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    NPN RF Transistor: Symbol Parameter Value Units

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    AdnanDeğerliyurt
    These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. The factory should be consulted on applications involving pulsed or low Duty Cycle operations.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    NPN RF Transistor: Symbol Parameter Value Units

    Uploaded by

    AdnanDeğerliyurt
    40 views4 pages
    These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. The factory should be consulted on applications involving pulsed or low Duty Cycle operations.

    Original Title

    BF240

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    © © All Rights Reserved

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    These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. The factory should be consulted on applications involving pulsed or low Duty Cycle operations.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    40 views4 pages

    NPN RF Transistor: Symbol Parameter Value Units

    Uploaded by

    AdnanDeğerliyurt
    These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. The factory should be consulted on applications involving pulsed or low Duty Cycle operations.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    2003 Fairchild Semiconductor Corporation Rev.

    A, September 2003
    B
    F
    2
    4
    0
    Absolute Maximum Ratings* T
    a
    =25C unless otherwise noted
    * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
    NOTES:
    1) These ratings are based on a maximum junction temperature of 150 degrees C.
    2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
    Electrical Characteristics T
    a
    =25C unless otherwise noted
    * Pulse Test: Pulse Width 300s, Duty Cycle 2.0%
    Thermal Characteristics T
    A
    =25C unless otherwise noted
    Symbol Parameter Value Units
    V
    CEO
    Collector-Emitter Voltage 40 V
    V
    CBO
    Collector-Base Voltage 40 V
    V
    EBO
    Emitter-Base Voltage 4.0 V
    I
    C
    Collector Current - Continuous 50 mA
    T
    J
    , T
    STG
    Operating and Storage Junction Temperature Range - 55 ~ 150 C
    Symbol Parameter Test Condition Min. Max. Units
    Off Characteristics
    V
    (BR)CEO
    Collector-Emitter Breakdown Voltage * I
    C
    = 1.0mA, I
    B
    = 0 40 V
    V
    (BR)CBO
    Collector-Base BreakdownVoltage I
    C
    = 100A, I
    E
    = 0 40 V
    V
    (BR)EBO
    Emitter-Base Breakdown Voltage I
    E
    = 10A, I
    C
    = 0 4.0 V
    I
    CBO
    Collector Cut-off Current V
    CB
    = 20V, I
    E
    = 0 100 nA
    On Characteristics
    h
    FE
    DC Current Gain I
    C
    = 1mA, V
    CE
    = 10V 65 225
    V
    CE
    (sat) Collector-Emitter Saturation Voltage I
    C
    = 1mA, I
    B
    = 0.1mA 0.65 V
    V
    BE
    (sat) Base-Emitter Saturation Voltage I
    C
    = 1mA, I
    B
    = 0.1mA 0.74 V
    Small Signal Characteristics
    f
    T
    Current gain Bandwidth Product I
    C
    = 7.0mA, V
    CE
    = 10V,
    f = 100MHz
    1100 MHz
    C
    re
    Common-Emitter Ruerse
    Transfer Capacitance
    V
    CB
    = 10V, I
    E
    = 0, f = 1.0MHz 0.34 pF
    Symbol Parameter Max. Units
    P
    D
    Total Device Dissipation
    Derate above 25C
    350
    2.8
    mW
    mW/C
    R
    JC
    Thermal Resistance, Junction to Case 125 C/W
    R
    JA
    Thermal Resistance, Junction to Ambient 357 C/W
    BF240
    NPN RF Transistor
    TO-92
    1. Collector 2. Emitter 3. Base
    1
    0.46 0.10
    1.27TYP
    (R2.29)
    3
    .
    8
    6
    M
    A
    X
    [1.27 0.20]
    1.27TYP
    [1.27 0.20]
    3.60 0.20
    1
    4
    .
    4
    7

    0
    .
    4
    0
    1
    .
    0
    2

    0
    .
    1
    0
    (
    0
    .
    2
    5
    )
    4
    .
    5
    8

    0
    .
    2
    0
    4.58
    +0.25
    0.15
    0.38
    +0.10
    0.05
    0
    .
    3
    8
    +
    0
    .
    1
    0

    0
    .
    0
    5
    TO-92
    Package Dimensions
    B
    F
    2
    4
    0
    Dimensions in Millimeters
    2003 Fairchild Semiconductor Corporation Rev. A, September 2003
    2003 Fairchild Semiconductor Corporation Rev. I5
    TRADEMARKS
    The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
    intended to be an exhaustive list of all such trademarks.
    DISCLAIMER
    FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
    PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
    LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
    NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
    LIFE SUPPORT POLICY
    FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
    DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
    CORPORATION.
    As used herein:
    1. Life support devices or systems are devices or systems
    which, (a) are intended for surgical implant into the body,
    or (b) support or sustain life, or (c) whose failure to perform
    when properly used in accordance with instructions for use
    provided in the labeling, can be reasonably expected to
    result in significant injury to the user.
    2. A critical component is any component of a life support
    device or system whose failure to perform can be
    reasonably expected to cause the failure of the life support
    device or system, or to affect its safety or effectiveness.
    PRODUCT STATUS DEFINITIONS
    Definition of Terms
    Datasheet Identification Product Status Definition
    Advance Information Formative or In
    Design
    This datasheet contains the design specifications for
    product development. Specifications may change in
    any manner without notice.
    Preliminary First Production This datasheet contains preliminary data, and
    supplementary data will be published at a later date.
    Fairchild Semiconductor reserves the right to make
    changes at any time without notice in order to improve
    design.
    No Identification Needed Full Production This datasheet contains final specifications. Fairchild
    Semiconductor reserves the right to make changes at
    any time without notice in order to improve design.
    Obsolete Not In Production This datasheet contains specifications on a product
    that has been discontinued by Fairchild semiconductor.
    The datasheet is printed for reference information only.
    FACT Quiet Series
    FAST

    FASTr
    FRFET
    GlobalOptoisolator
    GTO
    HiSeC
    I
    2
    C
    ImpliedDisconnect
    ISOPLANAR
    LittleFET
    MICROCOUPLER
    MicroFET
    MicroPak
    MICROWIRE
    MSX
    MSXPro
    OCX
    OCXPro
    OPTOLOGIC

    OPTOPLANAR
    PACMAN
    POP
    Power247
    PowerTrench

    QFET

    QS
    QT Optoelectronics
    Quiet Series
    RapidConfigure
    RapidConnect
    SILENT SWITCHER

    SMART START
    SPM
    Stealth
    SuperSOT-3
    SuperSOT-6
    SuperSOT-8
    SyncFET
    TinyLogic

    TINYOPTO
    TruTranslation
    UHC
    UltraFET

    VCX
    ACEx
    ActiveArray
    Bottomless
    CoolFET
    CROSSVOLT
    DOME
    EcoSPARK
    E
    2
    CMOS
    EnSigna
    FACT
    Across the board. Around the world.
    The Power Franchise
    Programmable Active Droop
    This datasheet has been download from:
    www.datasheetcatalog.com
    Datasheets for electronics components.

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