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    Optoelectronics: X X VM-R, X

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    Nurul Fahmi Arief
    1) The absorption spectrum of a GaAs quantum well 10nm thick showed a resonance peak due to exciton absorption. 2) When an electric field is applied perpendicularly to the quantum well layers, the exciton resonance remains but with reduced amplitude. 3) There is a shift in the position of the exciton resonance when an electric field is applied, due to the electrostatic energy of the exciton in the electric field, known as the quantum confined Stark effect.

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    Optoelectronics: X X VM-R, X

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    Nurul Fahmi Arief
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    1) The absorption spectrum of a GaAs quantum well 10nm thick showed a resonance peak due to exciton absorption. 2) When an electric field is applied perpendicularly to the quantum well layers, the exciton resonance remains but with reduced amplitude. 3) There is a shift in the position of the exciton resonance when an electric field is applied, due to the electrostatic energy of the exciton in the electric field, known as the quantum confined Stark effect.

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    1) The absorption spectrum of a GaAs quantum well 10nm thick showed a resonance peak due to exciton absorption. 2) When an electric field is applied perpendicularly to the quantum well layers, the exciton resonance remains but with reduced amplitude. 3) There is a shift in the position of the exciton resonance when an electric field is applied, due to the electrostatic energy of the exciton in the electric field, known as the quantum confined Stark effect.

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    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    9 views1 page

    Optoelectronics: X X VM-R, X

    Uploaded by

    Nurul Fahmi Arief
    1) The absorption spectrum of a GaAs quantum well 10nm thick showed a resonance peak due to exciton absorption. 2) When an electric field is applied perpendicularly to the quantum well layers, the exciton resonance remains but with reduced amplitude. 3) There is a shift in the position of the exciton resonance when an electric field is applied, due to the electrostatic energy of the exciton in the electric field, known as the quantum confined Stark effect.

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    Download as PDF, TXT or read online from Scribd
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    of 1

    ',,

    356

    Optoelectronics

    20

    tr
    O

    ro

    Ftg.13.26
    Measured absorption spectrum of a

    GaAs quantum well of l0nm


    thickness.

    L54

    1.62

    Photon energy (eV)

    Fig.13.27
    Measured absorption spectrum of
    a

    quantum well for electric field applied perpendicularly to the layers, (i)

    (iii)

    x lOaVm-r.(ii) l05vm-r, 1.4 x 105 vm-r, (iv) 1.8x l05 vm-1, ft) 2.2 x 105 vm-l.
    1.6

    hold; the chances of being able to ionize the exciton with the aid of the electric field must be high. However, when the electric field is applied perpendicular to the layers, then the good intentions of the electric field in trying to separate the particles are frustrated by the presence of the walls. Provided the well is narrow enough, the exciton is not field-ionized. Thus, the exciton resonance is still there albeit with reduced amplitude due to the increased separarion of the electron-hole pair. There is also a shift in the position ofthe resonance due to the electrostatic energy (this is nothing else but the energy of a dipole in an electric field, something we have discussed before). The expectations based on the above qualitative argument are borne out by the experimental observations, as shown in Fig. 13.27, where the absorption spectrum measured for a GaAs-AlGaAs quantum well structure is plotted against photon energy. This phenomenon is known as the euantum Confined Stark Effect. The excitons are obviously quantum confined, and the Stark

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