BC237

BC237/238/239
BC237/238/239
Switching and Amplifier Applications
Low Noise: BC239
TO-92
NPN Epitaxial Silicon Transistor
1. Collector 2. Base 3. Emitter
Absolute Maximum Ratings Ta=25C unless otherwise noted

Symbol
VCES
Collector-Emitter Voltage
Parameter
: BC237
: BC238/239
Value
50
30
Units
V
V
VCEO
Collector-Emitter Voltage
: BC237
: BC238/239
45
25
V
V
VEBO
Emitter-Base Voltage
: BC237
: BC238/239
6
5
V
V
IC
Collector Current (DC)
100
mA
PC
Collector Dissipation
500
mW
TJ
Junction Temperature
150
TSTG
Storage Temperature
-55 ~ 150
Electrical Characteristics Ta=25C unless otherwise noted

Symbol
BVCEO
BVEBO
Parameter
Collector-Emitter Breakdown Voltage
: BC237
: BC238/239
Test Condition
IC=2mA, IB=0
Emitter Base Breakdown Voltage

: BC237
: BC238/239
IE=1A, IC=0
Collector Cut-off Current

: BC237
: BC238/239
ICES
Min.
Typ.
Max.
Units
45
25
V
V
6
5
V
V
0.2
0.2
VCE=50V, VBE=0
VCE=30V, VBE=0
15
15
120
nA
nA
hFE
DC Current Gain
VCE=5V, IC=2mA
VCE (sat)
Collector-Emitter Saturation Voltage
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
0.07
0.2
800
0.2
0.6
V
V
VBE (sat)
Collector-Base Saturation Voltage
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
0.73
0.87
0.83
1.05
V
V
0.55
0.62
0.7
150
85
250
VBE (on)
Base-Emitter On Voltage
VCE=5V, IC=2mA
fT
Current Gain Bandwidth Product
VCE=3V, IC=0.5mA, f=100MHz

VCE=5V, IC=10mA, f=100MHz
Cob
Output Capacitance
VCB=10V, IE=0, f=1MHz
3.5
Cib
Input Base Capacitance
VEB=0.5V, IC=0, f=1MHz
NF
Noise Figure
VCE=5V, IC=0.2mA,
f=1KHz RG=2K
VCE=5V, IC=0.2mA
RG=2K, f=30~15KHz
: BC237/238
: BC239
: BC239
V
MHz
MHz
pF
pF
10
4
4
dB
dB
dB
hFE Classification
Classification
hFE
120 ~ 220
180 ~ 460
380 ~ 800
2000 Fairchild Semiconductor International
Rev. B, January 2001
BC237/238/239
Typical Characteristics
100
IB = 400 A
VCE = 5V
IC[mA], COLLECTOR CURRENT
100
IB = 350 A
IB = 300 A
80
IB = 250 A
60
IB = 200 A
40
IB = 150 A
IB = 100 A
20
10
IB = 50 A
0
0
10
12
14
16
18
0.1
0.0
20
VCE[V], COLLECTOR-EMITTER VOLTAGE
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
hFE, DC CURRENT GAIN
1000
100
10
1
100
0.8
1.0
1.2
10000
IC = 10 IB
V BE(sat)
1000
100
V CE(sat)
10
1000
10
100
1000
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage
1000
f=1MHz
IE = 0
10
0.1
1
10
100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Output Capacitance
1000
fT, CURRENT GAIN-BANDWIDTH PRODUCT
100
Cob[pF], CAPACITANCE
0.6
Figure 2. Transfer Characteristic
VCE = 5V
10
0.4
VBE[V], BASE-EMITTER VOLTAGE
Figure 1. Static Characteristic
0.2
VCE = 5V
100
10
1
0.1
10
100
Figure 6. Current Gain Bandwidth Product
BC237/238/239
Package Demensions
TO-92
+0.25
4.58 0.20
4.58 0.15
0.10
14.47 0.40
0.46
1.27TYP
[1.27 0.20]
1.27TYP
[1.27 0.20]
0.20
(0.25)
+0.10
0.38 0.05
1.02 0.10
3.86MAX
3.60
+0.10
0.38 0.05
(R2.29)
Dimensions in Millimeters
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx
Bottomless
CoolFET
CROSSVOLT
E2CMOS
FACT
FACT Quiet Series
FAST
FASTr
GTO
HiSeC
ISOPLANAR
MICROWIRE
POP
PowerTrench
QFET
QS
Quiet Series
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
UHC
VCX
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support

device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. E

BC237

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BC237/238/239

NPN Epitaxial Silicon Transistor

1. Collector 2. Base 3. Emitter

Absolute Maximum Ratings Ta=25C unless otherwise noted

Collector Current (DC)

Electrical Characteristics Ta=25C unless otherwise noted

Emitter Base Breakdown Voltage

Collector Cut-off Current

Collector-Emitter Saturation Voltage

Collector-Base Saturation Voltage

Current Gain Bandwidth Product

VCE=3V, IC=0.5mA, f=100MHz

VCB=10V, IE=0, f=1MHz

Input Base Capacitance

VEB=0.5V, IC=0, f=1MHz

2000 Fairchild Semiconductor International

Rev. B, January 2001

IC[mA], COLLECTOR CURRENT

IC[mA], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE

hFE, DC CURRENT GAIN

IC[mA], COLLECTOR CURRENT

IC[mA], COLLECTOR CURRENT

Figure 3. DC current Gain

Figure 4. Base-Emitter Saturation Voltage

VCB[V], COLLECTOR-BASE VOLTAGE

Figure 5. Output Capacitance

2000 Fairchild Semiconductor International

fT, CURRENT GAIN-BANDWIDTH PRODUCT

Figure 2. Transfer Characteristic

VBE[V], BASE-EMITTER VOLTAGE

Figure 1. Static Characteristic

IC[mA], COLLECTOR CURRENT

Figure 6. Current Gain Bandwidth Product

Rev. B, January 2001

Rev. B, January 2001

LIFE SUPPORT POLICY

2. A critical component is any component of a life support

PRODUCT STATUS DEFINITIONS

This datasheet contains the design specifications for

This datasheet contains preliminary data, and

This datasheet contains final specifications. Fairchild

This datasheet contains specifications on a product

2000 Fairchild Semiconductor International

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