TDQS and TDQS#.
In contrast to the RDQS function of DDR2 SDRAM, DDR3s TDQS provides the termination resistance RTT only. The OUTPUT DATA STROBE function of RDQS is not provided
by TDQS; thus, R ON does not apply to TDQS and TDQS#. The TDQS and DM functions
share the same ball. When the TDQS function is enabled via the mode register, the DM
function is not supported. When the TDQS function is disabled, the DM function is provided, and the TDQS# ball is not used. The TDQS function is available in the x8 DDR3
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SDRAM configuration only and must be disabled via the mode register for the x4 and
x16 configurations.
On-Die Termination
ODT resistance RTT,nom is defined by MR1[9, 6, 2] (see Figure 54 (page 141)). The R TT
termination value applies to the DQ, DM, DQS, DQS#, and TDQS, TDQS# balls. DDR3
supports multiple RTT termination values based on RZQ/n where n can be 2, 4, 6, 8, or
12 and RZQ is 240.
Unlike DDR2, DDR3 ODT must be turned off prior to reading data out and must remain
off during a READ burst. RTT,nom termination is allowed any time after the DRAM is initialized, calibrated, and not performing read access, or when it is not in self refresh
mode. Additionally, write accesses with dynamic ODT (RTT(WR)) enabled temporarily replaces RTT,nom with RTT(WR).
The actual effective termination, RTT(EFF), may be different from the RTT targeted due to
nonlinearity of the termination. For RTT(EFF) values and calculations (see On-Die Termination (ODT) (page 192)).
The ODT feature is designed to improve signal integrity of the memory channel by enabling the DDR3 SDRAM controller to independently turn on/off ODT for any or all devices. The ODT input control pin is used to determine when R TT is turned on (ODTL on)
and off (ODTL off), assuming ODT has been enabled via MR1[9, 6, 2].
Timings for ODT are detailed in On-Die Termination (ODT) (page 192).
WRITE LEVELING
The WRITE LEVELING function is enabled by MR1[7], as shown in Figure 54 (page 141).
Write leveling is used (during initialization) to deskew the DQS strobe to clock offset as
a result of fly-by topology designs. For better signal integrity, DDR3 SDRAM memory
modules adopted fly-by topology for the commands, addresses, control signals, and
clocks.
The fly-by topology benefits from a reduced number of stubs and their lengths. However, fly-by topology induces flight time skews between the clock and DQS strobe (and
DQ) at each DRAM on the DIMM. Controllers will have a difficult time maintaining
tDQSS, tDSS, and tDSH specifications without supporting write leveling in systems
which use fly-by topology-based modules. Write leveling timing and detailed operation
information is provided in Write Leveling (page 126).
POSTED CAS ADDITIVE Latency

POSTED CAS ADDITIVE latency (AL) is supported to make the command and data bus
efficient for sustainable bandwidths in DDR3 SDRAM. MR1[4, 3] define the value of AL,
as shown in Figure 55 (page 144). MR1[4, 3] enable the user to program the DDR3
SDRAM with AL = 0, CL - 1, or CL - 2.
With this feature, the DDR3 SDRAM enables a READ or WRITE command to be issued
after the ACTIVATE command for that bank prior to tRCD (MIN). The only restriction is
ACTIVATE to READ or WRITE + AL tRCD (MIN) must be satisfied. Assuming tRCD
(MIN) = CL, a typical application using this feature sets AL = CL - 1tCK = tRCD (MIN) - 1
tCK. The READ or WRITE command is held for the time of the AL before it is released
internally to the DDR3 SDRAM device. READ latency (RL) is controlled by the sum of
the AL and CAS latency (CL), RL = AL + CL. WRITE latency (WL) is the sum of CAS
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WRITE latency and AL, WL = AL + CWL (see Mode Register 2 (MR2) (page 144)). Examples of READ and WRITE latencies are shown in Figure 55 (page 144) and Figure 57
(page 145).
Figure 55: READ Latency (AL = 5, CL = 6)
BC4
CK#
T0
T1
T2
T6
T11
T12
T13
T14
ACTIVE n
READ n
NOP
NOP
NOP
NOP
NOP
NOP
CK
Command
tRCD
(MIN)
DQS, DQS#
AL = 5
CL = 6
DO
n
DQ
DO
n+1
DO
n+2
DO
n+3
RL = AL + CL = 11
Indicates break
in time scale
Transitioning Data
Dont Care

the other mode registers. These additional functions are CAS WRITE latency (CWL), AUTO SELF REFRESH (ASR), SELF REFRESH TEMPERATURE (SRT), and DYNAMIC ODT
(RTT(WR)). These functions are controlled via the bits shown in Figure 56. The MR2 is
programmed via the MRS command and will retain the stored information until it is
programmed again or until the device loses power. Reprogramming the MR2 register
will not alter the contents of the memory array, provided it is performed correctly. The
MR2 register must be loaded when all banks are idle and no data bursts are in progress,
and the controller must wait the specified time tMRD and tMOD before initiating a subsequent operation.
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BA2 BA1 BA0 A15 A14 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
Address bus
18 17 16 15 14 13 12 11 10 9 8 7 6
1 0 01 01 01 01 01 R TT(WR) 01 SRT ASR
M17 M16
Mode Register
M7 Self Refresh Temperature
CWL
01
2
01
M5 M4 M3
1
01
0
01
CAS Write Latency (CWL)

5 CK ( t CK 2.5ns)
6 CK (2.5ns > t CK 1.875ns)
0 Normal (0C to 85C)
1 Extended ( 85C to 95C)
1 10 CK (1.07ns > tCK 0.938ns)
Reserved
Reserved
M10 M9
Dynamic ODT
(R TT(WR) )
M6
R TT(WR) disabled
RZQ/4 (60W [NOM])
RZQ/2 (120W [NOM])
Auto Self Refresh

(Optional)2
Disabled: Manual
7 CK (1.875ns > t CK 1.5ns)

8 CK (1.5ns > t CK 1.25ns)
9 CK (1.25ns > t CK 1.07ns)
1 Enabled: Automatic
Reserved
1. MR2[18, 15:11, 8, and 2:0] are reserved for future use and must all be programmed to 0.
Note:
CAS WRITE Latency (CWL)

CWL is defined by MR2[5:3] and is the delay, in clock cycles, from the releasing of the
internal write to the latching of the first data in. CWL must be correctly set to the corresponding operating clock frequency (see Figure 56 (page 145)). The overall WRITE latency (WL) is equal to CWL + AL (Figure 54 (page 141)).
Figure 57: CAS WRITE Latency
CK#
T0
T1
ACTIVE n
WRITE n
T2
T6
T11
T12
T13
T14
NOP
NOP
NOP
NOP
NOP
NOP
CK
Command
tRCD
(MIN)
DQS, DQS#
CWL = 6
AL = 5
DI
n
DQ
DI
n+1
DI
n+2
DI
n+3
WL = AL + CWL = 11
Indicates break
in time scale
Transitioning Data
Dont Care
AUTO SELF REFRESH (ASR)

Mode register MR2[6] is used to disable/enable the ASR function. When ASR is disabled,
the self refresh modes refresh rate is assumed to be at the normal 85C limit (sometimes referred to as 1x refresh rate). In the disabled mode, ASR requires the user to ensure the DRAM never exceeds a T C of 85C while in self refresh unless the user enables
the SRT feature listed below when the T C is between 85C and 95C.
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Enabling ASR assumes the DRAM self refresh rate is changed automatically from 1x to
2x when the case temperature exceeds 85C. This enables the user to operate the DRAM
beyond the standard 85C limit up to the optional extended temperature range of 95C
while in self refresh mode.
The standard self refresh current test specifies test conditions to normal case temperature (85C) only, meaning if ASR is enabled, the standard self refresh current specifications do not apply (see Extended Temperature Usage (page 181)).
SELF REFRESH TEMPERATURE (SRT)

Mode register MR2[7] is used to disable/enable the SRT function. When SRT is disabled,
the self refresh modes refresh rate is assumed to be at the normal 85C limit (sometimes referred to as 1x refresh rate). In the disabled mode, SRT requires the user to ensure the DRAM never exceeds a T C of 85C while in self refresh mode unless the user enables ASR.
When SRT is enabled, the DRAM self refresh is changed internally from 1x to 2x, regardless of the case temperature. This enables the user to operate the DRAM beyond the
standard 85C limit up to the optional extended temperature range of 95C while in self
refresh mode. The standard self refresh current test specifies test conditions to normal
case temperature (85C) only, meaning if SRT is enabled, the standard self refresh current specifications do not apply (see Extended Temperature Usage (page 181)).
SRT vs. ASR

If the normal case temperature limit of 85C is not exceeded, then neither SRT nor ASR
is required, and both can be disabled throughout operation. However, if the extended
temperature option of 95C is needed, the user is required to provide a 2x refresh rate
during (manual) refresh and to enable either the SRT or the ASR to ensure self refresh is
performed at the 2x rate.
SRT forces the DRAM to switch the internal self refresh rate from 1x to 2x. Self refresh is
performed at the 2x refresh rate regardless of the case temperature.
ASR automatically switches the DRAMs internal self refresh rate from 1x to 2x. However, while in self refresh mode, ASR enables the refresh rate to automatically adjust between 1x to 2x over the supported temperature range. One other disadvantage with ASR
is the DRAM cannot always switch from a 1x to a 2x refresh rate at an exact case temperature of 85C. Although the DRAM will support data integrity when it switches from a 1x
to a 2x refresh rate, it may switch at a lower temperature than 85C.
Since only one mode is necessary, SRT and ASR cannot be enabled at the same time.
DYNAMIC ODT
The dynamic ODT (RTT(WR)) feature is defined by MR2[10, 9]. Dynamic ODT is enabled
when a value is selected. This new DDR3 SDRAM feature enables the ODT termination
value to change without issuing an MRS command, essentially changing the ODT termination on-the-fly.
With dynamic ODT (RTT(WR)) enabled, the DRAM switches from normal ODT (RTT,nom)
to dynamic ODT (RTT(WR)) when beginning a WRITE burst and subsequently switches
back to ODT (RTT,nom) at the completion of the WRITE burst. If R TT,nom is disabled, the
RTT,nom value will be High-Z. Special timing parameters must be adhered to when dy-
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namic ODT (RTT(WR)) is enabled: ODTLcnw, ODTLcnw4, ODTLcnw8, ODTH4, ODTH8,
and tADC.
Dynamic ODT is only applicable during WRITE cycles. If ODT (R TT,nom) is disabled, dynamic ODT (RTT(WR)) is still permitted. RTT,nom and RTT(WR) can be used independent of
one other. Dynamic ODT is not available during write leveling mode, regardless of the
state of ODT (RTT,nom). For details on dynamic ODT operation, refer to Dynamic ODT
(page 195).

the other mode registers. Currently defined is the MULTIPURPOSE REGISTER (MPR).
This function is controlled via the bits shown in Figure 58 (page 147). The MR3 is programmed via the LOAD MODE command and retains the stored information until it is
programmed again or until the device loses power. Reprogramming the MR3 register
will not alter the contents of the memory array, provided it is performed correctly. The
MR3 register must be loaded when all banks are idle and no data bursts are in progress,
and the controller must wait the specified time tMRD and tMOD before initiating a subsequent operation.
BA2 BA1 BA0 A15 A14 A13 A12 A11 A10 A9 A8
18 17 16
1 1
01
A4 A3
A2
A1 A0
15 14 13 12 11 10 9
8 7
6
5
4
3
2
1 0
01 01 01 01 01 01 01 01 01 01 01 01 01 MPR MPR_RF
Address bus
M2
MPR Enable
Mode register set (MR0)
Normal DRAM operations2
MPR READ Function

Predefined pattern3
Dataflow from MPR
Reserved
Reserved
Reserved
M17 M16
Notes:
A7 A6 A5
Mode Register
M1 M0
1. MR3[18 and 15:3] are reserved for future use and must all be programmed to 0.
2. When MPR control is set for normal DRAM operation, MR3[1, 0] will be ignored.
3. Intended to be used for READ synchronization.
MULTIPURPOSE REGISTER (MPR)

The MULTIPURPOSE REGISTER function is used to output a predefined system timing
calibration bit sequence. Bit 2 is the master bit that enables or disables access to the
MPR register, and bits 1 and 0 determine which mode the MPR is placed in. The basic
concept of the multipurpose register is shown in Figure 59 (page 148).
If MR3[2] is a 0, then the MPR access is disabled, and the DRAM operates in normal
mode. However, if MR3[2] is a 1, then the DRAM no longer outputs normal read data
but outputs MPR data as defined by MR3[0, 1]. If MR3[0, 1] is equal to 00, then a predefined read pattern for system calibration is selected.
To enable the MPR, the MRS command is issued to MR3, and MR3[2] = 1. Prior to issuing the MRS command, all banks must be in the idle state (all banks are precharged,
and tRP is met). When the MPR is enabled, any subsequent READ or RDAP commands
are redirected to the multipurpose register. The resulting operation when either a READ
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or a RDAP command is issued, is defined by MR3[1:0] when the MPR is enabled (see
Table 76 (page 149)). When the MPR is enabled, only READ or RDAP commands are allowed until a subsequent MRS command is issued with the MPR disabled (MR3[2] = 0).
Power-down mode, self refresh, and any other nonREAD/RDAP commands are not allowed during MPR enable mode. The RESET function is supported during MPR enable
mode.
Figure 59: Multipurpose Register (MPR) Block Diagram
Memory core
MR3[2] = 0 (MPR off)
Multipurpose register
predefined data for READs
MR3[2] = 1 (MPR on)
DQ, DM, DQS, DQS#
Notes:
1. A predefined data pattern can be read out of the MPR with an external READ command.
2. MR3[2] defines whether the data flow comes from the memory core or the MPR. When
the data flow is defined, the MPR contents can be read out continuously with a regular
READ or RDAP command.
Table 75: MPR Functional Description of MR3 Bits

MR3[2]
MR3[1:0]
MPR
MPR READ Function
Function
Dont Care
Normal operation, no MPR transaction

All subsequent READs come from the DRAM memory array
All subsequent WRITEs go to the DRAM memory array
A[1:0]
(see Table 76 (page 149))
Enable MPR mode, subsequent READ/RDAP commands defined by bits 1 and

2
MPR Functional Description

The MPR JEDEC definition enables either a prime DQ (DQ0 on a x4 and a x8; on a x16,
DQ0 = lower byte and DQ8 = upper byte) to output the MPR data with the remaining
DQs driven LOW, or for all DQs to output the MPR data . The MPR readout supports
fixed READ burst and READ burst chop (MRS and OTF via A12/BC#) with regular READ
latencies and AC timings applicable, provided the DLL is locked as required.
MPR addressing for a valid MPR read is as follows:
A[1:0] must be set to 00 as the burst order is fixed per nibble
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A2 selects the burst order:
BL8, A2 is set to 0, and the burst order is fixed to 0, 1, 2, 3, 4, 5, 6, 7
For burst chop 4 cases, the burst order is switched on the nibble base along with the
following:
A2 = 0; burst order = 0, 1, 2, 3
A2 = 1; burst order = 4, 5, 6, 7
Burst order bit 0 (the first bit) is assigned to LSB, and burst order bit 7 (the last bit) is
assigned to MSB
A[9:3] are a Dont Care
A10 is a Dont Care
A11 is a Dont Care
A12: Selects burst chop mode on-the-fly, if enabled within MR0
A13 is a Dont Care
BA[2:0] are a Dont Care
MPR Register Address Definitions and Bursting Order

The MPR currently supports a single data format. This data format is a predefined read
pattern for system calibration. The predefined pattern is always a repeating 01 bit pattern.
Examples of the different types of predefined READ pattern bursts are shown in the following figures.
Table 76: MPR Readouts and Burst Order Bit Mapping
MR3[2]
MR3[1:0]
Function
00
READ predefined pattern

for system calibration
01
RFU
10
RFU
11
RFU
Note:
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Burst
Length
Read
A[2:0]
BL8
000
Burst order: 0, 1, 2, 3, 4, 5, 6, 7
Predefined pattern: 0, 1, 0, 1, 0, 1, 0, 1
BC4
000
Burst order: 0, 1, 2, 3
Predefined pattern: 0, 1, 0, 1
BC4
100
Burst order: 4, 5, 6, 7
Predefined pattern: 0, 1, 0, 1
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
Burst Order and Data Pattern
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
1. Burst order bit 0 is assigned to LSB, and burst order bit 7 is assigned to MSB of the selected MPR agent.
149
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Figure 60: MPR System Read Calibration with BL8: Fixed Burst Order Single Readout
T0
Ta0
Tb0
Tb1
Tc0
Tc1
Tc2
Tc3
Tc4
Tc5
Tc6
Tc7
Tc8
Tc9
Tc10
PREA
MRS
READ1
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
MRS
NOP
NOP
Valid
CK#
CK
Command
tRP
tMPRR
tMOD
tMOD
Bank address
Valid
A[1:0]
02
Valid
A2
02
A[9:3]
00
Valid
00
Valid
A11
Valid
A12/BC#
Valid 1
A[15:13]
Valid
A10/AP
150
RL
DQS, DQS#
Indicates break
in time scale
Notes:
1. READ with BL8 either by MRS or OTF.

2. Memory controller must drive 0 on A[2:0].
Dont Care

DQ
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Figure 61: MPR System Read Calibration with BL8: Fixed Burst Order, Back-to-Back Readout
CK#
CK
Command
T0
PREA
Ta
Tb
MRS
READ1
tRP
Tc0
Tc1
Tc2
Tc3
Tc4
Tc5
Tc6
Tc7
Tc8
Tc9
READ1
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Valid
Valid
A[1:0]
02
02
Valid
A2
02
12
A[9:3]
00
Valid
Valid
00
Valid
Valid
A11
Valid
Valid
A12/BC#
Valid
Valid 1
A[15:13]
Valid
Valid
Valid
tMOD
Bank address
A10/AP
Td
MRS
tMPRR
tCCD
tMOD
Tc10
151
RL
DQS, DQS#
RL
Indicates break
in time scale
Notes:
1. READ with BL8 either by MRS or OTF.

2. Memory controller must drive 0 on A[2:0].
Dont Care

DQ
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Figure 62: MPR System Read Calibration with BC4: Lower Nibble, Then Upper Nibble
T0
Ta
Tb
Tc0
Tc1
Tc2
Tc3
Tc4
Tc5
Tc6
Tc7
PREA
MRS
READ1
READ1
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Tc8
Tc9
MRS
NOP
Tc10
Td
NOP
Valid
CK#
CK
Command
tRF
tMPRR
tCCD
tMOD
tMOD
Bank address
Valid
Valid
A[1:0]
02
02
Valid
A2
03
14
A[9:3]
00
Valid
Valid
00
Valid
Valid
A11
Valid
Valid
A12/BC#
Valid 1
Valid 1
A[15:13]
Valid
Valid
A10/AP
152
RL
DQS, DQS#
RL
Indicates break
in time scale
Notes:
1.
2.
3.
4.
READ with BC4 either by MRS or OTF.

Memory controller must drive 0 on A[1:0].
A2 = 0 selects lower 4 nibble bits 0 . . . 3.
A2 = 1 selects upper 4 nibble bits 4 . . . 7.
Dont Care

DQ
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Figure 63: MPR System Read Calibration with BC4: Upper Nibble, Then Lower Nibble
T0
Ta
Tb
Tc0
Tc1
Tc2
Tc3
Tc4
Tc5
Tc6
Tc7
PREA
MRS
READ1
READ1
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Tc8
Tc9
MRS
NOP
Tc10
Td
NOP
Valid
CK#
CK
Command
tRF
tCCD
tMOD
tMPRR
tMOD
Bank address
Valid
Valid
A[1:0]
02
02
Valid
A2
13
04
A[9:3]
00
Valid
Valid
00
Valid
Valid
A11
Valid
Valid
A12/BC#
Valid 1
Valid 1
A[15:13]
Valid
Valid
A10/AP
153
RL
DQS, DQS#
RL
Indicates break
in time scale
Notes:
1.
2.
3.
4.
READ with BC4 either by MRS or OTF.

Memory controller must drive 0 on A[1:0].
A2 = 1 selects upper 4 nibble bits 4 . . . 7.
A2 = 0 selects lower 4 nibble bits 0 . . . 3.
Dont Care

DQ

MODE REGISTER SET (MRS) Command
MPR Read Predefined Pattern
The predetermined read calibration pattern is a fixed pattern of 0, 1, 0, 1, 0, 1, 0, 1. The
following is an example of using the read out predetermined read calibration pattern.
The example is to perform multiple reads from the multipurpose register to do system
level read timing calibration based on the predetermined and standardized pattern.
The following protocol outlines the steps used to perform the read calibration:
1. Precharge all banks
2. After tRP is satisfied, set MRS, MR3[2] = 1 and MR3[1:0] = 00. This redirects all subsequent reads and loads the predefined pattern into the MPR. As soon as tMRD
and tMOD are satisfied, the MPR is available
3. Data WRITE operations are not allowed until the MPR returns to the normal
DRAM state
4. Issue a read with burst order information (all other address pins are Dont Care):
5.
6.
7.
8.
A[1:0] = 00 (data burst order is fixed starting at nibble)

A2 = 0 (for BL8, burst order is fixed as 0, 1, 2, 3, 4, 5, 6, 7)
A12 = 1 (use BL8)
After RL = AL + CL, the DRAM bursts out the predefined read calibration pattern
(0, 1, 0, 1, 0, 1, 0, 1)
The memory controller repeats the calibration reads until read data capture at
memory controller is optimized
After the last MPR READ burst and after tMPRR has been satisfied, issue MRS,
MR3[2] = 0, and MR3[1:0] = Dont Care to the normal DRAM state. All subsequent read and write accesses will be regular reads and writes from/to the DRAM
array
When tMRD and tMOD are satisfied from the last MRS, the regular DRAM commands (such as activate a memory bank for regular read or write access) are permitted
MODE REGISTER SET (MRS) Command

The mode registers are loaded via inputs BA[2:0], A[13:0]. BA[2:0] determine which
mode register is programmed:
BA2 = 0, BA1 = 0, BA0 = 0 for MR0

BA2 = 0, BA1 = 0, BA0 = 1 for MR1
BA2 = 0, BA1 = 1, BA0 = 0 for MR2
BA2 = 0, BA1 = 1, BA0 = 1 for MR3
The MRS command can only be issued (or re-issued) when all banks are idle and in the
precharged state (tRP is satisfied and no data bursts are in progress). The controller
must wait the specified time tMRD before initiating a subsequent operation such as an
ACTIVATE command (see Figure 50 (page 135)). There is also a restriction after issuing
an MRS command with regard to when the updated functions become available. This
parameter is specified by tMOD. Both tMRD and tMOD parameters are shown in Figure
50 (page 135) and Figure 51 (page 136). Violating either of these requirements will result
in unspecified operation.
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ZQ CALIBRATION Operation
ZQ CALIBRATION Operation
The ZQ CALIBRATION command is used to calibrate the DRAM output drivers (RON)
and ODT values (RTT) over process, voltage, and temperature, provided a dedicated
240 (1%) external resistor is connected from the DRAMs ZQ ball to V SSQ.
DDR3 SDRAM require a longer time to calibrate RON and ODT at power-up initialization
and self refresh exit, and a relatively shorter time to perform periodic calibrations.
DDR3 SDRAM defines two ZQ CALIBRATION commands: ZQCL and ZQCS. An example
of ZQ calibration timing is shown below.
All banks must be precharged and tRP must be met before ZQCL or ZQCS commands
can be issued to the DRAM. No other activities (other than issuing another ZQCL or
ZQCS command) can be performed on the DRAM channel by the controller for the duration of tZQinit or tZQoper. The quiet time on the DRAM channel helps accurately calibrate RON and ODT. After DRAM calibration is achieved, the DRAM should disable the
ZQ balls current consumption path to reduce power.
ZQ CALIBRATION commands can be issued in parallel to DLL RESET and locking time.
Upon self refresh exit, an explicit ZQCL is required if ZQ calibration is desired.
In dual-rank systems that share the ZQ resistor between devices, the controller must not
enable overlap of tZQinit, tZQoper, or tZQCS between ranks.
Figure 64: ZQ CALIBRATION Timing (ZQCL and ZQCS)
T0
T1
Ta0
Ta1
Ta2
Ta3
Tb0
Tb1
Tc0
Tc1
Tc2
ZQCL
NOP
NOP
NOP
Valid
Valid
ZQCS
NOP
NOP
NOP
Valid
Address
Valid
Valid
Valid
A10
Valid
Valid
Valid
CK#
CK
Command
CKE
Valid
Valid
Valid
ODT
Valid
Valid
Valid
DQ
Activities
High-Z
tZQinit
or tZQoper
High-Z
tZQCS
Indicates break
in time scale
Notes:
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Activities
Dont Care
1. CKE must be continuously registered HIGH during the calibration procedure.

2. ODT must be disabled via the ODT signal or the MRS during the calibration procedure.
3. All devices connected to the DQ bus should be High-Z during calibration.
155

ACTIVATE Operation
ACTIVATE Operation
Before any READ or WRITE commands can be issued to a bank within the DRAM, a row
in that bank must be opened (activated). This is accomplished via the ACTIVATE command, which selects both the bank and the row to be activated.
After a row is opened with an ACTIVATE command, a READ or WRITE command may
be issued to that row, subject to the tRCD specification. However, if the additive latency
is programmed correctly, a READ or WRITE command may be issued prior to tRCD
(MIN). In this operation, the DRAM enables a READ or WRITE command to be issued
after the ACTIVATE command for that bank, but prior to tRCD (MIN) with the requirement that (ACTIVATE-to-READ/WRITE) + AL tRCD (MIN) (see Posted CAS Additive
Latency). tRCD (MIN) should be divided by the clock period and rounded up to the next
whole number to determine the earliest clock edge after the ACTIVATE command on
which a READ or WRITE command can be entered. The same procedure is used to convert other specification limits from time units to clock cycles.
When at least one bank is open, any READ-to-READ command delay or WRITE-toWRITE command delay is restricted to tCCD (MIN).
A subsequent ACTIVATE command to a different row in the same bank can only be issued after the previous active row has been closed (precharged). The minimum time interval between successive ACTIVATE commands to the same bank is defined by tRC.
A subsequent ACTIVATE command to another bank can be issued while the first bank is
being accessed, which results in a reduction of total row-access overhead. The minimum time interval between successive ACTIVATE commands to different banks is defined by tRRD. No more than four bank ACTIVATE commands may be issued in a given
tFAW (MIN) period, and the tRRD (MIN) restriction still applies. The tFAW (MIN) parameter applies, regardless of the number of banks already opened or closed.
Figure 65: Example: Meeting tRRD (MIN) and tRCD (MIN)
T0
T1
T2
T3
T4
T5
T8
T9
T10
T11
Command
ACT
NOP
NOP
ACT
NOP
NOP
NOP
NOP
NOP
RD/WR
Address
Row
Row
Col
BA[2:0]
Bank x
Bank y
Bank y
CK#
CK
tRRD
tRCD
Indicates break
in time scale
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Dont Care

ACTIVATE Operation
Figure 66: Example: tFAW
CK#
T0
T1
T4
T5
T8
T9
T10
T11
T19
T20
ACT
NOP
ACT
NOP
ACT
NOP
ACT
NOP
NOP
ACT
CK
Command
Address
BA[2:0]
Row
Row
Row
Row
Row
Bank a
Bank b
Bank c
Bank d
Bank ey
tRRD
tFAW
Indicates break
in time scale
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Dont Care

READ Operation
READ Operation
READ bursts are initiated with a READ command. The starting column and bank addresses are provided with the READ command and auto precharge is either enabled or
disabled for that burst access. If auto precharge is enabled, the row being accessed is
automatically precharged at the completion of the burst. If auto precharge is disabled,
the row will be left open after the completion of the burst.
During READ bursts, the valid data-out element from the starting column address is
available READ latency (RL) clocks later. RL is defined as the sum of posted CAS additive
latency (AL) and CAS latency (CL) (RL = AL + CL). The value of AL and CL is programmable in the mode register via the MRS command. Each subsequent data-out element is
valid nominally at the next positive or negative clock edge (that is, at the next crossing
of CK and CK#). Figure 67 shows an example of RL based on a CL setting of 8 and an AL
setting of 0.
Figure 67: READ Latency
CK#
T0
T7
T8
T9
T10
T11
T12
T12
READ
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CK
Command
Address
Bank a,
Col n
CL = 8, AL = 0
DQS, DQS#
DO
n
DQ
Indicates break
in time scale
Notes:
Transitioning Data
Dont Care
1. DO n = data-out from column n.

2. Subsequent elements of data-out appear in the programmed order following DO n.
DQS, DQS# is driven by the DRAM along with the output data. The initial LOW state on
DQS and HIGH state on DQS# is known as the READ preamble (tRPRE). The LOW state
on DQS and the HIGH state on DQS#, coincident with the last data-out element, is
known as the READ postamble (tRPST). Upon completion of a burst, assuming no other
commands have been initiated, the DQ goes High-Z. A detailed explanation of tDQSQ
(valid data-out skew), tQH (data-out window hold), and the valid data window are depicted in Figure 78 (page 166). A detailed explanation of tDQSCK (DQS transition skew
to CK) is also depicted in Figure 78 (page 166).
Data from any READ burst may be concatenated with data from a subsequent READ
command to provide a continuous flow of data. The first data element from the new
burst follows the last element of a completed burst. The new READ command should be
issued tCCD cycles after the first READ command. This is shown for BL8 in Figure 68
(page 160). If BC4 is enabled, tCCD must still be met, which will cause a gap in the data
output, as shown in Figure 69 (page 160). Nonconsecutive READ data is reflected in
Figure 70 (page 161). DDR3 SDRAM does not allow interrupting or truncating any
READ burst.
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158

READ Operation
Data from any READ burst must be completed before a subsequent WRITE burst is allowed. An example of a READ burst followed by a WRITE burst for BL8 is shown in Figure 71 (page 161) (BC4 is shown in Figure 72 (page 162)). To ensure the READ data is
completed before the WRITE data is on the bus, the minimum READ-to-WRITE timing
is RL + tCCD - WL + 2 tCK.
A READ burst may be followed by a PRECHARGE command to the same bank, provided
auto precharge is not activated. The minimum READ-to-PRECHARGE command spacing to the same bank is four clocks and must also satisfy a minimum analog time from
the READ command. This time is called tRTP (READ-to-PRECHARGE). tRTP starts AL
cycles later than the READ command. Examples for BL8 are shown in Figure 73 (page
162) and BC4 in Figure 74 (page 163). Following the PRECHARGE command, a subsequent command to the same bank cannot be issued until tRP is met. The PRECHARGE
command followed by another PRECHARGE command to the same bank is allowed.
However, the precharge period will be determined by the last PRECHARGE command
issued to the bank.
If A10 is HIGH when a READ command is issued, the READ with auto precharge function is engaged. The DRAM starts an auto precharge operation on the rising edge, which
is AL + tRTP cycles after the READ command. DRAM support a tRAS lockout feature (see
Figure 76 (page 163)). If tRAS (MIN) is not satisfied at the edge, the starting point of the
auto precharge operation will be delayed until tRAS (MIN) is satisfied. If tRTP (MIN) is
not satisfied at the edge, the starting point of the auto precharge operation is delayed
until tRTP (MIN) is satisfied. In case the internal precharge is pushed out by tRTP, tRP
starts at the point at which the internal precharge happens (not at the next rising clock
edge after this event). The time from READ with auto precharge to the next ACTIVATE
command to the same bank is AL + (tRTP + tRP)*, where * means rounded up to the next
integer. In any event, internal precharge does not start earlier than four clocks after the
last 8n-bit prefetch.
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Figure 68: Consecutive READ Bursts (BL8)

CK#
T0
T1
READ
NOP
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
NOP
NOP
READ
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CK
Command1
tCCD
Address2
Bank,
Col n
Bank,
Col b
tRPRE
tRPST
DQS, DQS#
DQ3
DO
n
RL = 5
DO
n+1
DO
n+2
DO
n+3
DO
n+4
DO
n+5
DO
n+6
DO
n+7
DO
b
DO
b+1
DO
b+2
DO
b+3
DO
b+4
DO
b+5
DO
b+6
DO
b+7
RL = 5
Transitioning Data
Dont Care
1. NOP commands are shown for ease of illustration; other commands may be valid at these times.
2. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during READ command at T0
and T4.
3. DO n (or b) = data-out from column n (or column b).
4. BL8, RL = 5 (CL = 5, AL = 0).
Notes:
160
Figure 69: Consecutive READ Bursts (BC4)

T0
T1
READ
NOP
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
NOP
NOP
READ
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CK
Command1
tCCD
Address2
Bank,
Col n
Bank,
Col b
tRPRE
tRPST
tRPST
tRPRE
DQS, DQS#
DQ3
RL = 5
DO
n
DO
n+1
DO
n+2
DO
n+3
DO
b
DO
b+1
DO
b+2
DO
b+3
RL = 5
Transitioning Data
Notes:
Dont Care
2. The BC4 setting is activated by either MR0[1:0] = 10 or MR0[1:0] = 01 and A12 = 0 during READ command at T0
and T4.
3. DO n (or b) = data-out from column n (or column b).
4. BC4, RL = 5 (CL = 5, AL = 0).

READ Operation
CK#
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Figure 70: Nonconsecutive READ Bursts

CK#
T0
T1
T2
T3
T4
READ
NOP
NOP
NOP
NOP
T5
T6
T7
READ
NOP
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CK
Command
Address
Bank a,
Col n
NOP
NOP
Bank a,
Col b
CL = 8
CL = 8
DQS, DQS#
DO
n
DQ
DO
b
Transitioning Data
Notes:
1.
2.
3.
4.
Dont Care
AL = 0, RL = 8.
DO n (or b) = data-out from column n (or column b).
Seven subsequent elements of data-out appear in the programmed order following DO n.
Seven subsequent elements of data-out appear in the programmed order following DO b.
Figure 71: READ (BL8) to WRITE (BL8)

161
CK#
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
READ
NOP
NOP
NOP
NOP
NOP
WRITE
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CK
Command1
Address2
tBL
Bank,
Col n
tWR
= 4 clocks
tWR
Bank,
Col b
tRPRE
tRPST
tWPRE
tWPST
DQS, DQS#
DO
n
DQ3
RL = 5
DO
n+1
DO
n+2
DO
n+3
DO
n+4
DO
n+5
DO
n+6
DO
n+7
DI
n
DI
n+1
DI
DI
n+2 n+3
DI
n+4
DI
n+5
DI
n+6
Transitioning Data
Notes:
DI
n+7
WL = 5
Dont Care
2. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during the READ command at
T0, and the WRITE command at T6.
3. DO n = data-out from column, DI b = data-in for column b.
4. BL8, RL = 5 (AL = 0, CL = 5), WL = 5 (AL = 0, CWL = 5).

READ Operation
READ-to-WRITE command delay = RL + tCCD + 2tCK - WL
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Figure 72: READ (BC4) to WRITE (BC4) OTF

T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
READ
NOP
NOP
NOP
WRITE
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CK#
CK
Command1
READ-to-WRITE command delay = RL + tCCD/2 + 2tCK - WL
Address2
Bank,
Col n
tBL
tWR
= 4 clocks
tWTR
Bank,
Col b
tRPRE
tRPST
tWPRE
tWPST
DQS, DQS#
DO
n
DQ3
RL = 5
DO
n+ 1
DO
n+ 2
DO
n+3
DI
n
DI
n+2
DI
n+ 1
DI
n+ 3
WL = 5
Transitioning Data
Dont Care
2. The BC4 OTF setting is activated by MR0[1:0] and A12 = 0 during READ command at T0 and WRITE command at
T4.
3. DO n = data-out from column n; DI n = data-in from column b.
4. BC4, RL = 5 (AL - 0, CL = 5), WL = 5 (AL = 0, CWL = 5).
Notes:
162
CK#
T0
T1
T2
T3
T4
READ
NOP
NOP
NOP
NOP
T5
T6
T7
T8
T9
T10
T11
T12
PRE
NOP
NOP
NOP
NOP
NOP
NOP
NOP
T13
T14
T15
T16
T17
ACT
NOP
NOP
NOP
NOP
CK
Command
Address
Bank a,
Col n
Bank a,
(or all)
Bank a,
Row b
tRTP
tRP
DQS, DQS#
DO
n
DQ
DO
n+1
DO
n+2
DO
n+3
DO
n+4
DO
n+5
DO
n+6
DO
n+7
tRAS
Transitioning Data
Dont Care

READ Operation
Figure 73: READ to PRECHARGE (BL8)
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Figure 74: READ to PRECHARGE (BC4)

CK#
T0
T1
T2
T3
T4
READ
NOP
NOP
NOP
NOP
T5
T6
T7
T8
T9
T10
T11
T12
PRE
NOP
NOP
NOP
NOP
NOP
NOP
NOP
T13
T14
T15
T16
T17
ACT
NOP
NOP
NOP
NOP
CK
Command
Address
Bank a,
Col n
Bank a,
(or all)
Bank a,
Row b
tRP
tRTP
DQS, DQS#
DO
n
DQ
DO
n+1
DO
n+2
DO
n+3
tRAS
Transitioning Data
Dont Care
Figure 75: READ to PRECHARGE (AL = 5, CL = 6)

CK#
T0
T1
T2
T3
T4
T5
T6
T7
T8
READ
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
T9
T10
T11
T12
T13
T14
PRE
NOP
NOP
NOP
NOP
NOP
T15
CK
Command
Address
Bank a,
Col n
Bank a,
(or all)
tRTP
AL = 5
ACT
Bank a,
Row b
tRP
DQS, DQS#
163
DO
n
DQ
DO
n+2
DO
n+1
DO
n+3
CL = 6
tRAS
Transitioning Data
Dont Care
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
Command
READ
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Address
Bank a,
Col n
CK#
Ta0
CK
NOP
ACT
Bank a,
Row b
AL = 4
tRTP
(MIN)
DQS, DQS#
DO
n
DQ
DO
n+1
DO
n+2
DO
n+3
CL = 6
tRAS
tRP
(MIN)
Indicates break
in time scale
Transitioning Data
Dont Care

READ Operation
Figure 76: READ with Auto Precharge (AL = 4, CL = 6)

READ Operation
DQS to DQ output timing is shown in Figure 77 (page 165). The DQ transitions between
valid data outputs must be within tDQSQ of the crossing point of DQS, DQS#. DQS must
also maintain a minimum HIGH and LOW time of tQSH and tQSL. Prior to the READ
preamble, the DQ balls will either be floating or terminated, depending on the status of
the ODT signal.
Figure 78 (page 166) shows the strobe-to-clock timing during a READ. The crossing
point DQS, DQS# must transition within tDQSCK of the clock crossing point. The data
out has no timing relationship to CK, only to DQS, as shown in Figure 78 (page 166).
Figure 78 (page 166) also shows the READ preamble and postamble. Typically, both
DQS and DQS# are High-Z to save power (VDDQ). Prior to data output from the DRAM,
DQS is driven LOW and DQS# is HIGH for tRPRE. This is known as the READ preamble.
The READ postamble, tRPST, is one half clock from the last DQS, DQS# transition. During the READ postamble, DQS is driven LOW and DQS# is HIGH. When complete, the
DQ is disabled or continues terminating, depending on the state of the ODT signal. Figure 81 (page 168) demonstrates how to measure tRPST.
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Figure 77: Data Output Timing tDQSQ and Data Valid Window
CK#
T0
T1
T2
READ
NOP
NOP
T3
T4
T5
T6
T7
T8
T9
T10
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CK
Command1
RL = AL + CL
Address2
Bank,
Col n
tDQSQ
tDQSQ
(MAX)
tLZDQ (MIN)
(MAX)
tRPST
tHZDQ
(MAX)
DQS, DQS#
tRPRE
tQH
DO
n
DQ3 (last data valid)

DO
n
DQ3 (first data no longer valid)
tQH
DO
DO
DO
DO
DO
DO
DO
n+1
n+2
n+3
n+4
n+5
n+6
n+7
DO
DO
DO
DO
DO
DO
DO
n+1
n+2
n+3
n+4
n+5
n+6
n+7
DO
n
All DQ collectively
Data valid
DO
n+1
DO
n+2
DO
n+3
DO
n+4
DO
n+5
DO
n+6
DO
n+7
Data valid
Dont Care
165
Notes:

READ Operation
2. The BL8 setting is activated by either MR0[1, 0] = 0, 0 or MR0[0, 1] = 0, 1 and A12 = 1 during READ command at
T0.
3. DO n = data-out from column n.
4. BL8, RL = 5 (AL = 0, CL = 5).
5. Output timings are referenced to VDDQ/2 and DLL on and locked.
6. tDQSQ defines the skew between DQS, DQS# to data and does not define DQS, DQS# to CK.
7. Early data transitions may not always happen at the same DQ. Data transitions of a DQ can be early or late within
a burst.

READ Operation
tHZ
and tLZ transitions occur in the same access time as valid data transitions. These
parameters are referenced to a specific voltage level that specifies when the device output is no longer driving tHZDQS and tHZDQ, or begins driving tLZDQS, tLZDQ. Figure
79 (page 167) shows a method of calculating the point when the device is no longer
driving tHZDQS and tHZDQ, or begins driving tLZDQS, tLZDQ, by measuring the signal
at two different voltages. The actual voltage measurement points are not critical as long
as the calculation is consistent. The parameters tLZDQS, tLZDQ, tHZDQS, and tHZDQ
are defined as single-ended.
Figure 78: Data Strobe Timing READs
RL measured
to this point
T0
CK
T1
T2
T3
T4
T5
T6
CK#
tDQSCK
tLZDQS
tDQSCK
(MIN)
(MIN)
tQSH
tDQSCK
(MIN)
tQSL
tQSH
tDQSCK
(MIN)
tHZDQS
(MIN)
(MIN)
tQSL
DQS, DQS#
early strobe
tRPST
tRPRE
Bit 0
tLZDQS
Bit 1
tDQSCK
(MAX)
Bit 2
Bit 3
tDQSCK
(MAX)
Bit 4
Bit 5
tDQSCK
(MAX)
Bit 6
Bit 7
tDQSCK
(MAX)
tHZDQS
(MAX)
(MAX)
tRPST
DQS, DQS#
late strobe
tQSH
tRPRE
Bit 0
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tQSL
Bit 1
tQSL
tQSH
Bit 2
166
Bit 3
Bit 4
Bit 5
Bit 6
Bit 7

READ Operation
Figure 79: Method for Calculating tLZ and tHZ
VOH - xmV
VTT + 2xmV
VOH - 2xmV
VTT + xmV
tLZDQS, tLZDQ
tHZDQS, tHZDQ
T2
T1
tHZDQS, tHZDQ
VOL + 2xmV
VTT - xmV
VOL + xmV
VTT - 2xmV
T1
T2
tLZDQS, tLZDQ
end point = 2 T1 - T2
begin point = 2 T1 - T2
1. Within a burst, the rising strobe edge is not necessarily fixed at tDQSCK (MIN) or tDQSCK
(MAX). Instead, the rising strobe edge can vary between tDQSCK (MIN) and tDQSCK
(MAX).
2. The DQS HIGH pulse width is defined by tQSH, and the DQS LOW pulse width is defined
by tQSL. Likewise, tLZDQS (MIN) and tHZDQS (MIN) are not tied to tDQSCK (MIN) (early
strobe case), and tLZDQS (MAX) and tHZDQS (MAX) are not tied to tDQSCK (MAX) (late
strobe case); however, they tend to track one another.
3. The minimum pulse width of the READ preamble is defined by tRPRE (MIN). The minimum pulse width of the READ postamble is defined by tRPST (MIN).
Notes:
Figure 80: tRPRE Timing

CK
VTT
CK#
tA
tB
DQS
VTT
Single-ended signal provided

as background information
tC
tD
VTT
DQS#
Single-ended signal provided
T1
begins
tRPRE
DQS - DQS#
tRPRE
T2
ends
Resulting differential
signal relevant for
tRPRE specification
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0V
tRPRE
167

READ Operation
Figure 81: tRPST Timing
CK
VTT
CK#
tA
DQS
Single-ended signal, provided
tC
VTT
tD
DQS#
VTT
Single-ended signal, provided

tRPST
DQS - DQS#
signal relevant for
tRPST specification
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T1
begins
tRPST
0V
T2
ends
tRPST
168

WRITE Operation
WRITE Operation
WRITE bursts are initiated with a WRITE command. The starting column and bank addresses are provided with the WRITE command, and auto precharge is either enabled or
disabled for that access. If auto precharge is selected, the row being accessed is precharged at the end of the WRITE burst. If auto precharge is not selected, the row will
remain open for subsequent accesses. After a WRITE command has been issued, the
WRITE burst may not be interrupted. For the generic WRITE commands used in Figure
84 (page 171) through Figure 92 (page 176), auto precharge is disabled.
During WRITE bursts, the first valid data-in element is registered on a rising edge of
DQS following the WRITE latency (WL) clocks later and subsequent data elements will
be registered on successive edges of DQS. WRITE latency (WL) is defined as the sum of
posted CAS additive latency (AL) and CAS WRITE latency (CWL): WL = AL + CWL. The
values of AL and CWL are programmed in the MR0 and MR2 registers, respectively. Prior
to the first valid DQS edge, a full cycle is needed (including a dummy crossover of DQS,
DQS#) and specified as the WRITE preamble shown in Figure 84 (page 171). The half
cycle on DQS following the last data-in element is known as the WRITE postamble.
The time between the WRITE command and the first valid edge of DQS is WL clocks
tDQSS. Figure 85 (page 172) through Figure 92 (page 176) show the nominal case
where tDQSS = 0ns; however, Figure 84 (page 171) includes tDQSS (MIN) and tDQSS
(MAX) cases.
Data may be masked from completing a WRITE using data mask. The data mask occurs
on the DM ball aligned to the WRITE data. If DM is LOW, the WRITE completes normally. If DM is HIGH, that bit of data is masked.
Upon completion of a burst, assuming no other commands have been initiated, the DQ
will remain High-Z, and any additional input data will be ignored.
Data for any WRITE burst may be concatenated with a subsequent WRITE command to
provide a continuous flow of input data. The new WRITE command can be tCCD clocks
following the previous WRITE command. The first data element from the new burst is
applied after the last element of a completed burst. Figure 85 (page 172) and Figure 86
(page 172) show concatenated bursts. An example of nonconsecutive WRITEs is shown
in Figure 87 (page 173).
Data for any WRITE burst may be followed by a subsequent READ command after tWTR
has been met (see Figure 88 (page 173), Figure 89 (page 174), and Figure 90 (page
175)).
Data for any WRITE burst may be followed by a subsequent PRECHARGE command,
providing tWR has been met, as shown in Figure 91 (page 176) and Figure 92 (page
176).
Both tWTR and tWR starting time may vary, depending on the mode register settings
(fixed BC4, BL8 versus OTF).
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169

WRITE Operation
Figure 82: tWPRE Timing
CK
VTT
CK#
T1
begins
tWPRE
DQS - DQS#
0V
tWPRE
T2
signal relevant for
tWPRE specification
tWPRE
ends
Figure 83: tWPST Timing

CK
VTT
CK#
tWPST
DQS - DQS#
signal relevant for
tWPST specification
0V
T1
begins
tWPST
T2
ends
tWPST
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170

WRITE Operation
Figure 84: WRITE Burst
CK#
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
WRITE
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CK
Command1
WL = AL + CWL
Address2
Bank,
Col n
tDQSS
tWPRE
(MIN)
tDQSS tDSH
tDSH
tDSH
tDSH tWPST
DQS, DQS#
tDQSH
tDQSL
tDQSH
DI
n
DQ3
tDQSS
DI
n+1
tWPRE
(NOM)
tDQSL
tDQSH
DI
n+2
tDQSL
DI
n+3
tDSH
tDQSH
DI
n+4
tDQSL
DI
n+5
tDSH
tDQSH
DI
n+6
tDQSL
DI
n+7
tDSH
tDSH
tWPST
tDQSH
tDQSL
DQS, DQS#
tDQSH
tDQSL
tDQSH
tDSS
tDQSH
tDSS
DI
n
DQ3
tDQSL
DI
n+1
tDQSL
tDQSH
tDQSL
tDSS
DI
n+2
DI
n+3
tDSS
DI
n+4
DI
n+5
tDSS
DI
n+6
DI
n+7
tDQSS
tDQSS
tWPRE
(MAX)
tWPST
DQS, DQS#
tDQSH
tDQSH
tDQSL
tDSS
DI
n
DQ3
tDQSL
tDQSH
tDSS
DI
n+1
tDQSL
tDQSH
tDSS
DI
n+2
DI
n+3
tDQSL
tDQSH
tDSS
DI
n+4
DI
n+5
tDQSL
tDSS
DI
n+6
DI
n+7
Transitioning Data
Notes:
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Dont Care
1. NOP commands are shown for ease of illustration; other commands may be valid at
these times.
2. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during
the WRITE command at T0.
3. DI n = data-in for column n.
4. BL8, WL = 5 (AL = 0, CWL = 5).
5. tDQSS must be met at each rising clock edge.
6. tWPST is usually depicted as ending at the crossing of DQS, DQS#; however, tWPST actually ends when DQS no longer drives LOW and DQS# no longer drives HIGH.
171
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Figure 85: Consecutive WRITE (BL8) to WRITE (BL8)

CK#
T0
T1
WRITE
NOP
T2
T3
T4
T5
T6
T7
T8
T9
T10
NOP
NOP
WRITE
NOP
NOP
NOP
NOP
NOP
NOP
T11
T12
T13
NOP
NOP
NOP
T14
CK
Command1
tBL
tCCD
NOP
tWR
= 4 clocks
tWTR
Address2
Valid
Valid
tWPST
tWPRE
DQS, DQS#
DI
n
DQ3
DI
n+1
DI
n+2
DI
n+3
DI
n+4
DI
n+5
DI
n+6
DI
n+7
DI
b
DI
b+1
DI
b+2
DI
b+3
DI
b+4
DI
b+5
DI
b+6
DI
b+7
WL = 5
WL = 5
Transitioning Data
Dont Care
2. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during the WRITE commands at
T0 and T4.
3. DI n (or b) = data-in for column n (or column b).
4. BL8, WL = 5 (AL = 0, CWL = 5).
Notes:
172
Figure 86: Consecutive WRITE (BC4) to WRITE (BC4) via OTF

CK#
T1
WRITE
NOP
T2
T3
T4
T5
T6
T7
T8
T9
T10
NOP
NOP
WRITE
NOP
NOP
NOP
NOP
NOP
NOP
T11
T12
T13
NOP
NOP
NOP
T14
Command1
tCCD
tBL
NOP
tWR
= 4 clocks
tWTR
Address2
Valid
Valid
tWPST
tWPRE
tWPRE
tWPST
DQS, DQS#
DI
n
DQ3
DI
n+1
DI
n+2
DI
n+3
DI
b
DI
b+1
DI
b+2
DI
b+3
WL = 5
WL = 5
Transitioning Data
Notes:
1.
2.
3.
4.
5.
NOP commands are shown for ease of illustration; other commands may be valid at these times.
BC4, WL = 5 (AL = 0, CWL = 5).
DI n (or b) = data-in for column n (or column b).
The BC4 setting is activated by MR0[1:0] = 01 and A12 = 0 during the WRITE command at T0 and T4.
If set via MRS (fixed) tWR and tWTR would start T11 (2 cycles earlier).
Dont Care

WRITE Operation
T0
CK
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Figure 87: Nonconsecutive WRITE to WRITE

T0
T1
T2
T3
T4
Command
WRITE
NOP
NOP
NOP
NOP
Address
Valid
CK#
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CK
WRITE
NOP
NOP
NOP
Valid
WL = CWL + AL = 7
WL = CWL + AL = 7
DQS, DQS#
DI
n
DQ
DI
n+1
DI
n+2
DI
n+3
DI
n+4
DI
n+5
DI
n+6
DI
n+7
DI
b
DI
b+1
DI
b+2
DI
b+3
DI
b+4
DI
b+5
DI
b+6
DI
b+7
DM
Transitioning Data
Notes:
1.
2.
3.
4.
Don't Care
DI n (or b) = data-in for column n (or column b).

Seven subsequent elements of data-in are applied in the programmed order following DO n.
Each WRITE command may be to any bank.
Shown for WL = 7 (CWL = 7, AL = 0).
Figure 88: WRITE (BL8) to READ (BL8)

173
CK#
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
WRITE
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
T11
Ta0
NOP
READ
CK
Command1
tWTR2
Valid
Valid
tWPRE
tWPST
DQS, DQS#
DI
n
DQ4
DI
n+1
DI
n+2
DI
n+3
DI
n+4
DI
n+5
DI
n+6
DI
n+7
WL = 5
Indicates break
in time scale
Notes:
Transitioning Data
Dont Care
2. tWTR controls the WRITE-to-READ delay to the same device and starts with the first rising clock edge after the last
write data shown at T9.
3. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and MR0[12] = 1 during the WRITE command
at T0. The READ command at Ta0 can be either BC4 or BL8, depending on MR0[1:0] and the A12 status at Ta0.
5. RL = 5 (AL = 0, CL = 5), WL = 5 (AL = 0, CWL = 5).

WRITE Operation
Address3
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Figure 89: WRITE to READ (BC4 Mode Register Setting)

T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
Ta0
WRITE
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
READ
CK#
CK
Command1
tWTR2
Address3
Valid
Valid
tWPRE
tWPST
DQS, DQS#
DI
n
DQ4
DI
n+1
DI
n+2
DI
n+3
WL = 5
Indicates break
in time scale
Notes:
Transitioning Data
Dont Care
174

WRITE Operation
2. tWTR controls the WRITE-to-READ delay to the same device and starts with the first rising clock edge after the last
write data shown at T7.
3. The fixed BC4 setting is activated by MR0[1:0] = 10 during the WRITE command at T0 and the READ command at
Ta0.
5. BC4 (fixed), WL = 5 (AL = 0, CWL = 5), RL = 5 (AL = 0, CL = 5).
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Figure 90: WRITE (BC4 OTF) to READ (BC4 OTF)

CK#
T0
T1
T2
T3
T4
T5
T6
WRITE
NOP
NOP
NOP
NOP
NOP
NOP
T7
T8
T9
T10
NOP
NOP
NOP
NOP
T11
Tn
NOP
READ
CK
Command1
tBL
Address3
= 4 clocks
tWTR2
Valid
Valid
tWPRE
tWPST
DQS, DQS#
DQ4
WL = 5
DI
n
DI
n+1
DI
n+2
DI
n+3
RL = 5
Indicates break
in time scale
Notes:
Transitioning Data
Dont Care
175
2. tWTR controls the WRITE-to-READ delay to the same device and starts after tBL.
3. The BC4 OTF setting is activated by MR0[1:0] = 01 and A12 = 0 during the WRITE command at T0 and the READ
command at Tn.
5. BC4, RL = 5 (AL = 0, CL = 5), WL = 5 (AL = 0, CWL = 5).

WRITE Operation

WRITE Operation
Figure 91: WRITE (BL8) to PRECHARGE
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
Ta0
Ta1
Command
WRITE
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
PRE
Address
Valid
CK#
CK
Valid
tWR
WL = AL + CWL
DQS, DQS#
DI
n
DQ BL8
DI
n+1
DI
n+2
DI
n+3
DI
n+4
DI
n+5
DI
n+6
DI
n+7
Indicates break
in time scale
Notes:
Transitioning Data
Dont Care
1. DI n = data-in from column n.

2. Seven subsequent elements of data-in are applied in the programmed order following
DO n.
3. Shown for WL = 7 (AL = 0, CWL = 7).
Figure 92: WRITE (BC4 Mode Register Setting) to PRECHARGE

T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
Ta0
Ta1
Command
WRITE
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
PRE
Address
Valid
CK#
CK
Valid
tWR
WL = AL + CWL
DQS, DQS#
DI
n
DQ BC4
DI
n+1
DI
n+2
DI
n+3
Indicates break
in time scale
Notes:
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Transitioning Data
Dont Care
these times.
2. The write recovery time (tWR) is referenced from the first rising clock edge after the last
write data is shown at T7. tWR specifies the last burst WRITE cycle until the PRECHARGE
command can be issued to the same bank.
3. The fixed BC4 setting is activated by MR0[1:0] = 10 during the WRITE command at T0.
5. BC4 (fixed), WL = 5, RL = 5.
176

WRITE Operation
Figure 93: WRITE (BC4 OTF) to PRECHARGE
CK#
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
WRITE
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Tn
CK
Command1
PRE
tWR2
Address3
Bank,
Col n
Valid
tWPRE
tWPST
DQS, DQS#
DI
n
DQ4
DI
n+1
DI
n+2
DI
n+3
WL = 5
Indicates break
in time scale
Notes:
Transitioning Data
Dont Care
these times.
2. The write recovery time (tWR) is referenced from the rising clock edge at T9. tWR specifies the last burst WRITE cycle until the PRECHARGE command can be issued to the same
bank.
3. The BC4 setting is activated by MR0[1:0] = 01 and A12 = 0 during the WRITE command
at T0.
5. BC4 (OTF), WL = 5, RL = 5.
DQ Input Timing
Figure 84 (page 171) shows the strobe-to-clock timing during a WRITE burst. DQS,
DQS# must transition within 0.25tCK of the clock transitions, as limited by tDQSS. All
data and data mask setup and hold timings are measured relative to the DQS, DQS#
crossing, not the clock crossing.
The WRITE preamble and postamble are also shown in Figure 84 (page 171). One clock
prior to data input to the DRAM, DQS must be HIGH and DQS# must be LOW. Then for
a half clock, DQS is driven LOW (DQS# is driven HIGH) during the WRITE preamble,
tWPRE. Likewise, DQS must be kept LOW by the controller after the last data is written
to the DRAM during the WRITE postamble, tWPST.
Data setup and hold times are also shown in Figure 84 (page 171). All setup and hold
times are measured from the crossing points of DQS and DQS#. These setup and hold
values pertain to data input and data mask input.
Additionally, the half period of the data input strobe is specified by tDQSH and tDQSL.
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177

WRITE Operation
Figure 94: Data Input Timing
DQS, DQS#
tWPRE
DQ
tDQSH
tWPST
tDQSL
DI
b
DM
tDS
tDH
tDS
tDH
Transitioning Data
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178
Dont Care

PRECHARGE Operation
PRECHARGE Operation
Input A10 determines whether one bank or all banks are to be precharged and, in the
case where only one bank is to be precharged, inputs BA[2:0] select the bank.
When all banks are to be precharged, inputs BA[2:0] are treated as Dont Care. After a
bank is precharged, it is in the idle state and must be activated prior to any READ or
WRITE commands being issued.
SELF REFRESH Operation

The SELF REFRESH operation is initiated like a REFRESH command except CKE is LOW.
The DLL is automatically disabled upon entering SELF REFRESH and is automatically
enabled and reset upon exiting SELF REFRESH.
All power supply inputs (including V REFCA and V REFDQ) must be maintained at valid levels upon entry/exit and during self refresh mode operation. V REFDQ may float or not
drive V DDQ/2 while in self refresh mode under certain conditions:
VSS < V REFDQ < V DD is maintained.

VREFDQ is valid and stable prior to CKE going back HIGH.
The first WRITE operation may not occur earlier than 512 clocks after V REFDQ is valid.
All other self refresh mode exit timing requirements are met.
The DRAM must be idle with all banks in the precharge state (tRP is satisfied and no
bursts are in progress) before a self refresh entry command can be issued. ODT must
also be turned off before self refresh entry by registering the ODT ball LOW prior to the
self refresh entry command (see On-Die Termination (ODT) ( for timing requirements).
If RTT,nom and RTT(WR) are disabled in the mode registers, ODT can be a Dont Care.
After the self refresh entry command is registered, CKE must be held LOW to keep the
DRAM in self refresh mode.
After the DRAM has entered self refresh mode, all external control signals, except CKE
and RESET#, are Dont Care. The DRAM initiates a minimum of one REFRESH command internally within the tCKE period when it enters self refresh mode.
The requirements for entering and exiting self refresh mode depend on the state of the
clock during self refresh mode. First and foremost, the clock must be stable (meeting
tCK specifications) when self refresh mode is entered. If the clock remains stable and
the frequency is not altered while in self refresh mode, then the DRAM is allowed to exit
self refresh mode after tCKESR is satisfied (CKE is allowed to transition HIGH tCKESR
later than when CKE was registered LOW). Since the clock remains stable in self refresh
mode (no frequency change), tCKSRE and tCKSRX are not required. However, if the
clock is altered during self refresh mode (if it is turned-off or its frequency changes),
then tCKSRE and tCKSRX must be satisfied. When entering self refresh mode, tCKSRE
must be satisfied prior to altering the clock's frequency. Prior to exiting self refresh
mode, tCKSRX must be satisfied prior to registering CKE HIGH.
When CKE is HIGH during self refresh exit, NOP or DES must be issued for tXS time. tXS
is required for the completion of any internal refresh already in progress and must be
satisfied before a valid command not requiring a locked DLL can be issued to the device. tXS is also the earliest time self refresh re-entry may occur. Before a command requiring a locked DLL can be applied, a ZQCL command must be issued, tZQOPER timing must be met, and tXSDLL must be satisfied. ODT must be off during tXSDLL.
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179

SELF REFRESH Operation
Figure 95: Self Refresh Entry/Exit Timing
T0
T1
T2
Ta0
Tb0
Tc0
Tc1
Td0
Te0
Tf0
Valid
Valid
CK#
CK
tCKSRX1
tCKSRE1
tIH
tCPDED
tIS
tIS
CKE
tCKESR
(MIN)1
tIS
ODT2
Valid
ODTL
RESET#2
Command
NOP
SRE (REF)3
NOP4
SRX (NOP)
NOP5
Address
tRP8
Valid 6
Valid 7
Valid
Valid
tXS6, 9
tXSDLL7, 9
Enter self refresh mode

(synchronous)
Exit self refresh mode

(asynchronous)
Indicates break
in time scale
Notes:
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Dont Care
1. The clock must be valid and stable, meeting tCK specifications at least tCKSRE after entering self refresh mode, and at least tCKSRX prior to exiting self refresh mode, if the
clock is stopped or altered between states Ta0 and Tb0. If the clock remains valid and
unchanged from entry and during self refresh mode, then tCKSRE and tCKSRX do not
apply; however, tCKESR must be satisfied prior to exiting at SRX.
2. ODT must be disabled and RTT off prior to entering self refresh at state T1. If both
RTT,nom and RTT(WR) are disabled in the mode registers, ODT can be a Dont Care.
3. Self refresh entry (SRE) is synchronous via a REFRESH command with CKE LOW.
4. A NOP or DES command is required at T2 after the SRE command is issued prior to the
inputs becoming Dont Care.
5. NOP or DES commands are required prior to exiting self refresh mode until state Te0.
6. tXS is required before any commands not requiring a locked DLL.
7. tXSDLL is required before any commands requiring a locked DLL.
8. The device must be in the all banks idle state prior to entering self refresh mode. For
example, all banks must be precharged, tRP must be met, and no data bursts can be in
progress.
9. Self refresh exit is asynchronous; however, tXS and tXSDLL timings start at the first rising
clock edge where CKE HIGH satisfies tISXR at Tc1. tCKSRX timing is also measured so that
tISXR is satisfied at Tc1.
180

Extended Temperature Usage
Extended Temperature Usage

Microns DDR3 SDRAM support the optional extended case temperature (TC) range of
0C to 95C. Thus, the SRT and ASR options must be used at a minimum.
The extended temperature range DRAM must be refreshed externally at 2x (double refresh) anytime the case temperature is above 85C (and does not exceed 95C). The external refresh requirement is accomplished by reducing the refresh period from 64ms to
32ms. However, self refresh mode requires either ASR or SRT to support the extended
temperature. Thus, either ASR or SRT must be enabled when T C is above 85C or self
refresh cannot be used until T C is at or below 85C. Table 77 summarizes the two extended temperature options and Table 78 summarizes how the two extended temperature
options relate to one another.
Table 77: Self Refresh Temperature and Auto Self Refresh Description
Field
MR2 Bits
Description
Self Refresh Temperature (SRT)

SRT
If ASR is disabled (MR2[6] = 0), SRT must be programmed to indicate TOPER during self refresh:
*MR2[7] = 0: Normal operating temperature range (0C to 85C)
*MR2[7] = 1: Extended operating temperature range (0C to 95C)
If ASR is enabled (MR2[7] = 1), SRT must be set to 0, even if the extended temperature range is
supported
*MR2[7] = 0: SRT is disabled
Auto Self Refresh (ASR)

ASR
When ASR is enabled, the DRAM automatically provides SELF REFRESH power management functions, (refresh rate for all supported operating temperature values)
* MR2[6] = 1: ASR is enabled (M7 must = 0)
When ASR is not enabled, the SRT bit must be programmed to indicate TOPER during SELF REFRESH
operation
* MR2[6] = 0: ASR is disabled; must use manual self refresh temperature (SRT)
Table 78: Self Refresh Mode Summary

MR2[6] MR2[7]
(ASR)
(SRT) SELF REFRESH Operation
Permitted Operating Temperature

Range for Self Refresh Mode
Self refresh mode is supported in the normal temperature

range
Self refresh mode is supported in normal and extended temper- Normal and extended (0C to 95C)
ature ranges; When SRT is enabled, it increases self refresh
power consumption
Self refresh mode is supported in normal and extended temper- Normal and extended (0C to 95C)
ature ranges; Self refresh power consumption may be temperature-dependent
Illegal
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181
Normal (0C to 85C)

Power-Down Mode
Power-Down Mode
Power-down is synchronously entered when CKE is registered LOW coincident with a
NOP or DES command. CKE is not allowed to go LOW while an MRS, MPR, ZQCAL,
READ, or WRITE operation is in progress. CKE is allowed to go LOW while any of the
other legal operations (such as ROW ACTIVATION, PRECHARGE, auto precharge, or REFRESH) are in progress. However, the power-down IDD specifications are not applicable
until such operations have completed. Depending on the previous DRAM state and the
command issued prior to CKE going LOW, certain timing constraints must be satisfied
(as noted in Table 79). Timing diagrams detailing the different power-down mode entry
and exits are shown in Figure 96 (page 184) through Figure 105 (page 188).
Table 79: Command to Power-Down Entry Parameters
DRAM Status
Last Command Prior to

CKE LOW1
Parameter (Min)
Parameter Value
Figure
Idle or active
ACTIVATE
tACTPDEN
1tCK
Figure 103 (page 187)
Idle or active
PRECHARGE
tPRPDEN
1tCK
READ or READAP
tRDPDEN
Active
WRITE: BL8OTF, BL8MRS,

BC4OTF
tWRPDEN
Active
WRITE: BC4MRS
Active
Active
WRITEAP: BL8OTF, BL8MRS,

BC4OTF
Active
WRITEAP: BC4MRS
tWRAPDEN

1tCK
tWR/tCK
WL + 2tCK + tWR/tCK
RL +
WL +
4tCK
4tCK
1tCK
WL + 2tCK + WR + 1tCK
1tCK
WL +
4tCK
+ WR +
Idle
REFRESH
tREFPDEN
Power-down
REFRESH
tXPDLL
Greater of 10tCK or 24ns
MODE REGISTER SET
tMRSPDEN
tMOD
Idle
Note:
1. If slow-exit mode precharge power-down is enabled and entered, ODT becomes asynchronous tANPD prior to CKE going LOW and remains asynchronous until tANPD +
tXPDLL after CKE goes HIGH.
Entering power-down disables the input and output buffers, excluding CK, CK#, ODT,
CKE, and RESET#. NOP or DES commands are required until tCPDED has been satisfied, at which time all specified input/output buffers are disabled. The DLL should be in
a locked state when power-down is entered for the fastest power-down exit timing. If
the DLL is not locked during power-down entry, the DLL must be reset after exiting
power-down mode for proper READ operation as well as synchronous ODT operation.
During power-down entry, if any bank remains open after all in-progress commands are
complete, the DRAM will be in active power-down mode. If all banks are closed after all
in-progress commands are complete, the DRAM will be in precharge power-down
mode. Precharge power-down mode must be programmed to exit with either a slow exit
mode or a fast exit mode. When entering precharge power-down mode, the DLL is
turned off in slow exit mode or kept on in fast exit mode.
The DLL also remains on when entering active power-down. ODT has special timing
constraints when slow exit mode precharge power-down is enabled and entered. Refer
to Asynchronous ODT Mode (page 206) for detailed ODT usage requirements in slow
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Power-Down Mode
exit mode precharge power-down. A summary of the two power-down modes is listed in
Table 80 (page 183).
While in either power-down state, CKE is held LOW, RESET# is held HIGH, and a stable
clock signal must be maintained. ODT must be in a valid state but all other input signals
are Dont Care. If RESET# goes LOW during power-down, the DRAM will switch out of
power-down mode and go into the reset state. After CKE is registered LOW, CKE must
remain LOW until tPD (MIN) has been satisfied. The maximum time allowed for powerdown duration is tPD (MAX) (9 tREFI).
The power-down states are synchronously exited when CKE is registered HIGH (with a
required NOP or DES command). CKE must be maintained HIGH until tCKE has been
satisfied. A valid, executable command may be applied after power-down exit latency,
tXP, and tXPDLL have been satisfied. A summary of the power-down modes is listed below.
For specific CKE-intensive operations, such as repeating a power-down-exit-to-refreshto-power-down-entry sequence, the number of clock cycles between power-down exit
and power-down entry may not be sufficient to keep the DLL properly updated. In addition to meeting tPD when the REFRESH command is used between power-down exit
and power-down entry, two other conditions must be met. First, tXP must be satisfied
before issuing the REFRESH command. Second, tXPDLL must be satisfied before the
next power-down may be entered. An example is shown in Figure 106 (page 189).
Table 80: Power-Down Modes
MR0[12]
DLL State
PowerDown Exit
Active (any bank open)
Dont Care
On
Fast
tXP
to any other valid command
Precharged
(all banks precharged)
On
Fast
tXP
to any other valid command
Slow
tXPDLL
DRAM State
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Off
183
Relevant Parameters
to commands that require the DLL to be

locked (READ, RDAP, or ODT on);
tXP to any other valid command

Power-Down Mode
Figure 96: Active Power-Down Entry and Exit
T0
T1
T2
Ta1
Ta2
Ta3
Ta4
NOP
NOP
NOP
Valid
Ta0
CK#
CK
Command
tCK
Valid
tCH
tCL
NOP
NOP
tPD
tIS
CKE
Address
tIH
tIH
tCKE
tIS
(MIN)
Valid
Valid
tXP
tCPDED
Enter power-down
mode
Exit power-down
mode
Indicates break
in time scale
Dont Care
Figure 97: Precharge Power-Down (Fast-Exit Mode) Entry and Exit

T0
T1
T2
T4
T5
NOP
NOP
T3
Ta0
Ta1
NOP
Valid
CK#
CK
CK
CH
Command
CL
NOP
NOP
CPDED
t
IS
CKE (MIN)
IH
CKE
IS
PD
Enter power-down
mode
XP
Exit power-down
mode
Indicates break
in time scale
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184
Dont Care

Power-Down Mode
Figure 98: Precharge Power-Down (Slow-Exit Mode) Entry and Exit
T0
T1
T2
T4
Ta
NOP
NOP
T3
Ta1
Tb
CK#
CK
tCK
Command
tCH
PRE
tCL
NOP
NOP
tCKE
tCPDED
Valid 1
Valid 2
(MIN)
tXP
tIH
tIS
CKE
tXPDLL
tIS
tPD
Enter power-down
mode
Exit power-down
mode
Indicates break
in time scale
Notes:
Dont Care
1. Any valid command not requiring a locked DLL.

2. Any valid command requiring a locked DLL.
Figure 99: Power-Down Entry After READ or READ with Auto Precharge (RDAP)
CK#
T0
T1
Ta0
Ta1
Ta2
Ta3
Ta4
Ta5
Ta6
READ/
RDAP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Ta7
Ta8
Ta9
Ta10
Ta11
Ta12
CK
Command
NOP
tIS
NOP
tCPDED
CKE
Address
Valid
tPD
RL = AL + CL
DQS, DQS#
DQ BL8
DQ BC4
DI
n
DI
DI
n+1 n+2
DI
n
DI
n+1
DI
n+3
DI
n+4
DI
n+ 5
DI
n+6
DI
n+7
DI
DI
n+2 n+3
tRDPDEN
Power-down or
self refresh entry
Indicates break
in time scale
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Transitioning Data
Dont Care

Power-Down Mode
Figure 100: Power-Down Entry After WRITE
CK#
T0
T1
Ta0
Ta1
Ta2
Ta3
Ta4
Ta5
Ta6
Ta7
Tb0
WRITE
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Tb1
Tb2
Tb3
Tb4
CK
Command
NOP
tIS
NOP
tCPDED
CKE
Address
Valid
tPD
tWR
WL = AL + CWL
DQS, DQS#
DQ BL8
DI
n
DI
DI
n+1 n+2
DI
n+3
DQ BC4
DI
n
DI
n+1
DI
n+3
DI
n+2
DI
n+4
DI
DI
n+5 n+6
DI
n+7
tWRPDEN
Power-down or
self refresh entry1
Indicates break
in time scale
Note:
Transitioning Data
Dont Care
1. CKE can go LOW 2tCK earlier if BC4MRS.
Figure 101: Power-Down Entry After WRITE with Auto Precharge (WRAP)
CK#
T0
T1
Ta0
Ta1
Ta2
Ta3
Ta4
Ta5
Ta6
Ta7
Tb0
Tb1
Tb2
WRAP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Tb3
Tb4
CK
Command
tIS
tCPDED
CKE
Address
Valid
A10
WR1
WL = AL + CWL
tPD
DQS, DQS#
DQ BL8
DI
n
DI
n+1
DI
DI
DI
n+2 n+3 n+4
DQ BC4
DI
n
DI
n+1
DI
DI
n+2 n+3
DI
n+5
DI
n+6
DI
n+7
tWRAPDEN
Start internal
precharge
Power-down or
self refresh entry2
Indicates break
in time scale
Notes:
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Transitioning Data
Dont Care
1. tWR is programmed through MR0[11:9] and represents tWRmin (ns)/tCK rounded up to

the next integer tCK.
2. CKE can go LOW 2tCK earlier if BC4MRS.
186

Power-Down Mode
Figure 102: REFRESH to Power-Down Entry
T0
T1
T2
T3
NOP
NOP
Ta1
Ta0
Ta2
Tb0
CK#
CK
tCH
tCK
Command
tCL
REFRESH
NOP
tCPDED
NOP
tCKE
Valid
(MIN)
tPD
tIS
CKE
tXP
tREFPDEN
tRFC
(MIN)
(MIN)1
Indicates break
in time scale
Note:
Dont Care
1. After CKE goes HIGH during tRFC, CKE must remain HIGH until tRFC is satisfied.
Figure 103: ACTIVATE to Power-Down Entry

T0
T1
T2
T3
NOP
NOP
T5
T4
T6
T7
CK#
CK
Command
Address
tCK
tCH
tCL
ACTIVE
Valid
tCPDED
tIS
tPD
CKE
tACTPDEN
Dont Care
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187

Power-Down Mode
Figure 104: PRECHARGE to Power-Down Entry
T0
T1
T2
T3
NOP
NOP
T4
T5
T6
T7
CK#
CK
tCH
tCK
Command
tCL
PRE
All/single
bank
Address
tCPDED
tPD
tIS
CKE
tPREPDEN
Dont Care
Figure 105: MRS Command to Power-Down Entry

CK#
T0
CK
T1
tCK
Command
MRS
Address
Valid
T2
tCH
NOP
Ta0
Ta1
Ta2
Ta3
Ta4
tCPDED
tCL
NOP
NOP
NOP
tMRSPDEN
NOP
tPD
tIS
CKE
Indicates break
in time scale
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Dont Care

Power-Down Mode
Figure 106: Power-Down Exit to Refresh to Power-Down Entry
T0
T1
T2
T3
T4
Ta0
NOP
REFRESH
Ta1
Tb0
CK#
CK
Command
tCK
tCH
NOP
tCL
NOP
NOP
tCPDED
NOP
tXP1
tIH
tIS
CKE
tIS
tPD
tXPDLL2
Enter power-down
mode
Enter power-down
mode
Exit power-down
mode
Indicates break
in time scale
Notes:
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NOP
Dont Care
1. tXP must be satisfied before issuing the command.

2. tXPDLL must be satisfied (referenced to the registration of power-down exit) before the
next power-down can be entered.
189

RESET Operation
RESET Operation
The RESET signal (RESET#) is an asynchronous reset signal that triggers any time it
drops LOW, and there are no restrictions about when it can go LOW. After RESET# goes
LOW, it must remain LOW for 100ns. During this time, the outputs are disabled, ODT
(RTT) turns off (High-Z), and the DRAM resets itself. CKE should be driven LOW prior to
RESET# being driven HIGH. After RESET# goes HIGH, the DRAM must be re-initialized
as though a normal power-up was executed. All refresh counters on the DRAM are reset,
and data stored in the DRAM is assumed unknown after RESET# has gone LOW.
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RESET Operation
Figure 107: RESET Sequence
System RESET
(warm boot)
Stable and
valid clock
T0
T1
tCK
Tc0
Tb0
Ta0
Td0
CK#
CK
tCL
tCL
t CKSRX1
T = 100ns (MIN)
RESET#
tIOZ
= 20ns
T = 10ns (MIN)
tIS
Valid
CKE
tIS
tIS
Static LOW in case RTT_Nom is enabled at time Ta0, otherwise static HIGH or LOW
ODT
Valid
tIS
MRS
MRS
MRS
MRS
Address
Code
Code
Code
Code
A10
Code
Code
Code
Code
BA0 = L
BA1 = H
BA2 = L
BA0 = H
BA1 = H
BA2 = L
BA0 = H
BA1 = L
BA2 = L
BA0 = L
BA1 = L
BA2 = L
Command
NOP
Valid
ZQCL
DM
BA[2:0]
DQS
DQ
RTT
Valid
A10 = H
Valid
Valid
High-Z
High-Z
High-Z
T = 500s (MIN)
MR2
All voltage
supplies valid
and stable
tMRD
tMRD
tXPR
MR3
DRAM ready
for external
commands
tMRD
MR1 with
DLL ENABLE
tMOD
MR0 with
DLL RESET
ZQCAL
tZQinit
tDLLK
Normal
operation
Indicates break
in time scale
Note:
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Dont Care
1. The minimum time required is the longer of 10ns or 5 clocks.
191

On-Die Termination (ODT)

On-die termination (ODT) is a feature that enables the DRAM to enable/disable and
turn on/off termination resistance for each DQ, DQS, DQS#, and DM for the x4 and x8
configurations (and TDQS, TDQS# for the x8 configuration, when enabled). ODT is applied to each DQ, UDQS, UDQS#, LDQS, LDQS#, UDM, and LDM signal for the x16 configuration.
ODT is designed to improve signal integrity of the memory channel by enabling the
DRAM controller to independently turn on/off the DRAMs internal termination resistance for any grouping of DRAM devices. ODT is not supported during DLL disable
mode (simple functional representation shown below). The switch is enabled by the internal ODT control logic, which uses the external ODT ball and other control information.
Figure 108: On-Die Termination
ODT
To other
circuitry
such as
RCV,
...
RTT
VDDQ/2
Switch
DQ, DQS, DQS#,
DM, TDQS, TDQS#
Functional Representation of ODT

The value of RTT (ODT termination resistance value) is determined by the settings of
several mode register bits (see Table 86 (page 197)). The ODT ball is ignored while in
self refresh mode (must be turned off prior to self refresh entry) or if mode registers
MR1 and MR2 are programmed to disable ODT. ODT is comprised of nominal ODT and
dynamic ODT modes and either of these can function in synchronous or asynchronous
mode (when the DLL is off during precharge power-down or when the DLL is synchronizing). Nominal ODT is the base termination and is used in any allowable ODT state.
Dynamic ODT is applied only during writes and provides OTF switching from no RTT or
RTT,nom to RTT(WR).
The actual effective termination, RTT(EFF), may be different from RTT targeted due to
nonlinearity of the termination. For RTT(EFF) values and calculations, see Table 31 (page
56).
Nominal ODT
ODT (NOM) is the base termination resistance for each applicable ball; it is enabled or
disabled via MR1[9, 6, 2] (see Mode Register 1 (MR1) Definition), and it is turned on or
off via the ODT ball.
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Table 81: Truth Table ODT (Nominal)
MR1[9, 6, 2]
ODT Pin
DRAM Termination State
DRAM State
Notes
000
RTT,nom disabled, ODT off
Any valid
000
RTT,nom disabled, ODT on
Any valid except self refresh, read
000101
RTT,nom enabled, ODT off
Any valid
000101
RTT,nom enabled, ODT on
Any valid except self refresh, read
110 and 111
RTT,nom reserved, ODT on or off
Illegal
Notes:
1. Assumes dynamic ODT is disabled (see Dynamic ODT (page 195) when enabled).
2. ODT is enabled and active during most writes for proper termination, but it is not illegal
for it to be off during writes.
3. ODT must be disabled during reads. The RTT,nom value is restricted during writes. Dynamic ODT is applicable if enabled.
Nominal ODT resistance RTT,nom is defined by MR1[9, 6, 2], as shown in Mode Register 1
(MR1) Definition. The R TT,nom termination value applies to the output pins previously
mentioned. DDR3 SDRAM supports multiple RTT,nom values based on RZQ/n where n
can be 2, 4, 6, 8, or 12 and RZQ is 240. RTT,nom termination is allowed any time after the
DRAM is initialized, calibrated, and not performing read access, or when it is not in self
refresh mode.
Write accesses use RTT,nom if dynamic ODT (RTT(WR)) is disabled. If RTT,nom is used during writes, only RZQ/2, RZQ/4, and RZQ/6 are allowed (see Table 85 (page 196)). ODT
timings are summarized in Table 82 (page 193), as well as listed in the Electrical Characteristics and AC Operating Conditions table.
Examples of nominal ODT timing are shown in conjunction with the synchronous
mode of operation in Synchronous ODT Mode (page 201).
Table 82: ODT Parameters
Symbol
Description
Begins at
Definition for All

DDR3L Speed Bins
Unit
tAON
CWL + AL - 2
tCK
CWL + AL - 2
tCK
Defined to
ODTLon
ODT synchronous turn-on delay
ODT registered HIGH
RTT(ON)
ODTLoff
ODT synchronous turn-off delay
ODT registered HIGH
RTT(OFF) tAOF
tAONPD
ODT asynchronous turn-on delay
ODT registered HIGH
RTT(ON)
28.5
ns
tAOFPD
ODT asynchronous turn-off delay
ODT registered HIGH
RTT(OFF)
28.5
ns
ODT registered
LOW
4tCK
tCK
ODTH4
ODT minimum HIGH time after ODT ODT registered HIGH

assertion or write (BC4)
or write registration
with ODT HIGH
ODTH8
ODT minimum HIGH time after

write (BL8)
Write registration
with ODT HIGH
ODT registered
LOW
6tCK
tCK
tAON
ODT turn-on relative to ODTLon

completion
Completion of
ODTLon
RTT(ON)
See Electrical Characteristics and AC Operating Conditions table
ps
tAOF
ODT turn-off relative to ODTLoff

completion
Completion of
ODTLoff
RTT(OFF)
0.5tCK 0.2tCK
tCK
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Dynamic ODT
Dynamic ODT
In certain application cases, and to further enhance signal integrity on the data bus, it is
desirable that the termination strength of the DDR3 SDRAM can be changed without
issuing an MRS command, essentially changing the ODT termination on the fly. With
dynamic ODT RTT(WR)) enabled, the DRAM switches from nominal ODT RTT,nom) to dynamic ODT RTT(WR)) when beginning a WRITE burst and subsequently switches back to
nominal ODT RTT,nom) at the completion of the WRITE burst. This requirement is supported by the dynamic ODT feature, as described below.
Dynamic ODT Special Use Case

When DDR3 devices are architect as a single rank memory array, dynamic ODT offers a
special use case: the ODT ball can be wired high (via a current limiting resistor preferred) by having RTT,nom disabled via MR1 and RTT(WR) enabled via MR2. This will allow
the ODT signal not to have to be routed yet the DRAM can provide ODT coverage during write accesses.
When enabling this special use case, some standard ODT spec conditions may be violated: ODT is sometimes suppose to be held low. Such ODT spec violation (ODT not
LOW) is allowed under this special use case. Most notably, if Write Leveling is used, this
would appear to be a problem since RTT(WR) can not be used (should be disabled) and
RTT(NOM) should be used. For Write leveling during this special use case, with the DLL
locked, then RTT(NOM) maybe enabled when entering Write Leveling mode and disabled
when exiting Write Leveling mode. More so, R TT(NOM) must be enabled when enabling
Write Leveling, via same MR1 load, and disabled when disabling Write Leveling, via
same MR1 load if RTT(NOM) is to be used.
ODT will turn-on within a delay of ODTLon + tAON + tMOD + 1CK (enabling via MR1)
or turn-off within a delay of ODTLoff + tAOF + tMOD + 1CK. As seen in the table below,
between the Load Mode of MR1 and the previously specified delay, the value of ODT is
uncertain. this means the DQ ODT termination could turn-on and then turn-off again
during the period of stated uncertainty.
Table 83: Write Leveling with Dynamic ODT Special Case
Begin RTT,nom Uncertainty
MR1 load mode command:
End RTT,nom Uncertainty

ODTLon +
tAON
ODTLoff +
tAOFF
tMOD
tMOD
+ 1CK
I/Os
RTT,nom Final State
DQS, DQS#
Drive RTT,nom value
DQs
No RTT,nom
DQS, DQS#
No RTT,nom
DQs
No RTT,nom
Enable Write Leveling and RTT(NOM)

MR1 load mode command:
+ 1CK
Disable Write Leveling and RTT(NOM)
The dynamic ODT mode is enabled if either MR2[9] or MR2[10] is set to 1. Dynamic
ODT is not supported during DLL disable mode so RTT(WR) must be disabled. The dynamic ODT function is described below:
Two RTT values are availableRTT,nom and RTT(WR).
The value for RTT,nom is preselected via MR1[9, 6, 2].
The value for RTT(WR) is preselected via MR2[10, 9].
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195

Dynamic ODT
During DRAM operation without READ or WRITE commands, the termination is controlled.
Nominal termination strength RTT,nom is used.
Termination on/off timing is controlled via the ODT ball and latencies ODTLon and
ODTLoff.
When a WRITE command (WR, WRAP, WRS4, WRS8, WRAPS4, WRAPS8) is registered,
and if dynamic ODT is enabled, the ODT termination is controlled.
A latency of ODTLcnw after the WRITE command: termination strength R TT,nom
switches to RTT(WR)
A latency of ODTLcwn8 (for BL8, fixed or OTF) or ODTLcwn4 (for BC4, fixed or OTF)
after the WRITE command: termination strength R TT(WR) switches back to RTT,nom.
On/off termination timing is controlled via the ODT ball and determined by ODTLon, ODTLoff, ODTH4, and ODTH8.
During the tADC transition window, the value of RTT is undefined.
ODT is constrained during writes and when dynamic ODT is enabled (see the table below, Dynamic ODT Specific Parameters). ODT timings listed in the ODT Parameters table in On-Die Termination (ODT) also apply to dynamic ODT mode.
Table 84: Dynamic ODT Specific Parameters
Definition for All
DDR3L Speed
Bins
Unit
Symbol
Description
Begins at
Defined to
ODTLcnw
Change from RTT,nom to

RTT(WR)
Write registration
RTT switched from RTT,nom

to RTT(WR)
WL - 2
tCK
ODTLcwn4
Change from RTT(WR) to

RTT,nom (BC4)
Write registration
RTT switched from RTT(WR)

to RTT,nom
4tCK + ODTL off
tCK
ODTLcwn8
Change from RTT(WR) to

RTT,nom (BL8)
Write registration
RTT switched from RTT(WR)

to RTT,nom
6tCK + ODTL off
tCK
tADC
RTT change skew
ODTLcnw completed
RTT transition complete
0.5tCK 0.2tCK
tCK
Table 85: Mode Registers for RTT,nom

MR1 (RTT,nom)
M9
M6
M2
RTT,nom (RZQ)
RTT,nom (Ohm)
RTT,nom Mode Restriction
Off
Off
n/a
RZQ/4
60
Self refresh
RZQ/2
120
RZQ/6
40
RZQ/12
20
RZQ/8
30
Reserved
Reserved
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196
Self refresh, write

n/a

Dynamic ODT
Table 85: Mode Registers for RTT,nom (Continued)
MR1 (RTT,nom)
M9
M6
M2
RTT,nom (RZQ)
RTT,nom (Ohm)
RTT,nom Mode Restriction
Reserved
Reserved
n/a
Note:
1. RZQ = 240. If RTT,nom is used during WRITEs, only RZQ/2, RZQ/4, RZQ/6 are allowed.
Table 86: Mode Registers for RTT(WR)

MR2 (RTT(WR))
M10
M9
RTT(WR) (RZQ)
Dynamic ODT off: WRITE does not affect RTT,nom
RTT(WR) (Ohm)
RZQ/4
60
RZQ/2
120
Reserved
Reserved
Table 87: Timing Diagrams for Dynamic ODT

Figure and Page
Title
Dynamic ODT: ODT Asserted Before and After the WRITE, BC4
Dynamic ODT: Without WRITE Command
Dynamic ODT: ODT Pin Asserted Together with WRITE Command for 6 Clock Cycles, BL8
Dynamic ODT: ODT Pin Asserted with WRITE Command for 6 Clock Cycles, BC4
Dynamic ODT: ODT Pin Asserted with WRITE Command for 4 Clock Cycles, BC4
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Figure 109: Dynamic ODT: ODT Asserted Before and After the WRITE, BC4
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
NOP
NOP
NOP
NOP
WRS4
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CK#
CK
Command
Address
Valid
ODTH4
ODTLoff
ODTH4
ODT
ODTLon
ODTLcwn4
tAON
tADC
(MIN)
RTT
(MIN)
tADC
tAON
tAOF
(MIN)
RTT(WR)
RTT,nom
(MAX)
tADC
(MIN)
RTT,nom
tADC
(MAX)
tAOF
(MAX)
(MAX)
ODTLcnw
DQS, DQS#
DQ
DI
n
WL
DI
n+ 1
DI
n+ 2
DI
n+ 3
Transitioning
Notes:
Dont Care
1. Via MRS or OTF. AL = 0, CWL = 5. RTT,nom and RTT(WR) are enabled.

2. ODTH4 applies to first registering ODT HIGH and then to the registration of the WRITE command. In this example,
ODTH4 is satisfied if ODT goes LOW at T8 (four clocks after the WRITE command).
198
Figure 110: Dynamic ODT: Without WRITE Command
Command
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Address
ODTH4
ODTLon
ODTLoff
ODT
tAON
RTT
tAON
tAOF
(MAX)
(MIN)
RTT,nom
(MIN)
tAOF
(MAX)
DQS, DQS#
DQ
Transitioning
Notes:
Dont Care
1. AL = 0, CWL = 5. RTT,nom is enabled and RTT(WR) is either enabled or disabled.

2. ODTH4 is defined from ODT registered HIGH to ODT registered LOW; in this example, ODTH4 is satisfied. ODT registered LOW at T5 is also legal.

Dynamic ODT
CK#
CK
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Figure 111: Dynamic ODT: ODT Pin Asserted Together with WRITE Command for 6 Clock Cycles, BL8
CK#
T0
T1
T2
NOP
WRS8
NOP
T3
T4
T5
T6
T7
T8
T9
T10
T11
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CK
Command
ODTLcnw
Address
Valid
ODTH8
ODTLoff
ODTLon
ODT
tADC
tAOF
(MAX)
(MIN)
RTT(WR)
RTT
tAON
(MIN)
tAOF
ODTLcwn8
(MAX)
DQS, DQS#
WL
DI
b
DQ
199
DI
b+1
DI
b+2
DI
b+3
DI
b+ 4
DI
b+5
DI
b+6
DI
b+ 7
Transitioning
Notes:
Dont Care

Dynamic ODT
1. Via MRS or OTF; AL = 0, CWL = 5. If RTT,nom can be either enabled or disabled, ODT can be HIGH. RTT(WR) is enabled.
2. In this example, ODTH8 = 6 is satisfied exactly.

Dynamic ODT
Figure 112: Dynamic ODT: ODT Pin Asserted with WRITE Command for 6 Clock Cycles, BC4
CK#
CK
Command
T0
T1
T2
NOP
WRS4
NOP
T3
T4
T5
T6
T7
T8
T9
T10
T11
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
ODTLcnw
Address
Valid
ODTH4
ODTLoff
ODT
ODTLon
tADC
(MAX)
tADC
RTT(WR)
RTT
tAON
tADC
(MIN)
tAOF
(MIN)
RTT,nom
tAOF
(MAX)
(MIN)
(MAX)
ODTLcwn4
DQS, DQS#
DI
n
DQ
DI
n+1
DI
n+2
DI
n+3
WL
Transitioning
Notes:
Dont Care
1. Via MRS or OTF. AL = 0, CWL = 5. RTT,nom and RTT(WR) are enabled.

2. ODTH4 is defined from ODT registered HIGH to ODT registered LOW, so in this example,
ODTH4 is satisfied. ODT registered LOW at T5 is also legal.
Figure 113: Dynamic ODT: ODT Pin Asserted with WRITE Command for 4 Clock Cycles, BC4
CK#
CK
Command
T0
T1
T2
NOP
WRS4
NOP
T3
T4
T5
T6
T7
T8
T9
T10
T11
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
ODTLcnw
Address
Valid
ODTLoff
ODTH4
ODT
tADC
ODTLon
tAOF
(MAX)
(MIN)
RTT(WR)
RTT
tAON
tAOF
(MIN)
(MAX)
ODTLcwn4
DQS, DQS#
WL
DI
n
DQ
DI
n+1
DI
n+2
DI
n+3
Transitioning
Notes:
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Dont Care
1. Via MRS or OTF. AL = 0, CWL = 5. RTT,nom can be either enabled or disabled. If disabled,
ODT can remain HIGH. RTT(WR) is enabled.
2. In this example ODTH4 = 4 is satisfied exactly.
200

Synchronous ODT Mode

Synchronous ODT mode is selected whenever the DLL is turned on and locked and
when either RTT,nom or RTT(WR) is enabled. Based on the power-down definition, these
modes are:
Any bank active with CKE HIGH

Refresh mode with CKE HIGH
Idle mode with CKE HIGH
Active power-down mode (regardless of MR0[12])
Precharge power-down mode if DLL is enabled by MR0[12] during precharge powerdown
ODT Latency and Posted ODT

In synchronous ODT mode, RTT turns on ODTLon clock cycles after ODT is sampled
HIGH by a rising clock edge and turns off ODTLoff clock cycles after ODT is registered
LOW by a rising clock edge. The actual on/off times varies by tAON and tAOF around
each clock edge (see Table 88 (page 202)). The ODT latency is tied to the WRITE latency
(WL) by ODTLon = WL - 2 and ODTLoff = WL - 2.
Since write latency is made up of CAS WRITE latency (CWL) and additive latency (AL),
the AL programmed into the mode register (MR1[4, 3]) also applies to the ODT signal.
The devices internal ODT signal is delayed a number of clock cycles defined by the AL
relative to the external ODT signal. Thus, ODTLon = CWL + AL - 2 and ODTLoff = CWL +
AL - 2.
Timing Parameters
Synchronous ODT mode uses the following timing parameters: ODTLon, ODTLoff,
ODTH4, ODTH8, tAON, and tAOF. The minimum R TT turn-on time (tAON [MIN]) is the
point at which the device leaves High-Z and ODT resistance begins to turn on. Maximum RTT turn-on time (tAON [MAX]) is the point at which ODT resistance is fully on.
Both are measured relative to ODTLon. The minimum R TT turn-off time (tAOF [MIN]) is
the point at which the device starts to turn off ODT resistance. The maximum R TT turn
off time (tAOF [MAX]) is the point at which ODT has reached High-Z. Both are measured
from ODTLoff.
When ODT is asserted, it must remain HIGH until ODTH4 is satisfied. If a WRITE command is registered by the DRAM with ODT HIGH, then ODT must remain HIGH until
ODTH4 (BC4) or ODTH8 (BL8) after the WRITE command (see Figure 115 (page 203)).
ODTH4 and ODTH8 are measured from ODT registered HIGH to ODT registered LOW
or from the registration of a WRITE command until ODT is registered LOW.
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Table 88: Synchronous ODT Parameters

Symbol
Description
Begins at
Definition for All

DDR3L Speed Bins
Unit
tAON
CWL + AL - 2
tCK
Defined to
ODTLon
ODT synchronous turn-on delay
ODT registered HIGH
RTT(ON)
ODTLoff
ODT synchronous turn-off delay
ODT registered HIGH
RTT(OFF) tAOF
CWL +AL - 2
tCK
ODTH4
ODT minimum HIGH time after ODT

assertion or WRITE (BC4)
ODT registered HIGH or write registration with ODT HIGH
ODT registered LOW
4tCK
tCK
ODTH8
ODT minimum HIGH time after WRITE Write registration with ODT HIGH
(BL8)
ODT registered LOW
6tCK
tCK
tAON
ODT turn-on relative to ODTLon

completion
Completion of ODTLon
RTT(ON)
See Electrical Characteristics and AC Operating Conditions table
ps
tAOF
ODT turn-off relative to ODTLoff

completion
Completion of ODTLoff
RTT(OFF)
0.5tCK 0.2tCK
tCK
202
Figure 114: Synchronous ODT

CK#
CK
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
AL = 3
AL = 3
CWL - 2
ODT
ODTH4 (MIN)
ODTLoff = CWL + AL - 2
ODTLon = CWL + AL - 2
tAON
(MIN)
AOF (MIN)
RTT,nom
RTT
tAON
tAOF
(MAX)
Transitioning
Note:
1. AL = 3; CWL = 5; ODTLon = WL = 6.0; ODTLoff = WL - 2 = 6. RTT,nom is enabled.
(MAX)
Dont Care

CKE
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Figure 115: Synchronous ODT (BC4)

CK#
CK
T0
T1
T2
NOP
NOP
NOP
T3
T4
T5
T6
T7
NOP
NOP
NOP
NOP
WRS4
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CKE
Command
ODTH4
ODTH4 (MIN)
ODTH4
ODT
ODTLoff = WL - 2
ODTLoff = WL - 2
ODTLon = WL - 2
ODTLon = WL - 2
tAON
tAOF
(MIN)
tAON
(MIN)
tAON
(MAX)
tAOF
(MAX)
tAOF
tAON
tAOF
(MIN)
(MAX)
(MAX)
Transitioning
Notes:
(MIN)
RTT,nom
RTT,nom
RTT
Dont Care
203
1.
2.
3.
4.
WL = 7. RTT,nom is enabled. RTT(WR) is disabled.

ODT must be held HIGH for at least ODTH4 after assertion (T1).
ODT must be kept HIGH ODTH4 (BC4) or ODTH8 (BL8) after the WRITE command (T7).
ODTH is measured from ODT first registered HIGH to ODT first registered LOW or from the registration of the
WRITE command with ODT HIGH to ODT registered LOW.
5. Although ODTH4 is satisfied from ODT registered HIGH at T6, ODT must not go LOW before T11 as ODTH4 must
also be satisfied from the registration of the WRITE command at T7.


ODT Off During READs
Because the device cannot terminate and drive at the same time, RTT must be disabled
at least one-half clock cycle before the READ preamble by driving the ODT ball LOW (if
either RTT,nom or RTT(WR) is enabled). RTT may not be enabled until the end of the postamble, as shown in the following example.
Note: ODT may be disabled earlier and enabled later than shown in Figure 116
(page 205).
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Figure 116: ODT During READs

T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
Command
READ
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Address
Valid
CK#
CK
ODTLon = CWL + AL - 2
ODTLoff = CWL + AL - 2
ODT
tAOF
(MIN)
RTT,nom
RTT,nom
RTT
RL = AL + CL
tAOF
tAON
(MAX)
(MAX)
DQS, DQS#
DQ
DI
b
DI
b+1
DI
b+2
DI
b+3
DI
b+4
DI
b+5
DI
b+6
DI
b+7
Transitioning
Note:
Dont Care
1. ODT must be disabled externally during READs by driving ODT LOW. For example, CL = 6; AL = CL - 1 = 5; RL = AL
+ CL = 11; CWL = 5; ODTLon = CWL + AL - 2 = 8; ODTLoff = CWL + AL - 2 = 8. RTT,nom is enabled. RTT(WR) is a Dont
Care.
205


Asynchronous ODT Mode

Asynchronous ODT mode is available when the DRAM runs in DLL on mode and when
either RTT,nom or RTT(WR) is enabled; however, the DLL is temporarily turned off in precharged power-down standby (via MR0[12]). Additionally, ODT operates asynchronously when the DLL is synchronizing after being reset. See Power-Down Mode (page 182)
for definition and guidance over power-down details.
In asynchronous ODT timing mode, the internal ODT command is not delayed by AL
relative to the external ODT command. In asynchronous ODT mode, ODT controls RTT
by analog time. The timing parameters tAONPD and tAOFPD replace ODTLon/tAON
and ODTLoff/tAOF, respectively, when ODT operates asynchronously.
The minimum RTT turn-on time (tAONPD [MIN]) is the point at which the device termination circuit leaves High-Z and ODT resistance begins to turn on. Maximum RTT turnon time (tAONPD [MAX]) is the point at which ODT resistance is fully on. tAONPD
(MIN) and tAONPD (MAX) are measured from ODT being sampled HIGH.
The minimum RTT turn-off time (tAOFPD [MIN]) is the point at which the device termination circuit starts to turn off ODT resistance. Maximum RTT turn-off time (tAOFPD
[MAX]) is the point at which ODT has reached High-Z. tAOFPD (MIN) and tAOFPD
(MAX) are measured from ODT being sampled LOW.
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Figure 117: Asynchronous ODT Timing with Fast ODT Transition

CK#
CK
T0
T1
T2
T3
T4
T5
T6
T7
T8
T10
T9
T11
T12
T13
T14
T15
T16
T17
CKE
tIH
tIS
tIH
tIS
ODT
tAONPD
tAOFPD
(MIN)
(MIN)
RTT,nom
RTT
tAONPD
(MAX)
tAOFPD
(MAX)
Transitioning
Note:
Dont Care
1. AL is ignored.
Table 89: Asynchronous ODT Timing Parameters for All Speed Bins
207
Symbol
Description
tAONPD
Min
Max
Unit
tAOFPD
Asynchronous RTT turn-on delay (power-down with DLL off)
8.5
ns
Asynchronous RTT turn-off delay (power-down with DLL off)
8.5
ns


Synchronous to Asynchronous ODT Mode Transition (Power-Down Entry)
There is a transition period around power-down entry (PDE) where the DRAMs ODT
may exhibit either synchronous or asynchronous behavior. This transition period occurs if the DLL is selected to be off when in precharge power-down mode by the setting
MR0[12] = 0. Power-down entry begins tANPD prior to CKE first being registered LOW,
and ends when CKE is first registered LOW. tANPD is equal to the greater of ODTLoff +
1tCK or ODTLon + 1tCK. If a REFRESH command has been issued, and it is in progress
when CKE goes LOW, power-down entry ends tRFC after the REFRESH command, rather than when CKE is first registered LOW. Power-down entry then becomes the greater
of tANPD and tRFC - REFRESH command to CKE registered LOW.
ODT assertion during power-down entry results in an RTT change as early as the lesser
of tAONPD (MIN) and ODTLon tCK + tAON (MIN), or as late as the greater of tAONPD
(MAX) and ODTLon tCK + tAON (MAX). ODT de-assertion during power-down entry
can result in an RTT change as early as the lesser of tAOFPD (MIN) and ODTLoff tCK +
tAOF (MIN), or as late as the greater of tAOFPD (MAX) and ODTLoff tCK + tAOF (MAX).
Table 90 (page 209) summarizes these parameters.
If AL has a large value, the uncertainty of the state of RTT becomes quite large. This is
because ODTLon and ODTLoff are derived from the WL; and WL is equal to CWL + AL.
Figure 118 (page 209) shows three different cases:
ODT_A: Synchronous behavior before tANPD.
ODT_B: ODT state changes during the transition period with tAONPD (MIN) <
ODTLon tCK + tAON (MIN) and tAONPD (MAX) > ODTLon tCK + tAON (MAX).
ODT_C: ODT state changes after the transition period with asynchronous behavior.
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Table 90: ODT Parameters for Power-Down (DLL Off) Entry and Exit Transition Period
Description
Min
Power-down entry transition period

(power-down entry)
Max
Greater of:
tANPD
or
tRFC
tANPD
Power-down exit transition period

(power-down exit)
- refresh to CKE LOW
+ tXPDLL
ODT to RTT turn-on delay

(ODTLon = WL - 2)
Lesser of: tAONPD (MIN) (2ns) or

ODTLon tCK + tAON (MIN)
Greater of: tAONPD (MAX) (8.5ns) or

ODTLon tCK + tAON (MAX)
ODT to RTT turn-off delay

(ODTLoff = WL - 2)
Lesser of: tAOFPD (MIN) (2ns) or

ODTLoff tCK + tAOF (MIN)
Greater of: tAOFPD (MAX) (8.5ns) or

ODTLoff tCK + tAOF (MAX)
tANPD
WL - 1 (greater of ODTLoff + 1 or ODTLon + 1)
Figure 118: Synchronous to Asynchronous Transition During Precharge Power-Down (DLL Off) Entry
T0
T1
T2
T3
T4
T5
T6
T7
NOP
REF
NOP
NOP
NOP
NOP
NOP
NOP
T8
T9
T10
T11
T12
T13
Ta0
Ta1
Ta2
Ta3
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CK#
CK
209
CKE
Command
tRFC
(MIN)
tANPD
ODT A
synchronous
DRAM RTT A
synchronous
tAOF
RTT,nom
ODTLoff
(MIN)
tAOF
(MAX)
ODT B
asynchronous
or synchronous
ODTLoff + tAOFPD (MIN)

tAOFPD
tAOFPD
DRAM RTT B
asynchronous
or synchronous
(MAX)
(MIN)
RTT,nom
ODTLoff + tAOFPD (MAX)
ODT C
asynchronous
tAOFPD
DRAM RTT C
asynchronous
(MIN)
RTT,nom
tAOFPD
Indicates break
in time scale
Note:
1. AL = 0; CWL = 5; ODTL(off) = WL - 2 = 3.
Transitioning
(MAX)
Dont Care

PDE transition period

Asynchronous to Synchronous ODT Mode Transition (PowerDown Exit)
Asynchronous to Synchronous ODT Mode Transition (Power-Down Exit)

The DRAMs ODT can exhibit either asynchronous or synchronous behavior during
power-down exit (PDX). This transition period occurs if the DLL is selected to be off
when in precharge power-down mode by setting MR0[12] to 0. Power-down exit begins
tANPD prior to CKE first being registered HIGH, and ends tXPDLL after CKE is first registered HIGH. tANPD is equal to the greater of ODTLoff + 1tCK or ODTLon + 1tCK. The
transition period is tANPD + tXPDLL.
ODT assertion during power-down exit results in an RTT change as early as the lesser of
tAONPD (MIN) and ODTLon tCK + tAON (MIN), or as late as the greater of tAONPD
(MAX) and ODTLon tCK + tAON (MAX). ODT de-assertion during power-down exit
may result in an RTT change as early as the lesser of tAOFPD (MIN) and ODTLoff tCK +
tAOF (MIN), or as late as the greater of tAOFPD (MAX) and ODTLoff tCK + tAOF (MAX).
Table 90 (page 209) summarizes these parameters.
If AL has a large value, the uncertainty of the RTT state becomes quite large. This is because ODTLon and ODTLoff are derived from WL, and WL is equal to CWL + AL. Figure
119 (page 211) shows three different cases:
ODT C: Asynchronous behavior before tANPD.
ODT B: ODT state changes during the transition period, with tAOFPD (MIN) < ODTLoff tCK + tAOF (MIN), and ODTLoff tCK + tAOF (MAX) > tAOFPD (MAX).
ODT A: ODT state changes after the transition period with synchronous response.
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Figure 119: Asynchronous to Synchronous Transition During Precharge Power-Down (DLL Off) Exit
T0
T1
T2
Ta0
Ta1
Ta2
Ta3
Ta4
Ta5
NOP
NOP
NOP
NOP
NOP
Ta6
Tb0
Tb1
Tb2
Tc0
Tc1
Tc2
Td0
Td1
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CK#
CK
CKE
COMMAND
tXPDLL
tANPD
PDX transition period

ODT A
asynchronous
tAOFPD
(MIN)
RTT,nom
tAOFPD
ODTLoff + tAOF (MIN)
(MAX)
tAOFPD
ODT B
asynchronous
or synchronous
RTT B
asynchronous
or synchronous
tAOFPD
(MAX)
(MIN)
RTT,nom
ODTLoff + tAOF (MAX)
ODTLoff
ODT C
synchronous
DRAM RTT C
synchronous
tAOF
(MAX)
tAOF
(MIN)
RTT,nom
211
Indicates break
in time scale
Note:
1. CL = 6; AL = CL - 1; CWL = 5; ODTLoff = WL - 2 = 8.
Transitioning
Dont Care

DRAM RTT A
asynchronous

Asynchronous to Synchronous ODT Mode Transition (Short CKE Pulse)
If the time in the precharge power-down or idle states is very short (short CKE LOW
pulse), the power-down entry and power-down exit transition periods overlap. When
overlap occurs, the response of the DRAMs RTT to a change in the ODT state can be
synchronous or asynchronous from the start of the power-down entry transition period
to the end of the power-down exit transition period, even if the entry period ends later
than the exit period.
If the time in the idle state is very short (short CKE HIGH pulse), the power-down exit
and power-down entry transition periods overlap. When this overlap occurs, the response of the DRAMs RTT to a change in the ODT state may be synchronous or asynchronous from the start of power-down exit transition period to the end of the powerdown entry transition period.
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Figure 120: Transition Period for Short CKE LOW Cycles with Entry and Exit Period Overlapping
CK#
CK
Command
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
Ta0
Ta1
Ta2
Ta3
Ta4
REF
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CKE
PDE transition period
tANPD
(MIN)
PDX transition period
tANPD
Short CKE low transition period (R
TT
tXPDLL
change asynchronous or synchronous)
Indicates break
in time scale
213
Note:
Transitioning
Dont Care
1. AL = 0, WL = 5, tANPD = 4.
Figure 121: Transition Period for Short CKE HIGH Cycles with Entry and Exit Period Overlapping
CK#
CK
Command
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
Ta0
Ta1
Ta2
Ta3
Ta4
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CKE
tANPD
tXPDLL
tANPD
Short CKE HIGH transition period (RTT change asynchronous or synchonous)
Indicates break
in time scale
Note:
1. AL = 0, WL = 5, tANPD = 4.
Transitioning
Dont Care

tRFC

8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-4000

www.micron.com/products/support Sales inquiries: 800-932-4992
Micron and the Micron logo are trademarks of Micron Technology, Inc.
All other trademarks are the property of their respective owners.
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.
Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur.
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4Gb: x4, x8, x16 DDR3L SDRAM

DDR3L SDRAM (1.35V) is a low-voltage version of the

Self refresh temperature (SRT)

VDD = V DDQ = 1.35V (1.2831.45V)

Table 1: Key Timing Parameters

Data Rate (MT/s)

1. Backward compatible to 1066, CL = 7 (-187E).

4Gb: x4, x8, x16 DDR3L SDRAM

128 Meg x 4 x 8 banks

Figure 1: DDR3L Part Numbers

78-ball 7.5mm x 10.6mm FBGA

96-ball 9mm x 14mm FBGA

96-ball 7.5mm x 13.5mm FBGA

FBGA Part Marking Decoder

4Gb: x4, x8, x16 DDR3L SDRAM

4Gb: x4, x8, x16 DDR3L SDRAM

4Gb: x4, x8, x16 DDR3L SDRAM

4Gb: x4, x8, x16 DDR3L SDRAM

4Gb: x4, x8, x16 DDR3L SDRAM

4Gb: x4, x8, x16 DDR3L SDRAM

ACTIVATE to Power-Down Entry ................................................................................................. 187

4Gb: x4, x8, x16 DDR3L SDRAM

4Gb: x4, x8, x16 DDR3L SDRAM

DDR3-1066 Speed Bins ................................................................................................................... 73

4Gb: x4, x8, x16 DDR3L SDRAM

PREA = PRECHARGE ALL

SRX = Self refresh exit

4Gb: x4, x8, x16 DDR3L SDRAM

4Gb: x4, x8, x16 DDR3L SDRAM

Connect UDQS to ground via 1k* resistor.

4Gb: x4, x8, x16 DDR3L SDRAM

Functional Block Diagrams

BC4 (burst chop)

4Gb: x4, x8, x16 DDR3L SDRAM

BC4 (burst chop)

Figure 5: 256 Meg x 16 Functional Block Diagram

BC4 (burst chop)

LDQS, LDQS#, UDQS, UDQS#

4Gb: x4, x8, x16 DDR3L SDRAM

Ball Assignments and Descriptions

NF, DQ6 DQS#

NF, DQ7 NF, DQ5

VDDQ NF, DQ4

4Gb: x4, x8, x16 DDR3L SDRAM

4Gb: x4, x8, x16 DDR3L SDRAM

RAS#, CAS#, WE#

4Gb: x4, x8, x16 DDR3L SDRAM

Termination data strobe: Applies to the x8 configuration only. When TDQS is

Power supply: 1.5V 0.075V.

Reference voltage for control, command, and address: VREFCA must be

DQ ground: Isolated on the device for improved noise immunity.

4Gb: x4, x8, x16 DDR3L SDRAM

RAS#, CAS#, WE#

4Gb: x4, x8, x16 DDR3L SDRAM

Power supply: 1.5V 0.075V.

Reference voltage for control, command, and address: VREFCA must be

DQ ground: Isolated on the device for improved noise immunity.

4Gb: x4, x8, x16 DDR3L SDRAM

1. All dimensions are in millimeters.