Porosimeter
Porosimeter
Porosimeter
Standard Features
Fast CCD Measurement Mode
Grating based double stage Detector: CCD array 1024 + dedicated detector for NIR Spectral range: from190 nm up to 1700 nm SE Optimized Spectrograph Resolution < 0.8 nm @ 633 nm
SOPRA offers the possibility on the same platform to combine High Resolution and Multi-Channel measurements mode allowing advanced materials characterization as well as fast routine measurement with automation capabilities. Whatever your needs, your system will follow your evolution. Our SE design is based on achromatic modulation by industry proven rotating optical elements and uses patented optical fibers connection of the Spectrometers/Spectrographs. GES5E has a robust and advanced design for stable, reproducible and high accuracy measurements. No need of daily calibration.
Automatic Microspot
Beam size down to 50 m
Achromatic Compensators fixed/scan Mueller Matrix 12 or 16 coef Polarized Photometry Scatterometry Automatic Generalized SE for Anisotropy
Mapping
EXTENDED/COMBINED METROLOGY
Liquid cells Heater stage Inert gas cell
(4.2 K-700 K) measurements up to 5 spectra/sec
Cryostat
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Softwares
GES5 E completely benefits from redesigned software interface, with deepest hardware control allowing user to manage and use every optical elements independently, or to customize new sequences to achieve a specific measurement like optical retardance and generalized ellipsometry. GES5 E also benefits from the most recent algorithms for fast convergence. Library of dispersion laws can be added without limitation and (n,k) database has more than 1000 entries.
Performance
Measuring time: sec (Fast CCD mode) 1 sec (High Resolution mode 120 Thickness range 0.01nm to 50m Measurement Precision: 0.01nm on 120nm ref sample Optical indexes with 10-3 precision
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Typical Applications
As a pioneer in the SE technology SOPRA provides the widest proprietary n & k database
Semiconductors
High-k: SiO2 , Si3N 4 , SiNx, SiON, HfO2, Ta 2O5 , ZrO2 ... Low-k: SiOC, SiOF, SOG, Polymers... Metals & interconnects: Al, Cu, Cr, Mo, W, Pt, TiN, TaN, WSix, AlCu Lithography: AR coatings, BARC, SiO xN y, Resists, Masks... Semiconductors & Epi-layers: SOI, SiGe, Strained Si, SiC, Poly-Si, a-Si, OPO, ONO, HSG, III-V: AsGa,InP,GaN, II-VI: CdTe, ZnSe...
N
Si cap thickness Native oxide Silicon SiGe (9%) Silicon SiGe tickness Ge% in SiGe layer
LTPS: poly-Si, crystallinity, H content in a-SiH, SiO2, ... Colour filters: RGB, Polymide, ITO, CrO 2, Cell Gap, LC... OLED: AlQ3, CuPc, doped organics layers, thin metals... STN: thin polymers, Polymides, ITO ...
WaveL(nm)
Photonics
Waveguides, coarse filters, Reflective Coatings, ARC III-V devices (EEL, VCSEL, ECL) MEMS, AlGaN, GaN Sol-Gel/Porous
General
Ferroelectric materials (BST, SBT, PZT) CD-RW (AgInSbTe, ZnS,, SiO 2) Magnetic Films (GMR, thin film heads) CNT/Nanodots/rods Fuel, SOFC, porous electrode
Organics
Photovoltaic, DSSC, ZnO, CIS Langmuir Blodgett films Bio-sensors Polymers dyes Porous materials
SOPRA Application Laboratory continuously supports its customers through sample characterization and data analysis assistance. SOPRA is following the procedures recommended by International Standards Organization applying a calibration process to every Reference Sample.
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SOPRA USA Tel.: +1 650 566 1270 - Fax: +1 650 566 1267 [email protected]
Non-contractual document. SOPRA may modify the products/specifications described in this document or any documents supplied with the product without prior notice
SiGe: Thickness mapping in CCD mode with Si Cap, SiGe thickness and Ge%