Potential Induced Degradation of Photovoltaic Modules: Influence of Temperature and Surface Conductivity

By

Faraz Ebneali
April 2012

Overview
Goals Introduction to Photovoltaic Reliability Why PID?
PID Definition IEC standard

Parameters influencing PID

High Voltage in the String

Project Setup Characterization of samples and diagnostic tools Findings

Positive Bias Negative Bias Regeneration Bias

Conclusion and Recommendation

Goals
Study High voltage, Temperature and humidity (surface conductivity) effects on crystalline silicon modules (Poly -Si and Mono-Si) To compare the effect of temperature on reaction rate and degradation level To find out the correlation between leakage current and power reduction To compare and evaluate the rate of degradation among Fresh, Thermal Cycling (TC) and Damp Heat (DH) samples To understand what type of samples are suitable for PID test Level of Electrochemical Corrosion and shunting within the interface To analyze the power reversibility of the samples after degradation To estimate the internal series resistance (Rs) of the samples before and after PID stress test To verify and confirm previous PRL PID studies

Reliability in PV Industry
The first period : Eliminate by Qualification test The Second Period : Low failure rate The last Period : End of the useful life PID test : decreases early field failure rate and increases the normal life cycle

Why PID?
Oh no! Our modules are down 40%, we think it is potential induced degradation anonymous module manufacturer, 2010. [1] Australias silent module killer (due to high temperatures and humidity, specially in the north of the country)

But what conditions actually cause the effect to occur? Ideal conditions for PID; 1. 2. 3. High voltage (600 -1500 V) Temperature Surface Conductivity (Humidity)

PID free modules!

PID could jeopardize performance of the PV module. Degradation due to PID is nothing new but has been resurfaced in recent years; more sensitive modules , more system voltage
Lack of standard test

Q-Cells PID Test Conditions: 25C, damp module surface (what %RH?) 600 Volt (what polarity?) 300 hours test Tainergy PID Test Conditions: 25C, (what %RH?) -1000 Volt 140 hours test

IEC61215 standard
Current Standard ! Qualification tests like Thermal Cycling, Damp Heat and Require testing for safety issues at high voltage conditions.

Inclusion of PID in IEC standard Need to standardize the PID test that completely evaluate the durability of the modules under stressed conditions. Early detection of damage with applying both negative and positive potential and other conditions. Reasonable PID test in case of cost, time and stress level.

PID Definition
The potential difference between the frame and the cells results in a leakage current (charge transferred or polarization)
Polarization : Charge accumulate in the encapsulation! Shunting, FF, Short and open circuit

Flow of leakage current from active cell layer through the encapsulation and the glass along the surface to the frame [2]

Parameters influencing on PID effects

Cell Level
1. Anti reflective coating 2. Emitter depth 3. Type of base doping

Module Level
1. Encapsulant material 2. Module design (frame, mounting, isolation)

System Level
1. Voltage (1000V) 2. Humidity (85%RH) 3. Temperature (85 C) 4. Grounding connected with frame [3]

[4] 1.Transformerless Inverter (no transformer): Lighter, cheaper and higher efficiency 2.Transformer-based Inverter: PID effect can be prevented by grounding the negative string, however high potential may cause new failure mechanisms

High voltage in the string

10

Transformless Inverters
PV Offset box (SMA in cooperation with Evergreen) Operates at nigh (2 mA Max and 600 V) Still can not reverse the electrochemical degradations

[5]

11

Two main failure modes in PID

Electrochemical Reaction : Electricity can enable a non-spontaneous chemical
reaction to occur and create an electrolytic corrosion. Electrolysis;
Voltage Electrolyte solution (Water Vapor) Cell = anode Frame = cathode

Leading to degradation of the material such as silicon nitride (ARC), EVA and the active cell. encapsulation material via cell, causing polarization, not only lowering the parallel resistance but the FF and the output. This is associated with significant shunting of individual cells.

Polarization: Leakage current causes the charge to accumulate in the

[6] 12

Indoor test to simulate field condition

To simulate the open-air conditions (Field environment)
1. 2. 3. 4. Test Duration: 35 h Voltage: 600 V Chamber Temperature : 60C and 85 C Chamber Humidity : 85%

13

System Setup and Components

PV Samples

Grounding Point

DAS

Resistors

Power Supply

14

System Setup
PRL complete PID stress test package Precise Upgradable (2kV) Safe (Ground Fault Protection) Automated (2 round per day) Durability (18AWG)
7.5 kV Insulator

PID Channel Monitor

15

Process Flow
Goal Project 1 and 2: Share similar characteristics. To discover the effect of polarity on PV samples and study the temperature variation effect on the amount of Leakage current (LC) Project 3 and 4 : Monitor and analyze the effect of temperature

16

Procedure Description
I. Phase-I Positive Bias (Negatively grounded): +600V
Apply +600V to cell active layer 5h intervals at 85C or 60C and 85%RH (excluding 1 hour ramp rate) 35hours ( 7-PID cycles-Characterization after 2nd ,4th and 7th cycle )

II. Phase-II Negative Bias (Positively Grounded): 600V

Apply -600V to cell active layer 5hours at 85C or 60C and 85%RH (excluding 1 hour ramp rate)

Phase-III: Regeneration Process

+600V is applied to the active layer of Phase-II modules

17

Arrhenius behavior
Arrhenius plots are used to analyze the effect of temperature on the rates of chemical reactions

Project 1-Arrhenius plot, Cycle 7 (+ Bias, 35h) at 85C/85%RH

4.0

75C
3.5

45C
y = -8.2745x + 26.819

25C

Leakage current (A)

3.0 2.5

The rate of the aging can be approximated by using Arrhenius equation

DH
2.0

TC
1.5 y = -5.7052x + 18.735
1.0 0.5 y = -7.4607x + 23.991

Fresh

0.0 2.8 2.9 3.0 1000/T(K) 3.1 3.2 3.3

18

Arrhenius behavior
Project 1-Arrhenius plot, Cycle 7(-Bias, 35h) at 85 C/85%RH
4.0

75C
3.5

45C

25C

y = -7.3277x + 24.121 3.0

Leakage current (A)

2.5

DH
y = -7.2263x + 23.911 2.0

TC

1.5

Fresh

1.0

0.5 y = -7.6797x + 25.12 0.0

2.8

2.9

2.9

3.0

3.0

3.1

3.1

3.2

3.2

3.3

3.3

1000/T(K)

19

Arrhenius Plot
Project 3, Arrhenius plot- Cycle 2(+Bias, 10h) at 85 C/85%RH
4.0

75C
3.5

45C

25C

Leakage current (A)

3.0

2.5

DH
2.0

TC Fresh

1.5

1.0

0.5

0.0 2.8 2.9 3.0 3.1 3.2 3.3

1000/T(K)

20

Ea Summary
These (~.6 ev to.8 eV) correspond closely to the activation energy for current conduction through soda-lime silicate glasses. In the presence of high RH, the top surface becomes coated with a macroscopic layer of water, is fairly conductive, and behaves as an equipotential that approximates earth ground potential [2].

21

Phase-I Positive Bias (Negatively grounded): +600V

Total coulombs transferred vs. Fraction of power remaining in project
Project 1 (+Bias, 85C/85%RH)-Power Performance
1.1 1.4 Fraction of Power Remaining 1.0 1.2

0.9 No sign of degradation 0.8 0.7

1 0.8 0.6 0.4

0.6
0.5

0.2
0

Before

Round 2

Round 4 Test Hours

Round 7

Coulombs

DH-Coulombs

TC-Coulombs

Fresh-Coulombs

TC

DH

Fresh

22

Phase-I Positive Bias (Negatively grounded): +600V

Total coulombs transferred vs. Fraction of power remaining in project
Project 3 (+Bias, 85C/85%RH)-Power Performance

1.1
1.4

Fraction of Power Remaining

1.0 0.9 0.8 0.7

1.2 1 0.8 0.6 0.4

0.6 0.5

0.2 0

Before

Round 1

Round 4 Test Hours

Round 7

Coulombs

DH-Coulombs

TC-Coulombs

Fresh-Coulombs

TC

DH

Fresh

23

Phase-I Positive Bias (Negatively grounded): +600V

Total coulombs transferred vs. Fraction of power remaining in project
Project 3 (+Bias, 60C/85%RH)-Power Performance

1.1 1.4 Fraction of Power Remaining 1.0 0.9

0.8

1.2 1 0.8 0.6

0.7 0.4 0.6 0.5 Before Round 1 Round 4 Test Hours Round 7 Coulombs 0.2 0

DH-Coulombs

TC-Coulombs

Fresh-Coulombs

TC

DH

Fresh

24

Phase-II Negative Bias (Positively Grounded): 600V

Total coulombs transferred vs. Fraction of power remaining in project
Project 1 (-Bias, 85C/85%RH)-Power Degradation 1.1 Fraction of Power Remaining 1.0 0.9 0.8 0.7 0.6 0.5
Before Round 2 Round 4 Round 7 Coulombs

1.2 1 0.8 0.6 0.4 0.2 0 Test Hours

DH-Coulombs

TC-Coulombs

Fresh-Coulombs

TC

DH

Fresh

25

Phase-II Negative Bias (Positively Grounded): 600V

Total coulombs transferred vs. Fraction of power remaining in project
Project 2 (-Bias, 60C/85%RH)-Power Degradation 1.1 1.4 1.0
Fraction of Power Remaining 1.2

0.9
0.8 0.7 0.6 0.5 0.4

1.0 0.8 0.6 0.4 0.2

0.0

Before

Round 1

Round 4 Test Hours

Round 7

Coulombs

DH-Coulombs

TC-Coulombs

Fresh-Coulombs

TC

DH

Fresh

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Phase-II Negative Bias (Positively Grounded): 600V

Project 1 (DH, -Bias)-STC Power Comparison

Current

I-V curves at Standard Test Condition (STC) Power Performance Negative bias caused drop in power output Increase in PID stress test increase the power loss due to shunting and polarization effect Small changes in Voc but significant FF drop

6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 10 20

Vmp, Imp Dropped

Pre-Test 10h
20h 35h

Voltage 30

40

50

Project 1 (Fresh , -Bias)-STC Power Comparison

6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 10 20

Vmp, Imp Dropped

Pre-Test
10h 20h

Current

35h

Voltage

30

40

50

27

Phase-II Negative Bias (Positively Grounded): 600V

Due to ease of ionization of the Ag anode in positive bias the LC is greater than other conditions Ionic migration leading to a leakage current through the wet encapsulant medium [1]
Coulombs Transfered after 35 hours Test
3.5

3.0
2.5 +Bias, 85C -Bias, 85C +Bias, 60C -Bias, 60C

2.0
1.5

1.0
0.5

0.0
Coulombs transferred

28

Correlation of power and coulombs transferred in negatively biased projects

Fraction of Power Remaining vs. Coulombs Transferred, Project 1 ( -Bias, 85C)

1.00

1.20

Fraction of Power Remaining

0.80

1.00

0.80
0.60

0.60 0.40 0.40 0.20

0.20

0.00 DH Fresh TC

0.00

Fraction of Power Remaining

Total Coulombs Transferred

Coulombs Transferred

29

Correlation of power and coulombs transferred in negatively biased projects

Fraction of Power Remaining vs. Coulombs Transferred, Project 1 ( -Bias, 60C)

1.00

0.70 0.60

Fraction of Power Remaining

0.80 0.50
0.60 0.40

0.40

0.30
0.20

0.20

0.10
0.00 Fresh DH TC 0.00

Fraction of Power Remaining

Total Coulombs Transferred

Coulombs Transferred

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Phase-III: Regeneration Process

The positive ion migration mechanism causes surface polarization of the modules in negatively biased samples. This affect is reversible to some extent. There are two ways that the effected modules can be recovered ;
Heat Recovery Reverse Polarity
1.10

Project 1 (Regeneration, 85C/85%RH, +600 V)

Fraction of Power Remaining

1.00
0.90

TC
0.80
0.70

~100% gained original power

Fresh

0.60 0.50

Neg35h

Round 2 Test Hours

Round 4

DH Broke

31

Phase-III: Regeneration Process

Project 2, (Regeneration, 60 C/85%RH)
1.10

1.00 Fraction of power Remaning

0.90

DH 0.80
TC 0.70

Up to 98% Power recovery

Fresh

0.60 0.50 0.40 0.30 Before Neg-35 Round 2 Test Hours Rround 4 Round 7

32

Power Regeneration (STC)

Project 2, DH module (Regeneration, +Bias, 60C) STC Power Comparison
200
180

160 140

Pre-Test-P(W)
Neg 35h-P(W)

Current

120

Reg+5h-P(W) Reg+10h-P(W)
Reg+20h-P(W)

100 80
60

Back to Original Power

Reg+35h-P(W)

40 20
0

10

20

30

40

50

Voltage

33

Internal Series Resistance (Rs)

Project 1(+Bias, 85C/85%RH)-Series Resistance
2.00 1.80 1.60 1.40 1.20 1.00 0.80 0.60 0.40 0.20 0.00

Resistance ()

Pre and Post PID test Rs calculated using IEC 60891 standard

DH
TC Fresh

Pre-Rs (P1) Pre vs. Post Test *

Post-Rs (P1)

Pre-Rs (P2)

Post-Rs (P2)

Project 1(-Bias, 85C/85%RH)-Series Resistance

2.00

1.80 1.60

Resistance ()

1.40
1.20 1.00 DH TC

0.80 0.60 0.40

0.20 0.00

Fresh

*P1= Procedure 1 *P2= Procedure 2

Pre-Rs (P1) Pre vs. Post Test *

Post-Rs (P1)

Pre-Rs (P2)

Post-Rs (P2)

34

Internal Series Resistance

Project 1 (-Bias, 85C/85%RH)
1.10

Post-Test Rs

Pre-Test Rs
3.00 2.50

Fraction of Power Remaining

1.00

0.90 0.80
0.70 0.60

2.00 1.50
1.00 0.50

0.50

0.00

Before

Round 2

Rround 4

Round 7

Series Resistance ()

Test Hours Pre-Rs Post-Rs TC DH Fresh

35

Electroluminescence Image
Project 2, DH Module (Regeneration, +Bias)-Power Regeneration
1.10

Fraction of Power Remaining

1.00 0.90
0.80

0.70 0.60 0.50

0.40

Cell shunting

0.30 Before Neg-35 Reg+10 Test Hours Reg+20 Reg+35

36

No longer contributes to short circuit current production

Electroluminescence Image
1- Moisture penetration 2- Less resistive path to ground

37

Project 2 after 10 hours test (-bias, 85C/85%RH) 38

TC DH Fresh

Infrared Scan

Project 2 after 20 hours test (-bias, 85C/85%RH) 39

TC DH
Fresh

Infrared Scan

Project 2 after 35 hours test (-bias, 85C/85%RH) 40

TC DH Fresh

Infrared Scan

Infrared Scan Summary

1. Project 1 (-bias, 85C/85%RH) 2. Project 2 (-bias, 60C/85%RH) 3. Project 1 (+bias, 85C/85%RH) 3

41

Summary

Carbon paste

42

Summary

Carbon paste

43

Summary

Carbon paste

44

Summary of Findings
Positive Bias Positive potential bias does not seem to affect the performance, irrespective of pre-history (fresh, TC or DH) and surface conductivity (conductive carbon or humidity) of the modules. Negative Bias In the negative bias modules that were subjected to TC tests did not show power output deterioration when humidity (water film) was used for the surface conductivity; however, in the same projects DH and fresh modules lost up to 50% of their original power. Therefore degradation in negative bias depends on pre-history (fresh, TC or DH) and surface conductivity
Phase Transition of components and materials, cure EVA and back sheet That is in contrast to the previous study

Regeneration Bias Reverse polarity can recover modules power to approximately their original power EL Image Dead cells and shunting effects were observed in negative PID test samples IR Scan Majority of samples in both polarities have an elevated average operating module temperature after 35 hours of PID testing Damp Heat samples DH samples experienced more noticeable amounts of charge transfer than other samples (DH = 4.59, fresh =3.43 coulombs transferred) Correlation of Power loss and charge transferred in Negative Bias Larger amount of charge transferred, larger degradation and vice versa

45

Further investigation
Why thermal cycling samples of this study show resistance to the PID? (but not in previous study) Increase 35 hours stress test (7 cycles) to more cycles; it allows better auditing methods for any type of phase transition or new mechanisms in the cell and polymeric materials. Large sample size but from the same model System level study

46

Acknowledgements
Thankful to my advisor Dr. Govindasamy Tamizhmani for introducing me to the world of Photovoltaic industry and specifically reliability of photovoltaic. His encouragements and supports in various ways. And thanks to Joseph Kuitche for discussing valuable information with me in relevance to the study. I gratefully thank Dr. Narcio F. Macia and Dr. Bradely Rogers for their time and constructive comments on this paper. Thanks to Dr.Peter Hacke, NERL, for sharing his experiences regarding this study.

Regards and blessings to my parents, who without them it was impossible to make it to this point. Their kind and unconditional support in all aspects during the completion of my masters studies.

And to all my PRL students (current and previous) specially;

Sandyha Goranti Sai Tatapudi Kolapo Olakonu Meena Vemula Annie Jose Cano Saurabh Surya Narayana

End

References
[1] Peter Hacke Considerations for a Standardized Test for Potential Induced Degradation of Crystalline SiliconPV Modules February 29, 2012 NREL/PR-520054581 [2] J.A. del Cueto and S.R. Rummel Degradation of Photovoltaic Modules Under High Voltage Stress in the Field 2010 [3] Simon Koch Potential Induced Degradation (PID) effects on crystalline solar modules 2011 [4] Ivo Kastle Dealing with high voltage stress PV Magazin , 2011 [5] www.SMA.de PV OFFSET BOX Night -time discharging of PV panels SMA Solar Technology [6] P. B. Ghate Electromigration-induced failures in VLSI interconnects texas instruments incorporated, Thin Film Electromigration" Workshop, International Reliability Physics Symposium, March 30, 1982.