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    Lady Guerrero
    TYN210 ---> TYN1010 Family of Silicon Controlled Rectifiers uses a high performance glass passivated technology. Designed for power supplies up to 400Hz on resistive or inductive load.

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    Imprimir SCR Pag 1

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    Lady Guerrero
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    TYN210 ---> TYN1010 Family of Silicon Controlled Rectifiers uses a high performance glass passivated technology. Designed for power supplies up to 400Hz on resistive or inductive load.

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    TYN210 ---> TYN1010 Family of Silicon Controlled Rectifiers uses a high performance glass passivated technology. Designed for power supplies up to 400Hz on resistive or inductive load.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    77 views4 pages

    Imprimir SCR Pag 1

    Uploaded by

    Lady Guerrero
    TYN210 ---> TYN1010 Family of Silicon Controlled Rectifiers uses a high performance glass passivated technology. Designed for power supplies up to 400Hz on resistive or inductive load.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    TYN210 ---> TYN1010

    SCR

    FEATURES High surge capability High on-state current High stability and reliability
    I I I

    G K

    DESCRIPTION The TYN210 ---> TYN1010 Family of Silicon Controlled Rectifiers uses a high performance glass passivated technology. This general purpose Family of Silicon Controlled Rectifiers is designed for power supplies up to 400Hz on resistive or inductive load.

    G
    TO-220AB

    ABSOLUTE RATINGS (limiting values)


    Symbol IT(RMS) IT(AV) ITSM I2t dI/dt Tstg Tj Tl Parameter RMS on-state current (180 conduction angle) Average on-state current (180 conduction angle, single phase circuit) Non repetitive surge peak on-state current (Tj initial = 25C) I2t value Critical rate of rise of on-state current Gate supply: IG = 100mA dIG/dt = 1A/s Storage and operating junction temperature range Maximum lead soldering temperature during 10s at 4.5mm from case Tc = 100C Tc = 100C tp = 8.3ms tp = 10ms tp = 10ms Value 10 6.4 105 100 50 50 -40 to +150 -40 to +125 260 A2s A/s C C Unit A A A

    TYN Symbol VDRM VRRM Parameter 210 Repetitive peak off-state voltage Tj = 125C 200 410 400 610 600 810 800 1010 1000 V Unit

    September 2001 - Ed: 1A

    1/4

    TYN210 ---> TYN1010


    THERMAL RESISTANCE
    Symbol Rth (j-a) Rth (j-c) DC Junction to ambient Junction to case for DC Parameter Value 60 2.5 Unit C/W C/W

    GATE CHARACTERISTICS (maximum values) PG(AV) = 1W PGM = 10W (tp = 20s) IFGM = 4A (tp = 20s) ELECTRICAL CHARACTERISTICS
    Symbol IGT VGT VGD tgt IL IH VTM IDRM IRRM dV/dt tq VD = 12V (DC) VD = 12V (DC) VD = VDRM RL = 33 RL = 33 RL = 3.3k Test conditions Tj = 25C Tj = 25C Tj =110C Tj = 25C Tj = 25C Tj = 25C Tj = 25C Tj = 25C Tj = 110C Linear slope up to VD = 67% VDRM gate open VD=67%VDRM ITM= 20A VR= 25V dITM/dt=30 A/s dVD/dt= 50V/s Tj = 110C Tj = 110C

    VRGM = 5V

    Value MAX. MAX. MIN. TYP. TYP. MAX. MAX. MAX. MAX. MIN. TYP. 15 1.5 0.2 2 50 30 1.6 0.01 2 200 70

    Unit mA V V s mA mA V mA

    VD = VDRM IG = 40mA dIG/dt = 0.5A/s IG = 1.2IGT IT = 100mA Gate open ITM = 20A VDRM rated VRRM rated tp = 380s

    V/s s

    Fig. 1: Maximum average power dissipation versus average on-state current.

    Fig. 2: Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact.
    P (W) Tcase (o C)
    Rth = 0 o C/W 2 o C/W 4 o C/W 6 o C/W

    P (W)
    12
    360
    O

    12 10
    DC

    10 8
    = 180
    o

    -100 -105 -110

    8 6
    = 180
    o

    6
    = 120
    o

    4
    = 60
    o

    = 90

    4 2
    Tamb ( C)
    o

    -115 -120 -125 140

    2
    = 30 o

    IT(AV)(A)

    0 0

    0 0

    20

    40

    60

    80

    100

    120

    2/4

    TYN210 ---> TYN1010


    Fig. 3: Average on-state current versus case temperature.
    I T(AV) (A)

    Fig. 4: Relative variation of thermal impedance versus pulse duration.


    Zth/Rth 1

    12
    DC

    10 8 6 4 2
    Tcase ( C)
    o o

    Zth(j-c)

    0.1

    = 180

    Zth(j-a)

    tp(s)

    10

    20

    30

    40

    50

    60

    70

    80

    90 100 110 120 130

    0.01 1E-3

    1E-2

    1E-1

    1E+0

    1E+1

    1E+2 5E+2

    Fig. 5: Relative variation of gate trigger current versus junction temperature.

    Fig. 6: Non repetitive surge peak on-state current versus number of cycles.

    Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width: t 10ms, and corresponding value of I2t.

    Fig. 8: On-state characteristics (maximum values).

    3/4

    TYN210 ---> TYN1010


    PACKAGE MECHANICAL DATA TO-220AB (Plastic) DIMENSIONS REF.
    B C

    Millimeters 15.20 3.75 13.00 10.00 0.61 1.23 4.40 0.49 2.40 2.40 6.20 3.75 2.65 1.14 1.14 2.60 14.00 0.511 10.40 0.393 0.88 0.024 1.32 0.048 4.60 0.173 0.70 0.019 2.72 0.094 2.70 0.094 6.60 0.244 3.85 0.147 2.95 0.104 1.70 0.044 1.70 0.044 15.90 0.598

    Inches 0.625 0.147 0.551 0.409 0.034 0.051 0.181 0.027 0.107 0.106 0.259 0.151 0.116 0.066 0.066 0.102

    Min. Typ. Max. Min. Typ. Max. A a1 a2


    F

    b2

    I A

    B b1 b2 C c1 c2 e F I I4 L

    l4

    a1

    c2

    l3
    l2 a2

    15.80 16.40 16.80 0.622 0.646 0.661

    b1 e

    M c1

    l2 l3 M

    OTHER INFORMATION
    Ordering type TYNxx10
    I I I I

    Marking TYNxx10

    Package TO-220AB

    Weight 2.3 g

    Base qty 250

    Delivery mode Bulk

    Epoxy meets UL94,V0 Cooling method: C Recommended torque value: 0.8 m.N. Maximum torque value: 1 m.N.

    Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

    The ST logo is a registered trademark of STMicroelectronics 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4

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