2Gb DDR3 SDRAM PDF

2Gb: x4, x8, x16 DDR3 SDRAM
Features
DDR3 SDRAM
MT41J512M4 – 64 Meg x 4 x 8 Banks
Features Options1 Marking

• Configuration
• VDD = V DDQ = 1.5V ±0.075V – 512 Meg x 4 512M4
• 1.5V center-terminated push/pull I/O – 256 Meg x 8 256M8
• Differential bidirectional data strobe – 128 Meg x 16 128M16
• 8n-bit prefetch architecture • FBGA package (Pb-free) – x4, x8
• Differential clock inputs (CK, CK#) – 78-ball (8mm x 10.5mm) Rev. K DA
• 8 internal banks – 78-ball (8mm x 10.5mm) Rev. N EF
• Nominal and dynamic on-die termination (ODT) • FBGA package (Pb-free) – x16
for data, strobe, and mask signals – 96-ball (8mm x 14mm) Rev. K JT
• Programmable CAS READ latency (CL) – 96-ball (8mm x 14mm) Rev. N TW
• Posted CAS additive latency (AL) • Timing – cycle time
• Programmable CAS WRITE latency (CWL) based on – 938ps @ CL = 14 (DDR3-2133) -093
tCK
– 1.07ns @ CL = 13 (DDR3-1866) -107
• Fixed burst length (BL) of 8 and burst chop (BC) of 4 – 1.25ns @ CL = 11 (DDR3-1600) -125
(via the mode register set [MRS]) – 1.5ns @ CL = 9 (DDR3-1333) -15E
• Selectable BC4 or BL8 on-the-fly (OTF) – 1.87ns @ CL = 7 (DDR3-1066) -187E
• Self refresh mode • Operating temperature
• TC of 0°C to 95°C – Commercial (0°C ≤ T C ≤ +95°C) None
– 64ms, 8192 cycle refresh at 0°C to 85°C – Industrial (–40°C ≤ T C ≤ +95°C) IT
– 32ms, 8192 cycle refresh at 85°C to 95°C • Revision :K / :N
• Self refresh temperature (SRT)
• Automatic self refresh (ASR) Note: 1. Not all options listed can be combined to
• Write leveling define an offered product. Use the part
• Multipurpose register catalog search on http://www.micron.com
• Output driver calibration for available offerings.
Table 1: Key Timing Parameters
Speed Grade Data Rate (MT/s) Target tRCD-tRP-CL tRCD (ns) tRP (ns) CL (ns)
-0931, 2, 3, 4 2133 14-14-14 13.13 13.13 13.13
-1071, 2, 3 1866 13-13-13 13.91 13.91 13.91
-1251, 2, 1600 11-11-11 13.75 13.75 13.75
-15E1, 1333 9-9-9 13.5 13.5 13.5
-187E 1066 7-7-7 13.1 13.1 13.1
Notes: 1. Backward compatible to 1066, CL = 7 (-187E).

2. Backward compatible to 1333, CL = 9 (-15E).
3. Backward compatible to 1600, CL = 11 (-125).
4. Backward compatible to 1866, CL = 13 (-107).
PDF: 09005aef826aaadc Micron Technology, Inc. reserves the right to change products or specifications without notice.
2Gb_DDR3_SDRAM.pdf - Rev. S 02/16 EN 1 © 2006 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
Features
Table 2: Addressing
Parameter 512 Meg x 4 256 Meg x 8 128 Meg x 16

Configuration 64 Meg x 4 x 8 banks 32 Meg x 8 x 8 banks 16 Meg x 16 x 8 banks
Refresh count 8K 8K 8K
Row addressing 32K (A[14:0]) 32K (A[14:0]) 16K (A[13:0])
Bank addressing 8 (BA[2:0]) 8 (BA[2:0]) 8 (BA[2:0])
Column addressing 2K (A[11, 9:0]) 1K (A[9:0]) 1K (A[9:0])
Page size 1KB 1KB 2KB
Figure 1: DDR3 Part Numbers

Example Part Number: MT41J256M8DA-125:K
- :
MT41J Configuration Package Speed Revision
{
:K / :N Revision
Configuration
512 Meg x 4 512M4 Temperatu re
256 Meg x 8 256M8 Commercial None
128 Meg x 16 128M16 Industrial temperature IT
Package Speed Grade

78-ball 8mm x 10.5mm FBGA DA -093 tCK = 0.938ns, CL = 14
78-ball 8mm x 10.5mm FBGA EF -107 tCK = 1.071ns, CL = 13
96-ball 8mm x 14mm FBGA JT -125 tCK = 1.25ns, CL = 11
96-ball 8mm x 14mm FBGA TW -15E tCK = 1.5ns, CL = 9
-187E tCK = 1.87ns, CL = 7
Note: 1. Not all options listed can be combined to define an offered product. Use the part catalog search on
http://www.micron.com for available offerings.
FBGA Part Marking Decoder

Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the
part number. For a quick conversion of an FBGA code, see the FBGA Part Marking Decoder on Micron’s Web site:
http://www.micron.com.
Features
Contents
State Diagram ................................................................................................................................................ 11
Functional Description ................................................................................................................................... 12
Industrial Temperature ............................................................................................................................... 12
General Notes ............................................................................................................................................ 12
Functional Block Diagrams ............................................................................................................................. 14
Ball Assignments and Descriptions ................................................................................................................. 16
Package Dimensions ....................................................................................................................................... 22
Electrical Specifications .................................................................................................................................. 26
Absolute Ratings ......................................................................................................................................... 26
Input/Output Capacitance .......................................................................................................................... 27
Thermal Characteristics .................................................................................................................................. 28
Electrical Specifications – IDD Specifications and Conditions ............................................................................ 31
Electrical Characteristics – IDD Specifications .................................................................................................. 42
Electrical Specifications – DC and AC .............................................................................................................. 45
DC Operating Conditions ........................................................................................................................... 45
Input Operating Conditions ........................................................................................................................ 45
AC Overshoot/Undershoot Specification ..................................................................................................... 50
Slew Rate Definitions for Single-Ended Input Signals ................................................................................... 54
Slew Rate Definitions for Differential Input Signals ...................................................................................... 56
ODT Characteristics ....................................................................................................................................... 57
ODT Resistors ............................................................................................................................................ 58
ODT Sensitivity .......................................................................................................................................... 59
ODT Timing Definitions ............................................................................................................................. 59
Output Driver Impedance ............................................................................................................................... 63
34 Ohm Output Driver Impedance .............................................................................................................. 64
34 Ohm Driver ............................................................................................................................................ 65
34 Ohm Output Driver Sensitivity ................................................................................................................ 66
Alternative 40 Ohm Driver .......................................................................................................................... 67
40 Ohm Output Driver Sensitivity ................................................................................................................ 67
Output Characteristics and Operating Conditions ............................................................................................ 69
Reference Output Load ............................................................................................................................... 71
Slew Rate Definitions for Single-Ended Output Signals ................................................................................. 72
Slew Rate Definitions for Differential Output Signals .................................................................................... 73
Speed Bin Tables ............................................................................................................................................ 74
Electrical Characteristics and AC Operating Conditions ................................................................................... 79
Command and Address Setup, Hold, and Derating ........................................................................................... 99
Data Setup, Hold, and Derating ...................................................................................................................... 107
Commands – Truth Tables ............................................................................................................................. 116
Commands ................................................................................................................................................... 119
DESELECT ................................................................................................................................................ 119
NO OPERATION ........................................................................................................................................ 119
ZQ CALIBRATION LONG ........................................................................................................................... 119
ZQ CALIBRATION SHORT .......................................................................................................................... 119
ACTIVATE ................................................................................................................................................. 119
READ ........................................................................................................................................................ 119
WRITE ...................................................................................................................................................... 120
PRECHARGE ............................................................................................................................................. 121
REFRESH .................................................................................................................................................. 121
SELF REFRESH .......................................................................................................................................... 122
DLL Disable Mode ..................................................................................................................................... 123
Features
Input Clock Frequency Change ...................................................................................................................... 127

Write Leveling ............................................................................................................................................... 129
Write Leveling Procedure ........................................................................................................................... 131
Write Leveling Mode Exit Procedure ........................................................................................................... 133
Initialization ................................................................................................................................................. 134
Mode Registers .............................................................................................................................................. 136
Mode Register 0 (MR0) ................................................................................................................................... 137
Burst Length ............................................................................................................................................. 137
Burst Type ................................................................................................................................................. 138
DLL RESET ................................................................................................................................................ 139
Write Recovery .......................................................................................................................................... 140
Precharge Power-Down (Precharge PD) ...................................................................................................... 140
CAS Latency (CL) ....................................................................................................................................... 140
Mode Register 1 (MR1) ................................................................................................................................... 142
DLL ENABLE/DISABLE .............................................................................................................................. 142
Output Drive Strength ............................................................................................................................... 143
OUTPUT ENABLE/DISABLE ...................................................................................................................... 143
TDQS ENABLE .......................................................................................................................................... 143
On-Die Termination (ODT) ........................................................................................................................ 144
WRITE LEVELING ..................................................................................................................................... 144
Posted CAS Additive Latency (AL) ............................................................................................................... 144
Mode Register 2 (MR2) ................................................................................................................................... 146
CAS WRITE Latency (CWL) ........................................................................................................................ 146
AUTO SELF REFRESH (ASR) ....................................................................................................................... 147
SELF REFRESH TEMPERATURE (SRT) ........................................................................................................ 147
SRT versus ASR .......................................................................................................................................... 148
Dynamic On-Die Termination (ODT) ......................................................................................................... 148
Mode Register 3 (MR3) ................................................................................................................................... 149
MULTIPURPOSE REGISTER (MPR) ............................................................................................................ 149
MPR Functional Description ...................................................................................................................... 150
MPR Address Definitions and Bursting Order .............................................................................................. 151
MPR Read Predefined Pattern .................................................................................................................... 156
MODE REGISTER SET (MRS) Command ........................................................................................................ 156
ZQ CALIBRATION Operation ......................................................................................................................... 157
ACTIVATE Operation ..................................................................................................................................... 158
READ Operation ............................................................................................................................................ 160
WRITE Operation .......................................................................................................................................... 171
DQ Input Timing ....................................................................................................................................... 179
PRECHARGE Operation ................................................................................................................................. 181
SELF REFRESH Operation .............................................................................................................................. 181
Extended Temperature Usage ........................................................................................................................ 183
Power-Down Mode ........................................................................................................................................ 184
RESET Operation ........................................................................................................................................... 192
On-Die Termination (ODT) ............................................................................................................................ 194
Functional Representation of ODT ............................................................................................................. 194
Nominal ODT ............................................................................................................................................ 194
Dynamic ODT ............................................................................................................................................... 196
Dynamic ODT Special Use Case ................................................................................................................. 196
Functional Description .............................................................................................................................. 196
Synchronous ODT Mode ................................................................................................................................ 202
ODT Latency and Posted ODT .................................................................................................................... 202
Timing Parameters .................................................................................................................................... 202
Features
ODT Off During READs .............................................................................................................................. 205

Asynchronous ODT Mode .............................................................................................................................. 207
Synchronous to Asynchronous ODT Mode Transition (Power-Down Entry) .................................................. 209
Asynchronous to Synchronous ODT Mode Transition (Power-Down Exit) ........................................................ 211
Asynchronous to Synchronous ODT Mode Transition (Short CKE Pulse) ...................................................... 213
Features
List of Figures
Figure 1: DDR3 Part Numbers .......................................................................................................................... 2
Figure 2: Simplified State Diagram ................................................................................................................. 11
Figure 3: 512 Meg x 4 Functional Block Diagram ............................................................................................. 14
Figure 4: 256 Meg x 8 Functional Block Diagram ............................................................................................. 15
Figure 5: 128 Meg x 16 Functional Block Diagram ........................................................................................... 15
Figure 6: 78-Ball FBGA – x4, x8 (Top View) ...................................................................................................... 16
Figure 7: 96-Ball FBGA – x16 (Top View) ......................................................................................................... 17
Figure 8: 78-Ball FBGA – x4, x8 (DA) ............................................................................................................... 22
Figure 9: 78-Ball FBGA – x4, x8 (EF) ................................................................................................................ 23
Figure 10: 96-Ball FBGA – x16 (JT) .................................................................................................................. 24
Figure 11: 96-Ball FBGA – x16 (TW) ................................................................................................................ 25
Figure 12: Thermal Measurement Point ......................................................................................................... 30
Figure 13: Input Signal .................................................................................................................................. 49
Figure 14: Overshoot ..................................................................................................................................... 50
Figure 15: Undershoot ................................................................................................................................... 51
Figure 16: V IX for Differential Signals .............................................................................................................. 52
Figure 17: Single-Ended Requirements for Differential Signals ........................................................................ 52
Figure 18: Definition of Differential AC-Swing and tDVAC ............................................................................... 53
Figure 19: Nominal Slew Rate Definition for Single-Ended Input Signals .......................................................... 55
Figure 20: Nominal Differential Input Slew Rate Definition for DQS, DQS# and CK, CK# .................................. 56
Figure 21: ODT Levels and I-V Characteristics ................................................................................................ 57
Figure 22: ODT Timing Reference Load .......................................................................................................... 60
Figure 23: tAON and tAOF Definitions ............................................................................................................ 61
Figure 24: tAONPD and tAOFPD Definitions ................................................................................................... 61
Figure 25: tADC Definition ............................................................................................................................. 62
Figure 26: Output Driver ................................................................................................................................ 63
Figure 27: DQ Output Signal .......................................................................................................................... 70
Figure 28: Differential Output Signal .............................................................................................................. 71
Figure 29: Reference Output Load for AC Timing and Output Slew Rate ........................................................... 71
Figure 30: Nominal Slew Rate Definition for Single-Ended Output Signals ....................................................... 72
Figure 31: Nominal Differential Output Slew Rate Definition for DQS, DQS# .................................................... 73
Figure 32: Nominal Slew Rate and tVAC for tIS (Command and Address – Clock) ............................................. 103
Figure 33: Nominal Slew Rate for tIH (Command and Address – Clock) ........................................................... 104
Figure 34: Tangent Line for tIS (Command and Address – Clock) .................................................................... 105
Figure 35: Tangent Line for tIH (Command and Address – Clock) .................................................................... 106
Figure 36: Nominal Slew Rate and tVAC for tDS (DQ – Strobe) ......................................................................... 112
Figure 37: Nominal Slew Rate for tDH (DQ – Strobe) ...................................................................................... 113
Figure 38: Tangent Line for tDS (DQ – Strobe) ................................................................................................ 114
Figure 39: Tangent Line for tDH (DQ – Strobe) ............................................................................................... 115
Figure 40: Refresh Mode ............................................................................................................................... 122
Figure 41: DLL Enable Mode to DLL Disable Mode ........................................................................................ 124
Figure 42: DLL Disable Mode to DLL Enable Mode ........................................................................................ 125
Figure 43: DLL Disable tDQSCK .................................................................................................................... 126
Figure 44: Change Frequency During Precharge Power-Down ........................................................................ 128
Figure 45: Write Leveling Concept ................................................................................................................. 129
Figure 46: Write Leveling Sequence ............................................................................................................... 132
Figure 47: Write Leveling Exit Procedure ....................................................................................................... 133
Figure 48: Initialization Sequence ................................................................................................................. 135
Figure 49: MRS to MRS Command Timing ( tMRD) ......................................................................................... 136
Figure 50: MRS to nonMRS Command Timing ( tMOD) .................................................................................. 137
Features
Figure 51: Mode Register 0 (MR0) Definitions ................................................................................................ 138

Figure 52: READ Latency .............................................................................................................................. 141
Figure 53: Mode Register 1 (MR1) Definition ................................................................................................. 142
Figure 54: READ Latency (AL = 5, CL = 6) ....................................................................................................... 145
Figure 56: CAS WRITE Latency ...................................................................................................................... 147
Figure 58: MPR Block Diagram ...................................................................................................................... 150
Figure 59: MPR System Read Calibration with BL8: Fixed Burst Order Single Readout ..................................... 152
Figure 60: MPR System Read Calibration with BL8: Fixed Burst Order, Back-to-Back Readout .......................... 153
Figure 61: MPR System Read Calibration with BC4: Lower Nibble, Then Upper Nibble .................................... 154
Figure 62: MPR System Read Calibration with BC4: Upper Nibble, Then Lower Nibble .................................... 155
Figure 63: ZQ CALIBRATION Timing (ZQCL and ZQCS) ................................................................................. 157
Figure 64: Example: Meeting tRRD (MIN) and tRCD (MIN) ............................................................................. 158
Figure 65: Example: tFAW ............................................................................................................................. 159
Figure 66: READ Latency .............................................................................................................................. 160
Figure 67: Consecutive READ Bursts (BL8) .................................................................................................... 162
Figure 68: Consecutive READ Bursts (BC4) .................................................................................................... 162
Figure 69: Nonconsecutive READ Bursts ....................................................................................................... 163
Figure 70: READ (BL8) to WRITE (BL8) .......................................................................................................... 163
Figure 71: READ (BC4) to WRITE (BC4) OTF .................................................................................................. 164
Figure 72: READ to PRECHARGE (BL8) .......................................................................................................... 164
Figure 73: READ to PRECHARGE (BC4) ......................................................................................................... 165
Figure 74: READ to PRECHARGE (AL = 5, CL = 6) ........................................................................................... 165
Figure 75: READ with Auto Precharge (AL = 4, CL = 6) ..................................................................................... 165
Figure 76: Data Output Timing – tDQSQ and Data Valid Window .................................................................... 167
Figure 77: Data Strobe Timing – READs ......................................................................................................... 168
Figure 78: Method for Calculating tLZ and tHZ ............................................................................................... 169
Figure 79: tRPRE Timing ............................................................................................................................... 169
Figure 80: tRPST Timing ............................................................................................................................... 170
Figure 81: tWPRE Timing .............................................................................................................................. 172
Figure 82: tWPST Timing .............................................................................................................................. 172
Figure 83: WRITE Burst ................................................................................................................................ 173
Figure 84: Consecutive WRITE (BL8) to WRITE (BL8) ..................................................................................... 174
Figure 85: Consecutive WRITE (BC4) to WRITE (BC4) via OTF ........................................................................ 174
Figure 86: Nonconsecutive WRITE to WRITE ................................................................................................. 175
Figure 87: WRITE (BL8) to READ (BL8) .......................................................................................................... 175
Figure 88: WRITE to READ (BC4 Mode Register Setting) ................................................................................. 176
Figure 89: WRITE (BC4 OTF) to READ (BC4 OTF) ........................................................................................... 177
Figure 90: WRITE (BL8) to PRECHARGE ........................................................................................................ 178
Figure 91: WRITE (BC4 Mode Register Setting) to PRECHARGE ...................................................................... 178
Figure 92: WRITE (BC4 OTF) to PRECHARGE ................................................................................................ 179
Figure 93: Data Input Timing ........................................................................................................................ 180
Figure 94: Self Refresh Entry/Exit Timing ...................................................................................................... 182
Figure 95: Active Power-Down Entry and Exit ................................................................................................ 186
Figure 96: Precharge Power-Down (Fast-Exit Mode) Entry and Exit ................................................................. 186
Figure 97: Precharge Power-Down (Slow-Exit Mode) Entry and Exit ................................................................ 187
Figure 98: Power-Down Entry After READ or READ with Auto Precharge (RDAP) ............................................. 187
Figure 99: Power-Down Entry After WRITE .................................................................................................... 188
Figure 100: Power-Down Entry After WRITE with Auto Precharge (WRAP) ...................................................... 188
Figure 101: REFRESH to Power-Down Entry .................................................................................................. 189
Figure 102: ACTIVATE to Power-Down Entry ................................................................................................. 189
Features
Figure 103: PRECHARGE to Power-Down Entry ............................................................................................. 190

Figure 104: MRS Command to Power-Down Entry ......................................................................................... 190
Figure 105: Power-Down Exit to Refresh to Power-Down Entry ....................................................................... 191
Figure 106: RESET Sequence ......................................................................................................................... 193
Figure 107: On-Die Termination ................................................................................................................... 194
Figure 108: Dynamic ODT: ODT Asserted Before and After the WRITE, BC4 .................................................... 199
Figure 109: Dynamic ODT: Without WRITE Command .................................................................................. 199
Figure 110: Dynamic ODT: ODT Pin Asserted Together with WRITE Command for 6 Clock Cycles, BL8 ............ 200
Figure 111: Dynamic ODT: ODT Pin Asserted with WRITE Command for 6 Clock Cycles, BC4 .......................... 201
Figure 112: Dynamic ODT: ODT Pin Asserted with WRITE Command for 4 Clock Cycles, BC4 .......................... 201
Figure 113: Synchronous ODT ...................................................................................................................... 203
Figure 114: Synchronous ODT (BC4) ............................................................................................................. 204
Figure 115: ODT During READs .................................................................................................................... 206
Figure 116: Asynchronous ODT Timing with Fast ODT Transition .................................................................. 208
Figure 117: Synchronous to Asynchronous Transition During Precharge Power-Down (DLL Off) Entry ............ 210
Figure 118: Asynchronous to Synchronous Transition During Precharge Power-Down (DLL Off) Exit ............... 212
Figure 119: Transition Period for Short CKE LOW Cycles with Entry and Exit Period Overlapping ..................... 214
Figure 120: Transition Period for Short CKE HIGH Cycles with Entry and Exit Period Overlapping ................... 214
Features
List of Tables
Table 1: Key Timing Parameters ....................................................................................................................... 1
Table 2: Addressing ......................................................................................................................................... 2
Table 3: 78-Ball FBGA – x4, x8 Ball Descriptions .............................................................................................. 18
Table 4: 96-Ball FBGA – x16 Ball Descriptions ................................................................................................. 20
Table 5: Absolute Maximum Ratings .............................................................................................................. 26
Table 6: DDR3 Input/Output Capacitance ...................................................................................................... 27
Table 7: Thermal Characteristics .................................................................................................................... 28
Table 8: Thermal Impedance ......................................................................................................................... 29
Table 9: Timing Parameters Used for I DD Measurements – Clock Units ............................................................ 31
Table 10: IDD0 Measurement Loop .................................................................................................................. 32
Table 12: IDD Measurement Conditions for Power-Down Currents ................................................................... 34
Table 13: IDD2N and IDD3N Measurement Loop ................................................................................................ 35
Table 14: IDD2NT Measurement Loop .............................................................................................................. 35
Table 15: IDD4R Measurement Loop ................................................................................................................ 36
Table 16: IDD4W Measurement Loop ............................................................................................................... 37
Table 17: IDD5B Measurement Loop ................................................................................................................ 38
Table 18: IDD Measurement Conditions for IDD6, IDD6ET, and IDD8 .................................................................... 39
Table 20: IDD Maximum Limits – Die Rev K ..................................................................................................... 42
Table 21: IDD Maximum Limits – Die Rev. N .................................................................................................... 44
Table 22: DC Electrical Characteristics and Operating Conditions ................................................................... 45
Table 23: DC Electrical Characteristics and Input Conditions .......................................................................... 45
Table 24: Input Switching Conditions ............................................................................................................. 46
Table 25: Differential Input Operating Conditions (CK, CK# and DQS, DQS#) .................................................. 48
Table 26: Control and Address Pins ................................................................................................................ 50
Table 27: Clock, Data, Strobe, and Mask Pins .................................................................................................. 50
Table 28: Allowed Time Before Ringback ( tDVAC) for CK - CK# and DQS - DQS# ............................................... 53
Table 29: Single-Ended Input Slew Rate Definition .......................................................................................... 54
Table 30: Differential Input Slew Rate Definition ............................................................................................. 56
Table 31: On-Die Termination DC Electrical Characteristics ............................................................................ 57
Table 32: RTT Effective Impedances ................................................................................................................ 58
Table 33: ODT Sensitivity Definition .............................................................................................................. 59
Table 34: ODT Temperature and Voltage Sensitivity ........................................................................................ 59
Table 35: ODT Timing Definitions .................................................................................................................. 60
Table 36: Reference Settings for ODT Timing Measurements ........................................................................... 60
Table 37: 34 Ohm Driver Impedance Characteristics ....................................................................................... 64
Table 38: 34 Ohm Driver Pull-Up and Pull-Down Impedance Calculations ....................................................... 65
Table 39: 34 Ohm Driver IOH/IOL Characteristics: V DD = V DDQ = 1.5V ................................................................ 65
Table 40: 34 Ohm Driver IOH/IOL Characteristics: V DD = V DDQ = 1.575V ............................................................. 65
Table 41: 34 Ohm Driver IOH/IOL Characteristics: V DD = V DDQ = 1.425V ............................................................. 66
Table 42: 34 Ohm Output Driver Sensitivity Definition .................................................................................... 66
Table 43: 34 Ohm Output Driver Voltage and Temperature Sensitivity .............................................................. 66
Table 44: 40 Ohm Driver Impedance Characteristics ....................................................................................... 67
Table 45: 40 Ohm Output Driver Sensitivity Definition .................................................................................... 67
Table 46: 40 Ohm Output Driver Voltage and Temperature Sensitivity .............................................................. 68
Table 47: Single-Ended Output Driver Characteristics ..................................................................................... 69
Table 48: Differential Output Driver Characteristics ........................................................................................ 70
Table 49: Single-Ended Output Slew Rate Definition ....................................................................................... 72
Table 50: Differential Output Slew Rate Definition .......................................................................................... 73
Features
Table 51: DDR3-1066 Speed Bins ................................................................................................................... 74

Table 56: Electrical Characteristics and AC Operating Conditions .................................................................... 79
Table 57: Electrical Characteristics and AC Operating Conditions for Speed Extensions .................................... 89
Table 58: Command and Address Setup and Hold Values Referenced – AC/DC-Based ...................................... 99
Table 59: Derating Values for tIS/tIH – AC175/DC100-Based ........................................................................... 100
Table 63: Minimum Required Time tVAC Above V IH(AC) or Below V IL(AC)for Valid Transition .............................. 102
Table 64: DDR3 Data Setup and Hold Values at 1 V/ns (DQS, DQS# at 2 V/ns) – AC/DC-Based ......................... 107
Table 65: Derating Values for tDS/tDH – AC175/DC100-Based ........................................................................ 108
Table 66: Derating Values for tDS/tDH – AC150/DC100-Based ........................................................................ 108
Table 67: Derating Values for tDS/tDH – AC135/DC100-Based at 1V/ns ........................................................... 109
Table 68: Derating Values for tDS/tDH – AC135/DC100-Based at 2V/ns ........................................................... 110
Table 69: Required Minimum Time tVAC Above V IH(AC) (Below V IL(AC)) for Valid DQ Transition ......................... 111
Table 70: Truth Table – Command ................................................................................................................. 116
Table 71: Truth Table – CKE .......................................................................................................................... 118
Table 72: READ Command Summary ............................................................................................................ 120
Table 73: WRITE Command Summary .......................................................................................................... 120
Table 74: READ Electrical Characteristics, DLL Disable Mode ......................................................................... 126
Table 75: Write Leveling Matrix ..................................................................................................................... 130
Table 76: Burst Order .................................................................................................................................... 139
Table 77: MPR Functional Description of MR3 Bits ........................................................................................ 150
Table 78: MPR Readouts and Burst Order Bit Mapping ................................................................................... 151
Table 79: Self Refresh Temperature and Auto Self Refresh Description ............................................................ 183
Table 80: Self Refresh Mode Summary ........................................................................................................... 183
Table 81: Command to Power-Down Entry Parameters .................................................................................. 184
Table 82: Power-Down Modes ....................................................................................................................... 185
Table 83: Truth Table – ODT (Nominal) ......................................................................................................... 195
Table 84: ODT Parameters ............................................................................................................................ 195
Table 85: Write Leveling with Dynamic ODT Special Case .............................................................................. 196
Table 86: Dynamic ODT Specific Parameters ................................................................................................. 197
Table 87: Mode Registers for RTT,nom ............................................................................................................. 197
Table 88: Mode Registers for RTT(WR) ............................................................................................................. 198
Table 89: Timing Diagrams for Dynamic ODT ................................................................................................ 198
Table 90: Synchronous ODT Parameters ........................................................................................................ 203
Table 91: Asynchronous ODT Timing Parameters for All Speed Bins ............................................................... 208
Table 92: ODT Parameters for Power-Down (DLL Off) Entry and Exit Transition Period ................................... 210
State Diagram
State Diagram
Figure 2: Simplified State Diagram

CKE L
Power
applied Initial- MRS, MPR,
Power Reset Self
on procedure ization write refresh
leveling
SRE
ZQCL MRS
SRX
From any
RESET
state ZQCL/ZQCS REF
ZQ
Idle Refreshing
calibration
PDE
ACT
PDX
Active Precharge
power- Activating power-
down down
PDX
CKE L CKE L
PDE
Bank
active
WRITE WRITE READ READ
WRITE AP READ AP
READ
Writing WRITE
Reading
WRITE AP READ AP
WRITE AP READ AP
PRE, PREA
Writing Reading
PRE, PREA PRE, PREA
Precharging
Automatic
sequence
Command
sequence
ACT = ACTIVATE PREA = PRECHARGE ALL SRX = Self refresh exit

MPR = Multipurpose register READ = RD, RDS4, RDS8 WRITE = WR, WRS4, WRS8
MRS = Mode register set READ AP = RDAP, RDAPS4, RDAPS8 WRITE AP = WRAP, WRAPS4, WRAPS8
PDE = Power-down entry REF = REFRESH ZQCL = ZQ LONG CALIBRATION
PDX = Power-down exit RESET = START RESET PROCEDURE ZQCS = ZQ SHORT CALIBRATION
PRE = PRECHARGE SRE = Self refresh entry
Functional Description
DDR3 SDRAM uses a double data rate architecture to achieve high-speed operation.
The double data rate architecture is an 8n-prefetch architecture with an interface de-
signed to transfer two data words per clock cycle at the I/O pins. A single read or write
operation for the DDR3 SDRAM effectively consists of a single 8n-bit-wide, four-clock-
cycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, one-
half-clock-cycle data transfers at the I/O pins.
The differential data strobe (DQS, DQS#) is transmitted externally, along with data, for
use in data capture at the DDR3 SDRAM input receiver. DQS is center-aligned with data
for WRITEs. The read data is transmitted by the DDR3 SDRAM and edge-aligned to the
data strobes.
The DDR3 SDRAM operates from a differential clock (CK and CK#). The crossing of CK
going HIGH and CK# going LOW is referred to as the positive edge of CK. Control, com-
mand, and address signals are registered at every positive edge of CK. Input data is reg-
istered on the first rising edge of DQS after the WRITE preamble, and output data is ref-
erenced on the first rising edge of DQS after the READ preamble.
Read and write accesses to the DDR3 SDRAM are burst-oriented. Accesses start at a se-
lected location and continue for a programmed number of locations in a programmed
sequence. Accesses begin with the registration of an ACTIVATE command, which is then
followed by a READ or WRITE command. The address bits registered coincident with
the ACTIVATE command are used to select the bank and row to be accessed. The ad-
dress bits registered coincident with the READ or WRITE commands are used to select
the bank and the starting column location for the burst access.
The device uses a READ and WRITE BL8 and BC4. An auto precharge function may be
enabled to provide a self-timed row precharge that is initiated at the end of the burst
access.
As with standard DDR SDRAM, the pipelined, multibank architecture of DDR3 SDRAM
allows for concurrent operation, thereby providing high bandwidth by hiding row pre-
charge and activation time.
A self refresh mode is provided, along with a power-saving, power-down mode.
Industrial Temperature
The industrial temperature (IT) device requires that the case temperature not exceed
–40°C or 95°C. JEDEC specifications require the refresh rate to double when T C exceeds
85°C; this also requires use of the high-temperature self refresh option. Additionally,
ODT resistance and the input/output impedance must be derated when T C is < 0°C or
>95°C.
General Notes
• The functionality and the timing specifications discussed in this data sheet are for the
DLL enable mode of operation (normal operation).
• Throughout this data sheet, various figures and text refer to DQs as “DQ.” DQ is to be
interpreted as any and all DQ collectively, unless specifically stated otherwise.
• The terms “DQS” and “CK” found throughout this data sheet are to be interpreted as
DQS, DQS# and CK, CK# respectively, unless specifically stated otherwise.
• Complete functionality may be described throughout the document; any page or dia-
gram may have been simplified to convey a topic and may not be inclusive of all re-
quirements.
• Any specific requirement takes precedence over a general statement.
• Any functionality not specifically stated is considered undefined, illegal, and not sup-
ported, and can result in unknown operation.
• Row addressing is denoted as A[n:0]. For example, 1Gb: n = 12 (x16); 1Gb: n = 13 (x4,
x8); 2Gb: n = 13 (x16) and 2Gb: n = 14 (x4, x8); 4Gb: n = 14 (x16); and 4Gb: n = 15 (x4,
x8).
• Dynamic ODT has a special use case: when DDR3 devices are architected for use in a
single rank memory array, the ODT ball can be wired HIGH rather than routed. Refer
to the Dynamic ODT Special Use Case section.
• A x16 device's DQ bus is comprised of two bytes. If only one of the bytes needs to be
used, use the lower byte for data transfers and terminate the upper byte as noted:
– Connect UDQS to ground via 1kΩ* resistor.
– Connect UDQS# to V DD via 1kΩ* resistor.
– Connect UDM to V DD via 1kΩ* resistor.
– Connect DQ[15:8] individually to either V SS, V DD, or V REF via 1kΩ resistors,* or float
DQ[15:8].
*If ODT is used, 1kΩ resistor should be changed to 4x that of the selected ODT.
Functional Block Diagrams

DDR3 SDRAM is a high-speed, CMOS dynamic random access memory. It is internally
configured as an 8-bank DRAM.
Figure 3: 512 Meg x 4 Functional Block Diagram
ODT
ODT
control
ZQ To pullup/pulldown
ZQ CAL
RZQ RESET# networks
ZQCL, ZQCS
CKE
Control
VSSQ A12 logic
CK, CK# VDDQ/2
BC4 (burst chop)
CS#
Columns 0, 1, and 2 RTT,nom RTT(WR)
Command
Bank 7
decode
RAS# Bank 7 CK,CK#

OTF Bank 6 Bank 6
CAS# Bank 5 SW1 SW2
Bank 5
Bank 4 Bank 4
WE# Bank 3 Bank 3
Bank 2 DLL
Bank 2
Bank 1 Bank 1 (1 . . . 4)
Refresh
15 READ
Mode registers counter
Row- Bank 0 Bank 0 FIFO 4
15 32 DQ[3:0]
address row- memory and
18 MUX address array data READ
32,768 DQ[3:0]
latch (32,768 x 256 x 32) MUX drivers DQS, DQS#
15 and
decoder
VDDQ/2
Sense amplifiers
32 BC4 RTT,nom RTT(WR)
8,192
BC4
SW1 SW2
OTF
3 I/O gating DM
DM mask logic
(1, 2) DQS, DQS#
Bank
A[14:0] Address control
BA[2:0] 18
register logic
3
VDDQ/2
256
WRITE
(x32)
32 4 drivers
Data RTT,nom RTT(WR)
interface and
Data input
Column SW1 SW2
decoder logic
Column- 8 DM
11 address
counter/
3
latch
Columns 0, 1, and 2
CK,CK# Column 2
(select upper or
lower nibble for BC4)
ODT
ODT
control
ZQ
ZQ CAL To ODT/output drivers
RZQ RESET#
CKE Control ZQCL, ZQCS
logic
VSSQ
A12
CK, CK# VDDQ/2
BC4 (burst chop)
CS#
Columns 0, 1, and 2 RTT,nom RTT(WR)
Command
Bank 7
decode
RAS# OTF Bank 7 CK, CK#

Bank 6 Bank 6
CAS# Bank 5 Bank 5 SW1 SW2
Bank 4 Bank 4
WE# Bank 3 Bank 3
Bank 2 DLL
Bank 2
Bank 1 Bank 1 (1 . . . 8)
Refresh DQ8
15 READ
Row- Bank 0 Bank 0 FIFO 8 TDQS#
15 64 DQ[7:0]
address row- Memory and
18 MUX address array data Read
32,768 (32,768 x 128 x 64) DQS, DQS# DQ[7:0]
latch MUX drivers
15 and
decoder
VDDQ/2
Sense amplifiers
64
BC4 RTT,nom RTT(WR)
8,192
BC4
OTF SW1 SW2
3 I/O gating
DM mask logic
(1, 2) DQS/DQS#
Bank
BA[2:0] 18 register logic
3
VDDQ/2
(128 Write
x64) 64 8 drivers
Data RTT,nom RTT(WR)
interface and
Data input
Column
logic SW1 SW2
decoder
Column- 7 DM/TDQS
10 address
(shared pin)
counter/
3
latch
Columns 0, 1, and 2
CK, CK# Column 2

(select upper or
ODT
ODT
control
ZQ
ZQ CAL To ODT/output drivers
RZQ RESET#
Control ZQCL, ZQCS
CKE
logic
VSSQ A12
CK, CK# VDDQ/2
BC4 (burst chop)
CS# RTT,nom RTT(WR)
Column 0, 1, and 2
Command
Bank 7
decode
RAS# Bank 7 CK, CK#

OTF Bank 6 Bank 6
Bank 5 SW1 SW2
CAS# Bank 5
Bank 4 Bank 4
WE# Bank 3 Bank 3
Bank 2 DLL
Bank 2
Bank 1 Bank 1 (1 . . . 16)
Refresh
13 READ
Row- Bank 0 Bank 0 FIFO 16
14 128 DQ[15:0]
address row- memory and
17 MUX address array data READ
16,384 DQ[15:0]
latch (16,384 x 128 x 128) MUX drivers LDQS, LDQS#, UDQS, UDQS#
14 and
decoder
VDDQ/2
Sense amplifiers
128 BC4 RTT,nom RTT(WR)
16,384
BC4 SW1 SW2
OTF LDQS, LDQS#
3 I/O gating
DM mask logic
Bank UDQS, UDQS#
(1 . . . 4)
BA[2:0] 17
register logic
3 VDDQ/2
(128
x128) WRITE
128 Data 16 drivers RTT,nom RTT(WR)
interface and
Column Data input SW2
SW1
decoder logic
Column- 7 LDM/UDM
10 address (1, 2)
counter/
3
latch Columns 0, 1, and 2
CK, CK# Column 2

(select upper or
Ball Assignments and Descriptions

Figure 6: 78-Ball FBGA – x4, x8 (Top View)
1 2 3 4 5 6 7 8 9
A
VSS VDD NC NF, NF/TDQS# VSS VDD
B
VSS VSSQ DQ0 DM, DM/TDQS VSSQ VDDQ
C
VDDQ DQ2 DQS DQ1 DQ3 VSSQ
D
VSSQ NF, DQ6 DQS# VDD VSS VSSQ
E
VREFDQ VDDQ NF, DQ4 NF, DQ7 NF, DQ5 VDDQ
F
NC VSS RAS# CK VSS NC
G
ODT VDD CAS# CK# VDD CKE
H
NC CS# WE# A10/AP ZQ NC
J
VSS BA0 BA2 NC VREFCA VSS
K
VDD A3 A0 A12/BC# BA1 VDD
L
VSS A5 A2 A1 A4 VSS
M
VDD A7 A9 A11 A6 VDD
N
VSS RESET# A13 A14 A8 VSS
Notes: 1. Ball descriptions listed in Table 3 (page 18) are listed as “x4, x8” if unique; otherwise,
x4 and x8 are the same.
2. A comma separates the configuration; a slash defines a selectable function.
Example: D7 = NF, NF/TDQS#. NF applies to the x4 configuration only. NF/TDQS# applies
to the x8 configuration only—selectable between NF or TDQS# via MRS (symbols are de-
fined in Table 3).
Figure 7: 96-Ball FBGA – x16 (Top View)
1 2 3 4 5 6 7 8 9
A
VDDQ DQ13 DQ15 DQ12 VDDQ VSS
B
VSSQ VDD VSS VSSQ
UDQS# DQ14
C
VDDQ DQ11 DQ9 UDQS DQ10 VDDQ
D
VSSQ VDDQ UDM DQ8 VSSQ VDD
E
VSS VSSQ DQ0 LDM VSSQ VDDQ
F
VDDQ DQ2 LDQS DQ1 DQ3 VSSQ
G
VSSQ DQ6 LDQS# VDD VSS VSSQ
H
VREFDQ VDDQ DQ4 DQ7 DQ5 VDDQ
J
NC VSS RAS# CK VSS NC
K
ODT VDD CAS# CK# VDD CKE
L
NC CS# WE# A10/AP ZQ NC
M
VSS BA0 BA2 NC VREFCA VSS
N
VDD A3 A0 A12/BC# BA1 VDD
P
VSS A5 A2 A1 A4 VSS
R
VDD A7 A9 A11 A6 VDD
T
VSS RESET# A13 NC A8 VSS
Note: 1. Ball descriptions listed in Table 4 (page 20).
Table 3: 78-Ball FBGA – x4, x8 Ball Descriptions
Symbol Type Description

A[14:13], A12/BC#, Input Address inputs: Provide the row address for ACTIVATE commands, and the column
A11, A10/AP, A[9:0] address and auto precharge bit (A10) for READ/WRITE commands, to select one
location out of the memory array in the respective bank. A10 sampled during a
PRECHARGE command determines whether the PRECHARGE applies to one bank
(A10 LOW, bank selected by BA[2:0]) or all banks (A10 HIGH). The address inputs also
provide the op-code during a LOAD MODE command. Address inputs are referenced
to VREFCA. A12/BC#: When enabled in the mode register (MR), A12 is sampled during
READ and WRITE commands to determine whether burst chop (on-the-fly) will be
performed (HIGH = BL8 or no burst chop, LOW = BC4). See Table 70 (page 116).
BA[2:0] Input Bank address inputs: BA[2:0] define the bank to which an ACTIVATE, READ,
WRITE, or PRECHARGE command is being applied. BA[2:0] define which mode
register (MR0, MR1, MR2, or MR3) is loaded during the LOAD MODE command.
BA[2:0] are referenced to VREFCA.
CK, CK# Input Clock: CK and CK# are differential clock inputs. All control and address input signals
are sampled on the crossing of the positive edge of CK and the negative edge of
CK#. Output data strobe (DQS, DQS#) is referenced to the crossings of CK and CK#.
CKE Input Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal
circuitry and clocks on the DRAM. The specific circuitry that is enabled/disabled is de-
pendent upon the DDR3 SDRAM configuration and operating mode. Taking CKE
LOW provides PRECHARGE POWER-DOWN and SELF REFRESH operations (all banks
idle), or active power-down (row active in any bank). CKE is synchronous for power-
down entry and exit and for self refresh entry. CKE is asynchronous for self refresh
exit. Input buffers (excluding CK, CK#, CKE, RESET#, and ODT) are disabled during
POWER-DOWN. Input buffers (excluding CKE and RESET#) are disabled during SELF
REFRESH. CKE is referenced to VREFCA.
CS# Input Chip select: CS# enables (registered LOW) and disables (registered HIGH) the
command decoder. All commands are masked when CS# is registered HIGH. CS#
provides for external rank selection on systems with multiple ranks. CS# is considered
part of the command code. CS# is referenced to VREFCA.
DM Input Input data mask: DM is an input mask signal for write data. Input data is masked
when DM is sampled HIGH along with the input data during a write access.
Although the DM ball is input-only, the DM loading is designed to match that of the
DQ and DQS balls. DM is referenced to VREFDQ. DM has an optional use as TDQS on
the x8.
ODT Input On-die termination: ODT enables (registered HIGH) and disables (registered LOW)
termination resistance internal to the DDR3 SDRAM. When enabled in normal
operation, ODT is only applied to each of the following balls: DQ[7:0], DQS, DQS#,
and DM for the x8; DQ[3:0], DQS, DQS#, and DM for the x4. The ODT input is
ignored if disabled via the LOAD MODE command. ODT is referenced to VREFCA.
RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command
being entered and are referenced to VREFCA.
RESET# Input Reset: RESET# is an active LOW CMOS input referenced to VSS. The RESET# input re-
ceiver is a CMOS input defined as a rail-to-rail signal with DC HIGH ≥ 0.8 × VDD and
DC LOW ≤ 0.2 × VDDQ. RESET# assertion and de-assertion are asynchronous.
Table 3: 78-Ball FBGA – x4, x8 Ball Descriptions (Continued)

DQ[3:0] I/O Data input/output: Bidirectional data bus for the x4 configuration. DQ[3:0] are
referenced to VREFDQ.
DQ[7:0] I/O Data input/output: Bidirectional data bus for the x8 configuration. DQ[7:0] are
referenced to VREFDQ.
DQS, DQS# I/O Data strobe: Output with read data. Edge-aligned with read data. Input with write
data. Center-aligned to write data.
TDQS, TDQS# Output Termination data strobe: Applies to the x8 configuration only. When TDQS is
enabled, DM is disabled, and the TDQS and TDQS# balls provide termination
resistance.
VDD Supply Power supply: 1.5V ±0.075V.
VDDQ Supply DQ power supply: 1.5V ±0.075V. Isolated on the device for improved noise immuni-
ty.
VREFCA Supply Reference voltage for control, command, and address: VREFCA must be
maintained at all times (including self refresh) for proper device operation.
VREFDQ Supply Reference voltage for data: VREFDQ must be maintained at all times (excluding self
refresh) for proper device operation.
VSS Supply Ground.
VSSQ Supply DQ ground: Isolated on the device for improved noise immunity.
ZQ Reference External reference ball for output drive calibration: This ball is tied to external
240Ω resistor RZQ, which is tied to VSSQ.
NC – No connect: These balls should be left unconnected (the ball has no connection to
the DRAM or to other balls).
NF – No function: When configured as a x4 device, these balls are NF. When configured
as a x8 device, these balls are defined as TDQS#, DQ[7:4].
Table 4: 96-Ball FBGA – x16 Ball Descriptions

A13, A12/BC#, A11, Input Address inputs: Provide the row address for ACTIVATE commands, and the column
A10/AP, A[9:0] address and auto precharge bit (A10) for READ/WRITE commands, to select one
location out of the memory array in the respective bank. A10 sampled during a
PRECHARGE command determines whether the PRECHARGE applies to one bank (A10
LOW, bank selected by BA[2:0]) or all banks (A10 HIGH). The address inputs also pro-
vide the op-code during a LOAD MODE command. Address inputs are referenced to
VREFCA. A12/BC#: When enabled in the mode register (MR), A12 is sampled during READ
and WRITE commands to determine whether burst chop (on-the-fly) will be performed
(HIGH = BL8 or no burst chop, LOW = BC4). See Table 70 (page 116).
BA[2:0] Input Bank address inputs: BA[2:0] define the bank to which an ACTIVATE, READ, WRITE,
or PRECHARGE command is being applied. BA[2:0] define which mode
register (MR0, MR1, MR2, or MR3) is loaded during the LOAD MODE command. BA[2:0]
are referenced to VREFCA.
CK, CK# Input Clock: CK and CK# are differential clock inputs. All control and address input signals
are sampled on the crossing of the positive edge of CK and the negative edge of CK#.
Output data strobe (DQS, DQS#) is referenced to the crossings of CK and CK#.
CKE Input Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal
circuitry and clocks on the DRAM. The specific circuitry that is enabled/disabled is de-
pendent upon the DDR3 SDRAM configuration and operating mode. Taking CKE LOW
provides PRECHARGE POWER-DOWN and SELF REFRESH operations (all banks idle),or
active power-down (row active in any bank). CKE is synchronous for
power-down entry and exit and for self refresh entry. CKE is asynchronous for self re-
fresh exit. Input buffers (excluding CK, CK#, CKE, RESET#, and ODT) are disabled during
POWER-DOWN. Input buffers (excluding CKE and RESET#) are disabled during SELF RE-
FRESH. CKE is referenced to VREFCA.
CS# Input Chip select: CS# enables (registered LOW) and disables (registered HIGH) the com-
mand decoder. All commands are masked when CS# is registered HIGH. CS#
provides for external rank selection on systems with multiple ranks. CS# is considered
part of the command code. CS# is referenced to VREFCA.
LDM Input Input data mask: LDM is a lower-byte, input mask signal for write data. Lower-byte
input data is masked when LDM is sampled HIGH along with the input data during a
write access. Although the LDM ball is input-only, the LDM loading is designed to
match that of the DQ and DQS balls. LDM is referenced to VREFDQ.
ODT Input On-die termination: ODT enables (registered HIGH) and disables (registered LOW)
termination resistance internal to the DDR3 SDRAM. When enabled in normal
operation, ODT is only applied to each of the following balls: DQ[15:0], LDQS, LDQS#,
UDQS, UDQS#, LDM, and UDM. The ODT input is ignored if disabled via the LOAD
MODE command. ODT is referenced to VREFCA.
RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command
being entered and are referenced to VREFCA.
RESET# Input Reset: RESET# is an active LOW CMOS input referenced to VSS. The RESET# input re-
ceiver is a CMOS input defined as a rail-to-rail signal with DC HIGH ≥ 0.8 × VDD and DC
LOW ≤ 0.2 × VDDQ. RESET# assertion and de-assertion are asynchronous.
Table 4: 96-Ball FBGA – x16 Ball Descriptions (Continued)

UDM Input Input data mask: UDM is an upper-byte, input mask signal for write data. Upper-byte
input data is masked when UDM is sampled HIGH along with that input data during a
WRITE access. Although the UDM ball is input-only, the UDM loading is designed to
match that of the DQ and DQS balls. UDM is referenced to VREFDQ.
DQ[7:0] I/O Data input/output: Lower byte of bidirectional data bus for the x16 configuration.
DQ[7:0] are referenced to VREFDQ.
DQ[15:8] I/O Data input/output: Upper byte of bidirectional data bus for the x16 configuration.
DQ[15:8] are referenced to VREFDQ.
LDQS, LDQS# I/O Lower byte data strobe: Output with read data. Edge-aligned with read data. Input
with write data. Center-aligned to write data.
UDQS, UDQS# I/O Upper byte data strobe: Output with read data. Edge-aligned with read data. Input
with write data. DQS is center-aligned to write data.
VDD Supply Power supply: 1.5V ±0.075V.
VDDQ Supply DQ power supply: 1.5V ±0.075V. Isolated on the device for improved noise immunity.
VREFCA Supply Reference voltage for control, command, and address: VREFCA must be main-
tained at all times (including self refresh) for proper device operation.
VREFDQ Supply Reference voltage for data: VREFDQ must be maintained at all times (excluding self
refresh) for proper device operation.
VSS Supply Ground.
VSSQ Supply DQ ground: Isolated on the device for improved noise immunity.
ZQ Reference External reference ball for output drive calibration: This ball is tied to external
240Ω resistor RZQ, which is tied to VSSQ.
NC – No connect: These balls should be left unconnected (the ball has no connection to the
DRAM or to other balls).
Package Dimensions
Package Dimensions
Figure 8: 78-Ball FBGA – x4, x8 (DA)
0.155
Seating plane
1.8 CTR
A 0.12 A
78X Ø0.45 Nonconductive
Dimensions apply overmold
to solder balls post-
reflow on Ø0.35 SMD Ball A1 ID Ball A1 ID
ball pads. 9 8 7 3 2 1
A
B
C
D
E
10.5 ±0.1 F
9.6 CTR G
H
J
K
L
M
0.8 TYP
N
0.8 TYP 1.1 ±0.1

6.4 CTR 0.25 MIN
8 ±0.1
Notes: 1. All dimensions are in millimeters.
2. Solder ball material: SAC305 (96.5% Sn, 3% Ag, 0.5% Cu).
Package Dimensions
Figure 9: 78-Ball FBGA – x4, x8 (EF)

0.155
Seating plane
A 0.12 A
1.8 CTR
Nonconductive
overmold
78X Ø0.47
Dimensions apply Ball A1 ID
to solder balls post- Ball A1 ID
(covered by SR)
reflow on Ø0.42 SMD
ball pads. 9 8 7 3 2 1
A
B
C
D
10.5 ±0.1 E
F
9.6 CTR G
H
J
K
L
M
0.8 TYP N
0.8 TYP 1.1 ±0.1
6.4 CTR 0.29 MIN
8 ±0.1

2. Material composition: Pb-free SAC302 (96.8% Sn, 3% Ag, 0.2% Cu).
Package Dimensions
Figure 10: 96-Ball FBGA – x16 (JT)
0.155
Seating plane
A 0.12 A
1.8 CTR
Nonconductive
overmold
96X Ø0.45
Dimensions apply
to solder balls post- Ball A1 ID Ball A1 ID
reflow on Ø0.35
SMD ball pads. 9 8 7 3 2 1
F
14 ±0.1
G
H
12 CTR
J
R
0.8 TYP
T
0.8 TYP 1.1 ±0.1
6.4 CTR 0.25 MIN
8 ±0.1

2. Solder ball material: SAC305 (96.5% Sn, 3% Ag, 0.5% Cu).
Package Dimensions
Figure 11: 96-Ball FBGA – x16 (TW)

0.155
Seating plane
A 0.12 A
1.8 CTR
Nonconductive
overmold
96X Ø0.47
Dimensions apply
to solder balls post- Ball A1 ID Ball A1 ID
reflow on Ø0.42 SMD (covered by SR)
ball pads. 9 8 7 3 2 1
A
B
C
D
E
F
14 ±0.1 G
H
12 CTR J
K
L
M
N
P
R
0.8 TYP T
0.8 TYP 1.1 ±0.1
6.4 CTR 0.34 ±0.05
8 ±0.1

2. Material composition: Pb-free SAC302 (96.8% Sn, 3% Ag, 0.2% Cu).
Electrical Specifications
Absolute Ratings
Stresses greater than those listed in Table 5 may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other
conditions outside those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods
may adversely affect reliability.
Table 5: Absolute Maximum Ratings
Symbol Parameter Min Max Unit Notes

VDD VDD supply voltage relative to VSS –0.4 1.975 V 1
VDDQ VDD supply voltage relative to VSSQ –0.4 1.975 V
VIN, VOUT Voltage on any pin relative to VSS –0.4 1.975 V
TC Operating case temperature - Commercial 0 95 °C 2, 3
Operating case temperature - Industrial –40 95 °C 2, 3
Operating case temperature - Automotive –40 105 °C 2, 3
TSTG Storage temperature –55 150 °C
Notes: 1. VDD and VDDQ must be within 300mV of each other at all times, and VREF must not be
greater than 0.6 × VDDQ. When VDD and VDDQ are <500mV, VREF can be ≤300mV.
2. MAX operating case temperature. TC is measured in the center of the package.
3. Device functionality is not guaranteed if the DRAM device exceeds the maximum TC dur-
ing operation.
Input/Output Capacitance
Table 6: DDR3 Input/Output Capacitance

Note 1 applies to the entire table
Capacitance 800 1066 1333 1600 1866 2133
Parameters Symbol Min Max Min Max Min Max Min Max Min Max Min Max Unit Notes
CK and CK# CCK 0.8 1.6 0.8 1.6 0.8 1.4 0.8 1.4 0.8 1.3 0.8 1.3 pF
ΔC: CK to CK# CDCK 0 0.15 0 0.15 0 0.15 0 0.15 0 0.15 0 0.15 pF
Single-end I/O: CIO 1.5 3.0 1.5 2.7 1.5 2.5 1.5 2.3 1.5 2.2 1.5 2.1 pF 2
DQ, DM
Differential I/O: CIO 1.5 3.0 1.5 2.7 1.5 2.5 1.5 2.3 1.5 2.2 1.5 2.1 pF 3
DQS, DQS#,
TDQS, TDQS#
ΔC: DQS to CDDQS 0 0.2 0 0.2 0 0.15 0 0.15 0 0.15 0 0.15 pF 3
DQS#, TDQS,
TDQS#
ΔC: DQ to DQS CDIO –0.5 0.3 –0.5 0.3 –0.5 0.3 –0.5 0.3 –0.5 0.3 –0.5 0.3 pF 4
Inputs (CTRL, CI 0.75 1.4 0.75 1.35 0.75 1.3 0.75 1.3 0.75 1.2 0.75 1.2 pF 5
CMD, ADDR)
ΔC: CTRL to CK CDI_CTRL –0.5 0.3 –0.5 0.3 –0.4 0.2 –0.4 0.2 –0.4 0.2 –0.4 0.2 pF 6
ΔC: CMD_ADDR CDI_CMD_ –0.5 0.5 –0.5 0.5 –0.4 0.4 –0.4 0.4 –0.4 0.4 –0.4 0.4 pF 7
to CK ADDR
ZQ pin capaci- CZQ – 3.0 – 3.0 – 3.0 – 3.0 – 3.0 – 3.0 pF
tance
Reset pin capaci- CRE – 3.0 – 3.0 – 3.0 – 3.0 – 3.0 – 3.0 pF
tance
Notes: 1. VDD = 1.5V ±0.075mV, VDDQ = VDD, VREF = VSS, f = 100 MHz, TC = 25°C. VOUT(DC) = 0.5 ×
VDDQ, VOUT = 0.1V (peak-to-peak).
2. DM input is grouped with I/O pins, reflecting the fact that they are matched in loading.
3. Includes TDQS, TDQS#. CDDQS is for DQS vs. DQS# and TDQS vs. TDQS# separately.
4. CDIO = CIO(DQ) - 0.5 × (CIO(DQS) + CIO(DQS#)).
5. Excludes CK, CK#; CTRL = ODT, CS#, and CKE; CMD = RAS#, CAS#, and WE#; ADDR =
A[n:0], BA[2:0].
6. CDI_CTRL = CI(CTRL) - 0.5 × (CCK(CK) + CCK(CK#)).
7. CDI_CMD_ADDR = CI(CMD_ADDR) - 0.5 × (CCK(CK) + CCK(CK#)).
Thermal Characteristics
Table 7: Thermal Characteristics
Parameter/Condition Value Unit Symbol Notes

Operating case temperature – 0 to +85 °C TC 1, 2, 3
Commercial 0 to +95 °C TC 1, 2, 3, 4
Operating case temperature – –40 to +85 °C TC 1, 2, 3
Industrial –40 to +95 °C TC 1, 2, 3, 4
Notes: 1. Maximum operating case temperature. TC is measured in the center of the package.
2. A thermal solution must be designed to ensure the DRAM device does not exceed TC
MAX during operation.
3. Device functionality is not guaranteed if the DRAM device exceeds TC MAX during oper-
ation.
4. If TC exceeds 85°C, the DRAM must be refreshed externally at 2x refresh, which is a 3.9μs
interval refresh rate. The use of SRT or ASR must be enabled.
5. Thermal resistance data is based on a number of samples from multiple lots and should
be viewed as a typical number.
Table 8: Thermal Impedance
Θ JA (°C/W) Θ JA (°C/W) Θ JA (°C/W)

Airflow = Airflow = Airflow =
Die Rev. Package Substrate 0m/s 1m/s 2m/s Θ JB (°C/W) Θ JC (°C/W)
Low conduc-
70.4 56.5 50.8 N/A 6.5
tivity
78-ball
High con-
49.2 42.4 39.3 36.1 N/A
ductivity
K
Low conduc-
65.3 52.4 47.1 N/A 6.5
tivity
96-ball
High con-
46.4 40.0 37.2 34.8 N/A
ductivity
Low conduc-
61.8 50.0 45.3 N/A 8.3
tivity
78-ball
High con-
40.3 34.9 32.9 27.0 N/A
ductivity
N
Low conduc-
60.2 48.0 43.5 N/A 8.2
tivity
96-ball
High con-
39.4 33.9 31.9 26.2 N/A
ductivity
Note: 1. Thermal resistance data is based on a number of samples from multiple lots and should
be viewed as a typical number.
Figure 12: Thermal Measurement Point
(L/2)
Tc test point
(W/2)
Electrical Specifications – IDD Specifications and Conditions

Within the following IDD measurement tables, the following definitions and conditions
are used, unless stated otherwise:
• LOW: V IN ≤ V IL(AC)max; HIGH: V IN ≥ V IH(AC)min.
• Midlevel: Inputs are V REF = V DD/2.
• RON set to RZQ/7 (34Ω).
• RTT,nom set to RZQ/6 (40Ω).
• RTT(WR) set to RZQ/2 (120Ω).
• QOFF is enabled in MR1.
• ODT is enabled in MR1 (RTT,nom) and MR2 (RTT(WR)).
• TDQS is disabled in MR1.
• External DQ/DQS/DM load resistor is 25Ω to V DDQ/2.
• Burst lengths are BL8 fixed.
• AL equals 0 (except in IDD7).
• IDD specifications are tested after the device is properly initialized.
• Input slew rate is specified by AC parametric test conditions.
• Optional ASR is disabled.
• Read burst type uses nibble sequential (MR0[3] = 0).
• Loop patterns must be executed at least once before current measurements begin.
Table 9: Timing Parameters Used for IDD Measurements – Clock Units
DDR3L DDR3L
DDR3L-800 DDR3L-1066 DDR3L-1333 DDR3L-1600 -1866 -2133
IDD -25E -25 -187E -187 -15E -15 -125E -125 -107 -093
Parameter 5-5-5 6-6-6 7-7-7 8-8-8 9-9-9 10-10-10 10-10-10 11-11-11 13-13-13 14-14-14 Unit
tCK (MIN) IDD 2.5 1.875 1.5 1.25 1.07 0.938 ns
CL IDD 5 6 7 8 9 10 10 11 13 14 CK
tRCD (MIN) IDD 5 6 7 8 9 10 10 11 13 14 CK
tRC (MIN) IDD 20 21 27 28 33 34 38 39 45 50 CK
tRAS (MIN) IDD 15 15 20 20 24 24 28 28 32 36 CK
tRP (MIN) 5 6 7 8 9 10 10 11 13 14 CK
tFAW x4, x8 16 16 20 20 20 20 24 24 26 27 CK
x16 20 20 27 27 30 30 32 32 33 38 CK
tRRD x4, x8 4 4 4 4 4 4 5 5 5 6 CK
IDD x16 4 4 6 6 5 5 6 6 6 7 CK
tRFC 1Gb 44 44 59 59 74 74 88 88 103 118 CK
2Gb 64 64 86 86 107 107 128 128 150 172 CK
4Gb 104 104 139 139 174 174 208 208 243 279 CK
8Gb 140 140 187 187 234 234 280 280 328 375 CK
Table 10: IDD0 Measurement Loop
Command
A[15:11]
Number
CK, CK#
BA[2:0]
A[9:7]
A[6:3]
A[2:0]
A[10]
RAS#
CAS#
Loop
Data
WE#
ODT
CKE
Sub-
CS#
Cycle
0 ACT 0 0 1 1 0 0 0 0 0 0 0 –
1 D 1 0 0 0 0 0 0 0 0 0 0 –
2 D 1 0 0 0 0 0 0 0 0 0 0 –
3 D# 1 1 1 1 0 0 0 0 0 0 0 –
4 D# 1 1 1 1 0 0 0 0 0 0 0 –
Repeat cycles 1 through 4 until nRAS - 1; truncate if needed
nRAS PRE 0 0 1 0 0 0 0 0 0 0 0 –
Repeat cycles 1 through 4 until nRC - 1; truncate if needed
0
nRC ACT 0 0 1 1 0 0 0 0 0 F 0 –
nRC + 1 D 1 0 0 0 0 0 0 0 0 F 0 –
Static HIGH
nRC + 2 D 1 0 0 0 0 0 0 0 0 F 0 –
Toggling
nRC + 3 D# 1 1 1 1 0 0 0 0 0 F 0 –
nRC + 4 D# 1 1 1 1 0 0 0 0 0 F 0 –
Repeat cycles nRC + 1 through nRC + 4 until nRC - 1 + nRAS -1; truncate if needed
nRC + nRAS PRE 0 0 1 0 0 0 0 0 0 F 0 –
Repeat cycles nRC + 1 through nRC + 4 until 2 × RC - 1; truncate if needed
1 2 × nRC Repeat sub-loop 0, use BA[2:0] = 1
Notes: 1. DQ, DQS, DQS# are midlevel.

2. DM is LOW.
3. Only selected bank (single) active.
Command
Sub-Loop
A[15:11]
Number
CK, CK#
BA[2:0]
A[9:7]
A[6:3]
A[2:0]
Data2
A[10]
RAS#
CAS#
WE#
ODT
CKE
CS#
Cycle
0 ACT 0 0 1 1 0 0 0 0 0 0 0 –
1 D 1 0 0 0 0 0 0 0 0 0 0 –
2 D 1 0 0 0 0 0 0 0 0 0 0 –
3 D# 1 1 1 1 0 0 0 0 0 0 0 –
4 D# 1 1 1 1 0 0 0 0 0 0 0 –
Repeat cycles 1 through 4 until nRCD - 1; truncate if needed
nRCD RD 0 1 0 1 0 0 0 0 0 0 0 00000000
Repeat cycles 1 through 4 until nRAS - 1; truncate if needed
nRAS PRE 0 0 1 0 0 0 0 0 0 0 0 –
Repeat cycles 1 through 4 until nRC - 1; truncate if needed
0
nRC ACT 0 0 1 1 0 0 0 0 0 F 0 –
nRC + 1 D 1 0 0 0 0 0 0 0 0 F 0 –
Static HIGH
nRC + 2 D 1 0 0 0 0 0 0 0 0 F 0 –
Toggling
nRC + 3 D# 1 1 1 1 0 0 0 0 0 F 0 –
nRC + 4 D# 1 1 1 1 0 0 0 0 0 F 0 –
Repeat cycles nRC + 1 through nRC + 4 until nRC + nRCD - 1; truncate if needed
nRC + nRCD RD 0 1 0 1 0 0 0 0 0 F 0 00110011
Repeat cycles nRC + 1 through nRC + 4 until nRC + nRAS - 1; truncate if needed
nRC + nRAS PRE 0 0 1 0 0 0 0 0 0 F 0 –
Repeat cycle nRC + 1 through nRC + 4 until 2 × nRC - 1; truncate if needed
Notes: 1. DQ, DQS, DQS# are midlevel unless driven as required by the RD command.
2. DM is LOW.
3. Burst sequence is driven on each DQ signal by the RD command.
4. Only selected bank (single) active.
Table 12: IDD Measurement Conditions for Power-Down Currents
IDD2P0 Precharge IDD2P1 Precharge IDD2Q Precharge IDD3P Active

Power-Down Power-Down Quiet Power-Down
Name Current (Slow Exit)1 Current (Fast Exit)1 Standby Current Current
Timing pattern N/A N/A N/A N/A
CKE LOW LOW HIGH LOW
External clock Toggling Toggling Toggling Toggling
tCK tCK (MIN) IDD tCK (MIN) IDD tCK (MIN) IDD tCK (MIN) IDD
tRC N/A N/A N/A N/A
tRAS N/A N/A N/A N/A
tRCD N/A N/A N/A N/A
tRRD N/A N/A N/A N/A
tRC N/A N/A N/A N/A
CL N/A N/A N/A N/A
AL N/A N/A N/A N/A
CS# HIGH HIGH HIGH HIGH
Command inputs LOW LOW LOW LOW
Row/column addr LOW LOW LOW LOW
Bank addresses LOW LOW LOW LOW
DM LOW LOW LOW LOW
Data I/O Midlevel Midlevel Midlevel Midlevel
Output buffer DQ, DQS Enabled Enabled Enabled Enabled
ODT2 Enabled, off Enabled, off Enabled, off Enabled, off
Burst length 8 8 8 8
Active banks None None None All
Idle banks All All All None
Special notes N/A N/A N/A N/A
Notes: 1. MR0[12] defines DLL on/off behavior during precharge power-down only; DLL on (fast
exit, MR0[12] = 1) and DLL off (slow exit, MR0[12] = 0).
2. “Enabled, off” means the MR bits are enabled, but the signal is LOW.
Table 13: IDD2N and IDD3N Measurement Loop
Command
Sub-Loop
A[15:11]
Number
CK, CK#
BA[2:0]
A[9:7]
A[6:3]
A[2:0]
A[10]
RAS#
CAS#
Data
WE#
ODT
CKE
CS#
Cycle
0 D 1 0 0 0 0 0 0 0 0 0 0 –
1 D 1 0 0 0 0 0 0 0 0 0 0 –
0
2 D# 1 1 1 1 0 0 0 0 0 F 0 –
3 D# 1 1 1 1 0 0 0 0 0 F 0 –
Static HIGH
1 4–7 Repeat sub-loop 0, use BA[2:0] = 1

Toggling


2. DM is LOW.
3. All banks closed during IDD2N; all banks open during IDD3N.
Table 14: IDD2NT Measurement Loop

Command
Sub-Loop
A[15:11]
Number
CK, CK#
BA[2:0]
A[9:7]
A[6:3]
A[2:0]
A[10]
RAS#
CAS#
Data
WE#
ODT
CKE
CS#
Cycle
0 D 1 0 0 0 0 0 0 0 0 0 0 –
1 D 1 0 0 0 0 0 0 0 0 0 0 –
0
2 D# 1 1 1 1 0 0 0 0 0 F 0 –
3 D# 1 1 1 1 0 0 0 0 0 F 0 –
Static HIGH
1 4–7 Repeat sub-loop 0, use BA[2:0] = 1; ODT = 0

Toggling


2. DM is LOW.
3. All banks closed.
Table 15: IDD4R Measurement Loop
Command
Sub-Loop
A[15:11]
Number
CK, CK#
BA[2:0]
A[9:7]
A[6:3]
A[2:0]
Data3
A[10]
RAS#
CAS#
WE#
ODT
CKE
CS#
Cycle
0 RD 0 1 0 1 0 0 0 0 0 0 0 00000000
1 D 1 0 0 0 0 0 0 0 0 0 0 –
2 D# 1 1 1 1 0 0 0 0 0 0 0 –
3 D# 1 1 1 1 0 0 0 0 0 0 0 –
0
4 RD 0 1 0 1 0 0 0 0 0 F 0 00110011
5 D 1 0 0 0 0 0 0 0 0 F 0 –
Static HIGH
6 D# 1 1 1 1 0 0 0 0 0 F 0 –
Toggling
7 D# 1 1 1 1 0 0 0 0 0 F 0 –
Notes: 1. DQ, DQS, DQS# are midlevel when not driving in burst sequence.
2. DM is LOW.
4. All banks open.
Table 16: IDD4W Measurement Loop
Command
Sub-Loop
A[15:11]
Number
CK, CK#
BA[2:0]
A[9:7]
A[6:3]
A[2:0]
Data3
A[10]
RAS#
CAS#
WE#
ODT
CKE
CS#
Cycle
0 WR 0 1 0 0 1 0 0 0 0 0 0 00000000
1 D 1 0 0 0 1 0 0 0 0 0 0 –
2 D# 1 1 1 1 1 0 0 0 0 0 0 –
3 D# 1 1 1 1 1 0 0 0 0 0 0 –
0
4 WR 0 1 0 0 1 0 0 0 0 F 0 00110011
5 D 1 0 0 0 1 0 0 0 0 F 0 –
Static HIGH
6 D# 1 1 1 1 1 0 0 0 0 F 0 –
Toggling
7 D# 1 1 1 1 1 0 0 0 0 F 0 –
Notes: 1. DQ, DQS, DQS# are midlevel when not driving in burst sequence.
2. DM is LOW.
3. Burst sequence is driven on each DQ signal by the WR command.
4. All banks open.
Table 17: IDD5B Measurement Loop
Command
Sub-Loop
A[15:11]
Number
CK, CK#
BA[2:0]
A[9:7]
A[6:3]
A[2:0]
A[10]
RAS#
CAS#
Data
WE#
ODT
CKE
CS#
Cycle
0 0 REF 0 0 0 1 0 0 0 0 0 0 0 –
1 D 1 0 0 0 0 0 0 0 0 0 0 –
2 D 1 0 0 0 0 0 0 0 0 0 0 –
1a
3 D# 1 1 1 1 0 0 0 0 0 F 0 –
4 D# 1 1 1 1 0 0 0 0 0 F 0 –
Static HIGH
1b 5–8 Repeat sub-loop 1a, use BA[2:0] = 1

Toggling
1c 9–12 Repeat sub-loop 1a, use BA[2:0] = 2

1d 13–16 Repeat sub-loop 1a, use BA[2:0] = 3
1e 17–20 Repeat sub-loop 1a, use BA[2:0] = 4
1f 21–24 Repeat sub-loop 1a, use BA[2:0] = 5
1g 25–28 Repeat sub-loop 1a, use BA[2:0] = 6
1h 29–32 Repeat sub-loop 1a, use BA[2:0] = 7
2 33–nRFC - 1 Repeat sub-loop 1a through 1h until nRFC - 1; truncate if needed

2. DM is LOW.
Table 18: IDD Measurement Conditions for IDD6, IDD6ET, and IDD8
IDD6: Self Refresh Current IDD6ET: Self Refresh Current

Normal Temperature Range Extended Temperature Range
IDD Test TC = 0°C to +85°C TC = 0°C to +95°C IDD8: Reset2
CKE LOW LOW Midlevel
External clock Off, CK and CK# = LOW Off, CK and CK# = LOW Midlevel
tCK N/A N/A N/A
tRC N/A N/A N/A
tRAS N/A N/A N/A
tRCD N/A N/A N/A
tRRD N/A N/A N/A
tRC N/A N/A N/A
CL N/A N/A N/A
AL N/A N/A N/A
CS# Midlevel Midlevel Midlevel
Command inputs Midlevel Midlevel Midlevel
Row/column addresses Midlevel Midlevel Midlevel
Bank addresses Midlevel Midlevel Midlevel
Data I/O Midlevel Midlevel Midlevel
Output buffer DQ, DQS Enabled Enabled Midlevel
ODT1 Enabled, midlevel Enabled, midlevel Midlevel
Burst length N/A N/A N/A
Active banks N/A N/A None
Idle banks N/A N/A All
SRT Disabled (normal) Enabled (extended) N/A
ASR Disabled Disabled N/A
Notes: 1. “Enabled, midlevel” means the MR command is enabled, but the signal is midlevel.
2. During a cold boot RESET (initialization), current reading is valid after power is stable
and RESET has been LOW for 1ms; During a warm boot RESET (while operating), current
reading is valid after RESET has been LOW for 200ns + tRFC.
Command
Sub-Loop
A[15:11]
Number
CK, CK#
BA[2:0]
A[9:7]
A[6:3]
A[2:0]
Data3
A[10]
RAS#
CAS#
WE#
ODT
CKE
CS#
Cycle
0 ACT 0 0 1 1 0 0 0 0 0 0 0 –
1 RDA 0 1 0 1 0 0 0 1 0 0 0 00000000
0
2 D 1 0 0 0 0 0 0 0 0 0 0 –
3 Repeat cycle 2 until nRRD - 1
nRRD ACT 0 0 1 1 0 1 0 0 0 F 0 –
nRRD + 1 RDA 0 1 0 1 0 1 0 1 0 F 0 00110011
1
nRRD + 2 D 1 0 0 0 0 1 0 0 0 F 0 –
nRRD + 3 Repeat cycle nRRD + 2 until 2 × nRRD - 1
2 2 × nRRD Repeat sub-loop 0, use BA[2:0] = 2
3 3 × nRRD Repeat sub-loop 1, use BA[2:0] = 3
4 × nRRD D 1 0 0 0 0 3 0 0 0 F 0 –
4
4 × nRRD + 1 Repeat cycle 4 × nRRD until nFAW - 1, if needed
5 nFAW Repeat sub-loop 0, use BA[2:0] = 4
6 nFAW + nRRD Repeat sub-loop 1, use BA[2:0] = 5
Static HIGH
7 nFAW + 2 × nRRD Repeat sub-loop 0, use BA[2:0] = 6

Toggling
8 nFAW + 3 × nRRD Repeat sub-loop 1, use BA[2:0] = 7

nFAW + 4 × nRRD D 1 0 0 0 0 7 0 0 0 F 0 –
9
nFAW + 4 × nRRD + 1 Repeat cycle nFAW + 4 × nRRD until 2 × nFAW - 1, if needed
2 × nFAW ACT 0 0 1 1 0 0 0 0 0 F 0 –
2 × nFAW + 1 RDA 0 1 0 1 0 0 0 1 0 F 0 00110011
10
2 × nFAW + 2 D 1 0 0 0 0 0 0 0 0 F 0 –
2 × nFAW + 3 Repeat cycle 2 × nFAW + 2 until 2 × nFAW + nRRD - 1
2 × nFAW + nRRD ACT 0 0 1 1 0 1 0 0 0 0 0 –
2 × nFAW + nRRD + 1 RDA 0 1 0 1 0 1 0 1 0 0 0 00000000
11
2 × nFAW + nRRD + 2 D 1 0 0 0 0 1 0 0 0 0 0 –
2 × nFAW + nRRD + 3 Repeat cycle 2 × nFAW + nRRD + 2 until 2 × nFAW + 2 × nRRD - 1
12 2 × nFAW + 2 × nRRD Repeat sub-loop 10, use BA[2:0] = 2
2 × nFAW + 4 × nRRD D 1 0 0 0 0 3 0 0 0 0 0 –
14
2 × nFAW + 4 × nRRD + 1 Repeat cycle 2 × nFAW + 4 × nRRD until 3 × nFAW - 1, if needed
15 3 × nFAW Repeat sub-loop 10, use BA[2:0] = 4
Table 19: IDD7 Measurement Loop (Continued)
Command
Sub-Loop
A[15:11]
Number
CK, CK#
BA[2:0]
A[9:7]
A[6:3]
A[2:0]
Data3
A[10]
RAS#
CAS#
WE#
ODT
CKE
CS#
Cycle
16 3 × nFAW + nRRD Repeat sub-loop 11, use BA[2:0] = 5
Static HIGH

Toggling

3 × nFAW + 4 × nRRD D 1 0 0 0 0 7 0 0 0 0 0 –
19
3 × nFAW + 4 × nRRD + 1 Repeat cycle 3 × nFAW + 4 × nRRD until 4 × nFAW - 1, if needed
Notes: 1. DQ, DQS, DQS# are midlevel unless driven as required by the RD command.
2. DM is LOW.
4. AL = CL-1.
Electrical Characteristics – IDD Specifications

IDD values are for full operating range of voltage and temperature unless otherwise no-
ted.
Table 20: IDD Maximum Limits – Die Rev K
Speed Bin
Widt
IDD h DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866 DDR3-2133 Unit Notes
IDD0 x4, x8 39 41 42 43 46
mA 1, 2
x16 46 48 49 51 55
IDD1 x4 46 50 52 55 57
x8 50 54 56 58 60 mA 1, 2
x16 62 67 69 72 75
IDD2P0
All 12 12 12 12 12 mA 1, 2
(Slow)
IDD2P1 (Fast) All 15 15 15 15 15 mA 1, 2
IDD2Q All 22 22 22 22 22 mA 1, 2
IDD2N All 23 23 23 23 23 mA 1, 2
IDD2NT x4,x8 29 32 34 36 40
mA 1, 2
x16 33 36 37 39 43
IDD3P All 22 22 22 22 22 mA 1, 2
IDD3N x4,x8 31 33 35 37 40 mA
1, 2
x16 33 36 37 39 43 mA
IDD4R x4 70 84 96 106 120
x8 74 88 100 110 125 mA 1, 2
x16 95 115 135 155 180
IDD4W x4 75 87 99 110 122
x8 79 91 103 114 126 mA 1, 2
x16 107 127 146 164 184
IDD5B All 179 181 182 184 190 mA 1, 2
IDD6 All 12 12 12 12 12 mA 1, 2, 3
IDD6ET All 15 15 15 15 15 mA 2, 4
IDD7 x4, x8 128 157 163 171 190
mA 1, 2
x16 159 179 202 226 248
IDD8 All IDD2P0 + 2mA IDD2P0 + 2mA IDD2P0 + 2mA IDD2P0 + 2mA IDD2P0 + 2mA mA 1, 2
Notes: 1. TC = 85°C; SRT and ASR are disabled.

2. Enabling ASR could increase IDDx by up to an additional 2mA.
3. Restricted to TC MAX = 85°C.
4. TC = 85°C; ASR and ODT are disabled; SRT is enabled.
5. The IDD values must be derated (increased) on IT-option devices when operated outside
the range 0°C ≤ TC ≤ +85°C:
5a. When TC < 0°C: IDD2P0, IDD2P1 and IDD3P must be derated by 4%; IDD4R and IDD4W must
be derated by 2%; and IDD6, IDD6ET and IDD7 must be derated by 7%.
5b. When TC > 85°C: IDD0, IDD1, IDD2N, IDD2NT, IDD2Q, IDD3N, IDD3P, IDD4R, IDD4W, and IDD5B
must be derated by 2%; and IDD2Px must be derated by 30%.
Table 21: IDD Maximum Limits – Die Rev. N
Speed Bin
IDD Width DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866 DDR3-2133 Units Notes
x4, x8 37 39 41 43 45
IDD0 mA 1, 2
x16 42 44 46 48 50
x4 46 50 52 55 57
IDD1 x8 49 52 55 58 60 mA 1, 2
x16 61 65 68 72 74
IDD2P0 8 8 8 8 8
All mA 1, 2
(Slow)
IDD2P1 9 9 9 9 9
All mA 1, 2
(Fast)
IDD2Q All 22 23 24 25 26 mA 1, 2
IDD2N All 23 24 25 26 27 mA 1, 2
x4, x8 25 26 27 29 31
IDD2NT mA 1, 2
x16 26 27 28 30 32
IDD3P All 28 28 28 29 29 mA 1, 2
x4,x8 33 35 37 39 41
IDD3N mA 1, 2
x16 37 39 41 43 45
x4 73 86 96 108 118
IDD4R x8 77 88 100 112 122 mA 1, 2
x16 105 122 138 155 168
x4 82 93 105 116 126
IDD4W x8 86 97 109 120 130 mA 1, 2
x16 122 137 155 172 185
IDD5B All 134 136 138 140 142 mA 1, 2
IDD6 All 10 10 10 10 10 mA 1, 2 , 3
IDD6ET All 13 13 13 13 13 mA 2, 4
x4, 8 123 137 142 156 164
IDD7 mA 1, 2
x16 133 148 165 179 189
IDD8 All IDD2P0 + 2mA IDD2P0 + 2mA IDD2P0 + 2mA IDD2P0 + 2mA IDD2P0 + 2mA mA 1, 2
Notes: 1. TC = 85°C; SRT and ASR are disabled.

2. Enabling ASR could increase IDDx by up to an additional 2mA.
3. Restricted to TC (MAX) = 85°C.
4. TC = 85°C; ASR and ODT are disabled; SRT is enabled.
5. The IDD values must be derated (increased) on IT-option devices when operated outside
of the range 0°C ≤ TC ≤ +85°C:
5a. When TC < 0°C: IDD2P0, IDD2P1 and IDD3P must be derated by 4%; IDD4R and IDD4W must
be derated by 2%; and IDD6, IDD6ET and IDD7 must be derated by 7%.
5b. When TC > 85°C: IDD0, IDD1, IDD2N, IDD2NT, IDD2Q, IDD3N, IDD3P, IDD4R, IDD4W, and IDD5B
must be derated by 2%; IDD2Px must be derated by 30%.
Electrical Specifications – DC and AC

DC Operating Conditions
Table 22: DC Electrical Characteristics and Operating Conditions

All voltages are referenced to VSS
Parameter/Condition Symbol Min Nom Max Unit Notes
Supply voltage VDD 1.425 1.5 1.575 V 1, 2
I/O supply voltage VDDQ 1.425 1.5 1.575 V 1, 2
Input leakage current II –2 – 2 μA
Any input 0V ≤ VIN ≤ VDD, VREF pin 0V ≤ VIN ≤ 1.1V
(All other pins not under test = 0V)
VREF supply leakage current IVREF –1 – 1 μA 3, 4
VREFDQ = VDD/2 or VREFCA = VDD/2
(All other pins not under test = 0V)
Notes: 1. VDD and VDDQ must track one another. VDDQ must be ≤ VDD. VSS = VSSQ.
2. VDD and VDDQ may include AC noise of ±50mV (250 kHz to 20 MHz) in addition to the
DC (0 Hz to 250 kHz) specifications. VDD and VDDQ must be at same level for valid AC
timing parameters.
3. VREF (see Table 23).
4. The minimum limit requirement is for testing purposes. The leakage current on the VREF
pin should be minimal.
Input Operating Conditions
Table 23: DC Electrical Characteristics and Input Conditions

VIN low; DC/commands/address busses VIL VSS n/a See Table 24 V
VIN high; DC/commands/address busses VIH See Table 24 n/a VDD V
Input reference voltage command/address bus VREFCA(DC) 0.49 × VDD 0.5 × VDD 0.51 × VDD V 1, 2
I/O reference voltage DQ bus VREFDQ(DC) 0.49 × VDD 0.5 × VDD 0.51 × VDD V 2, 3
I/O reference voltage DQ bus in SELF REFRESH VREFDQ(SR) VSS 0.5 × VDD VDD V 4
Command/address termination voltage VTT – 0.5 × VDDQ – V 5
(system level, not direct DRAM input)
Notes: 1. VREFCA(DC) is expected to be approximately 0.5 × VDD and to track variations in the DC
level. Externally generated peak noise (noncommon mode) on VREFCA may not exceed
±1% × VDD around the VREFCA(DC) value. Peak-to-peak AC noise on VREFCA should not ex-
ceed ±2% of VREFCA(DC).
2. DC values are determined to be less than 20 MHz in frequency. DRAM must meet specifi-
cations if the DRAM induces additional AC noise greater than 20 MHz in frequency.
3. VREFDQ(DC) is expected to be approximately 0.5 × VDD and to track variations in the DC
level. Externally generated peak noise (noncommon mode) on VREFDQ may not exceed
±1% × VDD around the VREFDQ(DC) value. Peak-to-peak AC noise on VREFDQ should not ex-
ceed ±2% of VREFDQ(DC).
4. VREFDQ(DC) may transition to VREFDQ(SR) and back to VREFDQ(DC) when in SELF REFRESH,
within restrictions outlined in the SELF REFRESH section.
5. VTT is not applied directly to the device. VTT is a system supply for signal termination re-
sistors. Minimum and maximum values are system-dependent.
Table 24: Input Switching Conditions
DDR3-800 DDR3-1333 DDR3-1866

Parameter/Condition Symbol DDR3-1066 DDR3-1600 DDR3-2133 Unit
Command and Address
Input high AC voltage: Logic 1 @ 175mV VIH(AC175)min 175 175 – mV
Input high AC voltage: Logic 1 @ 150mV VIH(AC150)min 150 150 – mV
Input high AC voltage: Logic 1 @ 135 mV VIH(AC135)min – – 135 mV
Input high AC voltage: Logic 1 @ 125 mV VIH(AC125)min – – 125 mV
Input high DC voltage: Logic 1 @ 100 mV VIH(DC100)min 100 100 100 mV
Input low DC voltage: Logic 0 @ –100mV VIL(DC100)max –100 –100 –100 mV
Input low AC voltage: Logic 0 @ –125mV VIL(AC125)max – – –125 mV
Input low AC voltage: Logic 0 @ –135mV VIL(AC135)max – – –135 mV
Input low AC voltage: Logic 0 @ –150mV VIL(AC150)max –150 –150 – mV
Input low AC voltage: Logic 0 @ –175mV VIL(AC175)max –175 –175 – mV
DQ and DM
Input high AC voltage: Logic 1 VIH(AC175)min 175 – – mV
Input high AC voltage: Logic 1 VIH(AC150)min 150 150 – mV
Input high AC voltage: Logic 1 VIH(AC135)min – – 135 mV
Input high DC voltage: Logic 1 VIH(DC100)min 100 100 100 mV
Input low DC voltage: Logic 0 VIL(DC100)max –100 –100 –100 mV
Input low AC voltage: Logic 0 VIL(AC135)max – – –135 mV
Input low AC voltage: Logic 0 VIL(AC150)max –150 –150 – mV
Input low AC voltage: Logic 0 VIL(AC175)max –175 – – mV
Notes: 1. All voltages are referenced to VREF. VREF is VREFCA for control, command, and address. All
slew rates and setup/hold times are specified at the DRAM ball. VREF is VREFDQ for DQ
and DM inputs.
2. Input setup timing parameters (tIS and tDS) are referenced at VIL(AC)/VIH(AC), not VREF(DC).
3. Input hold timing parameters (tIH and tDH) are referenced at VIL(DC)/VIH(DC), not VREF(DC).
4. Single-ended input slew rate = 1 V/ns; maximum input voltage swing under test is
900mV (peak-to-peak).
5. When two VIH(AC) values (and two corresponding VIL(AC) values) are listed for a specific
speed bin, the user may choose either value for the input AC level. Whichever value is
used, the associated setup time for that AC level must also be used. Additionally, one
VIH(AC) value may be used for address/command inputs and the other VIH(AC) value may
be used for data inputs.
For example, for DDR3-800, two input AC levels are defined: VIH(AC175),min and
VIH(AC150),min (corresponding VIL(AC175),min and VIL(AC150),min). For DDR3-800, the address/
command inputs must use either VIH(AC175),min with tIS(AC175) of 200ps or VIH(AC150),min
with tIS(AC150) of 350ps; independently, the data inputs must use either VIH(AC175),min
with tDS(AC175) of 75ps or VIH(AC150),min with tDS(AC150) of 125ps.
Table 25: Differential Input Operating Conditions (CK, CK# and DQS, DQS#)
Parameter/Condition Symbol Min Max Unit Notes

Differential input voltage logic high - slew VIH,diff 200 n/a mV 4
Differential input voltage logic low - slew VIL,diff n/a –200 mV 4
Differential input voltage logic high VIH,diff(AC) 2 × (VIH(AC) - VREF) VDD/VDDQ mV 5
Differential input voltage logic low VIL,diff(AC) VSS/VSSQ 2 × (VIL(AC)-VREF) mV 6
Differential input crossing voltage relative VIX VREF(DC) - 150 VREF(DC) + 150 mV 4, 7
to VDD/2 for DQS, DQS#; CK, CK#
Differential input crossing voltage relative VIX (175) VREF(DC) - 175 VREF(DC) + 175 mV 4, 7, 8
to VDD/2 for CK, CK#
Single-ended high level for strobes VSEH VDDQ/2 + 175 VDDQ mV 5
Single-ended high level for CK, CK# VDD/2 + 175 VDD mV 5
Single-ended low level for strobes VSEL VSSQ VDDQ/2 - 175 mV 6
Single-ended low level for CK, CK# VSS VDD/2 - 175 mV 6
Notes: 1. Clock is referenced to VDD and VSS. Data strobe is referenced to VDDQ and VSSQ.
2. Reference is VREFCA(DC) for clock and VREFDQ(DC) for strobe.
3. Differential input slew rate = 2 V/ns
4. Defines slew rate reference points, relative to input crossing voltages.
5. Minimum DC limit is relative to single-ended signals; overshoot specifications are appli-
cable.
6. Maximum DC limit is relative to single-ended signals; undershoot specifications are ap-
plicable.
7. The typical value of VIX(AC) is expected to be about 0.5 × VDD of the transmitting device,
and VIX(AC) is expected to track variations in VDD. VIX(AC) indicates the voltage at which
differential input signals must cross.
8. The VIX extended range (±175mV) is allowed only for the clock; this VIX extended range
is only allowed when the following conditions are met: The single-ended input signals
are monotonic, have the single-ended swing VSEL, VSEH of at least VDD/2 ±250mV, and
the differential slew rate of CK, CK# is greater than 3 V/ns.
9. VIX must provide 25mV (single-ended) of the voltages separation.
Figure 13: Input Signal

VIL and VIH levels with ringback
1.90V VDDQ + 0.4V narrow
pulse width
1.50V VDDQ
Minimum VIL and VIH levels
VIH(AC)
0.925V 0.925V VIH(AC)
VIH(DC)
0.850V 0.850V VIH(DC)
0.780V 0.780V
VREF + AC noise
0.765V 0.765V VREF + DC error
0.750V 0.750V
0.735V 0.735V VREF - DC error
VREF - AC noise
0.720V 0.720V
0.650V 0.650V VIL(DC)

VIL(DC)
0.575V 0.575V VIL(AC)

VIL(AC)
0.0V VSS
–0.40V VSS - 0.4V narrow

pulse width
Note: 1. Numbers in diagrams reflect nominal values.
AC Overshoot/Undershoot Specification
Table 26: Control and Address Pins
Parameter DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866 DDR3-2133

Maximum peak amplitude al- 0.4V 0.4V 0.4V 0.4V 0.4V 0.4V
lowed for overshoot area
(see Figure 14)
lowed for undershoot area
(see Figure 15)
Maximum overshoot area above 0.67 Vns 0.5 Vns 0.4 Vns 0.33 Vns 0.28 Vns 0.25 Vns
VDD (see Figure 14)
Maximum undershoot area be- 0.67 Vns 0.5 Vns 0.4 Vns 0.33 Vns 0.28 Vns 0.25 Vns
low VSS (see Figure 15)
Table 27: Clock, Data, Strobe, and Mask Pins
Parameter DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866 DDR3-2133

lowed for overshoot area
(see Figure 14)
lowed for undershoot area
(see Figure 15)
Maximum overshoot area above 0.25 Vns 0.19 Vns 0.15 Vns 0.13 Vns 0.11 Vns 0.10 Vns
VDD/VDDQ (see Figure 14)
Maximum undershoot area be- 0.25 Vns 0.19 Vns 0.15 Vns 0.13 Vns 0.11 Vns 0.10 Vns
low VSS/VSSQ (see Figure 15)
Figure 14: Overshoot

Maximum amplitude
Volts (V) Overshoot area
VDD/VDDQ
Time (ns)
Figure 15: Undershoot

VSS/VSSQ
Volts (V)
Undershoot area
Maximum amplitude
Time (ns)
Figure 16: VIX for Differential Signals

VDD, VDDQ VDD, VDDQ
CK#, DQS# CK#, DQS#
X VIX
VIX
VDD/2, VDDQ/2 X X VDD/2, VDDQ/2
VIX
X VIX
CK, DQS CK, DQS
VSS, VSSQ VSS, VSSQ
Figure 17: Single-Ended Requirements for Differential Signals

VDD or VDDQ
VSEH,min
VDD/2 or VDDQ/2
VSEH
CK or DQS
VSEL,max
VSEL
VSS or VSSQ
Figure 18: Definition of Differential AC-Swing and tDVAC

tDVAC
VIH,diff(AC)min
VIH,diff,min
CK - CK#
DQS - DQS#
0.0
VIL,diff,max
VIL,diff(AC)max
Half cycle tDVAC
Table 28: Allowed Time Before Ringback (tDVAC) for CK - CK# and DQS -
DQS#
tDVAC (ps) at |VIH,diff(AC) to VIL,diff(AC)|
Slew Rate (V/ns)
350mV 300mV
>4.0 75 175
4.0 57 170
3.0 50 167
2.0 38 163
1.9 34 162
1.6 29 161
1.4 22 159
1.2 13 155
1.0 0 150
<1.0 0 150
Note: 1. Below VIL(AC)
Slew Rate Definitions for Single-Ended Input Signals

Setup (tIS and tDS) nominal slew rate for a rising signal is defined as the slew rate be-
tween the last crossing of V REF and the first crossing of V IH(AC)min. Setup (tIS and tDS)
nominal slew rate for a falling signal is defined as the slew rate between the last crossing
of V REF and the first crossing of V IL(AC)max.
Hold (tIH and tDH) nominal slew rate for a rising signal is defined as the slew rate be-
tween the last crossing of V IL(DC)max and the first crossing of V REF. Hold (tIH and tDH)
nominal slew rate for a falling signal is defined as the slew rate between the last crossing
of V IH(DC)min and the first crossing of V REF (see Figure 19 (page 55)).
Table 29: Single-Ended Input Slew Rate Definition
Input Slew Rates

(Linear Signals) Measured
Input Edge From To Calculation
Setup Rising VREF VIH(AC)min VIH(AC),min - VREF
ΔTRSse
Falling VREF VIL(AC)max VREF - VIL(AC),max

ΔTFSse
Hold Rising VIL(DC)max VREF VREF - VIL(DC),max

ΔTFHse
Falling VIH(DC)min VREF VIH(DC),min - VREF

ΔTRSHse
Figure 19: Nominal Slew Rate Definition for Single-Ended Input Signals
ΔTRSse
Setup Single-ended input voltage (DQ, CMD, ADDR) VIH(AC)min
VIH(DC)min
VREFDQ or
VREFCA
VIL(DC)max
VIL(AC)max
ΔTFSse
ΔTRHse
Hold
VIH(AC)min
Single-ended input voltage (DQ, CMD, ADDR)
VIH(DC)min
VREFDQ or
VREFCA
VIL(DC)max
VIL(AC)max
ΔTFHse
Slew Rate Definitions for Differential Input Signals

Input slew rate for differential signals (CK, CK# and DQS, DQS#) are defined and meas-
ured, as shown in Table 30 and Figure 20. The nominal slew rate for a rising signal is
defined as the slew rate between V IL,diff,max and V IH,diff,min. The nominal slew rate for a
falling signal is defined as the slew rate between V IH,diff,min and V IL,diff,max.
Table 30: Differential Input Slew Rate Definition
Differential Input
Slew Rates
(Linear Signals) Measured
Input Edge From To Calculation
CK and Rising VIL,diff,max VIH,diff,min VIH,diff,min - VIL,diff,max
DQS ΔTRdiff
reference
Falling VIH,diff,min VIL,diff,max VIH,diff,min - VIL,diff,max
ΔTFdiff
Figure 20: Nominal Differential Input Slew Rate Definition for DQS, DQS# and CK, CK#
ΔTRdiff
Differential input voltage (DQS, DQS#; CK, CK#)
VIH,diff,min
VIL,diff,max
ΔTFdiff
ODT Characteristics
ODT Characteristics
The ODT effective resistance RTT is defined by MR1[9, 6, and 2]. ODT is applied to the
DQ, DM, DQS, DQS#, and TDQS, TDQS# balls (x8 devices only). The ODT target values
and a functional representation are listed in Table 31 and Table 32 (page 58). The indi-
vidual pull-up and pull-down resistors (RTT(PU) and RTT(PD)) are defined as follows:
• RTT(PU) = (VDDQ - VOUT)/|IOUT|, under the condition that RTT(PD) is turned off
• RTT(PD) = (VOUT)/|IOUT|, under the condition that RTT(PU) is turned off
Figure 21: ODT Levels and I-V Characteristics

Chip in termination mode
ODT
VDDQ
IPU
IOUT = IPD - IPU
To RTT(PU)
other
circuitry DQ
such as IOUT
RCV, . . . RTT(PD)
VOUT
IPD
VSSQ
Table 31: On-Die Termination DC Electrical Characteristics

RTT effective impedance RTT(EFF) See Table 32 (page 58) 1, 2
Deviation of VM with respect to ΔVM –5 5 % 1, 2, 3
VDDQ/2
Notes: 1. Tolerance limits are applicable after proper ZQ calibration has been performed at a
stable temperature and voltage (VDDQ = VDD, VSSQ = VSS). Refer to ODT Sensitivity (page
59) if either the temperature or voltage changes after calibration.
2. Measurement definition for RTT: Apply VIH(AC) to pin under test and measure current
I[VIH(AC)], then apply VIL(AC) to pin under test and measure current I[VIL(AC)]:
VIH(AC) - VIL(AC)
RTT =
I(VIH(AC)) - I(VIL(AC))
3. Measure voltage (VM) at the tested pin with no load:

2 × VM
ΔVM = – 1 × 100
VDDQ
4. For IT and AT devices, the minimum values are derated by 6% when the device operates
between –40°C and 0°C (TC).
ODT Characteristics
ODT Resistors
Table 32 (page 58) provides an overview of the ODT DC electrical characteristics. The
values provided are not specification requirements; however, they can be used as design
guidelines to indicate what RTT is targeted to provide:
• RTT 120Ω is made up of RTT120(PD240) and RTT120(PU240)
Table 32: RTT Effective Impedances
MR1
[9, 6, 2] RTT Resistor VOUT Min Nom Max Unit
0, 1, 0 Ω RTT120(PD240) 0.2 × VDDQ 0.6 1.0 1.1 RZQ/1
0.5 × VDDQ 0.9 1.0 1.1 RZQ/1
0.8 × VDDQ 0.9 1.0 1.4 RZQ/1
RTT120(PU240) 0.2 × VDDQ 0.9 1.0 1.4 RZQ/1
0.5 × VDDQ 0.9 1.0 1.1 RZQ/1
0.8 × VDDQ 0.6 1.0 1.1 RZQ/1
Ω VIL(AC) to VIH(AC) 0.9 1.0 1.6 RZQ/2
0, 0, 1 Ω RTT60(PD120) 0.2 × VDDQ 0.6 1.0 1.1 RZQ/2
0.5 × VDDQ 0.9 1.0 1.1 RZQ/2
0.8 × VDDQ 0.9 1.0 1.4 RZQ/2
RTT60(PU120) 0.2 × VDDQ 0.9 1.0 1.4 RZQ/2
0.5 × VDDQ 0.9 1.0 1.1 RZQ/2
0.8 × VDDQ 0.6 1.0 1.1 RZQ/2
Ω VIL(AC) to VIH(AC) 0.9 1.0 1.6 RZQ/4
0, 1, 1 Ω RTT40(PD80) 0.2 × VDDQ 0.6 1.0 1.1 RZQ/3
0.5 × VDDQ 0.9 1.0 1.1 RZQ/3
0.8 × VDDQ 0.9 1.0 1.4 RZQ/3
RTT40(PU80) 0.2 × VDDQ 0.9 1.0 1.4 RZQ/3
0.5 × VDDQ 0.9 1.0 1.1 RZQ/3
0.8 × VDDQ 0.6 1.0 1.1 RZQ/3
Ω VIL(AC) to VIH(AC) 0.9 1.0 1.6 RZQ/6
1, 0, 1 Ω RTT30(PD60) 0.2 × VDDQ 0.6 1.0 1.1 RZQ/4
0.5 × VDDQ 0.9 1.0 1.1 RZQ/4
0.8 × VDDQ 0.9 1.0 1.4 RZQ/4
RTT30(PU60) 0.2 × VDDQ 0.9 1.0 1.4 RZQ/4
0.5 × VDDQ 0.9 1.0 1.1 RZQ/4
0.8 × VDDQ 0.6 1.0 1.1 RZQ/4
Ω VIL(AC) to VIH(AC) 0.9 1.0 1.6 RZQ/8
ODT Characteristics
Table 32: RTT Effective Impedances (Continued)
MR1
[9, 6, 2] RTT Resistor VOUT Min Nom Max Unit
1, 0, 0 Ω RTT20(PD40) 0.2 × VDDQ 0.6 1.0 1.1 RZQ/6
0.5 × VDDQ 0.9 1.0 1.1 RZQ/6
0.8 × VDDQ 0.9 1.0 1.4 RZQ/6
RTT20(PU40) 0.2 × VDDQ 0.9 1.0 1.4 RZQ/6
0.5 × VDDQ 0.9 1.0 1.1 RZQ/6
0.8 × VDDQ 0.6 1.0 1.1 RZQ/6
Ω VIL(AC) to VIH(AC) 0.9 1.0 1.6 RZQ/12
Note: 1. Values assume an RZQ of 240Ω 
ODT Sensitivity
If either the temperature or voltage changes after I/O calibration, then the tolerance
limits listed in Table 31 (page 57) and Table 32 can be expected to widen according to
Table 33 and Table 34 (page 59).
Table 33: ODT Sensitivity Definition
Symbol Min Max Unit

RTT 0.9 - dRTTdT × |DT| - dRTTdV × |DV| 1.6 + dRTTdT × |DT| + dRTTdV × |DV| RZQ/(2, 4, 6, 8, 12)
Note: 1. ΔT = T - T(@ calibration), ΔV = VDDQ - VDDQ(@ calibration) and VDD = VDDQ.
Table 34: ODT Temperature and Voltage Sensitivity
Change Min Max Unit

dRTTdT 0 1.5 %/°C
dRTTdV 0 0.15 %/mV
Note: 1. ΔT = T - T(@ calibration), ΔV = VDDQ - VDDQ(@ calibration) and VDD = VDDQ.
ODT Timing Definitions

ODT loading differs from that used in AC timing measurements. The reference load for
ODT timings is shown in Figure 22. Two parameters define when ODT turns on or off
synchronously, two define when ODT turns on or off asynchronously, and another de-
fines when ODT turns on or off dynamically. Table 35 outlines and provides definition
and measurement references settings for each parameter (see Table 36 (page 60)).
ODT turn-on time begins when the output leaves High-Z and ODT resistance begins to
turn on. ODT turn-off time begins when the output leaves Low-Z and ODT resistance
begins to turn off.
ODT Characteristics
Figure 22: ODT Timing Reference Load
VDDQ/2
DUT VREF
DQ, DM RTT = 25Ω

CK, CK# DQS, DQS# VTT = VSSQ
TDQS, TDQS#
Timing reference point
ZQ
RZQ = 240Ω
VSSQ
Table 35: ODT Timing Definitions
Symbol Begin Point Definition End Point Definition Figure

tAON Rising edge of CK - CK# defined by the end Extrapolated point at VSSQ Figure 23 (page 61)
point of ODTLon
tAOF Rising edge of CK - CK# defined by the end Extrapolated point at VRTT,nom Figure 23 (page 61)
point of ODTLoff
tAONPD Rising edge of CK - CK# with ODT first being Extrapolated point at VSSQ Figure 24 (page 61)
registered HIGH
tAOFPD Rising edge of CK - CK# with ODT first being Extrapolated point at VRTT,nom Figure 24 (page 61)
registered LOW
tADC Rising edge of CK - CK# defined by the end Extrapolated points at VRTT(WR) and Figure 25 (page 62)
point of ODTLcnw, ODTLcwn4, or ODTLcwn8 VRTT,nom
Table 36: Reference Settings for ODT Timing Measurements
Measured Parameter RTT,nom Setting RTT(WR) Setting VSW1 VSW2

tAON RZQ/4 (60Ω n/a 50mV 100mV
RZQ/12 (20Ω n/a 100mV 200mV
tAOF RZQ/4 (60Ω n/a 50mV 100mV
RZQ/12 (20Ω n/a 100mV 200mV
tAONPD RZQ/4 (60Ω n/a 50mV 100mV
RZQ/12 (20Ω n/a 100mV 200mV
tAOFPD RZQ/4 (60Ω n/a 50mV 100mV
RZQ/12 (20Ω n/a 100mV 200mV
tADC RZQ/12 (20Ω RZQ/2 (120Ω 200mV 300mV
Note: 1. Assume an RZQ of 240Ω (±1%) and that proper ZQ calibration has been performed at a
stable temperature and voltage (VDDQ = VDD, VSSQ = VSS).
ODT Characteristics
Figure 23: tAON and tAOF Definitions
tAON tAOF
Begin point: Rising edge of CK - CK# Begin point: Rising edge of CK - CK#
defined by the end point of ODTLon defined by the end point of ODTLoff
CK CK
VDDQ/2
CK# CK#
tAON tAOF
End point: Extrapolated point at VRTT,nom

TSW2 VRTT,nom
TSW1
DQ, DM TSW1
TSW1
DQS, DQS# VSW2 VSW2
TDQS, TDQS# VSSQ VSW1 VSW1
VSSQ
End point: Extrapolated point at VSSQ
Figure 24: tAONPD and tAOFPD Definitions

tAONPD tAOFPD
Begin point: Rising edge of CK - CK# Begin point: Rising edge of CK - CK#
with ODT first registered high with ODT first registered low
CK CK
VDDQ/2
CK# CK#
tAONPD tAOFPD
End point: Extrapolated point at VRTT,nom
TSW2 VRTT,nom
TSW2
TSW1
DQ, DM TSW1
DQS, DQS# VSW2 VSW2
TDQS, TDQS#
VSSQ VSW1 VSW1
VSSQ
End point: Extrapolated point at VSSQ
ODT Characteristics
Figure 25: tADC Definition
Begin point: Rising edge of CK - CK# Begin point: Rising edge of CK - CK# defined by
defined by the end point of ODTLcnw the end point of ODTLcwn4 or ODTLcwn8
CK
VDDQ/2
CK#
tADC tADC
VRTT,nom VRTT,nom
TSW21
DQ, DM End point: TSW11 TSW22
DQS, DQS# Extrapolated VSW2
TDQS, TDQS# point at VRTT,nom
VSW1 TSW12
VRTT(WR) End point: Extrapolated point at VRTT(WR)
VSSQ
Output Driver Impedance

The output driver impedance is selected by MR1[5,1] during initialization. The selected
value is able to maintain the tight tolerances specified if proper ZQ calibration is per-
formed. Output specifications refer to the default output driver unless specifically sta-
ted otherwise. A functional representation of the output buffer is shown below. The out-
put driver impedance RON is defined by the value of the external reference resistor RZQ
as follows:
• RON,x = RZQ/y (with RZQ = 240Ω ±1%; x = 34Ω or 40Ω with y = 7 or 6, respectively)
The individual pull-up and pull-down resistors RON(PU) and RON(PD) are defined as fol-
lows:
• RON(PU) = (VDDQ - VOUT)/|IOUT|, when RON(PD) is turned off
• RON(PD) = (VOUT)/|IOUT|, when RON(PU) is turned off
Figure 26: Output Driver

Chip in drive mode
Output driver
VDDQ
IPU
To RON(PU)
other
circuitry DQ
such as IOUT
RCV, . . . RON(PD)
VOUT
IPD
VSSQ
34 Ohm Output Driver Impedance

The 34Ω driver (MR1[5, 1] = 01) is the default driver. Unless otherwise stated, all timings
and specifications listed herein apply to the 34Ω driver only. Its impedance RON is de-
fined by the value of the external reference resistor RZQ as follows: RON34 = RZQ/7 (with
nominal RZQ = 240Ω ±1%) and is actually 34.3Ω ±1%.
Table 37: 34 Ohm Driver Impedance Characteristics
MR1[5,1] RON Resistor VOUT Min Nom Max Unit Notes

0,1 Ω RON34(PD) 0.2/VDDQ 0.6 1.0 1.1 RZQ/7
0.5/VDDQ 0.9 1.0 1.1 RZQ/7
0.8/VDDQ 0.9 1.0 1.4 RZQ/7
RON34(PU) 0.2/VDDQ 0.9 1.0 1.4 RZQ/7
0.5/VDDQ 0.9 1.0 1.1 RZQ/7
0.8/VDDQ 0.6 1.0 1.1 RZQ/7
Pull-up/pull-down mismatch (MMPUPD) 0.5/VDDQ –10% n/a 10 % 2
Notes: 1. Tolerance limits assume RZQ of 240Ω ±1% and are applicable after proper ZQ calibra-
tion has been performed at a stable temperature and voltage: VDDQ = VDD; VSSQ = VSS).
Refer to 34 Ohm Output Driver Sensitivity (page 66) if either the temperature or the
voltage changes after calibration.
2. Measurement definition for mismatch between pull-up and pull-down (MMPUPD). Meas-
ure both RON(PU) and RON(PD) at 0.5 × VDDQ:
RON(PU) - RON(PD)
MMPUPD = × 100
RON,nom
3. For IT and AT (1Gb only) devices, the minimum values are derated by 6% when the de-
vice operates between –40°C and 0°C (TC).
34 Ohm Driver
The 34Ω driver’s current range has been calculated and summarized in Table 39 (page
65) VDD = 1.5V, Table 40 (page 65) for V DD = 1.57V, and Table 41 (page 66) for V DD =
1.42V. The individual pull-up and pull-down resistors R ON34(PD) and RON34(PU) are de-
fined as follows:
• RON34(PD) = (VOUT)/|IOUT|; RON34(PU) is turned off
• RON34(PU) = (VDDQ - VOUT)/|IOUT|; RON34(PD) is turned off
Table 38: 34 Ohm Driver Pull-Up and Pull-Down Impedance Calculations
RON Min Nom Max Unit

RZQ = 240Ω  237.6 240 242.4 Ω
RZQ/7 = (240Ω  33.9 34.3 34.6 Ω
MR1[5,1] RON Resistor VOUT Min Nom Max Unit
0, 1 Ω RON34(PD) 0.2 × VDDQ 20.4 34.3 38.1 Ω
0.5 × VDDQ 30.5 34.3 38.1 Ω
0.8 × VDDQ 30.5 34.3 48.5 Ω
RON34(PU) 0.2 × VDDQ 30.5 34.3 48.5 Ω
0.5 × VDDQ 30.5 34.3 38.1 Ω
0.8 × VDDQ 20.4 34.3 38.1 Ω
Table 39: 34 Ohm Driver IOH/IOL Characteristics: VDD = VDDQ = 1.5V
MR1[5,1] RON Resistor VOUT Max Nom Min Unit

0, 1 Ω RON34(PD) IOL @ 0.2 × VDDQ 14.7 8.8 7.9 mA
IOL @ 0.5 × VDDQ 24.6 21.9 19.7 mA
IOL @ 0.8 × VDDQ 39.3 35.0 24.8 mA
RON34(PU) IOH @ 0.2 × VDDQ 39.3 35.0 24.8 mA
IOH @ 0.5 × VDDQ 24.6 21.9 19.7 mA
IOH @ 0.8 × VDDQ 14.7 8.8 7.9 mA

IOL @ 0.5 × VDDQ 25.8 23 20.7 mA
IOL @ 0.8 × VDDQ 41.2 36.8 26 mA
RON34(PU) IOH @ 0.2 × VDDQ 41.2 36.8 26 mA
IOH @ 0.5 × VDDQ 25.8 23 20.7 mA
IOH @ 0.8 × VDDQ 15.5 9.2 8.3 mA

IOL @ 0.5 × VDDQ 23.3 20.8 18.7 mA
IOL @ 0.8 × VDDQ 37.3 33.3 23.5 mA
RON34(PU) IOH @ 0.2 × VDDQ 37.3 33.3 23.5 mA
IOH @ 0.5 × VDDQ 23.3 20.8 18.7 mA
IOH @ 0.8 × VDDQ 14.0 8.3 7.5 mA
34 Ohm Output Driver Sensitivity

If either the temperature or the voltage changes after ZQ calibration, then the tolerance
limits listed in Table 37 (page 64) can be expected to widen according to Table 42 and
Table 43 (page 66).
Table 42: 34 Ohm Output Driver Sensitivity Definition
Symbol Min Max Unit

RON(PD) @ 0.2 × VDDQ 0.6 - dRONdTL × |ΔT| - dRONdVL × |ΔV| 1.1 + dRONdTL × |ΔT| + dRONdVL × |ΔV| RZQ/7
RON(PD) @ 0.5 × VDDQ 0.9 - dRONdTM × |ΔT| - dRONdVM × |ΔV| 1.1 + dRONdTM × |ΔT| + dRONdVM × |ΔV| RZQ/7
RON(PD) @ 0.8 × VDDQ 0.9 - dRONdTH × |ΔT| - dRONdVH × |ΔV| 1.4 + dRONdTH × |ΔT| + dRONdVH × |ΔV| RZQ/7
RON(PU) @ 0.2 × VDDQ 0.9 - dRONdTL × |ΔT| - dRONdVL × |ΔV| 1.4 + dRONdTL × |ΔT| + dRONdVL × |ΔV| RZQ/7
RON(PU) @ 0.5 × VDDQ 0.9 - dRONdTM × |ΔT| - dRONdVM × |ΔV| 1.1 + dRONdTM × |ΔT| + dRONdVM × |ΔV| RZQ/7
RON(PU) @ 0.8 × VDDQ 0.6 - dRONdTH × |ΔT| - dRONdVH × |ΔV| 1.1 + dRONdTH × |ΔT| + dRONdVH × |ΔV| RZQ/7
Note: 1. ΔT = T - T(@CALIBRATION)ΔV = VDDQ - VDDQ(@CALIBRATION); and VDD = VDDQ.
Table 43: 34 Ohm Output Driver Voltage and Temperature Sensitivity
Change Min Max Unit

dRONdTM 0 1.5 %/°C
dRONdVM 0 0.13 %/mV
dRONdTL 0 1.5 %/°C
dRONdVL 0 0.13 %/mV
dRONdTH 0 1.5 %/°C
dRONdVH 0 0.13 %/mV
Alternative 40 Ohm Driver
Table 44: 40 Ohm Driver Impedance Characteristics
MR1[5,1] RON Resistor VOUT Min Nom Max Unit

0,0 Ω RON40(PD) 0.2 × VDDQ 0.6 1.0 1.1 RZQ/6
0.5 × VDDQ 0.9 1.0 1.1 RZQ/6
0.8 × VDDQ 0.9 1.0 1.4 RZQ/6
RON40(PU) 0.2 × VDDQ 0.9 1.0 1.4 RZQ/6
0.5 × VDDQ 0.9 1.0 1.1 RZQ/6
0.8 × VDDQ 0.6 1.0 1.1 RZQ/6
Pull-up/pull-down mismatch (MMPUPD) 0.5 × VDDQ –10% n/a 10 %
Notes: 1. Tolerance limits assume RZQ of 240Ω ±1% and are applicable after proper ZQ calibra-
tion has been performed at a stable temperature and voltage (VDDQ = VDD; VSSQ = VSS).
Refer to 40 Ohm Output Driver Sensitivity (page 67) if either the temperature or the
voltage changes after calibration.
2. Measurement definition for mismatch between pull-up and pull-down (MMPUPD). Meas-
ure both RON(PU) and RON(PD) at 0.5 × VDDQ:
RON(PU) - RON(PD)
MMPUPD = × 100
RON,nom
3. For IT and AT (1Gb only) devices, the minimum values are derated by 6% when the de-
vice operates between –40°C and 0°C (TC).
40 Ohm Output Driver Sensitivity

If either the temperature or the voltage changes after I/O calibration, then the tolerance
limits listed in Table 44 can be expected to widen according to Table 45 and Table 46
(page 68).
Table 45: 40 Ohm Output Driver Sensitivity Definition
Symbol Min Max Unit

RON(PD) @ 0.2 × VDDQ 0.6 - dRONdTL × |ΔT| - dRONdVL × |ΔV| 1.1 + dRONdTL × |ΔT| + dRONdVL × |ΔV| RZQ/6
RON(PD) @ 0.5 × VDDQ 0.9 - dRONdTM × |ΔT| - dRONdVM × |ΔV| 1.1 + dRONdTM × |ΔT| + dRONdVM × |ΔV| RZQ/6
RON(PD) @ 0.8 × VDDQ 0.9 - dRONdTH × |ΔT| - dRONdVH × |ΔV| 1.4 + dRONdTH × |ΔT| + dRONdVH × |ΔV| RZQ/6
RON(PU) @ 0.2 × VDDQ 0.9 - dRONdTL × |ΔT| - dRONdVL × |ΔV| 1.4 + dRONdTL × |ΔT| + dRONdVL × |ΔV| RZQ/6
RON(PU) @ 0.5 × VDDQ 0.9 - dRONdTM × |ΔT| - dRONdVM × |ΔV| 1.1 + dRONdTM × |ΔT| + dRONdVM × |ΔV| RZQ/6
RON(PU) @ 0.8 × VDDQ 0.6 - dRONdTH × |ΔT| - dRONdVH × |ΔV| 1.1 + dRONdTH × |ΔT| + dRONdVH × |ΔV| RZQ/6
Note: 1. ΔT = T - T(@CALIBRATION)ΔV = VDDQ - VDDQ(@CALIBRATION); and VDD = VDDQ.
Table 46: 40 Ohm Output Driver Voltage and Temperature Sensitivity
Change Min Max Unit

dRONdTM 0 1.5 %/°C
dRONdVM 0 0.15 %/mV
dRONdTL 0 1.5 %/°C
dRONdVL 0 0.15 %/mV
dRONdTH 0 1.5 %/°C
dRONdVH 0 0.15 %/mV
Output Characteristics and Operating Conditions

The DRAM uses both single-ended and differential output drivers. The single-ended
output driver is summarized below, while the differential output driver is summarized
in Table 48 (page 70).
Table 47: Single-Ended Output Driver Characteristics

Output leakage current: DQ are disabled; IOZ –5 5 μA 1
0V ≤ VOUT ≤ VDDQ; ODT is disabled; ODT is HIGH
Output slew rate: Single-ended; For rising and falling edges, SRQse 2.5 6 V/ns 1, 2, 3, 4
measure between VOL(AC) = VREF - 0.1 × VDDQ and VOH(AC) =
VREF + 0.1 × VDDQ
Single-ended DC high-level output voltage VOH(DC) 0.8 × VDDQ V 1, 2, 5
Single-ended DC mid-point level output voltage VOM(DC) 0.5 × VDDQ V 1, 2, 5
Single-ended DC low-level output voltage VOL(DC) 0.2 × VDDQ V 1, 2, 5
Single-ended AC high-level output voltage VOH(AC) VTT + 0.1 × VDDQ V 1, 2, 3, 6
Single-ended AC low-level output voltage VOL(AC) VTT - 0.1 × VDDQ V 1, 2, 3, 6
Delta RON between pull-up and pull-down for DQ/DQS MMPUPD –10 10 % 1, 7
Test load for AC timing and output slew rates Output to VTT (VDDQ/2) via 25Ω resistor 3
Notes: 1. RZQ of 240Ω ±1% with RZQ/7 enabled (default 34Ω driver) and is applicable after prop-
er ZQ calibration has been performed at a stable temperature and voltage (VDDQ = VDD;
VSSQ = VSS).
2. VTT = VDDQ/2.
3. See Figure 29 (page 71) for the test load configuration.
4. The 6 V/ns maximum is applicable for a single DQ signal when it is switching either from
HIGH to LOW or LOW to HIGH while the remaining DQ signals in the same byte lane are
either all static or all switching in the opposite direction. For all other DQ signal switch-
ing combinations, the maximum limit of 6 V/ns is reduced to 5 V/ns.
5. See Table 37 (page 64) for IV curve linearity. Do not use AC test load.
6. See Table 49 (page 72) for output slew rate.
7. See Table 37 (page 64) for additional information.
8. See Figure 27 (page 70) for an example of a single-ended output signal.
Table 48: Differential Output Driver Characteristics

Output leakage current: DQ are disabled; IOZ –5 5 μA 1
0V ≤ VOUT ≤ VDDQ; ODT is disabled; ODT is HIGH
Output slew rate: Differential; For rising and falling SRQdiff 5 12 V/ns 1
edges, measure between VOL,diff(AC) = –0.2 × VDDQ and
VOH,diff(AC) = +0.2 × VDDQ
Output differential cross-point voltage VOX(AC) VREF - 150 VREF + 150 mV 1, 2, 3
Differential high-level output voltage VOH,diff(AC) +0.2 × VDDQ V 1, 4
Differential low-level output voltage VOL,diff(AC) –0.2 × VDDQ V 1, 4
Delta RON between pull-up and pull-down for DQ/DQS MMPUPD –10 10 % 1, 5
Test load for AC timing and output slew rates Output to VTT (VDDQ/2) via 25Ω resistor 3
Notes: 1. RZQ of 240Ω ±1% with RZQ/7 enabled (default 34Ω driver) and is applicable after prop-
er ZQ calibration has been performed at a stable temperature and voltage (VDDQ = VDD;
VSSQ = VSS).
2. VREF = VDDQ/2; slew rate @ 5 V/ns, interpolate for faster slew rate.
3. See Figure 29 (page 71) for the test load configuration.
4. See Table 50 (page 73) for the output slew rate.
5. See Table 37 (page 64) for additional information.
6. See Figure 28 (page 71) for an example of a differential output signal.
Figure 27: DQ Output Signal

MAX output
VOH(AC)
VOL(AC)
MIN output
Figure 28: Differential Output Signal

MAX output
VOH
VOX(AC)max
X X
X
X VOX(AC)min
VOL
MIN output
Reference Output Load

Figure 29 represents the effective reference load of 25Ω used in defining the relevant de-
vice AC timing parameters (except ODT reference timing) as well as the output slew rate
measurements. It is not intended to be a precise representation of a particular system
environment or a depiction of the actual load presented by a production tester. System
designers should use IBIS or other simulation tools to correlate the timing reference
load to a system environment.
Figure 29: Reference Output Load for AC Timing and Output Slew Rate
VDDQ/2
DUT VREF
DQ RTT = 25ȍ
VTT = VDDQ/2
DQS
DQS#
Timing reference point
ZQ
RZQ = 240ȍ
VSS
Slew Rate Definitions for Single-Ended Output Signals

The single-ended output driver is summarized in Table 47 (page 69). With the reference
load for timing measurements, the output slew rate for falling and rising edges is de-
fined and measured between V OL(AC) and V OH(AC) for single-ended signals.
Table 49: Single-Ended Output Slew Rate Definition
Single-Ended Output Slew

Rates (Linear Signals) Measured
Output Edge From To Calculation
DQ Rising VOL(AC) VOH(AC) VOH(AC) - VOL(AC)
ΔTRse
Falling VOH(AC) VOL(AC) VOH(AC) - VOL(AC)

ΔTFse
Figure 30: Nominal Slew Rate Definition for Single-Ended Output Signals
ΔTRse
VOH(AC)
VTT
VOL(AC)
ΔTFse
Slew Rate Definitions for Differential Output Signals

The differential output driver is summarized in Table 48 (page 70). With the reference
load for timing measurements, the output slew rate for falling and rising edges is de-
fined and measured between V OL(AC) and V OH(AC) for differential signals.
Table 50: Differential Output Slew Rate Definition
Differential Output Slew

Rates (Linear Signals) Measured
Output Edge From To Calculation
DQS, DQS# Rising VOL,diff(AC) VOH,diff(AC) VOH,diff(AC) - VOL,diff(AC)
ΔTRdiff
Falling VOH,diff(AC) VOL,diff(AC) VOH,diff(AC) - VOL,diff(AC)

ΔTFdiff
Figure 31: Nominal Differential Output Slew Rate Definition for DQS, DQS#
ΔTRdiff
VOH,diff(AC)
VOL,diff(AC)
ΔTFdiff
Speed Bin Tables
Speed Bin Tables
Table 51: DDR3-1066 Speed Bins
DDR3-1066 Speed Bin -187E -187

CL-tRCD-tRP 7-7-7 8-8-8
Parameter Symbol Min Max Min Max Unit Notes
Internal READ command to first data tAA 13.125 – 15 – ns
ACTIVATE to internal READ or WRITE delay tRCD 13.125 – 15 – ns
time
PRECHARGE command period tRP 13.125 – 15 – ns
ACTIVATE-to-ACTIVATE or REFRESH command tRC 50.625 – 52.5 – ns
period
ACTIVATE-to-PRECHARGE command period tRAS 37.5 9 x tREFI 37.5 9 x tREFI ns 1
CL = 5 CWL = 5 tCK (AVG) 3.0 3.3 3.0 3.3 ns 2
CWL = 6 tCK (AVG) Reserved Reserved ns 3
CL = 6 CWL = 5 tCK (AVG) 2.5 3.3 2.5 3.3 ns 2
CL = 7 CWL = 5 tCK (AVG) Reserved Reserved ns 3
CWL = 6 tCK (AVG) 1.875 <2.5 Reserved ns 2, 3
CWL = 6 tCK (AVG) 1.875 <2.5 1.875 <2.5 ns 2
Supported CL settings 5, 6, 7, 8 5, 6, 8 CK
Supported CWL settings 5, 6 5, 6 CK
Notes: 1. tREFI depends on TOPER.

2. The CL and CWL settings result in tCK requirements. When making a selection of tCK,
both CL and CWL requirement settings need to be fulfilled.
3. Reserved settings are not allowed.
Speed Bin Tables
DDR3-1333 Speed Bin -15E1 -152

CL-tRCD-tRP 9-9-9 10-10-10
Internal READ command to first data tAA 13.5 – 15 – ns
ACTIVATE to internal READ or WRITE delay tRCD 13.5 – 15 – ns
time
PRECHARGE command period tRP 13.5 – 15 – ns
ACTIVATE-to-ACTIVATE or REFRESH command tRC 49.5 – 51 – ns
period
ACTIVATE-to-PRECHARGE command period tRAS 36 9 x tREFI 36 9 x tREFI ns 3
CL = 5 CWL = 5 tCK (AVG) 3.0 3.3 3.0 3.3 ns 4
CWL = 6, 7 tCK (AVG) Reserved Reserved ns 5
CL = 6 CWL = 5 tCK (AVG) 2.5 3.3 2.5 3.3 ns 4
CWL = 6 tCK (AVG) 1.875 <2.5 1.875 <2.5 ns 4
CL = 9 CWL = 5, 6 tCK (AVG) Reserved Reserved ns 5
CL = 10 CWL = 5, 6 tCK (AVG) Reserved Reserved ns 5
CWL = 7 tCK (AVG) 1.5 <1.875 1.5 <1.875 ns 4
Supported CL settings 5, 6, 7, 8, 9, 10 5, 6, 8, 10 CK
Supported CWL settings 5, 6, 7 5, 6, 7 CK
Notes: 1. The -15E speed grade is backward compatible with 1066, CL = 7 (-187E).
2. The -15 speed grade is backward compatible with 1066, CL = 8 (-187).
3. tREFI depends on T
OPER.
Speed Bin Tables
DDR3-1600 Speed Bin -1251

CL-tRCD-tRP 11-11-11
Parameter Symbol Min Max Unit Notes
Internal READ command to first data tAA 13.75 – ns
ACTIVATE to internal READ or WRITE delay time tRCD 13.75 – ns
PRECHARGE command period tRP 13.75 – ns
ACTIVATE-to-ACTIVATE or REFRESH command period tRC 48.75 – ns
ACTIVATE-to-PRECHARGE command period tRAS 35 9 x tREFI ns 2
CL = 5 CWL = 5 tCK (AVG) 3.0 3.3 ns 3
CWL = 6, 7, 8 tCK (AVG) Reserved ns 4
CL = 6 CWL = 5 tCK (AVG) 2.5 3.3 ns 3
CWL = 6 tCK (AVG) Reserved ns 4
CWL = 7, 8 tCK (AVG) Reserved ns 4
CL = 7 CWL = 5 tCK (AVG) Reserved ns 4
CWL = 6 tCK (AVG) 1.875 <2.5 ns 3
CL = 8 CWL = 5 tCK (AVG) Reserved ns 4
CWL = 6 tCK (AVG) 1.875 <2.5 ns 3
CL = 9 CWL = 5, 6 tCK (AVG) Reserved ns 4
CWL = 7 tCK (AVG) 1.5 <1.875 ns 3
CL = 10 CWL = 5, 6 tCK (AVG) Reserved ns 4
CWL = 7 tCK (AVG) 1.5 <1.875 ns 3
CL = 11 CWL = 5, 6, 7 tCK (AVG) Reserved ns 4
CWL = 8 tCK (AVG) 1.25 <1.5 ns 3
Supported CL settings 5, 6, 7, 8, 9, 10, 11 CK
Supported CWL settings 5, 6, 7, 8 CK
Notes: 1. The -125 speed grade is backward compatible with 1333, CL = 9 (-15E) and 1066, CL = 7
(-187E).
2. tREFI depends on TOPER.
Speed Bin Tables

Internal READ command to first data tAA 13.91 20
CL = 5 CWL = 5 tCK (AVG) 3.0 3.3 ns 3
CWL = 6, 7, 8, 9 tCK (AVG) Reserved ns 4
CL = 6 CWL = 5 tCK (AVG) 2.5 3.3 ns 3
CL = 7 CWL = 5, 7, 8, 9 tCK (AVG) Reserved ns 4
CWL = 6 tCK (AVG) 1.875 <2.5 ns 3
CWL = 6 tCK (AVG) 1.875 <2.5 ns 3
CWL = 7 tCK (AVG) 1.5 <1.875 ns 3
CWL = 7 tCK (AVG) 1.5 <1.875 ns 3
CWL = 8 tCK (AVG) 1.25 <1.5 ns 3
CWL = 9 tCK (AVG) 1.07 <1.25 ns 3
Supported CL settings 5, 6, 7, 8, 9, 10, 11, 13 CK
Supported CWL settings 5, 6, 7, 8, 9 CK
Notes: 1. The -107 speed grade is backward compatible with 1600, CL = 11 (-125); 1333, CL = 9
(-15E); and 1066, CL = 7 (-187E).
Speed Bin Tables

Internal READ command to first data tAA 13.09 20
CL = 5 CWL = 5 tCK (AVG) 3.0 3.3 ns 3
CL = 6 CWL = 5 tCK (AVG) 2.5 3.3 ns 3
CWL = 6 tCK (AVG) 1.875 <2.5 ns 3
CWL = 6 tCK (AVG) 1.875 <2.5 ns 3
CWL = 7 tCK (AVG) 1.5 <1.875 ns 3
CWL = 7 tCK (AVG) 1.5 <1.875 ns 3
CWL = 8 tCK (AVG) 1.25 <1.5 ns 3
CWL = 9 tCK (AVG) 1.07 <1.25 ns 3
CL = 14 CWL = 5, 6, 7, 8, 9 tCK (AVG) Reserved Reserved ns 4
CWL = 10 tCK (AVG) 0.938 <1.07 ns 3
Supported CL settings 5, 6, 7, 8, 9, 10, 11, 13, 14 CK
Supported CWL settings 5, 6, 7, 8, 9 CK
Notes: 1. The -093 speed grade is backward compatible with 1866, CL = 13 (-107); 1600, CL = 11
(-125); 1333, CL = 9 (-15E); and 1066, CL = 7 (-187E).
2Gb_DDR3_SDRAM.pdf - Rev. S 02/16 EN
PDF: 09005aef826aaadc
Electrical Characteristics and AC Operating Conditions
Table 56: Electrical Characteristics and AC Operating Conditions

Notes 1–8 apply to the entire table
DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600
Parameter Symbol Min Max Min Max Min Max Min Max Unit Notes
Clock Timing
Clock period average: TC ≤ 85°C tCK 8 7800 8 7800 8 7800 8 7800 ns 9, 42
DLL disable mode TC = >85°C to 95°C (DLL_DIS) 8 3900 8 3900 8 3900 8 3900 ns 42
Clock period average: DLL enable mode tCK (AVG) See Speed Bin Tables (page 74) for tCK range allowed ns 10, 11
High pulse width average tCH (AVG) 0.47 0.53 0.47 0.53 0.47 0.53 0.47 0.53 CK 12
Low pulse width average tCL (AVG) 0.47 0.53 0.47 0.53 0.47 0.53 0.47 0.53 CK 12

Clock period jitter DLL locked tJITper –100 100 –90 90 –80 80 –70 70 ps 13
DLL locking tJITper,lck –90 90 –80 80 –70 70 –60 60 ps 13
Clock absolute period tCK (ABS) MIN = tCK (AVG) MIN + tJITper MIN; MAX = tCK (AVG) MAX + tJITper ps
MAX
Clock absolute high pulse width tCH (ABS) 0.43 – 0.43 – 0.43 – 0.43 – tCK 14
(AVG)
79
Clock absolute low pulse width tCL (ABS) 0.43 – 0.43 – 0.43 – 0.43 – tCK 15
(AVG)
Cycle-to-cycle jitter DLL locked tJITcc 200 180 160 140 ps 16
Micron Technology, Inc. reserves the right to change products or specifications without notice.
DLL locking tJITcc,lck 180 160 140 120 ps 16

Cumulative error across 2 cycles tERR2per –147 147 –132 132 –118 118 –103 103 ps 17

3 cycles tERR3per –175 175 –157 157 –140 140 –122 122 ps 17
© 2006 Micron Technology, Inc. All rights reserved.
n = 13, 14 . . . 49, 50 tERRnper tERRnper MIN = (1 + 0.68ln[n]) × tJITper MIN ps 17
cycles tERRnper MAX = (1 + 0.68ln[n]) × tJITper MAX
Table 56: Electrical Characteristics and AC Operating Conditions (Continued)

DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600
DQ Input Timing
Data setup time to Base (specification) tDS 75 – 25 – – – – – ps 18, 19,
DQS, DQS# (AC175) 44
VREF @ 1 V/ns 250 – 200 – – – – – ps 19, 20
Data setup time to Base (specification) tDS 125 – 75 – 30 – 10 – ps 18, 19,
DQS, DQS# (AC150) 44
VREF @ 1 V/ns 275 – 250 – 180 – 160 – ps 19, 20
Data setup time to Base (specification) tDS – – – – – – – – ps 18, 19

DQS, DQS# VREF @ 1 V/ns (AC135) – – – – – – – – ps 19, 20
Data hold time from Base (specification) tDH 150 – 100 – 65 – 45 – ps 18, 19
DQS, DQS# VREF @ 1 V/ns (DC100) 250 – 200 – 165 – 145 – ps 19, 20
Minimum data pulse width tDIPW 600 – 490 – 400 – 360 – ps 41
DQ Output Timing
80
DQS, DQS# to DQ skew, per access tDQSQ – 200 – 150 – 125 – 100 ps
DQ output hold time from DQS, DQS# tQH 0.38 – 0.38 – 0.38 – 0.38 – tCK 21
(AVG)
tLZDQ
DQ Low-Z time from CK, CK# –800 400 –600 300 –500 250 –450 225 ps 22, 23
DQ High-Z time from CK, CK# tHZDQ – 400 – 300 – 250 – 225 ps 22, 23
DQ Strobe Input Timing

DQS, DQS# rising to CK, CK# rising tDQSS –0.25 0.25 –0.25 0.25 –0.25 0.25 –0.27 0.27 CK 25
DQS, DQS# differential input low pulse width tDQSL 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 CK
DQS, DQS# differential input high pulse tDQSH 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 CK
width
DQS, DQS# falling setup to CK, CK# rising tDSS 0.2 – 0.2 – 0.2 – 0.18 – CK 25
DQS, DQS# falling hold from CK, CK# rising tDSH 0.2 – 0.2 – 0.2 – 0.18 – CK 25
DQS, DQS# differential WRITE preamble tWPRE 0.9 – 0.9 – 0.9 – 0.9 – CK
DQS, DQS# differential WRITE postamble tWPST 0.3 – 0.3 – 0.3 – 0.3 – CK
DQ Strobe Output Timing
DQS, DQS# rising to/from rising CK, CK# tDQSCK –400 400 –300 300 –255 255 –225 225 ps 23
DQS, DQS# rising to/from rising CK, CK# tDQSCK 1 10 1 10 1 10 1 10 ns 26
when DLL is disabled (DLL_DIS)

DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600
DQS, DQS# differential output high time tQSH 0.38 – 0.38 – 0.40 – 0.40 – CK 21
DQS, DQS# differential output low time tQSL 0.38 – 0.38 – 0.40 – 0.40 – CK 21
DQS, DQS# Low-Z time (RL - 1) tLZDQS –800 400 –600 300 –500 250 –450 225 ps 22, 23
DQS, DQS# High-Z time (RL + BL/2) tHZDQS – 400 – 300 – 250 – 225 ps 22, 23
DQS, DQS# differential READ preamble tRPRE 0.9 Note 24 0.9 Note 24 0.9 Note 24 0.9 Note 24 CK 23, 24
DQS, DQS# differential READ postamble tRPST 0.3 Note 27 0.3 Note 27 0.3 Note 27 0.3 Note 27 CK 23, 27
Command and Address Timing
DLL locking time tDLLK 512 – 512 – 512 – 512 – CK 28

CTRL, CMD, ADDR Base (specification) tIS 200 – 125 – 65 – 45 – ps 29, 30,
setup to CK,CK# (AC175) 44
VREF @ 1 V/ns 375 – 300 – 240 – 220 – ps 20, 30
CTRL, CMD, ADDR Base (specification) tIS 350 – 275 – 190 – 170 – ps 29, 30,
81
VREF @ 1 V/ns 500 – 425 – 340 – 320 – ps 20, 30

CTRL, CMD, ADDR hold Base (specification) tIH 275 – 200 – 140 – 120 – ps 29, 30
from CK,CK# VREF @ 1 V/ns (DC100) 375 – 300 – 240 – 220 – ps 20, 30
Minimum CTRL, CMD, ADDR pulse width tIPW 900 – 780 – 620 – 560 – ps 41
ACTIVATE to internal READ or WRITE delay tRCD See Speed Bin Tables (page 74) for tRCD ns 31
PRECHARGE command period tRP See Speed Bin Tables (page 74) for tRP ns 31

ACTIVATE-to-PRECHARGE command period tRAS See Speed Bin Tables (page 74) for tRAS ns 31, 32
ACTIVATE-to-ACTIVATE command period tRC See Speed Bin Tables (page 74) for tRC ns 31, 43
ACTIVATE-to-ACTIVATE x4/x8 (1KB page tRRD MIN = greater of MIN = greater of MIN = greater of MIN = greater of CK 31
minimum command size) 4CK or 10ns 4CK or 7.5ns 4CK or 6ns 4CK or 6ns
period
x16 (2KB page size) MIN = greater of 4CK or 10ns MIN = greater of 4CK or 7.5ns CK 31
Four ACTIVATE x4/x8 (1KB page tFAW 40 – 37.5 – 30 – 30 – ns 31
windows size)
x16 (2KB page size) 50 – 50 – 45 – 40 – ns 31
Write recovery time tWR MIN = 15ns; MAX = n/a ns 31, 32,
33,34
Delay from start of internal WRITE tWTR MIN = greater of 4CK or 7.5ns; MAX = n/a CK 31, 34
transaction to internal READ command

DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600
READ-to-PRECHARGE time tRTP MIN = greater of 4CK or 7.5ns; MAX = n/a CK 31, 32
CAS#-to-CAS# command delay tCCD MIN = 4CK; MAX = n/a CK
Auto precharge write recovery + precharge tDAL MIN = WR + tRP/tCK (AVG); MAX = n/a CK
time
MODE REGISTER SET command cycle time tMRD MIN = 4CK; MAX = n/a CK
MODE REGISTER SET command update delay tMOD MIN = greater of 12CK or 15ns; MAX = n/a CK
MULTIPURPOSE REGISTER READ burst end to tMPRR MIN = 1CK; MAX = n/a CK
mode register set for multipurpose register

exit
Calibration Timing
ZQCL command: Long POWER-UP and RE- tZQinit 512 – 512 – 512 – 512 – CK
calibration time SET operation
Normal operation tZQoper 256 – 256 – 256 – 256 – CK
ZQCS command: Short calibration time tZQCS 64 – 64 – 64 – 64 – CK
82
Initialization and Reset Timing

Exit reset from CKE HIGH to a valid command tXPR MIN = greater of 5CK or tRFC + 10ns; MAX = n/a CK
Begin power supply ramp to power supplies tVDDPR MIN = n/a; MAX = 200 ms
stable
RESET# LOW to power supplies stable tRPS MIN = 0; MAX = 200 ms

RESET# LOW to I/O and RTT High-Z tIOZ MIN = n/a; MAX = 20 ns 35
Refresh Timing
REFRESH-to-ACTIVATE or REFRESH tRFC – 1Gb MIN = 110; MAX = 70,200 ns
command period tRFC – 2Gb MIN = 160; MAX = 70,200 ns
tRFC – 4Gb MIN = 260; MAX = 70,200 ns
tRFC – 8Gb MIN = 350; MAX = 70,200 ns

Maximum refresh TC ≤ 85°C – 64 (1X) ms 36
period TC > 85°C 32 (2X) ms 36
Maximum average TC ≤ 85°C tREFI 7.8 (64ms/8192) μs 36
periodic refresh TC > 85°C 3.9 (32ms/8192) μs 36
Self Refresh Timing

DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600
Exit self refresh to commands not requiring a tXS MIN = greater of 5CK or tRFC + 10ns; MAX = n/a CK
locked DLL
Exit self refresh to commands requiring a tXSDLL MIN = tDLLK (MIN); MAX = n/a CK 28
locked DLL
Minimum CKE low pulse width for self re- tCKESR MIN = tCKE (MIN) + CK; MAX = n/a CK
fresh entry to self refresh exit timing
Valid clocks after self refresh entry or power- tCKSRE MIN = greater of 5CK or 10ns; MAX = n/a CK
down entry
tCKSRX

Valid clocks before self refresh exit, MIN = greater of 5CK or 10ns; MAX = n/a CK
power-down exit, or reset exit
Power-Down Timing
CKE MIN pulse width tCKE (MIN) Greater of 3CK Greater of 3CK Greater of 3CK Greater of 3CK CK
or 7.5ns or 5.625ns or 5.625ns or 5ns
Command pass disable delay tCPDED MIN = 1; MAX = n/a CK
83
Power-down entry to power-down exit tim- tPD MIN = tCKE (MIN); MAX = 9 * tREFI CK
ing
Begin power-down period prior to CKE tANPD WL - 1CK CK
registered HIGH
Power-down entry period: ODT either PDE Greater of tANPD or tRFC - REFRESH command to CKE LOW time CK
synchronous or asynchronous

Power-down exit period: ODT either PDX tANPD + tXPDLL CK
Power-Down Entry Minimum Timing
ACTIVATE command to power-down entry tACTPDEN MIN = 1 CK
PRECHARGE/PRECHARGE ALL command to tPRPDEN MIN = 1 CK
power-down entry
REFRESH command to power-down entry tREFPDEN MIN = 1 CK 37
MRS command to power-down entry tMRSPDEN MIN = tMOD (MIN) CK
READ/READ with auto precharge command tRDPDEN MIN = RL + 4 + 1 CK
to power-down entry
WRITE command to BL8 (OTF, MRS) tWRPDEN MIN = WL + 4 + tWR/tCK (AVG) CK
power-down entry BC4OTF
BC4MRS tWRPDEN MIN = WL + 2 + tWR/tCK (AVG) CK

DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600
WRITE with auto BL8 (OTF, MRS) tWRAP- MIN = WL + 4 + WR + 1 CK
precharge command to BC4OTF DEN
power-down entry BC4MRS tWRAP- MIN = WL + 2 + WR + 1 CK
DEN
Power-Down Exit Timing
DLL on, any valid command, or DLL off to tXP MIN = greater of 3CK or 7.5ns; MIN = greater of 3CK or 6ns; CK
commands not requiring locked DLL MAX = n/a MAX = n/a
Precharge power-down with DLL off to tXPDLL MIN = greater of 10CK or 24ns; MAX = n/a CK 28

commands requiring a locked DLL
ODT Timing
RTT synchronous turn-on delay ODTLon CWL + AL - 2CK CK 38
RTT synchronous turn-off delay ODTLoff CWL + AL - 2CK CK 40
RTT turn-on from ODTL on reference tAON –400 400 –300 300 –250 250 –225 225 ps 23, 38
RTT turn-off from ODTL off reference tAOF 0.3 0.7 0.3 0.7 0.3 0.7 0.3 0.7 CK 39, 40
84
Asynchronous RTT turn-on delay tAONPD MIN = 2; MAX = 8.5 ns 38

(power-down with DLL off)
Asynchronous RTT turn-off delay tAOFPD MIN = 2; MAX = 8.5 ns 40

ODT HIGH time with WRITE command and ODTH8 MIN = 6; MAX = n/a CK

BL8
ODT HIGH time without WRITE command or ODTH4 MIN = 4; MAX = n/a CK
with WRITE command and BC4
Dynamic ODT Timing
RTT,nom-to-RTT(WR) change skew ODTLcnw WL - 2CK CK
RTT(WR)-to-RTT,nom change skew - BC4 ODTLcwn4 4CK + ODTLoff CK

RTT(WR)-to-RTT,nom change skew - BL8 ODTLcwn8 6CK + ODTLoff CK
RTT dynamic change skew tADC 0.3 0.7 0.3 0.7 0.3 0.7 0.3 0.7 CK 39
Write Leveling Timing
First DQS, DQS# rising edge tWLMRD 40 – 40 – 40 – 40 – CK
DQS, DQS# delay tWLDQSEN 25 – 25 – 25 – 25 – CK
Write leveling setup from rising CK, CK# tWLS 325 – 245 – 195 – 165 – ps
crossing to rising DQS, DQS# crossing

DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600
Write leveling hold from rising DQS, DQS# tWLH 325 – 245 – 195 – 165 – ps
crossing to rising CK, CK# crossing
Write leveling output delay tWLO 0 9 0 9 0 9 0 7.5 ns
Write leveling output error tWLOE 0 2 0 2 0 2 0 2 ns

85

Notes: 1. AC timing parameters are valid from specified TC MIN to TC MAX values.
2. All voltages are referenced to VSS.
3. Output timings are only valid for RON34 output buffer selection.
4. The unit tCK (AVG) represents the actual tCK (AVG) of the input clock under operation.
The unit CK represents one clock cycle of the input clock, counting the actual clock
edges.
5. AC timing and IDD tests may use a VIL-to-VIH swing of up to 900mV in the test environ-
ment, but input timing is still referenced to VREF (except tIS, tIH, tDS, and tDH use the
AC/DC trip points and CK, CK# and DQS, DQS# use their crossing points). The minimum
slew rate for the input signals used to test the device is 1 V/ns for single-ended inputs
and 2 V/ns for differential inputs in the range between VIL(AC) and VIH(AC).
6. All timings that use time-based values (ns, μs, ms) should use tCK (AVG) to determine the
correct number of clocks (Table 56 (page 79) uses CK or tCK [AVG] interchangeably). In
the case of noninteger results, all minimum limits are to be rounded up to the nearest
whole integer, and all maximum limits are to be rounded down to the nearest whole
integer.
7. Strobe or DQSdiff refers to the DQS and DQS# differential crossing point when DQS is
the rising edge. Clock or CK refers to the CK and CK# differential crossing point when
CK is the rising edge.
8. This output load is used for all AC timing (except ODT reference timing) and slew rates.
The actual test load may be different. The output signal voltage reference point is
VDDQ/2 for single-ended signals and the crossing point for differential signals (see Figure
29 (page 71)).
9. When operating in DLL disable mode, Micron does not warrant compliance with normal
mode timings or functionality.
10. The clock’s tCK (AVG) is the average clock over any 200 consecutive clocks and tCK (AVG)
MIN is the smallest clock rate allowed, with the exception of a deviation due to clock
jitter. Input clock jitter is allowed provided it does not exceed values specified and must
be of a random Gaussian distribution in nature.
11. Spread spectrum is not included in the jitter specification values. However, the input
clock can accommodate spread-spectrum at a sweep rate in the range of 20–60 kHz with
an additional 1% of tCK (AVG) as a long-term jitter component; however, the spread
spectrum may not use a clock rate below tCK (AVG) MIN.
12. The clock’s tCH (AVG) and tCL (AVG) are the average half clock period over any 200 con-
secutive clocks and is the smallest clock half period allowed, with the exception of a de-
viation due to clock jitter. Input clock jitter is allowed provided it does not exceed values
specified and must be of a random Gaussian distribution in nature.
13. The period jitter (tJITper) is the maximum deviation in the clock period from the average
or nominal clock. It is allowed in either the positive or negative direction.
14. tCH (ABS) is the absolute instantaneous clock high pulse width as measured from one
rising edge to the following falling edge.

15. tCL (ABS) is the absolute instantaneous clock low pulse width as measured from one fall-
ing edge to the following rising edge.

16. The cycle-to-cycle jitter tJITcc is the amount the clock period can deviate from one cycle
to the next. It is important to keep cycle-to-cycle jitter at a minimum during the DLL
locking time.
17. The cumulative jitter error tERRnper, where n is the number of clocks between 2 and 50,
is the amount of clock time allowed to accumulate consecutively away from the average
clock over n number of clock cycles.
18. tDS (base) and tDH (base) values are for a single-ended 1 V/ns slew rate DQs and 2 V/ns
slew rate differential DQS, DQS#.

19. These parameters are measured from a data signal (DM, DQ0, DQ1, and so forth) transi-
tion edge to its respective data strobe signal (DQS, DQS#) crossing.
20. The setup and hold times are listed converting the base specification values (to which
derating tables apply) to VREF when the slew rate is 1 V/ns. These values, with a slew rate
of 1 V/ns, are for reference only.
21. When the device is operated with input clock jitter, this parameter needs to be derated
by the actual tJITper (larger of tJITper (MIN) or tJITper (MAX) of the input clock (output
deratings are relative to the SDRAM input clock).
22. Single-ended signal parameter.
23. The DRAM output timing is aligned to the nominal or average clock. Most output pa-
rameters must be derated by the actual jitter error when input clock jitter is present,
even when within specification. This results in each parameter becoming larger. The fol-
lowing parameters are required to be derated by subtracting tERR10per (MAX): tDQSCK
(MIN), tLZDQS (MIN), tLZDQ (MIN), and tAON (MIN). The following parameters are re-
quired to be derated by subtracting tERR10per (MIN): tDQSCK (MAX), tHZ (MAX), tLZDQS
(MAX), tLZDQ MAX, and tAON (MAX). The parameter tRPRE (MIN) is derated by subtract-
ing tJITper (MAX), while tRPRE (MAX) is derated by subtracting tJITper (MIN).
24. The maximum preamble is bound by tLZDQS (MAX).
25. These parameters are measured from a data strobe signal (DQS, DQS#) crossing to its re-
spective clock signal (CK, CK#) crossing. The specification values are not affected by the
amount of clock jitter applied, as these are relative to the clock signal crossing. These
parameters should be met whether clock jitter is present.
26. The tDQSCK (DLL_DIS) parameter begins CL + AL - 1 cycles after the READ command.
27. The maximum postamble is bound by tHZDQS (MAX).
28. Commands requiring a locked DLL are: READ (and RDAP) and synchronous ODT com-
mands. In addition, after any change of latency tXPDLL, timing must be met.
29. tIS (base) and tIH (base) values are for a single-ended 1 V/ns control/command/address
slew rate and 2 V/ns CK, CK# differential slew rate.
30. These parameters are measured from a command/address signal transition edge to its
respective clock (CK, CK#) signal crossing. The specification values are not affected by
the amount of clock jitter applied as the setup and hold times are relative to the clock
signal crossing that latches the command/address. These parameters should be met
whether clock jitter is present.
31. For these parameters, the DDR3 SDRAM device supports tnPARAM (nCK) = RU(tPARAM
[ns]/tCK[AVG] [ns]), assuming all input clock jitter specifications are satisfied. For exam-
ple, the device will support tnRP (nCK) = RU(tRP/tCK[AVG]) if all input clock jitter specifi-
cations are met. This means that for DDR3-800 6-6-6, of which tRP = 5ns, the device will
support tnRP = RU(tRP/tCK[AVG]) = 6 as long as the input clock jitter specifications are
met. That is, the PRECHARGE command at T0 and the ACTIVATE command at T0 + 6 are
valid even if six clocks are less than 15ns due to input clock jitter.
32. During READs and WRITEs with auto precharge, the DDR3 SDRAM will hold off the in-
ternal PRECHARGE command until tRAS (MIN) has been satisfied.
33. When operating in DLL disable mode, the greater of 4CK or 15ns is satisfied for tWR.
34. The start of the write recovery time is defined as follows:
• For BL8 (fixed by MRS or OTF): Rising clock edge four clock cycles after WL
• For BC4 (OTF): Rising clock edge four clock cycles after WL
• For BC4 (fixed by MRS): Rising clock edge two clock cycles after WL
35. RESET# should be LOW as soon as power starts to ramp to ensure the outputs are in
High-Z. Until RESET# is LOW, the outputs are at risk of driving and could result in exces-
sive current, depending on bus activity.
36. The refresh period is 64ms when TC is less than or equal to 85°C. This equates to an aver-
age refresh rate of 7.8125μs. However, nine REFRESH commands should be asserted at
least once every 70.3μs. When TC is greater than 85°C, the refresh period is 32ms.
37. Although CKE is allowed to be registered LOW after a REFRESH command when
tREFPDEN (MIN) is satisfied, there are cases where additional time such as tXPDLL (MIN)
is required.
38. ODT turn-on time MIN is when the device leaves High-Z and ODT resistance begins to
turn on. ODT turn-on time maximum is when the ODT resistance is fully on. The ODT
reference load is shown in Figure 21 (page 57). Designs that were created prior to JEDEC
tightening the maximum limit from 9ns to 8.5ns will be allowed to have a 9ns maxi-
mum.
39. Half-clock output parameters must be derated by the actual tERR10per and tJITdty when
input clock jitter is present. This results in each parameter becoming larger. The parame-
ters tADC (MIN) and tAOF (MIN) are each required to be derated by subtracting both
tERR10per (MAX) and tJITdty (MAX). The parameters tADC (MAX) and tAOF (MAX) are
required to be derated by subtracting both tERR10per (MAX) and tJITdty (MAX).

40. ODT turn-off time minimum is when the device starts to turn off ODT resistance. ODT
turn-off time maximum is when the DRAM buffer is in High-Z. The ODT reference load is
shown in Figure 22 (page 60). This output load is used for ODT timings (see Figure 29
(page 71)).
41. Pulse width of a input signal is defined as the width between the first crossing of
VREF(DC) and the consecutive crossing of VREF(DC).
42. Should the clock rate be larger than tRFC (MIN), an AUTO REFRESH command should
have at least one NOP command between it and another AUTO REFRESH command. Ad-
ditionally, if the clock rate is slower than 40ns (25 MHz), all REFRESH commands should
be followed by a PRECHARGE ALL command.
43. DRAM devices should be evenly addressed when being accessed. Disproportionate ac-
cesses to a particular row address may result in a reduction of REFRESH characteristics or
product lifetime.
Table 57: Electrical Characteristics and AC Operating Conditions for Speed Extensions
DDR3-1866 DDR3-2133
Clock Timing
Clock period average: TC = 0°C to 85°C tCK 8 7800 8 7800 ns 9, 42
DLL disable mode TC = >85°C to 95°C (DLL_DIS) 8 3900 8 3900 ns 42
Clock period average: DLL enable mode tCK (AVG) See Speed Bin Tables (page 74) for tCK range allowed ns 10, 11
High pulse width average tCH (AVG) 0.47 0.53 0.47 0.53 CK 12
Low pulse width average tCL (AVG) 0.47 0.53 0.47 0.53 CK 12

Clock period jitter DLL locked tJITper –60 60 –50 50 ps 13
DLL locking tJITper,lck –50 50 –40 40 ps 13
Clock absolute period tCK (ABS) MIN = tCK (AVG) MIN +
tJITper MIN; MAX =
tCK (AVG) MAX +
tJITper MAX ps
89
Clock absolute high pulse width tCH (ABS) 0.43 – 0.43 – tCK 14
(AVG)
Clock absolute low pulse width tCL (ABS) 0.43 – 0.43 – tCK 15
(AVG)
Cycle-to-cycle jitter DLL locked tJITcc 120 120 ps 16
DLL locking tJITcc,lck 100 100 ps 16

Table 57: Electrical Characteristics and AC Operating Conditions for Speed Extensions (Continued)
DDR3-1866 DDR3-2133
Cumulative error across 2 cycles tERR2per –88 88 -74 74 ps 17
3 cycles tERR3per –105 105 -87 87 ps 17

n = 13, 14 . . . 49, 50 tERRnper tERRnper MIN = (1 + 0.68ln[n]) × tJITper MIN 17
cycles tERRnper MAX = (1 + 0.68ln[n]) × tJITper MAX
90
ps
DQ Input Timing
tDS
Data setup time to Base (specification) 68 – 53 – ps 18, 19

DQS, DQS# @ 2 V/ns (AC135)
VREF @ 2 V/ns 135 – 120.5 – ps 19, 20

Data hold time from Base (specification) tDH 70 – 55 – ps 18, 19
DQS, DQS# @ 2 V/ns (DC100)
VREF @ 2 V/ns 120 – 105 – ps 19, 20
Minimum data pulse width tDIPW 320 – 280 – ps 41
DQ Output Timing
DQS, DQS# to DQ skew, per access tDQSQ – 85 – 75 ps

DQ output hold time from DQS, DQS# tQH 0.38 – 0.38 – tCK 21
(AVG)
DQ Low-Z time from CK, CK# tLZDQ –390 195 –360 180 ps 22, 23
DQ High-Z time from CK, CK# tHZDQ – 195 – 180 ps 22, 23
DQ Strobe Input Timing
DQS, DQS# rising to CK, CK# rising tDQSS –0.27 0.27 –0.27 0.27 CK 25
DDR3-1866 DDR3-2133
DQS, DQS# differential input low pulse width tDQSL 0.45 0.55 0.45 0.55 CK
DQS, DQS# differential input high pulse tDQSH 0.45 0.55 0.45 0.55 CK
width
DQS, DQS# falling setup to CK, CK# rising tDSS 0.18 – 0.18 – CK 25
DQS, DQS# falling hold from CK, CK# rising tDSH 0.18 – 0.18 – CK 25
DQS, DQS# differential WRITE preamble tWPRE 0.9 – 0.9 – CK
DQS, DQS# differential WRITE postamble tWPST 0.3 – 0.3 – CK
DQ Strobe Output Timing

DQS, DQS# rising to/from rising CK, CK# tDQSCK –195 195 –180 180 ps 23
DQS, DQS# rising to/from rising CK, CK# tDQSCK 1 10 1 10 ns 26
when DLL is disabled (DLL_DIS)
DQS, DQS# differential output high time tQSH 0.40 – 0.40 – CK 21
DQS, DQS# differential output low time tQSL 0.40 – 0.40 – CK 21
91
DQS, DQS# Low-Z time (RL - 1) tLZDQS –390 195 –360 180 ps 22, 23
DQS, DQS# High-Z time (RL + BL/2) tHZDQS – 195 – 180 ps 22, 23
DQS, DQS# differential READ preamble tRPRE 0.9 Note 24 0.9 Note 24 CK 23, 24
DQS, DQS# differential READ postamble tRPST 0.3 Note 27 0.3 Note 27 CK 23, 27
Command and Address Timing
DLL locking time tDLLK 512 – 512 – CK 28

CTRL, CMD, ADDR Base (specification) tIS 65 – 60 – ps 29, 30,
VREF @ 1 V/ns 200 – 195 – ps 20, 30
CTRL, CMD, ADDR Base (specification) tIS 150 – 135 – ps 29, 30,
VREF @ 1 V/ns 275 – 260 – ps 20, 30

CTRL, CMD, ADDR hold Base (specification) tIH 100 – 95 – ps 29, 30
from CK,CK# VREF @ 1 V/ns (DC100) 200 – 195 – ps 20, 30
Minimum CTRL, CMD, ADDR pulse width tIPW 535 – 470 – ps 41
ACTIVATE to internal READ or WRITE delay tRCD See Speed Bin Tables (page 74) for tRCD ns 31
PRECHARGE command period tRP See Speed Bin Tables (page 74) for tRP ns 31
ACTIVATE-to-PRECHARGE command period tRAS See Speed Bin Tables (page 74) for tRAS ns 31, 32
DDR3-1866 DDR3-2133
ACTIVATE-to-ACTIVATE command period tRC See Speed Bin Tables (page 74) for tRC ns 31, 43
ACTIVATE-to-ACTIVATE 1KB page size tRRD MIN = greater of 4CK or 5ns CK 31
minimum command pe- 2KB page size MIN = greater of 4CK or 6ns CK 31
riod
Four ACTIVATE 1KB page size tFAW 27 – 25 – ns 31
windows 2KB page size 35 – 35 – ns 31
Write recovery time tWR MIN = 15ns; MAX = n/a ns 31, 32,
33

Delay from start of internal WRITE transac- tWTR MIN = greater of 4CK or 7.5ns; MAX = n/a CK 31, 34
tion to internal READ command
READ-to-PRECHARGE time tRTP MIN = greater of 4CK or 7.5ns; MAX = n/a CK 31, 32
CAS#-to-CAS# command delay tCCD MIN = 4CK; MAX = n/a CK
Auto precharge write recovery + precharge tDAL MIN = WR + tRP/tCK (AVG); MAX = n/a CK
time
92
MODE REGISTER SET command cycle time tMRD MIN = 4CK; MAX = n/a CK
MODE REGISTER SET command update delay tMOD MIN = greater of 12CK or 15ns; MAX = n/a CK
MULTIPURPOSE REGISTER READ burst end to tMPRR MIN = 1CK; MAX = n/a CK
mode register set for multipurpose register

exit

Calibration Timing
ZQCL command: Long POWER-UP and RE- tZQinit MIN = n/a CK
calibration time SET operation MAX = max(512nCK, 640ns)
Normal operation tZQoper MIN = n/a CK
MAX = max(256nCK, 320ns)
ZQCS command: Short calibration time MIN = n/a CK

MAX = max(64nCK, 80ns) tZQCS
Initialization and Reset Timing
Exit reset from CKE HIGH to a valid command tXPR MIN = greater of 5CK or tRFC + 10ns; MAX = n/a CK
Begin power supply ramp to power supplies tVDDPR MIN = n/a; MAX = 200 ms
stable
RESET# LOW to power supplies stable tRPS MIN = 0; MAX = 200 ms
RESET# LOW to I/O and RTT High-Z tIOZ MIN = n/a; MAX = 20 ns 35
DDR3-1866 DDR3-2133
Refresh Timing
REFRESH-to-ACTIVATE or REFRESH tRFC – 1Gb MIN = 110; MAX = 70,200 ns
command period tRFC – 2Gb MIN = 160; MAX = 70,200 ns
tRFC – 4Gb MIN = 260; MAX = 70,200 ns
tRFC – 8Gb MIN = 350; MAX = 70,200 ns
Maximum refresh TC ≤ 85°C – 64 (1X) ms 36
period TC > 85°C 32 (2X) ms 36
Maximum average TC ≤ 85°C tREFI 7.8 (64ms/8192) μs 36

periodic refresh TC > 85°C 3.9 (32ms/8192) μs 36
Self Refresh Timing
Exit self refresh to commands not requiring a tXS MIN = greater of 5CK or tRFC + 10ns; MAX = n/a CK
locked DLL
Exit self refresh to commands requiring a tXSDLL MIN = tDLLK (MIN); CK 28
93
locked DLL MAX = n/a

Minimum CKE low pulse width for self re- tCKESR MIN = tCKE (MIN) + CK; MAX = n/a CK
fresh entry to self refresh exit timing
tCKSRE
Valid clocks after self refresh entry or power- MIN = greater of 5CK or 10ns; MAX = n/a CK
down entry
Valid clocks before self refresh exit, tCKSRX MIN = greater of 5CK or 10ns; MAX = n/a CK

power-down exit, or reset exit
Power-Down Timing
CKE MIN pulse width tCKE (MIN) Greater of 3CK or 5ns CK
Command pass disable delay tCPDED MIN = 2; CK
MAX = n/a
Power-down entry to power-down exit tim- tPD MIN = tCKE (MIN); CK

ing MAX = 9 * tREFI
Begin power-down period prior to CKE tANPD WL - 1CK CK
registered HIGH
Power-down entry period: ODT either PDE Greater of tANPD or tRFC - REFRESH command to CKE LOW time CK
Power-down exit period: ODT either PDX tANPD + tXPDLL CK
DDR3-1866 DDR3-2133
Power-Down Entry Minimum Timing
ACTIVATE command to power-down entry tACTPDEN MIN = 2 CK
PRECHARGE/PRECHARGE ALL command to tPRPDEN MIN = 2 CK
power-down entry
REFRESH command to power-down entry tREFPDEN MIN = 2 CK 37
MRS command to power-down entry tMRSPDEN MIN = tMOD (MIN) CK
READ/READ with auto precharge command tRDPDEN MIN = RL + 4 + 1 CK
to power-down entry

WRITE command to BL8 (OTF, MRS) tWRPDEN MIN = WL + 4 + CK
power-down entry BC4OTF tWR/tCK (AVG)
BC4MRS tWRPDEN MIN = WL + 2 + CK

tWR/tCK (AVG)
WRITE with auto pre- BL8 (OTF, MRS) tWRAP- MIN = WL + 4 + WR + 1 CK

charge command to BC4OTF DEN
94
power-down entry BC4MRS tWRAP- MIN = WL + 2 + WR + 1 CK

DEN
Power-Down Exit Timing
DLL on, any valid command, or DLL off to tXP MIN = greater of 3CK or 6ns; CK
commands not requiring locked DLL MAX = n/a
tXPDLL

Precharge power-down with DLL off to MIN = greater of 10CK or 24ns; MAX = n/a CK 28
commands requiring a locked DLL
ODT Timing
RTT synchronous turn-on delay ODTL on CWL + AL - 2CK CK 38
RTT synchronous turn-off delay ODTL off CWL + AL - 2CK CK 40
RTT turn-on from ODTL on reference tAON –195 195 –180 180 ps 23, 38
RTT turn-off from ODTL off reference tAOF 0.3 0.7 0.3 0.7 CK 39, 40
Asynchronous RTT turn-on delay tAONPD MIN = 2; MAX = 8.5 ns 38
Asynchronous RTT turn-off delay tAOFPD MIN = 2; MAX = 8.5 ns 40
ODT HIGH time with WRITE command and ODTH8 MIN = 6; MAX = n/a CK
BL8
DDR3-1866 DDR3-2133
ODT HIGH time without WRITE command or ODTH4 MIN = 4; MAX = n/a CK
with WRITE command and BC4
Dynamic ODT Timing
RTT,nom-to-RTT(WR) change skew ODTLcnw WL - 2CK CK
RTT(WR)-to-RTT,nom change skew - BC4 ODTLcwn4 4CK + ODTLoff CK
RTT(WR)-to-RTT,nom change skew - BL8 ODTLcwn8 6CK + ODTLoff CK
RTT dynamic change skew tADC 0.3 0.7 0.3 0.7 CK 39
Write Leveling Timing

First DQS, DQS# rising edge tWLMRD 40 – 40 – CK
DQS, DQS# delay tWLDQSEN 25 – 25 – CK
Write leveling setup from rising CK, CK# tWLS 140 – 125 – ps
crossing to rising DQS, DQS# crossing
Write leveling hold from rising DQS, DQS# tWLH 140 – 125 – ps
95
crossing to rising CK, CK# crossing

Write leveling output delay tWLO 0 7.5 0 7 ns
Write leveling output error tWLOE 0 2 0 2 ns

Notes: 1. AC timing parameters are valid from specified TC MIN to TC MAX values.
2. All voltages are referenced to VSS.
3. Output timings are only valid for RON34 output buffer selection.
4. The unit tCK (AVG) represents the actual tCK (AVG) of the input clock under operation.
The unit CK represents one clock cycle of the input clock, counting the actual clock
edges.
5. AC timing and IDD tests may use a VIL-to-VIH swing of up to 900mV in the test environ-
ment, but input timing is still referenced to VREF (except tIS, tIH, tDS, and tDH use the
AC/DC trip points and CK, CK# and DQS, DQS# use their crossing points). The minimum
slew rate for the input signals used to test the device is 1 V/ns for single-ended inputs
(DQs are at 2V/ns for DDR3-1866 and DDR3-2133) and 2 V/ns for differential inputs in
the range between VIL(AC) and VIH(AC).
6. All timings that use time-based values (ns, μs, ms) should use tCK (AVG) to determine the
correct number of clocks (Table 57 (page 89) uses CK or tCK [AVG] interchangeably). In
the case of noninteger results, all minimum limits are to be rounded up to the nearest
whole integer, and all maximum limits are to be rounded down to the nearest whole
integer.
7. Strobe or DQSdiff refers to the DQS and DQS# differential crossing point when DQS is
the rising edge. Clock or CK refers to the CK and CK# differential crossing point when
CK is the rising edge.
8. This output load is used for all AC timing (except ODT reference timing) and slew rates.
The actual test load may be different. The output signal voltage reference point is
VDDQ/2 for single-ended signals and the crossing point for differential signals (see Figure
29 (page 71)).
9. When operating in DLL disable mode, Micron does not warrant compliance with normal
mode timings or functionality.
10. The clock’s tCK (AVG) is the average clock over any 200 consecutive clocks and tCK (AVG)
MIN is the smallest clock rate allowed, with the exception of a deviation due to clock
jitter. Input clock jitter is allowed provided it does not exceed values specified and must
be of a random Gaussian distribution in nature.
11. Spread spectrum is not included in the jitter specification values. However, the input
clock can accommodate spread-spectrum at a sweep rate in the range of 20–60 kHz with
an additional 1% of tCK (AVG) as a long-term jitter component; however, the spread
spectrum may not use a clock rate below tCK (AVG) MIN.
12. The clock’s tCH (AVG) and tCL (AVG) are the average half clock period over any 200 con-
secutive clocks and is the smallest clock half period allowed, with the exception of a de-
viation due to clock jitter. Input clock jitter is allowed provided it does not exceed values
specified and must be of a random Gaussian distribution in nature.
13. The period jitter (tJITper) is the maximum deviation in the clock period from the average
or nominal clock. It is allowed in either the positive or negative direction.
14. tCH (ABS) is the absolute instantaneous clock high pulse width as measured from one
rising edge to the following falling edge.

15. tCL (ABS) is the absolute instantaneous clock low pulse width as measured from one fall-
ing edge to the following rising edge.

16. The cycle-to-cycle jitter tJITcc is the amount the clock period can deviate from one cycle
to the next. It is important to keep cycle-to-cycle jitter at a minimum during the DLL
locking time.
17. The cumulative jitter error tERRnper, where n is the number of clocks between 2 and 50,
is the amount of clock time allowed to accumulate consecutively away from the average
clock over n number of clock cycles.
18. tDS (base) and tDH (base) values are for a single-ended 1 V/ns slew rate DQs (DQs are at
2V/ns for DDR3-1866 and DDR3-2133) and 2 V/ns slew rate differential DQS, DQS#.
19. These parameters are measured from a data signal (DM, DQ0, DQ1, and so forth) transi-
tion edge to its respective data strobe signal (DQS, DQS#) crossing.
20. The setup and hold times are listed converting the base specification values (to which
derating tables apply) to VREF when the slew rate is 1 V/ns (DQs are at 2V/ns for
DDR3-1866 and DDR3-2133). These values, with a slew rate of 1 V/ns (DQs are at 2V/ns
for DDR3-1866 and DDR3-2133), are for reference only.
21. When the device is operated with input clock jitter, this parameter needs to be derated
by the actual tJITper (larger of tJITper (MIN) or tJITper (MAX) of the input clock (output
deratings are relative to the SDRAM input clock).
22. Single-ended signal parameter.
23. The DRAM output timing is aligned to the nominal or average clock. Most output pa-
rameters must be derated by the actual jitter error when input clock jitter is present,
even when within specification. This results in each parameter becoming larger. The fol-
lowing parameters are required to be derated by subtracting tERR10per (MAX): tDQSCK
(MIN), tLZDQS (MIN), tLZDQ (MIN), and tAON (MIN). The following parameters are re-
quired to be derated by subtracting tERR10per (MIN): tDQSCK (MAX), tHZ (MAX), tLZDQS
(MAX), tLZDQ (MAX), and tAON (MAX). The parameter tRPRE (MIN) is derated by sub-
tracting tJITper (MAX), while tRPRE (MAX) is derated by subtracting tJITper (MIN).
24. The maximum preamble is bound by tLZDQS (MAX).
25. These parameters are measured from a data strobe signal (DQS, DQS#) crossing to its re-
spective clock signal (CK, CK#) crossing. The specification values are not affected by the
amount of clock jitter applied, as these are relative to the clock signal crossing. These
parameters should be met whether clock jitter is present.
26. The tDQSCK (DLL_DIS) parameter begins CL + AL - 1 cycles after the READ command.
27. The maximum postamble is bound by tHZDQS (MAX).
28. Commands requiring a locked DLL are: READ (and RDAP) and synchronous ODT com-
mands. In addition, after any change of latency tXPDLL, timing must be met.
29. tIS (base) and tIH (base) values are for a single-ended 1 V/ns control/command/address
slew rate and 2 V/ns CK, CK# differential slew rate.
30. These parameters are measured from a command/address signal transition edge to its
respective clock (CK, CK#) signal crossing. The specification values are not affected by
the amount of clock jitter applied as the setup and hold times are relative to the clock
signal crossing that latches the command/address. These parameters should be met
whether clock jitter is present.
31. For these parameters, the DDR3 SDRAM device supports tnPARAM (nCK) = RU(tPARAM
[ns]/tCK[AVG] [ns]), assuming all input clock jitter specifications are satisfied. For exam-
ple, the device will support tnRP (nCK) = RU(tRP/tCK[AVG]) if all input clock jitter specifi-
cations are met. This means that for DDR3-800 6-6-6, of which tRP = 5ns, the device will
support tnRP = RU(tRP/tCK[AVG]) = 6 as long as the input clock jitter specifications are
met. That is, the PRECHARGE command at T0 and the ACTIVATE command at T0 + 6 are
valid even if six clocks are less than 15ns due to input clock jitter.
32. During READs and WRITEs with auto precharge, the DDR3 SDRAM will hold off the in-
ternal PRECHARGE command until tRAS (MIN) has been satisfied.
33. When operating in DLL disable mode, the greater of 5CK or 15ns is satisfied for tWR.
34. The start of the write recovery time is defined as follows:
• For BL8 (fixed by MRS or OTF): Rising clock edge four clock cycles after WL
• For BC4 (OTF): Rising clock edge four clock cycles after WL
• For BC4 (fixed by MRS): Rising clock edge two clock cycles after WL
35. RESET# should be LOW as soon as power starts to ramp to ensure the outputs are in
High-Z. Until RESET# is LOW, the outputs are at risk of driving and could result in exces-
sive current, depending on bus activity.
36. The refresh period is 64ms when TC is less than or equal to 85°C. This equates to an aver-
age refresh rate of 7.8125μs. However, nine REFRESH commands should be asserted at
least once every 70.3μs. When TC is greater than 85°C, the refresh period is 32ms.
37. Although CKE is allowed to be registered LOW after a REFRESH command when
tREFPDEN (MIN) is satisfied, there are cases where additional time such as tXPDLL (MIN)
is required.
38. ODT turn-on time MIN is when the device leaves High-Z and ODT resistance begins to
turn on. ODT turn-on time maximum is when the ODT resistance is fully on. The ODT
reference load is shown in Figure 21 (page 57). Designs that were created prior to JEDEC
tightening the maximum limit from 9ns to 8.5ns will be allowed to have a 9ns maxi-
mum.
39. Half-clock output parameters must be derated by the actual tERR10per and tJITdty when
input clock jitter is present. This results in each parameter becoming larger. The parame-
ters tADC (MIN) and tAOF (MIN) are each required to be derated by subtracting both
tERR10per (MAX) and tJITdty (MAX). The parameters tADC (MAX) and tAOF (MAX) are
required to be derated by subtracting both tERR10per (MAX) and tJITdty (MAX).

40. ODT turn-off time minimum is when the device starts to turn off ODT resistance. ODT
turn-off time maximum is when the DRAM buffer is in High-Z. The ODT reference load is
shown in Figure 22 (page 60). This output load is used for ODT timings (see Figure 29
(page 71)).
41. Pulse width of a input signal is defined as the width between the first crossing of
VREF(DC) and the consecutive crossing of VREF(DC).
42. Should the clock rate be larger than tRFC (MIN), an AUTO REFRESH command should
have at least one NOP command between it and another AUTO REFRESH command. Ad-
ditionally, if the clock rate is slower than 40ns (25 MHz), all REFRESH commands should
be followed by a PRECHARGE ALL command.
43. DRAM devices should be evenly addressed when being accessed. Disproportionate ac-
cesses to a particular row address may result in a reduction of REFRESH characteristics or
product lifetime.
Command and Address Setup, Hold, and Derating

The total tIS (setup time) and tIH (hold time) required is calculated by adding the data
sheet tIS (base) and tIH (base) values (see Table 58; values come from Table 56 (page
79)) to the ΔtIS and ΔtIH derating values (see Table 59 (page 100) and Table 60 (page
100)), respectively. Example: tIS (total setup time) = tIS (base) + ΔtIS. For a valid transi-
tion, the input signal has to remain above/below V IH(AC)/VIL(AC) for some time tVAC (see
Table 60 (page 100)).
Although the total setup time for slow slew rates might be negative (for example, a valid
input signal will not have reached V IH(AC)/VIL(AC) at the time of the rising clock transi-
tion), a valid input signal is still required to complete the transition and to reach
VIH(AC)/VIL(AC) (see Figure 13 (page 49) for input signal requirements). For slew rates that
fall between the values listed in Table 60 (page 100) and Table 63 (page 102), the derat-
ing values may be obtained by linear interpolation.
Setup (tIS) nominal slew rate for a rising signal is defined as the slew rate between the
last crossing of V REF(DC) and the first crossing of V IH(AC)min. Setup (tIS) nominal slew rate
for a falling signal is defined as the slew rate between the last crossing of V REF(DC) and
the first crossing of V IL(AC)max. If the actual signal is always earlier than the nominal slew
rate line between the shaded V REF(DC)-to-AC region, use the nominal slew rate for derat-
ing value (see Figure 32 (page 103)). If the actual signal is later than the nominal slew
rate line anywhere between the shaded V REF(DC)-to-AC region, the slew rate of a tangent
line to the actual signal from the AC level to the DC level is used for derating value (see
Figure 34 (page 105)).
Hold (tIH) nominal slew rate for a rising signal is defined as the slew rate between the
last crossing of V IL(DC)max and the first crossing of V REF(DC). Hold (tIH) nominal slew rate
for a falling signal is defined as the slew rate between the last crossing of V IH(DC)min and
the first crossing of V REF(DC). If the actual signal is always later than the nominal slew
rate line between the shaded DC-to-VREF(DC) region, use the nominal slew rate for derat-
ing value (see Figure 33 (page 104)). If the actual signal is earlier than the nominal slew
rate line anywhere between the shaded DC-to-VREF(DC) region, the slew rate of a tangent
line to the actual signal from the DC level to the V REF(DC) level is used for derating value
(see Figure 35 (page 106)).
Table 58: Command and Address Setup and Hold Values Referenced – AC/DC-Based
Symbol 800 1066 1333 1600 1866 2133 Unit Reference

tIS(base, AC175) 200 125 65 45 – – ps VIH(AC)/VIL(AC)
tIS(base, AC150) 350 275 190 170 – – ps VIH(AC)/VIL(AC)
tIS(base, AC135) – – – – 65 60 ps VIH(AC)/VIL(AC)
tIS(base, AC125) – – – – 150 135 ps VIH(AC)/VIL(AC)
tIH(base, DC100) 275 200 140 120 100 95 ps VIH(DC)/VIL(DC)
Table 59: Derating Values for tIS/tIH – AC175/DC100-Based
ΔtIS, ΔtIH Derating (ps) – AC/DC-Based

AC175 Threshold: VIH(AC) = VREF(DC) + 175mV, VIL(AC) = VREF(DC) - 175mV
CMD/ CK, CK# Differential Slew Rate
ADDR 4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns
Slew Rate
V/ns ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIH ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH
2.0 88 50 88 50 88 50 96 58 104 66 112 74 120 84 128 100
1.5 59 34 59 34 59 34 67 42 75 50 83 58 91 68 99 84
1.0 0 0 0 0 0 0 8 8 16 16 24 24 32 34 40 50
0.9 –2 –4 –2 –4 –2 –4 6 4 14 12 22 20 30 30 38 46
0.8 –6 –10 –6 –10 –6 –10 2 –2 10 6 18 14 26 24 34 40
0.7 –11 –16 –11 –16 –11 –16 –3 –8 5 0 13 8 21 18 29 34
0.6 –17 –26 –17 –26 –17 –26 –9 –18 –1 –10 7 –2 15 8 23 24
0.5 –35 –40 –35 –40 –35 –40 –27 –32 –19 –24 –11 –16 –2 –6 5 10
0.4 –62 –60 –62 –60 –62 –60 –54 –52 –46 –44 –38 –36 –30 –26 –22 –10

Slew Rate
2.0 75 50 75 50 75 50 83 58 91 66 99 74 107 84 115 100
1.5 50 34 50 34 50 34 58 42 66 50 74 58 82 68 90 84
1.0 0 0 0 0 0 0 8 8 16 16 24 24 32 34 40 50
0.9 0 –4 0 –4 0 –4 8 4 16 12 24 20 32 30 40 46
0.8 0 –10 0 –10 0 –10 8 –2 16 6 24 14 32 24 40 40
0.7 0 –16 0 –16 0 –16 8 –8 16 0 24 8 32 18 40 34
0.6 –1 –26 –1 –26 –1 –26 7 –18 15 –10 23 –2 31 8 39 24
0.5 –10 –40 –10 –40 –10 –40 –2 –32 6 –24 14 –16 22 –6 30 10
0.4 –25 –60 –25 –60 –25 –60 –17 –52 –9 –44 –1 –36 7 –26 15 –10

Slew Rate
2.0 68 50 68 50 68 50 76 58 84 66 92 74 100 84 108 100
1.5 45 34 45 34 45 34 53 42 61 50 69 58 77 68 85 84
1.0 0 0 0 0 0 0 8 8 16 16 24 24 32 34 40 50
0.9 2 –4 2 –4 2 –4 10 4 18 12 26 20 34 30 42 46
0.8 3 –10 3 –10 3 –10 11 –2 19 6 27 14 35 24 43 40
0.7 6 –16 6 –16 6 –16 14 –8 22 0 30 8 38 18 46 34
0.6 9 –26 9 –26 9 –26 17 –18 25 –10 33 –2 41 8 49 24
0.5 5 –40 5 –40 5 –40 13 –32 21 –24 29 –16 37 –6 45 10
0.4 –3 –60 –3 –60 –3 –60 6 –52 14 –44 22 –36 30 –26 38 –10

Slew Rate
2.0 63 50 63 50 63 50 71 58 79 66 87 74 95 84 103 100
1.5 42 34 42 34 42 34 50 42 58 50 66 58 74 68 82 84
1.0 0 0 0 0 0 0 8 8 16 16 24 24 32 34 40 50
0.9 4 –4 4 –4 4 –4 12 4 20 12 28 20 36 30 44 46
0.8 6 –10 6 –10 6 –10 14 –2 22 6 30 14 38 24 45 40
0.7 11 –16 11 –16 11 –16 19 –8 27 0 35 8 43 18 51 34
0.6 16 –26 16 –26 16 –26 24 –18 32 –10 40 –2 48 8 56 24
0.5 15 –40 15 –40 15 –40 23 –32 31 –24 39 –16 47 –6 55 10
0.4 13 –60 13 –60 13 –60 21 –52 29 –44 37 –36 45 –26 53 –10
Table 63: Minimum Required Time tVAC Above VIH(AC) or Below VIL(AC)for Valid Transition
Slew Rate (V/ns) tVAC at 175mV (ps) tVAC at 150mV (ps) tVAC at 135mV (ps) tVAC at 125mV (ps)
>2.0 75 175 168 173
2.0 57 170 168 173
1.5 50 167 145 152
1.0 38 130 100 110
0.9 34 113 85 96
0.8 29 93 66 79
0.7 22 66 42 56
0.6 Note 1 30 10 27
0.5 Note 1 Note 1 Note 1 Note 1
<0.5 Note 1 Note 1 Note 1 Note 1
Note: 1. Rising input signal shall become equal to or greater than VIH(ac) level and Falling input
signal shall become equal to or less than VIL(ac) level.
Figure 32: Nominal Slew Rate and tVAC for tIS (Command and Address – Clock)
tIS tIH tIS tIH
CK
CK#
DQS#
DQS
VDDQ
tVAC
VIH(AC)min
VREF to AC
region
VIH(DC)min
Nominal
slew rate
VREF(DC)
Nominal
slew rate
VIL(DC)max
VREF to AC
region
VIL(AC)max
tVAC
VSS
∆TF ∆TR
Setup slew rate VREF(DC) - VIL(AC)max Setup slew rate VIH(AC)min - VREF(DC)
falling signal = rising signal =
∆TF ∆TR
Note: 1. The clock and the strobe are drawn on different time scales.
Figure 33: Nominal Slew Rate for tIH (Command and Address – Clock)
tIS tIH tIS tIH
CK
CK#
DQS#
DQS
VDDQ
VIH(AC)min
VIH(DC)min
DC to VREF Nominal
region slew rate
VREF(DC)
Nominal DC to VREF
slew rate region
VIL(DC)max
VIL(AC)max
VSS
ΔTR ΔTF
Hold slew rate VREF(DC) - VIL(DC)max Hold slew rate VIH(DC)min - VREF(DC)
rising signal =
ΔTR falling signal = ΔTF
Figure 34: Tangent Line for tIS (Command and Address – Clock)
tIS tIH tIS tIH
CK
CK#
DQS#
DQS
VDDQ
tVAC
Nominal
line
VIH(AC)min
VREF to AC
region
VIH(DC)min
Tangent
line
VREF(DC)
Tangent
line
VIL(DC)max
VREF to AC
region
VIL(AC)max
Nominal
line
tVAC ∆TR
VSS
Setup slew rate Tangent line (VIH(DC)min - VREF(DC))

rising signal =
∆TR
∆TF
Setup slew rate Tangent line (VREF(DC) - VIL(AC)max)
falling signal =
∆TF
Figure 35: Tangent Line for tIH (Command and Address – Clock)
tIS tIH tIS tIH
CK
CK#
DQS#
DQS
VDDQ
VIH(AC)min
Nominal
line
VIH(DC)min
DC to VREF
region Tangen t
line
VREF(DC)
Tangen t
DC to VREF line
region
Nominal
line
VIL( DC)max
VIL( AC)max
VSS
ΔTR ΔTR
Hold slew rate Tangent line (VREF(DC) - VIL(DC)max)

rising signal =
ΔTR
Hold slew rate Tangent line (VIH(DC)min - VREF(DC))

falling signal =
ΔTF
Data Setup, Hold, and Derating

The total tDS (setup time) and tDH (hold time) required is calculated by adding the data
sheet tDS (base) and tDH (base) values (see Table 64 (page 107); values come from Ta-
ble 56 (page 79)) to the ΔtDS and ΔtDH derating values (see Table 65 (page 108)), re-
spectively. Example: tDS (total setup time) = tDS (base) + ΔtDS. For a valid transition, the
input signal has to remain above/below V IH(AC)/VIL(AC) for some time tVAC (see Table 69
(page 111)).
Although the total setup time for slow slew rates might be negative (for example, a valid
input signal will not have reached V IH(AC)/VIL(AC)) at the time of the rising clock transi-
tion), a valid input signal is still required to complete the transition and to reach
VIH/VIL(AC). For slew rates that fall between the values listed in Table 66 (page 108), the
derating values may obtained by linear interpolation.
Setup (tDS) nominal slew rate for a rising signal is defined as the slew rate between the
last crossing of V REF(DC) and the first crossing of V IH(AC)min. Setup (tDS) nominal slew
rate for a falling signal is defined as the slew rate between the last crossing of V REF(DC)
and the first crossing of V IL(AC)max. If the actual signal is always earlier than the nominal
slew rate line between the shaded V REF(DC)-to-AC region, use the nominal slew rate for
derating value (see Figure 36 (page 112)). If the actual signal is later than the nominal
slew rate line anywhere between the shaded V REF(DC)-to-AC region, the slew rate of a
tangent line to the actual signal from the AC level to the DC level is used for derating
value (see Figure 38 (page 114)).
Hold (tDH) nominal slew rate for a rising signal is defined as the slew rate between the
last crossing of V IL(DC)max and the first crossing of V REF(DC). Hold (tDH) nominal slew
rate for a falling signal is defined as the slew rate between the last crossing of V IH(DC)min
and the first crossing of V REF(DC). If the actual signal is always later than the nominal
slew rate line between the shaded DC-to-VREF(DC) region, use the nominal slew rate for
derating value (see Figure 37 (page 113)). If the actual signal is earlier than the nominal
slew rate line anywhere between the shaded DC-to-VREF(DC) region, the slew rate of a
tangent line to the actual signal from the DC-to-VREF(DC) region is used for derating val-
ue (see Figure 39 (page 115)).
Table 64: DDR3 Data Setup and Hold Values at 1 V/ns (DQS, DQS# at 2 V/ns) – AC/DC-Based
Symbol 800 1066 1333 1600 1866 2133 Unit Reference

tDS (base) AC175 75 25 – – – – ps VIH(AC)/VIL(AC)
tDS (base) AC150 125 75 30 10 – – ps VIH(AC)/VIL(AC)
tDS (base) AC135 165 115 60 40 68 53 ps VIH(AC)/VIL(AC)
tDH (base) DC100 150 100 65 45 70 55 ps VIH(DC)/VIL(DC)
Slew Rate Referenced 1 1 1 1 2 2 V/ns
Table 65: Derating Values for tDS/tDH – AC175/DC100-Based

Shaded cells indicate slew rate combinations not supported
ΔtDS, ΔtDH Derating (ps) – AC/DC-Based
DQS, DQS# Differential Slew Rate
DQ Slew 4.0 V/ns 3.0 V/ns

1.8 V/ns 2.0 V/ns
1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns
Rate V/ns Δ DS Δ DH Δ DS Δ DH Δ DS Δ DH Δ DS Δ DH Δ DS Δ DH Δ DS Δ DH Δ DS Δ DH Δ DS ΔtDH
t t t t t t t t t t t t t t t
2.0 88 50 88 50 88 50
1.5 59 34 59 34 59 34 67 42
1.0 0 0 0 0 0 0 8 8 16 16
0.9 –2 –4 –2 –4 6 4 14 12 22 20
0.8 –6 –10 2 –2 10 6 18 14 26 24
0.7 –3 –8 5 0 13 8 21 18 29 34
0.6 –1 –10 7 –2 15 8 23 24
0.5 –11 –16 –2 –6 5 10
0.4 –30 –26 –22 –10
Table 66: Derating Values for tDS/tDH – AC150/DC100-Based

DQ Slew 4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns
Rate V/ns ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH
2.0 75 50 75 50 75 50
1.5 50 34 50 34 50 34 58 42
1.0 0 0 0 0 0 0 8 8 16 16
0.9 0 –4 0 –4 8 4 16 12 24 20
0.8 0 –10 8 –2 16 6 24 14 32 24
0.7 8 –8 16 0 24 8 32 18 40 34
0.6 15 –10 23 –2 31 8 39 24
0.5 14 –16 22 –6 30 10
0.4 7 –26 15 –10
Table 67: Derating Values for tDS/tDH – AC135/DC100-Based at 1V/ns

DQ Slew 4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns
Rate V/ns ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH
2.0 68 50 68 50 68 50
1.5 45 34 45 34 45 34 53 42
1.0 0 0 0 0 0 0 8 8 16 16
0.9 2 –4 2 –4 10 4 18 12 26 20
0.8 3 –10 11 –2 19 6 27 14 35 24
0.7 14 –8 22 0 30 8 38 18 46 34
0.6 25 –19 33 –2 41 8 49 24
0.5 29 –16 37 –6 45 –10
0.4 30 26 38 –10
Table 68: Derating Values for tDS/tDH – AC135/DC100-Based at 2V/ns

DQ Slew Rate V/ns ΔtDS, ΔtDH Derating (ps) – AC/DC-Based
8.0 V/ns 7.0 V/ns 6.0 V/ns 5.0 V/ns 4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns
Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ
tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH
4.0 34 25 34 25 34 25
3.5 29 21 29 21 29 21 29 21
3.0 23 17 23 17 23 17 23 17 23 17
2.5 14 10 14 10 14 10 14 10 14 10
2.0 0 0 0 0 0 0 0 0 0 0
1.5 –23 –17 –23 –17 –23 –17 –23 –17 –15 –19
1.0 –68 –50 –68 –50 –68 –50 –60 –42 –52 –34
0.9 –66 –54 –66 –54 –58 –46 –50 –38 –42 –30
110
0.8 –64 60 –56 –52 –48 –40 –40 –36 –32 –26
0.7 –53 –59 –45 –51 –37 –43 –29 –33 –21 –17
0.6 –43 –61 –35 –53 –27 –43 –19 –27
0.5 –39 –66 –31 –56 –23 –40

0.4 –38 –76 –30 –60

Table 69: Required Minimum Time tVAC Above VIH(AC) (Below VIL(AC)) for Valid DQ Transition
Slew tVAC at 175mV (ps) tVAC at 150mV (ps) tVAC at 135mV (ps)
Rate
(V/ns) DDR3-800/1066 DDR3-800/1066/1333/1600 DDR3-800/1066/1333/1600 DDR3-1866 DDR3-2133
>2.0 75 105 113 93 73
2.0 57 105 113 93 73
1.5 50 80 90 70 50
1.0 38 30 45 25 5
0.9 34 13 30 Note 1 Note 1
0.8 29 Note 1 11 Note 1 Note 1
0.7 Note 1 Note 1 Note 1 Note 1 Note 1
<0.5 Note 1 Note 1 Note 1 Note 1 Note 1
Note: 1. Rising input signal shall become equal to or greater than VIH(ac) level and Falling input
signal shall become equal to or less than VIL(ac) level.
Figure 36: Nominal Slew Rate and tVAC for tDS (DQ – Strobe)
CK
CK#
DQS#
DQS
tDS tDH tDS tDH
VDDQ
tVAC
VIH(AC)min
VREF to AC
region
VIH(DC)min
Nominal
slew rate
VREF(DC)
Nominal
slew rate
VIL(DC)max
VREF to AC
region
VIL(AC)max
tVAC
VSS
ΔTF ΔTR
Setup slew rate VREF(DC) - VIL(AC)max Setup slew rate VIH(AC)min - VREF(DC)
falling signal = rising signal =
ΔTF ΔTR
Figure 37: Nominal Slew Rate for tDH (DQ – Strobe)

CK
CK#
DQS#
DQS
tDS tDH tDS tDH
VDDQ
VIH(AC)min
VIH(DC)min
Nominal
DC to VREF slew rate
region
VREF(DC)
Nominal
slew rate
DC to VREF
region
VIL(DC)max
VIL(AC)max
VSS
ΔTR ΔTF
Hold slew rate VREF(DC) - VIL(DC)max Hold slew rate VIL(DC)min - VREF(DC)
rising signal = falling signal =
ΔTR ΔTF
Figure 38: Tangent Line for tDS (DQ – Strobe)

CK
CK#
DQS#
DQS
tDS tDH tDS tDH
VDDQ
tVAC
Nominal
line
VIH(AC)min
VREF to AC
region
VIH(DC)min
Tangent
line
VREF(DC)
Tangent
line
VIL(DC)max
VREF to AC
region
VIL(AC)max
Nominal
line
tVAC ΔTR
VSS
Setup slew rate Tangent line (VIH(AC)min - VREF(DC))

rising signal =
ΔTR
ΔTF Setup slew rate Tangent line (VREF(DC) - VIL(AC)max)

falling signal =
ΔTF
Figure 39: Tangent Line for tDH (DQ – Strobe)

CK
CK#
DQS#
DQS
tDS tDH tDS tDH
VDDQ
VIH(AC)min
Nominal
line
VIH(DC)min
DC to VREF
region Tangent
line
VREF(DC)
Tangent Nominal
DC to VREF
line line
region
VIL(DC)max
VIL(AC)max
VSS
ΔTR ΔTF
Hold slew rate Tangent line (VREF(DC) - VIL(DC)max)

rising signal = ΔTR
Hold slew rate Tangent line (VIH(DC)min - VREF(DC))

falling signal =
ΔTF
Commands – Truth Tables
Table 70: Truth Table – Command

CKE
Prev. Next BA A[11,
Function Symbol Cycle Cycle CS# RAS# CAS# WE# [2:0] An A12 A10 9:0] Notes
MODE REGISTER SET MRS H H L L L L BA OP code
REFRESH REF H H L L L H V V V V V
Self refresh entry SRE H L L L L H V V V V V 6
Self refresh exit SRX L H H V V V V V V V V 6, 7
L H H H
Single-bank PRECHARGE PRE H H L L H L BA V V L V
PRECHARGE all banks PREA H H L L H L V V H V
Bank ACTIVATE ACT H H L L H H BA Row address (RA)
WRITE BL8MRS, WR H H L H L L BA RFU V L CA 8
BC4MRS
BC4OTF WRS4 H H L H L L BA RFU L L CA 8
BL8OTF WRS8 H H L H L L BA RFU H L CA 8
WRITE BL8MRS, WRAP H H L H L L BA RFU V H CA 8
with auto BC4MRS
precharge BC4OTF WRAPS4 H H L H L L BA RFU L H CA 8
BL8OTF WRAPS8 H H L H L L BA RFU H H CA 8
READ BL8MRS, RD H H L H L H BA RFU V L CA 8
BC4MRS
BC4OTF RDS4 H H L H L H BA RFU L L CA 8
BL8OTF RDS8 H H L H L H BA RFU H L CA 8
READ BL8MRS, RDAP H H L H L H BA RFU V H CA 8
with auto BC4MRS
precharge BC4OTF RDAPS4 H H L H L H BA RFU L H CA 8
BL8OTF RDAPS8 H H L H L H BA RFU H H CA 8
NO OPERATION NOP H H L H H H V V V V V 9
Device DESELECTED DES H H H X X X X X X X X 10
Power-down entry PDE H L L H H H V V V V V 6
H V V V
Power-down exit PDX L H L H H H V V V V V 6, 11
H V V V
ZQ CALIBRATION LONG ZQCL H H L H H L X X X H X 12
ZQ CALIBRATION SHORT ZQCS H H L H H L X X X L X
Notes: 1. Commands are defined by the states of CS#, RAS#, CAS#, WE#, and CKE at the rising
edge of the clock. The MSB of BA, RA, and CA are device-, density-, and configuration-
dependent.
2. RESET# is enabled LOW and used only for asynchronous reset. Thus, RESET# must be
held HIGH during any normal operation.
3. The state of ODT does not affect the states described in this table.
4. Operations apply to the bank defined by the bank address. For MRS, BA selects one of
four mode registers.
5. “V” means “H” or “L” (a defined logic level), and “X” means “Don’t Care.”
6. See Table 71 (page 118) for additional information on CKE transition.
7. Self refresh exit is asynchronous.
8. Burst READs or WRITEs cannot be terminated or interrupted. MRS (fixed) and OTF BL/BC
are defined in MR0.
9. The purpose of the NOP command is to prevent the DRAM from registering any unwan-
ted commands. A NOP will not terminate an operation that is executing.
10. The DES and NOP commands perform similarly.
11. The power-down mode does not perform any REFRESH operations.
12. ZQ CALIBRATION LONG is used for either ZQinit (first ZQCL command during initializa-
tion) or ZQoper (ZQCL command after initialization).
Table 71: Truth Table – CKE

Notes 1–2 apply to the entire table; see Table 70 (page 116) for additional command details
CKE
Previous Cycle4 Present Cycle4 Command5
Current State3 (n - 1) (n) (RAS#, CAS#, WE#, CS#) Action5 Notes
Power-down L L “Don’t Care” Maintain power-down
L H DES or NOP Power-down exit
Self refresh L L “Don’t Care” Maintain self refresh
L H DES or NOP Self refresh exit
Bank(s) active H L DES or NOP Active power-down entry
Reading H L DES or NOP Power-down entry
Writing H L DES or NOP Power-down entry
Precharging H L DES or NOP Power-down entry
Refreshing H L DES or NOP Precharge power-down entry
All banks idle H L DES or NOP Precharge power-down entry 6
H L REFRESH Self refresh
Notes: 1. All states and sequences not shown are illegal or reserved unless explicitly described
elsewhere in this document.
2. tCKE (MIN) means CKE must be registered at multiple consecutive positive clock edges.
CKE must remain at the valid input level the entire time it takes to achieve the required
number of registration clocks. Thus, after any CKE transition, CKE may not transition
from its valid level during the time period of tIS + tCKE (MIN) + tIH.
3. Current state = The state of the DRAM immediately prior to clock edge n.
4. CKE (n) is the logic state of CKE at clock edge n; CKE (n - 1) was the state of CKE at the
previous clock edge.
5. COMMAND is the command registered at the clock edge (must be a legal command as
defined in Table 70 (page 116)). Action is a result of COMMAND. ODT does not affect
the states described in this table and is not listed.
6. Idle state = All banks are closed, no data bursts are in progress, CKE is HIGH, and all tim-
ings from previous operations are satisfied. All self refresh exit and power-down exit pa-
rameters are also satisfied.
Commands
Commands
DESELECT
The DESELT (DES) command (CS# HIGH) prevents new commands from being execu-
ted by the DRAM. Operations already in progress are not affected.
NO OPERATION
The NO OPERATION (NOP) command (CS# LOW) prevents unwanted commands from
being registered during idle or wait states. Operations already in progress are not affec-
ted.
ZQ CALIBRATION LONG
The ZQ CALIBRATION LONG (ZQCL) command is used to perform the initial calibra-
tion during a power-up initialization and reset sequence (see Figure 48 (page 135)).
This command may be issued at any time by the controller, depending on the system
environment. The ZQCL command triggers the calibration engine inside the DRAM. Af-
ter calibration is achieved, the calibrated values are transferred from the calibration en-
gine to the DRAM I/O, which are reflected as updated RON and ODT values.
The DRAM is allowed a timing window defined by either tZQinit or tZQoper to perform
a full calibration and transfer of values. When ZQCL is issued during the initialization
sequence, the timing parameter tZQinit must be satisfied. When initialization is com-
plete, subsequent ZQCL commands require the timing parameter tZQoper to be satis-
fied.
ZQ CALIBRATION SHORT
The ZQ CALIBRATION SHORT (ZQCS) command is used to perform periodic calibra-
tions to account for small voltage and temperature variations. A shorter timing window
is provided to perform the reduced calibration and transfer of values as defined by tim-
ing parameter tZQCS. A ZQCS command can effectively correct a minimum of 0.5% RON
and RTT impedance error within 64 clock cycles, assuming the maximum sensitivities
specified in Table 42 (page 66) and Table 43 (page 66).
ACTIVATE
The ACTIVATE command is used to open (or activate) a row in a particular bank for a
subsequent access. The value on the BA[2:0] inputs selects the bank, and the address
provided on inputs A[n:0] selects the row. This row remains open (or active) for accesses
until a PRECHARGE command is issued to that bank.
A PRECHARGE command must be issued before opening a different row in the same
bank.
READ
The READ command is used to initiate a burst read access to an active row. The address
provided on inputs A[2:0] selects the starting column address, depending on the burst
length and burst type selected (see Burst Order table for additional information). The
value on input A10 determines whether auto precharge is used. If auto precharge is se-
lected, the row being accessed will be precharged at the end of the READ burst. If auto
Commands
precharge is not selected, the row will remain open for subsequent accesses. The value
on input A12 (if enabled in the mode register) when the READ command is issued de-
termines whether BC4 (chop) or BL8 is used. After a READ command is issued, the
READ burst may not be interrupted.
Table 72: READ Command Summary
CKE
Prev. Next BA A[11,
Function Symbol Cycle Cycle CS# RAS# CAS# WE# [2:0] An A12 A10 9:0]
READ BL8MRS, RD H L H L H BA RFU V L CA
BC4MRS
BC4OTF RDS4 H L H L H BA RFU L L CA
BL8OTF RDS8 H L H L H BA RFU H L CA
READ with BL8MRS, RDAP H L H L H BA RFU V H CA
auto BC4MRS
precharge BC4OTF RDAPS4 H L H L H BA RFU L H CA
BL8OTF RDAPS8 H L H L H BA RFU H H CA
WRITE
The WRITE command is used to initiate a burst write access to an active row. The value
on the BA[2:0] inputs selects the bank. The value on input A10 determines whether auto
precharge is used. The value on input A12 (if enabled in the MR) when the WRITE com-
mand is issued determines whether BC4 (chop) or BL8 is used.
Input data appearing on the DQ is written to the memory array subject to the DM input
logic level appearing coincident with the data. If a given DM signal is registered LOW,
the corresponding data will be written to memory. If the DM signal is registered HIGH,
the corresponding data inputs will be ignored and a WRITE will not be executed to that
byte/column location.
Table 73: WRITE Command Summary
CKE
Prev. Next BA A[11,
Function Symbol Cycle Cycle CS# RAS# CAS# WE# [2:0] An A12 A10 9:0]
WRITE BL8MRS, WR H L H L L BA RFU V L CA
BC4MRS
BC4OTF WRS4 H L H L L BA RFU L L CA
BL8OTF WRS8 H L H L L BA RFU H L CA
WRITE with BL8MRS, WRAP H L H L L BA RFU V H CA
auto BC4MRS
precharge BC4OTF WRAPS4 H L H L L BA RFU L H CA
BL8OTF WRAPS8 H L H L L BA RFU H H CA
Commands
PRECHARGE
The PRECHARGE command is used to de-activate the open row in a particular bank or
in all banks. The bank(s) are available for a subsequent row access a specified time ( tRP)
after the PRECHARGE command is issued, except in the case of concurrent auto pre-
charge. A READ or WRITE command to a different bank is allowed during a concurrent
auto precharge as long as it does not interrupt the data transfer in the current bank and
does not violate any other timing parameters. Input A10 determines whether one or all
banks are precharged. In the case where only one bank is precharged, inputs BA[2:0] se-
lect the bank; otherwise, BA[2:0] are treated as “Don’t Care.”
After a bank is precharged, it is in the idle state and must be activated prior to any READ
or WRITE commands being issued to that bank. A PRECHARGE command is treated as
a NOP if there is no open row in that bank (idle state) or if the previously open row is
already in the process of precharging. However, the precharge period is determined by
the last PRECHARGE command issued to the bank.
REFRESH
The REFRESH command is used during normal operation of the DRAM and is analo-
gous to CAS#-before-RAS# (CBR) refresh or auto refresh. This command is nonpersis-
tent, so it must be issued each time a refresh is required. The addressing is generated by
the internal refresh controller. This makes the address bits a “Don’t Care” during a RE-
FRESH command. The DRAM requires REFRESH cycles at an average interval of 7.8μs
(maximum when T C ≤ 85°C or 3.9μs maximum when T C ≤ 95°C). The REFRESH period
begins when the REFRESH command is registered and ends tRFC (MIN) later.
To allow for improved efficiency in scheduling and switching between tasks, some flexi-
bility in the absolute refresh interval is provided. A maximum of eight REFRESH com-
mands can be posted to any given DRAM, meaning that the maximum absolute interval
between any REFRESH command and the next REFRESH command is nine times the
maximum average interval refresh rate. Self refresh may be entered with up to eight RE-
FRESH commands being posted. After exiting self refresh (when entered with posted
REFRESH commands), additional posting of REFRESH commands is allowed to the ex-
tent that the maximum number of cumulative posted REFRESH commands (both pre-
and post-self refresh) does not exceed eight REFRESH commands.
At any given time, a maximum of 16 REFRESH commands can be issued within
2 x tREFI.
Commands
Figure 40: Refresh Mode

T0 T2 T3 T4 Ta0 Ta1 Tb0 Tb1 Tb2
T1
CK#
CK
tCK tCH tCL
CKE Valid 5 Valid 5 Valid 5
Command NOP1 PRE NOP1 NOP1 REF NOP5 REF2 NOP5 NOP5 ACT
Address RA
All banks
A10 RA
One bank
BA[2:0] Bank(s)3 BA
DQS, DQS#4
DQ4
DM4
tRP tRFC (MIN) tRFC2
Indicates break
Don’t Care
in time scale
Notes: 1. NOP commands are shown for ease of illustration; other valid commands may be possi-
ble at these times. CKE must be active during the PRECHARGE, ACTIVATE, and REFRESH
commands, but may be inactive at other times (see Power-Down Mode (page 184)).
2. The second REFRESH is not required, but two back-to-back REFRESH commands are
shown.
3. “Don’t Care” if A10 is HIGH at this point; however, A10 must be HIGH if more than one
bank is active (must precharge all active banks).
4. For operations shown, DM, DQ, and DQS signals are all “Don’t Care”/High-Z.
5. Only NOP and DES commands are allowed after a REFRESH command and until tRFC
(MIN) is satisfied.
SELF REFRESH
The SELF REFRESH command is used to retain data in the DRAM, even if the rest of the
system is powered down. When in self refresh mode, the DRAM retains data without ex-
ternal clocking. Self refresh mode is also a convenient method used to enable/disable
the DLL as well as to change the clock frequency within the allowed synchronous oper-
ating range (see Input Clock Frequency Change (page 127)). All power supply inputs
(including V REFCA and V REFDQ) must be maintained at valid levels upon entry/exit and
during self refresh mode operation. V REFDQ may float or not drive V DDQ/2 while in self
refresh mode under the following conditions:
• VSS < V REFDQ < V DD is maintained
• VREFDQ is valid and stable prior to CKE going back HIGH
• The first WRITE operation may not occur earlier than 512 clocks after V REFDQ is valid
• All other self refresh mode exit timing requirements are met
Commands
DLL Disable Mode

If the DLL is disabled by the mode register (MR1[0] can be switched during initialization
or later), the DRAM is targeted, but not guaranteed, to operate similarly to the normal
mode, with a few notable exceptions:
• The DRAM supports only one value of CAS latency (CL = 6) and one value of CAS
WRITE latency (CWL = 6).
• DLL disable mode affects the read data clock-to-data strobe relationship (tDQSCK),
but not the read data-to-data strobe relationship (tDQSQ, tQH). Special attention is
required to line up the read data with the controller time domain when the DLL is dis-
abled.
• In normal operation (DLL on), tDQSCK starts from the rising clock edge AL + CL
cycles after the READ command. In DLL disable mode, tDQSCK starts AL + CL - 1 cy-
cles after the READ command. Additionally, with the DLL disabled, the value of
tDQSCK could be larger than tCK.
The ODT feature (including dynamic ODT) is not supported during DLL disable mode.
The ODT resistors must be disabled by continuously registering the ODT ball LOW by
programming RTT,nom MR1[9, 6, 2] and RTT(WR) MR2[10, 9] to 0 while in the DLL disable
mode.
Specific steps must be followed to switch between the DLL enable and DLL disable
modes due to a gap in the allowed clock rates between the two modes (tCK [AVG] MAX
and tCK [DLL_DIS] MIN, respectively). The only time the clock is allowed to cross this
clock rate gap is during self refresh mode. Thus, the required procedure for switching
from the DLL enable mode to the DLL disable mode is to change frequency during self
refresh:
1. Starting from the idle state (all banks are precharged, all timings are fulfilled, ODT
is turned off, and RTT,nom and RTT(WR) are High-Z), set MR1[0] to 1 to disable the
DLL.
2. Enter self refresh mode after tMOD has been satisfied.
3. After tCKSRE is satisfied, change the frequency to the desired clock rate.
4. Self refresh may be exited when the clock is stable with the new frequency for
tCKSRX. After tXS is satisfied, update the mode registers with appropriate values.
5. The DRAM will be ready for its next command in the DLL disable mode after the
greater of tMRD or tMOD has been satisfied. A ZQCL command should be issued
with appropriate timings met.
Commands
Figure 41: DLL Enable Mode to DLL Disable Mode

T0 T1 Ta0 Ta1 Tb0 Tc0 Td0 Td1 Te0 Te1 Tf0
CK#
CK
CKE Valid1
Command MRS2 NOP SRE3 NOP SRX4 NOP MRS5 NOP Valid1
6 tMOD tCKSRE 7 tCKSRX8 tXS tMOD
tCKESR
ODT9 Valid1
Indicates break
Don’t Care
in time scale
Notes: 1. Any valid command.

2. Disable DLL by setting MR1[0] to 1.
3. Enter SELF REFRESH.
4. Exit SELF REFRESH.
5. Update the mode registers with the DLL disable parameters setting.
6. Starting with the idle state, RTT is in the High-Z state.
7. Change frequency.
8. Clock must be stable tCKSRX.
9. Static LOW in the case that RTT,nom or RTT(WR) is enabled; otherwise, static LOW or HIGH.
A similar procedure is required for switching from the DLL disable mode back to the
DLL enable mode. This also requires changing the frequency during self refresh mode
1. Starting from the idle state (all banks are precharged, all timings are fulfilled, ODT
is turned off, and RTT,nom and RTT(WR) are High-Z), enter self refresh mode.
2. After tCKSRE is satisfied, change the frequency to the new clock rate.
3. Self refresh may be exited when the clock is stable with the new frequency for
tCKSRX. After tXS is satisfied, update the mode registers with the appropriate val-
ues. At a minimum, set MR1[0] to 0 to enable the DLL. Wait tMRD, then set MR0[8]
to 1 to enable DLL RESET.
4. After another tMRD delay is satisfied, update the remaining mode registers with
the appropriate values.
5. The DRAM will be ready for its next command in the DLL enable mode after the
greater of tMRD or tMOD has been satisfied. However, before applying any com-
mand or function requiring a locked DLL, a delay of tDLLK after DLL RESET must
be satisfied. A ZQCL command should be issued with the appropriate timings
met.
Commands
Figure 42: DLL Disable Mode to DLL Enable Mode
T0 Ta0 Ta1 Tb0 Tc0 Tc1 Td0 Te0 Tf0 Tg0 Th0
CK#
CK
CKE Valid
tDLLK
Command NOP SRE1 NOP SRX2 MRS3 MRS4 MRS5 Valid 6

7 tCKSRE 8 tCKSRX9 tXS tMRD tMRD
ODTLoff + 1 × tCK
tCKESR
ODT10
Indicates break
Don’t Care
in time scale
Notes: 1. Enter SELF REFRESH.

2. Exit SELF REFRESH.
3. Wait tXS, then set MR1[0] to 0 to enable DLL.
4. Wait tMRD, then set MR0[8] to 1 to begin DLL RESET.
5. Wait tMRD, update registers (CL, CWL, and write recovery may be necessary).
6. Wait tMOD, any valid command.
7. Starting with the idle state.
8. Change frequency.
9. Clock must be stable at least tCKSRX.
10. Static LOW in the case that RTT,nom or RTT(WR) is enabled; otherwise, static LOW or HIGH.
The clock frequency range for the DLL disable mode is specified by the parameter tCK
(DLL_DIS). Due to latency counter and timing restrictions, only CL = 6 and CWL = 6 are
supported.
DLL disable mode will affect the read data clock to data strobe relationship (tDQSCK)
but not the data strobe to data relationship (tDQSQ, tQH). Special attention is needed to
line up read data to the controller time domain.
Compared to the DLL on mode where tDQSCK starts from the rising clock edge AL + CL
cycles after the READ command, the DLL disable mode tDQSCK starts AL + CL - 1 cycles
after the READ command.
WRITE operations function similarly between the DLL enable and DLL disable modes;
however, ODT functionality is not allowed with DLL disable mode.
Commands
Figure 43: DLL Disable tDQSCK

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10
CK#
CK
Command READ NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
Address Valid
RL = AL + CL = 6 (CL = 6, AL = 0)
CL = 6
DQS, DQS# DLL on
DQ BL8 DLL on DI DI DI DI DI DI DI DI
b b+1 b+2 b+3 b+4 b+5 b+6 b+7
RL (DLL_DIS) = AL + (CL - 1) = 5
tDQSCK (DLL_DIS) MIN
DQS, DQS# DLL off
DQ BL8 DLL disable DI DI DI DI DI DI DI DI

b b+1 b+2 b+3 b+4 b+5 b+6 b+7
tDQSCK (DLL_DIS) MAX
DQS, DQS# DLL off
DQ BL8 DLL disable DI DI DI DI DI DI DI DI

b b+1 b+2 b+3 b+4 b+5 b+6 b+7
Transitioning Data Don’t Care
Table 74: READ Electrical Characteristics, DLL Disable Mode
Parameter Symbol Min Max Unit

Access window of DQS from CK, CK# tDQSCK (DLL_DIS) 1 10 ns
Input Clock Frequency Change

When the DDR3 SDRAM is initialized, the clock must be stable during most normal
states of operation. This means that after the clock frequency has been set to the stable
state, the clock period is not allowed to deviate, except for what is allowed by the clock
jitter and spread spectrum clocking (SSC) specifications.
The input clock frequency can be changed from one stable clock rate to another under
two conditions: self refresh mode and precharge power-down mode. It is illegal to
change the clock frequency outside of those two modes. For the self refresh mode con-
dition, when the DDR3 SDRAM has been successfully placed into self refresh mode and
tCKSRE has been satisfied, the state of the clock becomes a “Don’t Care.” When the
clock becomes a “Don’t Care,” changing the clock frequency is permissible if the new
clock frequency is stable prior to tCKSRX. When entering and exiting self refresh mode
for the sole purpose of changing the clock frequency, the self refresh entry and exit
specifications must still be met.
The precharge power-down mode condition is when the DDR3 SDRAM is in precharge
power-down mode (either fast exit mode or slow exit mode). Either ODT must be at a
logic LOW or RTT,nom and RTT(WR) must be disabled via MR1 and MR2. This ensures
RTT,nom and RTT(WR) are in an off state prior to entering precharge power-down mode,
and CKE must be at a logic LOW. A minimum of tCKSRE must occur after CKE goes LOW
before the clock frequency can change. The DDR3 SDRAM input clock frequency is al-
lowed to change only within the minimum and maximum operating frequency speci-
fied for the particular speed grade (tCK [AVG] MIN to tCK [AVG] MAX). During the input
clock frequency change, CKE must be held at a stable LOW level. When the input clock
frequency is changed, a stable clock must be provided to the DRAM tCKSRX before pre-
charge power-down may be exited. After precharge power-down is exited and tXP has
been satisfied, the DLL must be reset via the MRS. Depending on the new clock fre-
quency, additional MRS commands may need to be issued. During the DLL lock time,
RTT,nom and RTT(WR) must remain in an off state. After the DLL lock time, the DRAM is
ready to operate with a new clock frequency.
Figure 44: Change Frequency During Precharge Power-Down
Previous clock frequency New clock frequency
T0 T1 T2 Ta0 Tb0 Tc0 Tc1 Td0 Td1 Te0 Te1

CK#
CK
tCH tCL tCH tCL tCH tCL tCH tCL
b b b b b b
tCK tCK tCK tCK

b b b
tCKSRE tCKSRX
tIH tIS tCKE
tIH
CKE
tIS
tCPDED
Command NOP NOP NOP NOP NOP MRS NOP Valid
Address DLL RESET Valid
tAOFPD/tAOF
tXP tIH tIS
ODT
DQS, DQS# High-Z
DQ High-Z
DM
tDLLK
Enter precharge Frequency Exit precharge

power-down mode change power-down mode
Indicates break
in time scale Don’t Care
Notes: 1. Applicable for both SLOW-EXIT and FAST-EXIT precharge power-down modes.
2. tAOFPD and tAOF must be satisfied and outputs High-Z prior to T1 (see On-Die Termina-
tion (ODT) (page 194) for exact requirements).
3. If the RTT,nom feature was enabled in the mode register prior to entering precharge
power-down mode, the ODT signal must be continuously registered LOW, ensuring RTT
is in an off state. If the RTT,nom feature was disabled in the mode register prior to enter-
ing precharge power-down mode, RTT will remain in the off state. The ODT signal can
be registered LOW or HIGH in this case.
Write Leveling
Write Leveling
For better signal integrity, DDR3 SDRAM memory modules have adopted fly-by topolo-
gy for the commands, addresses, control signals, and clocks. Write leveling is a scheme
for the memory controller to adjust or de-skew the DQS strobe (DQS, DQS#) to CK rela-
tionship at the DRAM with a simple feedback feature provided by the DRAM. Write lev-
eling is generally used as part of the initialization process, if required. For normal
DRAM operation, this feature must be disabled. This is the only DRAM operation where
the DQS functions as an input (to capture the incoming clock) and the DQ function as
outputs (to report the state of the clock). Note that nonstandard ODT schemes are re-
quired.
The memory controller using the write leveling procedure must have adjustable delay
settings on its DQS strobe to align the rising edge of DQS to the clock at the DRAM pins.
This is accomplished when the DRAM asynchronously feeds back the CK status via the
DQ bus and samples with the rising edge of DQS. The controller repeatedly delays the
DQS strobe until a CK transition from 0 to 1 is detected. The DQS delay established by
this procedure helps ensure tDQSS, tDSS, and tDSH specifications in systems that use
fly-by topology by de-skewing the trace length mismatch. A conceptual timing of this
procedure is shown in Figure 45.
Figure 45: Write Leveling Concept

T0 T1 T2 T3 T4 T5 T6 T7
CK#
CK
Source
Differential DQS
Tn T0 T1 T2 T3 T4 T5 T6
CK#
CK
Destination
Differential DQS
DQ 0 0
Destination
Tn T0 T1 T2 T3 T4 T5 T6
CK#
CK
Push DQS to capture

0–1 transition
Differential DQS
DQ 1 1
Don’t Care
When write leveling is enabled, the rising edge of DQS samples CK, and the prime DQ
outputs the sampled CK’s status. The prime DQ for a x4 or x8 configuration is DQ0 with
Write Leveling
all other DQ (DQ[7:1]) driving LOW. The prime DQ for a x16 configuration is DQ0 for the
lower byte and DQ8 for the upper byte. It outputs the status of CK sampled by LDQS
and UDQS. All other DQ (DQ[7:1], DQ[15:9]) continue to drive LOW. Two prime DQ on a
x16 enable each byte lane to be leveled independently.
The write leveling mode register interacts with other mode registers to correctly config-
ure the write leveling functionality. Besides using MR1[7] to disable/enable write level-
ing, MR1[12] must be used to enable/disable the output buffers. The ODT value, burst
length, and so forth need to be selected as well. This interaction is shown in Table 75. It
should also be noted that when the outputs are enabled during write leveling mode, the
DQS buffers are set as inputs, and the DQ are set as outputs. Additionally, during write
leveling mode, only the DQS strobe terminations are activated and deactivated via the
ODT ball. The DQ remain disabled and are not affected by the ODT ball.
Table 75: Write Leveling Matrix

DRAM
MR1[7] MR1[12] MR1[2, 6, 9] RTT,nom
Write Output RTT,nom DRAM
Leveling Buffers Value ODT Ball DQS DQ DRAM State Case Notes
Disabled See normal operations Write leveling not enabled 0
Enabled Disabled n/a Low Off Off DQS not receiving: not terminated 1 2
(1) (1) Prime DQ High-Z: not terminated
Other DQ High-Z: not terminated
ΩΩ High On DQS not receiving: terminated by RTT 2
ΩΩ, or Prime DQ High-Z: not terminated
120Ω Other DQ High-Z: not terminated
Enabled n/a Low Off DQS receiving: not terminated 3 3
(0) Prime DQ driving CK state: not terminated
Other DQ driving LOW: not terminated
ΩΩ, or High On DQS receiving: terminated by RTT 4
120Ω Prime DQ driving CK state: not terminated
Other DQ driving LOW: not terminated
Notes: 1. Expected usage if used during write leveling: Case 1 may be used when DRAM are on a
dual-rank module and on the rank not being leveled or on any rank of a module not
being leveled on a multislot system. Case 2 may be used when DRAM are on any rank of
a module not being leveled on a multislot system. Case 3 is generally not used. Case 4 is
generally used when DRAM are on the rank that is being leveled.
2. Since the DRAM DQS is not being driven (MR1[12] = 1), DQS ignores the input strobe,
and all RTT,nom values are allowed. This simulates a normal standby state to DQS.
3. Since the DRAM DQS is being driven (MR1[12] = 0), DQS captures the input strobe, and
only some RTT,nom values are allowed. This simulates a normal write state to DQS.
Write Leveling
Write Leveling Procedure

A memory controller initiates the DRAM write leveling mode by setting MR1[7] to 1, as-
suming the other programable features (MR0, MR1, MR2, and MR3) are first set and the
DLL is fully reset and locked. The DQ balls enter the write leveling mode going from a
High-Z state to an undefined driving state, so the DQ bus should not be driven. During
write leveling mode, only the NOP or DES commands are allowed. The memory con-
troller should attempt to level only one rank at a time; thus, the outputs of other ranks
should be disabled by setting MR1[12] to 1 in the other ranks. The memory controller
may assert ODT after a tMOD delay, as the DRAM will be ready to process the ODT tran-
sition. ODT should be turned on prior to DQS being driven LOW by at least ODTLon
delay (WL - 2 tCK), provided it does not violate the aforementioned tMOD delay require-
ment.
The memory controller may drive DQS LOW and DQS# HIGH after tWLDQSEN has
been satisfied. The controller may begin to toggle DQS after tWLMRD (one DQS toggle
is DQS transitioning from a LOW state to a HIGH state with DQS# transitioning from a
HIGH state to a LOW state, then both transition back to their original states). At a mini-
mum, ODTLon and tAON must be satisfied at least one clock prior to DQS toggling.
After tWLMRD and a DQS LOW preamble (tWPRE) have been satisfied, the memory
controller may provide either a single DQS toggle or multiple DQS toggles to sample CK
for a given DQS-to-CK skew. Each DQS toggle must not violate tDQSL (MIN) and tDQSH
(MIN) specifications. tDQSL (MAX) and tDQSH (MAX) specifications are not applicable
during write leveling mode. The DQS must be able to distinguish the CK’s rising edge
within tWLS and tWLH. The prime DQ will output the CK’s status asynchronously from
the associated DQS rising edge CK capture within tWLO. The remaining DQ that always
drive LOW when DQS is toggling must be LOW within tWLOE after the first tWLO is sat-
isfied (the prime DQ going LOW). As previously noted, DQS is an input and not an out-
put during this process. Figure 46 (page 132) depicts the basic timing parameters for
the overall write leveling procedure.
The memory controller will most likely sample each applicable prime DQ state and de-
termine whether to increment or decrement its DQS delay setting. After the memory
controller performs enough DQS toggles to detect the CK’s 0-to-1 transition, the memo-
ry controller should lock the DQS delay setting for that DRAM. After locking the DQS
setting is locked, leveling for the rank will have been achieved, and the write leveling
mode for the rank should be disabled or reprogrammed (if write leveling of another
rank follows).
Write Leveling
Figure 46: Write Leveling Sequence

T1 T2
tWLH tWLS
CK#
CK
Command MRS1 NOP2 NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
tMOD
ODT
tWLDQSEN tDQSL3 tDQSH3 tDQSL3 tDQSH3
Differential DQS4
tWLMRD tWLO tWLO
Prime DQ5
tWLO
tWLOE
Early remaining DQ
tWLO
Late remaining DQ
Indicates break
Undefined Driving Mode Don’t Care
in time scale
Notes: 1. MRS: Load MR1 to enter write leveling mode.

2. NOP: NOP or DES.
3. DQS, DQS# needs to fulfill minimum pulse width requirements tDQSH (MIN) and tDQSL
(MIN) as defined for regular writes. The maximum pulse width is system-dependent.
4. Differential DQS is the differential data strobe (DQS, DQS#). Timing reference points are
the zero crossings. The solid line represents DQS; the dotted line represents DQS#.
5. DRAM drives leveling feedback on a prime DQ (DQ0 for x4 and x8). The remaining DQ
are driven LOW and remain in this state throughout the leveling procedure.
Write Leveling
Write Leveling Mode Exit Procedure

After the DRAM are leveled, they must exit from write leveling mode before the normal
mode can be used. Figure 47 depicts a general procedure for exiting write leveling
mode. After the last rising DQS (capturing a 1 at T0), the memory controller should stop
driving the DQS signals after tWLO (MAX) delay plus enough delay to enable the memo-
ry controller to capture the applicable prime DQ state (at ~Tb0). The DQ balls become
undefined when DQS no longer remains LOW, and they remain undefined until tMOD
after the MRS command (at Te1).
The ODT input should be de-asserted LOW such that ODTLoff (MIN) expires after the
DQS is no longer driving LOW. When ODT LOW satisfies tIS, ODT must be kept LOW (at
~Tb0) until the DRAM is ready for either another rank to be leveled or until the normal
mode can be used. After DQS termination is switched off, write level mode should be
disabled via the MRS command (at Tc2). After tMOD is satisfied (at Te1), any valid com-
mand may be registered by the DRAM. Some MRS commands may be issued after tMRD
(at Td1).
Figure 47: Write Leveling Exit Procedure

T0 T1 T2 Ta0 Tb0 Tc0 Tc1 Tc2 Td0 Td1 Te0 Te1
CK#
CK
Command NOP NOP NOP NOP NOP NOP NOP MRS NOP Valid NOP Valid
tMRD
Address MR1 Valid Valid

tIS tMOD
ODT
t
ODTLoff AOF (MIN)
RTT DQS, RTT DQS# RTT,nom

t
AOF (MAX)
DQS, DQS#
RTT(DQ)
tWLO + tWLOE
DQ CK = 1
Indicates break
Undefined Driving Mode Transitioning Don’t Care
in time scale
Note: 1. The DQ result, = 1, between Ta0 and Tc0, is a result of the DQS, DQS# signals capturing
CK HIGH just after the T0 state.
Initialization
Initialization
The following sequence is required for power-up and initialization, as shown in Figure
48 (page 135):
1. Apply power. RESET# is recommended to be below 0.2 × V DDQ during power ramp
to ensure the outputs remain disabled (High-Z) and ODT off (RTT is also High-Z).
All other inputs, including ODT, may be undefined.
During power-up, either of the following conditions may exist and must be met:
• Condition A:
– VDD and V DDQ are driven from a single-power converter output and are
ramped with a maximum delta voltage between them of ΔV ≤ 300mV. Slope re-
versal of any power supply signal is allowed. The voltage levels on all balls oth-
er than V DD, V DDQ, V SS, V SSQ must be less than or equal to V DDQ and V DD on
one side, and must be greater than or equal to V SSQ and V SS on the other side.
– Both V DD and V DDQ power supplies ramp to V DD,min and V DDQ,min within
tV
DDPR = 200ms.
– VREFDQ tracks V DD × 0.5, V REFCA tracks V DD × 0.5.
– VTT is limited to 0.95V when the power ramp is complete and is not applied
directly to the device; however, tVTD should be greater than or equal to 0 to
avoid device latchup.
• Condition B:
– VDD may be applied before or at the same time as V DDQ.
– VDDQ may be applied before or at the same time as V TT, V REFDQ, and V REFCA.
– No slope reversals are allowed in the power supply ramp for this condition.
2. Until stable power, maintain RESET# LOW to ensure the outputs remain disabled
(High-Z). After the power is stable, RESET# must be LOW for at least 200μs to be-
gin the initialization process. ODT will remain in the High-Z state while RESET# is
LOW and until CKE is registered HIGH.
3. CKE must be LOW 10ns prior to RESET# transitioning HIGH.
4. After RESET# transitions HIGH, wait 500μs (minus one clock) with CKE LOW.
5. After the CKE LOW time, CKE may be brought HIGH (synchronously) and only
NOP or DES commands may be issued. The clock must be present and valid for at
least 10ns (and a minimum of five clocks) and ODT must be driven LOW at least
tIS prior to CKE being registered HIGH. When CKE is registered HIGH, it must be
continuously registered HIGH until the full initialization process is complete.

6. After CKE is registered HIGH and after tXPR has been satisfied, MRS commands
may be issued. Issue an MRS (LOAD MODE) command to MR2 with the applica-
ble settings (provide LOW to BA2 and BA0 and HIGH to BA1).
7. Issue an MRS command to MR3 with the applicable settings.
8. Issue an MRS command to MR1 with the applicable settings, including enabling
the DLL and configuring ODT.
9. Issue an MRS command to MR0 with the applicable settings, including a DLL RE-
SET command. tDLLK (512) cycles of clock input are required to lock the DLL.
10. Issue a ZQCL command to calibrate RTT and RON values for the process voltage
temperature (PVT). Prior to normal operation, tZQinit must be satisfied.
11. When tDLLK and tZQinit have been satisfied, the DDR3 SDRAM will be ready for
normal operation.
Initialization
Figure 48: Initialization Sequence

T (MAX) = 200ms
VDD See power-up

conditions
VDDQ in the
initialization
sequence text,
VTT set up 1
VREF
Stable and T0 T1 Ta0 Tb0 Tc0 Td0

Power-up tVTD valid clock tCK
ramp CK#
CK
tCKSRX tCL tCL
tIOZ = 20ns
RESET#
tIS
T (MIN) = 10ns
CKE Valid
ODT Valid
tIS
Command NOP MRS MRS MRS MRS ZQCL Valid
DM
Address Code Code Code Code Valid
A10 Code Code Code Code A10 = H Valid
BA0 = L BA0 = H BA0 = H BA0 = L

BA[2:0] BA1 = H BA1 = H BA1 = L BA1 = L Valid
BA2 = L BA2 = L BA2 = L BA2 = L
DQS
DQ
RTT
T = 200μs (MIN) T = 500μs (MIN) tXPR tMRD tMRD tMRD tMOD tZQinit
MR2 MR3 MR1 with MR0 with ZQ calibration

All voltage DLL enable DLL reset
supplies valid tDLLK
and stable DRAM ready for
external commands Normal
operation
Indicates break
Don’t Care
in time scale
Mode Registers
Mode Registers
Mode registers (MR0–MR3) are used to define various modes of programmable opera-
tions of the DDR3 SDRAM. A mode register is programmed via the mode register set
(MRS) command during initialization, and it retains the stored information (except for
MR0[8], which is self-clearing) until it is reprogrammed, RESET# goes LOW, the device
loses power.
Contents of a mode register can be altered by re-executing the MRS command. Even if
the user wants to modify only a subset of the mode register’s variables, all variables
must be programmed when the MRS command is issued. Reprogramming the mode
register will not alter the contents of the memory array, provided it is performed cor-
rectly.
The MRS command can only be issued (or re-issued) when all banks are idle and in the
precharged state (tRP is satisfied and no data bursts are in progress). After an MRS com-
mand has been issued, two parameters must be satisfied: tMRD and tMOD. The control-
ler must wait tMRD before initiating any subsequent MRS commands.
Figure 49: MRS to MRS Command Timing (tMRD)

T0 T1 T2 Ta0 Ta1 Ta2
CK#
CK
Command MRS1 NOP NOP NOP NOP MRS2
tMRD
Address Valid Valid
CKE3
Indicates break
Don’t Care
in time scale
Notes: 1. Prior to issuing the MRS command, all banks must be idle and precharged, tRP (MIN)
must be satisfied, and no data bursts can be in progress.
2. tMRD specifies the MRS to MRS command minimum cycle time.
3. CKE must be registered HIGH from the MRS command until tMRSPDEN (MIN) (see Pow-
er-Down Mode (page 184)).
4. For a CAS latency change, tXPDLL timing must be met before any non-MRS command.
The controller must also wait tMOD before initiating any non-MRS commands (exclud-
ing NOP and DES). The DRAM requires tMOD in order to update the requested features,
with the exception of DLL RESET, which requires additional time. Until tMOD has been
satisfied, the updated features are to be assumed unavailable.
Mode Register 0 (MR0)
Figure 50: MRS to nonMRS Command Timing (tMOD)

T0 T1 T2 Ta0 Ta1 Ta2
CK#
CK
non
Command MRS NOP NOP NOP NOP MRS
tMOD
Address Valid Valid
CKE Valid
Old New
setting Updating setting setting
Indicates break
Don’t Care
in time scale
Notes: 1. Prior to issuing the MRS command, all banks must be idle (they must be precharged, tRP
must be satisfied, and no data bursts can be in progress).
2. Prior to Ta2 when tMOD (MIN) is being satisfied, no commands (except NOP/DES) may be
issued.
3. If RTT was previously enabled, ODT must be registered LOW at T0 so that ODTL is satis-
fied prior to Ta1. ODT must also be registered LOW at each rising CK edge from T0 until
tMODmin is satisfied at Ta2.
4. CKE must be registered HIGH from the MRS command until tMRSPDEN (MIN), at which
time power-down may occur (see Power-Down Mode (page 184)).

The base register, mode register 0 (MR0), is used to define various DDR3 SDRAM modes
of operation. These definitions include the selection of a burst length, burst type, CAS
latency, operating mode, DLL RESET, write recovery, and precharge power-down mode
Burst Length
Burst length is defined by MR0[1:0]. Read and write accesses to the DDR3 SDRAM are
burst-oriented, with the burst length being programmable to 4 (chop mode), 8 (fixed
mode), or selectable using A12 during a READ/WRITE command (on-the-fly). The burst
length determines the maximum number of column locations that can be accessed for
a given READ or WRITE command. When MR0[1:0] is set to 01 during a READ/WRITE
command, if A12 = 0, then BC4 (chop) mode is selected. If A12 = 1, then BL8 mode is
selected. Specific timing diagrams, and turnaround between READ/WRITE, are shown
in the READ/WRITE sections of this document.
When a READ or WRITE command is issued, a block of columns equal to the burst
length is effectively selected. All accesses for that burst take place within this block,
meaning that the burst will wrap within the block if a boundary is reached. The block is
uniquely selected by A[i:2] when the burst length is set to 4 and by A[i:3] when the burst
length is set to 8 (where Ai is the most significant column address bit for a given config-
uration). The remaining (least significant) address bit(s) is (are) used to select the start-
ing location within the block. The programmed burst length applies to both READ and
WRITE bursts.
Figure 51: Mode Register 0 (MR0) Definitions

BA2 BA1 BA0 A14 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address bus
17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Mode register 0 (MR0)

01 0 0 01 01 PD WR DLL 01 CAS# latency BT CL BL
M16 M15 Mode Register M1 M0 Burst Length

0 0 Mode register 0 (MR0) 0 0 Fixed BL8
0 1 Mode register 1 (MR1) M12 Precharge PD M8 DLL Reset 0 1 4 or 8 (on-the-fly via A12)
1 0 Mode register 2 (MR2) 0 DLL off (slow exit) 0 No 1 0 Fixed BC4 (chop)
1 1 Mode register 3 (MR3) 1 DLL on (fast exit) 1 Yes 1 1 Reserved
M11 M10 M9 Write Recovery M6 M5 M4 M2 CAS Latency M3 READ Burst Type

0 0 0 16 0 0 0 0 Reserved 0 Sequential (nibble)
0 0 1 5 0 0 1 0 5 1 Interleaved
0 1 0 6 0 1 0 0 6
0 1 1 7 0 1 1 0 7
1 0 0 8 1 0 0 0 8
1 0 1 10 1 0 1 0 9
1 1 0 12 1 1 0 0 10
1 1 1 14 1 1 1 0 11
0 0 0 1 12
0 0 1 1 13
0 1 0 1 14
Note: 1. MR0[18, 15:13, 7] are reserved for future use and must be programmed to 0.
Burst Type
Accesses within a given burst may be programmed to either a sequential or an inter-
leaved order. The burst type is selected via MR0[3] (see Figure 51 (page 138)). The order-
ing of accesses within a burst is determined by the burst length, the burst type, and the
starting column address. DDR3 only supports 4-bit burst chop and 8-bit burst access
modes. Full interleave address ordering is supported for READs, while WRITEs are re-
stricted to nibble (BC4) or word (BL8) boundaries.
Table 76: Burst Order
Starting
Burst READ/ Column Address Burst Type = Sequential Burst Type = Interleaved
Length WRITE (A[2, 1, 0]) (Decimal) (Decimal) Notes
4 READ 000 0, 1, 2, 3, Z, Z, Z, Z 0, 1, 2, 3, Z, Z, Z, Z 1, 2
001 1, 2, 3, 0, Z, Z, Z, Z 1, 0, 3, 2, Z, Z, Z, Z 1, 2
010 2, 3, 0, 1, Z, Z, Z, Z 2, 3, 0, 1, Z, Z, Z, Z 1, 2
011 3, 0, 1, 2, Z, Z, Z, Z 3, 2, 1, 0, Z, Z, Z, Z 1, 2
100 4, 5, 6, 7, Z, Z, Z, Z 4, 5, 6, 7, Z, Z, Z, Z 1, 2
101 5, 6, 7, 4, Z, Z, Z, Z 5, 4, 7, 6, Z, Z, Z, Z 1, 2
110 6, 7, 4, 5, Z, Z, Z, Z 6, 7, 4, 5, Z, Z, Z, Z 1, 2
111 7, 4, 5, 6, Z, Z, Z, Z 7, 6, 5, 4, Z, Z, Z, Z 1, 2
WRITE 0VV 0, 1, 2, 3, X, X, X, X 0, 1, 2, 3, X, X, X, X 1, 3, 4
1VV 4, 5, 6, 7, X, X, X, X 4, 5, 6, 7, X, X, X, X 1, 3, 4
8 READ 000 0, 1, 2, 3, 4, 5, 6, 7 0, 1, 2, 3, 4, 5, 6, 7 1
001 1, 2, 3, 0, 5, 6, 7, 4 1, 0, 3, 2, 5, 4, 7, 6 1
010 2, 3, 0, 1, 6, 7, 4, 5 2, 3, 0, 1, 6, 7, 4, 5 1
011 3, 0, 1, 2, 7, 4, 5, 6 3, 2, 1, 0, 7, 6, 5, 4 1
100 4, 5, 6, 7, 0, 1, 2, 3 4, 5, 6, 7, 0, 1, 2, 3 1
101 5, 6, 7, 4, 1, 2, 3, 0 5, 4, 7, 6, 1, 0, 3, 2 1
110 6, 7, 4, 5, 2, 3, 0, 1 6, 7, 4, 5, 2, 3, 0, 1 1
111 7, 4, 5, 6, 3, 0, 1, 2 7, 6, 5, 4, 3, 2, 1, 0 1
WRITE VVV 0, 1, 2, 3, 4, 5, 6, 7 0, 1, 2, 3, 4, 5, 6, 7 1, 3
Notes: 1. Internal READ and WRITE operations start at the same point in time for BC4 as they do
for BL8.
2. Z = Data and strobe output drivers are in tri-state.
3. V = A valid logic level (0 or 1), but the respective input buffer ignores level-on input
pins.
4. X = “Don’t Care.”
DLL RESET
DLL RESET is defined by MR0[8] (see Figure 51 (page 138)). Programming MR0[8] to 1
activates the DLL RESET function. MR0[8] is self-clearing, meaning it returns to a value
of 0 after the DLL RESET function has been initiated.
Anytime the DLL RESET function is initiated, CKE must be HIGH and the clock held
stable for 512 (tDLLK) clock cycles before a READ command can be issued. This is to
allow time for the internal clock to be synchronized with the external clock. Failing to
wait for synchronization to occur may result in invalid output timing specifications,
such as tDQSCK timings.
Write Recovery
WRITE recovery time is defined by MR0[11:9] (see Figure 51 (page 138)). Write recovery
values of 5, 6, 7, 8, 10, 12, or 14 may be used by programming MR0[11:9]. The user is
required to program the correct value of write recovery, which is calculated by dividing
tWR (ns) by tCK (ns) and rounding up a noninteger value to the next integer:
WR (cycles) = roundup (tWR [ns]/tCK [ns]).
Precharge Power-Down (Precharge PD)

The precharge power-down (PD) bit applies only when precharge power-down mode is
being used. When MR0[12] is set to 0, the DLL is off during precharge power-down, pro-
viding a lower standby current mode; however, tXPDLL must be satisfied when exiting.
When MR0[12] is set to 1, the DLL continues to run during precharge power-down
mode to enable a faster exit of precharge power-down mode; however, tXP must be sat-
isfied when exiting (see Power-Down Mode (page 184)).
CAS Latency (CL)

The CL is defined by MR0[6:4], as shown in Figure 51 (page 138). CAS latency is the de-
lay, in clock cycles, between the internal READ command and the availability of the first
bit of output data. The CL can be set to 5, 6, 7, 8, 9, 10, 11, 12, 13 or 14. DDR3 SDRAM do
not support half-clock latencies.
Examples of CL = 6 and CL = 8 are shown below. If an internal READ command is regis-
tered at clock edge n, and the CAS latency is m clocks, the data will be available nomi-
nally coincident with clock edge n + m. Table 51 (page 74) through Table 54 (page 77)
indicate the CLs supported at various operating frequencies.
Figure 52: READ Latency

T0 T1 T2 T3 T4 T5 T6 T7 T8
CK#
CK
Command READ NOP NOP NOP NOP NOP NOP NOP NOP
AL = 0, CL = 6
DQS, DQS#
DI DI DI DI DI
DQ n n+1 n+2 n+3 n+4
T0 T1 T2 T3 T4 T5 T6 T7 T8
CK#
CK
Command READ NOP NOP NOP NOP NOP NOP NOP NOP
AL = 0, CL = 8
DQS, DQS#
DI
DQ n
Notes: 1. For illustration purposes, only CL = 6 and CL = 8 are shown. Other CL values are possible.
2. Shown with nominal tDQSCK and nominal tDSDQ.

The mode register 1 (MR1) controls additional features and functions not available in
the other mode registers: DLL ENABLE/DISABLE, output drive strength, OUTPUT ENA-
BLE/DISABLE (Q OFF), TDQS ENABLE/DISABLE (x8 configuration only), on-die termi-
nation (ODT) resistance value RTT,nom, WRITE LEVELING, and posted CAS additive la-
tency (AL). These features and functions are controlled via the bits shown in the figure
below. The MR1 register is programmed via the MRS command and retains the stored
information until it is reprogrammed, RESET# goes LOW, or the device loses power. Re-
programming the MR1 register will not alter the contents of the memory array, provided
it is reprogrammed correctly.
The MR1 register must be loaded when all banks are idle and no bursts are in progress.
The controller must satisfy the specified timing parameters tMRD and tMOD before ini-
tiating a subsequent operation.
Figure 53: Mode Register 1 (MR1) Definition
BA2 BA1 BA0 A14 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0

Address bus
17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Mode register 1 (MR1)

01 0 1 01 01 Q Off TDQS 01 RTT 01 WL RTT ODS AL RTT ODS DLL
M0 DLL Enable
M16 M15 Mode Register 0 Enable (normal)
0 0 Mode register set 0 (MR0) M12 Q Off M11 TDQS
1 Disable
0 1 Mode register set 1 (MR1) 0 Enabled 0 Disabled
1 0 Mode register set 2 (MR2) 1 Disabled 1 Enabled M5 M1 Output Drive Strength

1 1 Mode register set 3 (MR3) 0 0 RZQ/6 (40Ω NOM)
R TT,nom (ODT) 2 R TT,nom (ODT) 3 M7 Write Leveling
0 1 RZQ/7 (34Ω NOM)
M9 M6 M2 Non-Writes Writes 0 Disable (normal)
1 0 Reserved
0 0 0 RTT,nom disabled RTT,nom disabled 1 Enable
1 1 Reserved
0 0 1 RZQ/4 (60Ω NOM) RZQ/4 (60Ω NOM)
0 1 0 RZQ/2 (120Ω NOM) RZQ/2 (120Ω NOM)
0 1 1 RZQ/6 (40Ω NOM) RZQ/6 (40Ω NOM) M4 M3 Additive Latency (AL)
1 0 0 RZQ/12 (20Ω NOM) n/a 0 0 Disabled (AL = 0)
1 0 1 RZQ/8 (30Ω NOM) n/a 0 1 AL = CL - 1
1 1 0 Reserved Reserved 1 0 AL = CL - 2
1 1 1 Reserved Reserved 1 1 Reserved
Notes: 1. MR1[17, 14, 13, 10, 8] are reserved for future use and must be programmed to 0.
2. During write leveling, if MR1[7] and MR1[12] are 1, then all RTT,nom values are available
for use.
3. During write leveling, if MR1[7] is 1, but MR1[12] is 0, then only RTT,nom write values are
available for use.
DLL ENABLE/DISABLE
The DLL may be enabled or disabled by programming MR1[0] during the LOAD MODE
command (see Figure 53 (page 142)). The DLL must be enabled for normal operation.
DLL enable is required during power-up initialization and upon returning to normal
operation, after having disabled the DLL for the purpose of debugging or evaluation.
Enabling the DLL should always be followed by resetting the DLL using the appropriate
LOAD MODE command.
If the DLL is enabled prior to entering self refresh mode, the DLL is automatically disa-
bled when entering the SELF REFRESH operation and is automatically re-enabled and
reset upon exit of the SELF REFRESH operation. If the DLL is disabled prior to entering
self refresh mode, the DLL remains disabled, even upon exit of the SELF REFRESH oper-
ation until it is re-enabled and reset.
The DRAM is not tested to check—nor does Micron warrant compliance with—normal
mode timings or functionality when the DLL is disabled. An attempt has been made to
have the DRAM operate in the normal mode where reasonably possible when the DLL
has been disabled; however, by industry standard, a few known exceptions are defined:
• ODT is not allowed to be used.
• The output data is no longer edge-aligned to the clock.
• CL and CWL can only be six clocks.
When the DLL is disabled, timing and functionality can vary from the normal operation
specifications when the DLL is enabled (see DLL Disable Mode (page 123)). Disabling
the DLL also implies the need to change the clock frequency (see Input Clock Frequen-
cy Change (page 127)).
Output Drive Strength

The DDR3 SDRAM uses a programmable impedance output buffer. The drive strength
mode register setting is defined by MR1[5, 1]. RZQ/7 (34Ω [NOM]) is the primary output
driver impedance setting for DDR3 SDRAM devices. To calibrate the output driver im-
pedance, an external precision resistor (RZQ) is connected between the ZQ ball and
VSSQ. The value of the resistor must be 240Ω ±1%.
The output impedance is set during initialization. Additional impedance calibration up-
dates do not affect device operation, and all data sheet timings and current specifica-
tions are met during an update.
To meet the 34Ω specification, the output drive strength must be set to 34Ω during initi-
alization. To obtain a calibrated output driver impedance after power-up, the DDR3
SDRAM needs a calibration command that is part of the initialization and reset proce-
dure.
OUTPUT ENABLE/DISABLE
The OUTPUT ENABLE/DISABLE function is defined by MR1[12] (see Figure 53 (page
142)). When enabled (MR1[12] = 0), all outputs (DQ, DQS, DQS#) function when in the
normal mode of operation. When disabled (MR1[12] = 1), all DDR3 SDRAM outputs
(DQ and DQS, DQS#) are High-Z. The output disable feature is intended to be used dur-
ing IDD characterization of the READ current and during tDQSS margining (write level-
ing) only.
TDQS ENABLE
Termination data strobe (TDQS) is a function of the x8 DDR3 SDRAM configuration
that provides termination resistance RTT, and can be useful in some system configura-
tions. TDQS is not supported in x4 or x16 configurations. When enabled via the mode
register (MR1[11]), RTT applied to DQS and DQS# is also applied to TDQS and TDQS#.
In contrast to the RDQS function of DDR2 SDRAM, DDR3’s TDQS provides the termina-
tion resistance RTT only. The OUTPUT DATA STROBE function of RDQS is not provided
by TDQS; thus, R ON does not apply to TDQS and TDQS#. The TDQS and DM functions
share the same ball. When the TDQS function is enabled via the mode register, the DM
function is not supported. When the TDQS function is disabled, the DM function is pro-
vided, and the TDQS# ball is not used. The TDQS function is available in the x8 DDR3
SDRAM configuration only and must be disabled via the mode register for the x4 and
x16 configurations.
On-Die Termination (ODT)

On-die termination (ODT) resistance RTT,nom is defined by MR1[9, 6, 2] (see Figure 53
(page 142)). The R TT termination resistance value applies to the DQ, DM, DQS, DQS#,
and TDQS, TDQS# balls. DDR3 supports multiple R TT termination resistance values
based on RZQ/n where n can be 2, 4, 6, 8, or 12 and RZQ is 240Ω.
Unlike DDR2, DDR3 ODT must be turned off prior to reading data out and must remain
off during a READ burst. RTT,nom termination is allowed any time after the DRAM is ini-
tialized, calibrated, and not performing read accesses, or when it is not in self refresh
mode. Additionally, write accesses with dynamic ODT (RTT(WR)) enabled temporarily re-
places RTT,nom with RTT(WR).
The effective termination, RTT(EFF), may be different from RTT targeted due to nonlinear-
ity of the termination. For RTT(EFF) values and calculations, see On-Die Termination
(ODT) (page 194).
The ODT feature is designed to improve signal integrity of the memory channel by ena-
bling the DDR3 SDRAM controller to independently turn on/off ODT for any or all devi-
ces. The ODT input control pin is used to determine when R TT is turned on
(ODTLon) and off (ODTLoff), assuming ODT has been enabled via MR1[9, 6, 2].
Timings for ODT are detailed in On-Die Termination (ODT) (page 194).
WRITE LEVELING
The WRITE LEVELING function is enabled by MR1[7] (see Figure 53 (page 142)). Write
leveling is used (during initialization) to de-skew the DQS strobe to clock offset as a re-
sult of fly-by topology designs. For better signal integrity, DDR3 SDRAM memory mod-
ules adopted fly-by topology for the commands, addresses, control signals, and clocks.
The fly-by topology benefits from a reduced number of stubs and their lengths. Howev-
er, fly-by topology induces flight time skews between the clock and DQS strobe (and
DQ) at each DRAM on the DIMM. Controllers will have a difficult time maintaining
tDQSS, tDSS, and tDSH specifications without supporting write leveling in systems that
use fly-by topology-based modules. Write leveling timing and detailed operation infor-
mation is provided in Write Leveling (page 129).
Posted CAS Additive Latency (AL)

Posted CAS additive latency (AL) is supported to make the command and data bus effi-
cient for sustainable bandwidths in DDR3 SDRAM. MR1[4, 3] define the value of AL (see
Figure 54 (page 145)). MR1[4, 3] enable the user to program the DDR3 SDRAM with AL
= 0, CL - 1, or CL - 2.
With this feature, the DDR3 SDRAM enables a READ or WRITE command to be issued
after the ACTIVATE command for that bank prior to tRCD (MIN). The only restriction is
ACTIVATE to READ or WRITE + AL ≥ tRCD (MIN) must be satisfied. Assuming tRCD
(MIN) = CL, a typical application using this feature sets AL = CL - 1tCK = tRCD (MIN) - 1
tCK. The READ or WRITE command is held for the time of the AL before it is released
internally to the DDR3 SDRAM device. READ latency (RL) is controlled by the sum of
the AL and CAS latency (CL), RL = AL + CL. WRITE latency (WL) is the sum of CAS
WRITE latency and AL, WL = AL + CWL (see Mode Register 2 (MR2) (page 146)). Exam-
ples of READ and WRITE latencies are shown in Figure 54 (page 145) and Figure 55
(page 146).
Figure 54: READ Latency (AL = 5, CL = 6)

BC4
T0 T1 T2 T6 T11 T12 T13 T14
CK#
CK
Command ACTIVE n READ n NOP NOP NOP NOP NOP NOP
tRCD (MIN)
DQS, DQS#
AL = 5 CL = 6
DQ DO DO DO DO
n n+1 n+2 n+3
RL = AL + CL = 11
Indicates break
in time scale

the other mode registers. These addional functions are CAS WRITE latency (CWL), AU-
TO SELF REFRESH (ASR), SELF REFRESH TEMPERATURE (SRT), and DYNAMIC ODT
(RTT(WR)). These functions are controlled via the bits shown in the figure below. MR2 is
programmed via the MRS command and will retain the stored information until it is
programmed again or the device loses power. Reprogramming the MR2 register will not
alter the contents of the memory array, provided it is reprogrammed correctly. The MR2
register must be loaded when all banks are idle and no data bursts are in progress, and
the controller must wait the specified time tMRD and tMOD before initiating a subse-
quent operation.
17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Mode register 2 (MR2)

01 1 0 01 01 01 01 RTT(WR) 01 SRT ASR CWL 0 1 0 1 01
M16 M15 Mode Register M7 Self Refresh Temperature M5 M4 M3 CAS Write Latency (CWL)
0 0 Mode register set 0 (MR0) 0 Normal (0°C to 85°C) 0 0 0 5 CK (tCK 2.5ns)
0 1 Mode register set 1 (MR1) 1 Extended (0°C to 95°C) 0 0 1 6 CK (2.5ns > tCK 1.875ns)
1 0 Mode register set 2 (MR2) 0 1 0 7 CK (1.875ns > tCK 1.5ns)
1 1 Mode register set 3 (MR3) 0 1 1 8 CK (1.5ns > tCK 1.25ns)
1 0 0 9 CK (1.25ns > tCK 1.07ns)
1 0 1 10 CK (1.071ns > tCK 0.938ns)
Dynamic ODT
M6 Auto Self Refresh 1 1 0 Reserved
M10 M9 (R TT(WR) )
0 Disabled: Manual 1 1 1 Reserved
0 0 RTT(WR) disabled
0 1 RZQ/4 (60ȍ NOM) 1 Enabled: Automatic
1 0 RZQ/2 (120ȍ NOM)
1 1 Reserved
Note: 1. MR2[17, 14:11, 8, and 2:0] are reserved for future use and must all be programmed to 0.
CAS WRITE Latency (CWL)

CAS write latency (CWL) is defined by MR2[5:3] and is the delay, in clock cycles, from
the releasing of the internal write to the latching of the first data in. CWL must be cor-
rectly set to the corresponding operating clock frequency (see Figure 55). The overall
WRITE latency (WL) is equal to CWL + AL (Figure 53 (page 142)).
Figure 56: CAS WRITE Latency
T0 T1 T2 T6 T11 T12 T13 T14

CK#
CK
Command ACTIVE n WRITE n NOP NOP NOP NOP NOP NOP
tRCD (MIN)
DQS, DQS#
AL = 5 CWL = 6
DQ DI DI DI DI
n n+1 n+2 n+3
WL = AL + CWL = 11
Indicates break
in time scale
AUTO SELF REFRESH (ASR)

Mode register MR2[6] is used to disable/enable the ASR function. When ASR is disabled,
the self refresh mode’s refresh rate is assumed to be at the normal 85°C limit (some-
times referred to as 1x refresh rate). In the disabled mode, ASR requires the user to en-
sure the DRAM never exceeds a case temperature ( T C) of 85°C while in self refresh, un-
less the user enables the SRT function when T C is between 85°C and 95°C.
Enabling ASR assumes the DRAM self refresh rate is changed automatically from 1x to
2x when T C exceeds 85°C. This enables the user to operate the DRAM beyond the stand-
ard 85°C limit up to the optional extended temperature range of 95°C while in self re-
fresh mode.
The standard self refresh current test specifies test conditions for normal T C (85°C) only,
meaning that if ASR is enabled, the standard self refresh current specifications do not
apply (see Extended Temperature Usage (page 183)).
SELF REFRESH TEMPERATURE (SRT)

Mode register MR2[7] is used to disable/enable the SRT function. When SRT is disabled,
the self refresh mode’s refresh rate is assumed to be at the normal 85°C limit (some-
times referred to as 1x refresh rate). In the disabled mode, SRT requires the user to en-
sure the DRAM never exceeds a T C of 85°C while in self refresh mode, unless the user
enables ASR.
When SRT is enabled, the DRAM self refresh is changed internally from 1x to 2x, regard-
less of T C. This enables the user to operate the DRAM beyond the standard 85°C limit up
to the optional extended temperature range of 95°C while in self refresh mode. The
standard self refresh current test specifies test conditions for normal T C (85°C) only,
meaning that if SRT is enabled, the standard self refresh current specifications do not
apply (see Extended Temperature Usage (page 183)).
SRT versus ASR

If the normal T C limit of 85°C is not exceeded, then neither SRT nor ASR is required, and
both can be disabled throughout operation. However, if the extended temperature op-
tion of 95°C is needed, the user is required to provide a 2x refresh rate during manual
refresh and to enable either the SRT or the ASR to ensure self refresh is performed at the
2x rate.
SRT forces the DRAM to switch the internal self refresh rate from 1x to 2x. Self refresh is
performed at the 2x refresh rate regardless of the case temperature.
ASR automatically switches the DRAM’s internal self refresh rate from 1x to 2x. Howev-
er, while in self refresh mode, ASR enables the refresh rate to automatically adjust be-
tween 1x and 2x over the supported temperature range. One other disadvantage of ASR
is the DRAM cannot always switch from a 1x to 2x refresh rate at an exact T C of 85°C.
Although the DRAM will support data integrity when it switches from a 1x to 2x refresh
rate, it may switch at a temperature lower than 85°C.
Since only one mode is necessary, SRT and ASR cannot be enabled at the same time.
Dynamic On-Die Termination (ODT)

The dynamic ODT (RTT(WR)) feature is defined by MR2[10, 9]. Dynamic ODT is enabled
when a value is selected for the dynamic ODT resistance RTT(WR). This new DDR3
SDRAM feature enables the ODT termination resistance value to change without issu-
ing an MRS command, essentially changing the ODT termination on-the-fly.
With dynamic ODT (RTT(WR)) enabled, the DRAM switches from nominal ODT (RTT,nom)
to dynamic ODT (RTT(WR)) when beginning a WRITE burst, and subsequently switches
back to normal ODT (RTT,nom) at the completion of the WRITE burst. If R TT,nom is disa-
bled, the RTT,nom value will be High-Z. Special timing parameters must be adhered to
when dynamic ODT (RTT(WR)) is enabled: ODTLcnw, ODTLcwn4, ODTLcwn8, ODTH4,
ODTH8, and tADC.
Dynamic ODT is only applicable during WRITE cycles. If normal ODT (R TT,nom) is disa-
bled, dynamic ODT (RTT(WR)) is still permitted. RTT,nom and RTT(WR) can be used inde-
pendent of one another. Dynamic ODT is not available during write leveling mode, re-
gardless of the state of ODT (RTT,nom). For details on dynamic ODT operation, refer to
On-Die Termination (ODT) (page 194).

the other mode registers. Currently defined is the MULTIPURPOSE REGISTER (MPR).
This function is controlled via the bits shown in the figure below. The MR3 is program-
med via the LOAD MODE command and retains the stored information until it is pro-
grammed again or until the device loses power. Reprogramming the MR3 register will
not alter the contents of the memory array, provided it is reprogrammed correctly. The
MR3 register must be loaded when all banks are idle and no data bursts are in progress,
and the controller must wait the specified time tMRD and tMOD before initiating a sub-
sequent operation.

17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Mode register 3 (MR3)

01 1 1 01 01 01 01 01 01 01 01 01 01 01 01 MPR MPR_RF
M16 M15 Mode Register M2 MPR Enable M1 M0 MPR READ Function

0 0 Mode register set (MR0) 0 Normal DRAM operations2 0 0 Predefined pattern3
0 1 Mode register set 1 (MR1) 1 Dataflow from MPR 0 1 Reserved
1 0 Mode register set 2 (MR2) 1 0 Reserved
1 1 Mode register set 3 (MR3) 1 1 Reserved
Notes: 1. MR3[17 and 14:3] are reserved for future use and must all be programmed to 0.
2. When MPR control is set for normal DRAM operation, MR3[1, 0] will be ignored.
3. Intended to be used for READ synchronization.
MULTIPURPOSE REGISTER (MPR)

The MULTIPURPOSE REGISTER (MPR) function is used to output a predefined system
timing calibration bit sequence. Bit 2 is the master bit that enables or disables access to
the MPR register, and bits 1 and 0 determine which mode the MPR is placed in. The ba-
sic concept of the multipurpose register is shown in Figure 58 (page 150).
If MR3[2] = 0, then MPR access is disabled, and the DRAM operates in normal mode.
However, if MR3[2] = 1, then the DRAM no longer outputs normal read data but outputs
MPR data as defined by MR3[0, 1]. If MR3[0, 1] = 00, then a predefined read pattern for
system calibration is selected.
To enable the MPR, the MRS command is issued to MR3, and MR3[2] = 1. Prior to issu-
ing the MRS command, all banks must be in the idle state (all banks are precharged,
and tRP is met). When the MPR is enabled, any subsequent READ or RDAP commands
are redirected to the multipurpose register. The resulting operation when a READ or
RDAP command is issued, is defined by MR3[1:0] when the MPR is enabled (see Table
78 (page 151)). When the MPR is enabled, only READ or RDAP commands are allowed
until a subsequent MRS command is issued with the MPR disabled (MR3[2] = 0). Power-
down mode, self refresh, and any other non-READ/RDAP commands are not allowed
during MPR enable mode. The RESET function is supported during MPR enable mode.
Figure 58: MPR Block Diagram
Memory core
MR3[2] = 0 (MPR off)
Multipurpose register
predefined data for READs
MR3[2] = 1 (MPR on)
DQ, DM, DQS, DQS#
Notes: 1. A predefined data pattern can be read out of the MPR with an external READ com-
mand.
2. MR3[2] defines whether the data flow comes from the memory core or the MPR. When
the data flow is defined, the MPR contents can be read out continuously with a regular
READ or RDAP command.
Table 77: MPR Functional Description of MR3 Bits
MR3[2] MR3[1:0]
MPR MPR READ Function Function
0 “Don’t Care” Normal operation, no MPR transaction
All subsequent READs come from the DRAM memory array
All subsequent WRITEs go to the DRAM memory array
1 A[1:0] Enable MPR mode, subsequent READ/RDAP commands defined by bits 1 and
(see Table 78 (page 151)) 2
MPR Functional Description

The JEDEC MPR definition enables either a prime DQ (DQ0 on x4 and x8; on x16, DQ0 =
lower byte and DQ8 = upper byte) to output the MPR data with the remaining DQ driv-
en LOW, or all DQ to output the MPR data. The MPR readout supports fixed READ burst
and READ burst chop (MRS and OTF via A12/BC#) with regular READ latencies and AC
timings applicable, provided the DLL is locked as required.
MPR addressing for a valid MPR read is as follows:
• A[1:0] must be set to 00 as the burst order is fixed per nibble.
• A2 selects the burst order: BL8, A2 is set to 0, and the burst order is fixed to 0, 1, 2, 3, 4,
5, 6, 7.
• For burst chop 4 cases, the burst order is switched on the nibble base along with the
following:
– A2 = 0; burst order = 0, 1, 2, 3
– A2 = 1; burst order = 4, 5, 6, 7
• Burst order bit 0 (the first bit) is assigned to LSB, and burst order bit 7 (the last bit) is
assigned to MSB.
• A[9:3] are “Don’t Care.”
• A10 is “Don’t Care.”
• A11 is “Don’t Care.”
• A12: Selects burst chop mode on-the-fly, if enabled within MR0.
• A13 is a “Don’t Care”
• BA[2:0] are “Don’t Care.”
MPR Address Definitions and Bursting Order

The MPR currently supports a single data format. This data format is a predefined read
pattern for system calibration. The predefined pattern is always a repeating 01 bit pat-
tern.
Examples of the different types of predefined READ pattern bursts are shown in the fol-
lowing figures.
Table 78: MPR Readouts and Burst Order Bit Mapping
Burst Read
MR3[2] MR3[1:0] Function Length A[2:0] Burst Order and Data Pattern
1 00 READ predefined pattern BL8 000 Burst order: 0, 1, 2, 3, 4, 5, 6, 7
for system calibration Predefined pattern: 01010101
BC4 000 Burst order: 0, 1, 2, 3
Predefined pattern: 0101
BC4 100 Burst order: 4, 5, 6, 7
Predefined pattern: 0101
1 01 RFU n/a n/a n/a
n/a n/a n/a
n/a n/a n/a
n/a n/a n/a
n/a n/a n/a
n/a n/a n/a
n/a n/a n/a
Note: 1. Burst order bit 0 is assigned to LSB and burst order bit 7 is assigned to MSB of the selec-
ted MPR agent.
Figure 59: MPR System Read Calibration with BL8: Fixed Burst Order Single Readout
T0 Ta0 Tb0 Tb1 Tc0 Tc1 Tc2 Tc3 Tc4 Tc5 Tc6 Tc7 Tc8 Tc9 Tc10
CK#
CK
Command PREA MRS READ1 NOP NOP NOP NOP NOP NOP NOP NOP MRS NOP NOP Valid
tRP tMOD tMPRR tMOD
Bank address 3 Valid 3
A[1:0] 0 02 Valid
A2 1 02 0
A[9:3] 00 Valid 00
A10/AP 1 0 Valid 0
A11 0 Valid 0
A12/BC# 0 Valid 1 0
A[15:13] 0 Valid 0
152
RL
DQS, DQS#
DQ
Indicates break

Don’t Care
in time scale
Notes: 1. READ with BL8 either by MRS or OTF.

2. Memory controller must drive 0 on A[2:0].

Figure 60: MPR System Read Calibration with BL8: Fixed Burst Order, Back-to-Back Readout
T0 Ta Tb Tc0 Tc1 Tc2 Tc3 Tc4 Tc5 Tc6 Tc7 Tc8 Tc9 Tc10 Td
CK#
CK
Command PREA MRS READ1 READ1 NOP NOP NOP NOP NOP NOP NOP NOP NOP MRS Valid
tRP tMOD tCCD tMPRR tMOD
Bank address 3 Valid Valid 3
A[1:0] 0 02 02 Valid
A2 1 02 12 0
A[9:3] 00 Valid Valid 00
A10/AP 1 0 Valid Valid 0
A11 0 Valid Valid 0
A12/BC# 0 Valid Valid 1 0

153
RL
DQS, DQS#
RL
DQ
Indicates break Don’t Care

in time scale
Notes: 1. READ with BL8 either by MRS or OTF.


Figure 61: MPR System Read Calibration with BC4: Lower Nibble, Then Upper Nibble
CK#
CK
Command PREA MRS READ1 READ1 NOP NOP NOP NOP NOP NOP NOP MRS NOP NOP Valid
tRF tMOD tCCD tMPRR tMOD
A[1:0] 0 02 02 Valid
A2 1 03 14 0
A11 0 Valid Valid 0
A12/BC# 0 Valid 1 Valid 1 0
RL
154
DQS, DQS#
RL
DQ
Indicates break

Don’t Care
in time scale
Notes: 1. READ with BC4 either by MRS or OTF.


3. A2 = 0 selects lower 4 nibble bits 0 . . . 3.
4. A2 = 1 selects upper 4 nibble bits 4 . . . 7.
Figure 62: MPR System Read Calibration with BC4: Upper Nibble, Then Lower Nibble
CK#
CK
Command PREA MRS READ1 READ1 NOP NOP NOP NOP NOP NOP NOP MRS NOP NOP Valid
tRF tMOD tCCD tMPRR tMOD
A[1:0] 0 02 02 Valid
A2 1 13 04 0
A11 0 Valid Valid 0
A12/BC# 0 Valid 1 Valid 1 0
RL
155
DQS, DQS#
RL
DQ

in time scale
Notes: 1. READ with BC4 either by MRS or OTF.


3. A2 = 1 selects upper 4 nibble bits 4 . . . 7.
4. A2 = 0 selects lower 4 nibble bits 0 . . . 3.
MODE REGISTER SET (MRS) Command
MPR Read Predefined Pattern

The predefined read calibration pattern is a fixed pattern of 01010101. The following is
an example of using the predetermined read calibration pattern. The example is to per-
form multiple reads from the MPR to do system-level read timing calibration based on
the predefined standard pattern.
The following protocol outlines the steps used to perform the read calibration:
1. Precharge all banks.
2. After tRP is satisfied, set MRS, MR3[2] = 1 and MR3[1:0] = 00. This redirects all sub-
sequent reads and loads the predefined pattern into the MPR. As soon as tMRD
and tMOD are satisfied, the MPR is available.
3. Data WRITE operations are not allowed until the MPR returns to the normal
DRAM state.
4. Issue a READ with burst order information (all other address pins are “Don’t
Care”):
• A[1:0] = 00 (data burst order is fixed starting at nibble)
• A2 = 0 (for BL8, burst order is fixed as 0, 1, 2, 3, 4, 5, 6, 7)
• A12 = 1 (use BL8)
5. After RL = AL + CL, the DRAM bursts out the predefined read calibration pattern
(01010101).
6. The memory controller repeats the calibration reads until read data capture at
memory controller is optimized.
7. After the last MPR read burst and after tMPRR has been satisfied, issue MRS,
MR3[2] = 0, and MR3[1:0] = “Don’t Care” to the normal DRAM state. All subse-
quent read and write accesses will be regular reads and writes from/to the DRAM
array.
8. When tMRD and tMOD are satisfied from the last MRS, the regular DRAM com-
mands (such as activating a memory bank for regular read or write access) are
permitted.
MODE REGISTER SET (MRS) Command

The mode registers are loaded via inputs BA[2:0], A[13:0]. BA[2:0] determine which
mode register is programmed:
• BA2 = 0, BA1 = 0, BA0 = 0 for MR0
• BA2 = 0, BA1 = 0, BA0 = 1 for MR1
• BA2 = 0, BA1 = 1, BA0 = 0 for MR2
• BA2 = 0, BA1 = 1, BA0 = 1 for MR3
The MRS command can only be issued (or re-issued) when all banks are idle and in the
precharged state (tRP is satisfied and no data bursts are in progress). The controller
must wait the specified time tMRD before initiating a subsequent operation such as an
ACTIVATE command (see Figure 49 (page 136)). There is also a restriction after issuing
an MRS command with regard to when the updated functions become available. This
parameter is specified by tMOD. Both tMRD and tMOD parameters are shown in Figure
49 (page 136) and Figure 50 (page 137). Violating either of these requirements will result
in unspecified operation.
ZQ CALIBRATION Operation
ZQ CALIBRATION Operation
The ZQ CALIBRATION command is used to calibrate the DRAM output drivers (RON)
and ODT values (RTT) over process, voltage, and temperature, provided a dedicated
240Ω (±1%) external resistor is connected from the DRAM’s ZQ ball to V SSQ.
DDR3 SDRAM require a longer time to calibrate RON and ODT at power-up initialization
and self refresh exit, and a relatively shorter time to perform periodic calibrations.
DDR3 SDRAM defines two ZQ CALIBRATION commands: ZQCL and ZQCS. An example
of ZQ calibration timing is shown below.
All banks must be precharged and tRP must be met before ZQCL or ZQCS commands
can be issued to the DRAM. No other activities (other than issuing another ZQCL or
ZQCS command) can be performed on the DRAM channel by the controller for the du-
ration of tZQinit or tZQoper. The quiet time on the DRAM channel helps accurately cali-
brate RON and ODT. After DRAM calibration is achieved, the DRAM should disable the
ZQ ball’s current consumption path to reduce power.
ZQ CALIBRATION commands can be issued in parallel to DLL RESET and locking time.
Upon self refresh exit, an explicit ZQCL is required if ZQ calibration is desired.
In dual-rank systems that share the ZQ resistor between devices, the controller must not
enable overlap of tZQinit, tZQoper, or tZQCS between ranks.
Figure 63: ZQ CALIBRATION Timing (ZQCL and ZQCS)

T0 T1 Ta0 Ta1 Ta2 Ta3 Tb0 Tb1 Tc0 Tc1 Tc2
CK#
CK
Command ZQCL NOP NOP NOP Valid Valid ZQCS NOP NOP NOP Valid
Address Valid Valid Valid
A10 Valid Valid Valid
CKE 1 Valid Valid 1 Valid
ODT 2 Valid Valid 2 Valid
Activ-
DQ 3 High-Z Activities 3 High-Z ities
tZQinit or tZQoper tZQCS

in time scale
Notes: 1. CKE must be continuously registered HIGH during the calibration procedure.
2. ODT must be disabled via the ODT signal or the MRS during the calibration procedure.
3. All devices connected to the DQ bus should be High-Z during calibration.
ACTIVATE Operation
ACTIVATE Operation
Before any READ or WRITE commands can be issued to a bank within the DRAM, a row
in that bank must be opened (activated). This is accomplished via the ACTIVATE com-
mand, which selects both the bank and the row to be activated.
After a row is opened with an ACTIVATE command, a READ or WRITE command may
be issued to that row, subject to the tRCD specification. However, if the additive latency
is programmed correctly, a READ or WRITE command may be issued prior to tRCD
(MIN). In this operation, the DRAM enables a READ or WRITE command to be issued
after the ACTIVATE command for that bank, but prior to tRCD (MIN) with the require-
ment that (ACTIVATE-to-READ/WRITE) + AL ≥ tRCD (MIN) (see Posted CAS Additive
Latency). tRCD (MIN) should be divided by the clock period and rounded up to the next
whole number to determine the earliest clock edge after the ACTIVATE command on
which a READ or WRITE command can be entered. The same procedure is used to con-
vert other specification limits from time units to clock cycles.
When at least one bank is open, any READ-to-READ command delay or WRITE-to-
WRITE command delay is restricted to tCCD (MIN).
A subsequent ACTIVATE command to a different row in the same bank can only be is-
sued after the previous active row has been closed (precharged). The minimum time in-
terval between successive ACTIVATE commands to the same bank is defined by tRC.
A subsequent ACTIVATE command to another bank can be issued while the first bank is
being accessed, which results in a reduction of total row-access overhead. The mini-
mum time interval between successive ACTIVATE commands to different banks is de-
fined by tRRD. No more than four bank ACTIVATE commands may be issued in a given
tFAW (MIN) period, and the tRRD (MIN) restriction still applies. The tFAW (MIN) param-
eter applies, regardless of the number of banks already opened or closed.
Figure 64: Example: Meeting tRRD (MIN) and tRCD (MIN)

T0 T1 T2 T3 T4 T5 T8 T9 T10 T11
CK#
CK
Command ACT NOP NOP ACT NOP NOP NOP NOP NOP RD/WR
Address Row Row Col
BA[2:0] Bank x Bank y Bank y
tRRD tRCD
Indicates break
Don’t Care
in time scale
ACTIVATE Operation
Figure 65: Example: tFAW

T0 T1 T4 T5 T8 T9 T10 T11 T19 T20
CK#
CK
Command ACT NOP ACT NOP ACT NOP ACT NOP NOP ACT
Address
Row Row Row Row Row
BA[2:0] Bank a Bank b Bank c Bank d Bank ey
tRRD
tFAW
Indicates break
Don’t Care
in time scale
READ Operation
READ Operation
READ bursts are initiated with a READ command. The starting column and bank ad-
dresses are provided with the READ command and auto precharge is either enabled or
disabled for that burst access. If auto precharge is enabled, the row being accessed is
automatically precharged at the completion of the burst. If auto precharge is disabled,
the row will be left open after the completion of the burst.
During READ bursts, the valid data-out element from the starting column address is
available READ latency (RL) clocks later. RL is defined as the sum of posted CAS additive
latency (AL) and CAS latency (CL) (RL = AL + CL). The value of AL and CL is programma-
ble in the mode register via the MRS command. Each subsequent data-out element is
valid nominally at the next positive or negative clock edge (that is, at the next crossing
of CK and CK#). Figure 66 shows an example of RL based on a CL setting of 8 and an AL
setting of 0.
Figure 66: READ Latency

T0 T7 T8 T9 T10 T11 T12 T12
CK#
CK
Command READ NOP NOP NOP NOP NOP NOP NOP
Bank a,
Address Col n
CL = 8, AL = 0
DQS, DQS#
DO
DQ n
Indicates break
in time scale
Notes: 1. DO n = data-out from column n.

2. Subsequent elements of data-out appear in the programmed order following DO n.
DQS, DQS# is driven by the DRAM along with the output data. The initial LOW state on
DQS and HIGH state on DQS# is known as the READ preamble (tRPRE). The LOW state
on DQS and the HIGH state on DQS#, coincident with the last data-out element, is
known as the READ postamble (tRPST). Upon completion of a burst, assuming no other
commands have been initiated, the DQ goes High-Z. A detailed explanation of tDQSQ
(valid data-out skew), tQH (data-out window hold), and the valid data window are de-
picted in Figure 77 (page 168). A detailed explanation of tDQSCK (DQS transition skew
to CK) is also depicted in Figure 77 (page 168).
Data from any READ burst may be concatenated with data from a subsequent READ
command to provide a continuous flow of data. The first data element from the new
burst follows the last element of a completed burst. The new READ command should be
issued tCCD cycles after the first READ command. This is shown for BL8 in Figure 67
(page 162). If BC4 is enabled, tCCD must still be met, which will cause a gap in the data
output, as shown in Figure 68 (page 162). Nonconsecutive READ data is reflected in
Figure 69 (page 163). DDR3 SDRAM does not allow interrupting or truncating any
READ burst.
READ Operation
Data from any READ burst must be completed before a subsequent WRITE burst is al-
lowed. An example of a READ burst followed by a WRITE burst for BL8 is shown in Fig-
ure 70 (page 163) (BC4 is shown in Figure 71 (page 164)). To ensure the READ data is
completed before the WRITE data is on the bus, the minimum READ-to-WRITE timing
is RL + tCCD - WL + 2 tCK.
A READ burst may be followed by a PRECHARGE command to the same bank, provided
auto precharge is not activated. The minimum READ-to-PRECHARGE command spac-
ing to the same bank is four clocks and must also satisfy a minimum analog time from
the READ command. This time is called tRTP (READ-to-PRECHARGE). tRTP starts AL
cycles later than the READ command. Examples for BL8 are shown in Figure 72 (page
164) and BC4 in Figure 73 (page 165). Following the PRECHARGE command, a subse-
quent command to the same bank cannot be issued until tRP is met. The PRECHARGE
command followed by another PRECHARGE command to the same bank is allowed.
However, the precharge period will be determined by the last PRECHARGE command
issued to the bank.
If A10 is HIGH when a READ command is issued, the READ with auto precharge func-
tion is engaged. The DRAM starts an auto precharge operation on the rising edge, which
is AL + tRTP cycles after the READ command. DRAM support a tRAS lockout feature (see
Figure 75 (page 165)). If tRAS (MIN) is not satisfied at the edge, the starting point of the
auto precharge operation will be delayed until tRAS (MIN) is satisfied. If tRTP (MIN) is
not satisfied at the edge, the starting point of the auto precharge operation is delayed
until tRTP (MIN) is satisfied. In case the internal precharge is pushed out by tRTP, tRP
starts at the point at which the internal precharge happens (not at the next rising clock
edge after this event). The time from READ with auto precharge to the next ACTIVATE
command to the same bank is AL + (tRTP + tRP)*, where * means rounded up to the next
integer. In any event, internal precharge does not start earlier than four clocks after the
last 8n-bit prefetch.
Figure 67: Consecutive READ Bursts (BL8)

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14
CK#
CK
Command1 READ NOP NOP NOP READ NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
tCCD
Bank, Bank,
Address2 Col n Col b
tRPRE tRPST
DQS, DQS#
DQ3 DO DO DO DO DO DO DO DO DO DO DO DO DO DO DO DO
n n+1 n+2 n+3 n+4 n+5 n+6 n+7 b b+1 b+2 b+3 b+4 b+5 b+6 b+7
RL = 5
RL = 5
Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at these times.
2. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during READ command at T0
and T4.
3. DO n (or b) = data-out from column n (or column b).
4. BL8, RL = 5 (CL = 5, AL = 0).
162
Figure 68: Consecutive READ Bursts (BC4)

CK#
CK
Command1 READ NOP NOP NOP READ NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
tCCD

Bank, Bank,
Address2 Col n Col b
tRPRE tRPST tRPRE tRPST
DQS, DQS#
DQ3 DO DO DO DO DO DO DO DO
n n+1 n+2 n+3 b b+1 b+2 b+3
RL = 5
RL = 5
READ Operation
2. The BC4 setting is activated by either MR0[1:0] = 10 or MR0[1:0] = 01 and A12 = 0 during READ command at T0
and T4.
4. BC4, RL = 5 (CL = 5, AL = 0).
Figure 69: Nonconsecutive READ Bursts

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17
CK#
CK
Command READ NOP NOP NOP NOP READ NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
Address Bank a, Bank a,

Col n Col b
CL = 8
CL = 8
DQS, DQS#
DQ DO DO
n b
Notes: 1. AL = 0, RL = 8.
3. Seven subsequent elements of data-out appear in the programmed order following DO n.
4. Seven subsequent elements of data-out appear in the programmed order following DO b.
Figure 70: READ (BL8) to WRITE (BL8)

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15
163
CK#
CK
Command1 READ NOP NOP NOP NOP NOP WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP
tWR
READ-to-WRITE command delay = RL + tCCD + 2tCK - WL tBL = 4 clocks

tWR
Address2 Bank, Bank,

Col n Col b

tRPRE tRPST tWPRE tWPST
DQS, DQS#
DO DO DO DO DO DO DO DO DI DI DI DI DI DI DI DI
DQ3 n n+1 n+2 n+3 n+4 n+5 n+6 n+7 n n+1 n+2 n+3 n+4 n+5 n+6 n+7
RL = 5 WL = 5
READ Operation
2. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during the READ command at
T0, and the WRITE command at T6.
3. DO n = data-out from column, DI b = data-in for column b.
4. BL8, RL = 5 (AL = 0, CL = 5), WL = 5 (AL = 0, CWL = 5).
Figure 71: READ (BC4) to WRITE (BC4) OTF

CK#
CK
Command1 READ NOP NOP NOP WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
tWR
READ-to-WRITE command delay = RL + tCCD/2 + 2tCK - WL tBL = 4 clocks
tWTR
Address2 Bank, Bank,

Col n Col b
tRPRE tRPST tWPRE tWPST
DQS, DQS#
DQ3 DO DO DO DO DI DI DI DI
n n+ 1 n+ 2 n+3 n n+ 1 n+2 n+ 3
RL = 5
WL = 5
2. The BC4 OTF setting is activated by MR0[1:0] and A12 = 0 during READ command at T0 and WRITE command at
T4.
164
3. DO n = data-out from column n; DI n = data-in from column b.

4. BC4, RL = 5 (AL - 0, CL = 5), WL = 5 (AL = 0, CWL = 5).
Figure 72: READ to PRECHARGE (BL8)


CK#
CK

Command READ NOP NOP NOP NOP PRE NOP NOP NOP NOP NOP NOP NOP ACT NOP NOP NOP NOP
Address Bank a, Bank a, Bank a,

Col n (or all) Row b
tRTP tRP
DQS, DQS#
DQ DO DO DO DO DO DO DO DO
n n+1 n+2 n+3 n+4 n+5 n+6 n+7
tRAS
READ Operation
Figure 73: READ to PRECHARGE (BC4)

CK#
CK
Command READ NOP NOP NOP NOP PRE NOP NOP NOP NOP NOP NOP NOP ACT NOP NOP NOP NOP
Address Bank a, Bank a, Bank a,

Col n (or all) Row b
tRP
tRTP
DQS, DQS#
DQ DO DO DO DO
n n+1 n+2 n+3
tRAS
Figure 74: READ to PRECHARGE (AL = 5, CL = 6)

CK#
CK
Command READ NOP NOP NOP NOP NOP NOP NOP NOP PRE NOP NOP NOP NOP NOP ACT
Bank a, Bank a, Bank a,

Address Col n (or all) Row b
AL = 5 tRTP tRP
DQS, DQS#
165
DO DO DO DO
DQ n n+1 n+2 n+3
CL = 6
tRAS

Figure 75: READ with Auto Precharge (AL = 4, CL = 6)

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 Ta0
CK#
CK
Command READ NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP ACT
Address Bank a, Bank a,

Col n Row b
AL = 4 tRTP (MIN)
DQS, DQS#
DQ DO DO DO DO
n n+1 n+2 n+3
CL = 6
READ Operation
tRAS (MIN) tRP
Indicates break Transitioning Data Don’t Care

in time scale
READ Operation
DQS to DQ output timing is shown in Figure 76 (page 167). The DQ transitions between
valid data outputs must be within tDQSQ of the crossing point of DQS, DQS#. DQS must
also maintain a minimum HIGH and LOW time of tQSH and tQSL. Prior to the READ
preamble, the DQ balls will either be floating or terminated, depending on the status of
the ODT signal.
Figure 77 (page 168) shows the strobe-to-clock timing during a READ. The crossing
point DQS, DQS# must transition within ±tDQSCK of the clock crossing point. The data
out has no timing relationship to CK, only to DQS, as shown in Figure 77 (page 168).
Figure 77 (page 168) also shows the READ preamble and postamble. Typically, both
DQS and DQS# are High-Z to save power (VDDQ). Prior to data output from the DRAM,
DQS is driven LOW and DQS# is HIGH for tRPRE. This is known as the READ preamble.
The READ postamble, tRPST, is one half clock from the last DQS, DQS# transition. Dur-
ing the READ postamble, DQS is driven LOW and DQS# is HIGH. When complete, the
DQ is disabled or continues terminating, depending on the state of the ODT signal.
#unique_36/unique_36_Connect_42_c_READ_Operation-fig15 demonstrates how to
measure tRPST.
Figure 76: Data Output Timing – tDQSQ and Data Valid Window
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10
CK#
CK
Command1 READ NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
RL = AL + CL
Bank,
Address2 Col n
tDQSQ (MAX)
tDQSQ tRPST
(MAX) tHZDQ
tLZDQ (MAX)
(MIN)
DQS, DQS#
tRPRE tQH tQH
DQ3 (last data valid) DO DO DO DO DO DO DO DO

n n+1 n+2 n+3 n+4 n+5 n+6 n+7
DQ3 (first data no longer valid) DO DO DO DO DO DO DO DO
n n+1 n+2 n+3 n+4 n+5 n+6 n+7
All DQ collectively DO DO DO DO DO DO DO DO
n n+1 n+2 n+3 n+4 n+5 n+6 n+7
Data valid Data valid
Don’t Care
167
2. The BL8 setting is activated by either MR0[1, 0] = 0, 0 or MR0[0, 1] = 0, 1 and A12 = 1 during READ command at
T0.
3. DO n = data-out from column n.
4. BL8, RL = 5 (AL = 0, CL = 5).
5. Output timings are referenced to VDDQ/2 and DLL on and locked.

6. tDQSQ defines the skew between DQS, DQS# to data and does not define DQS, DQS# to CK.
7. Early data transitions may not always happen at the same DQ. Data transitions of a DQ can be early or late within

a burst.
READ Operation
READ Operation
tHZ and tLZ transitions occur in the same access time as valid data transitions. These
parameters are referenced to a specific voltage level that specifies when the device out-
put is no longer driving tHZDQS and tHZDQ, or begins driving tLZDQS, tLZDQ. Figure
78 (page 169) shows a method of calculating the point when the device is no longer
driving tHZDQS and tHZDQ, or begins driving tLZDQS, tLZDQ, by measuring the signal
at two different voltages. The actual voltage measurement points are not critical as long
as the calculation is consistent. The parameters tLZDQS, tLZDQ, tHZDQS, and tHZDQ
are defined as single-ended.
Figure 77: Data Strobe Timing – READs

RL measured
to this point
T0 T1 T2 T3 T4 T5 T6
CK
CK#
tDQSCK (MIN) tDQSCK (MIN) tDQSCK (MIN) tDQSCK (MIN) tHZDQS (MIN)
tLZDQS (MIN) tQSH tQSL tQSH tQSL
DQS, DQS#
early strobe
tRPRE tRPST
Bit 0 Bit 1 Bit 2 Bit 3 Bit 4 Bit 5 Bit 6 Bit 7
tLZDQS (MAX) tDQSCK tDQSCK tDQSCK tDQSCK tHZDQS (MAX)

(MAX) (MAX) (MAX) (MAX)
tRPST
DQS, DQS#
late strobe
tRPRE tQSH tQSL tQSH tQSL
Bit 0 Bit 1 Bit 2 Bit 3 Bit 4 Bit 5 Bit 6 Bit 7
READ Operation
Figure 78: Method for Calculating tLZ and tHZ
VOH - xmV VTT + 2xmV
VOH - 2xmV VTT + xmV
tHZDQS, tHZDQ tLZDQS, tLZDQ
VOL + 2xmV VTT - xmV

T2 T1
VOL + xmV VTT - 2xmV

T1 T2
tHZDQS, tHZDQ end point = 2 × T1 - T2 tLZDQS, tLZDQ begin point = 2 × T1 - T2
Notes: 1. Within a burst, the rising strobe edge is not necessarily fixed at tDQSCK (MIN) or tDQSCK
(MAX). Instead, the rising strobe edge can vary between tDQSCK (MIN) and tDQSCK
(MAX).
2. The DQS HIGH pulse width is defined by tQSH, and the DQS LOW pulse width is defined
by tQSL. Likewise, tLZDQS (MIN) and tHZDQS (MIN) are not tied to tDQSCK (MIN) (early
strobe case), and tLZDQS (MAX) and tHZDQS (MAX) are not tied to tDQSCK (MAX) (late
strobe case); however, they tend to track one another.
3. The minimum pulse width of the READ preamble is defined by tRPRE (MIN). The mini-
mum pulse width of the READ postamble is defined by tRPST (MIN).
Figure 79: tRPRE Timing

CK
VTT
CK#
tA tB
DQS VTT
Single-ended signal provided
as background information
tC tD
DQS# VTT
Single-ended signal provided

T1
tRPRE begins
tRPRE
DQS - DQS# 0V
Resulting differential T2
tRPRE ends
signal relevant for
tRPRE specification
READ Operation
Figure 80: tRPST Timing

CK
VTT
CK#
tA
DQS VTT
t
Single-ended signal, provided B
tC
tD
DQS# VTT
Single-ended signal, provided
tRPST
DQS - DQS# 0V
signal relevant for tRPST begins
tRPST specification T2
tRPST ends
WRITE Operation
WRITE Operation
WRITE bursts are initiated with a WRITE command. The starting column and bank ad-
dresses are provided with the WRITE command, and auto precharge is either enabled or
disabled for that access. If auto precharge is selected, the row being accessed is pre-
charged at the end of the WRITE burst. If auto precharge is not selected, the row will
remain open for subsequent accesses. After a WRITE command has been issued, the
WRITE burst may not be interrupted. For the generic WRITE commands used in Figure
83 (page 173) through Figure 91 (page 178), auto precharge is disabled.
During WRITE bursts, the first valid data-in element is registered on a rising edge of
DQS following the WRITE latency (WL) clocks later and subsequent data elements will
be registered on successive edges of DQS. WRITE latency (WL) is defined as the sum of
posted CAS additive latency (AL) and CAS WRITE latency (CWL): WL = AL + CWL. The
values of AL and CWL are programmed in the MR0 and MR2 registers, respectively. Prior
to the first valid DQS edge, a full cycle is needed (including a dummy crossover of DQS,
DQS#) and specified as the WRITE preamble shown in Figure 83 (page 173). The half
cycle on DQS following the last data-in element is known as the WRITE postamble.
The time between the WRITE command and the first valid edge of DQS is WL clocks
±tDQSS. Figure 84 (page 174) through Figure 91 (page 178) show the nominal case
where tDQSS = 0ns; however, Figure 83 (page 173) includes tDQSS (MIN) and tDQSS
(MAX) cases.
Data may be masked from completing a WRITE using data mask. The data mask occurs
on the DM ball aligned to the WRITE data. If DM is LOW, the WRITE completes normal-
ly. If DM is HIGH, that bit of data is masked.
Upon completion of a burst, assuming no other commands have been initiated, the DQ
will remain High-Z, and any additional input data will be ignored.
Data for any WRITE burst may be concatenated with a subsequent WRITE command to
provide a continuous flow of input data. The new WRITE command can be tCCD clocks
following the previous WRITE command. The first data element from the new burst is
applied after the last element of a completed burst. Figure 84 (page 174) and Figure 85
(page 174) show concatenated bursts. An example of nonconsecutive WRITEs is shown
in Figure 86 (page 175).
Data for any WRITE burst may be followed by a subsequent READ command after tWTR
has been met (see Figure 87 (page 175), Figure 88 (page 176), and Figure 89 (page
177)).
Data for any WRITE burst may be followed by a subsequent PRECHARGE command,
providing tWR has been met, as shown in Figure 90 (page 178) and Figure 91 (page
178).
Both tWTR and tWR starting time may vary, depending on the mode register settings
(fixed BC4, BL8 versus OTF).
WRITE Operation
Figure 81: tWPRE Timing

CK
VTT
CK#
T1
tWPRE begins
DQS - DQS# 0V
tWPRE
T2
Resulting differential tWPRE ends
signal relevant for
tWPRE specification
Figure 82: tWPST Timing

CK
VTT
CK#
tWPST
DQS - DQS# 0V
tWPSTbegins
signal relevant for
tWPST specification
T2
tWPST ends
WRITE Operation
Figure 83: WRITE Burst

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10
CK#
CK
Command1 WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
WL = AL + CWL
Bank,
Address2 Col n
tWPRE tDQSS tDSH tDSH tDSH tDSH tWPST

tDQSS (MIN)
DQS, DQS#
tDQSH tDQSL tDQSH tDQSL tDQSH tDQSL tDQSH tDQSL tDQSH tDQSL
DQ3 DI DI DI DI DI DI DI DI
n n+1 n+2 n+3 n+4 n+5 n+6 n+7
tWPRE tDSH tDSH tDSH tDSH tWPST

tDQSS (NOM)
DQS, DQS#
tDSS tDSS tDSS tDSS tDSS
n n+1 n+2 n+3 n+4 n+5 n+6 n+7
tDQSS
tWPRE tWPST
tDQSS (MAX)
DQS, DQS#
tDSS tDSS tDSS tDSS tDSS
n n+1 n+2 n+3 n+4 n+5 n+6 n+7
Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at
these times.
2. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during
the WRITE command at T0.
3. DI n = data-in for column n.
4. BL8, WL = 5 (AL = 0, CWL = 5).
5. tDQSS must be met at each rising clock edge.
6. tWPST is usually depicted as ending at the crossing of DQS, DQS#; however, tWPST ac-
tually ends when DQS no longer drives LOW and DQS# no longer drives HIGH.
Figure 84: Consecutive WRITE (BL8) to WRITE (BL8)

CK#
CK
Command1 WRITE NOP NOP NOP WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
tCCD tBL = 4 clocks tWR
tWTR
Address2 Valid Valid
tWPST
tWPRE
DQS, DQS#
DQ3 DI DI DI DI DI DI DI DI DI DI DI DI DI DI DI DI
WL = 5
WL = 5
2. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during the WRITE commands at
T0 and T4.
3. DI n (or b) = data-in for column n (or column b).
4. BL8, WL = 5 (AL = 0, CWL = 5).
174
Figure 85: Consecutive WRITE (BC4) to WRITE (BC4) via OTF

CK#
CK
Command1 WRITE NOP NOP NOP WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
tCCD tBL = 4 clocks tWR
tWTR

tWPRE tWPST tWPRE tWPST
DQS, DQS#
n n+1 n+2 n+3 b b+1 b+2 b+3
WL = 5
WL = 5
WRITE Operation
2. BC4, WL = 5 (AL = 0, CWL = 5).
3. DI n (or b) = data-in for column n (or column b).
4. The BC4 setting is activated by MR0[1:0] = 01 and A12 = 0 during the WRITE command at T0 and T4.
5. If set via MRS (fixed) tWR and tWTR would start T11 (2 cycles earlier).
Figure 86: Nonconsecutive WRITE to WRITE

CK#
CK
Command WRITE NOP NOP NOP NOP WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
Address Valid Valid
WL = CWL + AL = 7
WL = CWL + AL = 7
DQS, DQS#
DQ DI DI DI DI DI DI DI DI DI DI DI DI DI DI DI DI
DM
Transitioning Data Don't Care
Notes: 1. DI n (or b) = data-in for column n (or column b).

2. Seven subsequent elements of data-in are applied in the programmed order following DO n.
3. Each WRITE command may be to any bank.
4. Shown for WL = 7 (CWL = 7, AL = 0).
Figure 87: WRITE (BL8) to READ (BL8)

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 Ta0
CK#
175
CK
Command1 WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP READ
tWTR2

tWPRE tWPST
DQS, DQS#
n n+1 n+2 n+3 n+4 n+5 n+6 n+7
WL = 5
Indicates break
in time scale
WRITE Operation
2. tWTR controls the WRITE-to-READ delay to the same device and starts with the first rising clock edge after the last
write data shown at T9.
3. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and MR0[12] = 1 during the WRITE command
at T0. The READ command at Ta0 can be either BC4 or BL8, depending on MR0[1:0] and the A12 status at Ta0.
5. RL = 5 (AL = 0, CL = 5), WL = 5 (AL = 0, CWL = 5).
Figure 88: WRITE to READ (BC4 Mode Register Setting)

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 Ta0
CK#
CK
Command1 WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP READ
tWTR2
tWPRE tWPST
DQS, DQS#
DQ4 DI DI DI DI
n n+1 n+2 n+3
WL = 5
Indicates break
in time scale
2. tWTR controls the WRITE-to-READ delay to the same device and starts with the first rising clock edge after the last
176
write data shown at T7.

3. The fixed BC4 setting is activated by MR0[1:0] = 10 during the WRITE command at T0 and the READ command at
Ta0.
5. BC4 (fixed), WL = 5 (AL = 0, CWL = 5), RL = 5 (AL = 0, CL = 5).

WRITE Operation
Figure 89: WRITE (BC4 OTF) to READ (BC4 OTF)

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 Tn
CK#
CK
Command1 WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP READ
tBL tWTR2
= 4 clocks
tWPRE tWPST
DQS, DQS#
DQ4 DI DI DI DI
n n+1 n+2 n+3
WL = 5 RL = 5
Indicates break
in time scale
2. tWTR controls the WRITE-to-READ delay to the same device and starts after tBL.
3. The BC4 OTF setting is activated by MR0[1:0] = 01 and A12 = 0 during the WRITE command at T0 and the READ
command at Tn.
177
5. BC4, RL = 5 (AL = 0, CL = 5), WL = 5 (AL = 0, CWL = 5).


WRITE Operation
WRITE Operation
Figure 90: WRITE (BL8) to PRECHARGE

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 Ta0 Ta1
CK#
CK
Command WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP PRE
Address Valid Valid
WL = AL + CWL tWR
DQS, DQS#
DQ BL8 DI DI DI DI DI DI DI DI
n n+1 n+2 n+3 n+4 n+5 n+6 n+7
Indicates break
in time scale
Notes: 1. DI n = data-in from column n.

2. Seven subsequent elements of data-in are applied in the programmed order following
DO n.
3. Shown for WL = 7 (AL = 0, CWL = 7).
Figure 91: WRITE (BC4 Mode Register Setting) to PRECHARGE

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 Ta0 Ta1
CK#
CK
Command WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP PRE
Address Valid Valid
WL = AL + CWL tWR
DQS, DQS#
DQ BC4 DI DI DI DI
n n+1 n+2 n+3
Indicates break
in time scale
these times.
2. The write recovery time (tWR) is referenced from the first rising clock edge after the last
write data is shown at T7. tWR specifies the last burst WRITE cycle until the PRECHARGE
command can be issued to the same bank.
3. The fixed BC4 setting is activated by MR0[1:0] = 10 during the WRITE command at T0.
5. BC4 (fixed), WL = 5, RL = 5.
WRITE Operation
Figure 92: WRITE (BC4 OTF) to PRECHARGE

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 Tn
CK#
CK
Command1 WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP PRE
tWR2
Bank,
Address3 Col n Valid
tWPRE tWPST
DQS, DQS#
DQ4 DI DI DI DI
n n+1 n+2 n+3
WL = 5
Indicates break
in time scale
these times.
2. The write recovery time (tWR) is referenced from the rising clock edge at T9. tWR speci-
fies the last burst WRITE cycle until the PRECHARGE command can be issued to the same
bank.
3. The BC4 setting is activated by MR0[1:0] = 01 and A12 = 0 during the WRITE command
at T0.
5. BC4 (OTF), WL = 5, RL = 5.
DQ Input Timing
Figure 83 (page 173) shows the strobe-to-clock timing during a WRITE burst. DQS,
DQS# must transition within 0.25tCK of the clock transitions, as limited by tDQSS. All
data and data mask setup and hold timings are measured relative to the DQS, DQS#
crossing, not the clock crossing.
The WRITE preamble and postamble are also shown in Figure 83 (page 173). One clock
prior to data input to the DRAM, DQS must be HIGH and DQS# must be LOW. Then for
a half clock, DQS is driven LOW (DQS# is driven HIGH) during the WRITE preamble,
tWPRE. Likewise, DQS must be kept LOW by the controller after the last data is written
to the DRAM during the WRITE postamble, tWPST.

Data setup and hold times are also shown in Figure 83 (page 173). All setup and hold
times are measured from the crossing points of DQS and DQS#. These setup and hold
values pertain to data input and data mask input.
Additionally, the half period of the data input strobe is specified by tDQSH and tDQSL.
WRITE Operation
Figure 93: Data Input Timing
DQS, DQS#
tWPRE tDQSH tDQSL tWPST
DI
DQ b
DM
tDH tDH
tDS tDS
PRECHARGE Operation
PRECHARGE Operation
Input A10 determines whether one bank or all banks are to be precharged and, in the
case where only one bank is to be precharged, inputs BA[2:0] select the bank.
When all banks are to be precharged, inputs BA[2:0] are treated as “Don’t Care.” After a
bank is precharged, it is in the idle state and must be activated prior to any READ or
WRITE commands being issued.
SELF REFRESH Operation

The SELF REFRESH operation is initiated like a REFRESH command except CKE is LOW.
The DLL is automatically disabled upon entering SELF REFRESH and is automatically
enabled and reset upon exiting SELF REFRESH.
All power supply inputs (including V REFCA and V REFDQ) must be maintained at valid lev-
els upon entry/exit and during self refresh mode operation. V REFDQ may float or not
drive V DDQ/2 while in self refresh mode under certain conditions:
• VSS < V REFDQ < V DD is maintained.
• VREFDQ is valid and stable prior to CKE going back HIGH.
• The first WRITE operation may not occur earlier than 512 clocks after V REFDQ is valid.
• All other self refresh mode exit timing requirements are met.
The DRAM must be idle with all banks in the precharge state (tRP is satisfied and no
bursts are in progress) before a self refresh entry command can be issued. ODT must
also be turned off before self refresh entry by registering the ODT ball LOW prior to the
self refresh entry command (see On-Die Termination (ODT) (page 194) for timing re-
quirements). If RTT,nom and RTT(WR) are disabled in the mode registers, ODT can be a
“Don’t Care.” After the self refresh entry command is registered, CKE must be held LOW
to keep the DRAM in self refresh mode.
After the DRAM has entered self refresh mode, all external control signals, except CKE
and RESET#, are “Don’t Care.” The DRAM initiates a minimum of one REFRESH com-
mand internally within the tCKE period when it enters self refresh mode.
The requirements for entering and exiting self refresh mode depend on the state of the
clock during self refresh mode. First and foremost, the clock must be stable (meeting
tCK specifications) when self refresh mode is entered. If the clock remains stable and
the frequency is not altered while in self refresh mode, then the DRAM is allowed to exit
self refresh mode after tCKESR is satisfied (CKE is allowed to transition HIGH tCKESR
later than when CKE was registered LOW). Since the clock remains stable in self refresh
mode (no frequency change), tCKSRE and tCKSRX are not required. However, if the
clock is altered during self refresh mode (if it is turned-off or its frequency changes),
then tCKSRE and tCKSRX must be satisfied. When entering self refresh mode, tCKSRE
must be satisfied prior to altering the clock's frequency. Prior to exiting self refresh
mode, tCKSRX must be satisfied prior to registering CKE HIGH.
When CKE is HIGH during self refresh exit, NOP or DES must be issued for tXS time. tXS
is required for the completion of any internal refresh already in progress and must be
satisfied before a valid command not requiring a locked DLL can be issued to the de-
vice. tXS is also the earliest time self refresh re-entry may occur. Before a command re-
quiring a locked DLL can be applied, a ZQCL command must be issued, tZQOPER tim-
ing must be met, and tXSDLL must be satisfied. ODT must be off during tXSDLL.
SELF REFRESH Operation
Figure 94: Self Refresh Entry/Exit Timing

T0 T1 T2 Ta0 Tb0 Tc0 Tc1 Td0 Te0 Tf0
CK#
CK
tCKSRE1 tCKSRX1
tIS tCPDED tIH tIS
CKE Valid Valid
tCKESR (MIN)1
tIS
ODT2 Valid
ODTL
RESET#2
Command NOP SRE (REF)3 NOP4 SRX (NOP) NOP5 Valid 6 Valid 7
Address Valid Valid
tRP8 tXS6, 9
tXSDLL7, 9
Enter self refresh mode
(synchronous)
Exit self refresh mode
(asynchronous)
Indicates break
Don’t Care
in time scale
Notes: 1. The clock must be valid and stable, meeting tCK specifications at least tCKSRE after en-
tering self refresh mode, and at least tCKSRX prior to exiting self refresh mode, if the
clock is stopped or altered between states Ta0 and Tb0. If the clock remains valid and
unchanged from entry and during self refresh mode, then tCKSRE and tCKSRX do not
apply; however, tCKESR must be satisfied prior to exiting at SRX.
2. ODT must be disabled and RTT off prior to entering self refresh at state T1. If both
RTT,nom and RTT(WR) are disabled in the mode registers, ODT can be a “Don’t Care.”
3. Self refresh entry (SRE) is synchronous via a REFRESH command with CKE LOW.
4. A NOP or DES command is required at T2 after the SRE command is issued prior to the
inputs becoming “Don’t Care.”
5. NOP or DES commands are required prior to exiting self refresh mode until state Te0.
6. tXS is required before any commands not requiring a locked DLL.
7. tXSDLL is required before any commands requiring a locked DLL.
8. The device must be in the all banks idle state prior to entering self refresh mode. For
example, all banks must be precharged, tRP must be met, and no data bursts can be in
progress.
9. Self refresh exit is asynchronous; however, tXS and tXSDLL timings start at the first rising
clock edge where CKE HIGH satisfies tISXR at Tc1. tCKSRX timing is also measured so that
tISXR is satisfied at Tc1.
Extended Temperature Usage
Extended Temperature Usage

Micron’s DDR3 SDRAM support the optional extended case temperature (TC) range of
0°C to 95°C. Thus, the SRT and ASR options must be used at a minimum.
The extended temperature range DRAM must be refreshed externally at 2x (double re-
fresh) anytime the case temperature is above 85°C (and does not exceed 95°C). The ex-
ternal refresh requirement is accomplished by reducing the refresh period from 64ms to
32ms. However, self refresh mode requires either ASR or SRT to support the extended
temperature. Thus, either ASR or SRT must be enabled when T C is above 85°C or self
refresh cannot be used until T C is at or below 85°C. Table 79 summarizes the two exten-
ded temperature options and Table 80 summarizes how the two extended temperature
options relate to one another.
Table 79: Self Refresh Temperature and Auto Self Refresh Description
Field MR2 Bits Description

Self Refresh Temperature (SRT)
SRT 7 If ASR is disabled (MR2[6] = 0), SRT must be programmed to indicate TOPER during self refresh:
*MR2[7] = 0: Normal operating temperature range (0°C to 85°C)
*MR2[7] = 1: Extended operating temperature range (0°C to 95°C)
If ASR is enabled (MR2[7] = 1), SRT must be set to 0, even if the extended temperature range is
supported
*MR2[7] = 0: SRT is disabled
Auto Self Refresh (ASR)
ASR 6 When ASR is enabled, the DRAM automatically provides SELF REFRESH power management func-
tions, (refresh rate for all supported operating temperature values)
* MR2[6] = 1: ASR is enabled (M7 must = 0)
When ASR is not enabled, the SRT bit must be programmed to indicate TOPER during SELF REFRESH
operation
* MR2[6] = 0: ASR is disabled; must use manual self refresh temperature (SRT)
Table 80: Self Refresh Mode Summary
MR2[6] MR2[7] Permitted Operating Temperature

(ASR) (SRT) SELF REFRESH Operation Range for Self Refresh Mode
0 0 Self refresh mode is supported in the normal temperature Normal (0°C to 85°C)
range
0 1 Self refresh mode is supported in normal and extended temper- Normal and extended (0°C to 95°C)
ature ranges; When SRT is enabled, it increases self refresh
power consumption
1 0 Self refresh mode is supported in normal and extended temper- Normal and extended (0°C to 95°C)
ature ranges; Self refresh power consumption may be tempera-
ture-dependent
1 1 Illegal
Power-Down Mode
Power-Down Mode
Power-down is synchronously entered when CKE is registered LOW coincident with a
NOP or DES command. CKE is not allowed to go LOW while an MRS, MPR, ZQCAL,
READ, or WRITE operation is in progress. CKE is allowed to go LOW while any of the
other legal operations (such as ROW ACTIVATION, PRECHARGE, auto precharge, or RE-
FRESH) are in progress. However, the power-down IDD specifications are not applicable
until such operations have completed. Depending on the previous DRAM state and the
command issued prior to CKE going LOW, certain timing constraints must be satisfied
(as noted in Table 81). Timing diagrams detailing the different power-down mode entry
and exits are shown in Figure 95 (page 186) through Figure 104 (page 190).
Table 81: Command to Power-Down Entry Parameters
Last Command Prior to

DRAM Status CKE LOW1 Parameter (Min) Parameter Value Figure
Idle or active ACTIVATE tACTPDEN 1tCK Figure 102 (page 189)
Idle or active PRECHARGE tPRPDEN 1tCK Figure 103 (page 190)
Active READ or READAP tRDPDEN RL + 4tCK + 1tCK Figure 98 (page 187)
Active WRITE: BL8OTF, BL8MRS, tWRPDEN WL + 4tCK + tWR/tCK Figure 99 (page 188)
BC4OTF
Active WRITE: BC4MRS WL + 2tCK + tWR/tCK Figure 99 (page 188)
Active WRITEAP: BL8OTF, BL8MRS, tWRAPDEN WL + 4tCK + WR + 1tCK Figure 100 (page 188)
BC4OTF
Active WRITEAP: BC4MRS WL + 2tCK + WR + 1tCK Figure 100 (page 188)
Idle REFRESH tREFPDEN 1tCK Figure 101 (page 189)
Power-down REFRESH tXPDLL Greater of 10tCK or 24ns Figure 105 (page 191)
Idle MODE REGISTER SET tMRSPDEN tMOD Figure 104 (page 190)
Note: 1. If slow-exit mode precharge power-down is enabled and entered, ODT becomes asyn-
chronous tANPD prior to CKE going LOW and remains asynchronous until tANPD +
tXPDLL after CKE goes HIGH.
Entering power-down disables the input and output buffers, excluding CK, CK#, ODT,
CKE, and RESET#. NOP or DES commands are required until tCPDED has been satis-
fied, at which time all specified input/output buffers are disabled. The DLL should be in
a locked state when power-down is entered for the fastest power-down exit timing. If
the DLL is not locked during power-down entry, the DLL must be reset after exiting
power-down mode for proper READ operation as well as synchronous ODT operation.
During power-down entry, if any bank remains open after all in-progress commands are
complete, the DRAM will be in active power-down mode. If all banks are closed after all
in-progress commands are complete, the DRAM will be in precharge power-down
mode. Precharge power-down mode must be programmed to exit with either a slow exit
mode or a fast exit mode. When entering precharge power-down mode, the DLL is
turned off in slow exit mode or kept on in fast exit mode.
The DLL also remains on when entering active power-down. ODT has special timing
constraints when slow exit mode precharge power-down is enabled and entered. Refer
to Asynchronous ODT Mode (page 207) for detailed ODT usage requirements in slow
Power-Down Mode
exit mode precharge power-down. A summary of the two power-down modes is listed in
Table 82 (page 185).
While in either power-down state, CKE is held LOW, RESET# is held HIGH, and a stable
clock signal must be maintained. ODT must be in a valid state but all other input signals
are “Don’t Care.” If RESET# goes LOW during power-down, the DRAM will switch out of
power-down mode and go into the reset state. After CKE is registered LOW, CKE must
remain LOW until tPD (MIN) has been satisfied. The maximum time allowed for power-
down duration is tPD (MAX) (9 × tREFI).
The power-down states are synchronously exited when CKE is registered HIGH (with a
required NOP or DES command). CKE must be maintained HIGH until tCKE has been
satisfied. A valid, executable command may be applied after power-down exit latency,
tXP, and tXPDLL have been satisfied. A summary of the power-down modes is listed be-
low.
For specific CKE-intensive operations, such as repeating a power-down-exit-to-refresh-
to-power-down-entry sequence, the number of clock cycles between power-down exit
and power-down entry may not be sufficient to keep the DLL properly updated. In addi-
tion to meeting tPD when the REFRESH command is used between power-down exit
and power-down entry, two other conditions must be met. First, tXP must be satisfied
before issuing the REFRESH command. Second, tXPDLL must be satisfied before the
next power-down may be entered. An example is shown in Figure 105 (page 191).
Table 82: Power-Down Modes
Power-
DRAM State MR0[12] DLL State Down Exit Relevant Parameters
Active (any bank open) “Don’t Care” On Fast tXP to any other valid command
Precharged 1 On Fast tXP to any other valid command
(all banks precharged) 0 Off Slow tXPDLL to commands that require the DLL to be
locked (READ, RDAP, or ODT on);
tXP to any other valid command
Power-Down Mode
Figure 95: Active Power-Down Entry and Exit

T0 T1 T2 Ta0 Ta1 Ta2 Ta3 Ta4
CK#
CK
tCK tCH tCL
Command Valid NOP NOP NOP NOP NOP Valid

tPD
tIS tIH
CKE
tIH tIS tCKE (MIN)
Address Valid Valid
tCPDED tXP
Enter power-down Exit power-down

mode mode
Indicates break
Don’t Care
in time scale
Figure 96: Precharge Power-Down (Fast-Exit Mode) Entry and Exit
T0 T1 T2 T3 T4 T5 Ta0 Ta1
CK#
CK
t t t
CK CH CL
Command NOP NOP NOP NOP NOP Valid
t t
CPDED CKE (MIN)
t
t IH
IS
CKE t
IS
t t
PD XP

mode mode
Indicates break
Don’t Care
in time scale
Power-Down Mode
Figure 97: Precharge Power-Down (Slow-Exit Mode) Entry and Exit
T0 T1 T2 T3 T4 Ta Ta1 Tb
CK#
CK
tCK tCH tCL
Command PRE NOP NOP NOP NOP Valid 1 Valid 2
tCPDED tCKE (MIN)
tXP
tIS tIH
CKE
tIS tXPDLL
tPD

mode mode
Indicates break
Don’t Care
in time scale
Notes: 1. Any valid command not requiring a locked DLL.

2. Any valid command requiring a locked DLL.
Figure 98: Power-Down Entry After READ or READ with Auto Precharge (RDAP)
T0 T1 Ta0 Ta1 Ta2 Ta3 Ta4 Ta5 Ta6 Ta7 Ta8 Ta9 Ta10 Ta11 Ta12
CK#
CK
READ/ NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
Command RDAP
tIS tCPDED
CKE
Address Valid
RL = AL + CL tPD
DQS, DQS#
DQ BL8 DI DI DI DI DI DI DI DI
n n+1 n+2 n+3 n+4 n+ 5 n+6 n+7
DQ BC4 DI DI DI DI
n n+1 n+2 n+3
tRDPDEN
Power-down or
self refresh entry
Indicates break
in time scale
Power-Down Mode
Figure 99: Power-Down Entry After WRITE

T0 T1 Ta0 Ta1 Ta2 Ta3 Ta4 Ta5 Ta6 Ta7 Tb0 Tb1 Tb2 Tb3 Tb4
CK#
CK
Command WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
tIS tCPDED
CKE
Address Valid
WL = AL + CWL tWR tPD
DQS, DQS#
DI DI DI DI DI DI DI DI
DQ BL8 n n+1 n+2 n+3 n+4 n+5 n+6 n+7
DQ BC4 DI DI DI DI
n n+1 n+2 n+3
tWRPDEN
Power-down or
self refresh entry1
Indicates break
in time scale
Note: 1. CKE can go LOW 2tCK earlier if BC4MRS.
Figure 100: Power-Down Entry After WRITE with Auto Precharge (WRAP)
T0 T1 Ta0 Ta1 Ta2 Ta3 Ta4 Ta5 Ta6 Ta7 Tb0 Tb1 Tb2 Tb3 Tb4
CK#
CK
Command WRAP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
tIS tCPDED
CKE
Address Valid
A10
WL = AL + CWL WR1 tPD
DQS, DQS#
DI DI DI DI DI DI DI DI
DQ BL8 n n+1 n+2 n+3 n+4 n+5 n+6 n+7
DQ BC4 DI DI DI DI
n n+1 n+2 n+3
tWRAPDEN
Start internal Power-down or

precharge self refresh entry2
Indicates break
in time scale
Notes: 1. tWR is programmed through MR0[11:9] and represents tWRmin (ns)/tCK rounded up to
the next integer tCK.
2. CKE can go LOW 2tCK earlier if BC4MRS.
Power-Down Mode
Figure 101: REFRESH to Power-Down Entry
T0 T1 T2 T3 Ta0 Ta1 Ta2 Tb0

CK#
CK
tCK tCH tCL
Command REFRESH NOP NOP NOP NOP Valid
tCPDED tCKE (MIN)

tIS tPD
CKE
tREFPDEN tXP (MIN)
tRFC (MIN)1
Indicates break
Don’t Care
in time scale
Note: 1. After CKE goes HIGH during tRFC, CKE must remain HIGH until tRFC is satisfied.
Figure 102: ACTIVATE to Power-Down Entry

T0 T1 T2 T3 T4 T5 T6 T7
CK#
CK
tCK tCH tCL
Command ACTIVE NOP NOP
Address Valid
tCPDED
tIS tPD
CKE
tACTPDEN
Don’t Care
Power-Down Mode
Figure 103: PRECHARGE to Power-Down Entry

T0 T1 T2 T3 T4 T5 T6 T7
CK#
CK
tCK tCH tCL
Command PRE NOP NOP
All/single
Address
bank
tCPDED
tIS tPD
CKE
tPREPDEN
Don’t Care
Figure 104: MRS Command to Power-Down Entry

T0 T1 T2 Ta0 Ta1 Ta2 Ta3 Ta4
CK#
CK
tCK tCH tCL tCPDED
Command MRS NOP NOP NOP NOP NOP
Address Valid
tMRSPDEN tPD
tIS
CKE
Indicates break
Don’t Care
in time scale
Power-Down Mode
Figure 105: Power-Down Exit to Refresh to Power-Down Entry

T0 T1 T2 T3 T4 Ta0 Ta1 Tb0
CK#
CK
tCK tCH tCL
Command NOP NOP NOP NOP REFRESH NOP NOP
tCPDED tXP1
tIS tIH
CKE
tIS
tPD tXPDLL2
Enter power-down Exit power-down Enter power-down

mode mode mode
Indicates break
Don’t Care
in time scale
Notes: 1. tXP must be satisfied before issuing the command.

2. tXPDLL must be satisfied (referenced to the registration of power-down exit) before the
next power-down can be entered.
RESET Operation
RESET Operation
The RESET signal (RESET#) is an asynchronous reset signal that triggers any time it
drops LOW, and there are no restrictions about when it can go LOW. After RESET# goes
LOW, it must remain LOW for 100ns. During this time, the outputs are disabled, ODT
(RTT) turns off (High-Z), and the DRAM resets itself. CKE should be driven LOW prior to
RESET# being driven HIGH. After RESET# goes HIGH, the DRAM must be re-initialized
as though a normal power-up was executed. All counters, except refresh counters, on
the DRAM are reset, and data stored in the DRAM is assumed unknown after RESET#
has gone LOW.
RESET Operation
Figure 106: RESET Sequence

System RESET
(warm boot)
Stable and
valid clock T0 T1 Ta0 Tb0 Tc0 Td0
tCK
CK#
CK
tCL tCL
t CKSRX1
T = 100ns (MIN)
tIOZ = 20ns
RESET#
tIS
T = 10ns (MIN)
CKE Valid
tIS tIS
ODT Static LOW in case RTT_Nom is enabled at time Ta0, otherwise static HIGH or LOW Valid
tIS
Command NOP MRS MRS MRS MRS ZQCL Valid
DM
Address Code Code Code Code Valid
A10 Code Code Code Code A10 = H Valid
BA0 = L BA0 = H BA0 = H BA0 = L

BA[2:0] BA1 = H BA1 = H BA1 = L BA1 = L Valid
BA2 = L BA2 = L BA2 = L BA2 = L
High-Z
DQS
High-Z
DQ
High-Z
RTT
T = 500μs (MIN) tXPR tMRD tMRD tMRD tMOD
MR2 MR3 MR1 with MR0 with ZQCAL

All voltage DLL RESET
DLL ENABLE tZQinit
supplies valid
and stable DRAM ready
for external tDLLK
commands
Normal
operation

in time scale
Note: 1. The minimum time required is the longer of 10ns or 5 clocks.

On-die termination (ODT) is a feature that enables the DRAM to enable/disable and
turn on/off termination resistance for each DQ, DQS, DQS#, and DM for the x4 and x8
configurations (and TDQS, TDQS# for the x8 configuration, when enabled). ODT is ap-
plied to each DQ, UDQS, UDQS#, LDQS, LDQS#, UDM, and LDM signal for the x16 con-
figuration.
ODT is designed to improve signal integrity of the memory channel by enabling the
DRAM controller to independently turn on/off the DRAM’s internal termination resist-
ance for any grouping of DRAM devices. ODT is not supported during DLL disable
mode (simple functional representation shown below). The switch is enabled by the in-
ternal ODT control logic, which uses the external ODT ball and other control informa-
tion.
Figure 107: On-Die Termination
ODT
To other VDDQ/2
circuitry RTT
such as
RCV, Switch
... DQ, DQS, DQS#,
DM, TDQS, TDQS#
Functional Representation of ODT

The value of RTT (ODT termination resistance value) is determined by the settings of
several mode register bits (see Table 87 (page 197)). The ODT ball is ignored while in
self refresh mode (must be turned off prior to self refresh entry) or if mode registers
MR1 and MR2 are programmed to disable ODT. ODT is comprised of nominal ODT and
dynamic ODT modes and either of these can function in synchronous or asynchronous
mode (when the DLL is off during precharge power-down or when the DLL is synchro-
nizing). Nominal ODT is the base termination and is used in any allowable ODT state.
Dynamic ODT is applied only during writes and provides OTF switching from no RTT or
RTT,nom to RTT(WR).
The actual effective termination, RTT(EFF), may be different from RTT targeted due to
nonlinearity of the termination. For RTT(EFF) values and calculations, see ODT Charac-
teristics (page 57).
Nominal ODT
ODT (NOM) is the base termination resistance for each applicable ball; it is enabled or
disabled via MR1[9, 6, 2] (see Mode Register 1 (MR1) Definition), and it is turned on or
off via the ODT ball.
Table 83: Truth Table – ODT (Nominal)

MR1[9, 6, 2] ODT Pin DRAM Termination State DRAM State Notes
000 0 RTT,nom disabled, ODT off Any valid 2
000 1 RTT,nom disabled, ODT on Any valid except self refresh, read 3
000–101 0 RTT,nom enabled, ODT off Any valid 2
000–101 1 RTT,nom enabled, ODT on Any valid except self refresh, read 3
110 and 111 X RTT,nom reserved, ODT on or off Illegal
Notes: 1. Assumes dynamic ODT is disabled (see Dynamic ODT (page 196) when enabled).
2. ODT is enabled and active during most writes for proper termination, but it is not illegal
for it to be off during writes.
3. ODT must be disabled during reads. The RTT,nom value is restricted during writes. Dynam-
ic ODT is applicable if enabled.
Nominal ODT resistance RTT,nom is defined by MR1[9, 6, 2], as shown in Mode Register 1
(MR1) Definition. The R TT,nom termination value applies to the output pins previously
mentioned. DDR3 SDRAM supports multiple RTT,nom values based on RZQ/n where n
can be 2, 4, 6, 8, or 12 and RZQ is 240Ω. RTT,nom termination is allowed any time after the
DRAM is initialized, calibrated, and not performing read access, or when it is not in self
refresh mode.
Write accesses use RTT,nom if dynamic ODT (RTT(WR)) is disabled. If RTT,nom is used dur-
ing writes, only RZQ/2, RZQ/4, and RZQ/6 are allowed (see Table 87 (page 197)). ODT
timings are summarized in Table 84 (page 195), as well as listed in Table 56 (page 79).
Examples of nominal ODT timing are shown in conjunction with the synchronous
mode of operation in Synchronous ODT Mode (page 202).
Table 84: ODT Parameters
Definition for All

Symbol Description Begins at Defined to DDR3 Speed Bins Unit
ODTLon ODT synchronous turn-on delay ODT registered HIGH RTT(ON) ±tAON CWL + AL - 2 tCK
ODTLoff ODT synchronous turn-off delay ODT registered HIGH RTT(OFF) ±tAOF CWL + AL - 2 tCK
tAONPD ODT asynchronous turn-on delay ODT registered HIGH RTT(ON) 2–8.5 ns
tAOFPD ODT asynchronous turn-off delay ODT registered HIGH RTT(OFF) 2–8.5 ns
ODTH4 ODT minimum HIGH time after ODT ODT registered HIGH ODT registered 4tCK tCK
assertion or write (BC4) or write registration LOW

with ODT HIGH
ODTH8 ODT minimum HIGH time after Write registration ODT registered 6tCK tCK
write (BL8) with ODT HIGH LOW

tAON ODT turn-on relative to ODTLon Completion of RTT(ON) See Table 56 (page 79) ps
completion ODTLon
tAOF ODT turn-off relative to ODTLoff Completion of RTT(OFF) 0.5tCK ± 0.2tCK tCK
completion ODTLoff
Dynamic ODT
Dynamic ODT
In certain application cases, and to further enhance signal integrity on the data bus, it is
desirable that the termination strength of the DDR3 SDRAM can be changed without
issuing an MRS command, essentially changing the ODT termination on the fly. With
dynamic ODT RTT(WR)) enabled, the DRAM switches from nominal ODT RTT,nom) to dy-
namic ODT RTT(WR)) when beginning a WRITE burst and subsequently switches back to
nominal ODT RTT,nom) at the completion of the WRITE burst. This requirement is sup-
ported by the dynamic ODT feature, as described below.
Dynamic ODT Special Use Case

When DDR3 devices are architect as a single rank memory array, dynamic ODT offers a
special use case: the ODT ball can be wired high (via a current limiting resistor prefer-
red) by having RTT,nom disabled via MR1 and RTT(WR) enabled via MR2. This will allow
the ODT signal not to have to be routed yet the DRAM can provide ODT coverage dur-
ing write accesses.
When enabling this special use case, some standard ODT spec conditions may be viola-
ted: ODT is sometimes suppose to be held low. Such ODT spec violation (ODT not
LOW) is allowed under this special use case. Most notably, if Write Leveling is used, this
would appear to be a problem since RTT(WR) can not be used (should be disabled) and
RTT(NOM) should be used. For Write leveling during this special use case, with the DLL
locked, then RTT(NOM) maybe enabled when entering Write Leveling mode and disabled
when exiting Write Leveling mode. More so, R TT(NOM) must be enabled when enabling
Write Leveling, via same MR1 load, and disabled when disabling Write Leveling, via
same MR1 load if RTT(NOM) is to be used.
ODT will turn-on within a delay of ODTLon + tAON + tMOD + 1CK (enabling via MR1)
or turn-off within a delay of ODTLoff + tAOF + tMOD + 1CK. As seen in the table below,
between the Load Mode of MR1 and the previously specified delay, the value of ODT is
uncertain. this means the DQ ODT termination could turn-on and then turn-off again
during the period of stated uncertainty.
Table 85: Write Leveling with Dynamic ODT Special Case
Begin RTT,nom Uncertainty End RTT,nom Uncertainty I/Os RTT,nom Final State
MR1 load mode command: ODTLon + tAON + tMOD + 1CK DQS, DQS# Drive RTT,nom value
Enable Write Leveling and RTT(NOM) DQs No RTT,nom

MR1 load mode command: ODTLoff + tAOFF + tMOD + 1CK DQS, DQS# No RTT,nom
Disable Write Leveling and RTT(NOM) DQs No RTT,nom
The dynamic ODT mode is enabled if either MR2[9] or MR2[10] is set to 1. Dynamic
ODT is not supported during DLL disable mode so RTT(WR) must be disabled. The dy-
namic ODT function is described below:
• Two RTT values are available—RTT,nom and RTT(WR).
– The value for RTT,nom is preselected via MR1[9, 6, 2].
– The value for RTT(WR) is preselected via MR2[10, 9].
Dynamic ODT
• During DRAM operation without READ or WRITE commands, the termination is con-
trolled.
– Nominal termination strength RTT,nom is used.
– Termination on/off timing is controlled via the ODT ball and latencies ODTLon and
ODTLoff.
• When a WRITE command (WR, WRAP, WRS4, WRS8, WRAPS4, WRAPS8) is registered,
and if dynamic ODT is enabled, the ODT termination is controlled.
– A latency of ODTLcnw after the WRITE command: termination strength R TT,nom
switches to RTT(WR)
– A latency of ODTLcwn8 (for BL8, fixed or OTF) or ODTLcwn4 (for BC4, fixed or OTF)
after the WRITE command: termination strength R TT(WR) switches back to RTT,nom.
– On/off termination timing is controlled via the ODT ball and determined by ODT-
Lon, ODTLoff, ODTH4, and ODTH8.
– During the tADC transition window, the value of RTT is undefined.
ODT is constrained during writes and when dynamic ODT is enabled (see Table 86
(page 197)). ODT timings listed in Table 84 (page 195) also apply to dynamic ODT
mode.
Table 86: Dynamic ODT Specific Parameters
Definition for All

ODTLcnw Change from RTT,nom to Write registration RTT switched from RTT,nom WL - 2 tCK
RTT(WR) to RTT(WR)
ODTLcwn4 Change from RTT(WR) to Write registration RTT switched from RTT(WR) 4tCK + ODTL off tCK
RTT,nom (BC4) to RTT,nom

ODTLcwn8 Change from RTT(WR) to Write registration RTT switched from RTT(WR) 6tCK + ODTL off tCK
RTT,nom (BL8) to RTT,nom

tADC RTT change skew ODTLcnw completed RTT transition complete 0.5tCK ± 0.2tCK tCK
Table 87: Mode Registers for RTT,nom
MR1 (RTT,nom)
M9 M6 M2 RTT,nom (RZQ) RTT,nom (Ohm) RTT,nom Mode Restriction
0 0 0 Off Off n/a
0 0 1 RZQ/4 60 Self refresh
0 1 0 RZQ/2 120
0 1 1 RZQ/6 40
1 0 0 RZQ/12 20 Self refresh, write
1 0 1 RZQ/8 30
1 1 0 Reserved Reserved n/a
1 1 1 Reserved Reserved n/a
Note: 1. RZQ = 240Ω. If RTT,nom is used during WRITEs, only RZQ/2, RZQ/4, RZQ/6 are allowed.
Dynamic ODT
Table 88: Mode Registers for RTT(WR)
MR2 (RTT(WR))
M10 M9 RTT(WR) (RZQ) RTT(WR) (Ohm)
0 0 Dynamic ODT off: WRITE does not affect RTT,nom
0 1 RZQ/4 60
1 0 RZQ/2 120
1 1 Reserved Reserved
Table 89: Timing Diagrams for Dynamic ODT
Figure and Page Title

Figure 108 (page 199) Dynamic ODT: ODT Asserted Before and After the WRITE, BC4
Figure 109 (page 199) Dynamic ODT: Without WRITE Command
Figure 110 (page 200) Dynamic ODT: ODT Pin Asserted Together with WRITE Command for 6 Clock Cycles, BL8
Figure 111 (page 201) Dynamic ODT: ODT Pin Asserted with WRITE Command for 6 Clock Cycles, BC4
Figure 112 (page 201) Dynamic ODT: ODT Pin Asserted with WRITE Command for 4 Clock Cycles, BC4
Figure 108: Dynamic ODT: ODT Asserted Before and After the WRITE, BC4
CK#
CK
Command NOP NOP NOP NOP WRS4 NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
Address Valid
ODTH4 ODTLoff
ODTH4
ODT
ODTLon ODTLcwn4
tAON tADC (MIN) tADC tAOF

(MIN) (MIN) (MIN)
RTT RTT,nom RTT(WR) RTT,nom
tAON (MAX) tADC tADC tAOF (MAX)
(MAX) (MAX)
ODTLcnw
DQS, DQS#
DQ DI DI DI DI
WL n n+ 1 n+ 2 n+ 3
Transitioning Don’t Care
Notes: 1. Via MRS or OTF. AL = 0, CWL = 5. RTT,nom and RTT(WR) are enabled.
2. ODTH4 applies to first registering ODT HIGH and then to the registration of the WRITE command. In this example,
ODTH4 is satisfied if ODT goes LOW at T8 (four clocks after the WRITE command).
199
Figure 109: Dynamic ODT: Without WRITE Command
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11
CK#
CK
Command Valid Valid Valid Valid Valid Valid Valid Valid Valid Valid Valid Valid
Address

ODTH4 ODTLoff
ODTLon
ODT
tAON (MAX) tAOF (MIN)
RTT RTT,nom
tAON (MIN) tAOF (MAX)
DQS, DQS#
DQ
Dynamic ODT
Notes: 1. AL = 0, CWL = 5. RTT,nom is enabled and RTT(WR) is either enabled or disabled.

2. ODTH4 is defined from ODT registered HIGH to ODT registered LOW; in this example, ODTH4 is satisfied. ODT reg-
istered LOW at T5 is also legal.
Figure 110: Dynamic ODT: ODT Pin Asserted Together with WRITE Command for 6 Clock Cycles, BL8
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11
CK#
CK
Command NOP WRS8 NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
ODTLcnw
Address Valid
ODTH8 ODTLoff
ODTLon
ODT
tADC (MAX) tAOF (MIN)

RTT RTT(WR)
tAON (MIN)
tAOF (MAX)
ODTLcwn8
DQS, DQS#
WL
DQ DI DI DI DI DI DI DI DI
b b+1 b+2 b+3 b+ 4 b+5 b+6 b+ 7
200
Notes: 1. Via MRS or OTF; AL = 0, CWL = 5. If RTT,nom can be either enabled or disabled, ODT can be HIGH. RTT(WR) is enabled.
2. In this example, ODTH8 = 6 is satisfied exactly.

Dynamic ODT
Dynamic ODT
Figure 111: Dynamic ODT: ODT Pin Asserted with WRITE Command for 6 Clock Cycles, BC4
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11
CK#
CK
ODTLcnw
Address Valid
ODTH4 ODTLoff
ODT
ODTLon
tADC (MAX) tADC tAOF
(MIN) (MIN)
RTT RTT(WR) RTT,nom
tAON (MIN) tADC tAOF
(MAX) (MAX)
ODTLcwn4
DQS, DQS#
DQ DI DI DI DI
n n+1 n+2 n+3
WL
Notes: 1. Via MRS or OTF. AL = 0, CWL = 5. RTT,nom and RTT(WR) are enabled.
2. ODTH4 is defined from ODT registered HIGH to ODT registered LOW, so in this example,
ODTH4 is satisfied. ODT registered LOW at T5 is also legal.
Figure 112: Dynamic ODT: ODT Pin Asserted with WRITE Command for 4 Clock Cycles, BC4
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11
CK#
CK
ODTLcnw
Address Valid
ODTH4 ODTLoff
ODT
tADC (MAX) tAOF (MIN)
ODTLon
RTT RTT(WR)
tAON (MIN) tAOF (MAX)
ODTLcwn4
DQS, DQS#
WL
DQ DI DI DI DI
n n+1 n+2 n+3
Notes: 1. Via MRS or OTF. AL = 0, CWL = 5. RTT,nom can be either enabled or disabled. If disabled,
ODT can remain HIGH. RTT(WR) is enabled.
2. In this example ODTH4 = 4 is satisfied exactly.
Synchronous ODT Mode

Synchronous ODT mode is selected whenever the DLL is turned on and locked and
when either RTT,nom or RTT(WR) is enabled. Based on the power-down definition, these
modes are:
• Any bank active with CKE HIGH
• Refresh mode with CKE HIGH
• Idle mode with CKE HIGH
• Active power-down mode (regardless of MR0[12])
• Precharge power-down mode if DLL is enabled by MR0[12] during precharge power-
down
ODT Latency and Posted ODT

In synchronous ODT mode, RTT turns on ODTLon clock cycles after ODT is sampled
HIGH by a rising clock edge and turns off ODTLoff clock cycles after ODT is registered
LOW by a rising clock edge. The actual on/off times varies by tAON and tAOF around
each clock edge (see Table 90 (page 203)). The ODT latency is tied to the WRITE latency
(WL) by ODTLon = WL - 2 and ODTLoff = WL - 2.
Since write latency is made up of CAS WRITE latency (CWL) and additive latency (AL),
the AL programmed into the mode register (MR1[4, 3]) also applies to the ODT signal.
The device’s internal ODT signal is delayed a number of clock cycles defined by the AL
relative to the external ODT signal. Thus, ODTLon = CWL + AL - 2 and ODTLoff = CWL +
AL - 2.
Timing Parameters
Synchronous ODT mode uses the following timing parameters: ODTLon, ODTLoff,
ODTH4, ODTH8, tAON, and tAOF. The minimum R TT turn-on time (tAON [MIN]) is the
point at which the device leaves High-Z and ODT resistance begins to turn on. Maxi-
mum RTT turn-on time (tAON [MAX]) is the point at which ODT resistance is fully on.
Both are measured relative to ODTLon. The minimum R TT turn-off time (tAOF [MIN]) is
the point at which the device starts to turn off ODT resistance. The maximum R TT turn
off time (tAOF [MAX]) is the point at which ODT has reached High-Z. Both are measured
from ODTLoff.
When ODT is asserted, it must remain HIGH until ODTH4 is satisfied. If a WRITE com-
mand is registered by the DRAM with ODT HIGH, then ODT must remain HIGH until
ODTH4 (BC4) or ODTH8 (BL8) after the WRITE command (see Figure 114 (page 204)).
ODTH4 and ODTH8 are measured from ODT registered HIGH to ODT registered LOW
or from the registration of a WRITE command until ODT is registered LOW.
Table 90: Synchronous ODT Parameters
Definition for All

ODTLon ODT synchronous turn-on delay ODT registered HIGH RTT(ON) ±tAON CWL + AL - 2 tCK
ODTLoff ODT synchronous turn-off delay ODT registered HIGH RTT(OFF) ±tAOF CWL +AL - 2 tCK
ODTH4 ODT minimum HIGH time after ODT ODT registered HIGH or write regis- ODT registered LOW 4tCK tCK
assertion or WRITE (BC4) tration with ODT HIGH

ODTH8 ODT minimum HIGH time after WRITE Write registration with ODT HIGH ODT registered LOW 6tCK tCK
(BL8)
tAON ODT turn-on relative to ODTLon Completion of ODTLon RTT(ON) See Table 56 (page ps
completion 79)
tAOF ODT turn-off relative to ODTLoff Completion of ODTLoff RTT(OFF) 0.5tCK ± 0.2tCK tCK
completion
Figure 113: Synchronous ODT

203
CK#
CK
CKE
AL = 3 AL = 3 CWL - 2
ODT
ODTH4 (MIN) ODTLoff = CWL + AL - 2

ODTLon = CWL + AL - 2
tAON t
(MIN) AOF (MIN)

RTT RTT,nom
tAON tAOF (MAX)
(MAX)
Note: 1. AL = 3; CWL = 5; ODTLon = WL = 6.0; ODTLoff = WL - 2 = 6. RTT,nom is enabled.

Figure 114: Synchronous ODT (BC4)

CK#
CK
CKE
Command NOP NOP NOP NOP NOP NOP NOP WRS4 NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
ODTH4 ODTH4 (MIN)

ODTH4
ODT
ODTLoff = WL - 2 ODTLoff = WL - 2
ODTLon = WL - 2 ODTLon = WL - 2
tAON tAOF (MIN) tAON (MAX) tAOF

(MIN) (MIN)
RTT RTT,nom RTT,nom
tAON (MAX) tAON (MIN) tAOF (MAX)
tAOF (MAX)
Notes: 1. WL = 7. RTT,nom is enabled. RTT(WR) is disabled.

2. ODT must be held HIGH for at least ODTH4 after assertion (T1).
3. ODT must be kept HIGH ODTH4 (BC4) or ODTH8 (BL8) after the WRITE command (T7).
4. ODTH is measured from ODT first registered HIGH to ODT first registered LOW or from the registration of the
204
WRITE command with ODT HIGH to ODT registered LOW.

5. Although ODTH4 is satisfied from ODT registered HIGH at T6, ODT must not go LOW before T11 as ODTH4 must
also be satisfied from the registration of the WRITE command at T7.

ODT Off During READs

Because the device cannot terminate and drive at the same time, RTT must be disabled
at least one-half clock cycle before the READ preamble by driving the ODT ball LOW (if
either RTT,nom or RTT(WR) is enabled). RTT may not be enabled until the end of the post-
amble, as shown in the following example.
Note: ODT may be disabled earlier and enabled later than shown in Figure 115
(page 206).
Figure 115: ODT During READs

CK#
CK
Command READ NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
Address Valid
ODTLon = CWL + AL - 2
ODTLoff = CWL + AL - 2
ODT
tAOF (MIN)
RTT RTT,nom RTT,nom
tAOF (MAX) tAON (MAX)
RL = AL + CL
DQS, DQS#
DQ DI DI DI DI DI DI DI DI
b b+1 b+2 b+3 b+4 b+5 b+6 b+7
Note: 1. ODT must be disabled externally during READs by driving ODT LOW. For example, CL = 6; AL = CL - 1 = 5; RL = AL
+ CL = 11; CWL = 5; ODTLon = CWL + AL - 2 = 8; ODTLoff = CWL + AL - 2 = 8. RTT,nom is enabled. RTT(WR) is a “Don’t
Care.”
206

Asynchronous ODT Mode

Asynchronous ODT mode is available when the DRAM runs in DLL on mode and when
either RTT,nom or RTT(WR) is enabled; however, the DLL is temporarily turned off in pre-
charged power-down standby (via MR0[12]). Additionally, ODT operates asynchronous-
ly when the DLL is synchronizing after being reset. See Power-Down Mode (page 184)
for definition and guidance over power-down details.
In asynchronous ODT timing mode, the internal ODT command is not delayed by AL
relative to the external ODT command. In asynchronous ODT mode, ODT controls RTT
by analog time. The timing parameters tAONPD and tAOFPD replace ODTLon/tAON
and ODTLoff/tAOF, respectively, when ODT operates asynchronously.
The minimum RTT turn-on time (tAONPD [MIN]) is the point at which the device termi-
nation circuit leaves High-Z and ODT resistance begins to turn on. Maximum RTT turn-
on time (tAONPD [MAX]) is the point at which ODT resistance is fully on. tAONPD
(MIN) and tAONPD (MAX) are measured from ODT being sampled HIGH.
The minimum RTT turn-off time (tAOFPD [MIN]) is the point at which the device termi-
nation circuit starts to turn off ODT resistance. Maximum RTT turn-off time (tAOFPD
[MAX]) is the point at which ODT has reached High-Z. tAOFPD (MIN) and tAOFPD
(MAX) are measured from ODT being sampled LOW.
Figure 116: Asynchronous ODT Timing with Fast ODT Transition

CK#
CK
CKE
tIH tIS tIH tIS
ODT
tAONPD (MIN) tAOFPD (MIN)

RTT RTT,nom
tAONPD (MAX) tAOFPD (MAX)
Note: 1. AL is ignored.
Table 91: Asynchronous ODT Timing Parameters for All Speed Bins
Symbol Description Min Max Unit

tAONPD Asynchronous RTT turn-on delay (power-down with DLL off) 2 8.5 ns
tAOFPD Asynchronous RTT turn-off delay (power-down with DLL off) 2 8.5 ns
208

Synchronous to Asynchronous ODT Mode Transition (Power-Down Entry)

There is a transition period around power-down entry (PDE) where the DRAM’s ODT
may exhibit either synchronous or asynchronous behavior. This transition period oc-
curs if the DLL is selected to be off when in precharge power-down mode by the setting
MR0[12] = 0. Power-down entry begins tANPD prior to CKE first being registered LOW,
and ends when CKE is first registered LOW. tANPD is equal to the greater of ODTLoff +
1tCK or ODTLon + 1tCK. If a REFRESH command has been issued, and it is in progress
when CKE goes LOW, power-down entry ends tRFC after the REFRESH command, rath-
er than when CKE is first registered LOW. Power-down entry then becomes the greater
of tANPD and tRFC - REFRESH command to CKE registered LOW.
ODT assertion during power-down entry results in an RTT change as early as the lesser
of tAONPD (MIN) and ODTLon × tCK + tAON (MIN), or as late as the greater of tAONPD
(MAX) and ODTLon × tCK + tAON (MAX). ODT de-assertion during power-down entry
can result in an RTT change as early as the lesser of tAOFPD (MIN) and ODTLoff × tCK +
tAOF (MIN), or as late as the greater of tAOFPD (MAX) and ODTLoff × tCK + tAOF (MAX).
Table 92 (page 210) summarizes these parameters.

If AL has a large value, the uncertainty of the state of RTT becomes quite large. This is
because ODTLon and ODTLoff are derived from the WL; and WL is equal to CWL + AL.
Figure 117 (page 210) shows three different cases:
• ODT_A: Synchronous behavior before tANPD.
• ODT_B: ODT state changes during the transition period with tAONPD (MIN) <
ODTLon × tCK + tAON (MIN) and tAONPD (MAX) > ODTLon × tCK + tAON (MAX).
• ODT_C: ODT state changes after the transition period with asynchronous behavior.
Table 92: ODT Parameters for Power-Down (DLL Off) Entry and Exit Transition Period
Description Min Max

Power-down entry transition period Greater of: tANPD or tRFC - refresh to CKE LOW
(power-down entry)
Power-down exit transition period tANPD + tXPDLL
(power-down exit)
ODT to RTT turn-on delay Lesser of: tAONPD (MIN) (2ns) or Greater of: tAONPD (MAX) (8.5ns) or
(ODTLon = WL - 2) ODTLon × tCK + tAON (MIN) ODTLon × tCK + tAON (MAX)
ODT to RTT turn-off delay Lesser of: tAOFPD (MIN) (2ns) or Greater of: tAOFPD (MAX) (8.5ns) or
(ODTLoff = WL - 2) ODTLoff × tCK + tAOF (MIN) ODTLoff × tCK + tAOF (MAX)
tANPD WL - 1 (greater of ODTLoff + 1 or ODTLon + 1)
Figure 117: Synchronous to Asynchronous Transition During Precharge Power-Down (DLL Off) Entry
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 Ta0 Ta1 Ta2 Ta3

CK#
CK
CKE
210
Command NOP REF NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
tRFC (MIN)
tANPD
PDE transition period

ODT A
synchronous
tAOF (MIN)
DRAM RTT A RTT,nom

synchronous ODTLoff + tAOFPD (MIN)
ODTLoff tAOF (MAX)
tAOFPD (MAX)
ODT B
asynchronous

or synchronous
tAOFPD (MIN)
DRAM RTT B
RTT,nom
asynchronous
or synchronous ODTLoff + tAOFPD (MAX)
ODT C
asynchronous
tAOFPD (MIN)
DRAM RTT C RTT,nom
asynchronous
tAOFPD (MAX)
Indicates break
in time scale
Note: 1. AL = 0; CWL = 5; ODTL(off) = WL - 2 = 3.

Asynchronous to Synchronous ODT Mode Transition (Power-
Down Exit)
Asynchronous to Synchronous ODT Mode Transition (Power-Down Exit)

The DRAM’s ODT can exhibit either asynchronous or synchronous behavior during
power-down exit (PDX). This transition period occurs if the DLL is selected to be off
when in precharge power-down mode by setting MR0[12] to 0. Power-down exit begins
tANPD prior to CKE first being registered HIGH, and ends tXPDLL after CKE is first reg-
istered HIGH. tANPD is equal to the greater of ODTLoff + 1tCK or ODTLon + 1tCK. The
transition period is tANPD + tXPDLL.
ODT assertion during power-down exit results in an RTT change as early as the lesser of
tAONPD (MIN) and ODTLon × tCK + tAON (MIN), or as late as the greater of tAONPD
(MAX) and ODTLon × tCK + tAON (MAX). ODT de-assertion during power-down exit
may result in an RTT change as early as the lesser of tAOFPD (MIN) and ODTLoff × tCK +
tAOF (MIN), or as late as the greater of tAOFPD (MAX) and ODTLoff × tCK + tAOF (MAX).
Table 92 (page 210) summarizes these parameters.

If AL has a large value, the uncertainty of the RTT state becomes quite large. This is be-
cause ODTLon and ODTLoff are derived from WL, and WL is equal to CWL + AL. Figure
118 (page 212) shows three different cases:
• ODT C: Asynchronous behavior before tANPD.
• ODT B: ODT state changes during the transition period, with tAOFPD (MIN) < ODTL-
off × tCK + tAOF (MIN), and ODTLoff × tCK + tAOF (MAX) > tAOFPD (MAX).
• ODT A: ODT state changes after the transition period with synchronous response.
Figure 118: Asynchronous to Synchronous Transition During Precharge Power-Down (DLL Off) Exit
T0 T1 T2 Ta0 Ta1 Ta2 Ta3 Ta4 Ta5 Ta6 Tb0 Tb1 Tb2 Tc0 Tc1 Tc2 Td0 Td1
CK#
CK
CKE
COMMAND NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
tANPD tXPDLL
PDX transition period
ODT A
asynchronous
tAOFPD (MIN)
DRAM RTT A

RTT,nom
asynchronous
tAOFPD ODTLoff + tAOF (MIN)
(MAX)
ODT B tAOFPD (MAX)
asynchronous
or synchronous
RTT B tAOFPD (MIN)
asynchronous RTT,nom
or synchronous
ODTLoff + tAOF (MAX) ODTLoff tAOF (MAX)
ODT C
synchronous tAOF (MIN)
DRAM RTT C
RTT,nom
synchronous
212
Indicates break
in time scale
Note: 1. CL = 6; AL = CL - 1; CWL = 5; ODTLoff = WL - 2 = 8.

Down Exit)
Down Exit)
Asynchronous to Synchronous ODT Mode Transition (Short CKE Pulse)

If the time in the precharge power-down or idle states is very short (short CKE LOW
pulse), the power-down entry and power-down exit transition periods overlap. When
overlap occurs, the response of the DRAM’s RTT to a change in the ODT state can be
synchronous or asynchronous from the start of the power-down entry transition period
to the end of the power-down exit transition period, even if the entry period ends later
than the exit period.
If the time in the idle state is very short (short CKE HIGH pulse), the power-down exit
and power-down entry transition periods overlap. When this overlap occurs, the re-
sponse of the DRAM’s RTT to a change in the ODT state may be synchronous or asyn-
chronous from the start of power-down exit transition period to the end of the power-
down entry transition period.
Figure 119: Transition Period for Short CKE LOW Cycles with Entry and Exit Period Overlapping
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 Ta0 Ta1 Ta2 Ta3 Ta4

CK#
CK
Command REF NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
CKE
PDE transition period
tANPD
tRFC (MIN)

PDX transition period
tANPD tXPDLL
Short CKE low transition period (R TT change asynchronous or synchronous)
Indicates break
in time scale
214
Note: 1. AL = 0, WL = 5, tANPD = 4.
Figure 120: Transition Period for Short CKE HIGH Cycles with Entry and Exit Period Overlapping
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 Ta0 Ta1 Ta2 Ta3 Ta4

CK#
CK

Command NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
CKE
tANPD tXPDLL
tANPD
Short CKE HIGH transition period (RTT change asynchronous or synchonous)
Down Exit)
Indicates break
in time scale
Note: 1. AL = 0, WL = 5, tANPD = 4.
Down Exit)
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-4000

www.micron.com/products/support Sales inquiries: 800-932-4992
Micron and the Micron logo are trademarks of Micron Technology, Inc.
All other trademarks are the property of their respective owners.
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.
Although considered final, these specifications are subject to change, as further product development and data characterization some-
times occur.

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2Gb: x4, x8, x16 DDR3 SDRAM

Features Options1 Marking

Table 1: Key Timing Parameters

Notes: 1. Backward compatible to 1066, CL = 7 (-187E).

Parameter 512 Meg x 4 256 Meg x 8 128 Meg x 16

Figure 1: DDR3 Part Numbers

Package Speed Grade

-187E tCK = 1.87ns, CL = 7

FBGA Part Marking Decoder

Input Clock Frequency Change ...................................................................................................................... 127

ODT Off During READs .............................................................................................................................. 205

Figure 51: Mode Register 0 (MR0) Definitions ................................................................................................ 138

Figure 103: PRECHARGE to Power-Down Entry ............................................................................................. 190

Table 51: DDR3-1066 Speed Bins ................................................................................................................... 74

Figure 2: Simplified State Diagram

ACT = ACTIVATE PREA = PRECHARGE ALL SRX = Self refresh exit

Functional Block Diagrams

Figure 3: 512 Meg x 4 Functional Block Diagram

RAS# Bank 7 CK,CK#

Figure 4: 256 Meg x 8 Functional Block Diagram

RAS# OTF Bank 7 CK, CK#

CK, CK# Column 2

Figure 5: 128 Meg x 16 Functional Block Diagram

RAS# Bank 7 CK, CK#

CK, CK# Column 2

Ball Assignments and Descriptions

Figure 7: 96-Ball FBGA – x16 (Top View)

Note: 1. Ball descriptions listed in Table 4 (page 20).

Table 3: 78-Ball FBGA – x4, x8 Ball Descriptions

Symbol Type Description

Table 3: 78-Ball FBGA – x4, x8 Ball Descriptions (Continued)

Symbol Type Description

Table 4: 96-Ball FBGA – x16 Ball Descriptions

Symbol Type Description

Table 4: 96-Ball FBGA – x16 Ball Descriptions (Continued)

Symbol Type Description

Figure 8: 78-Ball FBGA – x4, x8 (DA)

0.8 TYP 1.1 ±0.1

Figure 9: 78-Ball FBGA – x4, x8 (EF)

0.8 TYP 1.1 ±0.1

6.4 CTR 0.29 MIN

Notes: 1. All dimensions are in millimeters.

Figure 10: 96-Ball FBGA – x16 (JT)

0.8 TYP 1.1 ±0.1

6.4 CTR 0.25 MIN

Notes: 1. All dimensions are in millimeters.

Figure 11: 96-Ball FBGA – x16 (TW)

0.8 TYP 1.1 ±0.1

6.4 CTR 0.34 ±0.05

Notes: 1. All dimensions are in millimeters.

Table 5: Absolute Maximum Ratings

Symbol Parameter Min Max Unit Notes

Table 6: DDR3 Input/Output Capacitance

Table 7: Thermal Characteristics

Parameter/Condition Value Unit Symbol Notes

Table 8: Thermal Impedance

Θ JA (°C/W) Θ JA (°C/W) Θ JA (°C/W)

Figure 12: Thermal Measurement Point

Electrical Specifications – IDD Specifications and Conditions