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    MTB20N20

    Uploaded by

    Mata Randall
    This document contains the SPICE model description for a MOSFET device (MTB20N20) developed by Motorola and Alliance Technologies. The model includes definitions for the device's internal parasitic resistances and capacitances. It also contains the level 3 BSIM model equations and parameters that describe the core MOSFET behavior. SPICE netlists for the model in different simulator formats (C, P, G) are provided.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as TXT, PDF, TXT or read online from Scribd

    MTB20N20

    Uploaded by

    Mata Randall
    66 views7 pages
    This document contains the SPICE model description for a MOSFET device (MTB20N20) developed by Motorola and Alliance Technologies. The model includes definitions for the device's internal parasitic resistances and capacitances. It also contains the level 3 BSIM model equations and parameters that describe the core MOSFET behavior. SPICE netlists for the model in different simulator formats (C, P, G) are provided.

    Original Description:

    Manuales de Servicio

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    © Attribution Non-Commercial (BY-NC)

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    This document contains the SPICE model description for a MOSFET device (MTB20N20) developed by Motorola and Alliance Technologies. The model includes definitions for the device's internal parasitic resistances and capacitances. It also contains the level 3 BSIM model equations and parameters that describe the core MOSFET behavior. SPICE netlists for the model in different simulator formats (C, P, G) are provided.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as TXT, PDF, TXT or read online from Scribd
    Download as txt, pdf, or txt
    66 views7 pages

    MTB20N20

    Uploaded by

    Mata Randall
    This document contains the SPICE model description for a MOSFET device (MTB20N20) developed by Motorola and Alliance Technologies. The model includes definitions for the device's internal parasitic resistances and capacitances. It also contains the level 3 BSIM model equations and parameters that describe the core MOSFET behavior. SPICE netlists for the model in different simulator formats (C, P, G) are provided.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as TXT, PDF, TXT or read online from Scribd
    Download as txt, pdf, or txt
    of 7

    ********************************************************************************

    ************
    *
    *
    *
    #################################################
    *
    *
    #
    #
    *
    *
    #
    MTB20N20E BY MOTOROLA
    #
    *
    *
    #
    #
    *
    *
    #
    MODEL DEVELOPED BY
    #
    *
    *
    #
    ALLIANCE TECHNOLOGIES
    #
    *
    *
    #
    10510 RESEARCH RD SE
    #
    *
    *
    #
    ALBUQUERQUE NM 87123
    #
    *
    *
    #
    (505) 299-9591
    #
    *
    *
    #
    11-25-92 J. DULIERE
    #
    *
    *
    #
    #
    *
    *
    #################################################
    *
    *
    *
    ********************************************************************************
    ************
    *
    * THE MODEL FOR THIS DEVICE IS A SUBCIRCUIT AND CAN BE USED IN THE FOLLOWING FOR
    MAT
    * IN ANY CIRCUIT SIMULATION:
    * X<name> Nodes<N1, N2, N3> Model_Name
    * where X<name> is the circuit specific name
    * Nodes are 3 for this device, the first is the drain, the second is the gate, a
    nd the third
    * is the source.
    * Model_Name is MTB20N20X WHERE 'X' IS EITHER C, P, OR G FOR SPICE 3C.1 - 3E.
    2, PSPICE,
    * AND SPICE 2G.6 RESPECTIVELY
    * Example: X1 10 20 30 MTB20N20C IS USED WITH SPICE 3C.1 COMPATIBALE SIMULATORS
    *
    .SUBCKT MTB20N20C
    10 20 30
    *
    | | |
    *
    | | SOURCE
    *
    | GATE
    *
    DRAIN
    ********************************************************************************
    ************
    *
    *
    *------------------------------ EXTERNAL PARASITICS OF DEVICE ----------------------------*
    RD1
    2
    4
    54.25E-03 RD
    RD2
    4
    5
    54.25E-03 RD

    RS
    3
    9
    45.20E-03 RS
    RG
    1
    8
    7.25
    LD
    5
    10
    3.5E-9
    LG
    8
    20
    7.5E-9
    LS
    9
    30
    7.5E-9
    ********************************************************************************
    ************
    *---------------------------- END EXTERNAL PARASITICS OF DEVICE --------------------------*
    ********************************************************************************
    ************
    ********************************************************************************
    ************
    *
    *
    *--------------------- DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT --------------------*
    DDS
    9
    11
    DDS1
    RDIO
    11
    5
    9.1E-03 RDIO
    *-------------------- END DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT -----------------*
    *
    *
    ********************************************************************************
    ************
    ********************************************************************************
    ************
    *
    *
    *---------------------------- DRAIN GATE CAPACITANCE SIMULATOR ---------------------------*
    *-------------------- FIRST SECTION FOR NON-LINEAR CGD INCLUDES FOLLOWING ----------------*
    ********************************************************************************
    ************
    *
    VOLTAGE CONTROLLED SWITCHES CAN BE USED IN PLACE OF M2 AND M3 IN THE EVENT
    *
    *
    THE SIMULATOR SUPPORTS VOLTAGE CONTROLLED SWITCHES. USE OF VOLTAGE CONTRO
    LLED
    *
    *
    SWITCHES WILL REDUCE EXECUTION TIME FOR THIS MODEL
    *
    ********************************************************************************
    ************
    *
    DGD
    6
    4
    DGD
    RDGD
    4
    6
    1E10
    M2
    6
    4
    1
    100
    MSW1
    RSUB1 1
    100
    1E12
    *----------------------------- LAST SECTION FOR CONSTANT CGD ----------------------------*
    CGDMAX 4
    7
    1.82E-9
    RCGD
    4
    7
    1E10
    M3
    7
    4
    1
    101
    MSW2
    RSUB2 1
    101
    1E12
    *---------------------------- END GATE CAPACITANCE SIMULATOR -----------------------------*
    *
    *
    ********************************************************************************

    ************
    ********************************************************************************
    ************
    *
    *
    *--------------------------- LEVEL 3 MOS MODEL CORE OF SUBCKT ----------------------------*
    M1
    2
    1
    3
    9
    MAIN
    W=5.36 L=1E-6
    *------------------------------ END LEVEL THREE MOS MODEL --------------------------------*
    *
    *
    ********************************************************************************
    ************
    *------------------------------ PARAMETER SETS FOR MODELS --------------------------------*
    .MODEL MSW1
    NMOS
    (LEVEL = 1
    VTO = 0
    KP
    = 1
    )
    .MODEL MSW2
    PMOS
    (LEVEL = 1
    VTO = 0
    KP
    = 1
    )
    .MODEL MAIN
    NMOS
    (LEVEL = 3
    TOX
    = 1E-7
    + NSUB = 1.85E15
    VTO
    = 4.472
    PHI
    = 0.6
    + UO
    = 690.9843806
    KAPPA = 7.131283E-4
    THETA = 6.680866E-3
    + NFS
    = 2.5E12
    )
    .MODEL DDS1 D
    (
    IS
    = 3.908008E-12
    + N
    = 1.012433
    BV
    = 200
    IBV
    = 2.5E-4
    + EG
    = 1.11
    XTI
    = 3.497
    TT
    = 753E-9
    + CJO
    + FC
    .MODEL
    + VJ
    .MODEL
    .MODEL
    .MODEL

    = 1.662516E-9
    = 0.5
    )
    DGD
    D
    = 0.217
    )
    RD
    R
    )
    RS
    R
    )
    RDIO R
    )

    VJ

    = 0.7407019

    = 0.4736603

    = 0.692

    CJO
    FC

    = 1.70e-9
    = 0.5

    ( TC1

    = 7.6984E-4

    TC2

    = 5.43994E-6

    ( TC1

    = 9.64295E-3

    TC2

    = 2.3704E-5

    ( TC1

    = 2.06379E-3

    TC2

    = 6.53716E-7

    .ENDS
    ********************************************************************************
    ************
    ********************************************************************************
    ************
    .SUBCKT MTB20N20P
    10 20 30
    *
    | | |
    *
    | | SOURCE
    *
    | GATE
    *
    DRAIN
    ********************************************************************************
    ************
    *
    *
    *------------------------------ EXTERNAL PARASITICS OF DEVICE ----------------------------*
    RD1
    2
    4
    RD
    54.25E-03
    RD2
    4
    5
    RD
    54.25E-03
    RS
    3
    9
    RS
    45.20E-03

    RG
    1
    8
    7.25
    LD
    5
    10
    3.5E-9
    LG
    8
    20
    7.5E-9
    LS
    9
    30
    7.5E-9
    ********************************************************************************
    ************
    *---------------------------- END EXTERNAL PARASITICS OF DEVICE --------------------------*
    ********************************************************************************
    ************
    ********************************************************************************
    ************
    *
    *
    *--------------------- DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT --------------------*
    DDS
    9
    11
    DDS1
    RDIO
    11
    5
    RDIO
    9.1E-03
    *-------------------- END DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT -----------------*
    *
    *
    ********************************************************************************
    ************
    ********************************************************************************
    ************
    *
    *
    *---------------------------- DRAIN GATE CAPACITANCE SIMULATOR ---------------------------*
    *-------------------- FIRST SECTION FOR NON-LINEAR CGD INCLUDES FOLLOWING ----------------*
    ********************************************************************************
    ************
    *
    VOLTAGE CONTROLLED SWITCHES CAN BE USED IN PLACE OF M2 AND M3 IN THE EVENT
    *
    *
    THE SIMULATOR SUPPORTS VOLTAGE CONTROLLED SWITCHES. USE OF VOLTAGE CONTRO
    LLED
    *
    *
    SWITCHES WILL REDUCE EXECUTION TIME FOR THIS MODEL
    *
    ********************************************************************************
    ************
    *
    DGD
    6
    4
    DGD
    RDGD
    4
    6
    1E10
    M2
    6
    4
    1
    100
    MSW1
    RSUB1 1
    100
    1E12
    *----------------------------- LAST SECTION FOR CONSTANT CGD ----------------------------*
    CGDMAX 4
    7
    1.82E-9
    RCGD
    4
    7
    1E10
    M3
    7
    4
    1
    101
    MSW2
    RSUB2 1
    101
    1E12
    *---------------------------- END GATE CAPACITANCE SIMULATOR -----------------------------*
    *
    *
    ********************************************************************************
    ************

    ********************************************************************************
    ************
    *
    *
    *--------------------------- LEVEL 3 MOS MODEL CORE OF SUBCKT ----------------------------*
    M1
    2
    1
    3
    9
    MAIN
    W=5.36 L=1E-6
    *------------------------------ END LEVEL THREE MOS MODEL --------------------------------*
    *
    *
    ********************************************************************************
    ************
    *------------------------------ PARAMETER SETS FOR MODELS --------------------------------*
    .MODEL MSW1
    NMOS
    (LEVEL = 1
    VTO = 0
    KP
    = 1
    )
    .MODEL MSW2
    PMOS
    (LEVEL = 1
    VTO = 0
    KP
    = 1
    )
    .MODEL MAIN
    NMOS
    (LEVEL = 3
    TOX
    = 1E-7
    + NSUB = 1.85E15
    VTO
    = 4.472
    PHI
    = 0.6
    + UO
    = 690.9843806
    KAPPA = 7.131283E-4
    THETA = 6.680866E-3
    + NFS
    = 2.5E12
    )
    .MODEL DDS1 D
    (
    IS
    = 3.908008E-12
    + N
    = 1.012433
    BV
    = 200
    IBV
    = 2.5E-4
    + EG
    = 1.11
    XTI
    = 3.497
    TT
    = 753E-9
    + CJO
    + FC
    .MODEL
    + VJ
    .MODEL
    .MODEL
    .MODEL

    = 1.662516E-9
    = 0.5
    )
    DGD
    D
    = 0.217
    )
    RD
    RES
    )
    RS
    RES
    )
    RDIO RES
    )

    VJ

    = 0.7407019

    = 0.4736603

    = 0.692

    CJO
    FC

    = 1.70e-9
    = 0.5

    ( TC1

    = 7.6984E-4

    TC2

    = 5.43994E-6

    ( TC1

    = 9.64295E-3

    TC2

    = 2.3704E-5

    ( TC1

    = 2.06379E-3

    TC2

    = 6.53716E-7

    .ENDS
    ********************************************************************************
    ************
    ********************************************************************************
    ************
    .SUBCKT MTB20N20G
    10 20 30
    *
    | | |
    *
    | | SOURCE
    *
    | GATE
    *
    DRAIN
    ********************************************************************************
    ************
    *
    *
    *------------------------------ EXTERNAL PARASITICS OF DEVICE ----------------------------*
    RD1
    2
    4
    54.25E-03 TC=7.6984E-4,5.43994E-6
    RD2
    4
    5
    54.25E-03 TC=7.6984E-4,5.43994E-6
    RS
    3
    9
    45.20E-03 TC=9.64295E-3,2.3704E-5
    RG
    1
    8
    7.25

    LD
    5
    10
    3.5E-9
    LG
    8
    20
    7.5E-9
    LS
    9
    30
    7.5E-9
    ********************************************************************************
    ************
    *---------------------------- END EXTERNAL PARASITICS OF DEVICE --------------------------*
    ********************************************************************************
    ************
    ********************************************************************************
    ************
    *
    *
    *--------------------- DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT --------------------*
    DDS
    9
    11
    DDS1
    RDIO
    11
    5
    9.1E-03
    TC=2.06379E-3,6.53716E-7
    *-------------------- END DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT -----------------*
    *
    *
    ********************************************************************************
    ************
    ********************************************************************************
    ************
    *
    *
    *---------------------------- DRAIN GATE CAPACITANCE SIMULATOR ---------------------------*
    *-------------------- FIRST SECTION FOR NON-LINEAR CGD INCLUDES FOLLOWING ----------------*
    ********************************************************************************
    ************
    *
    VOLTAGE CONTROLLED SWITCHES CAN BE USED IN PLACE OF M2 AND M3 IN THE EVENT
    *
    *
    THE SIMULATOR SUPPORTS VOLTAGE CONTROLLED SWITCHES. USE OF VOLTAGE CONTRO
    LLED
    *
    *
    SWITCHES WILL REDUCE EXECUTION TIME FOR THIS MODEL
    *
    ********************************************************************************
    ************
    *
    DGD
    6
    4
    DGD
    RDGD
    4
    6
    1E10
    M2
    6
    4
    1
    100
    MSW1
    RSUB1 1
    100
    1E12
    *----------------------------- LAST SECTION FOR CONSTANT CGD ----------------------------*
    CGDMAX 4
    7
    1.82E-9
    RCGD
    4
    7
    1E10
    M3
    7
    4
    1
    101
    MSW2
    RSUB2 1
    101
    1E12
    *---------------------------- END GATE CAPACITANCE SIMULATOR -----------------------------*
    *
    *
    ********************************************************************************
    ************
    ********************************************************************************

    ************
    *
    *
    *--------------------------- LEVEL 3 MOS MODEL CORE OF SUBCKT ----------------------------*
    M1
    2
    1
    3
    9
    MAIN
    W=5.36 L=1E-6
    *------------------------------ END LEVEL THREE MOS MODEL --------------------------------*
    *
    *
    ********************************************************************************
    ************
    *------------------------------ PARAMETER SETS FOR MODELS --------------------------------*
    .MODEL MSW1
    NMOS
    (LEVEL = 1
    VTO = 0
    KP
    = 1
    )
    .MODEL MSW2
    PMOS
    (LEVEL = 1
    VTO = 0
    KP
    = 1
    )
    .MODEL MAIN
    NMOS
    (LEVEL = 3
    TOX
    = 1E-7
    + NSUB = 1.85E15
    VTO
    = 4.472
    PHI
    = 0.6
    + UO
    = 690.9843806
    KAPPA = 7.131283E-4
    THETA = 6.680866E-3
    + NFS
    = 2.5E12
    )
    .MODEL DDS1 D
    (
    IS
    = 3.908008E-12
    + N
    = 1.012433
    BV
    = 200
    IBV
    = 2.5E-4
    + EG
    = 1.11
    XTI
    = 3.497
    TT
    = 753E-9
    + CJO
    + FC
    .MODEL
    + VJ
    .ENDS
    _

    = 1.662516E-9
    = 0.5
    )
    DGD
    D
    = 0.217
    )

    VJ

    = 0.7407019

    = 0.4736603

    = 0.692

    CJO
    FC

    = 1.70e-9
    = 0.5

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