TRIAC Bta41

BTA40 and BTA/BTB41 Series
40A TRIACS
STANDARD
MAIN FEATURES:
A2
Symbol
Value
Unit
IT(RMS)
40
VDRM/VRRM
600 and 800
IGT (Q1)
50
mA
DESCRIPTION
Available in high power packages, the BTA/
BTB40-41 series is suitable for general purpose
AC power switching. They can be used as an ON/
OFF function in applications such as static relays,
heating regulation, water heaters, induction motor
starting circuits, welding equipment... or for phase
control operation in high power motor speed controllers, soft start circuits...
Thanks to their clip assembly technique, they
provide a superior performance in surge current
handling capabilities.
By using an internal ceramic pad, the BTA series
provides voltage insulated tab (rated at 2500 V
RMS) complying with UL standards (File ref.:
E81734).
A1
A1
G
A2
RD91
(BTA40)
A1 A2
A2
A1 A2
TOP3 Insulated
(BTA41)
TOP3
(BTB41)
ABSOLUTE MAXIMUM RATINGS

Symbol
IT(RMS)
ITSM
It
dI/dt
Parameter
RMS on-state current
(full sine wave)
Non repetitive surge peak on-state

current (full cycle, Tj initial = 25C)
I t Value for fusing

Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns
VDSM/VRSM Non repetitive surge peak off-state

voltage
IGM
PG(AV)
Tstg
Tj
Peak gate current

Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
October 2001 - Ed: 4
Value
RD91
Tc = 80C
TOP3
A
40
TOP3 Ins.
Tc = 70C
F = 60 Hz
t = 16.7 ms
420
F = 50 Hz
t = 20 ms
400
tp = 10 ms
Unit
880
A s
F = 120 Hz
Tj = 125C
50
A/s
tp = 10 ms
Tj = 25C
VDRM/VRRM
tp = 20 s
Tj = 125C
Tj = 125C
- 40 to + 150
- 40 to + 125
+ 100
1/6

ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified)
Symbol
Test Conditions
IGT (1)
VD = 12 V
Quadrant
RL = 33
VD = VDRM RL = 3.3 k
IH (2)
IT = 500 mA
IL
IG = 1.2 IGT
Unit
I - II - III
IV
MAX.
50
100
mA
ALL
MAX.
1.3
ALL
MIN.
0.2
MAX.
80
mA
70
mA
VGT
VGD
Value
Tj = 125C
I - III - IV
MAX.
II
160
VD = 67 % VDRM gate open Tj = 125C
dV/dt (2)
(dV/dt)c (2) (dI/dt)c = 20 A/ms
Tj = 125C
MIN.
500
V/s
MIN.
10
V/s
STATIC CHARACTERISTICS
Symbol
VTM (2)
Test Conditions
ITM = 60 A
tp = 380 s
Tj = 25C
Value
Unit
MAX.
1.55
Vto (2)
Threshold voltage
Tj = 125C
MAX.
0.85
Rd (2)
Dynamic resistance
Tj = 125C
MAX.
10
IDRM
VDRM = VRRM
Tj = 25C
mA
Value
Unit
IRRM
MAX.
Tj = 125C
Note 1: minimum IGT is guaranted at 5% of IGT max.

Note 2: for both polarities of A2 referenced to A1
THERMAL RESISTANCES
Symbol
Parameter
Junction to case (AC)
Rth(j-c)
RD91 (Insulated)
TOP3
0.9
TOP3 Insulated
1.2
Junction to ambient
Rth(j-a)
TOP3
TOP3 Insulated
50
C/W
C/W
PRODUCT SELECTOR
Voltage (xxx)
Part Number
Sensitivity
Type
Package
50 mA
Standard
RD91
50 mA
Standard
TOP3
600 V
800 V
BTA40-xxxB
BTA/BTB41-xxxB
BTB: Non insulated TOP3 package
2/6

ORDERING INFORMATION
BT A 40 -
600 B
TRIAC
SERIES
SENSITIVITY:
B: 50mA
INSULATION:
A: insulated
B: non insulated
VOLTAGE:
600: 600V
800: 800V
CURRENT:
40: 40A in RD91
41: 40A in TOP3
OTHER INFORMATION
Part Number
Marking
Weight
Base
quantity
Packing
mode
BTA40-xxxB
BTA40xxxB
20.0 g
25
Bulk
BTA/BTB41-xxxB
BTA/BTB41xxxB
4.5 g
120
Bulk
Note: xxx= voltage
Fig. 1: Maximum power dissipation versus RMS

on-state current (full cycle).
50
P (W)
40
30
20
10
IT(RMS) (A)
0
Fig. 2: RMS on-state current versus case

temperature (full cycle).
10
15
20
25
30
35
40
45
40
35
30
25
20
15
10
5
0
IT(RMS) (A)
BTA40/BTB41
BTA41
Tc(C)
0
25
50
75
100
125
3/6
Fig. 3: Relative variation of thermal impedance

versus pulse duration.
Fig. 4:
values).
On-state
characteristics
(maximum
ITM (A)
K=[Zth/Rth]
400
1E+0
Zth(j-c)
Tj max
100
1E-1
Zth(j-a)
BTA/BTB41
Tj=25C
10
1E-2
tp (s)
1E-3
1E-3
1E-2
1E-1
1E+0
VTM (V)
1E+1
1E+2 5E+2
Fig. 5: Surge peak on-state current versus

number of cycles.
1
0.5
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
ITSM (A), It (As)

3000
ITSM
t=20ms
One cycle
Non repetitive
Tj initial=25C
1000
dI/dt limitation:
50A/s
It
Repetitive
Tc=70C
tp (ms)
Number of cycles
1
10
100
1000
Fig. 7: Relative variation of gate trigger current,

holding current and latching current versus
junction temperature (typical values).
100
0.01
0.10
1.00
10.00
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

2.0
1.8
2.0
1.6
IGT
1.4
1.5
1.2
IH & IL
1.0
1.0
0.8
0.5
0.6
Tj(C)
0.0
-40
Tj initial=25C
Fig. 8: Relative variation of critical rate of decrease

of main current versus (dV/dt)c (typical values).
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25C]

2.5
4/6
1.0
Fig. 6: Non-repetitive surge peak on-state

current for a sinusoidal pulse with width
tp < 10 ms, and corresponding value of It.
ITSM (A)
450
400
350
300
250
200
150
100
50
0
Tj max.:
Vto = 0.85 V
Rd = 10 m
-20
20
40
60
80
100
120
140
0.4
0.1
(dV/dt)c (V/s)
1.0
10.0
100.0
Fig. 9: Relative variation of critical rate of

decrease of main current versus junction
temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
6
5
4
3
2
1
0
Tj (C)
0
25
50
75
100
125
PACKAGE MECHANICAL DATA

RD91 (Plastic)
DIMENSIONS
L2
A2
L1
REF.
Millimeters
Min.
B2
B1
C2
C1
A1
N2
N1
B
F
E3
I
A
A
A1
A2
B
B1
B2
C
C1
C2
E3
F
I
L1
L2
N1
N2
29.90
13.50
1.95
0.70
4.00
11.20
3.10
1.70
33
28
Max.
40.00
30.30
22.00
27.00
16.50
24.00
14.00
3.50
3.00
0.90
4.50
13.60
3.50
1.90
43
38
Inches
Min.
1.177
0.531
0.077
0.027
0.157
0.441
0.122
0.067
33
28
Max.
1.575
1.193
0.867
1.063
0.650
0.945
0.551
0.138
0.118
0.035
0.177
0.535
0.138
0.075
43
38
5/6

PACKAGE MECHANICAL DATA
TOP3 Ins.(Plastic)
DIMENSIONS
REF.
Millimeters
Min.
A
B
C
D
E
F
G
H
J
K
L
P
R
Typ.
4.4
1.45
14.35
0.5
2.7
15.8
20.4
15.1
5.4
3.4
4.08
1.20
Inches
Max.
Min.
4.6
1.55
15.60
0.7
2.9
16.5
21.1
15.5
5.65
3.65
4.17
1.40
0.173
0.057
0.565
0.020
0.106
0.622
0.815
0.594
0.213
0.134
0.161
0.047
4.60
Typ.
Max.
0.181
0.061
0.614
0.028
0.114
0.650
0.831
0.610
0.222
0.144
0.164
0.055
0.181
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2001 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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BTA40 and BTA/BTB41 Series

600 and 800

ABSOLUTE MAXIMUM RATINGS

Non repetitive surge peak on-state

I t Value for fusing

VDSM/VRSM Non repetitive surge peak off-state

Peak gate current

October 2001 - Ed: 4

BTA40 and BTA/BTB41 Series

VD = 67 % VDRM gate open Tj = 125C

(dV/dt)c (2) (dI/dt)c = 20 A/ms

Note 1: minimum IGT is guaranted at 5% of IGT max.

BTB: Non insulated TOP3 package

BTA40 and BTA/BTB41 Series

Note: xxx= voltage

Fig. 1: Maximum power dissipation versus RMS

Fig. 2: RMS on-state current versus case

BTA40 and BTA/BTB41 Series

Fig. 3: Relative variation of thermal impedance

Fig. 5: Surge peak on-state current versus

ITSM (A), It (As)

Fig. 7: Relative variation of gate trigger current,

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

Fig. 8: Relative variation of critical rate of decrease

IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25C]

Fig. 6: Non-repetitive surge peak on-state

BTA40 and BTA/BTB41 Series

Fig. 9: Relative variation of critical rate of

PACKAGE MECHANICAL DATA

BTA40 and BTA/BTB41 Series

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