BTB08-600BW3G, BTB08-800BW3G Triacs: Silicon Bidirectional Thyristors

BTB08-600BW3G,
BTB08-800BW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance fullwave ac control applications
where high noise immunity and high commutating di/dt are required.
http://onsemi.com
Features
Blocking Voltage to 800 V

OnState Current Rating of 8 Amperes RMS at 25C
Uniform Gate Trigger Currents in Three Quadrants
High Immunity to dV/dt - 2000 V/ms minimum at 125C
Minimizes Snubber Networks for Protection
Industry Standard TO220AB Package
High Commutating dI/dt - 4 A/ms minimum at 125C
These are Pb-Free Devices
TRIACS
8 AMPERES RMS
600 thru 800 VOLTS
MT2
MT1
G
MARKING
DIAGRAM
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)

Rating
Symbol
Peak Repetitive Off-State Voltage (Note 1)

(TJ = -40 to 125C, Sine Wave,
50 to 60 Hz, Gate Open)
BTB08-600BW3G
BTB08-800BW3G
VDRM,
VRRM
OnState RMS Current

(Full Cycle Sine Wave, 60 Hz, TC = 80C)
IT(RMS)
8.0
ITSM
90
I2t
36
A2sec
VDSM/
VRSM
VDSM/VRSM
+100
Peak Gate Current (TJ = 125C, t = 20ms)
IGM
4.0
Peak Gate Power

(Pulse Width 1.0 ms, TC = 80C)
PGM
20
Average Gate Power (TJ = 125C)
PG(AV)
1.0
Operating Junction Temperature Range
TJ
Storage Temperature Range
Tstg
Peak NonRepetitive Surge Current

(One Full Cycle Sine Wave, 60 Hz,
TC = 25C)
Circuit Fusing Consideration (t = 10 ms)
Non-Repetitive Surge Peak Off-State
Voltage (TJ = 25C, t = 10ms)
Value
Unit
V
600
800
BTB08-xBWG
AYWW
TO-220AB
CASE 221A
STYLE 4
x
A
Y
WW
G
= 6 or 8
= Assembly Location
= Year
= Work Week
= Pb-Free Package
PIN ASSIGNMENT
1
Main Terminal 1
Main Terminal 2
Gate
-40 to +125
Main Terminal 2
-40 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
ORDERING INFORMATION
Device
Package
Shipping
BTB08-600BW3G
TO-220AB
(Pb-Free)
50 Units / Rail
BTB08-800BW3G
TO-220AB
(Pb-Free)
50 Units / Rail
*For additional information on our Pb-Free strategy and

soldering details, please download the ON Semicon
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2008
February, 2008 - Rev. 1
Publication Order Number:

BTB08-600BW3/D
BTB08-600BW3G, BTB08-800BW3G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction-to-Case
Junction-to-Ambient
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 seconds
Symbol
Value
Unit
RqJC
RqJA
2.5
60
C/W
TL
260
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
0.005
1.0
1.55
2.5
2.5
2.5
50
50
50
50
70
90
70
0.5
0.5
0.5
1.7
1.1
1.1
0.2
0.2
0.2
(dI/dt)c
4.0
A/ms
Critical Rate of Rise of On-State Current

(TJ = 125C, f = 120 Hz, IG = 2 x IGT, tr 100 ns)
dI/dt
50
A/ms
Critical Rate of Rise of OffState Voltage

(VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125C)
dV/dt
2000
V/ms
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25C
TJ = 125C
IDRM/
IRRM
mA
ON CHARACTERISTICS
Peak OnState Voltage (Note 2)
(ITM = 11 A Peak)
VTM
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 W)

MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
IGT
Holding Current
(VD = 12 V, Gate Open, Initiating Current = 100 mA)
IH
Latching Current (VD = 24 V, IG = 60 mA)

MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
IL
Gate Trigger Voltage (VD = 12 V, RL = 30 W)

MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
VGT
Gate Non-Trigger Voltage (TJ = 125C)

MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
VGD
V
mA
mA
mA
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current, See Figure 10.
(Gate Open, TJ = 125C, No Snubber)
2. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
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2
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Symbol
Parameter
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
VTM
Maximum On State Voltage
IH
Holding Current
VTM
on state
IH
IRRM at VRRM
off state
IH
Quadrant 3
MainTerminal 2 -
VTM
Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
Quadrant II
(+) MT2
Quadrant I
(+) IGT
GATE
(-) IGT
GATE
MT1
MT1
REF
REF
IGT -
+ IGT
(-) MT2
Quadrant III
Quadrant 1
MainTerminal 2 +
(-) MT2
Quadrant IV
(+) IGT
GATE
(-) IGT
GATE
MT1
MT1
REF
REF
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.

With in-phase signals (using standard AC lines) quadrants I and III are used.
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3
+ Voltage
IDRM at VDRM
125
12
PAV, AVERAGE POWER (WATTS)
TC, CASE TEMPERATURE (C)
DC
120
= 120, 90, 60, 30
115
= 180
110
DC
105
100
3
4
5
6
IT(RMS), RMS ONSTATE CURRENT (AMP)
10
180
8
6
60
4
90
= 30
2
0
120
100
MAXIMUM @ TJ = 125C
10
0.1
0.01
0.1
10
100
t, TIME (ms)
1104
1000
Figure 4. Thermal Response
50
45
MAXIMUM @ TJ = 25C
1
IH, HOLD CURRENT (mA)
I T, INSTANTANEOUS ONSTATE CURRENT (AMP)
TYPICAL AT
TJ = 25C
2
3
4
5
6
IT(RMS), ONSTATE CURRENT (AMP)
Figure 2. OnState Power Dissipation

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
Figure 1. RMS Current Derating
40
35
MTI2 Positive
30
25
20
MTI2 Negative
15
10
5
-40 -25 -10 5

0.1
0.5
1
1.5
2
2.5
3
3.5
VT, INSTANTANEOUS ONSTATE VOLTAGE (VOLTS)
20
35
50
65
80
95
110 125
4
TJ, JUNCTION TEMPERATURE (C)
Figure 5. Typical Hold Current Variation

Figure 3. OnState Characteristics
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4
Q3
Q1
10
Q2
VGT, GATE TRIGGER VOLTAGE (V)
2
VD = 12 V
RL = 30 W
-40 -25 -10 5
20
35
50
65
80
95
VD = 12 V
RL = 30 W
1.8
1.6
Q1
1.4
1.2
1
Q3
0.8
Q2
0.6
0.4
-40 -25 -10 5
1
110 125
20
35
50
65
80
95
110 125
Figure 6. Typical Gate Trigger Current Variation
dv/dt , CRITICAL RATE OF RISE OF OFFSTATE VOLTAGE (V/ m s)
Figure 7. Typical Gate Trigger Voltage Variation
5000
VD = 800 Vpk
TJ = 125C
4K
3K
2K
1K
10
100
1000
RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
10000
Figure 8. Critical Rate of Rise of OffState Voltage

(Exponential Waveform)
LL
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
CHARGE
1N4007
MEASURE
I
TRIGGER
CHARGE
CONTROL
NONPOLAR
CL
TRIGGER CONTROL
IGT, GATE TRIGGER VOLTAGE (mA)
100
200 V
MT2
1N914 51 W
MT1
G
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.
Figure 9. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c
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5
PACKAGE DIMENSIONS
TO-220
CASE 221A-07
ISSUE AA
-TB
SEATING
PLANE
C
S
A
U
1 2 3
H
K
Z
R
L
V
G
D
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.014
0.022
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 4:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.36
0.55
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including Typicals must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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BTB08-600BW3/D

BTB08-600BW3G, BTB08-800BW3G Triacs: Silicon Bidirectional Thyristors

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BTB08-600BW3G,

Blocking Voltage to 800 V

MAXIMUM RATINGS (TJ = 25C unless otherwise noted)

Peak Repetitive Off-State Voltage (Note 1)

OnState RMS Current

Peak Gate Current (TJ = 125C, t = 20ms)

Peak Gate Power

Average Gate Power (TJ = 125C)

Operating Junction Temperature Range

Storage Temperature Range

Peak NonRepetitive Surge Current

Stresses exceeding Maximum Ratings may damage the device. Maximum

*For additional information on our Pb-Free strategy and

Semiconductor Components Industries, LLC, 2008

February, 2008 - Rev. 1

Publication Order Number:

Critical Rate of Rise of On-State Current

Critical Rate of Rise of OffState Voltage

Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 W)

Latching Current (VD = 24 V, IG = 60 mA)

Gate Trigger Voltage (VD = 12 V, RL = 30 W)

Gate Non-Trigger Voltage (TJ = 125C)

Peak Repetitive Forward Off State Voltage

Peak Forward Blocking Current

Peak Repetitive Reverse Off State Voltage

Peak Reverse Blocking Current

Maximum On State Voltage

Quadrant Definitions for a Triac

All polarities are referenced to MT1.

TC, CASE TEMPERATURE (C)

Figure 4. Thermal Response

IH, HOLD CURRENT (mA)

I T, INSTANTANEOUS ONSTATE CURRENT (AMP)

Figure 2. OnState Power Dissipation

Figure 1. RMS Current Derating

-40 -25 -10 5

Figure 5. Typical Hold Current Variation

VGT, GATE TRIGGER VOLTAGE (V)

-40 -25 -10 5

TJ, JUNCTION TEMPERATURE (C)

TJ, JUNCTION TEMPERATURE (C)

Figure 6. Typical Gate Trigger Current Variation

dv/dt , CRITICAL RATE OF RISE OF OFFSTATE VOLTAGE (V/ m s)

Figure 7. Typical Gate Trigger Voltage Variation

Figure 8. Critical Rate of Rise of OffState Voltage

IGT, GATE TRIGGER VOLTAGE (mA)

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800-282-9855 Toll Free

ON Semiconductor Website: www.onsemi.com

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