Datasheet SCR Do Tipo BTW67 e 69

BTW67 and BTW69 Series
STANDARD
50A SCRs
MAIN FEATURES:
Symbol IT(RMS) V DRM/VRRM IGT Value 50 600 to 1200 80 Unit A V mA
DESCRIPTION Available in high power packages, the BTW67 / BTW69 Series is suitable in applications where power handling and power dissipation are critical, such as solid state relays, welding equipment, high power motor control. Based on a clip assembly technology, they offer a superior performance in surge current handling capabilities. Thanks to their internal ceramic pad, they provide high voltage insulation (2500V RMS), complying with UL standards (file ref: E81734). ABSOLUTE RATINGS (limiting values)
Symbol IT(RMS) RMS on-state current (180 conduction angle) Average on-state current (180 conduction angle) Non repetitive surge peak on-state current Parameter RD91 TOP3 Ins. RD91 TOP3 Ins. tp = 8.3 ms Tj = 25C tp = 10 ms I t dI/dt IGM PG(AV) Tstg Tj VRGM It Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range Maximum peak reverse gate voltage F = 60 Hz tp = 20 s Tj = 25C Tj = 125C Tj = 125C Tj = 125C 580 1680 50 8 1 - 40 to + 150 - 40 to + 125 5 A2 S A/s A W C V 1/5 Tc = 70C 50 Tc = 75C Tc = 70C 32 Tc = 75C 610 A A A Value Unit
RD91 (BTW67)
TOP3 (BTW69)
IT(AV)
ITSM
April 2001 - Ed: 4

ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified)
Symbol IGT VD = 12 V VGT VGD IH IL dV/dt VTM Vt0 Rd IDRM IRRM VD = VDRM RL = 3.3 k IT = 500 mA IG = 1.2 I GT VD = 67 % VDRM Gate open ITM = 100 A tp = 380 s Tj = 125C Tj = 25C Tj = 125C Tj = 125C Tj = 25C Tj = 125C Gate open Tj = 125C RL = 33 Test Conditions MIN. MAX. MAX. MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. Value 8 80 1.3 0.2 150 200 1000 1.9 1.0 8.5 10 5 mA V V mA mA V/s V V m A mA Unit
Threshold voltage Dynamic resistance VDRM = VRRM
THERMAL RESISTANCES
Symbol Rth(j-c) Rth(j-a) Junction to case (DC) Junction to ambient Parameter RD91 (Insulated) TOP3 Insulated TOP3 Insulated Value 1.0 0.9 50 C/W Unit C/W
PRODUCT SELECTOR
Voltage (xxx) Part Number 600 V BTW67-xxx BTW69-xxx X X 800 V X X 1200 V X X 80 mA 80 mA RD91 TOP3 Ins. Sensitivity Package
ORDERING INFORMATION
OTHER INFORMATION
Part Number BTW67-xxx BTW69-xxx
Note: xxx = voltage
Marking BTW67xxx BTW69xxx
Weight 20.0 g 4.5 g
Base Quantity 25 120
Packing mode Bulk Bulk
2/5
Fig. 1: Maximum average power dissipation versus average on-state current.
Fig. 2: Average and D.C. on-state current versus case temperature.
Fig. 3: Relative variation of thermal impedance versus pulse duration.
Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature.
Fig. 5: Surge peak on-state current versus number of cycles.
Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of It.
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Fig. 7: values).
On-state
characteristics
(maximum
PACKAGE MECHANICAL DATA RD91 (Plastic)

DIMENSIONS REF. Millimeters Min. A A1 A2 B B1 B2 C C1 C2 E3 F I L1 L2 N1 N2 29.90 Max. 40.00 30.30 22.00 27.00 16.50 24.00 14.00 3.50 3.00 0.90 4.50 13.60 3.50 1.90 43 38 Min. 1.177 Inches Max. 1.575 1.193 0.867 1.063 0.650 0.945 0.551 0.138 0.118 0.035 0.177 0.535 0.138 0.075 43 38
13.50
0.531
1.95 0.70 4.00 11.20 3.10 1.70 33 28
0.077 0.027 0.157 0.441 0.122 0.067 33 28
4/5

PACKAGE MECHANICAL DATA TOP3 Ins.(Plastic)
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 2001 STMicroelectronics - Printed in Italy - All rights reserved . STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia-Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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Datasheet SCR Do Tipo BTW67 e 69

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BTW67 and BTW69 Series

April 2001 - Ed: 4

BTW67 and BTW69 Series

Threshold voltage Dynamic resistance VDRM = VRRM

Marking BTW67xxx BTW69xxx

Weight 20.0 g 4.5 g

Base Quantity 25 120

Packing mode Bulk Bulk

BTW67 and BTW69 Series

Fig. 1: Maximum average power dissipation versus average on-state current.

Fig. 2: Average and D.C. on-state current versus case temperature.

Fig. 3: Relative variation of thermal impedance versus pulse duration.

Fig. 5: Surge peak on-state current versus number of cycles.

BTW67 and BTW69 Series

PACKAGE MECHANICAL DATA RD91 (Plastic)

1.95 0.70 4.00 11.20 3.10 1.70 33 28

0.077 0.027 0.157 0.441 0.122 0.067 33 28

BTW67 and BTW69 Series

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