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    KVR16S11/4: Memory Module Specifi Cations

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    vsaa12
    This document describes the specifications of a 4GB DDR3-1600 CL11 204-pin SODIMM memory module from ValueRAM. The module uses sixteen 256M x 8-bit FBGA components running at 1.5V with CL11-11-11 timing. Key specifications include a CL of 11, tRC of 48.125ns, tRFC of 160ns, tRAS of 35ns, and maximum power of 2.580W. Features include JEDEC standard 1.5V power supply, 800MHz data rate, 8 banks, programmable CAS latency from 11-6, and burst lengths of 8 or 4.

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    KVR16S11/4: Memory Module Specifi Cations

    Uploaded by

    vsaa12
    21 views2 pages
    This document describes the specifications of a 4GB DDR3-1600 CL11 204-pin SODIMM memory module from ValueRAM. The module uses sixteen 256M x 8-bit FBGA components running at 1.5V with CL11-11-11 timing. Key specifications include a CL of 11, tRC of 48.125ns, tRFC of 160ns, tRAS of 35ns, and maximum power of 2.580W. Features include JEDEC standard 1.5V power supply, 800MHz data rate, 8 banks, programmable CAS latency from 11-6, and burst lengths of 8 or 4.

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    KVR

    Original Title

    KVR16S11_4

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    This document describes the specifications of a 4GB DDR3-1600 CL11 204-pin SODIMM memory module from ValueRAM. The module uses sixteen 256M x 8-bit FBGA components running at 1.5V with CL11-11-11 timing. Key specifications include a CL of 11, tRC of 48.125ns, tRFC of 160ns, tRAS of 35ns, and maximum power of 2.580W. Features include JEDEC standard 1.5V power supply, 800MHz data rate, 8 banks, programmable CAS latency from 11-6, and burst lengths of 8 or 4.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    21 views2 pages

    KVR16S11/4: Memory Module Specifi Cations

    Uploaded by

    vsaa12
    This document describes the specifications of a 4GB DDR3-1600 CL11 204-pin SODIMM memory module from ValueRAM. The module uses sixteen 256M x 8-bit FBGA components running at 1.5V with CL11-11-11 timing. Key specifications include a CL of 11, tRC of 48.125ns, tRFC of 160ns, tRAS of 35ns, and maximum power of 2.580W. Features include JEDEC standard 1.5V power supply, 800MHz data rate, 8 banks, programmable CAS latency from 11-6, and burst lengths of 8 or 4.

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    Memory Module Specications

    KVR16S11/4
    4GB 2Rx8 512M x 64-Bit PC3-12800 CL11 204-Pin SODIMM
    DESCRIPTION
    This document describes ValueRAM's 512M x 64-bit (4GB) DDR3-1600 CL11 SDRAM (Synchronous DRAM) 2Rx8, memory module, based on sixteen 256M x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1600 timing of 11-11-11 at 1.5V. This 204-pin SODIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:

    SPECIFICATIONS
    CL(IDD) Row Cycle Time (tRCmin) Refresh to Active/Refresh Command Time (tRFCmin) Row Active Time (tRASmin) Maximum Operating Power UL Rating Operating Temperature Storage Temperature 11 cycles 48.125ns (min.) 160ns (min.) 35ns (min.) 2.580 W* 94 V - 0 0o C to 85o C -55o C to +100o C

    FEATURES
    JEDEC standard 1.5V (1.425V ~1.575V) Power Supply VDDQ = 1.5V (1.425V ~ 1.575V) 800MHz fCK for 1600Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 11, 10, 9, 8, 7, 6 Programmable Additive Latency: 0, CL - 2, or CL - 1 clock 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] Bi-directional Differential Data Strobe Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm 1%) On Die Termination using ODT pin Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < TCASE < 95C Asynchronous Reset PCB : Height 1.180 (30.00mm), double sided component

    *Power will vary depending on the SDRAM used.

    Continued >>

    Document No. VALUERAM1166-001.A00

    04/30/12

    Page 1

    MODULE DIMENSIONS:

    (units = millimeters)

    Document No. VALUERAM1166-001.A00

    Page 2

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